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Topological Surface Magnetism and Neel Vector Control in a Magnetoelectric Antiferromagnet
Authors:
Kai Du,
Xianghan Xu,
Choongjae Won,
Kefeng Wang,
Scott A. Crooker,
Sylvie Rangan,
Robert Bartynski,
Sang-Wook Cheong
Abstract:
Antiferromagnetic states with no stray magnetic fields can enable high-density ultra-fast spintronic technologies. However, the detection and control of antiferromagnetic Neel vectors remain challenging. Linear magnetoelectric antiferromagnets (LMAs) may provide new pathways, but applying simultaneous electric and magnetic fields, necessary to control Neel vectors in LMAs, is cumbersome and imprac…
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Antiferromagnetic states with no stray magnetic fields can enable high-density ultra-fast spintronic technologies. However, the detection and control of antiferromagnetic Neel vectors remain challenging. Linear magnetoelectric antiferromagnets (LMAs) may provide new pathways, but applying simultaneous electric and magnetic fields, necessary to control Neel vectors in LMAs, is cumbersome and impractical for most applications. Herein, we show that Cr2O3, a prototypical room-temperature LMA, carries a topologically-protected surface magnetism in all surfaces, which stems from intrinsic surface electric fields due to band bending, combined with the bulk linear magnetoelectricity. Consequently, bulk Neel vectors with zero bulk magnetization can be simply tuned by magnetic fields through controlling the magnetizations associated with the surface magnetism. Our results imply that the surface magnetizations discovered in Cr2O3 should be also present in all LMAs.
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Submitted 3 April, 2023;
originally announced April 2023.
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The intrinsic (trap-free) transistors based on perovskite single crystals with self-passivated surfaces
Authors:
V. Bruevich,
L. Kasaei,
S. Rangan,
H. Hijazi,
Z. Zhang,
T. Emge,
E. Andrei,
R. A. Bartynski,
L. C. Feldman,
V. Podzorov
Abstract:
Lead-halide perovskites emerged as novel semiconducting materials suitable for a variety of optoelectronic applications. However, fabrication of reliable perovskite field-effect transistors (FETs), the devices necessary for the fundamental and applied research on charge transport properties of this class of materials, has proven challenging. Here we demonstrate high-performance perovskite FETs bas…
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Lead-halide perovskites emerged as novel semiconducting materials suitable for a variety of optoelectronic applications. However, fabrication of reliable perovskite field-effect transistors (FETs), the devices necessary for the fundamental and applied research on charge transport properties of this class of materials, has proven challenging. Here we demonstrate high-performance perovskite FETs based on epitaxial, single crystalline thin films of cesium lead bromide (CsPbBr3). An improved vapor-phase epitaxy has allowed growing truly large-area, atomically flat films of this perovskite with excellent structural and surface properties. FETs based on these CsPbBr3 films exhibit textbook transistor characteristics, with a very low hysteresis and high intrinsic charge carrier mobility. Availability of such high-performance devices has allowed the study of Hall effect in perovskite FETs for the first time. Our magneto-transport measurements show that the charge carrier mobility of CsPbBr3 FETs increases on cooling, from ~ 30 cm2V-1s-1 at room temperature, to ~ 250 cm2V-1s-1 at 50 K, exhibiting a band transport mostly limited by phonon scattering. The epitaxial growth and FET fabrication methodologies described here can be naturally extended to other perovskites, including the hybrid ones, thus representing a technological leap forward, overcoming the performance bottleneck in research on perovskite FETs.
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Submitted 24 December, 2021;
originally announced December 2021.
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Chemical interaction, space-charge layer and molecule charging energy for metal oxide / organic interfaces
Authors:
José I. Martínez,
Fernando Flores,
José Ortega,
Sylvie Rangan,
Charles Ruggieri,
Robert A. Bartynski
Abstract:
Three driving forces control the energy level alignment between transition-metal oxides and organic materials: the chemical interaction between the two materials, the organic electronegativity and the possible space charge layer formed in the oxide. This is illustrated in this letter by analyzing experimentally and theoretically a paradigmatic case, the TiO2(110) / TCNQ interface: due to the chemi…
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Three driving forces control the energy level alignment between transition-metal oxides and organic materials: the chemical interaction between the two materials, the organic electronegativity and the possible space charge layer formed in the oxide. This is illustrated in this letter by analyzing experimentally and theoretically a paradigmatic case, the TiO2(110) / TCNQ interface: due to the chemical interaction between the two materials, the organic electron affinity level is located below the Fermi energy of the n-doped TiO2. Then, one electron is transferred from the oxide to this level and a space charge layer is developed in the oxide inducing an important increase in the interface dipole and in the oxide work function.
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Submitted 26 February, 2015;
originally announced February 2015.
