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Regimes of electronic transport in doped InAs nanowire
Authors:
A A Zhukov,
I E Batov
Abstract:
We report on the low temperature measurements of the magnetotransport in Si-doped InAs quantum wire in the presence of a charged tip of an atomic force microscope serving as a mobile gate, i.e. scanning gate microscopy (SGM). By altering the carrier concentration with back gate voltage, we transfer the wire through several transport regimes: from residual Coulomb blockade to nonlinear resonance re…
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We report on the low temperature measurements of the magnetotransport in Si-doped InAs quantum wire in the presence of a charged tip of an atomic force microscope serving as a mobile gate, i.e. scanning gate microscopy (SGM). By altering the carrier concentration with back gate voltage, we transfer the wire through several transport regimes: from residual Coulomb blockade to nonlinear resonance regime, followed by linear resonance regime and, finally, to almost homogeneous diffusion regime. We demonstrate direct relations between patterns measured with scanning gate microscopy and spectra of universal conductance fluctuations. A clear sign of fractal behavior of magnetoconductance dependence is observed for non-linear and linear resonance transport regimes.
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Submitted 23 May, 2023;
originally announced May 2023.
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Controllable supercurrent in mesoscopic superconductor-normal metal-ferromagnet crosslike Josephson structures
Authors:
Tatiana E. Golikova,
Michael J. Wolf,
Detlef Beckmann,
Grigory A. Penzyakov,
Igor E. Batov,
Irina V. Bobkova,
Alexander M. Bobkov,
Valery V. Ryazanov
Abstract:
A nonmonotonic dependence of the critical Josephson supercurrent on the injection current through a normal metal/ferromagnet weak link from a single domain ferromagnetic strip has been observed experimentally in nanofabricated planar crosslike S-N/F-S Josephson structures. This behavior is explained by 0-pi and pi-0 transitions, which can be caused by the suppression and Zeeman splitting of the in…
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A nonmonotonic dependence of the critical Josephson supercurrent on the injection current through a normal metal/ferromagnet weak link from a single domain ferromagnetic strip has been observed experimentally in nanofabricated planar crosslike S-N/F-S Josephson structures. This behavior is explained by 0-pi and pi-0 transitions, which can be caused by the suppression and Zeeman splitting of the induced superconductivity due to interaction between N and F layers, and the injection of spin-polarized current into the weak link. A model considering both effects has been developed. It shows the qualitative agreement between the experimental results and the theoretical model in terms of spectral supercurrent-carrying density of states of S-N/F-S structure and the spin-dependent double-step nonequilibrium quasiparticle distribution.
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Submitted 7 August, 2020;
originally announced August 2020.
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Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions
Authors:
A. V. Bubis,
A. O. Denisov,
S. U. Piatrusha,
I. E. Batov,
J. Becker,
J. Treu,
D. Ruhstorfer,
G. Koblmüller,
V. S. Khrapai
Abstract:
We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport signatures characteristic of diffusive junctions with highly transparent interfaces - sizable excess current, re-entrant resistance effect and proximity gap va…
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We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport signatures characteristic of diffusive junctions with highly transparent interfaces - sizable excess current, re-entrant resistance effect and proximity gap values ($Δ_N$) close to the Al gap ($Δ_0$). At decreasing $V_g$, we observe a reduction of the proximity gap down to $Δ_N\approxΔ_0/2$ at NW conductances $\sim2e^2/h$, which is interpreted in terms of carrier density dependent reduction of the Al/InAs interface transparency. We demonstrate that the experimental behavior of $Δ_N$ is closely reproduced by a model with shallow potential barrier at the Al/InAs interface.
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Submitted 1 May, 2017;
originally announced May 2017.
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Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers
Authors:
C. Weyrich,
M. Drögeler,
J. Kampmeier,
M. Eschbach,
G. Mussler,
T. Merzenich,
T. Stoica,
I. E. Batov,
J. Schubert,
L. Plucinski,
B. Beschoten,
C. M. Schneider,
C. Stampfer,
D. Grützmacher,
Th. Schäpers
Abstract:
Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the…
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Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the (Bi1-xSbx)2Te3 layers with an intermediate Sb content show spatial composition inhomogeneities. The observed spectra broadening in angular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena. Upon increasing the Sb content from x=0 to 1 the ARPES measurements show a shift of the Fermi level from the conduction band to the valence band. This shift is also confirmed by corresponding magnetotransport measurements where the conductance changes from n- to p-type. In this transition region, an increase of the resistivity is found, indicating a location of the Fermi level within the band gap region. More detailed measurements in the transition region reveals that the transport takes place in two independent channels. By means of a gate electrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermi level within the topologically protected surface states.
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Submitted 18 October, 2016; v1 submitted 3 November, 2015;
originally announced November 2015.
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Anomalous superconducting proximity effect and coherent charge transport in semiconducting thin film with spin-orbit interaction
Authors:
A. V. Burmistrova,
I. A. Devyatov,
I. E. Batov
Abstract:
We present a microscopic theory of the superconducting proximity effect in a semiconducting thin film with spin-orbit interaction ($N_{SO}$) in an external magnetic field. We demonstrate that an effective 1D Hamiltonian which describes induced superconductivity in $N_{SO}$ in contact with a usual $s$-wave superconductor possesses not only spin-singlet induced superconducting order parameter term,…
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We present a microscopic theory of the superconducting proximity effect in a semiconducting thin film with spin-orbit interaction ($N_{SO}$) in an external magnetic field. We demonstrate that an effective 1D Hamiltonian which describes induced superconductivity in $N_{SO}$ in contact with a usual $s$-wave superconductor possesses not only spin-singlet induced superconducting order parameter term, as commonly adopted, but spin triplet order parameter term also. Using this new effective Hamiltonian we confirm previous results for a normal current across contacts of $N_{SO}$ with a normal metal and for a Josephson current with the same $N_{SO}$ with induced superconductivity, obtained previously in the framework of the phenomenological Hamiltonian without spin-triplet terms. However, a calculated current-phase relation across the transparent contact between $N_{SO}$ with induced superconductivity in magnetic field and usual $s$-wave superconductor differs significantly from previous results. We suggest the experiment which can confirm our theoretical predictions.
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Submitted 25 September, 2015; v1 submitted 27 August, 2015;
originally announced August 2015.
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Nonlocal supercurrent in mesoscopic multiterminal SNS Josephson junction in the low-temperature limit
Authors:
T. E. Golikova,
M. J. Wolf,
D. Beckmann,
I. E. Batov,
I. V. Bobkova,
A. M. Bobkov,
V. V. Ryazanov
Abstract:
Nonlocal supercurrent was observed in mesoscopic planar SNS Josephson junction with additional normal metal electrodes when nonequilibrium quasiparticles were injected from the normal metal electrode in one of the superconducting banks of the Josephson junction in the absence of net transport current through the junction. We claim that the effect observed is due to a supercurrent counterflow appea…
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Nonlocal supercurrent was observed in mesoscopic planar SNS Josephson junction with additional normal metal electrodes when nonequilibrium quasiparticles were injected from the normal metal electrode in one of the superconducting banks of the Josephson junction in the absence of net transport current through the junction. We claim that the effect observed is due to a supercurrent counterflow appearing to compensate the quasiparticle flow in the SNS weak link. We have measured SNS junction response for different distances from the quasiparticle injector to the SNS junction at temperatures far below the superconducting transition temperature. The charge-imbalance relaxation length was estimated by using modified Kadin, Smith and Skocpol scheme in the case of planar geometry. The model developed allows to describe the interplay of the charge imbalance and Josephson effects in the nanoscale proximity system in detail.
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Submitted 17 March, 2014; v1 submitted 27 December, 2013;
originally announced December 2013.
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Supercurrent in Nb/InAs-Nanowire/Nb Josephson junctions
Authors:
H. Y. Gunel,
I. E. Batov,
H. Hardtdegen,
K. Sladek,
A. Winden,
K. Weis,
G. Panaitov,
D. Gruetzmacher,
Th. Schaepers
Abstract:
We report on the fabrication and measurements of planar mesoscopic Josephson junctions formed by InAs nanowires coupled to superconducting Nb terminals. The use of Si-doped InAs-nanowires with different bulk carrier concentrations allowed to tune the properties of the junctions. We have studied the junction characteristics as a function of temperature, gate voltage, and magnetic field. In junction…
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We report on the fabrication and measurements of planar mesoscopic Josephson junctions formed by InAs nanowires coupled to superconducting Nb terminals. The use of Si-doped InAs-nanowires with different bulk carrier concentrations allowed to tune the properties of the junctions. We have studied the junction characteristics as a function of temperature, gate voltage, and magnetic field. In junctions with high do** concentrations in the nanowire Josephson supercurrent values up to 100\,nA are found. Owing to the use of Nb as superconductor the Josephson coupling persists at temperatures up to 4K. In all junctions the critical current monotonously decreased with the magnetic field, which can be explained by a recently developed theoretical model for the proximity effect in ultra-small Josephson junctions. For the low-doped Josephson junctions a control of the critical current by varying the gate voltage has been demonstrated. We have studied conductance fluctuations in nanowires coupled to superconducting and normal metal terminals. The conductance fluctuation amplitude is found to be about 6 times larger in superconducting contacted nanowires. The enhancement of the conductance fluctuations is attributed to phase-coherent Andreev reflection as well as to the large number of phase-coherent channels due to the large superconducting gap of the Nb electrodes.
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Submitted 10 May, 2012;
originally announced May 2012.
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Double proximity effect in hybrid planar Superconductor-(Normal metal/Ferromagnet)-Superconductor structures
Authors:
Tatiana E. Golikova,
Florian Huebler,
Detlef Beckmann,
Igor E. Batov,
Tatiana Yu. Karminskaya,
Mikhail Yu. Kupriyanov,
Alexander A. Golubov,
Valery V. Ryazanov
Abstract:
We have investigated the differential resistance of hybrid planar Al-(Cu/Fe)-Al submicron bridges at low temperatures and in weak magnetic fields. The structure consists of Cu/Fe-bilayer forming a bridge between two superconducting Al-electrodes. In superconducting state of Al-electrodes, we have observed a double-peak peculiarity in differential resistance of the S-(N/F)-S structures at a bias vo…
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We have investigated the differential resistance of hybrid planar Al-(Cu/Fe)-Al submicron bridges at low temperatures and in weak magnetic fields. The structure consists of Cu/Fe-bilayer forming a bridge between two superconducting Al-electrodes. In superconducting state of Al-electrodes, we have observed a double-peak peculiarity in differential resistance of the S-(N/F)-S structures at a bias voltage corresponding to the minigap. We claim that this effect (the doubling of the minigap) is due to an electron spin polarization in the normal metal which is induced by the ferromagnet. We have demonstrated that the double-peak peculiarity is converted to a single peak at a coercive applied field corresponding to zero magnetization of the Fe-layer.
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Submitted 24 February, 2012;
originally announced February 2012.
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Josephson supercurrent in Nb/InN-nanowire/Nb junctions
Authors:
R. Frielinghaus,
I. E. Batov,
M. Weides,
H. Kohlstedt,
R. Calarco,
Th. Schaepers
Abstract:
We experimentally studied the Josephson supercurrent in Nb/InN-nanowire/Nb junctions. Large critical currents up to 5.7 $μ$A have been achieved, which proves the good coupling of the nanowire to the superconductor. The effect of a magnetic field perpendicular to the plane of the Josephson junction on the critical current has been studied. The observed monotonous decrease of the critical current…
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We experimentally studied the Josephson supercurrent in Nb/InN-nanowire/Nb junctions. Large critical currents up to 5.7 $μ$A have been achieved, which proves the good coupling of the nanowire to the superconductor. The effect of a magnetic field perpendicular to the plane of the Josephson junction on the critical current has been studied. The observed monotonous decrease of the critical current with magnetic field is explained by the magnetic pair-breaking effect in planar Josephson junctions of ultra-narrow width [J. C. Cuevas and F. S. Bergeret, Phys. Rev. Lett. 99, 217002 (2007)]
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Submitted 14 January, 2010;
originally announced January 2010.
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Josephson tunnel junctions with strong ferromagnetic interlayer
Authors:
A. A. Bannykh,
J. Pfeiffer,
V. S. Stolyarov,
I. E. Batov,
V. V. Ryazanov,
M. Weides
Abstract:
The dependence of the critical current density j_c on the ferromagnetic interlayer thickness d_F was determined for Nb/Al_2O_3/Cu/Ni/Nb Josephson tunnel junctions with ferromagnetic \Ni interlayer from very thin film thicknesses (\sim 1 nm) upwards and classified into F-layer thickness regimes showing a dead magnetic layer, exchange, exchange + anisotropy and total suppression of j_c. The Joseph…
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The dependence of the critical current density j_c on the ferromagnetic interlayer thickness d_F was determined for Nb/Al_2O_3/Cu/Ni/Nb Josephson tunnel junctions with ferromagnetic \Ni interlayer from very thin film thicknesses (\sim 1 nm) upwards and classified into F-layer thickness regimes showing a dead magnetic layer, exchange, exchange + anisotropy and total suppression of j_c. The Josephson coupling changes from 0 to pi as function of d_F, and -very close to the crossover thickness- as function of temperature. The strong suppression of the supercurrent in comparison to non-magnetic \Nb/Al_2O_3/Cu/Nb junctions indicated that the insertion of a F-layer leads to additional interface scattering. The transport inside the dead magnetic layer was in dirty limit. For the magnetically active regime fitting with both the clean and the dirty limit theory were carried out, indicating dirty limit condition, too. The results were discussed in the framework of literature
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Submitted 10 November, 2008; v1 submitted 25 August, 2008;
originally announced August 2008.
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Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts
Authors:
I. E. Batov,
Th. Schapers,
N. M. Chtchelkatchev,
H. Hardtdegen,
A. V. Ustinov
Abstract:
We study the magnetotransport in small hybrid junctions formed by high-mobility GaInAs/InP heterostructures coupled to superconducting (S) and normal metal (N) terminals. Highly transmissive superconducting contacts to a two-dimensional electron gas (2DEG) located in a GaInAs/InP heterostructure are realized by using a Au/NbN layer system. The magnetoresistance of the S/2DEG/N structures is stud…
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We study the magnetotransport in small hybrid junctions formed by high-mobility GaInAs/InP heterostructures coupled to superconducting (S) and normal metal (N) terminals. Highly transmissive superconducting contacts to a two-dimensional electron gas (2DEG) located in a GaInAs/InP heterostructure are realized by using a Au/NbN layer system. The magnetoresistance of the S/2DEG/N structures is studied as a function of dc bias current and temperature. At bias currents below a critical value, the resistance of the S/2DEG/N structures develops a strong oscillatory dependence on the magnetic field, with an amplitude of the oscillations considerably larger than that of the reference N/2DEG/N structures. The experimental results are qualitatively explained by taking Andreev reflection in high magnetic fields into account.
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Submitted 1 August, 2007; v1 submitted 23 April, 2007;
originally announced April 2007.
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Temperature and Frequency Dependence of Complex Conductance of Ultrathin YBa2Cu3O7-x Films: A Study of Vortex-Antivortex Pair Unbinding
Authors:
V. A. Gasparov,
G. Tsydynzhapov,
I. E. Batov,
Qi Li
Abstract:
We have studied the temperature dependencies of the complex sheet conductance of 1-3 unit cell (UC) thick YBa2Cu3O7-x films sandwiched between semiconducting Pr0.6Y0.4Ba2Cu3O7-x layers at high frequencies. Experiments have been carried out in a frequency range between: 2 - 30 MHz with one-spiral coil technique, 100 MHz - 1 GHz frequency range with a new technique using the spiral coil cavity and…
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We have studied the temperature dependencies of the complex sheet conductance of 1-3 unit cell (UC) thick YBa2Cu3O7-x films sandwiched between semiconducting Pr0.6Y0.4Ba2Cu3O7-x layers at high frequencies. Experiments have been carried out in a frequency range between: 2 - 30 MHz with one-spiral coil technique, 100 MHz - 1 GHz frequency range with a new technique using the spiral coil cavity and at 30 GHz by aid of a resonant cavity technique. The real and imaginary parts of the mutual-inductance between a coil and a film were measured and converted to complex conductivity by aid of the inversion procedure. We have found a quadratic temperature dependence of the kinetic inductance, L_k^-1(T), at low temperatures independent of frequency, with a break in slope at T^dc_BKT, the maximum of real part of conductance and a large shift of the break temperature and the maximum position to higher temperatures with increasing frequency. We obtain from these data the universal ratio T^dc_BKT/L_k^-1(T^dc_BKT) = 25, 25, and 17 nHK for 1-, 2- and 3UC films, respectively in close agreement with theoretical prediction of 12 nHK for vortex-antivortex unbinding transition. The activated temperature dependence of the vortex diffusion constant was observed and discussed in the framework of vortex-antivortex pair pinning.
PACS numbers: 74.80.Dm, 74.25.Nf, 74.72.Bk, 74.76.Bz
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Submitted 9 November, 2004;
originally announced November 2004.
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Andreev reflection and enhanced subgap conductance in NbN/Au/InGaAs-InP junctions
Authors:
I. E. Batov,
Th. Schaepers,
A. A. Golubov,
A. V. Ustinov
Abstract:
We report on the fabrication of highly transparent superconductor/normal metal/two-dimensional electron gas junctions formed by a superconducting NbN electrode, a thin (10nm) Au interlayer, and a two-dimensional electron gas in a InGaAs/InP heterostructure. High junction transparency has been achieved by exploiting of a newly developed process of Au/NbN evaporation and rapid annealing at 400C. T…
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We report on the fabrication of highly transparent superconductor/normal metal/two-dimensional electron gas junctions formed by a superconducting NbN electrode, a thin (10nm) Au interlayer, and a two-dimensional electron gas in a InGaAs/InP heterostructure. High junction transparency has been achieved by exploiting of a newly developed process of Au/NbN evaporation and rapid annealing at 400C. This allowed us to observe for the first time a decrease in the differential resistance with pronounced double-dip structure within the superconducting energy gap in superconductor-2DEG proximity systems. The effect of a magnetic field perpendicular to the plane of the 2DEG on the differential resistance of the interface was studied. It has been found that the reduced subgap resistance remains in high magnetic fields. Zero-field data are analyzed within the previously established quasiclassical model for the proximity effect.
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Submitted 10 May, 2004; v1 submitted 29 September, 2003;
originally announced September 2003.
