Showing 1–16 of 16 results for author: Bauers, S

Synthesis pathways to thin films of stable layered nitrides

Authors: Andriy Zakutayev, Matthew Jankousky, Laszlo Wolf, Yi Feng, Christopher L. Rom, Sage R. Bauers, Olaf Borkiewicz, David A. LaVan, Rebecca W. Smaha, Vladan Stevanovic

Abstract: One of the grand challenges of materials chemistry is the selective synthesis of metastable materials away from equilibrium. Thin film deposition methods with rapid condensation of vapor precursors can readily synthesize metastable phases, but they often struggle to yield the thermodynamic ground state. How can thermodynamically-stable structures for practical applications be grown using kinetical… ▽ More One of the grand challenges of materials chemistry is the selective synthesis of metastable materials away from equilibrium. Thin film deposition methods with rapid condensation of vapor precursors can readily synthesize metastable phases, but they often struggle to yield the thermodynamic ground state. How can thermodynamically-stable structures for practical applications be grown using kinetically-limited synthesis methods? Here, we reveal a synthesis pathway to thermodynamically-stable ordered layered ternary nitride materials, and we explain why disordered metastable intermediate phases tend to form in the first place. We show that starting from atomically dispersed vapor precursors leads to a 3D long-range disordered MgMoN2 thin film polymorph product, with a layered short-range order that has a low-energy transformation barrier to the layered 2D-like stable structure. We extend this synthesis approach to ScTaN2, MgWN2 and MgTa2N3, opening a door to synthesis of other layered nitride thin films with unique semiconducting and quantum properties. △ Less

Submitted 25 June, 2024; originally announced June 2024.

Low-Temperature Synthesis of Stable CaZn$_2$P$_2$ Zintl Phosphide Thin Films as Candidate Top Absorbers

Authors: Shaham Quadir, Zhenkun Yuan, Guillermo Esparza, Sita Dugu, John Mangum, Andrew Pike, Muhammad Rubaiat Hasan, Gideon Kassa, Xiaoxin Wang, Yagmur Coban, Jifeng Liu, Kirill Kovnir, David P. Fenning, Obadiah G. Reid, Andriy Zakutayev, Geoffroy Hautier, Sage R. Bauers

Abstract: The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with band gaps in the range of ~1.5-2.3 eV, for use in the top cell paired with a narrower-gap bottom cell. An outstanding challenge is finding materials with suitable optoelectronic and defect properties, good operational stability, and synthesis conditions that preserve underlying device… ▽ More The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with band gaps in the range of ~1.5-2.3 eV, for use in the top cell paired with a narrower-gap bottom cell. An outstanding challenge is finding materials with suitable optoelectronic and defect properties, good operational stability, and synthesis conditions that preserve underlying device layers. This study demonstrates the Zintl phosphide compound CaZn$_2$P$_2$ as a compelling candidate semiconductor for these applications. We prepare phase pure, 500 nm-thick CaZn$_2$P$_2$ thin films using a scalable reactive sputter deposition process at growth temperatures as low as 100 °C, which is desirable for device integration. UV-vis spectroscopy shows that CaZn$_2$P$_2$ films exhibit an optical absorptivity of ~10$^4$ cm$^-$$^1$ at ~1.95 eV direct band gap. Room-temperature photoluminescence (PL) measurements show near-band-edge optical emission, and time-resolved microwave conductivity (TRMC) measurements indicate a photoexcited carrier lifetime of ~30 ns. CaZn$_2$P$_2$ is highly stable in both ambient conditions and moisture, as evidenced by PL and TRMC measurements. Experimental data are supported by first-principles calculations, which indicate the absence of low-formation-energy, deep intrinsic defects. Overall, our study should motivate future work integrating this potential top cell absorber material into tandem solar cells. △ Less

Submitted 21 June, 2024; originally announced June 2024.

Thin Film Synthesis, Structural Analysis, and Magnetic Properties of Novel Ternary Transition Metal Nitride MnCoN2

Authors: Sita Dugu, Rebecca W Smaha, Shaham Quadir, Andrew Treglia, Shaun ODonnell, Julia Martin, Sharad Mahatara, Glenn Teeter, Stephan Lany, James R Neilson, Sage R Bauers

Abstract: Recent high-throughput computational searches have predicted many novel ternary nitride compounds providing new opportunities for materials discovery in under explored phase spaces. Nevertheless, there are hardly any predictions and/or syntheses that incorporate only transition metals into new ternary nitrides. Here, we report on the synthesis, structure, and properties of MnCoN$_2$, a new ternary… ▽ More Recent high-throughput computational searches have predicted many novel ternary nitride compounds providing new opportunities for materials discovery in under explored phase spaces. Nevertheless, there are hardly any predictions and/or syntheses that incorporate only transition metals into new ternary nitrides. Here, we report on the synthesis, structure, and properties of MnCoN$_2$, a new ternary nitride material comprising only transition metals and N. We find that crystalline MnCoN$_2$ can be stabilized over its competing binaries, and over a tendency of this system to become amorphous, by controlling growth temperature within a narrow window slightly above ambient condition. We find that single-phase MnCoN$_2$ thin films form in a cation-disordered rocksalt crystal structure, which is supported by ab-initio calculations. X-ray photoelectron spectroscopy analysis suggests that MnCoN$_2$ is sensitive to oxygen through various oxides and hydroxides binding to cobalt on the surface. X-ray absorption spectroscopy is used to verify that Mn$^{3+}$ and Co$^{3+}$ cations exist in an octahedrally-coordinated environment, which is distinct from a combination of CoN and MnN binaries and in agreement with the rocksalt-based crystal structure prediction. Magnetic measurements suggest that MnCoN$_2$ has a canted antiferromagnetic ground state below 10 K. We extract a Weiss temperature of $θ$ = -49.7 K, highlighting the antiferromagnetic correlations in MnCoN$_2$. △ Less

Submitted 20 June, 2024; originally announced June 2024.

GdWN$_3$ is a Nitride Perovskite

Authors: Rebecca W. Smaha, John S. Mangum, Neha Yadav, Christopher L. Rom, Brian M. Wieliczka, Baptiste Julien, Andrew Treglia, Craig L. Perkins, Prashun Gorai, Sage R. Bauers, Andriy Zakutayev

Abstract: Nitride perovskites $AB$N$_3$ are an emerging and highly under-explored class of materials that are of interest due to their intriguing calculated ferroelectric, optoelectronic, and other functional properties. Incorporating novel $A$-site cations is one strategy to tune and expand such properties; for example, Gd$^{3+}$ is compelling due to its large magnetic moment, potentially leading to multif… ▽ More Nitride perovskites $AB$N$_3$ are an emerging and highly under-explored class of materials that are of interest due to their intriguing calculated ferroelectric, optoelectronic, and other functional properties. Incorporating novel $A$-site cations is one strategy to tune and expand such properties; for example, Gd$^{3+}$ is compelling due to its large magnetic moment, potentially leading to multiferroic behavior. However, the theoretically predicted ground state of GdWN$_3$ is a non-perovskite monoclinic structure. Here, we experimentally show that GdWN$_3$ crystallizes in a perovskite structure. High-throughput combinatorial sputtering with activated nitrogen is employed to synthesize thin films of Gd$_{1-x}$W$_{x}$N$_{3-y}$ with low oxygen content within the bulk of the films. Ex-situ annealing crystallizes a polycrystalline perovskite phase in a narrow composition window near $x=1$. LeBail fits of synchrotron grazing incidence wide angle X-ray scattering data are consistent with a perovskite ground-state structure. New density functional theory calculations that included antiferromagnetic configurations confirm that the ground-state structure of GdWN$_3$ is a distorted $Pnma$ perovskite with antiferromagnetic ordering, in contrast to prior predictions. Initial property measurements find that GdWN$_3$ is paramagnetic down to $T=2$ K with antiferromagnetic correlations and that the absorption onset depends on cation stoichiometry. This work provides an important step** stone towards the rapid expansion of the emerging family of nitride perovskites and towards our understanding of their potential multiferroic properties. △ Less

Submitted 9 May, 2024; originally announced May 2024.

Comments: 16 pages, 4 figures

Discovery of the Zintl-phosphide BaCd$_{2}$P$_{2}$ as a long carrier lifetime and stable solar absorber

Authors: Zhenkun Yuan, Diana Dahliah, Muhammad Rubaiat Hasan, Gideon Kassa, Andrew Pike, Shaham Quadir, Romain Claes, Cierra Chandler, Yihuang Xiong, Victoria Kyveryga, Philip Yox, Gian-Marco Rignanese, Ismaila Dabo, Andriy Zakutayev, David P. Fenning, Obadiah G. Reid, Sage Bauers, Jifeng Liu, Kirill Kovnir, Geoffroy Hautier

Abstract: Thin-film photovoltaics offers a path to significantly decarbonize our energy production. Unfortunately, current materials commercialized or under development as thin-film solar cell absorbers are far from optimal as they show either low power conversion efficiency or issues with earth-abundance and stability. Entirely new and disruptive materials platforms are rarely discovered as the search for… ▽ More Thin-film photovoltaics offers a path to significantly decarbonize our energy production. Unfortunately, current materials commercialized or under development as thin-film solar cell absorbers are far from optimal as they show either low power conversion efficiency or issues with earth-abundance and stability. Entirely new and disruptive materials platforms are rarely discovered as the search for new solar absorbers is traditionally slow and serendipitous. Here, we use first principles high-throughput screening to accelerate this process. We identify new solar absorbers among known inorganic compounds using considerations on band gap, carrier transport, optical absorption but also on intrinsic defects which can strongly limit the carrier lifetime and ultimately the solar cell efficiency. Screening about 40,000 materials, we discover the Zintl-phosphide BaCd$_{2}$P$_{2}$ as a potential high-efficiency solar absorber. Follow-up experimental work confirms the predicted promises of BaCd$_{2}$P$_{2}$ highlighting an optimal band gap for visible absorption, bright photoluminescence, and long carrier lifetime of up to 30 ns even for unoptimized powder samples. Importantly, BaCd$_{2}$P$_{2}$ does not contain any critical elements and is highly stable in air and water. Our work opens an avenue for a new family of stable, earth-abundant, high-performance Zintl-based solar absorbers. It also demonstrates how recent advances in first principles computation can accelerate the search of photovoltaic materials by combining high-throughput screening with experiment. △ Less

Submitted 27 October, 2023; originally announced October 2023.

Journal ref: Joule 8 (2024) 1412-1429

Bulk and film synthesis pathways to ternary magnesium tungsten nitrides

Authors: Christopher L. Rom, Rebecca W. Smaha, Callan A. Knebel, Karen N. Heinselman, James R. Neilson, Sage R. Bauers, Andriy Zakutayev

Abstract: Bulk solid state synthesis of nitride materials usually leads to thermodynamically stable, cation-ordered crystal structures, whereas thin film synthesis tends to favor disordered, metastable phases. This dichotomy is inconvenient both for basic materials discovery, where non-equilibrium thin film synthesis methods can be useful to overcome reaction kinetic barriers, and for practical technology a… ▽ More Bulk solid state synthesis of nitride materials usually leads to thermodynamically stable, cation-ordered crystal structures, whereas thin film synthesis tends to favor disordered, metastable phases. This dichotomy is inconvenient both for basic materials discovery, where non-equilibrium thin film synthesis methods can be useful to overcome reaction kinetic barriers, and for practical technology applications where stable ground state structures are sometimes required. Here, we explore the uncharted Mg-W-N chemical phase space, using rapid thermal annealing to reconcile the differences between thin film and bulk powder syntheses. Combinatorial co-sputtering synthesis from Mg and W targets in a N$_2$ environment yielded cation-disordered Mg-W-N phases in the rocksalt (0.1< Mg/(Mg+W) <0.9), and hexagonal boron nitride (0.7< Mg/(Mg+W) <0.9) structure types. In contrast, bulk synthesis produced a cation-ordered polymorph of MgWN$_2$ that consists of alternating layers of rocksalt-like [MgN$_6$] octahedra and nickeline-like [WN$_6$] trigonal prisms (denoted "rocksaline"). Thermodynamic calculations corroborate these observations, showing rocksaline MgWN$_2$ is stable while other polymorphs are metastable. We also show that rapid thermal annealing can convert disordered rocksalt films to this cation-ordered polymorph near the MgWN$_2$ stoichiometry. Electronic structure calculations suggest that this rocksalt-to-rocksaline structural transformation should also drive a metallic-to-semiconductor transformation. In addition to revealing three new phases (rocksalt MgWN$_2$ and Mg$_3$WN$_4$, hexagonal boron nitride Mg$_3$WN$_4$, and rocksaline MgWN$_2$), these findings highlight how rapid thermal annealing can control polymorphic transformations, adding a new strategy for exploration of thermodynamic stability in uncharted phase spaces. △ Less

Submitted 3 June, 2023; originally announced June 2023.

Autonomous sputter synthesis of thin film nitrides with composition controlled by Bayesian optimization of optical plasma emission

Authors: Davi M. Febba, Kevin R. Talley, Kendal Johnson, Stephen Schaefer, Sage R. Bauers, John S. Mangum, Rebecca W. Smaha, Andriy Zakutayev

Abstract: Autonomous experimentation has emerged as an efficient approach to accelerate the pace of materials discovery. Although instruments for autonomous synthesis have become popular in molecular and polymer science, solution processing of hybrid materials and nanoparticles, examples of autonomous tools for physical vapor deposition are scarce yet important for the semiconductor industry. Here, we repor… ▽ More Autonomous experimentation has emerged as an efficient approach to accelerate the pace of materials discovery. Although instruments for autonomous synthesis have become popular in molecular and polymer science, solution processing of hybrid materials and nanoparticles, examples of autonomous tools for physical vapor deposition are scarce yet important for the semiconductor industry. Here, we report the design and implementation of an autonomous workflow for sputter deposition of thin films with controlled composition, leveraging a highly automated sputtering reactor custom-controlled by Python, optical emission spectroscopy (OES), and a Bayesian optimization algorithm. We modeled film composition, measured by x-ray fluorescence, as a linear function of emission lines monitored during the co-sputtering from elemental Zn and Ti targets in N$_2$ atmosphere. A Bayesian control algorithm, informed by OES, navigates the space of sputtering power to fabricate films with user-defined composition, by minimizing the absolute error between desired and measured emission signals. We validated our approach by autonomously fabricating Zn$_x$Ti$_{1-x}$N$_y$ films with deviations from the targeted cation composition within relative 3.5 %, even for 15 nm thin films, demonstrating that the proposed approach can reliably synthesize thin films with specific composition and minimal human interference. Moreover, the proposed method can be extended to more difficult synthesis experiments where plasma intensity depends non-linearly on pressure, or the elemental sticking coefficients strongly depend on the substrate temperature. △ Less

Submitted 10 August, 2023; v1 submitted 18 May, 2023; originally announced May 2023.

Structural and Optoelectronic Properties of Thin Film LaWN$_3$

Authors: Rebecca W. Smaha, John S. Mangum, Ian A. Leahy, Julian Calder, Matthew P. Hautzinger, Christopher P. Muzzillo, Craig L. Perkins, Kevin R. Talley, Serena Eley, Prashun Gorai, Sage R. Bauers, Andriy Zakutayev

Abstract: Nitride perovskites are an emerging class of materials that have been predicted to display a range of interesting physics and functional properties, but they are under-explored due to the difficulty of synthesizing oxygen-free nitrides. LaWN3, recently reported as the first oxygen-free nitride perovskite, exhibited polar symmetry and a large piezoelectric coefficient. However, the predicted ferroe… ▽ More Nitride perovskites are an emerging class of materials that have been predicted to display a range of interesting physics and functional properties, but they are under-explored due to the difficulty of synthesizing oxygen-free nitrides. LaWN3, recently reported as the first oxygen-free nitride perovskite, exhibited polar symmetry and a large piezoelectric coefficient. However, the predicted ferroelectric switching was hindered by large leakage current, which motivates better understanding of its electronic structure and optical properties. Here, we study the structure and optoelectronic properties of thin film LaWN3 in greater detail, employing combinatorial techniques to correlate these properties with cation stoichiometry. We report a two-step synthesis that utilizes a more common RF substrate bias instead of a nitrogen plasma source, yielding nanocrystalline films that are crystallized by ex-situ annealing. We investigate the structure and composition of these films, finding polycrystalline La-rich and highly textured W-rich films. The optical absorption onset and temperature- and magnetic field-dependent resistivity are consistent with semiconducting behavior and are highly sensitive to cation stoichiometry, which may be related to amorphous impurities: metallic W or WNx in W-rich samples and insulating La2O3 in La-rich samples. The fractional magnetoresistance is linear and small, consistent with defect scattering, and a W-rich sample has n-type carriers with high densities and low mobilities. We demonstrate a photoresponse in LaWN3: the resistivity of a La-rich sample is enhanced by 28% at low temperature, likely due to a defect trap** mechanism. The physical properties of LaWN3 are highly sensitive to cation stoichiometry, like many oxide perovskites, which therefore calls for precise composition control to utilize the interesting properties observed in this nitride perovskite. △ Less

Submitted 28 April, 2023; originally announced May 2023.

Journal ref: Phys. Rev. Materials 7, 084411 (2023)

Combinatorial synthesis of cation-disordered manganese tin nitride MnSnN$_2$ thin films with magnetic and semiconducting properties

Authors: Christopher L. Rom, Rebecca W. Smaha, Celeste L. Melamed, Rekha R. Schnepf, Karen N. Heinselman, John S. Mangum, Sang-Jun Lee, Stephan Lany, Laura T. Schelhas, Ann L. Greenaway, James R. Neilson, Sage R. Bauers, Jennifer S. Andrew, Adele C. Tamboli

Abstract: Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and semiconducting material, MnSnN$_2$, via combinatorial sputtering of thin films. Grazing incidence wide angle X-ray scattering and laboratory X-ray diffraction studies show… ▽ More Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and semiconducting material, MnSnN$_2$, via combinatorial sputtering of thin films. Grazing incidence wide angle X-ray scattering and laboratory X-ray diffraction studies show a wide composition tolerance for this wurtzite-like MnSnN$_2$, ranging from $20\% <$ Mn/(Mn+Sn) $< 65$\% with cation disorder across this composition space. Magnetic susceptibility measurements reveal a low-temperature transition ($T^{\mathrm{*}} \approx 10$ K) for MnSnN$_2$ and strong antiferromagnetic correlations, although the ordering below this transition may be complex. This finding contrasts with bulk MnSiN$_2$ and MnGeN$_2$, which exhibited antiferromagnetic ordering above 400 K in previous studies. Spectroscopic ellipsometry identifies an optical absorption onset of 1 eV for the experimentally-synthesized phase exhibiting cation disorder, consistent with the computationally-predicted 1.2 eV bandgap for the cation-ordered structure. Electronic conductivity measurements confirm the semiconducting nature of this new phase by showing increasing conductivity with increasing temperature. This work adds to the set of known semiconductors that are paramagnetic at room temperature and will help guide future work targeted at controlling the structure and properties of semiconducting materials that exhibit magnetic behavior. △ Less

Submitted 14 June, 2022; v1 submitted 7 June, 2022; originally announced June 2022.

Journal ref: Chemistry of Materials 2023, 35, 7, 2936-2946

Boron phosphide films by reactive sputtering: Searching for a p-type transparent conductor

Authors: Andrea Crovetto, Jesse M. Adamczyk, Rekha R. Schnepf, Craig L. Perkins, Hannes Hempel, Sage R. Bauers, Eric S. Toberer, Adele C. Tamboli, Thomas Unold, Andriy Zakutayev

Abstract: With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previous experimental reports deal almost exclusively with epitaxial, nominally undoped BP films by chemical vapor deposition. High hole concentrations were often observed, but it is unclear if native defects alone can be resp… ▽ More With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previous experimental reports deal almost exclusively with epitaxial, nominally undoped BP films by chemical vapor deposition. High hole concentrations were often observed, but it is unclear if native defects alone can be responsible for it. Besides, the feasibility of alternative deposition techniques has not been clarified and optical characterization is generally lacking. In this work, we demonstrate reactive sputtering of amorphous BP films, their partial crystallization in a P-containing annealing atmosphere, and extrinsic do** by C and Si. We obtain the highest hole concentration reported to date for p-type BP ($5 \times 10^{20}$ cm$^{-3}$) using C do** under B-rich conditions. We also confirm that bipolar do** is possible in BP. An anneal temperature of at least 1000 $^\circ$C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are much stronger than predicted by theory. Low crystalline quality probably plays a role in both cases. High figures of merit for transparent conductors might be achievable in extrinsically doped BP films with improved crystalline quality. △ Less

Submitted 15 December, 2021; v1 submitted 14 December, 2021; originally announced December 2021.

n-type electrical conduction in SnS thin films

Authors: Issei Suzuki, Sakiko Kawanishi, Sage R. Bauers, Andriy Zakutayev, Zexin Lin, Satoshi Tsukuda, Hiroyuki Shibata, Minseok Kim, Hiroshi Yanagi, Takahisa Omata

Abstract: Tin monosulfide (SnS) usually exhibits p-type conduction due to the low formation enthalpy of acceptor-type defects, and as a result n-type SnS thin films have never been obtained. This study realizes n-type conduction in SnS thin films for the first time by using RF-magnetron sputtering with Cl do** and sulfur plasma source during deposition. N-type SnS thin films are obtained at all the substr… ▽ More Tin monosulfide (SnS) usually exhibits p-type conduction due to the low formation enthalpy of acceptor-type defects, and as a result n-type SnS thin films have never been obtained. This study realizes n-type conduction in SnS thin films for the first time by using RF-magnetron sputtering with Cl do** and sulfur plasma source during deposition. N-type SnS thin films are obtained at all the substrate temperatures employed in this study (221-341 C), exhibiting carrier concentrations and Hall mobilities of ~2 x 10 18 cm-3 and 0.1-1 cm V-1s-1, respectively. The films prepared without sulfur plasma source, on the other hand, exhibit p-type conduction despite containing a comparable amount of Cl donors. This is likely due to a significant amount of acceptor-type defects originating from sulfur deficiency in p-type films, which appears as a broad optical absorption within the band gap. The demonstration of n-type SnS thin films in this study is a breakthrough for the realization of SnS homojunction solar cells, which are expected to have a higher conversion efficiency than the conventional heterojunction SnS solar cells. △ Less

Submitted 21 December, 2021; v1 submitted 12 July, 2021; originally announced July 2021.

Comments: 6 pages, 4 figures, 1 table

Synthesis of tunable $SnS-TaS_2$ nanoscale superlattices

Authors: Dennice M. Roberts, Dylan Bardgett, John D. Perkins, Brian P. Gorman, Andriy Zakutayev, Sage R. Bauers

Abstract: Nanoscale superlattices represent a compelling platform for designed materials as the specific identity and spatial arrangement of constituent layers can lead to tunable properties. A number of kinetically-stabilized layered chalcogenide nanocomposites have taken inspiration from misfit compounds, a thermodynamically stable class of materials formed of van der Waals-bonded (vdW) layers. This class… ▽ More Nanoscale superlattices represent a compelling platform for designed materials as the specific identity and spatial arrangement of constituent layers can lead to tunable properties. A number of kinetically-stabilized layered chalcogenide nanocomposites have taken inspiration from misfit compounds, a thermodynamically stable class of materials formed of van der Waals-bonded (vdW) layers. This class of vdW heterostructure superlattices have been reported in telluride and selenide chemistries, but have not yet been extended to sulfides. Here we present $SnS-TaS_2$ nanoscale superlattices with tunable layer architecture. Thin films are prepared from layered amorphous precursors and deposited to mimic the targeted superlattice; subsequent low temperature annealing activates self-assembly into designed nanocomposites. Structure and composition for materials are investigated that span stacking sequences between $[(SnS)_{1+δ}]_3(TaS_2)_1$ and $(SnS)_7(TaS_2)_1$ using x-ray diffraction, x-ray fluorescence, and transmission electron microscopy. A graded deposition approach is implemented to stabilize heterostructures of multiple stacking sequences with a single preparation. Precise control over the architecture of such nanoscale superlattices is a critical path towards controlling the properties of quantum materials and constituent devices. △ Less

Submitted 14 April, 2020; originally announced April 2020.

High-throughput fabrication and semi-automated characterization of oxide thin film transistors

Authors: Yanbing Han, Sage Bauers, Qun Zhang, Andriy Zakutayev

Abstract: High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatially-resolved characterization to assess how various physical factors affect material properties under varying measurement conditions. Simil… ▽ More High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatially-resolved characterization to assess how various physical factors affect material properties under varying measurement conditions. Similarly, multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance. In this work, we apply these high throughput experimental methods to thin film transistors (TFTs), demonstrating combinatorial device fabrication and semi-automated characterization using sputtered Indium-Gallium-Zinc-Oxide (IGZO) TFTs as a case study. We show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library, such as channel thickness and length, channel cation compositions, and oxygen atmosphere during deposition. We also present a semi-automated method to measure the 44 devices fabricated on a 50x50mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time. Finally, we propose a fully automated characterization system for similar TFT libraries, which can be coupled with high throughput data analysis. These results demonstrate that high throughput methods can accelerate the investigation of TFTs and other electronic devices. △ Less

Submitted 22 August, 2019; originally announced August 2019.

Comments: 13 pages, 8 figures

COMBIgor: data analysis package for combinatorial materials science

Authors: Kevin R. Talley, Sage R. Bauers, Celeste L. Melamed, Meagan C. Papac, Karen Heinselman, Imran Khan, Dennice M. Roberts, Valerie Jacobson, Allison Mis, Geoff L. Brennecka, John D. Perkins, Andriy Zakutayev

Abstract: Combinatorial experiments involve synthesis of sample libraries with lateral composition gradients requiring spatially-resolved characterization of structure and properties. Due to maturation of combinatorial methods and their successful application in many fields, the modern combinatorial laboratory produces diverse and complex data sets requiring advanced analysis and visualization techniques. I… ▽ More Combinatorial experiments involve synthesis of sample libraries with lateral composition gradients requiring spatially-resolved characterization of structure and properties. Due to maturation of combinatorial methods and their successful application in many fields, the modern combinatorial laboratory produces diverse and complex data sets requiring advanced analysis and visualization techniques. In order to utilize these large data sets to uncover new knowledge, the combinatorial scientist must engage in data science. For data science tasks, most laboratories adopt common-purpose data management and visualization software. However, processing and cross-correlating data from various measurement tools is no small task for such generic programs. Here we describe COMBIgor, a purpose-built open-source software package written in the commercial Igor Pro environment, designed to offer a systematic approach to loading, storing, processing, and visualizing combinatorial data sets. It includes (1) methods for loading and storing data sets from combinatorial libraries, (2) routines for streamlined data processing, and (3) data analysis and visualization features to construct figures. Most importantly, COMBIgor is designed to be easily customized by a laboratory, group, or individual in order to integrate additional instruments and data-processing algorithms. Utilizing the capabilities of COMBIgor can significantly reduce the burden of data management on the combinatorial scientist. △ Less

Submitted 30 April, 2019; v1 submitted 16 April, 2019; originally announced April 2019.

Ternary Nitride Semiconductors in the Rocksalt Crystal Structure

Authors: Sage R. Bauers, Aaron Holder, Wenhao Sun, Celeste L. Melamed, Rachel Woods-Robinson, John Mangum, John Perkins, William Tumas, Brian Gorman, Adele Tamboli, Gerbrand Ceder, Stephan Lany, Andriy Zakutayev

Abstract: Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optoelectronic devices. In contrast, rocksalt-based nitrides are known for their metallic and refractory properties. Breaking this dichotomy, here we report on ternary nitride semiconductors with rocksalt crystal structures, remarkable optoelectronic properties, and the general chemical formula Mg$_{x}$TM… ▽ More Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optoelectronic devices. In contrast, rocksalt-based nitrides are known for their metallic and refractory properties. Breaking this dichotomy, here we report on ternary nitride semiconductors with rocksalt crystal structures, remarkable optoelectronic properties, and the general chemical formula Mg$_{x}$TM$_{1-x}$N (TM=Ti, Zr, Hf, Nb). These compounds form over a broad metal composition range and our experiments show that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8-2.1 eV). Lattice parameters are compatible with growth on a variety of substrates, and epitaxially grown MgZrN$_{2}$ exhibits remarkable electron mobilities approaching 100 cm$^{2}$V$^{-1}$s$^{-1}$. Ab initio calculations reveal that these compounds have disorder-tunable optical properties, large dielectric constants and low carrier effective masses that are insensitive to disorder. Overall, these experimental and theoretical results highlight Mg$_{G-3}$TMN$_{G-2}$ rocksalts as a new class of semiconductor materials with promising properties for optoelectronic applications. △ Less

Submitted 12 October, 2018; originally announced October 2018.

A Map of the Inorganic Ternary Metal Nitrides

Authors: Wenhao Sun, Christopher Bartel, Elisabetta Arca, Sage Bauers, Bethany Matthews, Bernardo Orvañanos, Bor-Rong Chen, Michael F. Toney, Laura T. Schelhas, William Tumas, Janet Tate, Andriy Zakutayev, Stephan Lany, Aaron Holder, Gerbrand Ceder

Abstract: Exploratory synthesis in novel chemical spaces is the essence of solid-state chemistry. However, uncharted chemical spaces can be difficult to navigate, especially when materials synthesis is challenging. Nitrides represent one such space, where stringent synthesis constraints have limited the exploration of this important class of functional materials. Here, we employ a suite of computational mat… ▽ More Exploratory synthesis in novel chemical spaces is the essence of solid-state chemistry. However, uncharted chemical spaces can be difficult to navigate, especially when materials synthesis is challenging. Nitrides represent one such space, where stringent synthesis constraints have limited the exploration of this important class of functional materials. Here, we employ a suite of computational materials discovery and informatics tools to construct a large stability map of the inorganic ternary metal nitrides. Our map clusters the ternary nitrides into chemical families with distinct stability and metastability, and highlights hundreds of promising new ternary nitride spaces for experimental investigation--from which we experimentally realized 7 new Zn- and Mg-based ternary nitrides. By extracting the mixed metallicity, ionicity, and covalency of solid-state bonding from the DFT-computed electron density, we reveal the complex interplay between chemistry, composition, and electronic structure in governing large-scale stability trends in ternary nitride materials. △ Less

Submitted 24 September, 2018; originally announced September 2018.