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Supercurrent diode effect and magnetochiral anisotropy in few-layer NbSe$_2$
Authors:
Lorenz Bauriedl,
Christian Bäuml,
Lorenz Fuchs,
Christian Baumgartner,
Nicolas Paulik,
Jonas M. Bauer,
Kai-Qiang Lin,
John M. Lupton,
Takashi Taniguchi,
Kenji Watanabe,
Christoph Strunk,
Nicola Paradiso
Abstract:
Nonreciprocal transport refers to charge transfer processes that are sensitive to the bias polarity. Until recently, nonreciprocal transport was studied only in dissipative systems, where the nonreciprocal quantity is the resistance. Recent experiments have, however, demonstrated nonreciprocal supercurrent leading to the observation of a supercurrent diode effect in Rashba superconductors, opening…
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Nonreciprocal transport refers to charge transfer processes that are sensitive to the bias polarity. Until recently, nonreciprocal transport was studied only in dissipative systems, where the nonreciprocal quantity is the resistance. Recent experiments have, however, demonstrated nonreciprocal supercurrent leading to the observation of a supercurrent diode effect in Rashba superconductors, opening the vision of dissipationless electronics. Here we report on a supercurrent diode effect in NbSe$_2$ constrictions obtained by patterning NbSe$_2$ flakes with both even and odd layer number. The observed rectification is driven by valley-Zeeman spin-orbit interaction. We demonstrate a rectification efficiency as large as 60%, considerably larger than the efficiency of devices based on Rashba superconductors. In agreement with recent theory for superconducting transition metal dichalcogenides, we show that the effect is driven by an out-of-plane magnetic field component. Remarkably, we find that the effect becomes field-asymmetric in the presence of an additional in-plane field component transverse to the current direction. Supercurrent diodes offer a further degree of freedom in designing superconducting quantum electronics with the high degree of integrability offered by van der Waals materials.
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Submitted 27 April, 2022; v1 submitted 29 October, 2021;
originally announced October 2021.
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Supercurrent and phase slips in a ballistic carbon nanotube embedded into a van der Waals heterostructure
Authors:
Christian Bäuml,
Lorenz Bauriedl,
Magdalena Marganska,
Milena Grifoni,
Christoph Strunk,
Nicola Paradiso
Abstract:
We demonstrate long-range superconducting correlations in a several micrometer-long carbon nanotube encapsulated in a van der Waals stack between hBN and NbSe$_2$. We show that a substantial supercurrent flows through the nanotube section beneath the NbSe$_2$ crystal as well as through the 2 $μ$m-long section not in contact with it. As expected for superconductors of nanoscopic cross section, the…
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We demonstrate long-range superconducting correlations in a several micrometer-long carbon nanotube encapsulated in a van der Waals stack between hBN and NbSe$_2$. We show that a substantial supercurrent flows through the nanotube section beneath the NbSe$_2$ crystal as well as through the 2 $μ$m-long section not in contact with it. As expected for superconductors of nanoscopic cross section, the current-induced breakdown of superconductivity is characterized by resistance steps due to the nucleation of phase slip centers. All elements of our hybrid device are active building blocks of several recently proposed setups for realization of Majorana fermions in carbon nanotubes.
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Submitted 22 March, 2021; v1 submitted 15 October, 2020;
originally announced October 2020.
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Air tightness of hBN encapsulation and its impact on Raman spectroscopy of van der Waals materials
Authors:
Johannes Holler,
Lorenz Bauriedl,
Tobias Korn,
Andrea Seitz,
Furkan Özyigit,
Michaela Eichinger,
Christian Schüller,
Kenji Watanabe,
Takashi Taniguchi,
Christoph Strunk,
Nicola Paradiso
Abstract:
Raman spectroscopy is a precious tool for the characterization of van der Waals materials, e.g. for the determination of the layer number in thin exfoliated flakes. For sensitive materials, however, this method can be dramatically invasive. In particular, the light intensity required to obtain a significant Raman signal is sufficient to immediately photo-oxidize few-layer thick metallic van der Wa…
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Raman spectroscopy is a precious tool for the characterization of van der Waals materials, e.g. for the determination of the layer number in thin exfoliated flakes. For sensitive materials, however, this method can be dramatically invasive. In particular, the light intensity required to obtain a significant Raman signal is sufficient to immediately photo-oxidize few-layer thick metallic van der Waals materials. In this work we investigated the impact of the environment on Raman characterization of thin NbSe$_2$ crystals. We show that in ambient conditions the flake is locally oxidized even for very low illumination intensity. On the other hand, we observe no degradation if the Raman measurements are performed either in vacuum or on fully hBN-encapsulated samples. Interestingly, we find that covering samples deposited on the usual SiO$_2$ surface only from the top is not sufficient to prevent diffusion of oxygen underneath the layers.
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Submitted 29 July, 2019;
originally announced July 2019.
