Showing 1–50 of 55 results for author: Batlogg, B

Critical fields and fluctuations determined from specific heat and magnetoresistance in the same nanogram SmFeAs(O,F) single crystal

Authors: Stanislaw Galeski, Philip W. J. Moll, N. D. Zhigadlo, Kurt Mattenberger, Bertram Batlogg

Abstract: Through a direct comparison of specific heat and magneto-resistance we critically asses the nature of superconducting fluctuations in the same nano-gram crystal of SmFeAs(O, F). We show that although the superconducting fluctuation contribution to conductivity scales well within the 2D-LLL scheme its predictions contrast the inherently 3D nature of SmFeAs(O, F) in the vicinity T_{c}. Furthermore t… ▽ More Through a direct comparison of specific heat and magneto-resistance we critically asses the nature of superconducting fluctuations in the same nano-gram crystal of SmFeAs(O, F). We show that although the superconducting fluctuation contribution to conductivity scales well within the 2D-LLL scheme its predictions contrast the inherently 3D nature of SmFeAs(O, F) in the vicinity T_{c}. Furthermore the transition seen in specific heat cannot be satisfactory described either by the LLL or the XY scaling. Additionally we have validated, through comparing Hc2 values obtained from the entropy conservation construction (Hab=-19.5 T/K and Hab=-2.9 T/K), the analysis of fluctuation contribution to conductivity as a reasonable method for estimating the Hc2 slope. △ Less

Submitted 8 September, 2017; v1 submitted 6 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. B 96, 104511 (2017)

Interplay between magnetism and sodium vacancy ordering in NaxCoO2

Authors: Stanislaw Galeski, Kurt Mattenberger, Bertram Batlogg

Abstract: Using a combination of low-temperature nanocalorimetry and x-ray diffraction we identify three temperature regimes characterized by distinct Na ordering patterns (low temperature up to 290 K, intermediate 290-340 K, and high above 340 K). Through freezing-in of these patterns we establish the two key roles sodium intercalation plays in the formation of the magnetic ground state: supplying the prop… ▽ More Using a combination of low-temperature nanocalorimetry and x-ray diffraction we identify three temperature regimes characterized by distinct Na ordering patterns (low temperature up to 290 K, intermediate 290-340 K, and high above 340 K). Through freezing-in of these patterns we establish the two key roles sodium intercalation plays in the formation of the magnetic ground state: supplying the proper electron count for in-plane ferromagnetic interaction and through the 3D sodium ordering providing the interplane antiferromagnetic exchange path. △ Less

Submitted 9 October, 2016; originally announced October 2016.

Journal ref: Phys. Rev. B 94, 1404026(R) (2016)

Unusual anisotropic response of the charge carrier mobility to uniaxial mechanical strain in Rubrene crystals

Authors: Tobias Morf, Thomas Mathis, Bertram Batlogg

Abstract: Charge transport in Rubrene single crystals under uniaxial mechanical strain is systematically investigated in the crystal's two in-plane transport directions both under tensile and compressive strain applied parallel or perpendicular to the current direction. The density of trap states remains unchanged. The field-effect mobility as a benchmark figures for intermolecular transport is found to inc… ▽ More Charge transport in Rubrene single crystals under uniaxial mechanical strain is systematically investigated in the crystal's two in-plane transport directions both under tensile and compressive strain applied parallel or perpendicular to the current direction. The density of trap states remains unchanged. The field-effect mobility as a benchmark figures for intermolecular transport is found to increase with compressive strain and vice versa with a magnitude of -1.5 cm2/Vs per percent of strain independently of tranport direction. A very remarkable result is the mobility change when the crystal is strained perpendicular to the transport direction. While this enhancement could be quantitatively explained from an improved wave-function overlap, mobility in the perpendicular direction improves even more, contrary to simple geometric considerations based od later expansion and usual Poisson ratios. This result emphasises the central role of the stress induced variations of the dynamics wave function overlap in organic molecular crystals. △ Less

Submitted 28 June, 2016; v1 submitted 22 June, 2016; originally announced June 2016.

Comments: 5 pages, 8 figures

High-temperature superconductivity from fine-tuning of Fermi-surface singularities in iron oxypnictides

Authors: A. Charnukha, D. V. Evtushinsky, C. E. Matt, N. Xu, M. Shi, B. Büchner, N. D. Zhigadlo, B. Batlogg, S. V. Borisenko

Abstract: In the family of the iron-based superconductors, the $RE$FeAsO-type compounds (with $RE$ being a rare-earth metal) exhibit the highest bulk superconducting transition temperatures ($T_{\mathrm{c}}$) up to $55\ \textrm{K}$ and thus hold the key to the elusive pairing mechanism. Recently, it has been demonstrated that the intrinsic electronic structure of SmFe$_{0.92}$Co$_{0.08}$AsO (… ▽ More In the family of the iron-based superconductors, the $RE$FeAsO-type compounds (with $RE$ being a rare-earth metal) exhibit the highest bulk superconducting transition temperatures ($T_{\mathrm{c}}$) up to $55\ \textrm{K}$ and thus hold the key to the elusive pairing mechanism. Recently, it has been demonstrated that the intrinsic electronic structure of SmFe$_{0.92}$Co$_{0.08}$AsO ($T_{\mathrm{c}}=18\ \textrm{K}$) is highly nontrivial and consists of multiple band-edge singularities in close proximity to the Fermi level. However, it remains unclear whether these singularities are generic to the $RE$FeAsO-type materials and if so, whether their exact topology is responsible for the aforementioned record $T_{\mathrm{c}}$. In this work, we use angle-resolved photoemission spectroscopy (ARPES) to investigate the inherent electronic structure of the NdFeAsO$_{0.6}$F$_{0.4}$ compound with a twice higher $T_{\mathrm{c}}=38\ \textrm{K}$. We find a similarly singular Fermi surface and further demonstrate that the dramatic enhancement of superconductivity in this compound correlates closely with the fine-tuning of one of the band-edge singularities to within a fraction of the superconducting energy gap $Δ$ below the Fermi level. Our results provide compelling evidence that the band-structure singularities near the Fermi level in the iron-based superconductors must be explicitly accounted for in any attempt to understand the mechanism of superconducting pairing in these materials. △ Less

Submitted 11 January, 2016; originally announced January 2016.

Comments: Open access article available online at http://www.nature.com/articles/srep18273

Journal ref: Sci. Rep. 5, 18273 (2015)

Pairing of weakly correlated electrons in the platinum-based centrosymmetric superconductor SrPt3P

Authors: T. Shiroka, M. Pikulski, N. D. Zhigadlo, B. Batlogg, J. Mesot, H. -R. Ott

Abstract: We report a study of the normal- and superconducting-state electronic properties of the centrosymmetric compound SrPt3P via 31P nuclear-magnetic-resonance (NMR) and magnetometry investigations. Essential features such as a sharp drop of the Knight shift at T < Tc and an exponential decrease of the NMR spin-lattice relaxation ratio 1/(T1T) below Tc are consistent with an s-wave electron pairing in… ▽ More We report a study of the normal- and superconducting-state electronic properties of the centrosymmetric compound SrPt3P via 31P nuclear-magnetic-resonance (NMR) and magnetometry investigations. Essential features such as a sharp drop of the Knight shift at T < Tc and an exponential decrease of the NMR spin-lattice relaxation ratio 1/(T1T) below Tc are consistent with an s-wave electron pairing in SrPt3P, although a direct confirmation in the form of a Hebel-Slichter-type peak is lacking. Normal-state NMR data at T < 50 K indicate conventional features of the conduction electrons, typical of simple metals such as lithium or silver. Our data are finally compared with available NMR results for the noncentrosymmetric superconductors LaPt$_3$Si and CePt$_3$Si, which adopt similar crystal structures. △ Less

Submitted 19 June, 2015; originally announced June 2015.

Comments: 7 pages, 8 figures

Journal ref: Phys. Rev. B 91, 245143 (2015)

Interaction-induced singular Fermi surface in a high-temperature oxypnictide superconductor

Authors: A. Charnukha, S. Thirupathaiah, V. B. Zabolotnyy, B. Büchner, N. D. Zhigadlo, B. Batlogg, A. N. Yaresko, S. V. Borisenko

Abstract: In the family of iron-based superconductors, LaFeAsO-type materials possess the simplest electronic structure due to their pronounced two-dimensionality. And yet they host superconductivity with the highest transition temperature Tc=55K. Early theoretical predictions of their electronic structure revealed multiple large circular portions of the Fermi surface with a very good geometrical overlap (n… ▽ More In the family of iron-based superconductors, LaFeAsO-type materials possess the simplest electronic structure due to their pronounced two-dimensionality. And yet they host superconductivity with the highest transition temperature Tc=55K. Early theoretical predictions of their electronic structure revealed multiple large circular portions of the Fermi surface with a very good geometrical overlap (nesting), believed to enhance the pairing interaction and thus superconductivity. The prevalence of such large circular features in the Fermi surface has since been associated with many other iron-based compounds and has grown to be generally accepted in the field. In this work we show that a prototypical compound of the 1111-type, SmFe0.92Co0.08AsO, is at odds with this description and possesses a distinctly different Fermi surface, which consists of two singular constructs formed by the edges of several bands, pulled to the Fermi level from the depths of the theoretically predicted band structure by strong electronic interactions. Such singularities dramatically affect the low-energy electronic properties of the material, including superconductivity. We further argue that occurrence of these singularities correlates with the maximum superconducting transition temperature attainable in each material class over the entire family of iron-based superconductors. △ Less

Submitted 22 May, 2015; originally announced May 2015.

Comments: Open access article available online at http://www.nature.com/srep/2015/150521/srep10392/full/srep10392.html

Journal ref: Sci. Rep. 5, 10392 (2015)

Epilogue: Superconducting Materials Past, Present and Future

Authors: C. W. Chu, P. C. Canfield, R. C. Dynes, Z. Fisk, B. Batlogg, G. Deutscher, T. H. Geballe, Z. X. Zhao, R. L. Greene, H. Hosono, M. B. Maple

Abstract: Experimental contributors to the field of Superconducting Materials share their informal views on the subject. Experimental contributors to the field of Superconducting Materials share their informal views on the subject. △ Less

Submitted 18 April, 2015; v1 submitted 9 April, 2015; originally announced April 2015.

Comments: Epilogue to Physica C Special Issue on Superconducting Materials, Volume 514 (2015)

Quantum oscillations of the superconductor LaRu$_2$P$_2$ : comparable mass enhancement $λ\approx 1$ in Ru and Fe phosphides

Authors: Philip J. W. Moll, Jakob Kanter, Ross D. McDonald, Fedor F. Balakirev, Peter Blaha, Karlheinz Schwarz, Zbigniew Bukowski, Nikolai D. Zhigadlo, Sergiy Katrych, Kurt Mattenberger, Janusz Karpinski, Bertram Batlogg

Abstract: We have studied the angular dependent de Haas-van Alphen oscillations of LaRu$_2$P$_2$ using magnetic torque in pulsed magnetic fields up to 60T. The observed oscillation frequencies are in excellent agreement with the geometry of the calculated Fermi surface. The temperature dependence of the oscillation amplitudes reveals effective masses m*($α$)=0.71 and m*($β$)=0.99 m$_e$, which are enhanced o… ▽ More We have studied the angular dependent de Haas-van Alphen oscillations of LaRu$_2$P$_2$ using magnetic torque in pulsed magnetic fields up to 60T. The observed oscillation frequencies are in excellent agreement with the geometry of the calculated Fermi surface. The temperature dependence of the oscillation amplitudes reveals effective masses m*($α$)=0.71 and m*($β$)=0.99 m$_e$, which are enhanced over the calculated band mass by $λ^{cyc}$ of 0.8. We find a similar enhancement $λ^γ \approx 1$ in comparing the measured electronic specific heat ($γ= 11.5$ mJ/mol K$^2$) with the total DOS from band structure calculations. Remarkably, very similar mass enhancements have been reported in other pnictides LaFe$_2$P$_2$, LaFePO ($T_c \approx 4K$), and LaRuPO, independent of whether they are superconducting or not. This is contrary to the common perceptions that the normal state quasi-particle renormalizations reflect the strength of the superconducting paring mechanism and leads to new questions about pairing in isostructural and isoelectronic Ru- and Fe-pnictide superconductors. △ Less

Submitted 28 October, 2014; originally announced October 2014.

Comments: 4 pages, 4 figures

Journal ref: Physical Review B 84, 224507 (2011)

Critical current oscillations in the intrinsic hybrid vortex state of SmFeAs(O,F)

Authors: Philip J. W. Moll, Luis Balicas, Xiyu Zhu, Hai-Hu Wen, Nikolai D. Zhigadlo, Janusz Karpinski, Bertram Batlogg

Abstract: In layered superconductors the order parameter may be modulated within the unit cell, leading to non-trivial modifications of the vortex core if the interlayer coherence length $ξ_c(T)$ is comparable to the interlayer distance. In the iron-pnictide SmFeAs(O,F) ($T_c \approx 50$K) this occurs below a cross-over temperature $T^\star \approx 41$K, which separates two regimes of vortices: anisotropic… ▽ More In layered superconductors the order parameter may be modulated within the unit cell, leading to non-trivial modifications of the vortex core if the interlayer coherence length $ξ_c(T)$ is comparable to the interlayer distance. In the iron-pnictide SmFeAs(O,F) ($T_c \approx 50$K) this occurs below a cross-over temperature $T^\star \approx 41$K, which separates two regimes of vortices: anisotropic Abrikosov-like at high and Josephson-like at low temperatures. Yet in the transition region around $T^\star$, hybrid vortices between these two characteristics appear. Only in this region around $T^\star$ and for magnetic fields well aligned with the FeAs layers, we observe oscillations of the c-axis critical current $j_c(H)$ periodic in $\frac{1}{\sqrt{H}}$ due to a delicate balance of intervortex forces and interaction with the layered potential. $j_c(H)$ shows pronounced maxima when a hexagonal vortex lattice is commensurate with the crystal structure. The narrow temperature window in which oscillations are observed suggests a significant suppression of the order parameter between the superconducting layers in SmFeAs(O,F), despite its low coherence length anisotropy ($γ_ξ\approx 3-5$). △ Less

Submitted 28 October, 2014; originally announced October 2014.

Comments: accepted for PRL

Intrinsic Josephson junctions in the iron-based multi-band superconductor (V2Sr4O6)Fe2As2

Authors: Philip J. W. Moll, Xiyu Zhu, Peng Cheng, Hai-Hu Wen, Bertram Batlogg

Abstract: In layered superconductors, Josephson junctions may be formed within the unit cell due to sufficiently low interlayer coupling. These intrinsic Josephson junction (iJJ) systems have attracted considerable interest for their application potential in quantum computing as well as efficient sources of THz radiation, closing the famous "THz gap". So far, iJJ have been demonstrated in single-band, coppe… ▽ More In layered superconductors, Josephson junctions may be formed within the unit cell due to sufficiently low interlayer coupling. These intrinsic Josephson junction (iJJ) systems have attracted considerable interest for their application potential in quantum computing as well as efficient sources of THz radiation, closing the famous "THz gap". So far, iJJ have been demonstrated in single-band, copper-based high-Tc superconductors, mainly in Ba-Sr-Ca-Cu-O. Here we report clear experimental evidence for iJJ behavior in the iron-based superconductor (V2Sr4O6)Fe2As2. The intrinsic junctions are identified by periodic oscillations of the flux flow voltage upon increasing a well aligned in-plane magnetic field. The periodicity is well explained by commensurability effects between the Josephson vortex lattice and the crystal structure, which is a hallmark signature of Josephson vortices confined into iJJ stacks. This finding adds (V2Sr4O6)Fe2As2 as the first iron-based, multi-band superconductor to the copper-based iJJ materials of interest for Josephson junction applications, and in particular novel devices based on multi-band Josephson coupling may be realized. △ Less

Submitted 22 May, 2014; originally announced May 2014.

Comments: Accepted in Nature Physics

Journal ref: Nature Physics 10, 644 (2014)

SrPt$_3$P: two-band single-gap superconductor

Authors: R. Khasanov, A. Amato, P. K. Biswas, H. Luetkens, N. D. Zhigadlo, B. Batlogg

Abstract: The magnetic penetration depth ($λ$) as a function of applied magnetic field and temperature in SrPt$_3$P($T_c\simeq8.4$ K) was studied by means of muon-spin rotation ($μ$SR). The dependence of $λ^{-2}$ on temperature suggests the existence of a single $s-$wave energy gap with the zero-temperature value $Δ=1.58(2)$ meV. At the same time $λ$ was found to be strongly field dependent which is the cha… ▽ More The magnetic penetration depth ($λ$) as a function of applied magnetic field and temperature in SrPt$_3$P($T_c\simeq8.4$ K) was studied by means of muon-spin rotation ($μ$SR). The dependence of $λ^{-2}$ on temperature suggests the existence of a single $s-$wave energy gap with the zero-temperature value $Δ=1.58(2)$ meV. At the same time $λ$ was found to be strongly field dependent which is the characteristic feature of the nodal gap and/or multi-gap systems. The multi-gap nature of the superconduicting state is further confirmed by observation of an upward curvature of the upper critical field. This apparent contradiction would be resolved with SrPt$_3$P being a two-band superconductor with equal gaps but different coherence lengths within the two Fermi surface sheets. △ Less

Submitted 22 April, 2014; originally announced April 2014.

Comments: 6 pages, 4 figures

Approaching the Trap-Free Limit in Organic Single Crystal Field-Effect Transistors

Authors: Balthasar Blülle, Roger Häusermann, Bertram Batlogg

Abstract: Crystalline organic semiconductors, bonded by weak van der Waals forces, exhibit macroscopic properties that are very similar to those of inorganic semiconductors. While there are many open questions concerning the microscopic nature of charge transport, minimizing the density of trap states (trap DOS) is crucial to elucidate the intrinsic transport mechanism. We explore the limits of state-of… ▽ More Crystalline organic semiconductors, bonded by weak van der Waals forces, exhibit macroscopic properties that are very similar to those of inorganic semiconductors. While there are many open questions concerning the microscopic nature of charge transport, minimizing the density of trap states (trap DOS) is crucial to elucidate the intrinsic transport mechanism. We explore the limits of state-of-the-art organic crystals by measuring single crystalline rubrene field-effect transistors that show textbook like transfer characteristics, indicating a very low trap DOS. Particularly, the high purity of the crystals and the very clean interface to the gate dielectric are reflected in an unprecedentedly low subthreshold swing of 65 ${\rm mV / decade}$, remarkably close to the fundamental limit of $58.5 {\rm mV / decade}$. From the measured subthreshold behavior we have consistently quantified the trap DOS by two different methods, yielding an exceedingly low trap density of $D_{bulk} = 1 \times 10^{13}~{\rm cm^{-3}eV^{-1}}$ at an energy of $\sim0.62~{\rm eV}$. These numbers correspond to one trap per eV in $10^8$ rubrene molecules. The equivalent density of traps located at the interface is $D_{it} = 3 \times 10^{9}~{\rm cm^{-2}eV^{-1}}$ which puts them on par with the best crystalline ${\rm SiO_2/Si}$ field-effect transistors. △ Less

Submitted 6 March, 2015; v1 submitted 8 January, 2014; originally announced January 2014.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. Applied 1, 034006 (2014)

Radiation induced electronic trap states and local structural disorder in van~der~Waals bonded semiconductor crystals

Authors: Tobias Morf, Tino Zimmerling, Simon Haas, Bertram Batlogg

Abstract: In controlled X-ray irradiation experiments, the formation of trap states in the prototypical van der Waals bonded semiconductor Rubrene is studied quantitatively for doses up to 82 Gy (Gy = J/kg). About 100 electronic trap states, located around 0.3 eV above the valence band, are created by each absorbed 8 keV photon which is 2-3 orders of magnitude more than 1 MeV protons produce. Thermal anneal… ▽ More In controlled X-ray irradiation experiments, the formation of trap states in the prototypical van der Waals bonded semiconductor Rubrene is studied quantitatively for doses up to 82 Gy (Gy = J/kg). About 100 electronic trap states, located around 0.3 eV above the valence band, are created by each absorbed 8 keV photon which is 2-3 orders of magnitude more than 1 MeV protons produce. Thermal annealing is shown to reduce these traps. Local structural disorder, which has also been induced by other means in different studies, is thus identified as a common origin of trap states in van der Waals bonded molecular organic semiconductors. △ Less

Submitted 13 May, 2016; v1 submitted 15 March, 2013; originally announced March 2013.

Comments: 5 pages, 4 figures; revised text implementing a referees feedback regarding the interpretation/conclusion

1D to 2D Na Ion Diffusion Inherently Linked to Structural Transitions in Na$_{0.7}$CoO$_{2}$

Authors: M. Medarde, M. Mena, J. L. Gavilano, E. Pomjakushina, J. Sugiyama, K. Kamazawa, V. Yu. Pomjakushin, D. Sheptyakov, B. Batlogg, H. R. Ott, M. Mansson, F. Juranyi

Abstract: We report the observation of a stepwise "melting" of the low-temperature Na-vacancy order in the layered transition metal oxide Na0.7CoO2. High-resolution neutron powder diffraction indicates the existence of two first-order structural transitions, one at T1 = 290 K, followed by a second at T2 = 400 K. Detailed analysis reveals that both transitions are linked to changes in the Na mobility. Our da… ▽ More We report the observation of a stepwise "melting" of the low-temperature Na-vacancy order in the layered transition metal oxide Na0.7CoO2. High-resolution neutron powder diffraction indicates the existence of two first-order structural transitions, one at T1 = 290 K, followed by a second at T2 = 400 K. Detailed analysis reveals that both transitions are linked to changes in the Na mobility. Our data are consistent with a two-step disappearance of Na-vacancy order through the successive opening of first quasi-1D (T1 > T > T2) and then 2D (T > T2) Na diffusion paths. These results shed new light on previous, seemingly incompatible, experimental interpretations regarding the relationship between Na-vacancy order and Na dynamics in this material. They also represent an important step towards the tuning of physical properties and the design of tailored functional materials through an improved control and understanding of ionic diffusion. △ Less

Submitted 13 June, 2013; v1 submitted 24 January, 2013; originally announced January 2013.

Comments: 5 pages, 4 figures, accepted by PRL

Journal ref: Phys. Rev. Lett. 110, 266401 (2013)

High-pressure flux growth, structural, and superconducting properties of LnFeAsO (Ln = Pr, Nd, Sm) single crystals

Authors: N. D. Zhigadlo, S. Weyeneth, S. Katrych, P. J. W. Moll, K. Rogacki, S. Bosma, R. Puzniak, J. Karpinski, B. Batlogg

Abstract: Single crystals of the LnFeAsO (Ln1111, Ln = Pr, Nd, and Sm) family with lateral dimensions up to 1 mm were grown from NaAs and KAs flux at high pressure. The crystals are of good structural quality and become superconducting when O is partially substituted by F (PrFeAsO1-xFx and NdFeAsO1-xFx) or when Fe is substituted by Co (SmFe1-xCoxAsO). From magnetization measurements, we estimate the tempera… ▽ More Single crystals of the LnFeAsO (Ln1111, Ln = Pr, Nd, and Sm) family with lateral dimensions up to 1 mm were grown from NaAs and KAs flux at high pressure. The crystals are of good structural quality and become superconducting when O is partially substituted by F (PrFeAsO1-xFx and NdFeAsO1-xFx) or when Fe is substituted by Co (SmFe1-xCoxAsO). From magnetization measurements, we estimate the temperature dependence and anisotropy of the upper critical field and the critical current density of underdoped PrFeAsO0.7F0.3 crystal with Tc = 25 K. Single crystals of SmFe1-xCoxAsO with maximal Tc up to 16.3 K for x = 0.08 were grown for the first time. From transport and magnetic measurements we estimate the critical fields and their anisotropy, and find these superconducting properties to be quite comparable to the ones in SmFeAsO1-xFx with a much higher Tc of = 50 K. The magnetically measured critical current densities are as high as 109 A/m2 at 2 K up to 7 T, with indication of the usual fishtail effect. The upper critical field estimated from resistivity measurements is anisotropic with slopes of -8.7 T/K (H // ab-plane) and -1.7 T/K (H // c-axis). This anisotropy (= 5) is similar to that in other Ln1111 crystals with various higher Tc s. △ Less

Submitted 8 January, 2013; v1 submitted 30 August, 2012; originally announced August 2012.

Comments: 37 pages, 13 figures, 1 table

Journal ref: Phys. Rev. B 86, 214509 (2012)

High-frequency gate manipulation of a bilayer graphene quantum dot

Authors: S. Dröscher, J. Güttinger, T. Mathis, B. Batlogg, T. Ihn, K. Ensslin

Abstract: We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the prese… ▽ More We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the presence of the capacitively coupled back gate. △ Less

Submitted 19 June, 2012; originally announced June 2012.

Journal ref: Appl. Phys. Lett. 101, 043107 (2012)

Interplay of composition, structure, magnetism, and superconductivity in SmFeAs1-xPxO1-y

Authors: N. D. Zhigadlo, S. Katrych, M. Bendele, P. J. W. Moll, M. Tortello, S. Weyeneth, V. Yu. Pomjakushin, J. Kanter, R. Puzniak, Z. Bukowski, H. Keller, R. S. Gonnelli, R. Khasanov, J. Karpinski, B. Batlogg

Abstract: Polycrystalline samples and single crystals of SmFeAs1-xPxO1-y were synthesized and grown employing different synthesis methods and annealing conditions. Depending on the phosphorus and oxygen content, the samples are either magnetic or superconducting. In the fully oxygenated compounds the main impact of phosphorus substitution is to suppress the Néel temperature TN of the spin density wave (SDW)… ▽ More Polycrystalline samples and single crystals of SmFeAs1-xPxO1-y were synthesized and grown employing different synthesis methods and annealing conditions. Depending on the phosphorus and oxygen content, the samples are either magnetic or superconducting. In the fully oxygenated compounds the main impact of phosphorus substitution is to suppress the Néel temperature TN of the spin density wave (SDW) state, and to strongly reduce the local magnetic field in the SDW state, as deduced from muon spin rotation measurements. On the other hand the superconducting state is observed in the oxygen deficient samples only after heat treatment under high pressure. Oxygen deficiency as a result of synthesis at high pressure brings the Sm-O layer closer to the superconducting As/P-Fe-As/P block and provides additional electron transfer. Interestingly, the structural modifications in response to this variation of the electron count are significantly different when phosphorus is partly substituting arsenic. Point contact spectra are well described with two superconducting gaps. Magnetic and resistance measurements on single crystals indicate an in-plane magnetic penetration depth of 200 nm and an anisotropy of the upper critical field slope of 4-5. PACS number(s): 74.70.Xa, 74.62.Bf, 74.25.-q, 81.20.-n △ Less

Submitted 28 July, 2011; originally announced July 2011.

Comments: 36 pages, 13 figures, 2 tables

Journal ref: Phys. Rev. B 84, 134526 (2011)

Gate Bias Stress in Pentacene Field-Effect-Transistors: Charge Trap** in the Dielectric or Semiconductor

Authors: Roger Häusermann, Bertram Batlogg

Abstract: Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge trap**. We study the role of the dielectric and the semiconductor separately by producing OFETs with the same semiconductor (pentacene) combined with different… ▽ More Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge trap**. We study the role of the dielectric and the semiconductor separately by producing OFETs with the same semiconductor (pentacene) combined with different dielectrics (SiO$_2$ and Cytop). We show, it is possible to fabricate devices which are immune to gate bias stress. For other material combinations, charge trap** occurs in the semiconductor alone, or in the dielectric. △ Less

Submitted 4 August, 2011; v1 submitted 23 June, 2011; originally announced June 2011.

Comments: 4 pages 3 figures

{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals

Authors: S. Weyeneth, P. J. W. Moll, R. Puzniak, K. Ninios, F. F. Balakirev, R. D. McDonald, H. B. Chan, N. D. Zhigadlo, S. Katrych, Z. Bukowski, J. Karpinski, H. Keller, B. Batlogg, L. Balicas

Abstract: The low-temperature antiferromagnetic state of the Sm-ions in both nonsuperconducting SmFeAsO and superconducting SmFeAsO$_{0.9}$F$_{0.1}$ single crystals was studied by magnetic torque, magnetization, and magnetoresistance measurements in magnetic fields up to 60~T and temperatures down to 0.6~K. We uncover in both compounds a distinct rearrangement of the antiferromagnetically ordered Sm-moments… ▽ More The low-temperature antiferromagnetic state of the Sm-ions in both nonsuperconducting SmFeAsO and superconducting SmFeAsO$_{0.9}$F$_{0.1}$ single crystals was studied by magnetic torque, magnetization, and magnetoresistance measurements in magnetic fields up to 60~T and temperatures down to 0.6~K. We uncover in both compounds a distinct rearrangement of the antiferromagnetically ordered Sm-moments near $35-40$~T. This is seen in both, static and pulsed magnetic fields, as a sharp change in the sign of the magnetic torque, which is sensitive to the magnetic anisotropy and hence to the magnetic moment in the $ab$-plane, ({\it i.e.} the FeAs-layers), and as a jump in the magnetization for magnetic fields perpendicular to the conducting planes. This rearrangement of magnetic ordering in $35-40$~T is essentially temperature independent and points towards a canted or a partially polarized magnetic state in high magnetic fields. However, the observed value for the saturation moment above this rearrangement, suggests that the complete suppression of the antiferromagnetism related to the Sm-moments would require fields in excess of 60~T. Such a large field value is particularly remarkable when compared to the relatively small Néel temperature $T_{\rm N}\simeq5$~K, suggesting very anisotropic magnetic exchange couplings. At the transition, magnetoresistivity measurements show a crossover from positive to negative field-dependence, indicating that the charge carriers in the FeAs planes are sensitive to the magnetic configuration of the rare-earth elements. This is indicates a finite magnetic/electronic coupling between the SmO and the FeAs layers which are likely to mediate the exchange interactions leading to the long range antiferromagnetic order of the Sm ions. △ Less

Submitted 16 February, 2011; originally announced February 2011.

Comments: 10 pages, 7 figures, accepted in Phys. Rev. B

Journal ref: Phys. Rev. B, 83, 134503 (2011)

Th substituted SmFeAsO: structural details and superconductivity with Tc above 50 K

Authors: N. D. Zhigadlo, S. Katrych, S. Weyeneth, R. Puzniak, P. Moll, Z. Bukowski, J. Karpinski, H. Keller, B. Batlogg

Abstract: Superconducting poly- and single-crystalline samples of Sm1-xThxFeAsO with partial substitution of Sm3+ by Th4+ were synthesized and grown under high pressure and their structural, magnetic and transport properties are studied. The superconducting Tc reaches values higher than 50 K. Bulk superconducting samples (x = 0.08, 0.15, 0.3) do not show any signs of a phase transition from tetragonal to or… ▽ More Superconducting poly- and single-crystalline samples of Sm1-xThxFeAsO with partial substitution of Sm3+ by Th4+ were synthesized and grown under high pressure and their structural, magnetic and transport properties are studied. The superconducting Tc reaches values higher than 50 K. Bulk superconducting samples (x = 0.08, 0.15, 0.3) do not show any signs of a phase transition from tetragonal to orthorhombic crystal structure at low temperatures. With Th substitution the unit cell parameters a and c shrink and the fractional atomic coordinate of the As site zAs remains almost unchanged, while that of Sm/Th zSm/Th increases. Upon warming from 5 K to 295 K the expansion of the FeAs layer thickness is dominant, while the changes in the other structural building blocks are smaller by a factor of 1/5, and they compensate each other, since the As-Sm/Th distance appears to contract by about the same amount as the O-Sm/Th expands. The poly- and single-crystalline samples are characterized by a full diamagnetic response in low magnetic field, by a high intergrain critical-current density for polycrystalline samples, and by a critical current density of the order of 8 x 105 A/cm2 for single crystals at 2 K in fields up to 7 T. The magnetic penetration depth anisotropy γλ increases with decreasing temperature, a similar behavior to that of SmFeAsO1-xFy single crystals. The upper critical field estimated from resistance measurements is anisotropic with slopes of 5.4 T/K (H//ab plane) and 2.7 T/K (H//c axis), at temperatures sufficiently far below Tc. The upper critical field anisotropy γH is in the range of 2, consistent with the tendency of a decreasing γH with decreasing temperature, already reported for SmFeAsO1-xFy single crystals. △ Less

Submitted 1 June, 2010; originally announced June 2010.

Comments: 30 pages, 2 tables, 15 figures

Journal ref: Phys. Rev. B 82, 064517 (2010)

Microscopic Study of the Superconducting State of the Iron Pnictide RbFe_2As_2

Authors: Z. Shermadini, J. Kanter, C. Baines, M. Bendele, Z. Bukowski, R. Khasanov, H. -H. Klauss, H. Luetkens, H. Maeter, G. Pascua, B. Batlogg, A. Amato

Abstract: A study of the temperature and field dependence of the penetration depth λof the superconductor RbFe_2As_2 (T_c=2.52 K) was carried out by means of muon-spin rotation measurements. In addition to the zero temperature value of the penetration depth λ(0)=267(5) nm, a determination of the upper critical field B_c2(0)=2.6(2) T was obtained. The temperature dependence of the superconducting carrier con… ▽ More A study of the temperature and field dependence of the penetration depth λof the superconductor RbFe_2As_2 (T_c=2.52 K) was carried out by means of muon-spin rotation measurements. In addition to the zero temperature value of the penetration depth λ(0)=267(5) nm, a determination of the upper critical field B_c2(0)=2.6(2) T was obtained. The temperature dependence of the superconducting carrier concentration is discussed within the framework of a multi-gap scenario. Compared to the other "122" systems which exhibit much higher Fermi level, a strong reduction of the large gap BCS ratio 2Δ/k_B T_c is observed. This is interpreted as a consequence of the absence of interband processes. Indications of possible pair-breaking effect are also discussed. △ Less

Submitted 28 May, 2010; v1 submitted 21 May, 2010; originally announced May 2010.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 82, 144527 (2010)

High magnetic field scales and critical currents in SmFeAs(O,F) crystals: promising for applications

Authors: Philip J. W. Moll, Roman Puzniak, Fedor Balakirev, Krzysztof Rogacki, Janusz Karpinski, Nikolai D. Zhigadlo, Bertram Batlogg

Abstract: Superconducting technology provides most sensitive field detectors, promising implementations of qubits and high field magnets for medical imaging and for most powerful particle accelerators. Thus, with the discovery of new superconducting materials, such as the iron pnictides, exploring their potential for applications is one of the foremost tasks. Even if the critical temperature Tc is high, int… ▽ More Superconducting technology provides most sensitive field detectors, promising implementations of qubits and high field magnets for medical imaging and for most powerful particle accelerators. Thus, with the discovery of new superconducting materials, such as the iron pnictides, exploring their potential for applications is one of the foremost tasks. Even if the critical temperature Tc is high, intrinsic electronic properties might render applications rather difficult, particularly if extreme electronic anisotropy prevents effective pinning of vortices and thus severely limits the critical current density, a problem well known for cuprates. While many questions concerning microscopic electronic properties of the iron pnictides have been successfully addressed and estimates point to a very high upper critical field, their application potential is less clarified. Thus we focus here on the critical currents, their anisotropy and the onset of electrical dissipation in high magnetic fields up to 65 T. Our detailed study of the transport properties of optimally doped SmFeAs(O,F) single crystals reveals a promising combination of high (>2 x 10^6 A/cm^2) and nearly isotropic critical current densities along all crystal directions. This favorable intragrain current transport in SmFeAs(O,F), which shows the highest Tc of 54 K at ambient pressure, is a crucial requirement for possible applications. Essential in these experiments are 4-probe measurements on Focused Ion Beam (FIB) cut single crystals with sub-μ\m^2 cross-section, with current along and perpendicular to the crystallographic c-axis and very good signal-to-noise ratio (SNR) in pulsed magnetic fields. The pinning forces have been characterized by scaling the magnetically measured "peak effect". △ Less

Submitted 12 August, 2010; v1 submitted 18 March, 2010; originally announced March 2010.

Journal ref: Nature Materials 10, Issue 8, pages 628 - 633 (2010)

The trap DOS in small molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

Authors: Wolfgang L. Kalb, Simon Haas, Cornelius Krellner, Thomas Mathis, Bertram Batlogg

Abstract: We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized states in the band gap (trap DOS) of small molecule organic semiconductors as derived from electrical characteristics of organic field-effect transistors or from… ▽ More We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized states in the band gap (trap DOS) of small molecule organic semiconductors as derived from electrical characteristics of organic field-effect transistors or from space-charge-limited-current measurements. This was done by comparing data from a large number of samples including thin-film transistors (TFT's), single crystal field-effect transistors (SC-FET's) and bulk samples. The compilation of all data strongly suggests that structural defects associated with grain boundaries are the main cause of "fast" hole traps in TFT's made with vacuum-evaporated pentacene. For high-performance transistors made with small molecule semiconductors such as rubrene it is essential to reduce the dipolar disorder caused by water adsorbed on the gate dielectric surface. In samples with very low trap densities, we sometimes observe a steep increase of the trap DOS very close (<0.15 eV) to the mobility edge with a characteristic slope of 10-20 meV. It is discussed to what degree band broadening due to the thermal fluctuation of the intermolecular transfer integral is reflected in this steep increase of the trap DOS. Moreover, we show that the trap DOS in TFT's with small molecule semiconductors is very similar to the trap DOS in hydrogenated amorphous silicon even though polycrystalline films of small molecules with van der Waals-type interaction on the one hand are compared with covalently bound amorphous silicon on the other hand. △ Less

Submitted 8 February, 2010; originally announced February 2010.

Comments: 13 pages, 9 figures, 4 tables

Influence of Mg deficiency in MgB2 single crystals on crystal structure and superconducting properties

Authors: N. D. Zhigadlo, S. Katrych, J. Karpinski, B. Batlogg, F. Bernardini, S. Massidda, R. Puzniak

Abstract: The effects of high-temperature vacuum-annealing induced Mg deficiency in MgB2 single crystals grown under high pressure were investigated. As the annealing temperature was increased from 800 to 975 C, the average Mg content in the MgB2 crystals systematically decreased, while Tc remains essentially unchanged and the superconducting transition slightly broadens from 0.55 K to 1.3 K. The reductio… ▽ More The effects of high-temperature vacuum-annealing induced Mg deficiency in MgB2 single crystals grown under high pressure were investigated. As the annealing temperature was increased from 800 to 975 C, the average Mg content in the MgB2 crystals systematically decreased, while Tc remains essentially unchanged and the superconducting transition slightly broadens from 0.55 K to 1.3 K. The reduction of the superconducting volume fraction was noticeable already after annealing at 875 C. Samples annealed at 975 C are partially decomposed and the Mg site occupancy is decreased to 0.92 from 0.98 in as-grown crystals. Annealing at 1000 C completely destroys superconductivity. X-ray diffraction analysis revealed that the main final product of decomposition is polycrystalline MgB4 and thus the decomposition reaction of MgB2 can be described as 2MgB2(s) = MgB4(s) + Mg(g). First-principles calculations of the Mg1-x(VMg)xB2 electronic structure, within the supercell approach, show a small downshift of the Fermi level. Holes induced by the vacancies go to both sigma and pi bands. These small modifications are not expected to influence Tc, in agreement with observations. The significant reduction of the superconducting volume fraction without noticeable Tc reduction indicates the coexistence, within the same crystal, of superconductive and non-superconductive electronic phases, associated with regions rich and poor in Mg vacancies. △ Less

Submitted 3 February, 2010; originally announced February 2010.

Comments: 21 pages, 1 table, 6 figures, PRB accepted

Journal ref: Phys. Rev. B 81, 054520 (2010)

Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods

Authors: Wolfgang L. Kalb, Bertram Batlogg

Abstract: The spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a pentacene-based thin-film transistor from measurements of the temperature dependence and gate-voltage dependence of the contact-corrected field-effect conductivity. Several analytical methods to calculate the trap DOS from the measured data were used to clarify, if the different methods lead to… ▽ More The spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a pentacene-based thin-film transistor from measurements of the temperature dependence and gate-voltage dependence of the contact-corrected field-effect conductivity. Several analytical methods to calculate the trap DOS from the measured data were used to clarify, if the different methods lead to comparable results. We also used computer simulations to further test the results from the analytical methods. Most methods predict a trap DOS close to the valence band edge that can be very well approximated by a single exponential function with a slope in the range of 50-60 meV and a trap density at the valence band edge of approx. 2x10E21 eV-1cm-3. Interestingly, the trap DOS is always slightly steeper than exponential. An important finding is that the choice of the method to calculate the trap DOS from the measured data can have a considerable effect on the final result. We identify two specific simplifying assumptions that lead to significant errors in the trap DOS. The temperature-dependence of the band mobility should generally not be neglected. Moreover, the assumption of a constant effective accumulation layer thickness leads to a significant underestimation of the slope of the trap DOS. △ Less

Submitted 21 December, 2009; originally announced December 2009.

Comments: 14 pages, 7 figures

Journal ref: Phys. Rev. B 81, 035327 (2010)

Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric

Authors: M. P. Walser, W. L. Kalb, T. Mathis, B. Batlogg

Abstract: We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor and an ultra-thin (<20 nm) and highly insulating single-layer fluoropolymer gate dielectric (Cytop). OFETs with PTCDI-C13 (N,N'-ditridecylperylene-3,4,9,10-te… ▽ More We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor and an ultra-thin (<20 nm) and highly insulating single-layer fluoropolymer gate dielectric (Cytop). OFETs with PTCDI-C13 (N,N'-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide) as semiconductor exhibit outstanding transistor characteristics: very low threshold voltage (0.2V), onset at 0V, steep subthreshold swing (0.1-0.2 V/decade), no hysteresis and excellent stability against gate bias stress. It is gratifying to notice that such small OFET operating voltages can be achieved with the relatively simple processing techniques employed in this study. △ Less

Submitted 6 November, 2009; originally announced November 2009.

Comments: Accepted for publication in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 95, 233301 (2009)

Bulk Superconductivity at 2.6 K in Undoped RbFe_2As_2

Authors: Z. Bukowski, S. Weyeneth, R. Puzniak, J. Karpinski, B. Batlogg

Abstract: The iron arsenide RbFe_2As_2 with the ThCr_2Si_2-type structure is found to be a bulk superconductor with T_c=2.6 K. The onset of diamagnetism was used to estimate the upper critical field H_c2(T), resulting in dH_c2/dT=-1.4 T/K and an extrapolated H_c2(0)=2.5 T. As a new representative of iron pnictide superconductors, superconducting RbFe_2As_2 contrasts with BaFe_2As_2, where the Fermi level… ▽ More The iron arsenide RbFe_2As_2 with the ThCr_2Si_2-type structure is found to be a bulk superconductor with T_c=2.6 K. The onset of diamagnetism was used to estimate the upper critical field H_c2(T), resulting in dH_c2/dT=-1.4 T/K and an extrapolated H_c2(0)=2.5 T. As a new representative of iron pnictide superconductors, superconducting RbFe_2As_2 contrasts with BaFe_2As_2, where the Fermi level is higher and a magnetic instability is observed. Thus, the solid solution series (Rb,Ba)Fe_2As_2 is a promising system to study the crossover from superconductivity to magnetism. △ Less

Submitted 15 September, 2009; originally announced September 2009.

Comments: 2 pages, 3 figures Submitted for proceedings M2S-IX Tokyo 2009

Journal ref: Physica C 470, S328 (2010)

Superconductivity at 23 K and Low Anisotropy in Rb-Substituted BaFe_2As_2 Single Crystals

Authors: Z. Bukowski, S. Weyeneth, R. Puzniak, P. Moll, S. Katrych, N. D. Zhigadlo, J. Karpinski, H. Keller, B. Batlogg

Abstract: Single crystals of Ba_{1-x}Rb_{x}Fe_2As_2 with x=0.05-0.1 have been grown from Sn flux and are bulk superconductors with T_c up to 23 K. The crystal structure was determined by X-ray diffraction analysis, and Sn is found to be incorporated for 9% Ba, shifted by 1.1 Angstroem away from the Ba site towards the (Fe_2As_2)-layers. The upper critical field deduced from resistance measurements is anis… ▽ More Single crystals of Ba_{1-x}Rb_{x}Fe_2As_2 with x=0.05-0.1 have been grown from Sn flux and are bulk superconductors with T_c up to 23 K. The crystal structure was determined by X-ray diffraction analysis, and Sn is found to be incorporated for 9% Ba, shifted by 1.1 Angstroem away from the Ba site towards the (Fe_2As_2)-layers. The upper critical field deduced from resistance measurements is anisotropic with slopes of 7.1(3) T/K (H || ab-plane) and 4.2(2) T/K (H || c-axis), sufficiently far below T_c. The extracted upper critical field anisotropy of 3 close to T_c, is in good agreement with the estimate from magnetic torque measurements. This indicates that the electronic properties in the doped BaFe_2As_2 compound are significantly more isotropic than those in the LnFeAsO family. The in-plane critical current density at 5 K exceeds 10^6 A/cm^2, making Ba_{1-x}Rb_xFe_2As_2 a promising candidate for technical applications. △ Less

Submitted 24 March, 2009; v1 submitted 27 February, 2009; originally announced March 2009.

Comments: accepted for publication in Phys. Rev. B (9 pages, 11 figures)

Journal ref: Phys. Rev. B 79, 104521 (2009)

Single crystals of LnFeAsO1-xFx (Ln=La, Pr, Nd, Sm, Gd) and Ba1-xRbxFe2As2: growth, structure and superconducting properties

Authors: J. Karpinski, N. D. Zhigadlo, S. Katrych, Z. Bukowski, P. Moll, S. Weyeneth, H. Keller, R. Puzniak, M. Tortello, D. Daghero, R. Gonnelli, I. Maggio-Aprile, Y. Fasano, O. Fischer, B. Batlogg

Abstract: A review of our investigations on single crystals of LnFeAsO1-xFx (Ln=La, Pr, Nd, Sm, Gd) and Ba1-xRbxFe2As2 is presented. A high pressure technique has been applied for the growth of LnFeAsO1-xFx crystals, while Ba1-xRbxFe2As2 crystals were grown using quartz ampoule method. Single crystals were used for electrical transport, structure, magnetic torque and spectroscopic studies. Investigations… ▽ More A review of our investigations on single crystals of LnFeAsO1-xFx (Ln=La, Pr, Nd, Sm, Gd) and Ba1-xRbxFe2As2 is presented. A high pressure technique has been applied for the growth of LnFeAsO1-xFx crystals, while Ba1-xRbxFe2As2 crystals were grown using quartz ampoule method. Single crystals were used for electrical transport, structure, magnetic torque and spectroscopic studies. Investigations of the crystal structure confirmed high structural perfection and show less than full occupation of the (O, F) position in superconducting LnFeAsO1-xFx crystals. Resistivity measurements on LnFeAsO1-xFx crystals show a significant broadening of the transition in high magnetic fields, whereas the resistive transition in Ba1 xRbxFe2As2 simply shifts to lower temperature. Critical current density for both compounds is relatively high and exceeds 2x109 A/m2 at 15 K in 7 T. The anisotropy of magnetic penetration depth, measured on LnFeAsO1-xFx crystals by torque magnetometry is temperature dependent and apparently larger than the anisotropy of the upper critical field. Ba1-xRbxFe2As2 crystals are electronically significantly less anisotropic. Point-Contact Andreev-Reflection spectroscopy indicates the existence of two energy gaps in LnFeAsO1-xFx. Scanning Tunneling Spectroscopy reveals in addition to a superconducting gap, also some feature at high energy (~20 meV). △ Less

Submitted 11 February, 2009; v1 submitted 2 February, 2009; originally announced February 2009.

Comments: 27 pages, 19 figures, 2 tables, accepted to the special issue of the Physica C on superconducting pnictides

Journal ref: Physica C 469 (2009) 370-380

Spin fluctuations, magnetic long-range order and Fermi surface gap** in NaxCoO2

Authors: T. F. Schulze, M. Bruehwiler, P. S. Haefliger, S. M. Kazakov, Ch. Niedermayer, K. Mattenberger, J. Karpinski, B. Batlogg

Abstract: In this study an extended low energy phase diagram for NaxCoO2 is experimentally established with emphasis on the high x range. It is based on systematic heat capacity studies on both polycrystalline and single crystalline samples and on uSR measurements. Main features are the existence of mass enhancement, spin fluctuations without long-range order, and magnetic order with associated Fermi surf… ▽ More In this study an extended low energy phase diagram for NaxCoO2 is experimentally established with emphasis on the high x range. It is based on systematic heat capacity studies on both polycrystalline and single crystalline samples and on uSR measurements. Main features are the existence of mass enhancement, spin fluctuations without long-range order, and magnetic order with associated Fermi surface gap**. The latter is seen in the electronic density of states (DOS) and suppression of nuclear specific heat. While there is agreement between the band structure and the low energy DOS in the low x range, in the high x range (x > 0.6) the thermodynamically determined DOS is approximately three times that deduced from the angle-resolved photoemission spectroscopy (ARPES)-measured band dispersion or local-density approximation (LDA) calculations. △ Less

Submitted 12 August, 2008; originally announced August 2008.

Comments: 9 pages, 5 figures

Oxygen-related traps in pentacene thin films: Energetic position and implications for transistor performance

Authors: Wolfgang L. Kalb, Kurt Mattenberger, Bertram Batlogg

Abstract: We studied the influence of oxygen on the electronic trap states in a pentacene thin film. This was done by carrying out gated four-terminal measurements on thin-film transistors as a function of temperature and without ever exposing the samples to ambient air. Photooxidation of pentacene is shown to lead to a peak of trap states centered at 0.28 eV from the mobility edge, with trap densities of… ▽ More We studied the influence of oxygen on the electronic trap states in a pentacene thin film. This was done by carrying out gated four-terminal measurements on thin-film transistors as a function of temperature and without ever exposing the samples to ambient air. Photooxidation of pentacene is shown to lead to a peak of trap states centered at 0.28 eV from the mobility edge, with trap densities of the order of 10(18) cm(-3). These trap states need to be occupied at first and cause a reduction in the number of free carriers, i.e. a consistent shift of the density of free holes as a function of gate voltage. Moreover, the exposure to oxygen reduces the mobility of the charge carriers above the mobility edge. We correlate the change of these transport parameters with the change of the essential device parameters, i.e. subthreshold performance and effective field-effect mobility. This study supports the assumption of a mobility edge for charge transport, and contributes to a detailed understanding of an important degradation mechanism of organic field-effect transistors. Deep traps in an organic field-effect transistor reduce the effective field-effect mobility by reducing the number of free carriers and their mobility above the mobility edge. △ Less

Submitted 18 July, 2008; originally announced July 2008.

Comments: 13 pages, 14 figures, to be published in Phys. Rev. B

Journal ref: Phys. Rev. B 78, 035334 (2008)

Melting of the Na layers in solid Na0.8CoO2

Authors: M. Weller, A. Sacchetti, H. R. Ott, K. Mattenberger, B. Batlogg

Abstract: Data of 23Na NMR spectra- and relaxation measurements are interpreted as suggesting that, upon increasing temperature the Na layers in Na0.8CoO2 adopt a 2D liquid state at T=291 K. The corresponding first order phase transition is preceded by a rapidly increasing mobility and diffusion of Na ions above 200K. Above 291 K the 23Na NMR response is similar to that previously observed in superionic c… ▽ More Data of 23Na NMR spectra- and relaxation measurements are interpreted as suggesting that, upon increasing temperature the Na layers in Na0.8CoO2 adopt a 2D liquid state at T=291 K. The corresponding first order phase transition is preceded by a rapidly increasing mobility and diffusion of Na ions above 200K. Above 291 K the 23Na NMR response is similar to that previously observed in superionic conductors with planar Na layers. △ Less

Submitted 9 January, 2009; v1 submitted 3 June, 2008; originally announced June 2008.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 102, 056401 (2009)

Defect healing at room temperature in pentacene thin films and improved transistor performance

Authors: Wolfgang L. Kalb, Fabian Meier, Kurt Mattenberger, Bertram Batlogg

Abstract: We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene thin-film transistors were fabricated and characterized by in situ gated four-terminal measurements. Under high vacuum conditions (base pressure of order 10E-8… ▽ More We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene thin-film transistors were fabricated and characterized by in situ gated four-terminal measurements. Under high vacuum conditions (base pressure of order 10E-8 mbar), the device performance is found to improve with time. The effective field-effect mobility increases by as much as a factor of two and mobilities up to 0.45 cm2/Vs were achieved. In addition, the contact resistance decreases by more than an order of magnitude and there is a significant reduction in current hysteresis. Oxygen/nitrogen exposure and annealing experiments show the improvement of the electronic parameters to be driven by a thermally promoted process and not by chemical do**. In order to extract the spectral density of trap states from the transistor characteristics, we have implemented a powerful scheme which allows for a calculation of the trap densities with high accuracy in a straightforward fashion. We show the performance improvement to be due to a reduction in the density of shallow traps <0.15 eV from the valence band edge, while the energetically deeper traps are essentially unaffected. This work contributes to an understanding of the shallow traps in organic semiconductors and identifies structural point defects within the grains of the polycrystalline thin films as a major cause. △ Less

Submitted 9 November, 2007; originally announced November 2007.

Comments: 13 pages, 13 figures, to be published in Phys. Rev. B

Journal ref: Phys. Rev. B 76, 184112 (2007)

Direct link between low temperature magnetism and high temperature sodium order in NaxCoO2

Authors: T. F. Schulze, P. S. Häfliger, C. Niedermayer, K. Mattenberger, S. Bubenhofer, B. Batlogg

Abstract: We prove the direct link between low temperature magnetism and high temperature sodium ordering in NaxCoO2 using the example of a heretofore unreported magnetic transition at 8 K which involves a weak ferromagnetic moment. The 8 K feature is characterized in detail and its dependence on a diffusive sodium rearrangement around 200 K is demonstrated. Applying muons as local probes this process is… ▽ More We prove the direct link between low temperature magnetism and high temperature sodium ordering in NaxCoO2 using the example of a heretofore unreported magnetic transition at 8 K which involves a weak ferromagnetic moment. The 8 K feature is characterized in detail and its dependence on a diffusive sodium rearrangement around 200 K is demonstrated. Applying muons as local probes this process is shown to result in a reversible phase separation into distinct magnetic phases that can be controlled by specific cooling protocols. Thus the impact of ordered sodium Coulomb potential on the CoO2 physics is evidenced opening new ways to experimentally revisit the NaxCoO2 phase diagram. △ Less

Submitted 22 November, 2007; v1 submitted 11 July, 2007; originally announced July 2007.

Comments: 4 pages, 4 figures, to appear in PRL

High charge-carrier mobility and low trap density in a rubrene derivative

Authors: S. Haas, A. F. Stassen, G. Schuck, K. P. Pernstich, D. J. Gundlach, B. Batlogg, U. Berens, H. -J. Kirner

Abstract: We have synthesized, crystallized and studied the structural and electric transport properties of organic molecular crystals based on a rubrene derivative with {\em t}-butyl sidegroups at the 5,11 positions. Two crystalline modifications are observed: one (A) distinct from that of rubrene with larger spacings between the naphtacene backbones, the other (B) with a in-plane structure presumably ve… ▽ More We have synthesized, crystallized and studied the structural and electric transport properties of organic molecular crystals based on a rubrene derivative with {\em t}-butyl sidegroups at the 5,11 positions. Two crystalline modifications are observed: one (A) distinct from that of rubrene with larger spacings between the naphtacene backbones, the other (B) with a in-plane structure presumably very similar compared to rubrene. The electric transport properties reflect the different structures: in the latter phase (B) the in-plane hole mobility of 12 cm$^2$/Vs measured on single crystal FETs is just as high as in rubrene crystals, while in the A phase no field-effect could be measured. The high crystal quality, studied in detail for B, reflects itself in the density of gap states: The deep-level trap density as low as $10^{15}$ cm$^{-3}$ eV$^{-1}$ has been measured, and an exponential band tail with a characteristic energy of 22 meV is observed. The bulk mobility perpendicular to the molecular planes is estimated to be of order of $10^{-3}$ -- $10^{-1}$ cm$^2$/Vs. △ Less

Submitted 3 July, 2007; originally announced July 2007.

Journal ref: Phys. Rev. B 76, 115203 (2007)

Large Negative Thermal Expansion in Pentacene due to Steric Hindrance

Authors: S. Haas, B. Batlogg, C. Besnard, M. Schiltz, C. Kloc, T. Siegrist

Abstract: The uniaxial negative thermal expansion in pentacene crystals along $a$ is a particularity in the series of the oligoacenes, and exeptionally large for a crystalline solid. Full x-ray structure analysis from 120 K to 413 K reveals that the dominant thermal motion is a libration of the rigid molecules about their long axes, modifying the intermolecular angle which describes the herringbone packin… ▽ More The uniaxial negative thermal expansion in pentacene crystals along $a$ is a particularity in the series of the oligoacenes, and exeptionally large for a crystalline solid. Full x-ray structure analysis from 120 K to 413 K reveals that the dominant thermal motion is a libration of the rigid molecules about their long axes, modifying the intermolecular angle which describes the herringbone packing within the layers. This herringbone angle increases with temperature (by 0.3 -- 0.6$^{\circ}$ per 100 K), and causes an anisotropic rearrangement of the molecules within the layers, i.e. an expansion in the $b$ direction, and a distinct contraction along $a$. Additionally, a larger herringbone angle improves the cofacial overlap between adjacent, parallel molecules, and thus enhances the attractive van der Waals forces. △ Less

Submitted 3 July, 2007; originally announced July 2007.

Journal ref: Phys. Rev. B 76, 205203 (2007)

MgB2 single crystals substituted with Li and with Li-C: Structural and superconducting properties

Authors: J. Karpinski, N. Zhigadlo, S. Katrych, B. Batlogg, M. Tortello, K. Rogacki, R. Puzniak

Abstract: The effect of Li substitution for Mg and of Li-C co-substitution on the superconducting properties and crystal structure of MgB2 single crystals has been investigated. It has been found that hole do** with Li decreases the superconducting transition temperature Tc, but at a slower rate than electron do** with C or Al. Tc of MgB2 crystals with simultaneously substituted Li for Mg and C for B… ▽ More The effect of Li substitution for Mg and of Li-C co-substitution on the superconducting properties and crystal structure of MgB2 single crystals has been investigated. It has been found that hole do** with Li decreases the superconducting transition temperature Tc, but at a slower rate than electron do** with C or Al. Tc of MgB2 crystals with simultaneously substituted Li for Mg and C for B decreases more than in the case where C is substituted alone. This means that holes introduced by Li cannot counterbalance the effect of decrease of Tc caused by introduction of electrons coming from C. The possible reason of it can be that holes coming from Li occupy the pi band while electrons coming from C fill the sigma band. The temperature dependences of the upper critical field Hc2 for Al and Li substituted crystals with the same Tc show a similar dHc2/dT slope at Tc and a similar Hc2(T) behavior, despite of much different substitution level. This indicates that the mechanism controlling Hc2 and Tc is similar in both hole and electron doped crystals. Electrical transport measurements show an increase of resistivity both in Li substituted crystals and in Li and C co-substituted crystals. This indicates enhanced scattering due to defects introduced by substitutions including distortion of the lattice. The observed behavior can be explained as a result of two effects, influencing both Tc and Hc2. The first one is do** related to the changes in the carrier concentration, which may lead to the decrease or to the increase of Tc. The second one is related to the introduction of new scattering centers leading to the modification of the interband and/or intraband scattering and therefore, to changes in the superconducting gaps and to the reduction of Tc. △ Less

Submitted 26 April, 2007; originally announced April 2007.

Comments: 22 pages, 17 figures, submitted to PRB

Journal ref: Phys. Rev. B 77, 214507 (2008)

Density of bulk trap states in organic semiconductor crystals: discrete levels induced by oxygen in rubrene

Authors: C. Krellner, S. Haas, C. Goldmann, K. P. Pernstich, D. J. Gundlach, B. Batlogg

Abstract: The density of trap states in the bandgap of semiconducting organic single crystals has been measured quantitatively and with high energy resolution by means of the experimental method of temperature-dependent space-charge-limited-current spectroscopy (TD-SCLC). This spectroscopy has been applied to study bulk rubrene single crystals, which are shown by this technique to be of high chemical and… ▽ More The density of trap states in the bandgap of semiconducting organic single crystals has been measured quantitatively and with high energy resolution by means of the experimental method of temperature-dependent space-charge-limited-current spectroscopy (TD-SCLC). This spectroscopy has been applied to study bulk rubrene single crystals, which are shown by this technique to be of high chemical and structural quality. A density of deep trap states as low as ~ 10^{15} cm^{-3} is measured in the purest crystals, and the exponentially varying shallow trap density near the band edge could be identified (1 decade in the density of states per ~25 meV). Furthermore, we have induced and spectroscopically identified an oxygen related sharp hole bulk trap state at 0.27 eV above the valence band. △ Less

Submitted 19 June, 2007; v1 submitted 24 April, 2007; originally announced April 2007.

Comments: published in Phys. Rev. B, high quality figures: http://www.cpfs.mpg.de/~krellner/

Journal ref: Phys. Rev. B 75, 245115 (2007)

Organic small molecule field-effect transistors with Cytop(TM) gate dielectric: eliminating gate bias stress effects

Authors: Wolfgang L. Kalb, Thomas Mathis, Simon Haas, Arno F. Stassen, Bertram Batlogg

Abstract: We report on organic field-effect transistors with unprecedented resistance against gate bias stress. The single crystal and thin-film transistors employ the organic gate dielectric Cytop(TM). This fluoropolymer is highly water repellent and shows a remarkable electrical breakdown strength. The single crystal transistors are consistently of very high electrical quality: near zero onset, very ste… ▽ More We report on organic field-effect transistors with unprecedented resistance against gate bias stress. The single crystal and thin-film transistors employ the organic gate dielectric Cytop(TM). This fluoropolymer is highly water repellent and shows a remarkable electrical breakdown strength. The single crystal transistors are consistently of very high electrical quality: near zero onset, very steep subthreshold swing (average: 1.3 nF V/(dec cm2)) and negligible current hysteresis. Furthermore, extended gate bias stress only leads to marginal changes in the transfer characteristics. It appears that there is no conceptual limitation for the stability of organic semiconductors in contrast to hydrogenated amorphous silicon. △ Less

Submitted 20 February, 2007; originally announced February 2007.

Comments: 4 pages, 3 figures, to be published in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 90, 092104 (2007)

Mass enhancement, correlations, and strong coupling superconductivity in the beta-pyrochlore KOs2O6

Authors: M. Brühwiler, S. M. Kazakov, J. Karpinski, B. Batlogg

Abstract: To assess electron correlation and electron-phonon coupling in the recently discovered beta-pyrochlores KOs2O6 and RbOs2O6, we have performed specific heat measurements in magnetic fields up to 14 T. We present data from high quality single crystalline KOs2O6, showing that KOs2O6 is a strong coupling superconductor with a coupling parameter lambda_ep \approx 1.0 to 1.6 (RbOs2O6: lambda_ep \appro… ▽ More To assess electron correlation and electron-phonon coupling in the recently discovered beta-pyrochlores KOs2O6 and RbOs2O6, we have performed specific heat measurements in magnetic fields up to 14 T. We present data from high quality single crystalline KOs2O6, showing that KOs2O6 is a strong coupling superconductor with a coupling parameter lambda_ep \approx 1.0 to 1.6 (RbOs2O6: lambda_ep \approx 1). The estimated Sommerfeld coefficient of KOs2O6, gamma=76 to 110 mJ/(mol K^2), is twice that of RbOs2O6 [gamma=44 mJ/(mol K^2)]. Using strong-coupling corrections, we extract useful thermodynamic parameters of KOs2O6. Quantifying lambda_ep allows us to determine the mass enhancement over the calculated band electronic density of states. A significant contribution in addition to the electron-phonon term of lambda_c=1.7 to 4.3 is deduced. In an effort to understand the origin of the enhancement mechanism, we also investigate an unusual energetically low-lying phonon. There are three phonon modes per RbOs2O6, suggestive of the phonon source being the rattling motion of the alkali ion. This dynamic instability of the alkali ions causes large scattering of the charge carriers which shows up in an unusual temperature dependence of the electrical resistivity. △ Less

Submitted 24 February, 2006; originally announced February 2006.

Comments: Accepted for publication in PRB

Journal ref: Phys. Rev. B 73, 094518 (2006) [http://link.aps.org/abstract/PRB/v73/e094518]

Large mass enhancement in RbOs2O6

Authors: M. Brühwiler, S. M. Kazakov, J. Karpinski, B. Batlogg

Abstract: Heat capacity measurements on the recently discovered geometrically frustrated beta-pyrochlore superconductor RbOs2O6 (Tc=6.4 K) yield a Sommerfeld coefficient of 44 mJ/(molf.u. K^2). This is about 4 times larger than the one found in band structure calculations. In order to specify the enhancement due to electron-electron interactions, we have measured the electron-phonon enhancement. By a suit… ▽ More Heat capacity measurements on the recently discovered geometrically frustrated beta-pyrochlore superconductor RbOs2O6 (Tc=6.4 K) yield a Sommerfeld coefficient of 44 mJ/(molf.u. K^2). This is about 4 times larger than the one found in band structure calculations. In order to specify the enhancement due to electron-electron interactions, we have measured the electron-phonon enhancement. By a suitable analysis, an electron-phonon coupling constant lambda_ep = 1 +/- 0.1 is derived from the specific heat jump at Tc. This leaves a significant additional lambda_add = 2.1 +/- 0.3 for enhancement due to other mechanisms, possibly related to the triangular lattice. To arrive at these results, an appropriate analysis method for bulk thermodynamic data based on the condensation energy was applied. △ Less

Submitted 25 January, 2006; originally announced January 2006.

Comments: Accepted in Physica B

NaxCoO2: Enhanced low-energy excitations of electrons on a 2D triangular lattice

Authors: M. Brühwiler, B. Batlogg, S. M. Kazakov, Ch. Niedermayer, J. Karpinski

Abstract: To elucidate the low-energy excitation spectrum of correlated electrons on a 2D triangular lattice, we have studied the electrical resistance and specific heat down to 0.5 K and in magnetic fields up to 14 T, in NaxCoO2 samples with a Na content ranging from x \approx 0.5 to 0.82. Two distinct regimes are observed: for x from about 0.6 to x \approx 0.75 the specific heat is strongly enhanced, wi… ▽ More To elucidate the low-energy excitation spectrum of correlated electrons on a 2D triangular lattice, we have studied the electrical resistance and specific heat down to 0.5 K and in magnetic fields up to 14 T, in NaxCoO2 samples with a Na content ranging from x \approx 0.5 to 0.82. Two distinct regimes are observed: for x from about 0.6 to x \approx 0.75 the specific heat is strongly enhanced, with a pronounced upturn of C/T below about 10 K, reaching 47 mJ/(mol K^2). This enhancement is suppressed in a magnetic field indicative of strong low-energy spin fluctuations. At higher Na content the fluctuations are reduced and mu-SR data confirm the SDW ground state below 22 K and the much reduced heat capacity is field independent. △ Less

Submitted 25 January, 2006; originally announced January 2006.

Comments: Accepted in Physica B

Strong magnetic pair breaking in Mn substituted MgB_2 single crystals

Authors: K. Rogacki, B. Batlogg, J. Karpinski, N. D. Zhigadlo, G. Schuck, S. M. Kazakov, P. Wagli, R. Puzniak, A. Wisniewski, F. Carbone, A. Brinkman, D. van der Marel

Abstract: Magnetic ions (Mn) were substituted in MgB_2 single crystals resulting in a strong pair-breaking effect. The superconducting transition temperature, T_c, in Mg_{1-x}Mn_xB_2 has been found to be rapidly suppressed at an initial rate of 10 K/%Mn, leading to a complete suppression of superconductivity at about 2% Mn substitution. This reflects the strong coupling between the conduction electrons an… ▽ More Magnetic ions (Mn) were substituted in MgB_2 single crystals resulting in a strong pair-breaking effect. The superconducting transition temperature, T_c, in Mg_{1-x}Mn_xB_2 has been found to be rapidly suppressed at an initial rate of 10 K/%Mn, leading to a complete suppression of superconductivity at about 2% Mn substitution. This reflects the strong coupling between the conduction electrons and the 3d local moments, predominantly of magnetic character, since the nonmagnetic ion substitutions, e.g. with Al or C, suppress T_c much less effectively (e.g. 0.5 K/%Al). The magnitude of the magnetic moment, derived from normal state susceptibility measurements, uniquely identifies the Mn ions to be divalent, and to be in the low-spin state (S = 1/2). This has been found also in X-ray absorption spectroscopy measurements. Isovalent Mn^{2+} substitution for Mg^{2+} mainly affects superconductivity through spin-flip scattering reducing T_c rapidly and lowering the upper critical field anisotropy H_{c2}^{ab}/H_{c2}^c at T = 0 from 6 to 3.3 (x = 0.88% Mn), while leaving the initial slope dH_{c2}/dT near T_c unchanged for both field orientations. △ Less

Submitted 24 October, 2005; v1 submitted 10 October, 2005; originally announced October 2005.

Comments: 9 pages, 9 figures

Journal ref: Phys. Rev. B 73, 174520 (2006)

Evidence of Water-related Discrete Trap State Formation in Pentacene Single Crystal Field-Effect Transistors

Authors: C. Goldmann, D. J. Gundlach, B. Batlogg

Abstract: We report on the generation of a discrete trap state during negative gate bias stress in pentacene single crystal "flip-crystal" field-effect transistors with a SiO2 gate dielectric. Trap densities of up to 2*10^12 cm^-2 were created in the experiments. Trap formation and trap relaxation are distinctly different above and below ~280 K. In devices in which a self-assembled monolayer on top of the… ▽ More We report on the generation of a discrete trap state during negative gate bias stress in pentacene single crystal "flip-crystal" field-effect transistors with a SiO2 gate dielectric. Trap densities of up to 2*10^12 cm^-2 were created in the experiments. Trap formation and trap relaxation are distinctly different above and below ~280 K. In devices in which a self-assembled monolayer on top of the SiO2 provides a hydrophobic insulator surface we do not observe trap formation. These results indicate the microscopic cause of the trap state to be water adsorbed on the SiO2 surface. △ Less

Submitted 25 November, 2005; v1 submitted 25 August, 2005; originally announced August 2005.

Comments: 13 pages, 4 figures, submitted to Applied Physics Letters

Intrinsic thermodynamic properties of the pyrochlore superconductor RbOs2O6 extracted by condensation energy analysis

Authors: M. Brühwiler, S. M. Kazakov, J. Karpinski, B. Batlogg

Abstract: We develop a general procedure for the analysis of bulk thermodynamic data of a superconductor for samples containing a metallic non-superconducting second phase. The method is based on the condensation energy and it allows the extraction of the intrinsic properties of a superconductor even for non-ideal samples. Applying this procedure to the recently discovered geometrically frustrated beta-py… ▽ More We develop a general procedure for the analysis of bulk thermodynamic data of a superconductor for samples containing a metallic non-superconducting second phase. The method is based on the condensation energy and it allows the extraction of the intrinsic properties of a superconductor even for non-ideal samples. Applying this procedure to the recently discovered geometrically frustrated beta-pyrochlore superconductor RbOs2O6 (Tc = 6.4 K) yields a Sommerfeld coefficient as high as 79 mu J/g/K^2 (44 mJ/mol_f.u./K^2). RbOs2O6 is inferred to be a strong type-II superconductor (kappa(Tc) = 23) in the intermediate-coupling regime similar to niobium (lambda_ep \approx 1). From the upper critical field mu_0 H_c2 \approx 6 T at 0 K, we estimate a Ginzburg-Landau coherence length xi \approx 74 AA. The condensation energy is 860 mu J/g (483 mJ/mol_f.u.) resulting in 1/(8 pi) (gamma_1 Tc^2)/DeltaU_1 \approx 0.15, a value well in the range of conventional phonon-mediated superconductors. The superconducting electronic specific heat indicates conventional s-wave pairing. The experimental Sommerfeld coefficient of 44 mJ/mol_f.u./K^2 is about 4 times larger than the one found in band structure calculations. Together with the electron-phonon coupling constant lambda_ep \approx 1 this leaves an additional lambda_add \approx 2.4 for enhancement due to other mechanisms. △ Less

Submitted 4 February, 2005; originally announced February 2005.

Comments: Submitted to Physical Review B

Journal ref: Phys. Rev. B 71, 214517 (2005) [http://link.aps.org/abstract/PRB/v71/e214517]

Al substitution in MgB2 crystals: influence on superconducting and structural properties

Authors: J. Karpinski, N. D. Zhigadlo, G. Schuck, S. M. Kazakov, B. Batlogg, K. Rogacki, R. Puzniak, J. Jun, E. Muller, P. Wagli, R. Gonnelli, D. Daghero, G. A. Ummarino, V. A. Stepanov

Abstract: Single crystals of Mg1-xAlxB2 have been grown at a pressure of 30 kbar using the cubic anvil technique. Precipitation free crystals with x < 0.1 were obtained as a result of optimization of already developed MgB2 crystal growth procedure. Systematic decrease of the c-axis lattice constant with increasing Al content, when the a-axis lattice constant is practically unchanged, was observed. Variati… ▽ More Single crystals of Mg1-xAlxB2 have been grown at a pressure of 30 kbar using the cubic anvil technique. Precipitation free crystals with x < 0.1 were obtained as a result of optimization of already developed MgB2 crystal growth procedure. Systematic decrease of the c-axis lattice constant with increasing Al content, when the a-axis lattice constant is practically unchanged, was observed. Variation of the critical temperature on Al content in Mg1-xAlxB2 crystals was found to be slightly different than that one observed for polycrystalline samples since, even a very small substitution of 1-2% of Al leads to the decrease of Tc by about 2-3 K. X-ray and high resolution transmission electron microscopy investigations indicate on the appearance of second precipitation phase in the crystals with x > 0.1. This is in a form of non-superconducting MgAlB4 domains in the structure of superconducting Mg1-xAlxB2 matrix. Resistivity and magnetic investigations show the slight increase of the upper critical field, Hc2, for H//c for the samples with small x, significant reduction of the Hc2 anisotropy at lower temperatures, and decrease of the residual resistance ratio value for Al substituted samples as compared to those of unsubstituted crystals. Superconducting gaps variation as a function of Al content, investigated with point contact spectroscopy for the series of the crystals with Tc in the range from 20 to 37 K, does not indicate on the merging of the gaps with decreasing Tc down to 20 K. It may be related to an appearance of the precipitation phase in the Mg1-xAlxB2 structure. △ Less

Submitted 18 November, 2004; v1 submitted 17 November, 2004; originally announced November 2004.

Comments: PDF only, 33 pages, 4 tables, 18 figures

Journal ref: Phys. Rev. B 71, 174506 (2005)

Threshold Voltage Shift in Organic Field Effect Transistors by Dipole-Monolayers on the Gate Insulator

Authors: K. P. Pernstich, A. N. Rashid, S. Haas, G. Schitter, D. Oberhoff, C. Goldmann, D. J. Gundlach, B. Batlogg

Abstract: We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self assembled monolayer… ▽ More We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self assembled monolayer (SAM). The observed shift of the transfer characteristics range from -2 to 50 V and can be related to the surface potential of the layer next to the transistor channel. Concomitantly the mobile charge carrier concentration at zero gate bias reaches up to 4*10^12/cm^2. In the single crystal FETs the measured transfer characteristics are also shifted, while essentially maintaining the high quality of the subthreshold swing. The shift of the transfer characteristics is governed by the built-in electric field of the SAM and can be explained using a simple energy level diagram. In the thin film devices, the subthreshold region is broadened, indicating that the SAM creates additional trap states, whose density is estimated to be of order 1*10^12/cm^2. △ Less

Submitted 1 October, 2004; originally announced October 2004.

Comments: to be published in J. Appl. Phys

Effects of polarized organosilane self-assembled monolayers on organic single-crystal field-effect transistors

Authors: J. Takeya, T. Nishikawa, T. Takenobu, S. Kobayashi, C. Goldmann, C. Krellner, T. Shimoda, T. Mitani, Y Iwasa, B. Batlogg

Abstract: The surface conductivity is measured by a four-probe technique for pentacene and rubrene single-crystals laminated on polarized and nearly unpolarized molecular monolayers with application of perpendicular electric fields. The polarization of the self-assembled monolayers (SAMs) shifts the threshold gate voltage, while maintaining a very low subthreshold swing of the single-crystal devices (0.11… ▽ More The surface conductivity is measured by a four-probe technique for pentacene and rubrene single-crystals laminated on polarized and nearly unpolarized molecular monolayers with application of perpendicular electric fields. The polarization of the self-assembled monolayers (SAMs) shifts the threshold gate voltage, while maintaining a very low subthreshold swing of the single-crystal devices (0.11 V/decade). The results, excluding influences of parasitic contacts and grain boundaries, demonstrate SAM-induced nanoscale charge injection up to ~10^12 cm^-2 at the surface of the organic single crystals. △ Less

Submitted 16 July, 2004; v1 submitted 15 July, 2004; originally announced July 2004.

Comments: submitted to Appl. Phys. Lett

Carbon substitution in MgB2 single crystals: structural and superconducting properties

Authors: S. M. Kazakov, R. Puzniak, K. Rogacki, A. V. Mironov, N. D. Zhigadlo, J. Jun, Ch. Soltmann, B. Batlogg, J. Karpinski

Abstract: Growth of carbon substituted magnesium diboride Mg(B1-xCx)2 single crystals with 0<x<0.15 is reported and the structural, transport, and magnetization data are presented. The superconducting transition temperature decreases monotonically with increasing carbon content in the full investigated range of substitution. By adjusting the nominal composition, Tc of substituted crystals can be tuned in… ▽ More Growth of carbon substituted magnesium diboride Mg(B1-xCx)2 single crystals with 0<x<0.15 is reported and the structural, transport, and magnetization data are presented. The superconducting transition temperature decreases monotonically with increasing carbon content in the full investigated range of substitution. By adjusting the nominal composition, Tc of substituted crystals can be tuned in a wide temperature range between 10 and 39 K. Simultaneous introduction of disorder by carbon substitution and significant increase of the upper critical field Hc2 is observed. Comparing with the non-substituted compound, Hc2 at 15K for x=0.05 is enhanced by more then a factor of 2 for H oriented both perpendicular and parallel to the ab-plane. This enhancement is accompanied by a reduction of the Hc2-anisotropy coefficient gamma from 4.5 (for non-substituted compound) to 3.4 and 2.8 for the crystals with x = 0.05 and 0.095, respectively. At temperatures below 10 K, the single crystal with larger carbon content shows Hc2 (defined at zero resistance) higher than 7 and 24 T for H oriented perpendicular and parallel to the ab-plane, respectively. Observed increase of Hc2 cannot be explained by the change in the coherence length due to disorder-induced decrease of the mean free path only. △ Less

Submitted 4 May, 2004; originally announced May 2004.

Comments: 22 pages, 9 figures, 4 tables

Journal ref: Phys. Rev. B 71, 024533 (2005)

Synthesis of superconducting pyrochlore RbOs2O6

Authors: S. M. Kazakov, N. D. Zhigadlo, M. Brühwiler, B. Batlogg, J. Karpinski

Abstract: RbOs2O6, the third superconducting pyrochlore oxide (known so far), has been synthesized by encapsulation and by high pressure techniques. Suitable post chemical treatment of the as-prepared sample allowed us to eliminate the impurity phases. Bulk superconductivity with Tc=6.4 K was observed in magnetisation and specific heat measurements. The transition temperature of RbOs2O6 was found to be th… ▽ More RbOs2O6, the third superconducting pyrochlore oxide (known so far), has been synthesized by encapsulation and by high pressure techniques. Suitable post chemical treatment of the as-prepared sample allowed us to eliminate the impurity phases. Bulk superconductivity with Tc=6.4 K was observed in magnetisation and specific heat measurements. The transition temperature of RbOs2O6 was found to be the same for both preparation methods. Structural investigations showed that Rb atoms occupy the 8b site in the pyrochlore lattice with a lattice parameter of 10.1137(1) A. △ Less

Submitted 4 August, 2004; v1 submitted 23 March, 2004; originally announced March 2004.

Comments: 12 pages, 5 figures, correction to one author name and Figure 5

Journal ref: Supercond. Sci. Technol. 17 (2004) 1169-1172