Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19
Authors:
R. P. Beardsley,
D. E. Parkes,
J. Zemen,
S. Bowe,
K. W. Edmonds,
C. Reardon,
F. Maccherozzi,
I. Isakov,
P. A. Warburton,
R. P. Campion,
B. L. Gallagher,
S. A. Cavill,
A. W. Rushforth
Abstract:
We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystalline and shape induced anisotropies to play a crucial role in stabilising a flux-closing domain pattern. We…
▽ More
We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystalline and shape induced anisotropies to play a crucial role in stabilising a flux-closing domain pattern. We use magnetic imaging, micromagnetic calculations and linear elastic modelling to investigate a region close to the edges of an etched structure. This highly-strained edge region has a significant influence on the magnetic domain configuration due to an induced magnetic anisotropy resulting from the inverse magnetostriction effect. We investigate the competition between the strain-induced and shape-induced anisotropy energies, and the resultant stable domain configurations, as the width of the bar is reduced to the nanoscale range. Understanding this behaviour will be important when designing hybrid magneto-electric spintronic devices based on highly magnetostrictive materials.
△ Less
Submitted 10 February, 2017; v1 submitted 9 September, 2016;
originally announced September 2016.
Imaging current-induced switching of antiferromagnetic domains in CuMnAs
Authors:
M. J. Grzybowski,
P. Wadley,
K. W. Edmonds,
R. Beardsley,
V. Hills,
R. P. Campion,
B. L. Gallagher,
J. S. Chauhan,
V. Novak,
T. Jungwirth,
F. Maccherozzi,
S. S. Dhesi
Abstract:
The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic and applied spintronics research. Using x-ray magnetic linear dichroism microscopy, we show here that staggered effective fields generated by electrical current…
▽ More
The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic and applied spintronics research. Using x-ray magnetic linear dichroism microscopy, we show here that staggered effective fields generated by electrical current can induce reproducible and reversible modification of the antiferromagnetic domain structure in microdevices fabricated from a tetragonal CuMnAs thin film. The current-induced domain switching is inhomogeneous at the submicron level. A clear correlation between the average domain orientation and the anisotropy of the electrical resistance is demonstrated.
△ Less
Submitted 1 February, 2017; v1 submitted 28 July, 2016;
originally announced July 2016.
