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Optomechanical cavities based on epitaxial GaP on nominally (001)-oriented Si
Authors:
Paula Mouriño,
Laura Mercadé,
Miguel Sinusía Lozano,
Raquel Resta,
Amadeu Griol,
Karim Ben Saddik,
Enrique Barrigón,
Sergio Fernández-Garrido,
Basilio Javier García,
Alejandro Martínez,
Víctor J. Gómez
Abstract:
Gallium phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectric properties. Usually, GaP is grown epitaxially on III-V substrates to keep its crystallinity and later transferred to silicon wafers for further processing. Here, an alternative promising route for the fabrication of op…
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Gallium phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectric properties. Usually, GaP is grown epitaxially on III-V substrates to keep its crystallinity and later transferred to silicon wafers for further processing. Here, an alternative promising route for the fabrication of optomechanical (OM) cavities on GaP epitaxially grown on nominally (001)-oriented Si is introduced by using a two-step process consisting of a low-temperature etching of GaP followed by selective etching of the underneath silicon. The low-temperature (-30 $^o$C) during the dry-etching of GaP hinders the lateral etching rate, preserving the pattern with a deviation between the design and the pattern in the GaP layer lower than 5 %, avoiding the complex process of transferring and bonding a GaP wafer to a silicon-on-insulator wafer. To demonstrate the quality and feasibility of the proposed fabrication route, suspended OM cavities are fabricated and experimentally characterized. The cavities show optical quality factors between 10$^3$ and 10$^4$, and localized mechanical resonances at frequencies around 3.1 GHz. Both optical and mechanical resonances are close to those previously reported on crystalline GaP structures. These results suggest a simple and low-cost way to build GaP-based photonic devices directly integrated on industry-standard Si(001) photonic wafers.
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Submitted 28 March, 2024;
originally announced March 2024.
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Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells
Authors:
Laura Barrutia,
Ivan García,
Enrique Barrigon,
Mario Ochoa,
Carlos Algora,
Ignacio Rey-Stolle
Abstract:
This paper addresses the influence of III-V nucleation routines on Ge substrates for the growth of high efficiency multijunction solar cells. Three exemplary nucleation routines with differences in thickness and temperature were evaluated. The resulting open circuit voltage of triple-junction solar cells with these designs is significantly affected (up to 50 mV for the best optimization routine),…
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This paper addresses the influence of III-V nucleation routines on Ge substrates for the growth of high efficiency multijunction solar cells. Three exemplary nucleation routines with differences in thickness and temperature were evaluated. The resulting open circuit voltage of triple-junction solar cells with these designs is significantly affected (up to 50 mV for the best optimization routine), whereas minimal differences in short circuit current are observed. Electroluminescence measurements show that both the Ge bottom cell and the Ga(In)As middle cell present a VOC gain of 25 mV each. This result indicates that the first stages of the growth not only affect the Ge subcell itself but also to subsequent subcells. This study highlights the impact of the nucleation routine design in the performance of high efficiency multijunction solar cell based on Ge substrates.
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Submitted 2 July, 2020;
originally announced July 2020.
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Hot-Carrier Separation in Heterostructure Nanowires observed by Electron-Beam Induced Current
Authors:
Jonatan Fast,
Enrique Barrigon,
Mukesh Kumar,
Yang Chen,
Lars Samuelson,
Magnus Borgström,
Anders Gustafsson,
Steven Limpert,
Adam Burke,
Heiner Linke
Abstract:
The separation of hot carriers in semiconductors is of interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages for effective hot-carrier separation such as: a high degree of control and flexibility in heterostructure-based band engineering, increased hot-carrier temperatures compared to bulk, and…
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The separation of hot carriers in semiconductors is of interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages for effective hot-carrier separation such as: a high degree of control and flexibility in heterostructure-based band engineering, increased hot-carrier temperatures compared to bulk, and a geometry well suited for local control of light absorption. Indeed, InAs nanowires with a short InP energy barrier have been observed to produce electric power under global illumination, with an open-circuit voltage exceeding the Shockley-Queisser limit. To understand this behaviour in more detail, it is necessary to maintain control over the precise location of electron-hole pair-generation in the nanowire. In this work we perform electron-beam induced current measurements with high spatial resolution, and demonstrate the role of the InP barrier in extracting energetic electrons. We interprete the results in terms of hot-carrier separation, and extract estimates of the hot carrier mean free path.
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Submitted 3 April, 2020;
originally announced April 2020.
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Three-dimensional imaging of beam-induced biasing of InP/GaInP tunnel diodes
Authors:
Cristina Cordoba,
Xulu Zeng,
Daniel Wolf,
Axel Lubk,
Enrique Barrigón,
Magnus T. Borgström,
Karen L. Kavanagh
Abstract:
Electron Holographic Tomography was used to obtain 3-dimensional reconstructions of the morphology and electrostatic potential gradient of axial GaInP/InP nanowire tunnel diodes. Crystal growth was carried out in two opposite directions: GaInP:Zn/InP:S and InP:Sn/GaInP:Zn, using Zn as the p-type dopant in the GaInP, but with changes to the n-type dopant (S or Sn) in the InP. Secondary electron and…
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Electron Holographic Tomography was used to obtain 3-dimensional reconstructions of the morphology and electrostatic potential gradient of axial GaInP/InP nanowire tunnel diodes. Crystal growth was carried out in two opposite directions: GaInP:Zn/InP:S and InP:Sn/GaInP:Zn, using Zn as the p-type dopant in the GaInP, but with changes to the n-type dopant (S or Sn) in the InP. Secondary electron and electron beam induced current images obtained using scanning electron microscopy indicated the presence of p-n junctions in both cases and current-voltage characteristics measured via lithographic contacts showed the negative differential resistance, characteristic of band-to-band tunneling, for both diodes. EHT measurements confirmed a short depletion width in both cases ($21 \pm 3$ nm), but different built-in potentials, $V_{bi}$, of 1.0 V for the p-type (Zn) to n-type (S) transition, and 0.4 V for both were lower than the expected 1.5 V for these junctions, if degenerately-doped. Charging induced by the electron beam was evident in phase images which showed non-linearity in the surrounding vacuum, most severe in the case of the nanowire grounded at the \emph{p}-type Au contact. We attribute their lower $V_{bi}$ to asymmetric secondary electron emission, beam-induced current biasing and poor grounding contacts.
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Submitted 15 October, 2019;
originally announced October 2019.
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Combined photo- and electroreflectance of multijunction solar cells enabled by subcell electric coupling
Authors:
D. Fuertes Marrón,
E. Barrigón,
M. Ochoa,
I. Artacho
Abstract:
Electric coupling between subcells of a monolithically grown multijunction solar cell in short circuit allows their simultaneous and independent characterization by means of photo- and electroreflectance. The photovoltage generated by selective absorption of the pump beam in a given subcell during photoreflectance measurements results in reverse biasing the complementary subunits at the modulation…
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Electric coupling between subcells of a monolithically grown multijunction solar cell in short circuit allows their simultaneous and independent characterization by means of photo- and electroreflectance. The photovoltage generated by selective absorption of the pump beam in a given subcell during photoreflectance measurements results in reverse biasing the complementary subunits at the modulation frequency set on the pump illumination. Such voltage bias modulation acts then as external perturbation on the complementary subcells. The spectral separation of the different subcell absorption ranges permits the probe beam to record in a single spectrum the response of the complete device as a combination of photo- and electroreflectance, thereby providing access for diagnosis of subcells on an individual basis. This form of modulation spectroscopy is demonstrated on a GaInP/GaAs tandem solar cell.
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Submitted 10 April, 2019;
originally announced April 2019.
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InP/InAsP Nanowire-based Spatially Separate Absorption and Multiplication Avalanche Photodetectors
Authors:
Vishal Jain,
Magnus Heurlin,
Enrique Barrigon,
Lorenzo Bosco,
Ali Nowzari,
Shishir Shroff,
Virginia Boix,
Mohammad Karimi,
Reza J. Jam,
Alexander Berg,
Lars Samuelson,
Magnus T. Borgström,
Federico Capasso,
Håkan Pettersson
Abstract:
Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication region is implemented in a large bandgap material is desired to avoid detrimental Zener tunneling leakage currents, a concern otherwise in smaller bandgap materials…
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Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication region is implemented in a large bandgap material is desired to avoid detrimental Zener tunneling leakage currents, a concern otherwise in smaller bandgap materials required for absorption at 1.3/1.55 um. Self-assembled III-V semiconductor nanowires offer key advantages such as enhanced absorption due to optical resonance effects, strain-relaxed heterostructures and compatibility with main-stream silicon technology. Here, we present electrical and optical characteristics of single InP and InP/InAsP nanowire APD structures. Temperature-dependent breakdown characteristics of p+-n-n+ InP nanowire devices were investigated first. A clear trap-induced shift in breakdown voltage was inferred from I-V measurements. An improved contact formation to the p+-InP segment was observed upon annealing, and its effect on breakdown characteristics was investigated. The bandgap in the absorption region was subsequently varied from pure InP to InAsP to realize spatially separate absorption and multiplication APDs in heterostructure nanowires. In contrast to the homojunction APDs, no trap-induced shifts were observed for the heterostructure APDs. A gain of 12 was demonstrated for selective optical excitation of the InAsP segment. Additional electron beam-induced current measurements were carried out to investigate the effect of local excitation along the nanowire on the I-V characteristics. Our results provide important insight for optimization of avalanche photodetector devices based on III-V nanowires.
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Submitted 3 June, 2017;
originally announced June 2017.
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Application of photoreflectance to advanced multilayer structures for photovoltaics
Authors:
D. Fuertes Marrón,
E. Cánovas,
I. Artacho,
C. R. Stanley,
M. Steer,
T. Kaizu,
Y. Shoji,
N. Ahsan,
Y. Okada,
E. Barrigón,
I. Rey-Stolle,
C. Algora,
A. Martí,
A. Luque
Abstract:
Photoreflectance (PR) is a convenient characterization tool able to reveal optoelectronic properties of semiconductor materials and structures. It is a simple non-destructive and contactless technique which can be used in air at room temperature. We will present experimental results of the characterization carried out by means of PR on different types of advanced photovoltaic (PV) structures, incl…
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Photoreflectance (PR) is a convenient characterization tool able to reveal optoelectronic properties of semiconductor materials and structures. It is a simple non-destructive and contactless technique which can be used in air at room temperature. We will present experimental results of the characterization carried out by means of PR on different types of advanced photovoltaic (PV) structures, including quantum-dot-based prototypes of intermediate band solar cells, quantum-well structures, highly mismatched alloys, and III-V-based multi-junction devices, thereby demonstrating the suitability of PR as a powerful diagnostic tool. Examples will be given to illustrate the value of this spectroscopic technique for PV including (i) the analysis of the PR spectra in search of critical points associated to absorption onsets; (ii) distinguishing signatures related to quantum confinement from those originating from delocalized band states; (iii) determining the intensity of the electric field related to built-in potentials at interfaces according to the Franz-Keldysh (FK) theory; and (v) determining the nature of different oscillatory PR signals among those ascribed to FK-oscillations, interferometric and photorefractive effects. The aim is to attract the interest of researchers in the field of PV to modulation spectroscopies, as they can be helpful in the analysis of their devices.
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Submitted 4 December, 2012;
originally announced December 2012.
