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Spatially-Modulated Silicon Interface Energetics via Hydrogen Plasma-Assisted Atomic Layer Deposition of Ultrathin Alumina
Authors:
Alex Henning,
Johannes D. Bartl,
Lukas Wolz,
Maximilian Christis,
Felix Rauh,
Michele Bissolo,
Theresa Grünleitner,
Johanna Eichhorn,
Patrick Zeller,
Matteo Amati,
Luca Gregoratti,
Jonathan J. Finley,
Bernhard Rieger,
Martin Stutzmann,
Ian D. Sharp
Abstract:
Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on reproducible and scalable processes for interface manipulation of 3D structured surfaces on the atomic scale. While ALD allows the synthesis of conformal films at low temperature with utmost control over the thickness, atomically-defined closed coatings and surface modi…
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Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on reproducible and scalable processes for interface manipulation of 3D structured surfaces on the atomic scale. While ALD allows the synthesis of conformal films at low temperature with utmost control over the thickness, atomically-defined closed coatings and surface modifications are still extremely difficult to achieve because of three-dimensional growth during nucleation. Here, we present a route towards sub-nanometer thin and continuous aluminum oxide (AlOx) coatings on silicon (Si) substrates for the spatial control of the surface charge density and interface energetics. We use trimethylaluminum (TMA) in combination with remote hydrogen plasma instead of a gas-phase oxidant for the transformation of silicon oxide into alumina (AlOx). During the initial ALD cycles, TMA reacts with the surface oxide (SiO2) on silicon until there is a saturation of bindings sites, after which the oxygen from the underlying surface oxide is consumed, thereby transforming the silicon oxide into Si capped with AlOx. Depending on the number of ALD cycles, the SiO2 can be partially or fully transformed, which we exploit to create sub-nanometer thin and continuous AlOx layers deposited in selected regions defined by lithographic patterning. The resulting patterned surfaces are characterized by lateral AlOx/SiO2 interfaces possessing step heights as small as 0.3 nm and surface potential steps in excess of 0.4 V. In addition, the introduction of fixed negative charges of $9 \times 10^{12}$ cm$^{-2}$ enables modulation of the surface band bending, which is relevant to the field-effect passivation of Si and low-impedance charge transfer across contact interfaces.
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Submitted 24 September, 2022; v1 submitted 29 October, 2021;
originally announced November 2021.
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Surface NMR using quantum sensors in diamond
Authors:
Kristina S. Liu,
Alex Henning,
Markus W. Heindl,
Robin D. Allert,
Johannes D. Bartl,
Ian D. Sharp,
Roberto Rizzato,
Dominik B. Bucher
Abstract:
Characterization of the molecular properties of surfaces under ambient or chemically reactive conditions is a fundamental scientific challenge. Moreover, many traditional analytical techniques used for probing surfaces often lack dynamic or molecular selectivity, which limits their applicability for mechanistic and kinetic studies under realistic chemical conditions. Nuclear magnetic resonance spe…
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Characterization of the molecular properties of surfaces under ambient or chemically reactive conditions is a fundamental scientific challenge. Moreover, many traditional analytical techniques used for probing surfaces often lack dynamic or molecular selectivity, which limits their applicability for mechanistic and kinetic studies under realistic chemical conditions. Nuclear magnetic resonance spectroscopy (NMR) is a widely used technique and would be ideal for probing interfaces due to the molecular information it provides noninvasively. However, it lacks the sensitivity to probe the small number of spins at surfaces. Here, we use nitrogen vacancy (NV) centers in diamond as quantum sensors to optically detect nuclear magnetic resonance signals from chemically modified aluminum oxide surfaces, prepared with atomic layer deposition (ALD). With the surface NV-NMR technique, we are able to monitor in real-time the formation kinetics of a self assembled monolayer (SAM) based on phosphonate anchoring chemistry to the surface. This demonstrates the capability of quantum sensors as a new surface-sensitive tool with sub-monolayer sensitivity for in-situ NMR analysis with the additional advantage of a strongly reduced technical complexity.
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Submitted 29 March, 2021;
originally announced March 2021.
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Aluminum Oxide at the Monolayer Limit via Oxidant-free Plasma-Assisted Atomic Layer Deposition on GaN
Authors:
Alex Henning,
Johannes D. Bartl,
Andreas Zeidler,
Simon Qian,
Oliver Bienek,
Chang-Ming Jiang,
Claudia Paulus,
Bernhard Rieger,
Martin Stutzmann,
Ian D. Sharp
Abstract:
Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self-limiting nature of the chemical reactions during ALD provides excellent control over the layer thickness. However, in contrast to idealized growth models, it is experimentally challe…
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Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self-limiting nature of the chemical reactions during ALD provides excellent control over the layer thickness. However, in contrast to idealized growth models, it is experimentally challenging to create continuous monolayers by ALD because surface inhomogeneities and precursor steric interactions result in island growth during film nucleation. Thus, the ability to create pin-hole free monolayers by ALD would offer new opportunities for controlling interfacial charge and mass transport in semiconductor devices, as well as for tailoring surface chemistry. Here, we report full encapsulation of c-plane gallium nitride (GaN) with an ultimately thin (~3 Å) aluminum oxide (AlOx) monolayer, which is enabled by the partial conversion of the GaN surface oxide into AlOx using a combination of trimethylaluminum deposition and hydrogen plasma exposure. Introduction of monolayer AlOx significantly modifies the physical and chemical properties of the surface, decreasing the work function and introducing new chemical reactivity to the GaN surface. This tunable interfacial chemistry is highlighted by the reactivity of the modified surface with phosphonic acids under standard conditions, which results in self-assembled monolayers with densities approaching the theoretical limit. More broadly, the presented monolayer AlOx deposition scheme can be extended to other dielectrics and III-V-based semiconductors, with significant relevance for applications in optoelectronics, chemical sensing, and (photo)electrocatalysis.
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Submitted 6 February, 2021;
originally announced February 2021.
