Showing 1–6 of 6 results for author: Barthold, P

Magnetoresistance in a High Mobility Two-Dimensional Electron Gas

Authors: L. Bockhorn, P. Barthold, D. Schuh, W. Wegscheider, R. J. Haug

Abstract: In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes for increasing the temperature. An additional density dependent factor is introduced to be able to fit the par… ▽ More In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes for increasing the temperature. An additional density dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction. △ Less

Submitted 1 December, 2010; originally announced December 2010.

Comments: 4 pages, 4 figures

Mobilities and Scattering Times in Decoupled Graphene Monolayers

Authors: H. Schmidt, T. Luedtke, P. Barthold, R. J. Haug

Abstract: Folded single layer graphene forms a system of two decoupled monolayers being only a few Angstroms apart. Using magnetotransport measurements we investigate the electronic properties of the two layers conducting in parallel. We show a method to obtain the mobilities for the individual layers despite them being jointly contacted. The mobilities in the upper layer are significantly larger than in… ▽ More Folded single layer graphene forms a system of two decoupled monolayers being only a few Angstroms apart. Using magnetotransport measurements we investigate the electronic properties of the two layers conducting in parallel. We show a method to obtain the mobilities for the individual layers despite them being jointly contacted. The mobilities in the upper layer are significantly larger than in the bottom one indicating weaker substrate influence. This is confirmed by larger transport and quantum scattering times in the top layer. Analyzing the temperature dependence of the Shubnikov-de Haas oscillations effective masses and corresponding Fermi velocities are obtained yielding reduced values down to 66 percent in comparison to monolayers. △ Less

Submitted 11 January, 2010; v1 submitted 2 December, 2009; originally announced December 2009.

Comments: 4 pages, 5 figures

Tunable Graphene System with Two Decoupled Monolayers

Authors: H. Schmidt, T. Luedtke, P. Barthold, E. McCann, V. I. Falko, R. J. Haug

Abstract: The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport… ▽ More The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these newly-developed devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nano-meter scale separation between them. △ Less

Submitted 29 September, 2008; originally announced September 2008.

Comments: 4 Pages, 4 Fugures

Journal ref: Appl. Phys. Lett. 93, 172108 (2008)

Nanomachining of multilayer graphene using an atomic force microscope

Authors: P. Barthold, T. Luedtke, R. J. Haug

Abstract: An atomic force microscope is used to structure a film of multilayer graphene. The resistance of the sample was measured in-situ during nanomachining a narrow trench. We found a reversible behavior in the electrical resistance which we attribute to the movement of dislocations. After several attempts also permanent changes are observed. Two theoretical approaches are presented to approximate the… ▽ More An atomic force microscope is used to structure a film of multilayer graphene. The resistance of the sample was measured in-situ during nanomachining a narrow trench. We found a reversible behavior in the electrical resistance which we attribute to the movement of dislocations. After several attempts also permanent changes are observed. Two theoretical approaches are presented to approximate the measured resistance. △ Less

Submitted 25 July, 2008; originally announced July 2008.

Comments: 5 pages, 4 figures

Nanomachining of mesoscopic graphite

Authors: P. Barthold, T. Luedtke, R. J. Haug

Abstract: An atomic force microscope is used to structure a film of multilayer graphene. The resistance of the sample was measured in-situ during nanomachining narrow trenches. We found a reversible behavior in the electrical resistance which we attribute to the movement of dislocations. After several attempts also permanent changes are observed. An atomic force microscope is used to structure a film of multilayer graphene. The resistance of the sample was measured in-situ during nanomachining narrow trenches. We found a reversible behavior in the electrical resistance which we attribute to the movement of dislocations. After several attempts also permanent changes are observed. △ Less

Submitted 17 March, 2008; originally announced March 2008.

Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots

Authors: P. Barthold, F. Hohls, N. Maire, K. Pierz, R. J. Haug

Abstract: We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots. We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots. △ Less

Submitted 20 March, 2006; originally announced March 2006.

Journal ref: Phys. Rev. Lett. 96, 246804 (2006)