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Magnetic ordering and dynamics in monolayers and bilayers of chromium trihalides: atomistic simulations approach
Authors:
S. Stagraczynski,
P. Balaz,
M. Jafari,
J. Barnas,
A. Dyrdal
Abstract:
We analyze magnetic properties of monolayers and bilayers of chromium trihalides, CrI$_3$, in two different stacking configurations: AA and rhombohedral ones. Our main focus is on the corresponding Curie temperatures, hysteresis curves, equilibrium spin structures, and spin wave excitations. To obtain all these magnetic characteristic, we employ the atomistic spin dynamics and Monte Carlo simulati…
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We analyze magnetic properties of monolayers and bilayers of chromium trihalides, CrI$_3$, in two different stacking configurations: AA and rhombohedral ones. Our main focus is on the corresponding Curie temperatures, hysteresis curves, equilibrium spin structures, and spin wave excitations. To obtain all these magnetic characteristic, we employ the atomistic spin dynamics and Monte Carlo simulation techniques. The model Hamiltonian includes isotropic exchange coupling, magnetic anisotropy, and Dzyaloshinskii-Moriya interaction. Though the latter is relatively weak in CrI$_3$, we consider a more general case assuming also an enhancement of Dzyaloshinskii-Moriya interaction in the corresponding Janus structures and by external electric fields. An important issue of the analysis is the correlation between hysteresis curves and spin configurations in the system, as well as formation of the skyrmion textures.
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Submitted 23 April, 2024;
originally announced April 2024.
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Spin waves in antiferromagnetically coupled bilayers of transition-metal dichalcogenides with Dzialoshinskii-Moriya interaction
Authors:
Wojciech Rudziński,
Józef Barnaś,
Anna Dyrdał
Abstract:
In this paper we analyze spin waves in bilayers of two-dimensional van der Waals materials, like Vanadium based dichalcogenides, VX$_2$ (X=S, Se, Te) and other materials of similar symmetry. We assume that the materials exhibit Dzialoshinskii- Moriya interaction and in-plane easy-axis magnetic anisotropy due to symmetry breaking induced externally (eg, by strain, gate voltage, proximity effects to…
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In this paper we analyze spin waves in bilayers of two-dimensional van der Waals materials, like Vanadium based dichalcogenides, VX$_2$ (X=S, Se, Te) and other materials of similar symmetry. We assume that the materials exhibit Dzialoshinskii- Moriya interaction and in-plane easy-axis magnetic anisotropy due to symmetry breaking induced externally (eg, by strain, gate voltage, proximity effects to an appropriate substrate/oberlayer, etc). The considerations are limited to a collinear spin ground state, stabilized by a sufficiently strong in-plane magnetic anisotropy. The theoretical analysis is performed within the general spin wave theory based on the Hollstein-Primakoff-Bogolubov transformation.
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Submitted 20 April, 2024;
originally announced April 2024.
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Topological charge and spin Hall effects due to skyrmions in canted antiferromagnets
Authors:
A. N. Zarezad,
A. Qaiumzadeh,
J. Barnaś,
A. Dyrdał
Abstract:
The topological charge Hall effect (TCHE) and the topological spin Hall effect (TSHE), arising from ferromagnetic (FM) and antiferromagnetic (AFM) skyrmions, respectively; can be elucidated through the emergence of spin-dependent Berry gauge fields that affect the adiabatic flow of electrons within the skyrmion texture. TCHE is absent in systems with parity-time (PT) symmetry, such as collinear AF…
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The topological charge Hall effect (TCHE) and the topological spin Hall effect (TSHE), arising from ferromagnetic (FM) and antiferromagnetic (AFM) skyrmions, respectively; can be elucidated through the emergence of spin-dependent Berry gauge fields that affect the adiabatic flow of electrons within the skyrmion texture. TCHE is absent in systems with parity-time (PT) symmetry, such as collinear AFM systems. In this study, we theoretically study TCHE and TSHE in a canted antiferromagnet within the diffusive regime. Spin canting or weak ferromagnetism in canted AFMs that breaks the PT symmetry may arise from strong homogeneous Dzyaloshinskii-Morya interactions. Using a semiclassical Boltzmann approach, we obtain diffusion equations for the spin and charge accumulations in the presence of finite spin-flip and spin-dependent momentum relaxation times. We show that the finite net magnetization, stemming from spin canting and the subsequent breaking of parity-time symmetry, results in the emergence of both finite TCHE and TSHE in AFM systems.
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Submitted 28 February, 2024;
originally announced February 2024.
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Magnon dispersion and spin transport in CrCl$_3$ bilayers under different strain-induced magnetic states
Authors:
Verena Brehm,
Stefan Stagraczynski,
Jozef Barnas,
Anna Dyrdal,
Alireza Qaiumzadeh
Abstract:
Atomically-thin van der Waals magnetic materials offer exceptional opportunities to mechanically and electrically manipulate magnetic states and spin textures. The possibility of efficient spin transport in these materials makes them promising for the development of novel nanospintronics technology. Using atomistic spin dynamics simulations, we investigate magnetic ground state, magnon dispersion,…
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Atomically-thin van der Waals magnetic materials offer exceptional opportunities to mechanically and electrically manipulate magnetic states and spin textures. The possibility of efficient spin transport in these materials makes them promising for the development of novel nanospintronics technology. Using atomistic spin dynamics simulations, we investigate magnetic ground state, magnon dispersion, critical temperature, and magnon spin transport in CrCl$_3$ bilayers in the absence and presence of compressive and tensile strains. We show that in the presence of mechanical strain, the magnon band gap at the $Γ$ point and the critical temperature of the bilayer are increased. Furthermore, our simulations show that the magnon diffusion length is reduced in the presence of strain. Moreover, by exciting magnons through the spin Seebeck effect and spin Hall-induced torque, we illustrate distinctions between magnon spin transport in the antiferromagnetic state, under compressive strains, and ferromagnetic states, under tensile strains or in the unstrained case.
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Submitted 15 May, 2024; v1 submitted 25 January, 2024;
originally announced January 2024.
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Skyrmion-deriven topological spin and charge Hall effects in diffusive antiferromagnetic thin films
Authors:
Amir N. Zarezad,
Józef Barnaś,
Anna Dyrdał,
Alireza Qaiumzadeh
Abstract:
We investigate topological Hall effects in a metallic antiferromagnetic (AFM) thin film and/or at the interface of an AFM insulator-normal metal bilayer with a single skyrmion in the diffusive regime. To determine the spin and charge Hall currents, we employed a Boltzmann kinetic equation with both spin-dependent and spin-flip scatterings. The interaction between conduction electrons and static sk…
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We investigate topological Hall effects in a metallic antiferromagnetic (AFM) thin film and/or at the interface of an AFM insulator-normal metal bilayer with a single skyrmion in the diffusive regime. To determine the spin and charge Hall currents, we employed a Boltzmann kinetic equation with both spin-dependent and spin-flip scatterings. The interaction between conduction electrons and static skyrmions is included in the Boltzmann equation via the corresponding emergent magnetic field arising from the skyrmion texture. We compute intrinsic and extrinsic contributions to the topological spin Hall effect and spin accumulation, induced by an AFM skyrmion. We show that although the spin Hall current vanishes rapidly outside the skyrmion, the spin accumulation can be finite at the edges far from the skyrmion, provided the spin diffusion length is longer than the skyrmion radius. In addition, We show that in the presence of a spin-dependent relaxation time, the topological charge Hall effect is finite and we determine the corresponding Hall voltage. Our results may help to explore antiferromagnetic skyrmions by electrical means in real materials.
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Submitted 4 January, 2024; v1 submitted 15 September, 2023;
originally announced September 2023.
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Spin waves in bilayers of transition-metal dichalcogenides
Authors:
Wojciech Rudziński,
Józef Barnaś,
Anna Dyrdał
Abstract:
Van der Waals magnetic materials are currently of great interest as materials for applications in future ultrathin nanoelectronics and nanospintronics. Due to weak coupling between individual monolayers, these materials can be easily obtained in the monolayer and bilayer forms. The latter are of specific interest as they may be considered as natural two-dimensional spin valves. In this paper, we s…
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Van der Waals magnetic materials are currently of great interest as materials for applications in future ultrathin nanoelectronics and nanospintronics. Due to weak coupling between individual monolayers, these materials can be easily obtained in the monolayer and bilayer forms. The latter are of specific interest as they may be considered as natural two-dimensional spin valves. In this paper, we study theoretically spin waves in bilayers of transition metal dichalcogenides. The considerations are carried within the general spin wave theory based on effective spin Hamiltonian and Hollstein-Primakoff-Bogolubov transformation. The spin Hamiltonian includes intra-layer as well as inter-layer nearest-neighbour exchange interactions, easy-plane anisotropy, and additionally a weak in-plane easy-axis anisotropy. The bilayer systems consist of two ferromagnetic (in-plane magnetization) monolayers that are coupled either ferromagnetically or antiferromagnetically. In the latter case, we analyse the spin wave spectra in all magnetic phases, i.e. in the antiferromagnetic, spin-flop, and ferromagnetic ones.
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Submitted 20 November, 2023; v1 submitted 25 July, 2023;
originally announced July 2023.
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Steering skyrmions with microwave and THz electric pulses
Authors:
Xi-guang Wang,
Guang-hua Guo,
V. K. Dugaev,
J. Barnaś,
J. Berakdar,
S. S. P. Parkin,
A. Ernst,
L. Chotorlishvili
Abstract:
Tools for controlling electrically the motion of magnetic skyrmions are important elements towards their use in spintronic devices. Here, we propose and demonstrate the transport of skyrmions via GHz and THz electric pulses. The method relies on using polarization textured pulses such that the skyrmion experiences (via its inherent magnetoelectricity) the out-of-plane and in-plane components of th…
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Tools for controlling electrically the motion of magnetic skyrmions are important elements towards their use in spintronic devices. Here, we propose and demonstrate the transport of skyrmions via GHz and THz electric pulses. The method relies on using polarization textured pulses such that the skyrmion experiences (via its inherent magnetoelectricity) the out-of-plane and in-plane components of the pulse electric field. It is shown how the electric field drags efficiently the skyrmion. The control of the skyrmion motion depends solely on the amplitude of electric fields, frequency, polarization, or phase in case two pulses are applied. Micromagnetic calculations supported by analytic modeling and analysis indicate the experimental feasibility of the control scheme.
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Submitted 16 March, 2023;
originally announced March 2023.
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Magnon-Plasmon Hybridization Mediated by Spin-Orbit Interaction in Magnetic Materials
Authors:
Anna Dyrdał,
Alireza Qaiumzadeh,
Arne Brataas,
Józef Barnaś
Abstract:
We propose a mechanism for magnon-plasmon coupling and hybridization in ferromagnetic (FM) and antiferromagnetic (AFM) systems. The electric field associated with plasmon oscillations creates a non-equilibrium spin density via the inverse spin galvanic effect. This plasmon-induced spin density couples to magnons by an exchange interaction. The strength of magnon-plasmon coupling depends on the mag…
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We propose a mechanism for magnon-plasmon coupling and hybridization in ferromagnetic (FM) and antiferromagnetic (AFM) systems. The electric field associated with plasmon oscillations creates a non-equilibrium spin density via the inverse spin galvanic effect. This plasmon-induced spin density couples to magnons by an exchange interaction. The strength of magnon-plasmon coupling depends on the magneto-electric susceptibility of the system and the wavevector at which the level repulsion is happened. This wavevector may be tuned by an applied magnetic field. In AFM systems, the degeneracy of two chiral magnons is broken in the presence of a magnetic field, and we find two separate hybrid modes for left-handed and right-handed AFM magnons. Furthermore, we show that magnon-plasmon coupling in AFM systems is enhanced because of strong intra-sublattice spin dynamics. We argue that the recently discovered two-dimensional magnetic systems are ideal platforms to investigate proposed magnon-plasmon hybrid modes.
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Submitted 12 December, 2022;
originally announced December 2022.
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Bilinear planar Hall effect in topological insulators due to spin-momentum locking inhomogeneity
Authors:
A. N. Zarezad,
J. Barnaś,
A. Qaiumzadeh,
A. Dyrdał
Abstract:
We study the effect of spin-momentum locking inhomogeneity on the planar Hall effect in topological insulators (TIs). Using the minimal model describing surface states of 3D TIs and semiclassical Boltzmann formalism, we have derived the planar Hall conductivity within the generalized relaxation time approximation. We have found that the total planar Hall conductivity is a sum of linear and nonline…
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We study the effect of spin-momentum locking inhomogeneity on the planar Hall effect in topological insulators (TIs). Using the minimal model describing surface states of 3D TIs and semiclassical Boltzmann formalism, we have derived the planar Hall conductivity within the generalized relaxation time approximation. We have found that the total planar Hall conductivity is a sum of linear and nonlinear to the external electric field components. The linear term is a conventional planar Hall conductivity which scales quadratically with an external magnetic field, whereas the nonlinear term reveals bilinear behaviour, i.e., changes its sign when either charge current density or in-plane magnetic field orientation is reversed. We have shown that the emergent nonlinear planar Hall effect is a consequence of spin-momentum locking inhomogeneity in the TIs with isotropic energy dispersion and dominates under the conventional planar Hall effect.
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Submitted 12 December, 2022;
originally announced December 2022.
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Skyrmion Echo in a system of interacting Skyrmions
Authors:
X. -G. Wang,
Guang-hua Guo,
A. Dyrdał,
J. Barnaś,
V. K. Dugaev,
S. S. P. Parkin,
A. Ernst,
L. Chotorlishvili
Abstract:
We consider helical rotation of skyrmions confined in the potentials formed by nano-disks. Based on numerical and analytical calculations we propose the skyrmion echo phenomenon. The physical mechanism of the skyrmion echo formation is also proposed. Due to the distortion of the lattice, impurities, or pinning effect, confined skyrmions experience slightly different local fields, which leads to de…
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We consider helical rotation of skyrmions confined in the potentials formed by nano-disks. Based on numerical and analytical calculations we propose the skyrmion echo phenomenon. The physical mechanism of the skyrmion echo formation is also proposed. Due to the distortion of the lattice, impurities, or pinning effect, confined skyrmions experience slightly different local fields, which leads to dephasing of the initial signal. The interaction between skyrmions also can contribute to the dephasing process. However, switching the magnetization direction in the nanodiscs (e.g. by spin transfer torque) also switches the helical rotation of the skyrmions from clockwise to anticlockwise (or vice-versa), and this restores the initial signal (which is the essence of skyrmion echo).
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Submitted 13 September, 2022;
originally announced September 2022.
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Skyrmion lattice hosted in synthetic antiferromagnets and helix modes
Authors:
X. -G. Wang,
L. Chotorlishvili,
G. Tatara,
A. Dyrdał,
Guang-hua Guo,
V. K. Dugaev,
J. Barnaś,
S. S. P. Parkin,
A. Ernst
Abstract:
Thin ferromagnetic films can possess unconventional magnetic properties, opening a new road for using them in spintronic technologies. In the present work exploiting three different methods, we comprehensively analyze phason excitations of a skyrmion lattice in synthetic antiferromagnets. To analyze phason excitations of the skyrmion lattice, we have constructed an analytical model based on three…
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Thin ferromagnetic films can possess unconventional magnetic properties, opening a new road for using them in spintronic technologies. In the present work exploiting three different methods, we comprehensively analyze phason excitations of a skyrmion lattice in synthetic antiferromagnets. To analyze phason excitations of the skyrmion lattice, we have constructed an analytical model based on three coupled helices and found a linear gapless mode. Micromagnetic simulations also support this result. Moreover, a similar result has been achieved within the rigid skyrmion lattice model based on the coupled Thiele's equations, when the coupling between skyrmions in different layers of the synthetic antiferromagnetic is comparable to or larger than the intralayer coupling. In addition, we also consider the orbital angular momentum and spin pum** current associated with phason excitations. Due to the gapless excitations in the case of skyrmion lattice, the pum** current is nonzero for the arbitrary frequency of pum** microwaves. In the case of individual skyrmions, no current is pumped when microwave frequency is inside the gap of the spectrum of individual skyrmions.
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Submitted 13 September, 2022;
originally announced September 2022.
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Rectification of the spin Seebeck current in noncollinear antiferromagnets
Authors:
L. Chotorlishvili,
Xi-guang Wang,
A. Dyrdal,
Guang-hua Guo,
V. K. Dugaev,
J. Barnas,
J. Berakdar
Abstract:
In the absence of an external magnetic field and a spin-polarized charge current, an antiferromagnetic system supports two degenerate magnon modes. An applied thermal bias activates the magnetic dynamics, leading to a magnon flow from the hot to the cold edge (magnonic spin Seebeck current). Both degenerate bands contribute to the magnon current but the orientations of the magnetic moments underly…
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In the absence of an external magnetic field and a spin-polarized charge current, an antiferromagnetic system supports two degenerate magnon modes. An applied thermal bias activates the magnetic dynamics, leading to a magnon flow from the hot to the cold edge (magnonic spin Seebeck current). Both degenerate bands contribute to the magnon current but the orientations of the magnetic moments underlying the magnons are opposite in different bands. Therefore, while the magnon current is nonzero, the net spin current is zero.
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Submitted 26 July, 2022;
originally announced July 2022.
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Spin valve effect in two-dimensional VSe$_2$ system
Authors:
M. A. Jafari,
M. Wawrzyniak-Adamczewska,
S. Stagraczyński,
A. Dyrdal,
J. Barnaś
Abstract:
Vanadium based dichalcogenides, VSe$_2$, are two-dimensional materials in which magnetic Vanadium atoms are arranged in a hexagonal lattice and are coupled ferromagnetically within the plane. However, adjacent atomic planes are coupled antiferromagnetically. This provides new and interesting opportunities for application in spintronics and data storage and processing technologies. A spin valve mag…
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Vanadium based dichalcogenides, VSe$_2$, are two-dimensional materials in which magnetic Vanadium atoms are arranged in a hexagonal lattice and are coupled ferromagnetically within the plane. However, adjacent atomic planes are coupled antiferromagnetically. This provides new and interesting opportunities for application in spintronics and data storage and processing technologies. A spin valve magnetoresistance may be achieved when magnetic moments of both atomic planes are driven to parallel alignment by an external magnetic field. The resistance change associated with the transition from antiparallel to the parallel configuration is qualitatively similar to that observed in artificially layered metallic magnetic structures. Detailed electronic structure of VSe$_2$ was obtained from DFT calculations. Then, the ballistic spin-valve magnetoresistance was determined within the Landauer formalism. In addition, we also analyze thermal and thermoelectric properties. Both phases of VSe$_2$, denoted as H and T, are considered.
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Submitted 20 January, 2022;
originally announced January 2022.
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Graphene with Rashba spin-orbit interaction and coupling to a magnetic layer: Electron states localized at the domain wall
Authors:
M. Inglot,
V. K. Dugaev,
A. Dyrdał,
J. Barnaś
Abstract:
Electron states localized at a magnetic domain wall in a graphene caplayer with Rashba spin-orbit interaction and coupled to a magnetic overlayer are studied theoretically. It is shown that two one-dimensional bands of edge modes propagating along the domain wall emerge in the energy gap for each Dirac point, and the modes associated with different Dirac points K and K' are the same. The coefficie…
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Electron states localized at a magnetic domain wall in a graphene caplayer with Rashba spin-orbit interaction and coupled to a magnetic overlayer are studied theoretically. It is shown that two one-dimensional bands of edge modes propagating along the domain wall emerge in the energy gap for each Dirac point, and the modes associated with different Dirac points K and K' are the same. The coefficients describing decay of the corresponding wavefunctions with distance from the domain wall contain generally real and imaginary terms. Numerical results on the local spin density and on the total spin expected in the edge states characterized by the wavenumber $k_y$ are presented and discussed. The Chern number for a single magnetic domain on graphene indicates that the system is in the quantum anomalous Hall phase, with two chiral modes at the edges. In turn, the number of modes localized at the domain wall is determined by the difference in Chern numbers on both sides of the wall. These numbers are equal to 2 and -2, respectively, so there are four modes localized at the domain wall.
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Submitted 9 December, 2021; v1 submitted 11 December, 2020;
originally announced December 2020.
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Determining the Rashba parameter from the bilinear magnetoresistance response in a two-dimensional electron gas
Authors:
D. C. Vaz,
F. Trier,
A. Dyrdał,
A. Johansson,
K. Garcia,
A. Barthélémy,
I. Mertig,
J. Barnaś,
A. Fert,
M. Bibes
Abstract:
Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is ex…
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Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is expanding. Conventionally, demanding techniques such as angle- and spin-resolved photoemission spectroscopy are required to determine the Rashba parameter $α_{R}$ that characterizes these systems. Here, we introduce a simple method that allows a quantitative extraction of $α_{R}$, through the analysis of the bilinear response of angle-dependent magnetotransport experiments. This method is based on the modulation of the Rashba-split bands under a rotating in-plane magnetic field. We show that our method is able to correctly yield the value of $α_{R}$ for a wide range of Fermi energies in the 2D electron gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface. By applying a gate voltage, we observe a maximum $α_{R}$ in the region of the band structure where interband effects maximize the Rashba effect, consistently with theoretical predictions.
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Submitted 7 July, 2020;
originally announced July 2020.
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Stratonovich-Ito integration scheme in ultrafast spin caloritronics
Authors:
L. Chotorlishvili,
Z. Toklikishvili,
X. -G. Wang,
V. K. Dugaev,
J. Barnaś,
J. Berakdar
Abstract:
The magnonic spin Seebeck effect is a key element of spin caloritronic, a field that exploits thermal effects for spintronic applications. Early studies were focused on investigating the steady-state nonequilibrium magnonic spin Seebeck current, and the underlying physics of the magnonic spin Seebeck effect is now relatively well established. However, the initial steps of the formation of the spin…
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The magnonic spin Seebeck effect is a key element of spin caloritronic, a field that exploits thermal effects for spintronic applications. Early studies were focused on investigating the steady-state nonequilibrium magnonic spin Seebeck current, and the underlying physics of the magnonic spin Seebeck effect is now relatively well established. However, the initial steps of the formation of the spin Seebeck current are in the scope of recent interest. To address this dynamical aspect theoretically we propose here a new approach to the time-resolved spin Seebeck effect. Our method exploits the supersymmetric theory of stochastics and Ito - Stratonovich integration scheme. We found that in the early step the spin Seebeck current has both nonzero transversal and longitudinal components. As the magnetization dynamics approaches the steady-state, the transversal components decay through dephasing over the dipole-dipole reservoir. The time scale for this process is typically in the sub-nanoseconds pointing thus to the potential of an ultrafast control of the dynamical spin Seebeck during its buildup.
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Submitted 19 June, 2020;
originally announced June 2020.
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The optical tweezer of ferroelectric skyrmions
Authors:
X. -G. Wang,
L. Chotorlishvili,
V. K. Dugaev,
A. Ernst,
I. Maznichenko,
N. Arnold,
Chenglong Jia,
J. Berakdar,
I. Mertig,
J. Barnaś
Abstract:
Strong magneto-electric coupling in two-dimensional helical materials leads to a peculiar type of topologically protected solutions -- skyrmions. Coupling between the net ferroelectric polarization and magnetization allows control of the magnetic texture with an external electric field. In this work we propose the model of optical tweezer -- a particular configuration of an external electric field…
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Strong magneto-electric coupling in two-dimensional helical materials leads to a peculiar type of topologically protected solutions -- skyrmions. Coupling between the net ferroelectric polarization and magnetization allows control of the magnetic texture with an external electric field. In this work we propose the model of optical tweezer -- a particular configuration of an external electric field and Gaussian laser beam that can trap or release the skyrmions in a highly controlled manner. Functionality of such a tweezer is visualized by micromagnetic simulations and model analysis.
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Submitted 6 January, 2020;
originally announced January 2020.
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Chiral Hall effect in the kink states in topological insulators with magnetic domain walls
Authors:
M. Sedlmayr,
N. Sedlmayr,
J. Barnaś,
V. K. Dugaev
Abstract:
In this article we consider the chiral Hall effect due to topologically protected kink states formed in topological insulators at boundaries between domains with differing topological invariants. Such systems include the surfaces of three dimensional topological insulators magnetically doped or in proximity with ferromagnets, as well as certain two dimensional topological insulators. We analyze th…
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In this article we consider the chiral Hall effect due to topologically protected kink states formed in topological insulators at boundaries between domains with differing topological invariants. Such systems include the surfaces of three dimensional topological insulators magnetically doped or in proximity with ferromagnets, as well as certain two dimensional topological insulators. We analyze the equilibrium charge current along the domain wall and show that it is equal to the sum of counter-propagating equilibrium currents flowing along external boundaries of the domains. In addition, we also calculate a dissipative current along the domain wall when an external voltage is applied perpendicularly to the wall.
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Submitted 22 April, 2020; v1 submitted 29 November, 2019;
originally announced November 2019.
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Theory of bi-linear magnetoresistance within the minimal model for surface states in topological insulators
Authors:
A. Dyrdał,
J. Barnaś,
A. Fert
Abstract:
A new mechanism of bi-linear magnetoresistance (BMR) is studied theoretically within the minimal model describing surface electronic states in topological insulators (TIs). The BMR appears as a consequence of the second-order response to electric field, and depends linearly on both electric field (current) and magnetic field. The mechanism is based on the interplay of current-induced spin polariza…
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A new mechanism of bi-linear magnetoresistance (BMR) is studied theoretically within the minimal model describing surface electronic states in topological insulators (TIs). The BMR appears as a consequence of the second-order response to electric field, and depends linearly on both electric field (current) and magnetic field. The mechanism is based on the interplay of current-induced spin polarization and scattering processes due to peculiar spin-orbit defects. The proposed mechanism is compared to that based on a Fermi surface war**, and is shown to be dominant at lower Fermi energies. We provide a consistent theoretical approach based on the Green function formalism and show that the magnetic field dependent relaxation processes in the presence of non-equilibrium current-induced spin polarization give rise to the BMR.
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Submitted 22 August, 2019;
originally announced August 2019.
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Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets
Authors:
Łukasz Karwacki,
Krzysztof Grochot,
Stanisław Łazarski,
Witold Skowroński,
Jarosław Kanak,
Wiesław Powroźnik,
Józef Barnaś,
Feliks Stobiecki,
Tomasz Stobiecki
Abstract:
We revisit the theory and experiment on spin Hall magnetoresistance (SMR) in bilayers consisting of a heavy metal (H) coupled to in-plane magnetized ferromagnetic metal (F), and determine contributions to the magnetoresistance due to SMR and anisotropic magnetoresistance (AMR) in four different bilayer systems: W/$\text{Co}_{20}\text{Fe}_{60}\text{B}_{20}$, W/Co,…
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We revisit the theory and experiment on spin Hall magnetoresistance (SMR) in bilayers consisting of a heavy metal (H) coupled to in-plane magnetized ferromagnetic metal (F), and determine contributions to the magnetoresistance due to SMR and anisotropic magnetoresistance (AMR) in four different bilayer systems: W/$\text{Co}_{20}\text{Fe}_{60}\text{B}_{20}$, W/Co, $\text{Co}_{20}\text{Fe}_{60}\text{B}_{20}$/Pt, and Co/Pt. To do this, the AMR is explicitly included in the diffusion transport equations in the ferromagnet. The results allow precise determination of different contributions to the magnetoresistance, which can play an important role in optimizing prospective magnetic stray field sensors. They also may be useful in the determination of spin transport properties of metallic magnetic heterostructures in other experiments based on magnetoresistance measurements.
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Submitted 11 August, 2019;
originally announced August 2019.
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Conduction of surface electrons in a topological insulator with spatially random magnetization
Authors:
S. Kudła,
A. Dyrdał,
V. K. Dugaev,
J. Berakdar,
J. Barnaś
Abstract:
Using the Green functions method we study transport properties of surface electrons in topological insulators in the presence of a correlated random exchange field. Such an exchange field may be due to random magnetization with correlated fluctuations. We determine the relaxation time due to scattering from the magnetization fluctuations and from other structural defects. Then we calculate the lon…
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Using the Green functions method we study transport properties of surface electrons in topological insulators in the presence of a correlated random exchange field. Such an exchange field may be due to random magnetization with correlated fluctuations. We determine the relaxation time due to scattering from the magnetization fluctuations and from other structural defects. Then we calculate the longitudinal charge conductivity taking into account the contribution due to vertex correction.
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Submitted 11 July, 2019;
originally announced July 2019.
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Influence of spin-orbit and spin-Hall effects on the spin Seebeck current beyond linear response
Authors:
L. Chotorlishvili,
Z. Toklikishvili,
X. -G. Wang,
V. K. Dugaev,
J. Barnas,
J. Berakdar
Abstract:
We study the spin transport theoretically in heterostructures consisting of a ferromagnetic metallic thin film sandwiched between heavy-metal and oxide layers. The spin current in the heavy metal layer is generated via the spin Hall effect, while the oxide layer induces at the interface with the ferromagnetic layer a spin-orbital coupling of the Rashba type. Impact of the spin Hall effect and Rash…
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We study the spin transport theoretically in heterostructures consisting of a ferromagnetic metallic thin film sandwiched between heavy-metal and oxide layers. The spin current in the heavy metal layer is generated via the spin Hall effect, while the oxide layer induces at the interface with the ferromagnetic layer a spin-orbital coupling of the Rashba type. Impact of the spin Hall effect and Rashba spin-orbit coupling on the spin Seebeck current is explored with a particular emphasis on nonlinear effects. Technically, we employ the Fokker-Planck approach and contrast the analytical expressions with full numerical micromagnetic simulations. We show that when an external magnetic field is aligned parallel (antiparallel) to the Rashba field, the spin-orbit coupling enhances (reduces) the spin pum** current. In turn, the spin Hall effect and the Dzyaloshinskii-Moriya interaction are shown to increase the spin pum** current.
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Submitted 21 December, 2018;
originally announced December 2018.
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Klein tunnelling and Hartman effect in graphene junctions with proximity exchange field
Authors:
Jędrzej Tepper,
Józef Barnaś
Abstract:
Tunnelling of electrons in graphene-based junctions is studied theoretically. Graphene is assumed to be deposited either directly on a ferromagnetic insulator or on a few atomic layers of boron nitride which separate graphene from a metallic ferromagnetic substrate. Such junctions can be formed by appropriate external gating of the corresponding system. To describe low-energy electronic states nea…
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Tunnelling of electrons in graphene-based junctions is studied theoretically. Graphene is assumed to be deposited either directly on a ferromagnetic insulator or on a few atomic layers of boron nitride which separate graphene from a metallic ferromagnetic substrate. Such junctions can be formed by appropriate external gating of the corresponding system. To describe low-energy electronic states near the Dirac points, certain effective Hamiltonians available in the relevant literature are used. These Hamiltonians include staggered potential and exchange interaction due to ferromagnetic substrates. Tunnelling in the systems under consideration is then spin-dependent. The main focus is on Klein tunnelling and also on the group delay and the associated Hartman effect. The impact of a gap induced in the spectrum at the Dirac points on tunnelling is analysed in detail.
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Submitted 4 December, 2018;
originally announced December 2018.
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Determination of spin Hall angle in heavy metal/CoFeB-based heterostructures with interfacial spin-orbit fields
Authors:
Witold Skowroński,
Łukasz Karwacki,
Sławomir Ziętek,
Jarosław Kanak,
Stanisław Łazarski,
Krzysztof Grochot,
Tomasz Stobiecki,
Piotr Kuświk,
Feliks Stobiecki,
Józef Barnaś
Abstract:
Magnetization dynamics in W/CoFeB, CoFeB/Pt and W/CoFeB/Pt multilayers was investigated using spin-orbit-torque ferromagnetic resonance (SOT-FMR) technique. An analytical model based on magnetization dynamics due to SOT was used to fit heavy metal (HM) thickness dependence of symmetric and antisymmetric components of the SOT-FMR signal. The analysis resulted in a determination of the properties of…
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Magnetization dynamics in W/CoFeB, CoFeB/Pt and W/CoFeB/Pt multilayers was investigated using spin-orbit-torque ferromagnetic resonance (SOT-FMR) technique. An analytical model based on magnetization dynamics due to SOT was used to fit heavy metal (HM) thickness dependence of symmetric and antisymmetric components of the SOT-FMR signal. The analysis resulted in a determination of the properties of HM layers, such as spin Hall angle and spin diffusion length. The spin Hall angle of -0.36 and 0.09 has been found in the W/CoFeB and CoFeB/Pt bilayers, respectively, which add up in the case of W/CoFeB/Pt trilayer. More importantly, we have determined effective interfacial spin-orbit fields at both W/CoFeB and CoFeB/Pt interfaces, which are shown to cancel Oersted field for particular thicknesses of the heavy metal layers, leading to pure spin-current-induced dynamics and indicating the possibility for a more efficient magnetization switching.
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Submitted 1 October, 2018;
originally announced October 2018.
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Charge and spin conductivity of a two-dimensional electron gas with random Rashba interaction
Authors:
S. Kudla,
A. Dyrdal,
V. K. Dugaev,
E. Ya. Sherman,
J. Barnas
Abstract:
We calculate the transport relaxation time $τ_{\rm tr}$ and spin transport relaxation time $τ_{s,{\rm tr}}$ for a two-dimensional electron gas with spatially fluctuating Rashba spin-orbit interaction. These relaxation times determine the electrical and spin conductivity of the two-dimensional system, respectively. It is shown that the transport relaxation time $τ_{\rm tr}$ is a nonmonotonic functi…
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We calculate the transport relaxation time $τ_{\rm tr}$ and spin transport relaxation time $τ_{s,{\rm tr}}$ for a two-dimensional electron gas with spatially fluctuating Rashba spin-orbit interaction. These relaxation times determine the electrical and spin conductivity of the two-dimensional system, respectively. It is shown that the transport relaxation time $τ_{\rm tr}$ is a nonmonotonic function of electron energy $\varepsilon $, whereas the spin transport relaxation time $τ_{s,{\rm tr}}$ decreases with increasing $\varepsilon $, similarly to the conventional electron relaxation time $τ$ that characterizes the decay of an electron state corresponding to certain values of the momentum and spin. Such a behavior of the relaxation times leads to unusual temperature dependence of the electrical and spin conductivity.
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Submitted 15 April, 2018;
originally announced April 2018.
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Hartman effect for spin waves in exchange regime
Authors:
Jaroslaw W. Klos,
Yulia S. Dadoenkova,
Justyna Rychly,
Nataliya N. Dadoenkova,
Igor L. Lyubchanskii,
Jozef Barnas
Abstract:
Hartman effect for spin waves tunnelling through a barrier in a thin magnetic film is considered theoretically. The barrier is assumed to be created by a locally increased magnetic anisotropy field. The considerations are focused on a nanoscale system operating in the exchange-dominated regime. We derive the formula for group delay $τ_{gr}$ of spin wave package and show that $τ_{gr}$ saturates wit…
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Hartman effect for spin waves tunnelling through a barrier in a thin magnetic film is considered theoretically. The barrier is assumed to be created by a locally increased magnetic anisotropy field. The considerations are focused on a nanoscale system operating in the exchange-dominated regime. We derive the formula for group delay $τ_{gr}$ of spin wave package and show that $τ_{gr}$ saturates with increasing barrier width, which is a signature of the Hartman effect predicted earlier for photonic and electronic systems. In our calculations we consider the general boundary exchange conditions which take into account different strength of exchange coupling between the barrier and its surrounding. As a system suitable for experimental observation of the Hartman effect we propose a CoFeB layer with perpendicular magnetic anisotropy induced by a MgO overlayer.
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Submitted 20 July, 2018; v1 submitted 17 January, 2018;
originally announced January 2018.
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Thermoelectric properties of a quantum dot coupled to magnetic leads by Rashba spin-orbit interaction
Authors:
Łukasz Karwacki,
Józef Barnaś
Abstract:
We consider a single-level quantum dot coupled to two leads which are ferromagnetic in general. Apart from tunneling processes conserving electron spin, we also include processes associated with spin-flip of tunneling electrons, which appear due to Rashba spin-orbit coupling. Charge and heat currents are calculated within the non-equilibrium Green's function technique. When the electrodes are half…
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We consider a single-level quantum dot coupled to two leads which are ferromagnetic in general. Apart from tunneling processes conserving electron spin, we also include processes associated with spin-flip of tunneling electrons, which appear due to Rashba spin-orbit coupling. Charge and heat currents are calculated within the non-equilibrium Green's function technique. When the electrodes are half-metallic (fully spin polarized), the Rashba spin-orbit coupling leads to Fano-like interference effects, which result in an enhanced thermoelectric response. It is also shown that such a system can operate as efficient heat engine. Furthermore, the interplay of Rashba spin-orbit coupling and Zeeman splitting due to an external magnetic field is shown to allow control over such parameters of the heat engine as the power and efficiency.
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Submitted 11 January, 2018;
originally announced January 2018.
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Current-induced spin polarization in isotropic k-cubed Rashba model: Theoretical study for p-doped semiconductor heterostructures and perovskite oxides interfaces
Authors:
L. Karwacki,
A. Dyrdal,
J. Berakdar,
J. Barnas
Abstract:
Using the Matsubara Green's function formalism we calculate the temperature dependence of the nonequilibrium spin polarization induced by an external electric field in the presence of spin-orbit coupling. The model Hamiltonian includes an isotropic k-cubed form of the Rashba spin-orbit interaction. Such a Hamiltonian captures the electronic and spin properties of two-dimensional electron (hole) ga…
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Using the Matsubara Green's function formalism we calculate the temperature dependence of the nonequilibrium spin polarization induced by an external electric field in the presence of spin-orbit coupling. The model Hamiltonian includes an isotropic k-cubed form of the Rashba spin-orbit interaction. Such a Hamiltonian captures the electronic and spin properties of two-dimensional electron (hole) gas at the surfaces or interfaces of transition metal oxides or in p-doped semiconductor heterostructures. The induced spin polarization is calculated for the nonmagnetic as well as magnetic electron/hole gas. Relation of the spin polarization to the Berry curvature is also discussed.
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Submitted 21 November, 2017;
originally announced November 2017.
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Thermally-induced spin polarization in a magnetized two-dimensional electron gas with Rashba spin-orbit interaction
Authors:
A. Dyrdal,
J. Barnas,
V. K. Dugaev,
J. Berakdar
Abstract:
Spin polarization induced by a temperature gradient (heat-current) in a magnetized two-dimensional electron gas (2DEG) with Rashba spin-orbit interaction is considered theoretically within the linear response theory. Using the Matsubara Green function formalism we calculate the temperature dependence of the spin polarization for arbitrary orientation of the exchange field. The limit of a nonmagnet…
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Spin polarization induced by a temperature gradient (heat-current) in a magnetized two-dimensional electron gas (2DEG) with Rashba spin-orbit interaction is considered theoretically within the linear response theory. Using the Matsubara Green function formalism we calculate the temperature dependence of the spin polarization for arbitrary orientation of the exchange field. The limit of a nonmagnetic 2DEG (zero exchange field) is also considered. The physical mechanisms of the spin polarization within our scheme are discussed.
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Submitted 21 November, 2017;
originally announced November 2017.
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Magnon transport through a quantum dot: Conversion to electronic spin and charge currents
Authors:
Łukasz Karwacki,
Piotr Trocha,
Józef Barnaś
Abstract:
We consider a single-level quantum dot coupled to magnetic insulators (magnonic reservoirs) and magnetic metals (electronic reservoirs). The whole system is in an external magnetic field. In a general case, the system includes two magnonic and two electronic reservoirs, but we also present results for some specific situations, where only two or three reservoirs are effectively connected to the dot…
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We consider a single-level quantum dot coupled to magnetic insulators (magnonic reservoirs) and magnetic metals (electronic reservoirs). The whole system is in an external magnetic field. In a general case, the system includes two magnonic and two electronic reservoirs, but we also present results for some specific situations, where only two or three reservoirs are effectively connected to the dot. The main objective is the analysis of the conversion of magnon current to electronic spin and charge currents, and {\it vice versa}. We consider the limiting case of large Coulomb energy in the dot (Coulomb blockade), as well as the case when the Coulomb energy is finite and double occupancy is allowed.
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Submitted 19 June, 2017;
originally announced June 2017.
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Field- and temperature-modulated spin-diode effect in a GMR nanowire with dipolar coupling
Authors:
Piotr Ogrodnik,
Tomasz Stobiecki,
Józef Barnaś,
Marek Frankowski,
Jakub Chęciński,
Francesco Antonio Vetrò,
Jean-Philippe Ansermet
Abstract:
An analytical model of the spin-diode effect induced by resonant spin-transfer torque in a ferromagnetic bilayer with strong dipolar coupling provides the resonance frequencies and the lineshapes of the magnetic field spectra obtained under field or laser-light modulation. The effect of laser irradiation is accounted for by introducing the temperature dependence of the saturation magnetization and…
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An analytical model of the spin-diode effect induced by resonant spin-transfer torque in a ferromagnetic bilayer with strong dipolar coupling provides the resonance frequencies and the lineshapes of the magnetic field spectra obtained under field or laser-light modulation. The effect of laser irradiation is accounted for by introducing the temperature dependence of the saturation magnetization and anisotropy, as well as thermal spin-transfer torques. The predictions of the model are compared with experimental data obtained with single Co/Cu/Co spin valves, embedded in nanowires and produced by electrodeposition. Temperature modulation provides excellent signal-to-noise ratio. High temperature-modulation frequency is possible because these nanostructures have a very small heat capacity and are only weakly heat-sunk. The two forms of modulation give rise to qualitative differences in the spectra that are accounted for by the model.
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Submitted 4 June, 2017;
originally announced June 2017.
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Anomalous, spin, and valley Hall effects in graphene deposited on ferromagnetic substrates
Authors:
A. Dyrdał,
J. Barnaś
Abstract:
Spin, anomalous, and valley Hall effects in graphene-based hybrid structures are studied theoretically within the Green function formalism and linear response theory. Two different types of hybrid systems are considered in detail: (i) graphene/boron nitride/cobalt(nickel), and (ii) graphene/YIG. The main interest is focused on the proximity-induced exchange interaction between graphene and magneti…
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Spin, anomalous, and valley Hall effects in graphene-based hybrid structures are studied theoretically within the Green function formalism and linear response theory. Two different types of hybrid systems are considered in detail: (i) graphene/boron nitride/cobalt(nickel), and (ii) graphene/YIG. The main interest is focused on the proximity-induced exchange interaction between graphene and magnetic substrate and on the proximity-enhanced spin-orbit coupling. The proximity effects are shown to have a significant influence on the electronic and spin transport properties of graphene. To find the spin, anomalous and valley Hall conductivities we employ certain effective Hamiltonians which have been proposed recently for the hybrid systems under considerations. Both anomalous and valley Hall conductivities have universal values when the Fermi level is inside the energy gap in the electronic spectrum.
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Submitted 9 May, 2017;
originally announced May 2017.
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Spin-dependent thermoelectric phenomena in a quantum dot attached to ferromagnetic and superconducting electrodes
Authors:
Piotr Trocha,
Józef Barnaś
Abstract:
We investigate transport and thermoelectric properties of hybrid systems based on a single-level quantum dot and one superconducting lead. The other lead is generally normal-metallic ferromagnet. In the latter case single-particle transport is spin-polarized. Our main interest is in the interplay of Andreev tunneling of Cooper pairs and single-particle tunneling. The latter is responsible for rela…
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We investigate transport and thermoelectric properties of hybrid systems based on a single-level quantum dot and one superconducting lead. The other lead is generally normal-metallic ferromagnet. In the latter case single-particle transport is spin-polarized. Our main interest is in the interplay of Andreev tunneling of Cooper pairs and single-particle tunneling. The latter is responsible for relatively large thermopower and figure of merit due to a diverging density of single-particle states at the superconducting gap edges. System with ferromagnetic and superconducting leads can also reveal spin thermoelectric phenomena. Finite superconducting gap is considered within the BCS theory, and the thermoelectric coefficients are calculated by means of nonequilibrium Green's function technique within Hartree-Fock like approximation with respect to the intradot Coulomb interaction.
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Submitted 2 May, 2017;
originally announced May 2017.
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Current-induced spin polarization of a magnetized two-dimensional electron gas with Rashba spin-orbit interaction
Authors:
A. Dyrdal,
J. Barnas,
V. K. Dugaev
Abstract:
Current-induced spin polarization in a two-dimensional electron gas with Rashba spin-orbit interaction is considered theoretically in terms of the Matsubara Green functions. This formalism allows to describe temperature dependence of the induced spin polarization. The electron gas is assumed to be coupled to a magnetic substrate via exchange interaction. Analytical and numerical results on the tem…
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Current-induced spin polarization in a two-dimensional electron gas with Rashba spin-orbit interaction is considered theoretically in terms of the Matsubara Green functions. This formalism allows to describe temperature dependence of the induced spin polarization. The electron gas is assumed to be coupled to a magnetic substrate via exchange interaction. Analytical and numerical results on the temperature dependence of spin polarization have been obtained in the linear response regime. The spin polarization has been presented as a sum of two terms - one proportional to the relaxation time and the other related to the Berry phase corresponding to the electronic bands of the magnetized Rashba gas. The spin-orbit torque due to Rashba interaction is also discussed. Such a torque appears as a result of the exchange coupling between the non-equilibrium spin polarization and magnetic moment of the underlayer.
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Submitted 27 February, 2017;
originally announced February 2017.
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Shot noise in magnetic tunneling structures with two-level quantum dots
Authors:
T. Szczepanski,
V. K. Dugaev,
J. Barnas,
I. Martinez,
J. P. Cascales,
J. -Y. Hong,
M. -T. Lin,
F. G. Aliev
Abstract:
We analyze shot noise in a magnetic tunnel junction with a two-level quantum dot attached to the magnetic electrodes. The considerations are limited to the case when some transport channels are suppressed at low temperatures. Coupling of the two dot's levels to the electrodes are assumed to be generally different and also spin-dependent. To calculate the shot noise we apply the approach based on t…
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We analyze shot noise in a magnetic tunnel junction with a two-level quantum dot attached to the magnetic electrodes. The considerations are limited to the case when some transport channels are suppressed at low temperatures. Coupling of the two dot's levels to the electrodes are assumed to be generally different and also spin-dependent. To calculate the shot noise we apply the approach based on the full counting statistics. The approach is used to account for experimental data obtained in magnetic tunnel junctions with organic barriers. The experimentally observed Fano factors correspond to the super-Poissonian statistics, and also depend on relative orientation of the electrodes' magnetic moments. We have also calculated the corresponding spin shot noise, which is associated with fluctuations of spin current.
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Submitted 9 January, 2017;
originally announced January 2017.
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Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures
Authors:
Monika Cecot,
Lukasz Karwacki,
Witold Skowronski,
Jaroslaw Kanak,
Jerzy Wrona,
Antoni Zywczak,
Lide Yao,
Sebastiaan van Dijken,
Jozef Barnas,
Tomasz Stobiecki
Abstract:
We investigate the spin Hall effect in perpendicularly magnetized Ta/Co40Fe40B20/MgO trilayers with Ta underlayers thicker than the spin diffusion length. The crystallographic structures of the Ta layer and Ta/CoFeB interface are examined in detail using X-ray diffraction and transmission electron microscopy. The thinnest Ta underlayer is amorphous, whereas for thicker Ta layers a disoriented tetr…
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We investigate the spin Hall effect in perpendicularly magnetized Ta/Co40Fe40B20/MgO trilayers with Ta underlayers thicker than the spin diffusion length. The crystallographic structures of the Ta layer and Ta/CoFeB interface are examined in detail using X-ray diffraction and transmission electron microscopy. The thinnest Ta underlayer is amorphous, whereas for thicker Ta layers a disoriented tetragonal beta-phase appears. Effective spin-orbit torques are calculated based on harmonic Hall voltage measurements performed in a temperature range between 15 and 300 K. To account for the temperature dependence of dam**-like and field-like torques, we extend the spin diffusion model by including an additional contribution from the Ta/CoFeB interface. Based on this approach, the temperature dependence of the spin Hall angle in the Ta underlayer and at Ta/CoFeB interface are determined separately. The results indicate an almost temperature-independent spin Hall angle of theta_SH-N = -0.2 in Ta and a strongly temperature-dependent theta_SH-I for the intermixed Ta/CoFeB interface.
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Submitted 9 December, 2016;
originally announced December 2016.
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Spin-resolved orbital magnetization in Rashba two-dimensional electron gas
Authors:
A. Dyrdał,
V. K. Dugaev,
J. Barnaś
Abstract:
We calculate orbital spin-dependent magnetization in a two-dimensional electron gas with spin-orbit interaction of Rashba type. Such an orbital magnetization is admitted by the time-reversal symmetry of the system, and gives rise to spin currents when the system is not in thermal equilibrium. The theoretical approach is based on the linear response theory and the Matsubara Green's function formali…
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We calculate orbital spin-dependent magnetization in a two-dimensional electron gas with spin-orbit interaction of Rashba type. Such an orbital magnetization is admitted by the time-reversal symmetry of the system, and gives rise to spin currents when the system is not in thermal equilibrium. The theoretical approach is based on the linear response theory and the Matsubara Green's function formalism. To account for the spin-resolved orbital magnetization a spin-dependent vector potential has been introduced. The spin currents which appear in thermal nonequilibrium due to the spin-resolved orbital magnetization play an important role in the spin Nernst effect, and have to be included in order to correctly describe the low-temperature spin Nernst conductivity.
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Submitted 2 September, 2016;
originally announced September 2016.
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Thermally induced magnonic spin current, thermomagnonic torques and domain wall dynamics in the presence of Dzyaloshinskii-Moriya interaction
Authors:
X. -G. Wang,
L. Chotorlishvili,
G. -H. Guo,
A. Sukhov,
V. Dugaev,
J. Barnas,
J. Berakdar
Abstract:
Thermally activated domain wall (DW) motion in magnetic insulators has been considered theoretically, with a particular focus on the role of Dzyaloshinskii-Moriya Interaction (DMI) and thermomagnonic torques. The thermally assisted DW motion is a consequence of the magnonic spin current due to the applied thermal bias. In addition to the exchange magnonic spin current and the exchange adiabatic an…
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Thermally activated domain wall (DW) motion in magnetic insulators has been considered theoretically, with a particular focus on the role of Dzyaloshinskii-Moriya Interaction (DMI) and thermomagnonic torques. The thermally assisted DW motion is a consequence of the magnonic spin current due to the applied thermal bias. In addition to the exchange magnonic spin current and the exchange adiabatic and the entropic spin transfer torques, we also consider the DMI-induced magnonic spin current, thermomagnonic DMI field-like torque and the DMI entropic torque. Analytical estimations are supported by numerical calculations. We found that the DMI has a substantial influence on the size and the geometry of DWs, and that the DWs become oriented parallel to the long axis of the nanostrip. Increasing the temperature smoothes the DWs. Moreover, the thermallyinduced magnonic current generates a torque on the DWs, which is responsible for their motion. From our analysis it follows that for a large enough DMI the influence of DMI-induced field-like torque is much stronger than that of the DMI and the exchange entropic torques. By manipulating the strength of the DMI constant, one can control the speed of the DW motion, and the direction of the DW motion can be switched, as well. We also found that DMI not only contributes to the total magnonic current, but also it modifies the exchange magnonic spin current, and this modification depends on the orientation of the steady state magnetization. The observed phenomenon can be utilized in spin caloritronics devices, for example in the DMI based thermal diodes. By switching the magnetization direction, one can rectify the total magnonic spin current.
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Submitted 22 August, 2016;
originally announced August 2016.
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Electric-field tunable spin diode FMR in patterned PMN-PT/NiFe structures
Authors:
Sławomir Ziętek,
Piotr Ogrodnik,
Witold Skowroński,
Feliks Stobiecki,
Sebastiaan van Dijken,
Józef Barnaś,
Tomasz Stobiecki
Abstract:
Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunabi…
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Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunability of up to 100 MHz per 1 kV/cm is achieved. An analytical model based on total energy minimization and the LLG equation, with magnetostriction effect taken into account, is developed to explain the measured dynamics. Based on this model, conditions for strong electric-field tunable spin diode FMR in patterned NiFe/PMN-PT structures are derived.
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Submitted 19 May, 2016;
originally announced May 2016.
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Two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ inteface with a potential barrier
Authors:
V. A. Stephanovich,
V. K. Dugaev,
J. Barnaś
Abstract:
We present a tight binding description of electronic properties of the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO). The description assumes LAO and STO perovskites as sets of atomic layers in the $x$-$y$ plane, which are weakly coupled by an interlayer hop** term along the $z$ axis. The interface is described by an additional potential, $U_0$, which simulates a planar defect. Physicall…
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We present a tight binding description of electronic properties of the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO). The description assumes LAO and STO perovskites as sets of atomic layers in the $x$-$y$ plane, which are weakly coupled by an interlayer hop** term along the $z$ axis. The interface is described by an additional potential, $U_0$, which simulates a planar defect. Physically, the interfacial potential can result from either a mechanical stress at the interface or other structural imperfections. We show that depending on the potential strength, charge carriers (electrons or holes) may form an energy band which is localized at the interface and is within the band gaps of the constituting materials (LAO and STO). Moreover, our description predicts a {\it valve effect} at a certain critical potential strength, $U_{0cr}$, when the interface potential works as a valve suppressing the interfacial conductivity. In other words, the interfacial electrons become dispersionless at $U_0= U_{0cr}$, and thus cannot propagate. This critical value separates the {\it quasielectron} ($U_0<$ $U_{0cr}$) and {\it quasihole} ($U_0>$ $U_{0cr}$) regimes of the interfacial conductivity.
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Submitted 26 October, 2015;
originally announced October 2015.
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Spin Hall and spin Nernst effects in a two-dimensional electron gas with Rashba spin-orbit interaction: temperature dependence
Authors:
A. Dyrdał,
J. Barnaś,
V. K. Dugaev
Abstract:
Using the Matsubara Green function formalism we calculate the temperature dependence of spin Hall and spin Nernst conductivities of a two-dimensional electron gas with Rashba spin-orbit interaction in the linear response regime. In the case of spin Nernst effect we also include the contribution from spin-resolved orbital magnetization, which assures correct behavior of the spin Nernst conductivity…
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Using the Matsubara Green function formalism we calculate the temperature dependence of spin Hall and spin Nernst conductivities of a two-dimensional electron gas with Rashba spin-orbit interaction in the linear response regime. In the case of spin Nernst effect we also include the contribution from spin-resolved orbital magnetization, which assures correct behavior of the spin Nernst conductivity in the zero-temperature limit. Analytical formulas for the spin Hall and spin Nernst conductivities are derived in some specific situations. Using the Ioffe-Regel localization criterion, we have also estimated the range of parameters where the calculated results for the spin Hall and spin Nernst conductivities are applicable. Analytical results show that the vertex correction totally suppresses the spin Hall conductivity at arbitrary temperature. The spin Nernst conductivity, in turn, vanishes at $T=0$ when the orbital contribution is taken into account, but generally is nonzero at finite temperatures.
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Submitted 31 May, 2016; v1 submitted 11 October, 2015;
originally announced October 2015.
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Magnon-driven longitudinal spin Seebeck effect in F|N and N|F|N structures: role of asymmetric in-plane magnetic anisotropy
Authors:
L. Chotorlishvili,
Z. Toklikishvili,
S. R. Etesami,
V. K. Dugaev,
J. Barnas,
J. Berakdar
Abstract:
The influence of an asymmetric in-plane magnetic anisotropy on the thermally activated spin current is studied theoretically for two different systems; (i) the system consisting of a ferromagnetic insulator in a direct contact with a nonmagnetic metal, and the sandwich structure consisting of a ferromagnetic insulating part sandwiched between two nonmagnetic metals. It is shown that when the diffe…
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The influence of an asymmetric in-plane magnetic anisotropy on the thermally activated spin current is studied theoretically for two different systems; (i) the system consisting of a ferromagnetic insulator in a direct contact with a nonmagnetic metal, and the sandwich structure consisting of a ferromagnetic insulating part sandwiched between two nonmagnetic metals. It is shown that when the difference between the temperatures of the two nonmagnetic metals in a structure is not large, the spin pum** currents from the magnetic part to the nonmagnetic ones are equal in amplitude and have opposite directions, so only the spin torque current contributes to the total spin current. The spin current flows then from the nonmagnetic metal with the higher temperature to the nonmagnetic metal having a lower temperature. Its amplitude varies linearly with the difference in temperatures. In addition, we have found that if the magnetic anisotropy is in the layer plane, then the spin current increases with the magnon temperature, while in the case of an out-of-plane magnetic anisotropy the spin current decreases when the magnon temperature enhances. Enlarging the difference between the temperatures of the nonmagnetic metals, the linear response becomes important, as confirmed by analytical expressions inferred from the Fokker-Planck approach and by the results obtained upon a full numerical integration of the stochastic Landau-Lifshitz-Gilbert equation.
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Submitted 1 September, 2015;
originally announced September 2015.
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Transport through graphene-like flakes with intrinsic spin orbit interactions
Authors:
I. Weymann,
J. Barnas,
S. Krompiewski
Abstract:
It has been shown recently [J. L. Lado et al., Phys. Rev. Lett. 113, 027203 (2014)] that edge magnetic moments in graphene-like nanoribbons are strongly influenced by the intrinsic spin-orbit interaction. Due to this interaction an anisotropy comes about which makes the in-plane arrangement of magnetic moments energetically more favorable than that corresponding to the out-of-plane configuration.…
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It has been shown recently [J. L. Lado et al., Phys. Rev. Lett. 113, 027203 (2014)] that edge magnetic moments in graphene-like nanoribbons are strongly influenced by the intrinsic spin-orbit interaction. Due to this interaction an anisotropy comes about which makes the in-plane arrangement of magnetic moments energetically more favorable than that corresponding to the out-of-plane configuration. In this paper we raise both the edge magnetism problem as well as differential conductance and shot noise Fano factor issues, in the context of finite-size flakes within the Coulomb blockade (CB) transport regime. Our findings elucidate the following problems: (i) modification of the CB diamonds by the appearance of the in-plane magnetic moments, (ii) modification of the CB diamonds by intrinsic spin-orbit interaction.
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Submitted 27 July, 2015;
originally announced July 2015.
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Zigzag nanoribbons of two-dimensional hexagonal crystals: magnetic, topological and thermoelectric properties
Authors:
Michal Wierzbicki,
Jozef Barnas,
Renata Swirkowicz
Abstract:
Effects of electron-electron and spin-orbit interactions on the ground-state magnetic configuration and on the corresponding thermoelectric and spin thermoelectric properties in zigzag nanoribbons of two-dimensional hexagonal crystals are analyzed theoretically. Thermoelectric properties of quasi-stable magnetic states are also considered. Of particular interest is the influence of Coulomb and spi…
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Effects of electron-electron and spin-orbit interactions on the ground-state magnetic configuration and on the corresponding thermoelectric and spin thermoelectric properties in zigzag nanoribbons of two-dimensional hexagonal crystals are analyzed theoretically. Thermoelectric properties of quasi-stable magnetic states are also considered. Of particular interest is the influence of Coulomb and spin-orbit interactions on the topological edge states and on the transition between the topological insulator and conventional gap insulator states. It is shown that the interplay of both interactions has also a significant impact on transport and thermoelectric characteristics of the nanoribbons. The spin-orbit interaction additionally determines an in-plane magnetic easy axis. Thermoelectric properties of the nanoribbons with in-plane magnetic moments are compared with those of the nanoribbons with edge magnetic moments oriented perpendicularly to their plane. Nanoribbons with ferromagnetic alignment of the edge moments are shown to reveal spin thermoelectricity, in addition to the conventional one.
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Submitted 7 July, 2015;
originally announced July 2015.
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Current-induced spin polarization and spin-orbit torque in graphene
Authors:
A. Dyrdal,
J. Barnas
Abstract:
Using the Green function formalism we calculate a current-induced spin polarization of weakly magnetized graphene with Rashba spin-orbit interaction. In a general case, all components of the current-induced spin polarization are nonzero, contrary to the nonmagnetic limit, where the only nonvanishing component of spin polarization is that in the graphene plane and normal to electric field. When the…
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Using the Green function formalism we calculate a current-induced spin polarization of weakly magnetized graphene with Rashba spin-orbit interaction. In a general case, all components of the current-induced spin polarization are nonzero, contrary to the nonmagnetic limit, where the only nonvanishing component of spin polarization is that in the graphene plane and normal to electric field. When the induced spin polarization is exchange-coupled to the magnetization, it exerts a spin-orbit torque on the latter. Using the Green function method we have derived some analytical formulas for the spin polarization and also determined the corresponding spin-orbit torque components.
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Submitted 11 October, 2015; v1 submitted 11 May, 2015;
originally announced May 2015.
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Thermoelectric and thermospin transport in a ballistic junction of graphene
Authors:
M. Inglot,
V. K. Dugaev,
J. Barnaś
Abstract:
We consider theoretically a wide graphene ribbon, that on both ends is attached to electronic reservoirs which generally have different temperatures. The graphene ribbon is assumed to be deposited on a substrate, that leads to a spin-orbit coupling of Rashba type. We calculate the thermally induced charge current in the ballistic transport regime as well as the thermoelectric voltage (Seebeck effe…
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We consider theoretically a wide graphene ribbon, that on both ends is attached to electronic reservoirs which generally have different temperatures. The graphene ribbon is assumed to be deposited on a substrate, that leads to a spin-orbit coupling of Rashba type. We calculate the thermally induced charge current in the ballistic transport regime as well as the thermoelectric voltage (Seebeck effect). Apart from this, we also consider thermally induced spin current and spin polarization of the graphene ribbon. The spin currents are shown to have generally two components; one parallel to the temperature gradient and the other one perpendicular to this gradient. The latter corresponds to the spin current due to the spin Nernst effect. Additionally, we also consider the heat current between the reservoirs due to transfer of electrons.
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Submitted 16 April, 2015;
originally announced April 2015.
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Enhanced photogalvanic effect in graphene due to Rashba spin-orbit coupling
Authors:
M. Inglot,
V. K. Dugaev,
E. Ya. Sherman,
J. Barnaś
Abstract:
We analyze theoretically optical generation of a spin-polarized charge current (photogalvanic effect) and spin polarization in graphene with Rashba spin-orbit coupling. An external magnetic field is applied in the graphene plane, which plays a crucial role in the mechanism of current generation. We predict a highly efficient resonant-like photogalvanic effect in a narrow frequency range which is d…
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We analyze theoretically optical generation of a spin-polarized charge current (photogalvanic effect) and spin polarization in graphene with Rashba spin-orbit coupling. An external magnetic field is applied in the graphene plane, which plays a crucial role in the mechanism of current generation. We predict a highly efficient resonant-like photogalvanic effect in a narrow frequency range which is determined by the magnetic field. A relatively less efficient photogalvanic effect appears in a broader frequency range, determined by the electron concentration and spin-orbit coupling strength.
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Submitted 19 February, 2015;
originally announced February 2015.
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Superpoissonian shot noise in organic magnetic tunnel junctions
Authors:
Juan Pedro Cascales,
Jhen-Yong Hong,
Isidoro Martinez,
Minn-Tsong Lin,
Tomasz Szczepanski,
Vitalii K. Dugaev,
Jozef Barnas,
Farkad G. Aliev
Abstract:
Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here we investigate conductance and shot noise in magnetic tunnel junctions with PTCDA barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10 and 40\%…
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Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here we investigate conductance and shot noise in magnetic tunnel junctions with PTCDA barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10 and 40\%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5-2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.
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Submitted 22 January, 2015;
originally announced January 2015.
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Charge and spin transport in a metal-semiconductor heterostructure with double Schottky barriers
Authors:
S. Wolski,
C. Jasiukiewicz,
V. K. Dugaev,
J. Barnas,
T. Slobodskyy,
W. Hansen
Abstract:
Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe,…
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Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor.
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Submitted 16 December, 2014;
originally announced December 2014.
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Spin-dependent thermoelectric properties of a Kondo-correlated quantum dot with Rashba spin-orbit coupling
Authors:
Łukasz Karwacki,
Piotr Trocha,
Józef Barnaś
Abstract:
Thermoelectric transport phenomena in a single-level quantum dot coupled to ferromagnetic leads are considered theoretically in the Kondo regime. The dot is described by the Anderson model with Rashba type spin-orbit interaction. The finite-U mean field slave boson technique is used to describe the transport characteristics, like heat conductance, thermopower, thermoelectric efficiency (figure of…
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Thermoelectric transport phenomena in a single-level quantum dot coupled to ferromagnetic leads are considered theoretically in the Kondo regime. The dot is described by the Anderson model with Rashba type spin-orbit interaction. The finite-U mean field slave boson technique is used to describe the transport characteristics, like heat conductance, thermopower, thermoelectric efficiency (figure of merit). The role of quantum interference effects in thermoelectric parameters is also analyzed.
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Submitted 9 December, 2014;
originally announced December 2014.