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Gate-controlled skyrmion and domain wall chirality
Authors:
Charles-Elie Fillion,
Johanna Fischer,
Raj Kumar,
Aymen Fassatoui,
Stefania Pizzini,
Laurent Ranno,
Djoudi Ourdani,
Mohamed Belmeguenai,
Yves Roussigné,
Salim-Mourad Chérif,
Stéphane Auffret,
Isabelle Joumard,
Olivier Boulle,
Gilles Gaudin,
Liliana Buda-Prejbeanu,
Claire Baraduc,
Hélène Béa
Abstract:
Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key…
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Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key parameter. We probe the chirality of skyrmions and chiral domain walls by observing the direction of their current-induced motion and show that a gate voltage can reverse it. This local and dynamical reversal of the chirality is due to a sign inversion of the interfacial Dzyaloshinskii-Moriya interaction that we attribute to ionic migration of oxygen under gate voltage. Micromagnetic simulations show that the chirality reversal is a continuous transformation, in which the skyrmion is conserved. This control of chirality with 2 - 3 V gate voltage can be used for skyrmion-based logic devices, yielding new functionalities.
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Submitted 7 September, 2022; v1 submitted 8 April, 2022;
originally announced April 2022.
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Kinetics of ion migration in the electric field-driven manipulation of magnetic anisotropy of Pt/Co/oxide multilayers
Authors:
A. Fassatoui,
L. Ranno,
J. Peña Garcia,
C. Balan,
J. Vogel,
H. Béa,
S. Pizzini
Abstract:
Magneto-ionics, by which the magnetic properties of a thin layer can be modified through the migration of ions within a liquid or solid electrolyte, is a fast develo** research field. This is mainly due to the perspective of energy efficient magnetic devices, in which the magnetization direction is controlled not by a magnetic field or an electrical current, as done in traditional devices, but b…
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Magneto-ionics, by which the magnetic properties of a thin layer can be modified through the migration of ions within a liquid or solid electrolyte, is a fast develo** research field. This is mainly due to the perspective of energy efficient magnetic devices, in which the magnetization direction is controlled not by a magnetic field or an electrical current, as done in traditional devices, but by an electric field, leading to a considerable reduction of energy consumption.
In this work, the interfacial perpendicular magnetic anisotropy (PMA) of a series of Pt/Co/oxide trilayers covered by a ZrO$_2$ layer, acting as a ionic conductor, was finely tuned by a gate voltage at room temperature. The non-volatility and the time evolution of the effect point at oxygen ion migration across the ZrO$_2$ layer as the driving mechanism. A large variation of the PMA is obtained by modifying the degree of oxidation of the cobalt layer with the flux of oxygen ions: the easy magnetization axis can be switched reversibly from in-plane, with an under-oxidized Co, to in-plane, with an over-oxidized Co, passing through an out-of-plane magnetization with maximum PMA. The switching time between the different magnetic states is limited by the oxygen ion drift velocity through the multilayer structure. This was shown to depend exponentially on the applied bias voltage, and could be varied by over 5 orders of magnitude, from several minutes to a few ms. On the other hand, for a fixed gate-voltage, the oxidation of the cobalt layer decreases exponentially as a function of time. This behavior is in agreement with the theoretical model developed by Cabrera and Mott (1949) to explain the growth of very thin oxides at low temperatures. The possibility to explain the observed effect with a relatively simple theoretical model opens the possibility to engineers materials with optimized properties.
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Submitted 25 August, 2021;
originally announced August 2021.
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Control of skyrmion chirality in Ta/FeCoB/TaOx trilayers by TaOx oxidation and FeCoB thickness
Authors:
Raj Kumar,
Charles-Elie Fillion,
Bertrand Lovery,
Ibtissem Benguettat-El Mokhtari,
Isabelle Joumard,
Stéphane Auffret,
Laurent Ranno,
Yves Roussigné,
Salim-Mourad Chérif,
Andrey Stashkevich,
Mohamed Belmeguenai,
Claire Baraduc,
Hélène Béa
Abstract:
Skyrmions are magnetic bubbles with nontrivial topology envisioned as data bits for ultrafast and power-efficient spintronic memory and logic devices. They may be stabilized in heavy-metal/ferromagnetic/oxide trilayer systems. The skyrmion chirality is then determined by the sign of the interfacial Dzyaloshinskii-Moriya interaction (DMI). Nevertheless, for apparently identical systems, there is so…
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Skyrmions are magnetic bubbles with nontrivial topology envisioned as data bits for ultrafast and power-efficient spintronic memory and logic devices. They may be stabilized in heavy-metal/ferromagnetic/oxide trilayer systems. The skyrmion chirality is then determined by the sign of the interfacial Dzyaloshinskii-Moriya interaction (DMI). Nevertheless, for apparently identical systems, there is some controversy about the DMI sign. Here, we show that the degree of oxidation of the top interface and the thickness of the ferromagnetic layer play a major role. Using Brillouin light-scattering measurements in Ta/Fe-Co-B/TaOx trilayers, we demonstrate a sign change of the DMI with the degree of oxidation of the Fe-Co-B/TaOx interface. Using polar magneto-optical Kerr effect microscopy, we consistently observe a reversal of the direction of current-induced motion of skyrmions with the oxidation level of TaOx; this is attributed to their chirality reversal. In addition, a second chirality reversal is observed when changing the Fe-Co-B thickness, probably due to the proximity of the two Fe-Co-B interfaces in the ultrathin case. By properly tuning the chirality of the skyrmion, spin-transfer and spin-orbit torques combine constructively to enhance the skyrmion velocity. These observations thus allow us to envision an optimization of the material parameters to produce highly mobile skyrmions. Moreover, this chirality control enables a versatile manipulation of skyrmions and paves the way towards multidirectional devices.
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Submitted 28 February, 2023; v1 submitted 28 September, 2020;
originally announced September 2020.
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Reversible vs. irreversible voltage manipulation of interfacial magnetic anisotropy in Pt/Co/oxide multilayers
Authors:
Aymen Fassatoui,
Jose Pena Garcia,
Jan Vogel,
Laurent Ranno,
Anne Bernand-Mantel,
Hélène Béa,
Sergio Pizzini,
Stefania Pizzini
Abstract:
The perpendicular magnetic anisotropy at the Co/oxide interface in Pt/Co/MOx (MOx = MgOx, AlOx, TbOx) was modified by an electric field using a 10 nm-thick ZrO2 as a solid electrolyte. The large voltage-driven modification of interfacial magnetic anisotropy and the non-volatility of the effect is explained in terms of the migration of oxygen ions towards/away from the Co/MOx interface. While the e…
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The perpendicular magnetic anisotropy at the Co/oxide interface in Pt/Co/MOx (MOx = MgOx, AlOx, TbOx) was modified by an electric field using a 10 nm-thick ZrO2 as a solid electrolyte. The large voltage-driven modification of interfacial magnetic anisotropy and the non-volatility of the effect is explained in terms of the migration of oxygen ions towards/away from the Co/MOx interface. While the effect is reversible in Pt/Co/AlOx and Pt/Co/TbOx, where the Co layer can be oxidised or reduced, in Pt/Co/MgOx the effect has been found to be irreversible. We propose that these differences may be related to the different nature of the ionic conduction within the MOx layers.
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Submitted 24 July, 2020;
originally announced July 2020.
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Electric field control of interfacial Dzyaloshinskii-Moriya interaction in Pt/Co/AlO$_x$ thin films
Authors:
Marine Schott,
Laurent Ranno,
Hélène Béa,
Claire Baraduc,
Stéphane Auffret,
Anne Bernand-Mantel
Abstract:
We studied electric field modification of magnetic properties in a Pt/Co/AlO$_x$ trilayer via magneto-optical Kerr microscopy. We observed the spontaneous formation of labyrinthine magnetic domain structure due to thermally activated domain nucleation and propagation under zero applied magnetic field. A variation of the period of the labyrinthine structure under electric field is observed as well…
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We studied electric field modification of magnetic properties in a Pt/Co/AlO$_x$ trilayer via magneto-optical Kerr microscopy. We observed the spontaneous formation of labyrinthine magnetic domain structure due to thermally activated domain nucleation and propagation under zero applied magnetic field. A variation of the period of the labyrinthine structure under electric field is observed as well as saturation magnetization and magnetic anisotropy variations. Using an analytical formula of the stripe equilibrium width we estimate the variation of the interfacial Dzyaloshinskii-Moriya interaction under electric field as function of the exchange stiffness constant.
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Submitted 31 January, 2020;
originally announced January 2020.
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Skyrmion Brownian circuit implemented in a continuous ferromagnetic thin film
Authors:
Yuma Jibiki,
Minori Goto,
Eiiti Tamura,
Jaehun Cho,
Soma Miki,
Hikaru Nomura,
Titiksha Srivastava,
Willy Lim,
Stephane Auffret,
Claire Baraduc,
Helene Bea,
Yoshishige Suzuki
Abstract:
The fabrication of a skyrmion circuit which stabilizes skyrmions is important to realize micro- to nano-sized skyrmion devices. One example of promising skyrmion-based device is Brownian computers, which have been theoretically proposed, but not realized. It would require a skyrmion circuit in which the skyrmion is stabilized and easily movable. However, the usual skyrmion circuits fabricated by e…
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The fabrication of a skyrmion circuit which stabilizes skyrmions is important to realize micro- to nano-sized skyrmion devices. One example of promising skyrmion-based device is Brownian computers, which have been theoretically proposed, but not realized. It would require a skyrmion circuit in which the skyrmion is stabilized and easily movable. However, the usual skyrmion circuits fabricated by etching of the ferromagnetic film decrease the demagnetization field stabilizing the skyrmions, and thus prevent their formation. In this study, a skyrmion Brownian circuit implemented in a continuous ferromagnetic film with patterned SiO$_2$ cap** to stabilize the skyrmion formation. The patterned SiO$_2$ cap** controls the saturation field of the ferromagnetic layer and forms a wire-shaped skyrmion potential well, which stabilizes skyrmion formation in the circuit. Moreover, we implement a hub (Y-junction) circuit without pinning sites at the junction by patterned SiO$_2$ cap**. This technique enables the efficient control of skyrmion-based memory and logic devices, as well as Brownian computers.
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Submitted 10 May, 2020; v1 submitted 22 September, 2019;
originally announced September 2019.
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Map** different skyrmion phases in double wedges of Ta/FeCoB(tFeCoB)/Ta(tTa)Ox
Authors:
Titiksha Srivastava,
Willy Lim,
Isabelle Joumard,
Stéphane Auffret,
Claire Baraduc,
Hélène Béa
Abstract:
Skyrmions are chiral magnetic textures that have immense potential for applications in spintronic devices. However, their formation is quite challenging and necessitates a subtle balance of the magnetic interactions at play. Here, we study Ta/FeCoB/TaOx trilayer using crossed double wedges i.e. thickness gradients of FeCoB and of top Ta, which is subsequently oxidized leading to an oxidation gradi…
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Skyrmions are chiral magnetic textures that have immense potential for applications in spintronic devices. However, their formation is quite challenging and necessitates a subtle balance of the magnetic interactions at play. Here, we study Ta/FeCoB/TaOx trilayer using crossed double wedges i.e. thickness gradients of FeCoB and of top Ta, which is subsequently oxidized leading to an oxidation gradient. This enabled us to observe micron-sized skyrmions in the vicinity of different transition regions of the sample: from perpendicular magnetic anisotropy to paramagnetic phase and also from perpendicular to in-plane magnetic anisotropy. These observations can be explained by the isolated bubble model taking into account the different energy contributions at play namely anisotropy, exchange, Dzyaloshinskii-Moriya, dipolar and Zeeman. We also qualitatively compare the current-induced motion of skyrmions obtained in different transition regions. Our study not only provides an effective means to form skyrmions by tuning the interfacial magnetic properties but also highlights the differences pertaining to the skyrmions observed in different transition zones, which is extremely crucial for any envisaged application.
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Submitted 10 December, 2019; v1 submitted 28 June, 2019;
originally announced June 2019.
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Creation of Magnetic Skyrmion Bubble Lattices by Ultrafast Laser in Ultrathin Films
Authors:
Soong-Geun Je,
Pierre Vallobra,
Titiksha Srivastava,
Juan-Carlos Rojas-Sánchez,
Thai Ha Pham,
Michel Hehn,
Gregory Malinowski,
Claire Baraduc,
Stéphane Auffret,
Gilles Gaudin,
Stéphane Mangin,
Hélène Béa,
Olivier Boulle
Abstract:
Magnetic skyrmions are topologically nontrivial spin textures which hold great promise as stable information carriers in spintronic devices at the nanoscale. One of the major challenges for develo** novel skyrmion-based memory and logic devices is fast and controlled creation of magnetic skyrmions at ambient conditions. Here we demonstrate the single ultrafast (35-fs) laser pulse-induced generat…
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Magnetic skyrmions are topologically nontrivial spin textures which hold great promise as stable information carriers in spintronic devices at the nanoscale. One of the major challenges for develo** novel skyrmion-based memory and logic devices is fast and controlled creation of magnetic skyrmions at ambient conditions. Here we demonstrate the single ultrafast (35-fs) laser pulse-induced generation of skyrmion bubbles and skyrmion bubble lattices from a ferromagnetic state in sputtered ultrathin magnetic films at room temperature. The skyrmion bubble density increases with the laser fluence in a controlled way, and it finally becomes saturated, forming disordered hexagonal lattices. Moreover, we present that the skyrmion bubble lattice configuration leads to enhanced topological stability as compared to isolated skyrmions, suggesting its promising use in data storage. Our findings shed light on the optical approach to the skyrmion bubble lattice in commonly accessible materials, paving the road toward the emerging skyrmion-based memory and synaptic devices.
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Submitted 10 September, 2018; v1 submitted 3 August, 2018;
originally announced August 2018.
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Large voltage tuning of Dzyaloshinskii-Moriya Interaction: a route towards dynamic control of skyrmion chirality
Authors:
Titiksha Srivastava,
Marine Schott,
Roméo Juge,
Viola Křižáková,
Mohamed Belmeguenai,
Yves Soussigné,
Anne Bernand-Mantel,
Laurent Ranno,
Stefania Pizzini,
Salim-Mourad Chérif,
Andrey Stashkevich,
Stéphane Auffret,
Olivier Boulle,
Gilles Gaudin,
Mair Chshiev,
Claire Baraduc,
Hélène Béa
Abstract:
Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is cruci…
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Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is crucial for the stability of magnetic skyrmions, has been challenging to achieve and has not been reported yet for ultrathin films. Here, we demonstrate 130% variation of DMI with electric field in Ta/FeCoB/TaOx trilayers through Brillouin Light Spectroscopy (BLS). Using polar- Magneto-Optical-Kerr-Effect microscopy, we further show a monotonic variation of DMI and skyrmionic bubble size with electric field, with an unprecedented efficiency. We anticipate through our observations that a sign reversal of DMI with electric field is possible, leading to a chirality switch. This dynamic manipulation of DMI establishes an additional degree of control to engineer programmable skyrmion based memory or logic devices.
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Submitted 26 June, 2018; v1 submitted 26 April, 2018;
originally announced April 2018.
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The skyrmion switch: turning magnetic skyrmion bubbles on and off with an electric field
Authors:
M. Schott,
A. Bernand-Mantel,
L. Ranno,
S. Pizzini,
J. Vogel,
H. Béa,
C. Baraduc,
S. Auffret,
G. Gaudin,
D. Givord
Abstract:
Nanoscale magnetic skyrmions are considered as potential information carriers for future spintronics memory and logic devices. Such applications will require the control of their local creation and annihilation, which involves so far solutions that are either energy consuming or difficult to integrate. Here we demonstrate the control of skyrmion bubbles nucleation and annihilation using electric f…
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Nanoscale magnetic skyrmions are considered as potential information carriers for future spintronics memory and logic devices. Such applications will require the control of their local creation and annihilation, which involves so far solutions that are either energy consuming or difficult to integrate. Here we demonstrate the control of skyrmion bubbles nucleation and annihilation using electric field gating, an easily integrable and potentially energetically efficient solution. We present a detailed stability diagram of the skyrmion bubbles in a Pt/Co/oxide trilayer and show that their stability can be controlled via an applied electric field. An analytical bubble model, with the Dzyaloshinskii-Moriya interaction imbedded in the domain wall energy, account for the observed electrical skyrmion switching effect. This allows us to unveil the origin of the electrical control of skyrmions stability and to show that both magnetic dipolar interaction and the Dzyaloshinskii-Moriya interaction play an important role in the skyrmion bubble stabilization.
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Submitted 18 April, 2017; v1 submitted 4 November, 2016;
originally announced November 2016.
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Imaging ferroelectric domains in multiferroics using a low-energy electron microscope in the mirror operation mode
Authors:
Salia Cherifi,
Riccardo Hertel,
Stéphane Fusil,
Hélène Béa,
Karim Bouzehouane,
Julie Allibe,
Manuel Bibes,
Agnès Barthélémy
Abstract:
We report on low-energy electron microscopy imaging of ferroelectric domains with submicron resolution. Periodic strips of 'up' and 'down'-polarized ferroelectric domains in bismuth ferrite -a room temperature multiferroic- serve as a model system to compare low-energy electron microscopy with the established piezoresponse force microscopy. The results confirm the possibility of full-field imaging…
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We report on low-energy electron microscopy imaging of ferroelectric domains with submicron resolution. Periodic strips of 'up' and 'down'-polarized ferroelectric domains in bismuth ferrite -a room temperature multiferroic- serve as a model system to compare low-energy electron microscopy with the established piezoresponse force microscopy. The results confirm the possibility of full-field imaging of ferroelectric domains with short acquisition times by exploiting the sensitivity of ultraslow electrons to small variations of the electric potential near surfaces in the "mirror" operation mode.
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Submitted 17 August, 2010;
originally announced August 2010.
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Lateral piezoelectric response across ferroelectric domain walls in thin films
Authors:
J. Guyonnet,
H. Bea,
P. Paruch
Abstract:
In purely c-axis oriented PbZr$_{0.2}$Ti$_{0.8}$O$_3$ ferroelectric thin films, a lateral piezoresponse force microscopy signal is observed at the position of 180°domain walls, where the out-of-plane oriented polarization is reversed. Using electric force microscopy measurements we exclude electrostatic effects as the origin of this signal. Moreover, our mechanical simulations of the tip/cantileve…
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In purely c-axis oriented PbZr$_{0.2}$Ti$_{0.8}$O$_3$ ferroelectric thin films, a lateral piezoresponse force microscopy signal is observed at the position of 180°domain walls, where the out-of-plane oriented polarization is reversed. Using electric force microscopy measurements we exclude electrostatic effects as the origin of this signal. Moreover, our mechanical simulations of the tip/cantilever system show that the small tilt of the surface at the domain wall below the tip does not satisfactorily explain the observed signal either. We thus attribute this lateral piezoresponse at domain walls to their sideways motion (shear) under the applied electric field. From simple elastic considerations and the conservation of volume of the unit cell, we would expect a similar lateral signal more generally in other ferroelectric materials, and for all types of domain walls in which the out-of-plane component of the polarization is reversed through the domain wall. We show that in BiFeO$_3$ thin films, with 180, 109 and 71°domain walls, this is indeed the case.
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Submitted 7 June, 2010;
originally announced June 2010.
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Shear effects in lateral piezoresponse force microscopy at 180$^\circ$ ferroelectric domain walls
Authors:
J. Guyonnet,
H. Bea,
F. Guy,
S. Gariglio,
S. Fusil,
K. Bouzehouane,
J. -M. Triscone,
P. Paruch
Abstract:
In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreem…
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In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreement with theoretical predictions. We show that in monoclinically distorted tetragonal BiFeO$_3$ films, this effect is superimposed on the lateral piezoresponse due to actual in-plane polarization, and has to be taken into account in order to correctly interpret the ferroelectric domain configuration.
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Submitted 2 September, 2010; v1 submitted 27 July, 2009;
originally announced July 2009.
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Nanoscale polarization switching mechanisms in multiferroic BiFeO$_3$ thin films
Authors:
H. Béa,
M. Bibes,
A. Barthélémy,
P. Paruch
Abstract:
Ferroelectric switching in BiFeO$_3$ multiferroic thin films with intrinsic ``stripe-like'' and ``bubble-like'' polydomain configurations was studied by piezoresponse force microscopy. Using the local electric field applied by a scanning probe microscope tip, we observe reversal of both out-of-plane and in-plane components of the polarization, with the final domain state depending on the tip swe…
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Ferroelectric switching in BiFeO$_3$ multiferroic thin films with intrinsic ``stripe-like'' and ``bubble-like'' polydomain configurations was studied by piezoresponse force microscopy. Using the local electric field applied by a scanning probe microscope tip, we observe reversal of both out-of-plane and in-plane components of the polarization, with the final domain state depending on the tip swee** direction. In ``bubble-like'' samples, complete control of the polarization is achieved, with in-plane polarization change mediated and stabilized by out-of-plane polarization reversal. In ``stripe-like'' samples the intrinsic domain structure influences polarization switching and in-plane reversal may occur without out-of-plane change. The observed switching behaviour can be well correlated with the radial and vertical components of the highly inhomogeneous electric field applied by the tip.
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Submitted 27 July, 2009;
originally announced July 2009.
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Mechanisms of exchange bias with multiferroic BiFeO3 epitaxial thin films
Authors:
H. Bea,
M. Bibes,
F. Ott,
B. Dupe,
X. -H. Zhu,
S. Petit,
S. Fusil,
C. Deranlot,
K. Bouzehouane,
A. Barthelemy
Abstract:
We have combined neutron scattering and piezoresponse force microscopy to study the relation between the exchange bias observed in CoFeB/BiFeO3 heterostructures and the multiferroic domain structure of the BiFeO3 films. We show that the exchange field scales with the inverse of the ferroelectric and antiferromagnetic domain size, as expected from Malozemoff's model of exchange bias extended to m…
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We have combined neutron scattering and piezoresponse force microscopy to study the relation between the exchange bias observed in CoFeB/BiFeO3 heterostructures and the multiferroic domain structure of the BiFeO3 films. We show that the exchange field scales with the inverse of the ferroelectric and antiferromagnetic domain size, as expected from Malozemoff's model of exchange bias extended to multiferroics. Accordingly, polarized neutron reflectometry reveals the presence of uncompensated spins in the BiFeO3 film at the interface with the CoFeB. In view of these results we discuss possible strategies to switch the magnetization of a ferromagnet by an electric field using BiFeO3.
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Submitted 10 October, 2007;
originally announced October 2007.
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Fractal dimension and size scaling of domains in thin films of multiferroic BiFeO3
Authors:
G. Catalan,
H. Bea,
S. Fusil,
M. Bibes,
P. Paruch,
A. Barthelemy,
J. F. Scott
Abstract:
We have analyzed the morphology of ferroelectric domains in very thin films of multiferroic BiFeO3. Unlike the more common stripe domains observed in thicker films BiFeO3 or in other ferroics, the domains tend not to be straight, but irregular in shape, with significant domain wall roughening leading to a fractal dimensionality. Also contrary to what is usually observed in other ferroics, the do…
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We have analyzed the morphology of ferroelectric domains in very thin films of multiferroic BiFeO3. Unlike the more common stripe domains observed in thicker films BiFeO3 or in other ferroics, the domains tend not to be straight, but irregular in shape, with significant domain wall roughening leading to a fractal dimensionality. Also contrary to what is usually observed in other ferroics, the domain size appears not to scale as the square root of the film thickness. A model is proposed in which the observed domain size as a function of film thickness can be directly linked to the fractal dimension of the domains.
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Submitted 30 July, 2007;
originally announced July 2007.
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Irradiation-induced Ag nanocluster nucleation in silicate glasses: analogy with photography
Authors:
R. Espiau de Lamaestre,
H. Béa,
H. Bernas,
J. Belloni,
J. L. Marignier
Abstract:
The synthesis of Ag nanoclusters in sodalime silicate glasses and silica was studied by optical absorption (OA) and electron spin resonance (ESR) experiments under both low (gamma-ray) and high (MeV ion) deposited energy density irradiation conditions. Both types of irradiation create electrons and holes whose density and thermal evolution - notably via their interaction with defects - are shown…
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The synthesis of Ag nanoclusters in sodalime silicate glasses and silica was studied by optical absorption (OA) and electron spin resonance (ESR) experiments under both low (gamma-ray) and high (MeV ion) deposited energy density irradiation conditions. Both types of irradiation create electrons and holes whose density and thermal evolution - notably via their interaction with defects - are shown to determine the clustering and growth rates of Ag nanocrystals. We thus establish the influence of redox interactions of defects and silver (poly)ions. The mechanisms are similar to the latent image formation in photography: irradiation-induced photoelectrons are trapped within the glass matrix, notably on dissolved noble metal ions and defects, which are thus neutralized (reverse oxidation reactions are also shown to exist). Annealing promotes metal atom diffusion, which in turn leads to cluster nuclei formation. The cluster density depends not only on the irradiation fluence, but also - and primarily - on the density of deposited energy and the redox properties of the glass. Ion irradiation (i.e., large deposited energy density) is far more effective in cluster formation, despite its lower neutralization efficiency (from Ag+ to Ag0) as compared to gamma photon irradiation.
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Submitted 23 December, 2007; v1 submitted 20 March, 2007;
originally announced March 2007.
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Structural distortion and magnetism of BiFeO3 epitaxial thin films: a Raman spectroscopy and neutron diffraction study
Authors:
H. Bea,
M. Bibes,
S. Petit,
J. Kreisel,
A. Barthelemy
Abstract:
A previous study of the growth conditions has shown that single-phase BiFeO3 thin films can only be obtained in a narrow pressure-temperature window and that these films display a weak magnetic moment. Here we study in more detail the structure and the magnetism of single-phase BiFeO3 films by means of reciprocal space map**, Raman spectroscopy and neutron diffraction. X-ray and Raman data sug…
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A previous study of the growth conditions has shown that single-phase BiFeO3 thin films can only be obtained in a narrow pressure-temperature window and that these films display a weak magnetic moment. Here we study in more detail the structure and the magnetism of single-phase BiFeO3 films by means of reciprocal space map**, Raman spectroscopy and neutron diffraction. X-ray and Raman data suggest that the BiFeO3 structure is tetragonal for 70 nm-thick films and changes to monoclinic for 240 nm-thick films, thus remaining different from that of the bulk (rhombohedral) structure. In the 240 nm monoclinically distorted film neutron diffraction experiments allow the observation of a G-type antiferromagnetic order as in bulk single crystals. However, the satellite peaks associated with the long-wavelength cycloid present in bulk BiFeO3 are not observed. The relevance of these findings for the exploitation of the magnetoelectric properties of BiFeO3 is discussed.
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Submitted 22 January, 2007;
originally announced January 2007.
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Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films
Authors:
H. Bea,
M. Bibes,
S. Cherifi,
F. Nolting,
B. Warot-Fonrose,
S. Fusil,
G. Herranz,
C. Deranlot,
E. Jacquet,
K. Bouzehouane,
A. Barthelemy
Abstract:
We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co electrodes. In such structures, a positive tunnel magnetoresistance up to 30% is obtained at low temperature. A second example is the exploitation of the antiferro…
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We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co electrodes. In such structures, a positive tunnel magnetoresistance up to 30% is obtained at low temperature. A second example is the exploitation of the antiferromagnetic spin structure of a BiFeO3 film to induce a sizeable (~60 Oe) exchange bias on a ferromagnetic film of CoFeB, at room temperature. Remarkably, the exchange bias effect is robust upon magnetic field cycling, with no indications of training.
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Submitted 27 September, 2006; v1 submitted 21 July, 2006;
originally announced July 2006.
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Unravelling the origin of the controversial magnetic properties of BiFeO3 thin films
Authors:
Helene Bea,
Manuel Bibes,
Eric Jacquet,
Karsten Rode,
Peter Bencok,
Agnes Barthelemy
Abstract:
Single phase (001)-oriented BiFeO3 (BFO) thin films grown by pulsed laser deposition can only be obtained in a narrow window of deposition pressure and temperature and have a low magnetic moment. Out of the stability window Fe- or Bi-rich impurity phases form, which has a strong impact on the physical and structural properties of the films, even for impurity concentrations hardly detectable by s…
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Single phase (001)-oriented BiFeO3 (BFO) thin films grown by pulsed laser deposition can only be obtained in a narrow window of deposition pressure and temperature and have a low magnetic moment. Out of the stability window Fe- or Bi-rich impurity phases form, which has a strong impact on the physical and structural properties of the films, even for impurity concentrations hardly detectable by standard X-ray diffraction measurements. By using more sensitive tools such as X-Ray absorption spectroscopy and X-ray magnetic circular dichroism and performing advanced X-ray diffraction characterization, we show that in non-optimal conditions Fe forms ferrimagnetic gamma-Fe2O3 precipitates that are responsible for virtually all the ferromagnetic signal measured on such BFO films by standard magnetometry. This confirms that the BFO phase has a very low intrinsic moment that does not depend on strain. We also study the influence of film thickness on the nucleation of parasitic phases and find that epitaxial strain can stabilize the pure BFO phase in slightly over-oxidizing growth conditions.
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Submitted 16 June, 2006;
originally announced June 2006.
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Combining half-metals and multiferroics into epitaxial heterostructures for spintronics
Authors:
H. Bea,
M. Bibes,
M. Sirena,
G. Herranz,
K. Bouzehouane,
E. Jacquet,
S. Fusil,
P. Paruch,
M. Dawber,
J. -P. Contour,
A. Barthelemy
Abstract:
We report on the growth of epitaxial bilayers of the La2/3Sr1/3MnO3 (LSMO) half-metallic ferromagnet and the BiFeO3 (BFO) multiferroic, on SrTiO3(001) by pulsed laser deposition. The growth mode of both layers is two-dimensional, which results in unit-cell smooth surfaces. We show that both materials keep their properties inside the heterostructures, i.e. the LSMO layer (11 nm thick) is ferromag…
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We report on the growth of epitaxial bilayers of the La2/3Sr1/3MnO3 (LSMO) half-metallic ferromagnet and the BiFeO3 (BFO) multiferroic, on SrTiO3(001) by pulsed laser deposition. The growth mode of both layers is two-dimensional, which results in unit-cell smooth surfaces. We show that both materials keep their properties inside the heterostructures, i.e. the LSMO layer (11 nm thick) is ferromagnetic with a Curie temperature of ~330K, while the BFO films shows ferroelectricity down to very low thicknesses (5 nm). Conductive-tip atomic force microscope map**s of BFO/LSMO bilayers for different BFO thicknesses reveal a high and homogeneous resistive state for the BFO film that can thus be used as a ferroelectric tunnel barrier in tunnel junctions based on a half-metal.
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Submitted 24 October, 2005;
originally announced October 2005.
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Influence of parasitic phases on the properties of BiFeO3 epitaxial thin films
Authors:
H. Bea,
M. Bibes,
A. Barthelemy,
K. Bouzehouane,
E. Jacquet,
A. Khodan,
J. -P. Contour,
S. Fusil,
F. Wyczisk,
A. Forget,
D. Lebeugle,
D. Colson,
M. Viret
Abstract:
We have explored the influence of deposition pressure and temperature on the growth of BiFeO3 thin films by pulsed laser deposition onto (001)-oriented SrTiO3 substrates. Single-phase BiFeO3 films are obtained in a region close to 10-2 mbar and 580C. In non-optimal conditions, X-ray diffraction reveals the presence of Fe oxides or of Bi2O3. We address the influence of these parasitic phases on t…
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We have explored the influence of deposition pressure and temperature on the growth of BiFeO3 thin films by pulsed laser deposition onto (001)-oriented SrTiO3 substrates. Single-phase BiFeO3 films are obtained in a region close to 10-2 mbar and 580C. In non-optimal conditions, X-ray diffraction reveals the presence of Fe oxides or of Bi2O3. We address the influence of these parasitic phases on the magnetic and electrical properties of the films and show that films with Fe2O3 systematically exhibit a ferromagnetic behaviour, while single-phase films have a low bulk-like magnetic moment. Conductive-tip atomic force microscopy map**s also indicate that Bi2O3 conductive outgrowths create shortcuts through the BiFeO3 films, thus preventing their practical use as ferroelectric elements in functional heterostructures.
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Submitted 25 April, 2005;
originally announced April 2005.
