Showing 1–40 of 40 results for author: Bass, J

An Angular Spectrum Approach to Inverse Synthesis for the Characterization of Optical and Geometrical Properties of Semiconductor Thin Films

Authors: John M. Bass, Manuel Ballester, Susana M. Fernández, Aggelos K. Katsaggelos, Emilio Márquez, Florian Willomitzer

Abstract: To design semiconductor-based optical devices, the optical properties of the used semiconductor materials must be precisely measured over a large band. Transmission spectroscopy stands out as an inexpensive and widely available method for this measurement but requires model assumptions and reconstruction algorithms to convert the measured transmittance spectra into optical properties of the thin f… ▽ More To design semiconductor-based optical devices, the optical properties of the used semiconductor materials must be precisely measured over a large band. Transmission spectroscopy stands out as an inexpensive and widely available method for this measurement but requires model assumptions and reconstruction algorithms to convert the measured transmittance spectra into optical properties of the thin films. Amongst the different reconstruction techniques, inverse synthesis methods generally provide high precision but rely on rigid analytical models of a thin film system. In this paper, we demonstrate a novel flexible inverse synthesis method that uses angular spectrum wave propagation and does not rely on rigid model assumptions. Amongst other evaluated parameters, our algorithm is capable of evaluating the geometrical properties of thin film surfaces, which reduces the variance caused by inverse synthesis optimization routines and significantly improves measurement precision. The proposed method could potentially allow for the characterization of "uncommon" thin film samples that do not fit the current model assumptions, as well as the characterization of samples with higher complexity, e.g., multi-layer systems. △ Less

Submitted 9 July, 2024; originally announced July 2024.

Comments: 10 pages, 7 figures, 5 tables

Demonstration of weighted graph optimization on a Rydberg atom array using local light-shifts

Authors: A. G. de Oliveira, E. Diamond-Hitchcock, D. M. Walker, M. T. Wells-Pestell, G. Pelegrí, C. J. Picken, G. P. A. Malcolm, A. J. Daley, J. Bass, J. D. Pritchard

Abstract: Neutral atom arrays have emerged as a versatile platform towards scalable quantum computation and optimization. In this paper we present first demonstrations of weighted graph optimization on a Rydberg atom array using annealing with local light-shifts. We verify the ability to prepare weighted graphs in 1D and 2D arrays, including embedding a five vertex non-unit disk graph using nine physical qu… ▽ More Neutral atom arrays have emerged as a versatile platform towards scalable quantum computation and optimization. In this paper we present first demonstrations of weighted graph optimization on a Rydberg atom array using annealing with local light-shifts. We verify the ability to prepare weighted graphs in 1D and 2D arrays, including embedding a five vertex non-unit disk graph using nine physical qubits. We find common annealing ramps leading to preparation of the target ground state robustly over a substantial range of different graph weightings. This work provides a route to exploring large-scale optimization of non-planar weighted graphs relevant for solving relevant real-world problems. △ Less

Submitted 3 April, 2024; originally announced April 2024.

Comments: 7 pages, 4 figures. Methods: 3 pages, 2 figures

The Quantitative Genetics of Human Disease: 1 Foundations

Authors: David J. Cutler, Kiana Jodeiry, Andrew J. Bass, Michael P. Epstein

Abstract: In this the first of an anticipated four paper series, fundamental results of quantitative genetics are presented from a first principles approach. While none of these results are in any sense new, they are presented in extended detail to precisely distinguish between definition and assumption, with a further emphasis on distinguishing quantities from their usual approximations. Terminology freque… ▽ More In this the first of an anticipated four paper series, fundamental results of quantitative genetics are presented from a first principles approach. While none of these results are in any sense new, they are presented in extended detail to precisely distinguish between definition and assumption, with a further emphasis on distinguishing quantities from their usual approximations. Terminology frequently encountered in the field of human genetic disease studies will be defined in terms of their quantitive genetics form. Methods for estimation of both quantitative genetics and the related human genetics quantities will be demonstrated. While practitioners in the field of human quantitative disease studies may find this work pedantic in detail, the principle target audience for this work is trainees reasonably familiar with population genetics theory, but with less experience in its application to human disease studies. We introduce much of this formalism because in later papers in this series, we demonstrate that common areas of confusion in human disease studies can be resolved be appealing directly to these formal definitions. The second paper in this series will discuss polygenic risk scores. The third paper will concern the question of "missing" heritability and the role interactions may play. The fourth paper will discuss sexually dimorphic disease and the potential role of the X chromosome. △ Less

Submitted 29 August, 2023; originally announced August 2023.

Superconductivity above 70 K observed in lutetium polyhydrides

Authors: Zhiwen Li, Xin He, Changling Zhang, Ke Lu, Baosen Min, Jun Zhang, Sijia Zhang, Jianfa Zhao, Luchuan Shi, Shaomin Feng, Xiancheng Wang, Yi Peng, Richeng Yu, Luhong Wang, Yingzhe Li, Jay D Bass, Vitali Prakapenka, Stella Chariton, Haozhe Liu, Changqing **

Abstract: The binary polyhydrides of heavy rare earth lutetium that shares a similar valence electron configuration to lanthanum have been experimentally discovered to be superconductive. The lutetium polyhydrides were successfully synthesized at high pressure and high temperature conditions using a diamond anvil cell in combinations with the in-situ high pressure laser heating technique. The resistance mea… ▽ More The binary polyhydrides of heavy rare earth lutetium that shares a similar valence electron configuration to lanthanum have been experimentally discovered to be superconductive. The lutetium polyhydrides were successfully synthesized at high pressure and high temperature conditions using a diamond anvil cell in combinations with the in-situ high pressure laser heating technique. The resistance measurements as a function of temperature were performed at the same pressure of synthesis in order to study the transitions of superconductivity (SC). The superconducting transition with a maximum onset temperature (Tc) 71 K was observed at pressure of 218 GPa in the experiments. The Tc decreased to 65 K when pressure was at 181 GPa. From the evolution of SC at applied magnetic fields, the upper critical field at zero temperature μ0Hc2(0) was obtained to be ~36 Tesla. The in-situ high pressure X-ray diffraction experiments imply that the high Tc SC should arise from the Lu4H23 phase with Pm-3n symmetry that forms a new type of hydrogen cage framework different from those reported for previous light rare earth polyhydride superconductors. △ Less

Submitted 24 March, 2023; v1 submitted 9 March, 2023; originally announced March 2023.

Journal ref: SCIENCE CHINA Physics, Mechanics & Astronomy 66, 267411 (2023)

Randomized Benchmarking using Non-Destructive Readout in a 2D Atom Array

Authors: B. Nikolov, E. Diamond-Hitchcock, J. Bass, N. L. R. Spong, J. D. Pritchard

Abstract: Neutral atoms are a promising platform for scalable quantum computing, however prior demonstration of high fidelity gates or low-loss readout methods have employed restricted numbers of qubits. Using randomized benchmarking of microwave-driven single-qubit gates, we demonstrate average gate errors of $7(2)\times10^{-5}$ on a 225 site atom array using conventional, destructive readout. We further d… ▽ More Neutral atoms are a promising platform for scalable quantum computing, however prior demonstration of high fidelity gates or low-loss readout methods have employed restricted numbers of qubits. Using randomized benchmarking of microwave-driven single-qubit gates, we demonstrate average gate errors of $7(2)\times10^{-5}$ on a 225 site atom array using conventional, destructive readout. We further demonstrate a factor of 1.7 suppression of the primary measurement errors via low-loss, non-destructive and state-selective readout on 49 sites whilst achieving gate errors of $2(9)\times10^{-4}$. △ Less

Submitted 19 June, 2023; v1 submitted 25 January, 2023; originally announced January 2023.

Comments: 6 pages, 4 figures plus Supplementary Material

Journal ref: Phys. Rev. Lett. 131, 030602 (2023)

Superconductivity above 200 K Observed in Superhydrides of Calcium

Authors: Z. Li, X. He, C. L. Zhang, X. C. Wang, S. J. Zhang, Y. T. Jia, S. M. Feng, K. Lu, J. F. Zhao, J. Zhang, B. S. Min, Y. W. Long, R. C. Yu, L. H. Wang, M. Y. Ye, Z. S. Zhang, V. Prakapenka, S. Chariton, P. A. Ginsberg, J. Bass, S. H. Yuan, H. Z. Liu, C. Q. **

Abstract: Searching for superconductivity with Tc near room temperature is of great interest both for fundamental science & many potential applications. Here we report the experimental discovery of superconductivity with maximum critical temperature (Tc) above 210 K in calcium superhydrides, the new alkali earth hydrides experimentally showing superconductivity above 200 K in addition to sulfur hydride & ra… ▽ More Searching for superconductivity with Tc near room temperature is of great interest both for fundamental science & many potential applications. Here we report the experimental discovery of superconductivity with maximum critical temperature (Tc) above 210 K in calcium superhydrides, the new alkali earth hydrides experimentally showing superconductivity above 200 K in addition to sulfur hydride & rare-earth hydride system. The materials are synthesized at the synergetic conditions of 160~190 GPa and ~2000 K using diamond anvil cell combined with in-situ laser heating technique. The superconductivity was studied through in-situ high pressure electric conductance measurements in an applied magnetic field for the sample quenched from high temperature while maintained at high pressures. The upper critical field Hc(0) was estimated to be ~268 T while the GL coherent length is ~11 angstrom. The in-situ synchrotron X-ray diffraction measurements suggest that the synthesized calcium hydrides are primarily composed of CaH6 while there may also exist other calcium hydrides with different hydrogen contents. △ Less

Submitted 9 June, 2022; v1 submitted 31 March, 2021; originally announced March 2021.

Journal ref: Nature Communications 13, 2863 (2022)

Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K

Authors: Yiyin Zhou, Solomon Ojo, Yuanhao Miao, Huong Tran, Joshua M. Grant, Grey Abernathy, Sylvester Amoah, Jake Bass, Gregory Salamo, Wei Du, Jifeng Liu, Joe Margetis, John Tolle, Yong-Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, Shui-Qing Yu

Abstract: GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just begun only recently. In this work, we present explorative investigations of electrically injected GeSn heterostructure lasers with various layer thicknesses an… ▽ More GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just begun only recently. In this work, we present explorative investigations of electrically injected GeSn heterostructure lasers with various layer thicknesses and material compositions. The cap layer total thickness was varied between 240 and 100 nm. At 10 K, a 240-nm-SiGeSn capped device had a threshold current density Jth = 0.6 kA/cm2 compared to Jth = 1.4 kA/cm2 of a device with 100-nm-SiGeSn cap due to an improved modal overlap with the GeSn gain region. Both devices had a maximum operating temperature Tmax = 100 K. Device with cap layers of Si0.03Ge0.89Sn0.08 and Ge0.95Sn0.05, respectively, were also compared. Due to less effective carrier (electron) confinement, the device with a 240-nm-GeSn cap had a higher threshold Jth = 2.4 kA/cm2 and lower maximum operating temperature Tmax = 90 K, compared to those of the 240-nm-SiGeSn capped device with Jth = 0.6 kA/cm2 and Tmax = 100 K. In the study of the active region material, the device with Ge0.85Sn0.15 active region had a 2.3 times higher Jth and 10 K lower Tmax, compared to the device with Ge0.89Sn0.11 in its active region. This is likely due to higher defect density in Ge0.85Sn0.15 rather than an intrinsic issue. The longest lasing wavelength was measured as 2682 nm at 90 K. The investigations provide guidance to the future structure design of GeSn laser diodes to further improve the performance. △ Less

Submitted 25 September, 2020; originally announced September 2020.

Comments: 21 pages, 5 figures, and 2 tables

Tailoring Product Ownership in Large-Scale Agile

Authors: Julian M. Bass, Andy Haxby

Abstract: In large-scale agile projects, product owners undertake a range of challenging and varied activities beyond those conventionally associated with that role. Using in-depth research interviews from 93 practitioners working in cross-border teams, from 21 organisations, our rich empirical data offers a unique international perspective into product owner activities. We found that the leaders of large-s… ▽ More In large-scale agile projects, product owners undertake a range of challenging and varied activities beyond those conventionally associated with that role. Using in-depth research interviews from 93 practitioners working in cross-border teams, from 21 organisations, our rich empirical data offers a unique international perspective into product owner activities. We found that the leaders of large-scale agile projects create product owner teams. Product owner team members undertake sponsor, intermediary and release plan master activities to manage scale. They undertake communicator and traveller activities to manage distance and technical architect, governor and risk assessor activities to manage governance. Based on our findings, we describe product owner behaviors that are valued by experienced product owners and their line managers. △ Less

Submitted 16 December, 2018; originally announced December 2018.

Comments: 9 pages, 1 Table and 1 Figure, IEEE Software, to appear

A Study of the Scrum Master's Role

Authors: John Noll, Mohammad Abdur Razzak, Julian M Bass, Sarah Beecham

Abstract: Scrum is an increasingly common approach to software development adopted by organizations around the world. However, as organizations transition from traditional plan-driven development to agile development with Scrum, the question arises as to which Scrum role (Product Owner, Scrum Master, or Scrum Team Member) corresponds to a Project Manager, or conversely which Scrum role should the Project Ma… ▽ More Scrum is an increasingly common approach to software development adopted by organizations around the world. However, as organizations transition from traditional plan-driven development to agile development with Scrum, the question arises as to which Scrum role (Product Owner, Scrum Master, or Scrum Team Member) corresponds to a Project Manager, or conversely which Scrum role should the Project Managers adopt? In an attempt to answer this question, we adopted a mixed-method research approach comprising a systematic literature review and embedded case study of a commercial software development team. Our research has identified activities that comprise the Scrum Master role, and which additional roles are actually performed by Scrum Masters in practice. We found nine activities that are performed by Scrum Masters. In addition, we found that Scrum Masters also perform other roles, most importantly as Project Managers. This latter situation results in tension and conflict of interest that could have a negative impact on the performance of the team as a whole. These results point to the need to re-assess the role of Project Managers in organizations that adopt Scrum as a development approach. We hypothesize that it might be better for Project Managers to become Product Owners, as aspects of this latter role are more consistent with the traditional responsibilities of a Project Manager. △ Less

Submitted 24 August, 2019; v1 submitted 4 December, 2017; originally announced December 2017.

Comments: 16 pages, 1 figure, PROFES 2017

Journal ref: In Product-Focused Software Process Improvement. PROFES 2017. Lecture Notes in Computer Science, vol 10611. Springer, Cham (2017)

CPP Magnetoresistance of Magnetic Multilayers: A critical review

Authors: Jack Bass

Abstract: We present a comprehensive review of data and analysis of Giant (G) Magnetoresistance (MR) with Current-flow Perpendicular-to-layer-Planes (CPP-MR) of magnetic multilayers [F/N]n (n = number of repeats) with alternating nanoscale layers of ferromagnetic (F) and non-magnetic (N) metals. GMR, a large change in resistance when an applied magnetic field changes the moment ordering of adjacent F-layers… ▽ More We present a comprehensive review of data and analysis of Giant (G) Magnetoresistance (MR) with Current-flow Perpendicular-to-layer-Planes (CPP-MR) of magnetic multilayers [F/N]n (n = number of repeats) with alternating nanoscale layers of ferromagnetic (F) and non-magnetic (N) metals. GMR, a large change in resistance when an applied magnetic field changes the moment ordering of adjacent F-layers from anti-parallel (AP) to parallel (P), was discovered in 1988 in the Current-flow-in-layer-Planes (CIP) geometry. The CPP-MR has two advantages over the CIP-MR: (1) it allows more direct access to the underlying physics; and (2) it is usually larger, which should be advantageous for devices. When the first CPP-MR data were published in 1991, it was not clear whether electronic transport in GMR multilayers is fully diffusive or at least partly ballistic. It was not known whether the properties of layers and interfaces would vary with layer thickness or number. It was not known if the CPP-MR would be dominated by scattering within the F-metals or at the F/N interfaces. Nothing was known about: (1) spin-flip** within F-metals, characterized by a spin-diffusion length, l(F)sf; (2) interface specific resistances (AR = area A times resistance R) for N1/N2 interfaces; (3) interface specific resistances and spin-dependent scattering asymmetry at F/N and F1/F2 interfaces; and (4) spin-flip** at F/N, F1/F2 and N1/N2 interfaces. Knowledge of spin-dependent scattering asymmetries in F-metals and F-alloys, and of spin-flip** in N-metals and N-alloys was limited. We show how CPP-MR measurements have quantified the scattering and spin-flip** parameters that determine CPP-MR for a wide range of F- and N-metals and alloys and of F/N pairs. We also review progress in finding techniques and F-alloys and F/N pairs to enhance the CPP-MR to make it more competitive for devices. △ Less

Submitted 23 November, 2015; originally announced November 2015.

Comments: 140 pages, 104 figures, 18 tables, 379 references

Journal ref: J. Magn. Magn. Mater. 408, 244-320, 2016

Spin-Flip** in Pt and at Co/Pt Interfaces

Authors: Hoang Yen Thi Nguyen, Jack Bass, William P. Pratt Jr

Abstract: There has been recent controversy about the magnitude of spin-flip** in the heavy metal Pt, characterized by the spin-diffusion length, lsf(Pt) We propose a resolution of this controversy, and also present evidence for the importance of a phenomenon neglected in prior studies of transport across sputtered Ferromagnetic/Pt (F/Pt) interfaces, spin-flip** at the interface. The latter is character… ▽ More There has been recent controversy about the magnitude of spin-flip** in the heavy metal Pt, characterized by the spin-diffusion length, lsf(Pt) We propose a resolution of this controversy, and also present evidence for the importance of a phenomenon neglected in prior studies of transport across sputtered Ferromagnetic/Pt (F/Pt) interfaces, spin-flip** at the interface. The latter is characterized by an interface spin-flip** parameter, delta(Co/Pt) that specifies the probability P = [1 - exp(-delta)] of a conduction electron flip** its spin direction as it traverses a Co/Pt interface. From studies of the Current-Perpendicular-to-Plane (CPP) Resistances and Magnetoresistances of sputtered ferromagnetically coupled Co/Pt multilayers by themselves, and embedded within Py-based Double Exchange-biased Spin-Valves, we derive values at 4.2K of delta(Co/Pt) = 0.9 (+0.5/-0.2), the interface specific resistance, AR*(Co/Pt) = 0.74 +/- 0.15 fohm-m(2). and the interface spin-scattering asymmetry, gamma(Co/Pt) = 0.58 +/- 0.12. This value of delta(Co/Pt) is much larger than ones previously found for interfaces involving Co but not Pt. To derive delta requires knowledge of the spin-diffusion length, lsf(Pt), for our sputtered Pt. We derive lsf(Pt) from separate measurements. Combining our results with those from others, we find that lsf(Pt) for Pt is approximately proportional to the inverse resistivity, 1/rho(Pt). △ Less

Submitted 14 December, 2013; v1 submitted 16 October, 2013; originally announced October 2013.

Comments: 6 pages, 4 figures, submitted for publication. This version has been revised to better explain the significance of the paper and to compare some new data with older data

Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)

Authors: Jack Bass

Abstract: Measurements of Giant Magnetoresistance (GMR) in ferromagnetic/non-magnetic (F/N) multilayers with Current flow Perpendicular to the layer Planes (CPP-geometry) can give better access to the fundamental physics underlying GMR than measurements with the more usual Current flow In the layer Planes (CIP geometry). Because the same measuring current passes through all of the layers, the CPP-MR can oft… ▽ More Measurements of Giant Magnetoresistance (GMR) in ferromagnetic/non-magnetic (F/N) multilayers with Current flow Perpendicular to the layer Planes (CPP-geometry) can give better access to the fundamental physics underlying GMR than measurements with the more usual Current flow In the layer Planes (CIP geometry). Because the same measuring current passes through all of the layers, the CPP-MR can often be described by simpler equations that allow separation of effects of scattering within the bulk of the F- and N-metals and at F/N, N1/N2, and F/S (S = superconductor) interfaces. We first describe the parameters that are used to characterize the CPP-MR, the different techniques used to measure these parameters, and the different types of multilayers used to control the two orientations of the magnetizations of adjacent F-layers, anti-parallel (AP) and parallel (P), that permit isolation of the parameters. We then detail what has been learned about the parameters of bulk F-metals, of bulk N-metals, and of F/N, N1/N2, and F/S interfaces. Especially important are the parameters of interfaces and the spin-diffusion lengths in F-metals and F-alloys, about which almost nothing was known in advance. Lastly, we describe work toward CPP-MR devices and studies of magnetothermoelectric effects, before summarizing what has been learned and listing some items not yet understood. △ Less

Submitted 16 May, 2013; originally announced May 2013.

Comments: 30 pages, 20 figures, 7 tables. This version has been-submitted as a chapter in the second of three volumes of a Handbook of Spintronics, Eds. D. Awschalom, Y. Xu, J. Nitta, to be published by Springer, expected publication June, 2014. The chapter focuses upon determinations of quantitative values for CPP-MR parameters and upon recent progress toward potential device applicability

Conduction Electron Scattering and Spin-Flip** at Sputtered Co/Ni Interfaces

Authors: H. Y. T. Nguyen, R. Acharyya, E. Huey, B. Richard, R. Loloee, W. P. Pratt Jr., J. Bass, Shuai Wang, Ke Xia

Abstract: Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let us quantify conduction electron scattering and spin-flip** at a sputtered ferromagnetic/ferromagnetic (F1/F2 = Co/Ni) interface, with important consequences for CPP-MR and spin-torque experiments with perpendicular anisotropy. We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, and Py-based, symmetric double excha… ▽ More Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let us quantify conduction electron scattering and spin-flip** at a sputtered ferromagnetic/ferromagnetic (F1/F2 = Co/Ni) interface, with important consequences for CPP-MR and spin-torque experiments with perpendicular anisotropy. We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, and Py-based, symmetric double exchange-biased spin-valves (DEBSVs) containing inserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Ni multilayers, to derive Co/Ni interface specific resistances AR(Co/Ni)(Up) = 0.03 (+0.02)(-0.03) f-ohm-m^2 and AR(Co/Ni)(down) = 1.00 +/- 0.07 f-ohm-m^2, and interface spin-flip** parameter delta(Co/Ni) = 0.35 +/- 0.05. The specific resistances are consistent with our no-free-parameter calculations for an interface thickness between 2 and 4 monolayers (ML) that is compatible with expectations. △ Less

Submitted 20 December, 2010; originally announced December 2010.

Comments: 5 pages, 2 figures, 3 tables, Submitted to Phys.Rev.B (Rapid Comm.)

A Study of Spin-Flip** in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves

Authors: R. Acharyya, H. Y. T. Nguyen, W. P. Pratt Jr., J. Bass

Abstract: To study spin flip** within the antiferromagnet IrMn, we extended prior Current-Perpendicular-to-Plane (CPP) Giant Magnetoresistance (GMR) studies of Py-based exchange-biased-spin-valves containing IrMn inserts to thicker IrMn layers-5 nm less than or equal to t(IrMn) less than or equal to 30 nm. Unexpectedly, AΔR = A[R(AP) - R(P)]--the difference in specific resistance between the anti-parallel… ▽ More To study spin flip** within the antiferromagnet IrMn, we extended prior Current-Perpendicular-to-Plane (CPP) Giant Magnetoresistance (GMR) studies of Py-based exchange-biased-spin-valves containing IrMn inserts to thicker IrMn layers-5 nm less than or equal to t(IrMn) less than or equal to 30 nm. Unexpectedly, AΔR = A[R(AP) - R(P)]--the difference in specific resistance between the anti-parallel (AP) and parallel (P) magnetic states of the two Py layers-did not decrease with increasing t(IrMn), for t(IrMn) greater than 5 nm, but rather became constant to within our measuring uncertainty. This constant looks to be due mostly to a new, small MR in thin Py layers. The constant complicates isolating the spin-diffusion length, lsf(IrMn), in bulk IrMn, but lsf(IrMn) is probably short, less than or equal to 1 nm. Similar results were found with FeMn. △ Less

Submitted 18 December, 2010; originally announced December 2010.

Comments: 3 pages, 3 figures, 2010 MMM Conference

Conduction Electron Spin-Flip** at Sputtered Co(90)Fe(10)/Cu Interfaces

Authors: H. Y. T. Nguyen, R. Acharyya, W. P. Pratt Jr., J. Bass

Abstract: From measurements of the current-perpendicular-to-plane (CPP) magnetoresistance of ferromagnetically coupled [Co(90)Fe(10)/Cu]xn multilayers, within sputtered Permalloy-based double exchange biased spin-valves, we determine the parameter delta[(Co(90)Fe(10))/Cu] = 0.19 +/- 0.04 that sets the probability P of spin-flip** at a Co(90)Fe(10)/Cu interface via the equation P = 1 - exp(-delta). From measurements of the current-perpendicular-to-plane (CPP) magnetoresistance of ferromagnetically coupled [Co(90)Fe(10)/Cu]xn multilayers, within sputtered Permalloy-based double exchange biased spin-valves, we determine the parameter delta[(Co(90)Fe(10))/Cu] = 0.19 +/- 0.04 that sets the probability P of spin-flip** at a Co(90)Fe(10)/Cu interface via the equation P = 1 - exp(-delta). △ Less

Submitted 18 December, 2010; originally announced December 2010.

Comments: 3 pages, 2 figures, 2010 MMM Conference

A way to measure electron spin-flip** at F/N interfaces and application to Co/Cu

Authors: B. Dassonneville, R. Acharyya, H. Y. T. Nguyen, R. Loloee, W. P. Pratt Jr., J. Bass

Abstract: We describe a technique, using the current-perpendicular-to-plane (CPP) geometry, to measure the parameter delta(F/N), characterizing flip** of electron spins at a ferromagnetic/non-magnetic (F/N) metallic interface. The technique involves measuring the CPP magnetoresistance of a sample containing a ferromagnetically coupled [F/N]x n multilayer embedded within the 20 nm thick central Cu layer… ▽ More We describe a technique, using the current-perpendicular-to-plane (CPP) geometry, to measure the parameter delta(F/N), characterizing flip** of electron spins at a ferromagnetic/non-magnetic (F/N) metallic interface. The technique involves measuring the CPP magnetoresistance of a sample containing a ferromagnetically coupled [F/N]x n multilayer embedded within the 20 nm thick central Cu layer of a symmetric Py-based, double exchange-biased spin-valve. To focus on delta(F/N), the F- and N-layers are made thin compared to their spin-diffusion lengths. We test the technique using F/N = Co/Cu. Analysing with no adjustable parameters, gives inconsistency with delta(Co/Cu) = 0, but consistency with our prior value of delta(Co/Cu) = 0.25 (+/- 0.1). Taking delta(Co/Cu) as adjustable gives delta(Co/Cu) = 0.33 (+0.03/-0.08). △ Less

Submitted 22 December, 2009; originally announced December 2009.

Comments: 3 pages, 2 figures. To appear in Applied Physics Letters

Perpendicular-current Studies of Electron Transport Across Metal/Metal Interfaces

Authors: W. P. Pratt Jr., J. Bass

Abstract: We review what we have learned about the scattering of electrons by the interfaces between two different metals (M1/M2) in the current-perpendicular-to-plane (CPP) geometry. In this geometry, the intrinsic quantity is the specific resistance, AR, the product of the area through which the CPP current flows times the CPP resistance. We describe results for both non-magnetic/non-magnetic (N1/N2) an… ▽ More We review what we have learned about the scattering of electrons by the interfaces between two different metals (M1/M2) in the current-perpendicular-to-plane (CPP) geometry. In this geometry, the intrinsic quantity is the specific resistance, AR, the product of the area through which the CPP current flows times the CPP resistance. We describe results for both non-magnetic/non-magnetic (N1/N2) and ferromagnetic/non-magnetic (F/N) pairs. We focus especially upon cases where M1/M2 are lattice matched (i.e., have the same crystal structure and the same lattice parameters to within ~ 1%), because in these cases no-free-parameter calculations of 2AR agree surprisingly well with measured values. But we also list and briefly discuss cases where M1/M2 are not lattice matched, either having different crystal structures, or lattice parameters that differ by several percent. The published calculations of 2AR in these latter cases do not agree so well with measured values. △ Less

Submitted 4 June, 2009; originally announced June 2009.

Comments: 6 pages, 2 figures, 2 tables. In Press: Applied Surface Science

Sensitivity of Ag/Al Interface Specific Resistances to Interfacial Intermixing

Authors: A. Sharma, N. Theodoropoulou, Shuai Wang, Ke Xia, W. P. Pratt Jr., J. Bass

Abstract: We have measured an Ag/Al interface specific resistance, 2AR(Ag/Al)(111) = 1.4 fOhm-m^2, that is twice that predicted for a perfect interface, 50% larger than for a 2 ML 50%-50% alloy, and even larger than our newly predicted 1.3 fOhmm^2 for a 4 ML 50%-50% alloy. Such a large value of 2ARAg/Al(111) confirms a predicted sensitivity to interfacial disorder and suggests an interface greater than or… ▽ More We have measured an Ag/Al interface specific resistance, 2AR(Ag/Al)(111) = 1.4 fOhm-m^2, that is twice that predicted for a perfect interface, 50% larger than for a 2 ML 50%-50% alloy, and even larger than our newly predicted 1.3 fOhmm^2 for a 4 ML 50%-50% alloy. Such a large value of 2ARAg/Al(111) confirms a predicted sensitivity to interfacial disorder and suggests an interface greater than or equal to 4 ML thick. From our calculations, a predicted anisotropy ratio, 2AR(Ag/Al)(001)/2AR(Ag/Al)(111), of more then 4 for a perfect interface, should be reduced to less than 2 for a 4 ML interface, making it harder to detect any such anisotropy. △ Less

Submitted 4 June, 2009; originally announced June 2009.

Comments: 3 pages, 2 figures, 1 table. In Press: Journal of Applied Physics

Specific Resistance of Pd/Ir Interfaces

Authors: R. Acharyya, H. Y. T. Nguyen, R. Loloee, W. P. Pratt Jr., J. Bass, Shuai Wang, Ke Xia

Abstract: From measurements of the current-perpendicular-to-plane (CPP) total specific resistance (AR = area times resistance) of sputtered Pd/Ir multilayers, we derive the interface specific resistance, 2AR(Pd/Ir) = 1.02 +/- 0.06 fOhmm^2, for this metal pair with closely similar lattice parameters. Assuming a single fcc crystal structure with the average lattice parameter, no-free-parameter calculations,… ▽ More From measurements of the current-perpendicular-to-plane (CPP) total specific resistance (AR = area times resistance) of sputtered Pd/Ir multilayers, we derive the interface specific resistance, 2AR(Pd/Ir) = 1.02 +/- 0.06 fOhmm^2, for this metal pair with closely similar lattice parameters. Assuming a single fcc crystal structure with the average lattice parameter, no-free-parameter calculations, including only spd orbitals, give for perfect interfaces, 2AR(Pd/Ir)(Perf) = 1.21 +/-0.1 fOhmm^2, and for interfaces composed of two monolayers of a random 50%-50% alloy, 2AR(Pd/Ir)(50/50) = 1.22 +/- 0.1 fOhmm^2. Within mutual uncertainties, these values fall just outside the range of the experimental value. Updating to add f-orbitals gives 2AR(Pd/Ir)(Perf) = 1.10 +/- 0.1 fOhmm^2 and 2AR(Pd/Ir)(50-50) = 1.13 +/- 0.1 fOhmm^2, values now compatible with the experimental one. We also update, with f-orbitals, calculations for other pairs △ Less

Submitted 23 December, 2008; originally announced December 2008.

Comments: 3 pages, 1 figure, in press in Applied Physics Letters

Spin-Diffusion Lengths in Dilute Cu(Ge) and Ag(Sn) Alloys

Authors: Q. Fowler, B. Richard, A. Sharma, N. Theodoropoulou, R. Loloee, W. P. Pratt Jr., J. Bass

Abstract: We use current-perpendicular-to-plane (CPP) exchange-biased spin-valves to directly measure spin diffusion lengths lsf for N = Cu(2.1 at.%Ge) and Ag(3.6 at.%Sn) alloys. We find lsf(Cu2%Ge)) = 117+10-6 nm and lsf(Ag4%Sn)= 39 +/- 3 nm. The good agreement of this lsf(Cu2%Ge) with the value lsf(Cu2%Ge) = 121 +/- 10 nm derived from an independent spin-orbit cross-section measurement for Ge in Cu, qua… ▽ More We use current-perpendicular-to-plane (CPP) exchange-biased spin-valves to directly measure spin diffusion lengths lsf for N = Cu(2.1 at.%Ge) and Ag(3.6 at.%Sn) alloys. We find lsf(Cu2%Ge)) = 117+10-6 nm and lsf(Ag4%Sn)= 39 +/- 3 nm. The good agreement of this lsf(Cu2%Ge) with the value lsf(Cu2%Ge) = 121 +/- 10 nm derived from an independent spin-orbit cross-section measurement for Ge in Cu, quantitatively validates the use of Valet-Fert theory for CPP-MR data analysis to layer thicknesses several times larger than had been done before. From the value of lsf(Ag4%Sn), we predict the ESR spin-orbit cross-section for Sn impurities in Ag. △ Less

Submitted 12 September, 2008; originally announced September 2008.

Comments: 4 pages, 2 figures. In Press in Journal of Magnetism and Magnetic Materials

Studies of Effects of Current on Exchange-Bias: A Brief Review

Authors: J. Bass, A. Sharma, Z. Wei, M. Tsoi

Abstract: MacDonald and co-workers recently predicted that high current densities could affect the magnetic order of antiferromagnetic (AFM) multilayers, in ways similar to those that occur in ferromagnetic (F) multilayers, and that changes in AFM magnetic order can produce an antiferromagnetic Giant Magnetoresistance (AGMR). Four groups have now studied current-driven effects on exchange bias at F/AFM in… ▽ More MacDonald and co-workers recently predicted that high current densities could affect the magnetic order of antiferromagnetic (AFM) multilayers, in ways similar to those that occur in ferromagnetic (F) multilayers, and that changes in AFM magnetic order can produce an antiferromagnetic Giant Magnetoresistance (AGMR). Four groups have now studied current-driven effects on exchange bias at F/AFM interfaces. In this paper, we first briefly review the main predictions by MacDonald and co-workers, and then the results of experiments on exchange bias that these predictions stimulated. △ Less

Submitted 21 April, 2008; originally announced April 2008.

Comments: 8 pages, 5 figures

Journal ref: Journal of Magnetics (Korean Magnetics Society), Vol. 13, Pp. 1-6 (2008)

Point-contact search for antiferromagnetic giant magnetoresistance

Authors: Z. Wei, A. Sharma, J. Bass, M. Tsoi

Abstract: We report the first measurements of effects of large current densities on current-perpendicular-to-plane magnetoresistance (MR) of magnetic multilayers containing two antiferromagnetic layers separated by a non-magnetic layer. These measurements were intended to search for a recently predicted antiferromagnetic giant magnetoresistance (AGMR) similar to GMR seen in multilayers containing two ferr… ▽ More We report the first measurements of effects of large current densities on current-perpendicular-to-plane magnetoresistance (MR) of magnetic multilayers containing two antiferromagnetic layers separated by a non-magnetic layer. These measurements were intended to search for a recently predicted antiferromagnetic giant magnetoresistance (AGMR) similar to GMR seen in multilayers containing two ferromagnetic layers separated by a non-magnetic layer. We report on MR measurements for current injected from point contacts into sandwiches containing different combinations of layers of F = CoFe and AFM = FeMn. In addition to: AFM/N/AFM, F/AFM/N/AFM, and F/AFM/N/AFM/F structures, initial results led us to examine also AFM/F/N/AFM, F/AFM, and single F- and AFM-layer structures. At low currents, no MR was observed in any samples, and no MR was observed at any current densities in samples containing only AFMs. Together, these results indicate that no AGMR is present in these samples. In samples containing F-layers, high current densities sometimes produced a small positive MR - largest resistance at high fields. For a given contact resistance, this MR was usually larger for thicker F-layers, and for a given current, it was usually larger for larger contact resistances (smaller contacts). We tentatively attribute this positive MR to suppression at high currents of spin accumulation induced around and within the F-layers. △ Less

Submitted 24 October, 2008; v1 submitted 1 November, 2007; originally announced November 2007.

Comments: outcome of further studies; to appear in J. Appl. Phys

Ballistic vs Diffusive Transport in Current-Induced Magnetization Switching

Authors: N. Theodoropoulou, A. Sharma, W. P. Pratt Jr, J. Bass, M. D. Stiles, J. Xiao

Abstract: We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to diffusive. Here ballistic corresponds to a ratio r = lambda/t greater than or equal to 3 for a Cu spacer layer, and diffusive to r = lambda/t less than or equa… ▽ More We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to diffusive. Here ballistic corresponds to a ratio r = lambda/t greater than or equal to 3 for a Cu spacer layer, and diffusive to r = lambda/t less than or equal to 0.4 for a CuGe alloy spacer layer, where lambda is the mean-free-path in the N-layer of fixed thickness t = 10 nm. The average switching currents for the alloy spacer layer are only modestly larger than those for Cu. The best available model predicts a much greater sensitivity of the switching currents to diffuse scattering in the spacer layer than we see. △ Less

Submitted 19 November, 2007; v1 submitted 23 August, 2007; originally announced August 2007.

Comments: 11 pages, including 1 figure

Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flip** at Metal/Metal Interfaces: an Experimentalist's Critical Review

Authors: Jack Bass, William P. Pratt Jr

Abstract: In magnetoresistive (MR) studies of magnetic multilayers composed of combinations of ferromagnetic (F) and non-magnetic (N) metals, the magnetic moment (or related 'spin') of each conduction electron plays a crucial role, supplementary to that of its charge. While initial analyses of MR in such multilayers assumed that the direction of the spin of each electron stayed fixed as the electron trans… ▽ More In magnetoresistive (MR) studies of magnetic multilayers composed of combinations of ferromagnetic (F) and non-magnetic (N) metals, the magnetic moment (or related 'spin') of each conduction electron plays a crucial role, supplementary to that of its charge. While initial analyses of MR in such multilayers assumed that the direction of the spin of each electron stayed fixed as the electron transited the multilayer, we now know that this is true only in a certain limit. Generally, the spins 'flip' in a distance characteristic of the metal, its purity, and the temperature. They can also flip at F/N or N1/N2 interfaces. In this review we describe how to measure the lengths over which electron moments flip in pure metals and alloys, and the probability of spin-flip** at metallic interfaces. Spin-flip** within metals is described by a spin-diffusion length,l^M(sf), where the metal M = F or N. Spin-diffusion lengths are the characteristic lengths in the current-perpendicular-to-plane (CPP) and lateral non-local (LNL) geometries that we focus upon in this review. In certain simple cases, l^N(sf) sets the distance over which the CPP-MR and LNL-MR decrease as the N-layer thickness (CPP-MR) or N-film length (LNL) increases, and l^F(sf) does the same for increase of the CPP-MR with increasing F-layer thickness. Spin-flip** at M1/M2 interfaces can be described by a parameter, delta(M1/M2), which determines the spin-flip** probability, P = 1 - exp(-delta). Increasing delta(M1/M2) usually decreases the MR. We list measured values of these parameters and discuss the limitations on their determinations. △ Less

Submitted 30 January, 2007; v1 submitted 3 October, 2006; originally announced October 2006.

Comments: Invited Review, to appear in J. Phys. Cond. Matter. 50 pages, 18 figures. The new version contains additional material and revisions to improve clarity

Spin transfer in an antiferromagnet

Authors: Z. Wei, A. Sharma, A. S. Nunez, P. M. Haney, R. A. Duine, J. Bass, A. H. MacDonald, M. Tsoi

Abstract: An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous potential in a broad range of technologies, including magnetic memory and recording. Recently, it has been predicted that spin transfer is not limited to ferro… ▽ More An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous potential in a broad range of technologies, including magnetic memory and recording. Recently, it has been predicted that spin transfer is not limited to ferromagnets, but can also occur in antiferromagnetic materials and even be stronger under some conditions. In this paper we demonstrate transfer of spin angular momentum across an interface between ferromagnetic and antiferromagnetic metals. The spin transfer is mediated by an electrical current of high density (~10^12 A/m^2) and revealed by variation in the exchange bias at the ferromagnet/antiferromagnet interface. We find that, depending on the polarity of the electrical current flowing across the interface, the strength of the exchange bias can either increase or decrease. This finding is explained by the theoretical prediction that a spin polarized current generates a torque on magnetic moments in the antiferromagnet. Current-mediated variation of exchange bias can be used to control the magnetic state of spin-valve devices, e.g., in magnetic memory applications. △ Less

Submitted 16 June, 2006; originally announced June 2006.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 98, 116603 (2007)

Comparison of Measured and Calculated Specific Resistances of Pd/Pt Interfaces

Authors: S. K. Olson, R. Loloee, N. Theodoropoulou, W. P. Pratt Jr., J. Bass

Abstract: We compare specific resistances (AR equals area A times resistance R) of sputtered Pd/Pt interfaces measured in two different ways with no-free-parameter calculations. One way gives 2AR(Pd/Pt) of 0.29 (0.03) fohm-m(2) and the other 0.17 (0.13) fohm-m(2). From these we derive a best estimate of 2AR(Pd/Pt) of 0.28 (0.06) fohm-m(2), which overlaps with no-free-parameter calculations: 2AR(predicted)… ▽ More We compare specific resistances (AR equals area A times resistance R) of sputtered Pd/Pt interfaces measured in two different ways with no-free-parameter calculations. One way gives 2AR(Pd/Pt) of 0.29 (0.03) fohm-m(2) and the other 0.17 (0.13) fohm-m(2). From these we derive a best estimate of 2AR(Pd/Pt) of 0.28 (0.06) fohm-m(2), which overlaps with no-free-parameter calculations: 2AR(predicted) of 0.30 (0.04) fohm-m(2) for flat, perfect interfaces, or 0.33 (0.04) fohm-m(2) for interfaces composed of 2 monolayers of a 50percent-50percent PdPt alloy. These results support three prior examples of agreement between calculations and measurements for pairs of metals having the same crystal structure and the same lattice parameter to within 1 percent. We also estimate the spin-flip** probability at Pd/Pt interfaces as 0.13 (0.08). △ Less

Submitted 23 May, 2005; v1 submitted 19 May, 2005; originally announced May 2005.

Comments: 3 pages, 3 figures, submitted for publication New version has corrected value of delta(Pd/Pt)

The Analogue of the Dedekind Eta Function for CY Manifolds I

Authors: Jamey Bass, Andrey Todorov

Abstract: This is the first of a series of articles in which we are going to study the regularized determinants of the Laplacians of Calabi Yau metrics acting on (0,q) forms on the moduli space of CY manifolds with a fixed polarization. It is well known that in case of the elliptic curves the Kronecker limit formula gives an explicit formula for the regularized determinants of the flat metrics with fixed… ▽ More This is the first of a series of articles in which we are going to study the regularized determinants of the Laplacians of Calabi Yau metrics acting on (0,q) forms on the moduli space of CY manifolds with a fixed polarization. It is well known that in case of the elliptic curves the Kronecker limit formula gives an explicit formula for the regularized determinants of the flat metrics with fixed volume on the elliptic curves. The following formula holds in this case; the regularized determinant is the product of the imaginary part of the complex number in the Siegel upper half plane with the Dedekind eta function. It is well known fact that the Dedekind eta function in power 24 is a cusp automorphic form of weight 12 related to the discriminant of the elliptic curve. Thus we can view that the regularized determinant is the norm of a section of some power of the line bundle of the classes of cohomologies of (1,0) forms of the elliptic curves over its moduli space. Our purpose is to generalize this fact in the case of CY manifolds. In this paper we will establish the local analogue of the Kronecker limit formula for CY manifolds. △ Less

Submitted 27 October, 2005; v1 submitted 12 March, 2005; originally announced March 2005.

Comments: one reference is added

MSC Class: 14J32

Journal ref: Journal fur die reine und angewandte Mathematik (Crelles Journal), v. 599, 61-96 (2006).

Manipulating Current-Induced Magnetization Switching

Authors: S. Urazhdin, H. Kurt, M. AlHajDarwish, Norman O. Birge, W. P. Pratt Jr., J. Bass

Abstract: We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the non-magnetic spacers, the relative orientations of the magnetic layers, and spin-dependent scattering properties of the interfaces and the bulk of the magnetic layers. We show how our data are exp… ▽ More We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the non-magnetic spacers, the relative orientations of the magnetic layers, and spin-dependent scattering properties of the interfaces and the bulk of the magnetic layers. We show how our data are explained in terms of current-dependent effective magnetic temperature. △ Less

Submitted 3 September, 2004; originally announced September 2004.

Comments: 6 pages, 6 figures, submitted to MMM'04 proceedings

Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au

Authors: H. Kurt, R. Loloee, W. P. Pratt Jr., J. Bass

Abstract: We compare magnetoresistances (MR) and switching currents (I_s) at room temperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoing current-induced magnetization switching (CIMS), with non-magnetic metals N = Cu, Ag, and Au. The N-metal thickness is held fixed at 10 nm. Any systematic differences in MR and I_s for the different N-metals are modest, suggesting that Ag and Au repr… ▽ More We compare magnetoresistances (MR) and switching currents (I_s) at room temperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoing current-induced magnetization switching (CIMS), with non-magnetic metals N = Cu, Ag, and Au. The N-metal thickness is held fixed at 10 nm. Any systematic differences in MR and I_s for the different N-metals are modest, suggesting that Ag and Au represent potentially viable alternatives for CIMS studies and devices to the more widely used Cu. △ Less

Submitted 28 August, 2004; originally announced August 2004.

Comments: Submitted for Magnetism Conference, MMM-04

Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface

Authors: K. Eid, H. Kurt, W. P. Pratt Jr., J. Bass

Abstract: We show that some metals and alloys (X = Cu, Ag, FeMn, or Cu and Ag combined with each other), sputtered between ferromagnetic Co and superconducting Nb, produce no change in current-perpendicular-to-plane magnetoresistance (CPP-MR) in a carefully designed CPP-spin-valve. In contrast, other metals (Ru or Au) or combinations (Cu or Ag combined with Au, Ru, or FeMn) change the CPP-MR, in some case… ▽ More We show that some metals and alloys (X = Cu, Ag, FeMn, or Cu and Ag combined with each other), sputtered between ferromagnetic Co and superconducting Nb, produce no change in current-perpendicular-to-plane magnetoresistance (CPP-MR) in a carefully designed CPP-spin-valve. In contrast, other metals (Ru or Au) or combinations (Cu or Ag combined with Au, Ru, or FeMn) change the CPP-MR, in some cases even reversing its sign. We ascribe these changes to activation of magnetic scattering anisotropies at a ferromagnetic/superconducting interface, apparently by strong spin-flip** between the Co and Nb layers. △ Less

Submitted 16 April, 2004; originally announced April 2004.

Comments: 4 pages, 4 figures

Controlled normal and inverse magnetoresistance and current-driven magnetization switching in magnetic nanopillars

Authors: M. AlHajDarwish, H. Kurt, S. Urazhdin, A. Fert, R. Loloee, W. P. Pratt Jr., J. Bass

Abstract: Combining pairs of ferromagnetic metals with different signs of scattering anisotropies, let us independently invert the magnetoresistance and the direction of current-driven switching in ferromagnetic/non-magnetic/ferromagnetic metal nanopillars. We show all four combinations of normal and inverse behaviors, at both room temperature and 4.2K. In all cases studied, the direction of switching is… ▽ More Combining pairs of ferromagnetic metals with different signs of scattering anisotropies, let us independently invert the magnetoresistance and the direction of current-driven switching in ferromagnetic/non-magnetic/ferromagnetic metal nanopillars. We show all four combinations of normal and inverse behaviors, at both room temperature and 4.2K. In all cases studied, the direction of switching is set by the net scattering anisotropy of the fixed (polarizing) ferromagnet. We provide simple arguments for what we see. △ Less

Submitted 18 December, 2003; originally announced December 2003.

Comments: 4 pages, 5 figures, submitted to PRL

Current-Driven Switching in Magnetic Multilayer Nanopillars

Authors: S. Urazhdin, Norman O. Birge, W. P. Pratt Jr., J. Bass

Abstract: We summarize our recent findings on how the current-driven magnetization switching in nanofabricated magnetic multilayers is affected by an applied magnetic field, changes of temperature, magnetic coupling between the ferromagnetic layers, variations in the multilayer structure, and the relative rotation of the layers' magnetizations. We show how these results can be interpreted with a model des… ▽ More We summarize our recent findings on how the current-driven magnetization switching in nanofabricated magnetic multilayers is affected by an applied magnetic field, changes of temperature, magnetic coupling between the ferromagnetic layers, variations in the multilayer structure, and the relative rotation of the layers' magnetizations. We show how these results can be interpreted with a model describing current-driven excitations as an effective current-dependent magnetic temperature. △ Less

Submitted 11 December, 2003; originally announced December 2003.

Comments: 6 pages, 6 figures To be published in JAP, MMM'04 proceedings

Studies of dc Current-Driven Switching in Py/N/Py magnetic nanopillars

Authors: S. Urazhdin, W. P. Pratt Jr., J. Bass

Abstract: We provide new data on current-driven switching in Permalloy (Py = Ni84Fe16) based nanopillars at room temperature and 4.2K that confirm and extend previously published work. We present data for both uncoupled and antiferromagnetically coupled samples. The latter confirm prior results for Co/Cu/Co. We show that inserting sufficiently strong spin-flip-scattering into the Cu layer eliminates hyste… ▽ More We provide new data on current-driven switching in Permalloy (Py = Ni84Fe16) based nanopillars at room temperature and 4.2K that confirm and extend previously published work. We present data for both uncoupled and antiferromagnetically coupled samples. The latter confirm prior results for Co/Cu/Co. We show that inserting sufficiently strong spin-flip-scattering into the Cu layer eliminates hysteretic current-driven switching. This result may have ramifications for understanding current-driven switching. △ Less

Submitted 2 December, 2003; originally announced December 2003.

Comments: ISAMT'03 (Taiwan) proceedings, to be published in JMMM

Inverted current-driven switching in Fe(Cr)/Cr/Fe(Cr) nanopillars

Authors: M. AlHajDarwish, A. Fert, W. P. Pratt Jr, J. Bass

Abstract: From both theory and experiment, scattering of minority electrons is expected to be weaker than scattering of majority electrons in both dilute Fe(Cr) alloys and at Fe(Cr)/Cr interfaces. We show that Fe(Cr)/Cr/Fe(Cr) trilayer nanopillars display a normal magnetoresistance--i.e., largest resistance at low magnetic fields and smallest at high fields, but an inverted current-driven switching--i.e.,… ▽ More From both theory and experiment, scattering of minority electrons is expected to be weaker than scattering of majority electrons in both dilute Fe(Cr) alloys and at Fe(Cr)/Cr interfaces. We show that Fe(Cr)/Cr/Fe(Cr) trilayer nanopillars display a normal magnetoresistance--i.e., largest resistance at low magnetic fields and smallest at high fields, but an inverted current-driven switching--i.e., positive current flowing from the fixed to the reversing layer switches the trilayer from higher to lower resistance, and negative current switches it from lower to higher. △ Less

Submitted 3 November, 2003; originally announced November 2003.

Comments: 3 pages, 3 figs., accepted for J. Magn. Magn. Mat., MMM/Intermag Conf. 2004

Studies of Current-Driven Excitations in Co/Cu/Co Trilayer Nanopillars

Authors: S. Urazhdin, Norman O. Birge, W. P. Pratt Jr, J. Bass

Abstract: We measure the dynamic resistance of a Co/Cu/Co trilayer nanopillar at varied magnetic field $H$ and current $I$. The resistance displays the usual behavior, almost symmetric in $H$, both when magnetization switching is hysteretic at small $I,H$, and reversible at larger $I,H$. We show differences in the $I,H$ magnetization stability diagram measured by holding $I$ fixed and varying $H$ and vice… ▽ More We measure the dynamic resistance of a Co/Cu/Co trilayer nanopillar at varied magnetic field $H$ and current $I$. The resistance displays the usual behavior, almost symmetric in $H$, both when magnetization switching is hysteretic at small $I,H$, and reversible at larger $I,H$. We show differences in the $I,H$ magnetization stability diagram measured by holding $I$ fixed and varying $H$ and vice versa. We also show how the peak in $dV/dI$ associated with telegraph noise in the reversible switching regime, is calculated from the telegraph noise variations with $I$. Lastly, we show data for a similar sample that displays behavior asymmetric in $H$, and a negative reversible switching peak instead of a usual positive one. △ Less

Submitted 20 October, 2003; originally announced October 2003.

Comments: To appear in the proceedings of the NATO advanced research workshop (2003)

Current-driven excitations in magnetic multilayers: a brief review

Authors: J. Bass, S. Urazhdin, Norman O. Birge, W. P. Pratt Jr

Abstract: In 1996, Berger and Slonczewski independently predicted that a large enough spin-polarized dc current density sent perpendicularly through a ferromagnetic layer could produce magnetic excitations (spin-waves) or reversal of magnetization (switching). In the past few years, both current-driven switching and current-driven excitation of spin-waves have been observed. The switching is of potential… ▽ More In 1996, Berger and Slonczewski independently predicted that a large enough spin-polarized dc current density sent perpendicularly through a ferromagnetic layer could produce magnetic excitations (spin-waves) or reversal of magnetization (switching). In the past few years, both current-driven switching and current-driven excitation of spin-waves have been observed. The switching is of potential technological interest for direct 'writing' of magnetic random access memory (MRAM) or magnetic media. The spin-wave generation could provide a new source of dc generated microwave radiation. We describe what has been learned experimentally about these two related phenomena, and some models being tested to explain these observations. △ Less

Submitted 20 October, 2003; originally announced October 2003.

Comments: 5 pages, 7 figures, expected to appear in conf. proceedings

Switching Current vs. Magnetoresistance in Magnetic Multilayer Nanopillars

Authors: S. Urazhdin, Norman O. Birge, W. P. Pratt Jr., J. Bass

Abstract: We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the electrodes, giving increased magnetoresistance. Second, we insert a spacer with a short spin-diffusion length between the magnetic layers, decreasing the magnetor… ▽ More We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the electrodes, giving increased magnetoresistance. Second, we insert a spacer with a short spin-diffusion length between the magnetic layers, decreasing the magnetoresistance. Third, we vary the angle between layer magnetizations. In all cases, we find an approximately linear dependence between magnetoresistance and inverse switching current. We give a qualitative explanation for the observed behaviors, and suggest some ways in which the switching currents may be reduced. △ Less

Submitted 8 September, 2003; originally announced September 2003.

Comments: 3 pages, 4 figures

Effect of Interlayer Coupling on Current-Assisted Magnetization Switching in Nanopillars

Authors: S. Urazhdin, W. P. Pratt Jr, J. Bass

Abstract: We show that dipole-field induced antiferromagnetic coupling, or RKKY ferromagnetic coupling, between Co layers can strongly affect the low magnetic field switching behavior of Co/Cu/Co nanopillars. Whereas current-assisted switching at low fields in uncoupled nanopillars is always hysteretic, strong coupling of either kind can change the switching to non-hysteretic (reversible). These differenc… ▽ More We show that dipole-field induced antiferromagnetic coupling, or RKKY ferromagnetic coupling, between Co layers can strongly affect the low magnetic field switching behavior of Co/Cu/Co nanopillars. Whereas current-assisted switching at low fields in uncoupled nanopillars is always hysteretic, strong coupling of either kind can change the switching to non-hysteretic (reversible). These differences can be understood with a simple picture of current-assisted thermal activation over a barrier. △ Less

Submitted 12 April, 2003; originally announced April 2003.

Comments: 2 pages, 2 figures

Effect of Antiferromagnetic Interlayer Coupling on Current-Assisted Magnetization Switching

Authors: S. Urazhdin, H. Kurt, W. P. Pratt Jr, J. Bass

Abstract: We compare magnetization switching in Co/Cu/Co nanopillars with uncoupled and dipole-field coupled Co layers. In uncoupled nanopillars, current-driven switching is hysteretic at low magnetic field H and changes to reversible, characterized by telegraph noise, at high H. We show that dipolar coupling both affects the switching current and causes the switching to become reversible at small H. The… ▽ More We compare magnetization switching in Co/Cu/Co nanopillars with uncoupled and dipole-field coupled Co layers. In uncoupled nanopillars, current-driven switching is hysteretic at low magnetic field H and changes to reversible, characterized by telegraph noise, at high H. We show that dipolar coupling both affects the switching current and causes the switching to become reversible at small H. The coupling thus changes the switching to reversible, hysteretic, and then reversible again as H increases. We describe our results in terms of current-assisted thermal activation. △ Less

Submitted 28 March, 2003; originally announced March 2003.

Comments: 3 pages, 3 figures

Current-Driven Magnetic Excitations in Permalloy-Based Multilayer Nanopillars

Authors: S. Urazhdin, Norman O. Birge, W. P. Pratt Jr, J. Bass

Abstract: We study current-driven magnetization switching in nanofabricated Ni84Fe16/Cu/Ni84Fe16 trilayers at 295 K and 4.2 K. The shape of the hysteretic switching diagram at low magnetic field changes from 295 K to 4.2 K. The reversible behavior at higher field involves two phenomena, a threshold current for magnetic excitations closely correlated with the switching current, and a peak in differential r… ▽ More We study current-driven magnetization switching in nanofabricated Ni84Fe16/Cu/Ni84Fe16 trilayers at 295 K and 4.2 K. The shape of the hysteretic switching diagram at low magnetic field changes from 295 K to 4.2 K. The reversible behavior at higher field involves two phenomena, a threshold current for magnetic excitations closely correlated with the switching current, and a peak in differential resistance characterized by telegraph noise, with average period that decreases exponentially with current and shifts with temperature. We interpret both static and dynamic results at 295 K and 4.2 K in terms of thermal activation over a potential barrier, with a current dependent effective magnetic temperature. △ Less

Submitted 20 May, 2003; v1 submitted 8 March, 2003; originally announced March 2003.

Comments: 4 pages, 4 Figures