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Minimal evolution times for fast, pulse-based state preparation in silicon spin qubits
Authors:
Christopher K. Long,
Nicholas J. Mayhall,
Sophia E. Economou,
Edwin Barnes,
Crispin H. W. Barnes,
Frederico Martins,
David R. M. Arvidsson-Shukur,
Normann Mertig
Abstract:
Standing as one of the most significant barriers to reaching quantum advantage, state-preparation fidelities on noisy intermediate-scale quantum processors suffer from quantum-gate errors, which accumulate over time. A potential remedy is pulse-based state preparation. We numerically investigate the minimal evolution times (METs) attainable by optimizing (microwave and exchange) pulses on silicon…
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Standing as one of the most significant barriers to reaching quantum advantage, state-preparation fidelities on noisy intermediate-scale quantum processors suffer from quantum-gate errors, which accumulate over time. A potential remedy is pulse-based state preparation. We numerically investigate the minimal evolution times (METs) attainable by optimizing (microwave and exchange) pulses on silicon hardware. We investigate two state preparation tasks. First, we consider the preparation of molecular ground states and find the METs for H$_2$, HeH$^+$, and LiH to be 2.4 ns, 4.4 ns, and 27.2 ns, respectively. Second, we consider transitions between arbitrary states and find the METs for transitions between arbitrary four-qubit states to be below 50 ns. For comparison, connecting arbitrary two-qubit states via one- and two-qubit gates on the same silicon processor requires approximately 200 ns. This comparison indicates that pulse-based state preparation is likely to utilize the coherence times of silicon hardware more efficiently than gate-based state preparation. Finally, we quantify the effect of silicon device parameters on the MET. We show that increasing the maximal exchange amplitude from 10 MHz to 1 GHz accelerates the METs, e.g., for H$_2$ from 84.3 ns to 2.4 ns. This demonstrates the importance of fast exchange. We also show that increasing the maximal amplitude of the microwave drive from 884 kHz to 56.6 MHz shortens state transitions, e.g., for two-qubit states from 1000 ns to 25 ns. Our results bound both the state-preparation times for general quantum algorithms and the execution times of variational quantum algorithms with silicon spin qubits.
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Submitted 16 June, 2024;
originally announced June 2024.
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Charge qubits based on ultra-thin topological insulator films
Authors:
Kexin Zhang,
Hugo V. Lepage,
Ying Dong,
Crispin H. W. Barnes
Abstract:
We study how to use the surface states in a Bi$_{2}$Se$_{3}$ topological insulator ultra-thin film that are affected by finite size effects for the purpose of quantum computing. We demonstrate that: (i) surface states under the finite size effect can effectively form a two-level system where their energy levels lie in between the bulk energy gap and a logic qubit can be constructed, (ii) the qubit…
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We study how to use the surface states in a Bi$_{2}$Se$_{3}$ topological insulator ultra-thin film that are affected by finite size effects for the purpose of quantum computing. We demonstrate that: (i) surface states under the finite size effect can effectively form a two-level system where their energy levels lie in between the bulk energy gap and a logic qubit can be constructed, (ii) the qubit can be initialized and manipulated using electric pulses of simple forms, (iii) two-qubit entanglement is achieved through a $\sqrt{\text{SWAP}}$ operation when the two qubits are in a parallel setup, and (iv) alternatively, a Floquet state can be exploited to construct a qubit and two Floquet qubits can be entangled through a Controlled-NOT operation. The Floquet qubit offers robustness to background noise since there is always an oscillating electric field applied, and the single qubit operations are controlled by amplitude modulation of the oscillating field, which is convenient experimentally.
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Submitted 9 November, 2023;
originally announced November 2023.
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Layering and subpool exploration for adaptive Variational Quantum Eigensolvers: Reducing circuit depth, runtime, and susceptibility to noise
Authors:
Christopher K. Long,
Kieran Dalton,
Crispin H. W. Barnes,
David R. M. Arvidsson-Shukur,
Normann Mertig
Abstract:
Adaptive variational quantum eigensolvers (ADAPT-VQEs) are promising candidates for simulations of strongly correlated systems on near-term quantum hardware. To further improve the noise resilience of these algorithms, recent efforts have been directed towards compactifying, or layering, their ansatz circuits. Here, we broaden the understanding of the algorithmic layering process in three ways. Fi…
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Adaptive variational quantum eigensolvers (ADAPT-VQEs) are promising candidates for simulations of strongly correlated systems on near-term quantum hardware. To further improve the noise resilience of these algorithms, recent efforts have been directed towards compactifying, or layering, their ansatz circuits. Here, we broaden the understanding of the algorithmic layering process in three ways. First, we investigate the non-commutation relations between the different elements that are used to build ADAPT-VQE ansätze. Doing so, we develop a framework for studying and develo** layering algorithms, which produce shallower circuits. Second, based on this framework, we develop a new subroutine that can reduce the number of quantum-processor calls by optimizing the selection procedure with which a variational quantum algorithm appends ansatz elements. Third, we provide a thorough numerical investigation of the noise-resilience improvement available via layering the circuits of ADAPT-VQE algorithms. We find that layering leads to an improved noise resilience with respect to amplitude-dam** and dephasing noise, which, in general, affect idling and non-idling qubits alike. With respect to depolarizing noise, which tends to affect only actively manipulated qubits, we observe no advantage of layering.
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Submitted 22 August, 2023;
originally announced August 2023.
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Compression of metrological quantum information in the presence of noise
Authors:
Flavio Salvati,
Wilfred Salmon,
Crispin H. W. Barnes,
David R. M. Arvidsson-Shukur
Abstract:
In quantum metrology, information about unknown parameters $\mathbfθ = (θ_1,\ldots,θ_M)$ is accessed by measuring probe states $\hatρ_{\mathbfθ}$. In experimental settings where copies of $\hatρ_{\mathbfθ}$ can be produced rapidly (e.g., in optics), the information-extraction bottleneck can stem from high post-processing costs or detector saturation. In these regimes, it is desirable to compress t…
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In quantum metrology, information about unknown parameters $\mathbfθ = (θ_1,\ldots,θ_M)$ is accessed by measuring probe states $\hatρ_{\mathbfθ}$. In experimental settings where copies of $\hatρ_{\mathbfθ}$ can be produced rapidly (e.g., in optics), the information-extraction bottleneck can stem from high post-processing costs or detector saturation. In these regimes, it is desirable to compress the information encoded in $\hatρ_{\mathbfθ} \, ^{\otimes n}$ into $m<n$ copies of a postselected state: ${\hatρ_{\mathbfθ}^{\text{ps}}} \,^{\otimes m}$.
Remarkably, recent works have shown that, in the absence of noise, compression can be lossless, for $m/n$ arbitrarily small. Here, we fully characterize the family of filters that enable lossless compression. Further, we study the effect of noise on quantum-metrological information amplification. Motivated by experiments, we consider a popular family of filters, which we show is optimal for qubit probes. Further, we show that, for the optimal filter in this family, compression is still lossless if noise acts after the filter. However, in the presence of depolarizing noise before filtering, compression is lossy. In both cases, information-extraction can be implemented significantly better than simply discarding a constant fraction of the states, even in the presence of strong noise.
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Submitted 17 July, 2023;
originally announced July 2023.
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Pulse-controlled qubit in semiconductor double quantum dots
Authors:
Aleksander Lasek,
Hugo V. Lepage,
Kexin Zhang,
Thierry Ferrus,
Crispin H. W. Barnes
Abstract:
We present a numerically-optimized multipulse framework for the quantum control of a single-electron charge qubit. Our framework defines a set of pulse sequences, necessary for the manipulation of the ideal qubit basis, that avoids errors associated with excitations outside the computational subspace. A novel control scheme manipulates the qubit adiabatically, while also retaining high speed and a…
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We present a numerically-optimized multipulse framework for the quantum control of a single-electron charge qubit. Our framework defines a set of pulse sequences, necessary for the manipulation of the ideal qubit basis, that avoids errors associated with excitations outside the computational subspace. A novel control scheme manipulates the qubit adiabatically, while also retaining high speed and ability to perform a general single-qubit rotation. This basis generates spatially localized logical qubit states, making readout straightforward. We consider experimentally realistic semiconductor qubits with finite pulse rise and fall times and determine the fastest pulse sequence yielding the highest fidelity. We show that our protocol leads to improved control of a qubit. We present simulations of a double quantum dot in a semiconductor device to visualize and verify our protocol. These results can be generalized to other physical systems since they depend only on pulse rise and fall times and the energy gap between the two lowest eigenstates.
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Submitted 8 March, 2023;
originally announced March 2023.
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An adaptive Bayesian quantum algorithm for phase estimation
Authors:
Joseph G. Smith,
Crispin H. W. Barnes,
David R. M. Arvidsson-Shukur
Abstract:
Quantum-phase-estimation algorithms are critical subroutines in many applications for quantum computers and in quantum-metrology protocols. These algorithms estimate the unknown strength of a unitary evolution. By using coherence or entanglement to sample the unitary $N_{\mathrm{tot}}$ times, the variance of the estimates can scale as $O(1/{N^2_{\mathrm{tot}}})$, compared to the best ``classical''…
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Quantum-phase-estimation algorithms are critical subroutines in many applications for quantum computers and in quantum-metrology protocols. These algorithms estimate the unknown strength of a unitary evolution. By using coherence or entanglement to sample the unitary $N_{\mathrm{tot}}$ times, the variance of the estimates can scale as $O(1/{N^2_{\mathrm{tot}}})$, compared to the best ``classical'' strategy with $O(1/{N_{\mathrm{tot}}})$. The original algorithm for quantum phase estimation cannot be implemented on near-term hardware as it requires large-scale entangled probes and fault-tolerant quantum computing. Therefore, alternative algorithms have been introduced that rely on coherence and statistical inference. These algorithms produce quantum-boosted phase estimates without inter-probe entanglement. This family of phase-estimation algorithms have, until now, never exhibited the possibility of achieving optimal scaling $O(1/{N^2_{\mathrm{tot}}})$. Moreover, previous works have not considered the effect of noise on these algorithms. Here, we present a coherence-based phase-estimation algorithm which can achieve the optimal quadratic scaling in the mean absolute error and the mean squared error. In the presence of noise, our algorithm produces errors that approach the theoretical lower bound. The optimality of our algorithm stems from its adaptive nature: Each step is determined, iteratively, using a Bayesian protocol that analyses the results of previous steps.
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Submitted 2 March, 2023;
originally announced March 2023.
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Quantifying the effect of gate errors on variational quantum eigensolvers for quantum chemistry
Authors:
Kieran Dalton,
Christopher K. Long,
Yordan S. Yordanov,
Charles G. Smith,
Crispin H. W. Barnes,
Normann Mertig,
David R. M. Arvidsson-Shukur
Abstract:
Variational quantum eigensolvers (VQEs) are leading candidates to demonstrate near-term quantum advantage. Here, we conduct density-matrix simulations of leading gate-based VQEs for a range of molecules. We numerically quantify their level of tolerable depolarizing gate-errors. We find that: (i) The best-performing VQEs require gate-error probabilities between $10^{-6}$ and $10^{-4}$ ( $10^{-4}$ a…
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Variational quantum eigensolvers (VQEs) are leading candidates to demonstrate near-term quantum advantage. Here, we conduct density-matrix simulations of leading gate-based VQEs for a range of molecules. We numerically quantify their level of tolerable depolarizing gate-errors. We find that: (i) The best-performing VQEs require gate-error probabilities between $10^{-6}$ and $10^{-4}$ ( $10^{-4}$ and $10^{-2}$ with error mitigation) to predict, within chemical accuracy, ground-state energies of small molecules with $4-14$ orbitals. (ii) ADAPT-VQEs that construct ansatz circuits iteratively outperform fixed-circuit VQEs. (iii) ADAPT-VQEs perform better with circuits constructed from gate-efficient rather than physically-motivated elements. (iv) The maximally-allowed gate-error probability, $p_c$, for any VQE to achieve chemical accuracy decreases with the number $\ncx$ of noisy two-qubit gates as $p_c\approxprop\ncx^{-1}$. Additionally, $p_c$ decreases with system size, even with error mitigation, implying that larger molecules require even lower gate-errors. Thus, quantum advantage via gate-based VQEs is unlikely unless gate-error probabilities are decreased by orders of magnitude.
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Submitted 13 February, 2024; v1 submitted 8 November, 2022;
originally announced November 2022.
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An iterative quantum-phase-estimation protocol for near-term quantum hardware
Authors:
Joseph G. Smith,
Crispin H. W. Barnes,
David R. M. Arvidsson-Shukur
Abstract:
Given $N_{\textrm{tot}}$ applications of a unitary operation with an unknown phase $θ$, a large-scale fault-tolerant quantum system can {reduce} an estimate's {error} scaling from $\mathcal{O} \left[ 1 / \sqrt{N_{\textrm{tot}}} \right]$ to $\mathcal{O} \left[ 1 / {N_{\textrm{tot}}} \right]$. Owing to the limited resources available to near-term quantum devices, entanglement-free protocols have bee…
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Given $N_{\textrm{tot}}$ applications of a unitary operation with an unknown phase $θ$, a large-scale fault-tolerant quantum system can {reduce} an estimate's {error} scaling from $\mathcal{O} \left[ 1 / \sqrt{N_{\textrm{tot}}} \right]$ to $\mathcal{O} \left[ 1 / {N_{\textrm{tot}}} \right]$. Owing to the limited resources available to near-term quantum devices, entanglement-free protocols have been developed, which achieve a $\mathcal{O} \left[ \log(N_{\textrm{tot}}) / N_{\textrm{tot}} \right]$ {mean-absolute-error} scaling. Here, we propose a new two-step protocol for near-term phase estimation, with an improved {error} scaling. Our protocol's first step produces several low-{standard-deviation} estimates of $θ$, within $θ$'s parameter range. The second step iteratively hones in on one of these estimates. Our protocol's {mean absolute error} scales as $\mathcal{O} \left[ \sqrt{\log (\log N_{\textrm{tot}})} / N_{\textrm{tot}} \right]$. Furthermore, we demonstrate a reduction in the constant scaling factor and the required circuit depths: our protocol can outperform the asymptotically optimal quantum-phase estimation algorithm for realistic values of $N_{\textrm{tot}}$.
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Submitted 13 June, 2022;
originally announced June 2022.
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Engineering single donor detectors in doped silicon
Authors:
A. A. Lasek,
C. H. W. Barnes,
T. Ferrus
Abstract:
We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown. Characterisation of the device at low temperatures and in magnetic field shows single donors can be electrostatically isolated near one of the tunnel barrier w…
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We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown. Characterisation of the device at low temperatures and in magnetic field shows single donors can be electrostatically isolated near one of the tunnel barrier with either a single or a doubly occupancy. Such a model is well supported by capacitance-based simulations. Ability of using the D0 of such isolated donor as a charge detector is demonstrated by observing the charge stability diagram of a nearby and capacitively coupled semi-connected double quantum dot.
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Submitted 1 September, 2022; v1 submitted 21 November, 2021;
originally announced November 2021.
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Molecular excited state calculations with the QEB-ADAPT-VQE
Authors:
Yordan S. Yordanov,
Crispin H. W. Barnes,
David R. M. Arvidsson-Shukur
Abstract:
Calculations of molecular spectral properties, like photodissociation rates and absorption bands, rely on knowledge of the excited state energies of the molecule of interest. Protocols based on the variational quantum eigensolver (VQE) are promising candidates to calculate such energies on emerging noisy intermediate scale quantum (NISQ) computers. The successful implementation of these protocols…
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Calculations of molecular spectral properties, like photodissociation rates and absorption bands, rely on knowledge of the excited state energies of the molecule of interest. Protocols based on the variational quantum eigensolver (VQE) are promising candidates to calculate such energies on emerging noisy intermediate scale quantum (NISQ) computers. The successful implementation of these protocols on NISQ computers, relies on ansätze that can accurately approximate the molecular states and that can be implemented by shallow quantum circuits. In this paper, we introduce the excited qubit-excitation-based adaptive (e-QEB-ADAPT)-VQE protocol to calculate molecular excited state energies. The e-QEB-ADAPT-VQE constructs efficient problem-tailored ansätze by iteratively appending evolutions of qubit excitation operators. The e-QEB-ADAPT-VQE is an adaptation of the QEB-ADAPT-VQE protocol, which is designed to be independent on the choice of an initial reference state. We perform classical numerical simulations for LiH and BeH$_2$ to benchmark the performance of the e-QEB-ADAPT-VQE. We demonstrate that the e-QEB-ADAPT-VQE can construct highly accurate ansätze that require at least an order of magnitude fewer $CNOT$s than standard fixed UCC ansätze, such as the UCCSD and the GUCCSD.
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Submitted 18 October, 2021; v1 submitted 11 June, 2021;
originally announced June 2021.
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Growth and Characterisation Studies of Eu$_3$O$_4$ Thin Films Grown on Si/SiO$_2$ and Graphene
Authors:
R. O. M. Aboljadayel,
A. Ionescu,
O. J. Burton,
G. Cheglakov,
S. Hofmann,
C. H. W. Barnes
Abstract:
We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu$_3$O$_4$, thin films grown on a Si/SiO$_2$ substrate and Si/SiO$_2$/graphene using molecular beam epitaxy. The X-ray diffraction scans show that highly-textured crystalline Eu$_3$O$_4$(001) films are grown on both substrates, whereas the film deposited on graphene has a better crystallinity than that gr…
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We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu$_3$O$_4$, thin films grown on a Si/SiO$_2$ substrate and Si/SiO$_2$/graphene using molecular beam epitaxy. The X-ray diffraction scans show that highly-textured crystalline Eu$_3$O$_4$(001) films are grown on both substrates, whereas the film deposited on graphene has a better crystallinity than that grown on the Si/SiO$_2$ substrate. The SQUID measurements show that both films have a Curie temperature of about 5.5 K, with a magnetic moment of 0.0032 emu/g at 2 K. The mixed-valency of the Eu cations has been confirmed by the qualitative analysis of the depth-profile X-ray photoelectron spectroscopy measurements with the Eu$^{2+}$ : Eu$^{3+}$ ratio of 28 : 72. However, surprisingly, our films show no metamagnetic behaviour as reported for the bulk and powder form. Furthermore, the Raman spectroscopy scans show that the growth of the Eu$_3$O$_4$ thin films has no damaging effect on the underlayer graphene sheet. Therefore, the graphene layer is expected to retain its properties.
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Submitted 6 May, 2021;
originally announced May 2021.
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Table-like magnetocaloric effect and enhanced refrigerant capacity in EuO1-δ thin films
Authors:
P. Lampen,
R. Madhogaria,
N. S. Bingham,
M. H. Phan,
P. M. S. Monteiro,
N. -J. Steinke,
A. Ionescu,
C. H. W. Barnes,
H. Srikanth
Abstract:
An approach to adjusting the conduction band population for tuning the magnetic and magnetocaloric response of EuO1-δ thin films through control of oxygen vacancies (δ = 0, 0.025, and 0.09) is presented. The films each showed a paramagnetic to ferromagnetic transition around 65 K, with an additional magnetic ordering transition at higher temperatures in the oxygen deficient samples. All transition…
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An approach to adjusting the conduction band population for tuning the magnetic and magnetocaloric response of EuO1-δ thin films through control of oxygen vacancies (δ = 0, 0.025, and 0.09) is presented. The films each showed a paramagnetic to ferromagnetic transition around 65 K, with an additional magnetic ordering transition at higher temperatures in the oxygen deficient samples. All transitions are observed to be of second order. A maximum magnetic entropy change of 6.4 J/kg K over a field change of 2 T with a refrigerant capacity of 223 J/kg was found in the sample with δ = 0, and in all cases the refrigerant capacities of the thin films under study were found to exceed that reported for bulk EuO. Adjusting the oxygen content was shown to produce table-like magnetocaloric effects, desirable for ideal Ericsson-cycle magnetic refrigeration. These films are thus excellent candidates for small-scale magnetic cooling technology in the liquid nitrogen temperature range.
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Submitted 13 April, 2021;
originally announced April 2021.
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Dirac Quantum Wells at Domain Walls in Antiferromagnetic Topological Insulators
Authors:
N. B. Devlin,
T. Ferrus,
C. H. W. Barnes
Abstract:
We explore the emergence of spin-polarised flat-bands at head-to-head domain walls in a recently predicted class of antiferromagnetic topological insulators hosting planar magnetisation. We show, in the framework of quantum well physics, that by tuning the width of a domain wall one can control the functional form of the bound states appearing across it. Furthermore, we demonstrate the effect that…
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We explore the emergence of spin-polarised flat-bands at head-to-head domain walls in a recently predicted class of antiferromagnetic topological insulators hosting planar magnetisation. We show, in the framework of quantum well physics, that by tuning the width of a domain wall one can control the functional form of the bound states appearing across it. Furthermore, we demonstrate the effect that the parity of the number of layers in a multilayer sample has on the electronic dispersion. In particular, the alignment of the magnetisation vectors on the terminating surfaces of odd layer samples affords particle-hole symmetry leading to the presence of linearly dispersing topologically non-trivial states around $E = 0$. By contrast, the lack of particle-hole symmetry in even layer samples results in a gapped system, with spin-polarised flat-bands appearing either side of a band gap, with characteristic energy well within terahertz energy scales. In addition to being a versatile platform for the development of spintronic devices, when many-body interactions are accounted for we predict that these flat-bands will host strong correlations capable of driving the system into novel topological phases.
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Submitted 1 April, 2021;
originally announced April 2021.
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Determining the Proximity Effect Induced Magnetic Moment in Graphene by Polarized Neutron Reflectivity and X-ray Magnetic Circular Dichroism
Authors:
R. O. M. Aboljadayel,
C. J. Kinane,
C. A. F. Vaz,
D. M. Love,
R. S. Weatherup,
P. Braeuninger-Weimer,
M. -B. Martin,
A. Ionescu,
A. J. Caruana,
T. R. Charlton,
J. Llandro,
P. M. S. Monteiro,
C. H. W. Barnes,
S. Hofmann,
S. Langridge
Abstract:
We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotated-domain graphene in proximity with a ferromagnetic Ni film, using polarized neutron reflectivity (PNR) and X-ray magnetic circular dichroism (XMCD). The XMCD spectra at the C K-edge confirms the presence of a magnetic signal in the graphene layer and the sum rules give a magnetic moment of up to…
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We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotated-domain graphene in proximity with a ferromagnetic Ni film, using polarized neutron reflectivity (PNR) and X-ray magnetic circular dichroism (XMCD). The XMCD spectra at the C K-edge confirms the presence of a magnetic signal in the graphene layer and the sum rules give a magnetic moment of up to $\sim\,0.47\,μ$_B/C atom induced in the graphene layer. For a more precise estimation, we conducted PNR measurements. The PNR results indicate an induced magnetic moment of $\sim$ 0.53 $μ$_B/C atom at 10 K for rotated graphene and $\sim$ 0.38 $μ$_B/C atom at 10 K for epitaxial graphene. Additional PNR measurements on graphene grown on a non-magnetic Ni_9Mo_1 substrate, where no magnetic moment in graphene is measured, suggest that the origin of the induced magnetic moment is due to the opening of the graphene's Dirac cone as a result of the strong C pz-3d hybridization.
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Submitted 21 March, 2022; v1 submitted 25 January, 2021;
originally announced January 2021.
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Qubit-excitation-based adaptive variational quantum eigensolver
Authors:
Yordan S. Yordanov,
V. Armaos,
Crispin H. W. Barnes,
David R. M. Arvidsson-Shukur
Abstract:
Molecular simulations with the variational quantum eigensolver (VQE) are a promising application for emerging noisy intermediate-scale quantum computers. Constructing accurate molecular ansätze that are easy to optimize and implemented by shallow quantum circuits is crucial for the successful implementation of such simulations. Ansätze are, generally, constructed as series of fermionic-excitation…
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Molecular simulations with the variational quantum eigensolver (VQE) are a promising application for emerging noisy intermediate-scale quantum computers. Constructing accurate molecular ansätze that are easy to optimize and implemented by shallow quantum circuits is crucial for the successful implementation of such simulations. Ansätze are, generally, constructed as series of fermionic-excitation evolutions. Instead, we demonstrate the usefulness of constructing ansätze with "qubit-excitation evolutions", which, contrary to fermionic excitation evolutions, obey "qubit commutation relations". We show that qubit excitation evolutions, despite the lack of some of the physical features of fermionic excitation evolutions, accurately construct ansätze, while requiring asymptotically fewer gates. Utilizing qubit excitation evolutions, we introduce the qubit-excitation-based adaptive (QEB-ADAPT)-VQE protocol. The QEB-ADAPT-VQE is a modification of the ADAPT-VQE that performs molecular simulations using a problem-tailored ansatz, grown iteratively by appending evolutions of qubit excitation operators. By performing classical numerical simulations for small molecules, we benchmark the QEB-ADAPT-VQE, and compare it against the original fermionic-ADAPT-VQE and the qubit-ADAPT-VQE. In terms of circuit efficiency and convergence speed, we demonstrate that the QEB-ADAPT-VQE outperforms the qubit-ADAPT-VQE, which to our knowledge was the previous most circuit-efficient scalable VQE protocol for molecular simulations.
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Submitted 14 October, 2021; v1 submitted 20 November, 2020;
originally announced November 2020.
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Non-planar geometrical effects on the magnetoelectrical signal in a three-dimensional nanomagnetic circuit
Authors:
Fanfan Meng,
Claire Donnelly,
Claas Abert,
Luka Skoric,
Stuart Holmes,
Zhuocong Xiao,
Jung-Wei Liao,
Peter J. Newton,
Crispin H. W. Barnes,
Dédalo Sanz-Hernández,
Aurelio Hierro-Rodriguez,
Dieter Suess,
Russell P. Cowburn,
Amalio Fernández-Pacheco
Abstract:
Expanding nanomagnetism and spintronics into three dimensions (3D) offers great opportunities for both fundamental and technological studies. However, probing the influence of complex 3D geometries on magnetoelectrical phenomena poses important experimental and theoretical challenges. In this work, we investigate the magnetoelectrical signals of a ferromagnetic 3D nanodevice integrated into a micr…
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Expanding nanomagnetism and spintronics into three dimensions (3D) offers great opportunities for both fundamental and technological studies. However, probing the influence of complex 3D geometries on magnetoelectrical phenomena poses important experimental and theoretical challenges. In this work, we investigate the magnetoelectrical signals of a ferromagnetic 3D nanodevice integrated into a microelectronic circuit using direct-write nanofabrication. Due to the 3D vectorial nature of both electrical current and magnetisation, a complex superposition of several magnetoelectrical effects takes place. By performing electrical measurements under the application of 3D magnetic fields, in combination with macrospin simulations and finite element modelling, we disentangle the superimposed effects, finding how a 3D geometry leads to unusual angular dependences of well-known magnetotransport effects such as the anomalous Hall effect. Crucially, our analysis also reveals a strong role of the noncollinear demagnetising fields intrinsic to 3D nanostructures, which results in an angular dependent magnon magnetoresistance contributing strongly to the total magnetoelectrical signal. These findings are key to the understanding of 3D spintronic systems and underpin further fundamental and device-based studies.
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Submitted 18 November, 2020;
originally announced November 2020.
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Invariant subspaces of two-qubit quantum gates and their application in the verification of quantum computers
Authors:
Yordan S. Yordanov,
Jacob Chevalier-Drori,
Thierry Ferrus,
Matthew Applegate,
Crispin H. W. Barnes
Abstract:
We investigate the groups generated by the sets of $CP$, $CNOT$ and $SWAP^α$ (power-of-SWAP) quantum gate operations acting on $n$ qubits. Isomorphisms to standard groups are found, and using techniques from representation theory, we are able to determine the invariant subspaces of the $n-$qubit Hilbert space under the action of each group. For the $CP$ operation, we find isomorphism to the direct…
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We investigate the groups generated by the sets of $CP$, $CNOT$ and $SWAP^α$ (power-of-SWAP) quantum gate operations acting on $n$ qubits. Isomorphisms to standard groups are found, and using techniques from representation theory, we are able to determine the invariant subspaces of the $n-$qubit Hilbert space under the action of each group. For the $CP$ operation, we find isomorphism to the direct product of $n(n-1)/2$ cyclic groups of order $2$, and determine $2^n$ $1$-dimensional invariant subspaces corresponding to the computational state-vectors. For the $CNOT$ operation, we find isomorphism to the general linear group of an $n$-dimensional space over a field of $2$ elements, $GL(n,2)$, and determine two $1$-dimensional invariant subspaces and one $(2^n-2)$-dimensional invariant subspace. For the $SWAP^α$ operation we determine a complex structure of invariant subspaces with varying dimensions and occurrences and present a recursive procedure to construct them. As an example of an application for our work, we suggest that these invariant subspaces can be used to construct simple formal verification procedures to assess the operation of quantum computers of arbitrary size.
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Submitted 9 September, 2020; v1 submitted 8 September, 2020;
originally announced September 2020.
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Efficient quantum circuits for quantum computational chemistry
Authors:
Yordan S. Yordanov,
David R. M. Arvidsson-Shukur,
Crispin H. W. Barnes
Abstract:
Molecular quantum simulations with the variational quantum eigensolver (VQE) rely on ansatz states that approximate the molecular ground states. These ansatz states are generally defined by parametrized fermionic excitation operators and an initial reference state. Efficient ways to perform fermionic excitations are vital for the realization of the VQE on noisy intermediate-scale quantum computers…
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Molecular quantum simulations with the variational quantum eigensolver (VQE) rely on ansatz states that approximate the molecular ground states. These ansatz states are generally defined by parametrized fermionic excitation operators and an initial reference state. Efficient ways to perform fermionic excitations are vital for the realization of the VQE on noisy intermediate-scale quantum computers. Here, we address this issue by first demonstrating circuits that perform qubit excitations, excitations that do not account for fermionic anticommutation relations. We then extend the functionality of these circuits to perform fermionic excitations. Compared to circuits constructed with the standard use of "$CNOT$ staircases", our circuits offer a linear reduction in the number of $CNOT$ gates, by a factor of $2$ and $8$ per single and double excitation, respectively. Our results reduce the requirements for near-term realizations of quantum molecular simulations.
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Submitted 5 November, 2020; v1 submitted 29 May, 2020;
originally announced May 2020.
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Resolution of spin Hall and anisotropic magnetoresistance in Pt/EuO$_{1-x}$
Authors:
Kingshuk Mallick,
Aditya A. Wagh,
Adrian Ionescu,
Crispin H. W. Barnes,
P. S. Anil Kumar
Abstract:
We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested by a metal-insulator transition as well as a high-T ferromagnet to paramagnet transition (T_P) were observed in the bilayers. The Anisotropic Magnetoresistance…
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We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested by a metal-insulator transition as well as a high-T ferromagnet to paramagnet transition (T_P) were observed in the bilayers. The Anisotropic Magnetoresistance (AMR) could be extracted in the entire T-range, even above T_P, exhibiting two sign crossovers. We attribute its T-evolution to the rotation of easy axis direction from a high-T out-of-plane to a low-T in-plane orientation. In addition, considering MR contributions from the films' (111) texture and interface, we identify a T-window wherein the spin Hall effect induced spin Hall magnetoresistance (SMR) could be extracted.
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Submitted 15 January, 2020;
originally announced January 2020.
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Entanglement generation via power-of-SWAP operations between dynamic electron-spin qubits
Authors:
Hugo V. Lepage,
Aleksander A. Lasek,
David R. M. Arvidsson-Shukur,
Crispin H. W. Barnes
Abstract:
Surface acoustic waves (SAWs) can create moving quantum dots in piezoelectric materials. Here we show how electron-spin qubits located on dynamic quantum dots can be entangled. Previous theoretical and numerical models of quantum-dot entanglement generation have been insufficient to study quantum dynamics in realistic experimental devices. We utilize state-of-the-art graphics processing units to s…
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Surface acoustic waves (SAWs) can create moving quantum dots in piezoelectric materials. Here we show how electron-spin qubits located on dynamic quantum dots can be entangled. Previous theoretical and numerical models of quantum-dot entanglement generation have been insufficient to study quantum dynamics in realistic experimental devices. We utilize state-of-the-art graphics processing units to simulate the wave function dynamics of two electrons carried by a SAW through a 2D semiconductor heterostructure. We build a methodology to implement a power-of-SWAP gate via the Coulomb interaction. A benefit of the SAW architecture is that it provides a coherent way of transporting the qubits through an electrostatic potential. This architecture allows us to avoid problems associated with fast control pulses and guarantees operation consistency, providing an advantage over static qubits. For inter-dot barrier heights where the double occupation energy is sufficiently greater than the double-dot hop** energy, we find that parameters based on experiments in GaAs/AlGaAs heterostructures can produce a high-fidelity root-of-SWAP operation. Our results provide a methodology for a crucial component of dynamic-qubit quantum computing.
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Submitted 15 January, 2020;
originally announced January 2020.
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Implementation of a general single-qubit positive operator-valued measure on a circuit-based quantum computer
Authors:
Yordan S. Yordanov,
Crispin H. W. Barnes
Abstract:
We derive a deterministic protocol to implement a general single-qubit POVM on near-term circuit-based quantum computers. The protocol has a modular structure, such that an $n$-element POVM is implemented as a sequence of $(n-1)$ circuit modules. Each module performs a $2$-element POVM. Two variations of the protocol are suggested, one optimal in terms of number of ancilla qubits, the other optima…
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We derive a deterministic protocol to implement a general single-qubit POVM on near-term circuit-based quantum computers. The protocol has a modular structure, such that an $n$-element POVM is implemented as a sequence of $(n-1)$ circuit modules. Each module performs a $2$-element POVM. Two variations of the protocol are suggested, one optimal in terms of number of ancilla qubits, the other optimal in terms of number of qubit gate operations and quantum circuit depth. We use the protocol to implement $2$- and $3$-element POVMs on two publicly available quantum computing devices. The results we obtain suggest that implementing non-trivial POVMs could be within the reach of the current noisy quantum computing devices.
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Submitted 14 January, 2020;
originally announced January 2020.
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Role of spin mixing conductance in determining thermal spin pum** near the ferromagnetic phase transition in EuO_{1-x} and La2NiMnO6
Authors:
Kingshuk Mallick,
Aditya A. Wagh,
Adrian Ionescu,
Crispin H. W. Barnes,
P. S. Anil Kumar
Abstract:
We present a comprehensive study of the temperature (T) dependence of the longitudinal spin Seebeck effect (LSSE) in Pt/EuO_{1-x} and Pt/La2NiMnO6 (LNMO) hybrid structures across their Curie temperatures (Tc). Both systems host ferromagnetic interaction below Tc, hence present optimal conditions for testing magnon spin current based theories against ferrimagnetic YIG. Notably, we observe an anomal…
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We present a comprehensive study of the temperature (T) dependence of the longitudinal spin Seebeck effect (LSSE) in Pt/EuO_{1-x} and Pt/La2NiMnO6 (LNMO) hybrid structures across their Curie temperatures (Tc). Both systems host ferromagnetic interaction below Tc, hence present optimal conditions for testing magnon spin current based theories against ferrimagnetic YIG. Notably, we observe an anomalous Nernst effect (ANE) generated voltage in bare EuO_{1-x}, however, we find LSSE predominates the thermal signals in the bilayers with Pt. The T-dependence of the LSSE in small T-range near Tc could be fitted to a power law of the form (Tc-T)^P. The derived critical exponent, P, was verified for different methods of LSSE representation and sample crystallinity. The results are explained based on the magnon-driven thermal spin pum** mechanism that relate the T-dependence of LSSE to the spin mixing conductance (Gmix) at the heavy metal/ferromagnet (HM/FM) interface, which in turn is known to vary in accordance with the square of the spontaneous magnetization (Ms). Additionally, the T-dependence of the real part of Gmix derived from spin Hall magnetoresistance measurements at different temperatures for the Pt/LNMO structure, further establish the interdependence.
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Submitted 1 November, 2019;
originally announced November 2019.
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Post-Selection and Counterfactual Communication
Authors:
David R. M. Arvidsson-Shukur,
Crispin H. W. Barnes
Abstract:
A recent quantum protocol for counterfactual communication [Y. Aharonov and L. Vaidman, Phys. Rev. A 99, 010103(R), 2019] relies on post-selection to eliminate the weak trace in the transmission channel. We show that the post-selection in this protocol also eliminates the flow of Fisher information from transmitter to receiver. However, we also show that a classical communication protocol with pos…
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A recent quantum protocol for counterfactual communication [Y. Aharonov and L. Vaidman, Phys. Rev. A 99, 010103(R), 2019] relies on post-selection to eliminate the weak trace in the transmission channel. We show that the post-selection in this protocol also eliminates the flow of Fisher information from transmitter to receiver. However, we also show that a classical communication protocol with post-selection can be counterfactual. Hence, we argue that post-selection should not be allowed in genuine counterfactual communication. In the quantum counterfactual communication protocol, the probability of discarding an event by post-selection tends to zero with an increasing number of ideal optical components. But the counterfactual violation strength tends to infinity at a faster rate. Consequently, the quantum protocol is not counterfactual proper.
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Submitted 11 June, 2019; v1 submitted 1 April, 2019;
originally announced April 2019.
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Quantum Advantage in Postselected Metrology
Authors:
David R. M. Arvidsson-Shukur,
Nicole Yunger Halpern,
Hugo V. Lepage,
Aleksander A. Lasek,
Crispin H. W. Barnes,
Seth Lloyd
Abstract:
We show that postselection offers a nonclassical advantage in metrology. In every parameter-estimation experiment, the final measurement or the postprocessing incurs some cost. Postselection can improve the rate of Fisher information (the average information learned about an unknown parameter from an experimental trial) to cost. This improvement, we show, stems from the negativity of a quasiprobab…
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We show that postselection offers a nonclassical advantage in metrology. In every parameter-estimation experiment, the final measurement or the postprocessing incurs some cost. Postselection can improve the rate of Fisher information (the average information learned about an unknown parameter from an experimental trial) to cost. This improvement, we show, stems from the negativity of a quasiprobability distribution, a quantum extension of a probability distribution. In a classical theory, in which all observables commute, our quasiprobability distribution can be expressed as real and nonnegative. In a quantum-mechanically noncommuting theory, nonclassicality manifests in negative or nonreal quasiprobabilities. The distribution's nonclassically negative values enable postselected experiments to outperform even postselection-free experiments whose input states and final measurements are optimized: Postselected quantum experiments can yield anomalously large information-cost rates. We prove that this advantage is genuinely nonclassical: no classically commuting theory can describe any quantum experiment that delivers an anomalously large Fisher information. Finally, we outline a preparation-and-postselection procedure that can yield an arbitrarily large Fisher information. Our results establish the nonclassicality of a metrological advantage, leveraging our quasiprobability distribution as a mathematical tool.
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Submitted 25 September, 2020; v1 submitted 6 March, 2019;
originally announced March 2019.
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Sound-driven single-electron transfer in a circuit of coupled quantum rails
Authors:
Shintaro Takada,
Hermann Edlbauer,
Hugo V. Lepage,
Junliang Wang,
Pierre-André Mortemousque,
Giorgos Georgiou,
Crispin H. W. Barnes,
Chris J. B. Ford,
Mingyun Yuan,
Paulo V. Santos,
Xavier Waintal,
Arne Ludwig,
Andreas D. Wieck,
Matias Urdampilleta,
Tristan Meunier,
Christopher Bäuerle
Abstract:
Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we…
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Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we present two essential building blocks of such a SAW-driven quantum circuit. First, we implement a directional coupler allowing to partition a flying electron arbitrarily into two paths of transportation. Second, we demonstrate a triggered single-electron source enabling synchronisation of the SAW-driven sending process. Exceeding a single-shot transfer efficiency of 99 %, we show that a SAW-driven integrated circuit is feasible with single electrons on a large scale. Our results pave the way to perform quantum logic operations with flying electron qubits.
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Submitted 23 September, 2019; v1 submitted 2 March, 2019;
originally announced March 2019.
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Analysis of a capped carbon nanotube (CNT) with linear-scaling density-functional theory
Authors:
C. J. Edgcombe,
S. M. Masur,
E. B. Linscott,
J. A. J. Whaley-Baldwin,
C. H. W. Barnes
Abstract:
The apex region of a capped (5,5) carbon nanotube (CNT) has been modelled with the DFT package ONETEP, using boundary conditions provided by a classical calculation with a conducting surface in place of the CNT. Results from the DFT solution include the Fermi level and the physical distribution and energies of individual Kohn-Sham orbitals for the CNT tip. Application of an external electric field…
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The apex region of a capped (5,5) carbon nanotube (CNT) has been modelled with the DFT package ONETEP, using boundary conditions provided by a classical calculation with a conducting surface in place of the CNT. Results from the DFT solution include the Fermi level and the physical distribution and energies of individual Kohn-Sham orbitals for the CNT tip. Application of an external electric field changes the orbital number of the highest occupied molecular orbital (the HOMO) and consequently changes the distribution of the HOMO on the CNT.
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Submitted 16 January, 2019; v1 submitted 11 September, 2018;
originally announced September 2018.
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Genuine Counterfactual Communication with a Nanophotonic Processor
Authors:
I. Alonso Calafell,
T. Strömberg,
D. R. M. Arvidsson-Shukur,
L. A. Rozema,
V. Saggio,
C. Greganti,
N. C. Harris,
M. Prabhu,
J. Carolan,
M Hochberg,
T. Baehr-Jones,
D. Englund,
C. H. W. Barnes,
P. Walther
Abstract:
In standard communication information is carried by particles or waves. Counterintuitively, in counterfactual communication particles and information can travel in opposite directions. The quantum Zeno effect allows Bob to transmit a message to Alice by encoding information in particles he never interacts with. The first suggested protocol not only required thousands of ideal optical components, b…
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In standard communication information is carried by particles or waves. Counterintuitively, in counterfactual communication particles and information can travel in opposite directions. The quantum Zeno effect allows Bob to transmit a message to Alice by encoding information in particles he never interacts with. The first suggested protocol not only required thousands of ideal optical components, but also resulted in a so-called "weak trace" of the particles having travelled from Bob to Alice, calling the scalability and counterfactuality of previous proposals and experiments into question. Here we overcome these challenges, implementing a new protocol in a programmable nanophotonic processor, based on reconfigurable silicon-on-insulator waveguides that operate at telecom wavelengths. This, together with our telecom single-photon source and highly-efficient superconducting nanowire single-photon detectors, provides a versatile and stable platform for a high-fidelity implementation of genuinely trace-free counterfactual communication, allowing us to actively tune the number of steps in the Zeno measurement, and achieve a bit error probability below 1%, with neither post-selection nor a weak trace. Our demonstration shows how our programmable nanophotonic processor could be applied to more complex counterfactual tasks and quantum information protocols.
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Submitted 14 August, 2018;
originally announced August 2018.
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Structural and magnetic properties of core-shell Au/Fe3O4 nanoparticles
Authors:
L. León Fénix J. A. H. Coaquira,
M. A. R. Martínez,
G. F. Goya,
J. Mantilla,
M. H. Sousa,
L. de los Santos Valladares,
C. H. W. Barnes,
P. C. Morais
Abstract:
We present a systematic study of core-shell Au/Fe_3O_4 nanoparticles produced by thermal decomposition under mild conditions. The morphology and crystal structure of the nanoparticles revealed the presence of Au core of <d> = (6.9\pm 1.0) nm surrounded by Fe_3O_4 shell with a thickness of ~3.5 nm, epitaxially grown onto the Au core surface. The Au/Fe_3O_4 core-shell structure was demonstrated by h…
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We present a systematic study of core-shell Au/Fe_3O_4 nanoparticles produced by thermal decomposition under mild conditions. The morphology and crystal structure of the nanoparticles revealed the presence of Au core of <d> = (6.9\pm 1.0) nm surrounded by Fe_3O_4 shell with a thickness of ~3.5 nm, epitaxially grown onto the Au core surface. The Au/Fe_3O_4 core-shell structure was demonstrated by high angle annular dark field scanning transmission electron microscopy analysis. The magnetite shell grown on top of the Au nanoparticle displayed a thermal blocking state at temperatures below T_B = 59 K and a relaxed state well above T_B. Remarkably, an exchange bias effect was observed when cooling down the samples below room temperature under an external magnetic field. Moreover, the exchange bias field (H_{EX}) started to appear at T~40 K and its value increased by decreasing the temperature. This effect has been assigned to the interaction of spins located in the magnetically disordered regions (in the inner and outer surface of the Fe_3O_4 shell) and spins located in the ordered region of the Fe_3O_4 shell.
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Submitted 19 July, 2017;
originally announced July 2017.
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Evaluation of Counterfactuality in Counterfactual Communication Protocols
Authors:
D. R. M. Arvidsson-Shukur,
A. N. O. Gottfries,
C. H. W. Barnes
Abstract:
We provide an in-depth investigation of parameter estimation in Nested Mach-Zehnder interferometers (NMZIs) using two information measures: the Shannon mutual information and the classical Fisher information. Protocols for counterfactual communition (CFC) have, so far, been based on two different definitions of counterfactuality. In particular, some schemes have been based on NMZI devices, but hav…
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We provide an in-depth investigation of parameter estimation in Nested Mach-Zehnder interferometers (NMZIs) using two information measures: the Shannon mutual information and the classical Fisher information. Protocols for counterfactual communition (CFC) have, so far, been based on two different definitions of counterfactuality. In particular, some schemes have been based on NMZI devices, but have recently been subject to criticism. We provide a methodology for evaluating the counterfactuality of these protocols, based on an information theoretical framework. More specifically, we make the assumption that any realistic quantum channel in MZI structures will have some weak uncontrolled interaction, and we use the Fisher information to measure counterfactual violations. The measure is used to evaluate the suggested counterfactual communication protocol by Salih et al. \cite{Salih13}. The protocol of Arvidsson-Shukur and Barnes \cite{ArvShukur16}, based on a different definition, is evaluated with a probability measure. Our results show that the definition of Arvidsson-Shukur and Barnes is satisfied by their scheme, whilst that of Salih et al. is only satisfied by perfect quantum channels. For realistic devices the latter protocol does not achieve its objective.
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Submitted 18 December, 2017; v1 submitted 18 May, 2017;
originally announced May 2017.
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Quantum Counterfactual Communication Without a Weak Trace
Authors:
David Roland Miran Arvidsson-Shukur,
Crispin Henry William Barnes
Abstract:
The classical theories of communication rely on the assumption that there has to be a flow of particles from Bob to Alice in order for him to send a message to her. We develop a quantum protocol that allows Alice to perceive Bob's message "counterfactually". That is, without Alice receiving any particles that have interacted with Bob. By utilising a setup built on results from interaction-free mea…
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The classical theories of communication rely on the assumption that there has to be a flow of particles from Bob to Alice in order for him to send a message to her. We develop a quantum protocol that allows Alice to perceive Bob's message "counterfactually". That is, without Alice receiving any particles that have interacted with Bob. By utilising a setup built on results from interaction-free measurements, we outline a communication protocol whereby the information travels in the opposite direction of the emitted particles. In comparison to previous attempts on such protocols, this one is such that a weak measurement at the message source would not leave a weak trace that could be detected by Alice's receiver. Whilst some interaction-free schemes require a large number of carefully aligned beam-splitters, our protocol is realisable with two or more beam-splitters. We demonstrate this protocol by numerically solving the time-dependent Schrödinger Equation (TDSE) for a Hamiltonian that implements this quantum counterfactual phenomenon.
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Submitted 16 May, 2017;
originally announced May 2017.
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An optimal single-electron charge qubit for solid-state double quantum dots
Authors:
J. Mosakowski,
E. T. Owen,
T. Ferrus,
D. A. Williams,
M. C. Dean,
C. H. W. Barnes
Abstract:
We report on an optimal single-electron charge qubit for a solid-state double quantum dot (DQD) system and analyse its dynamics under a time-dependent linear detuning, using GPU accelerated numerical solutions to the time-dependent Schrödinger equation. The optimal qubit is found to have basis states defined as the symmetric and antisymmetric linear combinations of the lowest energy bonding and an…
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We report on an optimal single-electron charge qubit for a solid-state double quantum dot (DQD) system and analyse its dynamics under a time-dependent linear detuning, using GPU accelerated numerical solutions to the time-dependent Schrödinger equation. The optimal qubit is found to have basis states defined as the symmetric and antisymmetric linear combinations of the lowest energy bonding and anti-bonding states of the DQD at zero bias. In contrast to charge qubits defined by the two localised ground states of the uncoupled DQD, this choice of the basis causes the resulting dynamics to have a maximal overlap with an idealised two-state model. Our optimal qubit basis states are not localised to a single quantum dot and, as such, initialising the qubit requires a particular sequence of gate pulses to take the system from an initial fiducial state of the DQD to the logical $0$ or $1$. We determine this sequence using pulses that incorporate the expected experimental finite rise times. We also show how to perform arbitrary single qubit operations on the Bloch sphere using spin-echo type pulsing, allowing us to obtain any qubit state with at most two single pulses. Measurement of the optimal qubits is achieved by determining the probability of finding the electron in one of the dots.
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Submitted 16 March, 2016;
originally announced March 2016.
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Protocol for Fermionic Positive-Operator-Valued Measures
Authors:
David R. M. Arvidsson-Shukur,
Hugo V. Lepage,
Edmund T. Owen,
Thierry Ferrus,
Crispin H. W. Barnes
Abstract:
In this paper we present a protocol for the implementation of a positive-operator-valued measure (POVM) on massive fermionic qubits. We present methods for implementing non-dispersive qubit transport, spin rotations and spin polarizing beam-splitter operations. Our scheme attains linear optics-like control of the spatial extent of the qubits by considering groundstate electrons trapped in the mini…
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In this paper we present a protocol for the implementation of a positive-operator-valued measure (POVM) on massive fermionic qubits. We present methods for implementing non-dispersive qubit transport, spin rotations and spin polarizing beam-splitter operations. Our scheme attains linear optics-like control of the spatial extent of the qubits by considering groundstate electrons trapped in the minima of surface acoustic waves in semiconductor heterostructures. Furthermore, we numerically simulate a high-fidelity POVM that carries out Procrustean entanglement distillation in the framework of our scheme, using experimentally realistic potentials. Our protocol can be applied, not only to pure ensembles with particle pairs of known identical entanglement, but also to realistic ensembles of particle pairs with a distribution of entanglement entropies. This paper provides an experimentally realisable design for future quantum technologies.
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Submitted 20 October, 2017; v1 submitted 3 February, 2016;
originally announced February 2016.
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Ground-state electronic structure of quasi-one-dimensional wires in semiconductor heterostructures
Authors:
E. T. Owen,
C. H. W. Barnes
Abstract:
We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density distribution. Our calculations are presented specifically for surface-gate-defined quasi-one-dimensional quantum wires in a GaAs-AlGaAs heterostructure but we ex…
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We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density distribution. Our calculations are presented specifically for surface-gate-defined quasi-one-dimensional quantum wires in a GaAs-AlGaAs heterostructure but we expect our results to apply more generally for other low dimensional semiconductor systems. We show that at high densities with strong confinement, screening of electrons in the direction transverse to the wire is efficient and density modulations are not visible. In the low-density, weak-confinement regime, the exchange-correlation potential induces small density modulations as the electrons are depleted from the wire. At the weakest confinements and lowest densities, the electron density splits into two rows thereby forming a pair of quantum wires that lie beneath the surface gates. An additional double-well external potential forms at very low density which enhances this row splitting phenomenon. We produce phase diagrams that show a transition between the presence of a single quantum wire in a split-gate structure and two quantum wires. We suggest that this phenomenon can be used to pattern and modulate the electron density in low-dimensional structures with particular application to systems where a proximity effect from a surface gate would be valuable.
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Submitted 20 October, 2016; v1 submitted 8 September, 2015;
originally announced September 2015.
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The elevated Curie temperature and half-metallicity in the ferromagnetic semiconductor La$_{x}$Eu$_{1-x}$O
Authors:
Pedro M. S. Monteiro,
Peter J. Baker,
Nicholas D. M. Hine,
Nina-J. Steinke,
Adrian Ionescu,
Joshaniel F. K. Cooper,
Crispin H. W. Barnes,
Christian J. Kinane,
Zaher Salman,
Andrew R. Wildes,
Thomas Prokscha,
Sean Langridge
Abstract:
Here we study the effect of La do** in EuO thin films using SQUID magnetometry, muon spin rotation ($μ$SR), polarized neutron reflectivity (PNR), and density functional theory (DFT). The $μ$SR data shows that the La$_{0.15}$Eu$_{0.85}$O is homogeneously magnetically ordered up to its elevated $T_{\rm C}$. It is concluded that bound magnetic polaron behavior does not explain the increase in…
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Here we study the effect of La do** in EuO thin films using SQUID magnetometry, muon spin rotation ($μ$SR), polarized neutron reflectivity (PNR), and density functional theory (DFT). The $μ$SR data shows that the La$_{0.15}$Eu$_{0.85}$O is homogeneously magnetically ordered up to its elevated $T_{\rm C}$. It is concluded that bound magnetic polaron behavior does not explain the increase in $T_{\rm C}$ and an RKKY-like interaction is consistent with the $μ$SR data. The estimation of the magnetic moment by DFT simulations concurs with the results obtained by PNR, showing a reduction of the magnetic moment per La$_{x}$Eu$_{1-x}$O for increasing lanthanum do**. This reduction of the magnetic moment is explained by the reduction of the number of Eu-4$f$ electrons present in all the magnetic interactions in EuO films. Finally, we show that an upwards shift of the Fermi energy with La or Gd do** gives rise to half-metallicity for do** levels as high as 3.2 %.
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Submitted 20 May, 2015;
originally announced May 2015.
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Long-range electronic reconstruction to a $d_{xz,yz}$-dominated Fermi surface below the LaAlO$_3$/SrTiO$_3$ interface
Authors:
A. P. Petrović,
A. Paré,
T. R. Paudel,
K. Lee,
S. Holmes,
C. H. W. Barnes,
A. David,
T. Wu,
E. Y. Tsymbal,
C. Panagopoulos
Abstract:
Low dimensionality, broken symmetry and easily-modulated carrier concentrations provoke novel electronic phase emergence at oxide interfaces. However, the spatial extent of such reconstructions - i.e. the interfacial "depth" - remains unclear. Examining LaAlO$_3$/SrTiO$_3$ heterostructures at previously unexplored carrier densities $n_{2D}\geq6.9\times10^{14}$ cm$^{-2}$, we observe a Shubnikov-de…
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Low dimensionality, broken symmetry and easily-modulated carrier concentrations provoke novel electronic phase emergence at oxide interfaces. However, the spatial extent of such reconstructions - i.e. the interfacial "depth" - remains unclear. Examining LaAlO$_3$/SrTiO$_3$ heterostructures at previously unexplored carrier densities $n_{2D}\geq6.9\times10^{14}$ cm$^{-2}$, we observe a Shubnikov-de Haas effect for small in-plane fields, characteristic of an anisotropic 3D Fermi surface with preferential $d_{xz,yz}$ orbital occupancy extending over at least 100~nm perpendicular to the interface. Quantum oscillations from the 3D Fermi surface of bulk doped SrTiO$_3$ emerge simultaneously at higher $n_{2D}$. We distinguish three areas in doped perovskite heterostructures: narrow ($<20$ nm) 2D interfaces housing superconductivity and/or other emergent phases, electronically isotropic regions far ($>120$ nm) from the interface and new intermediate zones where interfacial proximity renormalises the electronic structure relative to the bulk.
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Submitted 20 June, 2014;
originally announced June 2014.
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The Vortex Signature of Discrete Ferromagnetic Dipoles at the LaAlO$_3$/SrTiO$_3$ Interface
Authors:
A. P. Petrović,
A. Paré,
T. R. Paudel,
K. Lee,
S. Holmes,
C. H. W. Barnes,
A. David,
T. Wu,
E. Y. Tsymbal,
C. Panagopoulos
Abstract:
A hysteretic in-plane magnetoresistance develops below the superconducting transition of LaAlO$_3$/SrTiO$_3$ interfaces for $\left|H_{/\!/}\right|<$ 0.15 T, independently of the carrier density or oxygen annealing. We show that this hysteresis arises from vortex depinning within a thin superconducting layer, in which the vortices are created by discrete ferromagnetic dipoles located solely above t…
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A hysteretic in-plane magnetoresistance develops below the superconducting transition of LaAlO$_3$/SrTiO$_3$ interfaces for $\left|H_{/\!/}\right|<$ 0.15 T, independently of the carrier density or oxygen annealing. We show that this hysteresis arises from vortex depinning within a thin superconducting layer, in which the vortices are created by discrete ferromagnetic dipoles located solely above the layer. We find no evidence for finite-momentum pairing or bulk magnetism and hence conclude that ferromagnetism is strictly confined to the interface, where it competes with superconductivity.
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Submitted 10 November, 2013;
originally announced November 2013.
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Spatially homogeneous ferromagnetism below the enhanced Curie temperature in EuO_{1-x} thin films
Authors:
Pedro M. S. Monteiro,
Peter J. Baker,
Adrian Ionescu,
Crispin H. W. Barnes,
Zaher Salman,
Andreas Suter,
Thomas Prokscha,
Sean Langridge
Abstract:
We have used low energy implanted muons as a volume sensitive probe of the magnetic properties of EuO_{1-x} thin films. We find that static and homogeneous magnetic order persists up to the elevated T_C in the doped samples and the muon signal displays the double dome feature also observed in the sample magnetization. Our results appear incompatible with either the magnetic phase separation or bou…
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We have used low energy implanted muons as a volume sensitive probe of the magnetic properties of EuO_{1-x} thin films. We find that static and homogeneous magnetic order persists up to the elevated T_C in the doped samples and the muon signal displays the double dome feature also observed in the sample magnetization. Our results appear incompatible with either the magnetic phase separation or bound magnetic polaron descriptions previously suggested to explain the elevated T_C, but are compatible with an RKKY-like interaction mediating magnetic interactions above 69 K.
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Submitted 12 June, 2013; v1 submitted 6 May, 2013;
originally announced May 2013.
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Characterisation of Ferromagnetic Rings for Zernike Phase Plates using the Aharonov-Bohm effect
Authors:
C. J. Edgcombe,
A. Ionescu,
J. C. Loudon,
A. M. Blackburn,
H. Kurebayashi,
C. H. W. Barnes
Abstract:
Holographic measurements on magnetised thin-film cobalt rings have demonstrated both onion and vortex states of magnetisation. For a ring in the vortex state, the difference between phases of electron paths that pass through the ring and those that travel outside it was found to agree very well with Aharonov-Bohm theory within measurement error. Thus the magnetic flux in thin-film rings of ferroma…
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Holographic measurements on magnetised thin-film cobalt rings have demonstrated both onion and vortex states of magnetisation. For a ring in the vortex state, the difference between phases of electron paths that pass through the ring and those that travel outside it was found to agree very well with Aharonov-Bohm theory within measurement error. Thus the magnetic flux in thin-film rings of ferromagnetic material can provide the phase shift required for phase plates in transmission electron microscopy. When a ring of this type is used as a phase plate, scattered electrons will be intercepted over a radial range similar to the ring width. A cobalt ring of thickness 20 nm can produce a phase difference of pi/2 from a width of just under 30 nm, suggesting that the range of radial interception for this type of phase plate can be correspondingly small.
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Submitted 15 June, 2012;
originally announced June 2012.
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On-demand single-electron transfer between distant quantum dots
Authors:
R. P. G. McNeil,
M. Kataoka,
C. J. B. Ford,
C. H. W. Barnes,
D. Anderson,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie
Abstract:
Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity can be reduced by separating qubit manipulation from measurement and by providing some means to transport electrons from one to the other.[2] Tunnelling between…
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Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity can be reduced by separating qubit manipulation from measurement and by providing some means to transport electrons from one to the other.[2] Tunnelling between neighbouring dots has been demonstrated[3, 4] with great control, and the manipulation of electrons in single and double-dot systems is advancing rapidly.[5-8] For distances greater than a few hundred nanometres neither free propagation nor tunnelling are viable whilst maintaining confinement of single electrons. Here we show how a single electron may be captured in a surface acoustic wave minimum and transferred from one quantum dot to a second unoccupied dot along a long empty channel. The transfer direction may be reversed and the same electron moved back and forth over sixty times without error, a cumulative distance of 0.25 mm. Such on-chip transfer extends communication between quantum dots to a range that may allow the integration of discrete quantum information-processing components and devices.
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Submitted 19 July, 2011;
originally announced July 2011.
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Thickness-dependent magnetic properties of oxygen-deficient EuO
Authors:
M. Barbagallo,
T. Stollenwerk,
J. Kroha,
N. -J. Steinke,
N. D. M. Hine,
J. F. K. Cooper,
C. H. W. Barnes,
A. Ionescu,
P. M. D. S. Monteiro,
J. -Y. Kim,
K. R. A. Ziebeck,
C. J. Kinane,
R. M. Dalgliesh,
T. R. Charlton,
S. Langridge
Abstract:
We have studied how the magnetic properties of oxygen-deficient EuO sputtered thin films vary as a function of thickness. The magnetic moment, measured by polarized neutron reflectometry, and the Curie temperature are found to decrease with reducing thickness. Our results indicate that the reduced number of nearest neighbors, band bending and the partial depopulation of the electronic states that…
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We have studied how the magnetic properties of oxygen-deficient EuO sputtered thin films vary as a function of thickness. The magnetic moment, measured by polarized neutron reflectometry, and the Curie temperature are found to decrease with reducing thickness. Our results indicate that the reduced number of nearest neighbors, band bending and the partial depopulation of the electronic states that carry the spins associated with the 4f orbitals of Eu are all contributing factors in the surface-induced change of the magnetic properties of EuO$_{1-x}$.
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Submitted 21 April, 2011;
originally announced April 2011.
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Magnetism in graphite oxide: The role of epoxy groups
Authors:
D. W. Lee,
J. M. Cole,
J. W. Seo,
S. S. Saxena,
C. H. W. Barnes,
E. E. M. Chia,
C. Panagopoulos
Abstract:
We investigate the magnetism in graphite by controlled oxidation. Our approach renders graphite an insulator while maintaining its structure. Fourier transform infrared spectroscopy and X-ray absorption near edge structure spectra reveal that graphite oxide has epoxy groups on its surface and it is not thermally stable. Magnetic susceptibility data exhibit negative Curie temperature, field irrever…
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We investigate the magnetism in graphite by controlled oxidation. Our approach renders graphite an insulator while maintaining its structure. Fourier transform infrared spectroscopy and X-ray absorption near edge structure spectra reveal that graphite oxide has epoxy groups on its surface and it is not thermally stable. Magnetic susceptibility data exhibit negative Curie temperature, field irreversibility, and slow relaxation. The magnetic properties diminish after the epoxy groups are destroyed. The overall results indicate the unexpected magnetism is associated with the presence of epoxy groups.
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Submitted 22 February, 2011; v1 submitted 30 May, 2010;
originally announced May 2010.
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Transparent and flexible polymerized graphite oxide thin film with frequency-dependent dielectric constant
Authors:
D. W. Lee,
J. W. Seo,
G. R. Jelbert,
L. de Los Santos V.,
J. M. Cole,
C. Panagopoulos,
C. H. W. Barnes
Abstract:
Here we report on the preparation of transparent and flexible polymerized graphite oxide, which is composed of carbons with sp3-hybridized orbitals and a non-planar ring structure, and which demonstrates dispersion in its dielectric constant at room temperature. This frequency dependence renders the material suitable for creating miniaturized, flexible, and transparent variable capacitors, allowin…
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Here we report on the preparation of transparent and flexible polymerized graphite oxide, which is composed of carbons with sp3-hybridized orbitals and a non-planar ring structure, and which demonstrates dispersion in its dielectric constant at room temperature. This frequency dependence renders the material suitable for creating miniaturized, flexible, and transparent variable capacitors, allowing for smaller and simpler integrated electronic devices. We discuss this polarizability in terms of space charge effects.
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Submitted 30 May, 2010;
originally announced May 2010.
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Spin polarization control through resonant states in an Fe/GaAs Schottky barrier
Authors:
S. Honda,
H. Itoh,
J. Inoue,
H. Kurebayashi,
T. Trypiniotis,
C. H. W. Barnes,
A. Hirohata,
J. A. C. Bland
Abstract:
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons transported through the barrier. The results account very well for experimental results including the tunneling of photo-excited electrons, and suggest…
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Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons transported through the barrier. The results account very well for experimental results including the tunneling of photo-excited electrons, and suggest that the spin polarization (from -100% to 100%) is dependent on the Schottky barrier height. They also suggest that the sign of the spin polarization can be controlled with a bias voltage.
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Submitted 24 September, 2008;
originally announced September 2008.
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Energy-dependent tunnelling from few-electron dynamic quantum dots
Authors:
M. R. Astley,
M. Kataoka,
C. J. B. Ford,
C. H. W. Barnes,
D. Anderson,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
M. Pepper
Abstract:
We measure the electron escape-rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate-equations are used to extract the tunnelling rates, which change by an order of magnitude with tunnel-barrier gate voltage. We find that the tunnelling rates depend on the number of electrons in each dynamic QD because of Coulomb energy. By comparing this dependence to a saddl…
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We measure the electron escape-rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate-equations are used to extract the tunnelling rates, which change by an order of magnitude with tunnel-barrier gate voltage. We find that the tunnelling rates depend on the number of electrons in each dynamic QD because of Coulomb energy. By comparing this dependence to a saddle-point-potential model, the addition energies of the second and third electron in each dynamic QD are estimated. The scale (a few meV) is comparable to those in static QDs as expected.
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Submitted 28 August, 2007;
originally announced August 2007.
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Geometric Suppression of Single-Particle Energy Spacings in Quantum Antidots
Authors:
L. C. Bassett,
C. P. Michael,
C. J. B. Ford,
M. Kataoka,
C. H. W. Barnes,
M. Y. Simmons,
D. A. Ritchie
Abstract:
Quantum Antidot (AD) structures have remarkable properties in the integer quantum Hall regime, exhibiting Coulomb-blockade charging and the Kondo effect despite their open geometry. In some regimes a simple single-particle (SP) model suffices to describe experimental observations while in others interaction effects are clearly important, although exactly how and why interactions emerge is unclea…
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Quantum Antidot (AD) structures have remarkable properties in the integer quantum Hall regime, exhibiting Coulomb-blockade charging and the Kondo effect despite their open geometry. In some regimes a simple single-particle (SP) model suffices to describe experimental observations while in others interaction effects are clearly important, although exactly how and why interactions emerge is unclear. We present a combination of experimental data and the results of new calculations concerning SP orbital states which show how the observed suppression of the energy spacing between states can be explained through a full consideration of the AD potential, without requiring any effects due to electron interactions such as the formation of compressible regions composed of multiple states, which may occur at higher magnetic fields. A full understanding of the regimes in which these effects occur is important for the design of devices to coherently manipulate electrons in edge states using AD resonances.
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Submitted 9 July, 2007;
originally announced July 2007.
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Variation of the hop** exponent in disordered silicon MOSFETs
Authors:
T. Ferrus,
R. George,
C. H. W. Barnes,
N. Lumpkin,
D. J. Paul,
M. Pepper
Abstract:
We observe a complex change in the hop** exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measuremen…
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We observe a complex change in the hop** exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measurements are compatible with a change in transport mechanisms when either the disorder or the electron density is modified suggesting a possible transition from a Mott insulator to an Anderson insulator in these systems.
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Submitted 26 September, 2008; v1 submitted 29 May, 2007;
originally announced May 2007.
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Surface-acoustic-wave-driven luminescence from a lateral p-n junction
Authors:
J. R. Gell,
P. Atkinson,
S. P. Bremner,
F. Sfigakis,
M. Kataoka,
D. Anderson,
G. A. C. Jones,
C. H. W. Barnes,
D. A. Ritchie,
M. B. Ward,
C. E. Norman,
A. J. Shields
Abstract:
The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This typ…
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The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography.
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Submitted 28 January, 2007;
originally announced January 2007.
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Pulse-induced acoustoelectric vibrations in surface-gated GaAs-based quantum devices
Authors:
S. Rahman,
T. M. Stace,
H. P. Langtangen,
M. Kakaoka,
C. H. W. Barnes
Abstract:
We present the results of a numerical investigation which show the excitation of acoustoelectric modes of vibration in GaAs-based heterostructures due to sharp nano-second electric-field pulses applied across surface gates. In particular, we show that the pulses applied in quantum information processing applications are capable of exciting acoustoelectric modes of vibration including surface aco…
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We present the results of a numerical investigation which show the excitation of acoustoelectric modes of vibration in GaAs-based heterostructures due to sharp nano-second electric-field pulses applied across surface gates. In particular, we show that the pulses applied in quantum information processing applications are capable of exciting acoustoelectric modes of vibration including surface acoustic modes which propagate for distances greater than conventional device dimensions. We show that the pulse-induced acoustoelectric vibrations are capable of inducing significant undesired perturbations to the evolution of quantum systems.
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Submitted 22 March, 2007; v1 submitted 18 May, 2006;
originally announced May 2006.
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A finite element analysis of a silicon based double quantum dot structure
Authors:
S. Rahman,
J. Gorman,
C. H. W. Barnes,
D. A. Williams,
H. P. Langtangen
Abstract:
We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for charge and spin-based quantum computation in the solid state, as demonstrated by recent coherent-charge oscillation experiments. Our key findings demonstrate…
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We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for charge and spin-based quantum computation in the solid state, as demonstrated by recent coherent-charge oscillation experiments. Our key findings demonstrate control of the electric potential and electric field in the vicinity of the double quantum-dot by the electric potential applied to the in-plane gates. This constitutes a useful theoretical analysis of the silicon-based architecture for quantum information processing applications.
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Submitted 6 April, 2006; v1 submitted 21 December, 2005;
originally announced December 2005.
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A numerical investigation of a piezoelectric surface acoustic wave interaction with a one-dimensional channel
Authors:
S. Rahman,
M. Kataoka,
C. H. W. Barnes,
H. P. Langtangen
Abstract:
We investigate the propagation of a piezoelectric surface acoustic wave (SAW) across a GaAs/Al$_X$Ga$_{1-X}$As heterostructure surface, on which there is fixed a metallic split-gate. Our method is based on a finite element formulation of the underlying equations of motion, and is performed in three-dimensions fully incorporating the geometry and material composition of the substrate and gates. W…
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We investigate the propagation of a piezoelectric surface acoustic wave (SAW) across a GaAs/Al$_X$Ga$_{1-X}$As heterostructure surface, on which there is fixed a metallic split-gate. Our method is based on a finite element formulation of the underlying equations of motion, and is performed in three-dimensions fully incorporating the geometry and material composition of the substrate and gates. We demonstrate attenuation of the SAW amplitude as a result of the presence of both mechanical and electrical gates on the surface. We show that the incorporation of a simple model for the screening by the two-dimensional electron gas (2DEG), results in a total electric potential modulation that suggests a mechanism for the capture and release of electrons by the SAW. Our simulations suggest the absence of any significant turbulence in the SAW motion which could hamper the operation of SAW based quantum devices of a more complex geometry.
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Submitted 7 May, 2006; v1 submitted 25 December, 2005;
originally announced December 2005.