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Unraveling electronic structure of GeS through ARPES and its correlation with anisotropic optical and transport behavior
Authors:
Rahul Paramanik,
Tanima Kundu,
Soumik Das,
Alexey Barinov,
Bikash Das,
Sujan Maity,
Mainak Palit,
Sanjoy Kr Mahatha,
Subhadeep Datta
Abstract:
Two-dimensional (2D) van der Waals (vdW) materials with lower symmetry (triclinic, monoclinic or orthorhombic) exhibit intrinsic anisotropic in-plane structure desirable for future optoelectronic surface operating devices. Herein, we report one such material, 2D $p$-type semiconductor germanium sulfide (GeS), a group IV monochalcogenide with puckered orthorhombic morphology, in which in-plane opti…
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Two-dimensional (2D) van der Waals (vdW) materials with lower symmetry (triclinic, monoclinic or orthorhombic) exhibit intrinsic anisotropic in-plane structure desirable for future optoelectronic surface operating devices. Herein, we report one such material, 2D $p$-type semiconductor germanium sulfide (GeS), a group IV monochalcogenide with puckered orthorhombic morphology, in which in-plane optical and transport properties can be correlated with its electronic structure. We systematically investigate the electronic band structure of the bulk GeS with micro-focused angle-resolved photoemission spectroscopy ($μ$-ARPES) and correspond the charge transport properties using the field-effect transistor (FET) device architecture, and optical anisotropy $via$ angle-resolved polarization dependent Raman spectroscopy (ARPRS) on a micron-sized rectangle-shaped exfoliated bulk flake. The experimental valence band dispersion along the two high symmetry directions indicate highly anisotropic in-plane behavior of the charge carrier that agrees well with the density functional theory (DFT) calculations. In addition, we demonstrate the variation of the in-plane hole mobility (ratio $\sim$ 3.4) from the electrical conductivity with gate-sweep in a GeS-on-SiO$_2$ FET. Moreover, we use the angle-resolved fluctuation of the Raman intensity of the characteristic phonon modes to precisely determine the armchair and zigzag edges of the particular flake. The unique structural motif of GeS with correlated electronic and optical properties are of great interest both for the physical understanding of the all-optical switch and their applications in memory devices.
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Submitted 23 May, 2024;
originally announced May 2024.
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Revealing the conduction band and pseudovector potential in 2D moiré semiconductors
Authors:
Abigail J. Graham,
Heonjoon Park,
Paul V. Nguyen,
James Nunn,
Viktor Kandyba,
Mattia Cattelan,
Alessio Giampietri,
Alexei Barinov,
Kenji Watanabe,
Takashi Taniguchi,
Anton Andreev,
Mark Rudner,
Xiaodong Xu,
Neil R. Wilson,
David H. Cobden
Abstract:
Stacking monolayer semiconductors results in moiré patterns that host many correlated and topological electronic phenomena, but measurements of the basic electronic structure underpinning these phenomena are scarce. Here, we investigate the properties of the conduction band in moiré heterobilayers using submicron angle-resolved photoemission spectroscopy with electrostatic gating, focusing on the…
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Stacking monolayer semiconductors results in moiré patterns that host many correlated and topological electronic phenomena, but measurements of the basic electronic structure underpinning these phenomena are scarce. Here, we investigate the properties of the conduction band in moiré heterobilayers using submicron angle-resolved photoemission spectroscopy with electrostatic gating, focusing on the example of WS2/WSe2. We find that at all twist angles the conduction band edge is the K-point valley of the WS2, with a band gap of 1.58 +- 0.03 eV. By resolving the conduction band dispersion, we observe an unexpectedly small effective mass of 0.15 +- 0.02 m_e. In addition, we observe replicas of the conduction band displaced by reciprocal lattice vectors of the moiré superlattice. We present arguments and evidence that the replicas are due to modification of the conduction band states by the moiré potential rather than to final-state diffraction. Interestingly, the replicas display an intensity pattern with reduced, 3-fold symmetry, which we show implicates the pseudo vector potential associated with in-plane strain in moiré band formation.
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Submitted 19 September, 2023;
originally announced September 2023.
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On the floating of the topological surface state on top of a thick lead layer: The case of the Pb/Bi2Se3 interface
Authors:
Oreste De Luca,
Igor A. Shvets,
Sergey V. Eremeev,
Ziya S. Aliev,
Marek Kopciuszynski,
Alexey Barinov,
Fabio Ronci,
Stefano Colonna,
Evgueni V. Chulkov,
Raffaele G. Agostino,
Marco Papagno,
Roberto Flammini
Abstract:
The puzzling question about the floating of the topological surface state on top of a thick Pb layer, has now possibly been answered. A study of the interface made by Pb on Bi2Se3 for different temperature and adsorbate coverage condition, allowed us to demonstrate that the evidence reported in the literature can be related to the surface diffusion phenomenon exhibited by the Pb atoms, which leave…
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The puzzling question about the floating of the topological surface state on top of a thick Pb layer, has now possibly been answered. A study of the interface made by Pb on Bi2Se3 for different temperature and adsorbate coverage condition, allowed us to demonstrate that the evidence reported in the literature can be related to the surface diffusion phenomenon exhibited by the Pb atoms, which leaves the substrate partially uncovered. Comprehensive density functional theory calculations show that despite the specific arrangement of the atoms at the interface, the topological surface state cannot float on top of the adlayer but rather tends to move inward within the substrate.
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Submitted 27 November, 2023; v1 submitted 25 August, 2023;
originally announced August 2023.
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Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier do**
Authors:
Ekaterina Khestanova,
Tatyana Ivanova,
Roland Gillen,
Alessandro D Elia,
Oliver Nicholas Gallego Lacey,
Lena Wysocki,
Alexander Gruneis,
Vasily Kravtsov,
Wlodek Strupinski,
Janina Maultzsch,
Viktor Kandyba,
Mattia Cattelan,
Alexei Barinov,
Jose Avila,
Pavel Dudin,
Boris V. Senkovskiy
Abstract:
Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron do** of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the…
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Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron do** of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the optical and electronic properties of a MoS2/WSe2 heterostructure as a function of chemical do** by Cs atoms performed under ultra-high vacuum conditions. By PL measurements we identify two interlayer excitons and assign them to the momentum-indirect Q-Gamma and K-Gamma transitions. The energies of these excitons are in a very good agreement with ab initio calculations. We find that the Q-Gamma interlayer exciton is robust to the electron do** and is present at room temperature even at a high charge carrier concentration. Submicrometer angle-resolved photoemission spectroscopy (micro-ARPES) reveals charge transfer from deposited Cs adatoms to both the upper MoS2 and the lower WSe2 monolayer without changing the band alignment. This leads to a small (10 meV) energy shift of interlayer excitons. Robustness of the momentum-indirect interlayer exciton to charge do** opens up an opportunity of using TMD heterostructures in light-emitting devices that can work at room temperature at high densities of charge carriers.
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Submitted 5 April, 2023;
originally announced April 2023.
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Tunable Electron Transport in Defect-Engineered PdSe$_\mathrm{2}$
Authors:
Tanima Kundu,
Barnik Pal,
Bikash Das,
Rahul Paramanik,
Sujan Maity,
Anudeepa Ghosh,
Mainak Palit,
Marek Kopciuszynski,
Alexei Barinov,
Sanjoy Kr Mahatha,
Subhadeep Datta
Abstract:
Tuning the ambipolar behavior in charge carrier transport via defect-engineering is crucial for achieving high mobility transistors for nonlinear logic circuits. Here, we present the electric-field tunable electron and hole transport in a microchannel device consisting of highly air-stable van der Waals (vdW) noble metal dichalcogenide (NMDC), PdSe$_\mathrm{2}$, as an active layer. Pristine bulk P…
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Tuning the ambipolar behavior in charge carrier transport via defect-engineering is crucial for achieving high mobility transistors for nonlinear logic circuits. Here, we present the electric-field tunable electron and hole transport in a microchannel device consisting of highly air-stable van der Waals (vdW) noble metal dichalcogenide (NMDC), PdSe$_\mathrm{2}$, as an active layer. Pristine bulk PdSe$_\mathrm{2}$ constitutes Se surface vacancy defects created during the growth or exfoliation process and offers an ambipolar transfer characteristics with a slight electron dominance recorded in field-effect transistor (FET) characteristics showing an ON/OFF ratio < 10 and electron mobility ~ 21 cm$^2$/V.s. However, transfer characteristics of PdSe$_\mathrm{2}$ can be tuned to a hole-dominated transport while using hydrochloric acid (HCl) as a $p$-type dopant. On the other hand, the chelating agent EDTA, being a strong electron donor, enhances the electron-dominance in PdSe$_\mathrm{2}$ channel. In addition, $p$-type behavior with a 100 times higher ON/OFF ratio is obtained while cooling the sample down to 10 K. Low-temperature angle-resolved photoemission spectroscopy resembles the $p$-type band structure of PdSe$_\mathrm{2}$ single crystal. Also, first principle density functional theory calculations justify the tunability observed in PdSe$_\mathrm{2}$ as a result of defect-engineering. Such a defect-sensitive ambipolar vdW architecture may open up new possibilities towards future CMOS (Complementary Metal-Oxide-Semiconductor) device fabrications and high performance integrated circuits.
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Submitted 3 July, 2023; v1 submitted 13 February, 2023;
originally announced February 2023.
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A robust weak topological insulator in a bismuth halide Bi4Br2I2
Authors:
Ryo Noguchi,
Masaru Kobayashi,
Kaishu Kawaguchi,
Chun Lin,
Hiroaki Tanaka,
Kenta Kuroda,
Ayumi Harasawa,
Viktor Kandyba,
Mattia Cattelan,
Alexei Barinov,
Makoto Hashimoto,
Donghui Lu,
Takao Sasagawa,
Takeshi Kondo
Abstract:
We apply a topological material design concept for selecting a bulk topology of 3D crystals by different van-der-Waals stacking of 2D topological insulator layers, and find a bismuth halide Bi4Br2I2 to be an ideal weak topological insulator (WTI) with the largest band gap (~230 meV) among all the WTI candidates, by means of angle-resolved photoemission spectroscopy (ARPES), density functional theo…
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We apply a topological material design concept for selecting a bulk topology of 3D crystals by different van-der-Waals stacking of 2D topological insulator layers, and find a bismuth halide Bi4Br2I2 to be an ideal weak topological insulator (WTI) with the largest band gap (~230 meV) among all the WTI candidates, by means of angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT) calculations, and resistivity measurements. Our results vastly expand future opportunities for fundamental research and device applications with a robust WTI.
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Submitted 17 January, 2023;
originally announced January 2023.
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Band alignment and interlayer hybridisation in transition metal dichalcogenide/hexagonal boron nitride heterostructures
Authors:
S. J. Magorrian,
A. J. Graham,
N. Yeung,
F. Ferreira,
P. V. Nguyen,
A. Barinov,
V. I. Fal'ko,
N. R. Wilson,
N. D. M. Hine
Abstract:
In van der Waals heterostructures, the relative alignment of bands between layers, and the resulting band hybridisation, are key factors in determining a range of electronic properties. This work examines these effects for heterostructures of transition metal dichalcogenides (TMDs) and hexagonal boron nitride (hBN), an ubiquitous combination given the role of hBN as an encapsulating material. By c…
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In van der Waals heterostructures, the relative alignment of bands between layers, and the resulting band hybridisation, are key factors in determining a range of electronic properties. This work examines these effects for heterostructures of transition metal dichalcogenides (TMDs) and hexagonal boron nitride (hBN), an ubiquitous combination given the role of hBN as an encapsulating material. By comparing results of density functional calculations with experimental angle-resolved photoemission spectroscopy (ARPES) results, we explore the hybridisation between the valence states of the TMD and hBN layers, and show that it introduces avoided crossings between the TMD and hBN bands, with umklapp processes opening `ghost' avoided crossings in individual bands. Comparison between DFT and ARPES spectra for the MoSe$_2$/hBN heterostructure shows that the valence bands of MoSe$_2$ and hBN are significantly further separated in energy in experiment as compared to DFT. We then show that a novel scissor operator can be applied to the hBN valence states in the DFT calculations, to correct the band alignment and enable quantitative comparison to ARPES, explaining avoided crossings and other features of band visibility in the ARPES spectra.
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Submitted 5 October, 2022; v1 submitted 19 July, 2022;
originally announced July 2022.
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Observation of Γ-valley moiré bands and emergent hexagonal lattice in twisted transition metal dichalcogenides
Authors:
Ding Pei,
Binbin Wang,
Zishu Zhou,
Zhihai He,
Liheng An,
Shanmei He,
Cheng Chen,
Yiwei Li,
Liyang Wei,
Aiji Liang,
Jose Avila,
Pavel Dudin,
Viktor Kandyba,
Alessio Giampietri,
Mattia Cattelan,
Alexei Barinov,
Zhongkai Liu,
Jianpeng Liu,
Hongming Weng,
Ning Wang,
Jiamin Xue,
Yulin Chen
Abstract:
Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moiré bands with specific charge distributions in moiré superlattices. Here, combining angle-resolved photoemission spectroscopy with sub-micron spatial resolution (μ-ARPES) and scanning tunneling microscopy (STM), we performed a systemat…
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Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moiré bands with specific charge distributions in moiré superlattices. Here, combining angle-resolved photoemission spectroscopy with sub-micron spatial resolution (μ-ARPES) and scanning tunneling microscopy (STM), we performed a systematic investigation on the electronic structure of 5.1° twisted bilayer WSe2 that hosts correlated insulating and zero-resistance states. Interestingly, contrary to one's expectation, moiré bands were observed only at Γ-valley but not K-valley in μ-ARPES measurements; and correspondingly, our STM measurements clearly identified the real-space honeycomb- and Kagome-shaped charge distributions at the moiré length scale associated with the Γ-valley moiré bands. These results not only reveal the unsual valley dependent moiré-modified electronic structure in twisted transition metal dichalcogenides, but also highlight the Γ-valley moiré bands as a promising platform for exploring strongly correlated physics in emergent honeycomb and Kagome lattices at different energy scales.
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Submitted 27 May, 2022;
originally announced May 2022.
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Large anomalous Hall effect induced by weak ferromagnetism in the noncentrosymmetric antiferromagnet $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$
Authors:
Hiroaki Tanaka,
Shota Okazaki,
Kenta Kuroda,
Ryo Noguchi,
Yosuke Arai,
Susumu Minami,
Shinichiro Ideta,
Kiyohisa Tanaka,
Donghui Lu,
Makoto Hashimoto,
Viktor Kandyba,
Mattia Cattelan,
Alexei Barinov,
Takayuki Muro,
Takao Sasagawa,
Takeshi Kondo
Abstract:
We study the mechanism of the exceptionally large anomalous Hall effect (AHE) in the noncentrosymmetric antiferromagnet $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$ by angle-resolved photoemission spectroscopy (ARPES) and magnetotransport measurements. From ARPES measurements of $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$ and its family compounds ($\mathrm{Fe}\mathrm{Nb}_3\mathrm{S}_6$ and…
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We study the mechanism of the exceptionally large anomalous Hall effect (AHE) in the noncentrosymmetric antiferromagnet $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$ by angle-resolved photoemission spectroscopy (ARPES) and magnetotransport measurements. From ARPES measurements of $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$ and its family compounds ($\mathrm{Fe}\mathrm{Nb}_3\mathrm{S}_6$ and $\mathrm{Ni}\mathrm{Nb}_3\mathrm{S}_6$), we find a band dispersion unique to the Co intercalation existing near the Fermi level. We further demonstrate that a slight deficiency of sulfur in $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$ eliminates the ferromagnetism and the AHE simultaneously while hardly changing the band structure, indicating that the weak ferromagnetism is responsible for the emergence of the large AHE. Based on our results, we propose Weyl points near the Fermi level to cause the large AHE.
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Submitted 18 February, 2022;
originally announced February 2022.
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Domain dependent Fermi arcs observed in a striped phase dichalcogenide
Authors:
T. Mizokawa,
A. Barinov,
V. Kandyba,
A. Giampietri,
R. Matsumoto,
Y. Okamoto,
K. Takubo,
K. Miyamoto,
T. Okuda,
S. Pyon,
H. Ishii,
K. Kudo,
M. Nohara,
N. L. Saini
Abstract:
Angle-resolved photoemission spectromicroscopy on IrTe2 reveals evolution of mesoscopic striped domains across its first order phase transition at about 280 K. The striped texture of the domains is characterized by a herringbone arrangement of the electronic anisotropy axes. Under further cooling down to 47 K, the striped domains evolve into trijunction domains with the electronic anisotropy in th…
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Angle-resolved photoemission spectromicroscopy on IrTe2 reveals evolution of mesoscopic striped domains across its first order phase transition at about 280 K. The striped texture of the domains is characterized by a herringbone arrangement of the electronic anisotropy axes. Under further cooling down to 47 K, the striped domains evolve into trijunction domains with the electronic anisotropy in three directions. Each domain harbors quasi one-dimensional surface bands forming Fermi arcs with peculiar spin polarization. The Fermi arc corresponds to an edge state of the two-dimensional bulk electronic states truncated at the surface, indicating an interesting interplay between the symmetry breaking and the surface electronic states.
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Submitted 11 December, 2021;
originally announced December 2021.
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Observation of Topological Superconductivity in a Stoichiometric Transition Metal Dichalcogenide 2M-WS2
Authors:
Y. W. Li,
H. J. Zheng,
Y. Q. Fang,
D. Q. Zhang,
Y. J. Chen,
C. Chen,
A. J. Liang,
W. J. Shi,
D. Pei,
L. X. Xu,
S. Liu,
J. Pan,
D. H. Lu,
M. Hashimoto,
A. Barinov,
S. W. Jung,
C. Cacho,
M. X. Wang,
Y. He,
L. Fu,
H. J. Zhang,
F. Q. Huang,
L. X. Yang,
Z. K. Liu,
Y. L. Chen
Abstract:
Topological superconductors (TSCs) are unconventional superconductors with bulk superconducting gap and in-gap Majorana states on the boundary that may be used as topological qubits for quantum computation. Despite their importance in both fundamental research and applications, natural TSCs are very rare. Here, combining state of the art synchrotron and laser-based angle-resolved photoemission spe…
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Topological superconductors (TSCs) are unconventional superconductors with bulk superconducting gap and in-gap Majorana states on the boundary that may be used as topological qubits for quantum computation. Despite their importance in both fundamental research and applications, natural TSCs are very rare. Here, combining state of the art synchrotron and laser-based angle-resolved photoemission spectroscopy, we investigated a stoichiometric transition metal dichalcogenide (TMD), 2M-WS2 with a superconducting transition temperature of 8.8 K (the highest among all TMDs in the natural form up to date) and observed distinctive topological surface states (TSSs). Furthermore, in the superconducting state, we found that the TSSs acquired a nodeless superconducting gap with similar magnitude as that of the bulk states. These discoveries not only evidence 2M-WS2 as an intrinsic TSC without the need of sensitive composition tuning or sophisticated heterostructures fabrication, but also provide an ideal platform for device applications thanks to its van der Waals layered structure.
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Submitted 14 April, 2021;
originally announced April 2021.
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Observation and control of the weak topological insulator state in ZrTe5
Authors:
Peng Zhang,
Ryo Noguchi,
Kenta Kuroda,
Chun Lin,
Kaishu Kawaguchi,
Koichiro Yaji,
Ayumi Harasawa,
Mikk Lippmaa,
Simin Nie,
Hongming Weng,
V. Kandyba,
A. Giampietri,
A. Barinov,
Qiang Li,
G. D. Gu,
Shik Shin,
Takeshi Kondo
Abstract:
A quantum spin Hall insulator hosts topological states at the one-dimensional edge, along which backscattering by nonmagnetic impurities is strictly prohibited and dissipationless current flows. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces of crystals. The enhanced confinement could provide a route for dissipationless…
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A quantum spin Hall insulator hosts topological states at the one-dimensional edge, along which backscattering by nonmagnetic impurities is strictly prohibited and dissipationless current flows. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces of crystals. The enhanced confinement could provide a route for dissipationless current and better advantages for applications relative to the widely studied strong topological insulators. However, the topological side surface is usually not cleavable and is thus hard to observe by angle-resolved photoemission spectroscopy (ARPES), which has hindered the revealing of the electronic properties of WTIs. Here, we visualize the topological surface states of the WTI candidate ZrTe5 for the first time by spin and angle-resolved photoemission spectroscopy: a quasi-1D band with spin-momentum locking was revealed on the side surface. We further demonstrate that the bulk band gap in ZrTe5 is controlled by strain to the crystal, realizing a more stabilized WTI state or an ideal Dirac semimetal state depending on the direction of the external strain. The highly directional spin-current and the tunable band gap we found in ZrTe5 will provide an excellent platform for applications.
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Submitted 9 December, 2020;
originally announced December 2020.
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Moiré superlattice effects and band structure evolution in near-30-degree twisted bilayer graphene
Authors:
Matthew J. Hamer,
Alessio Giampietri,
Viktor Kandyba,
Francesca Genuzio,
Tevfik O. Mentes,
Andrea Locatelli,
Roman V. Gorbachev,
Alexei Barinov,
Marcin Mucha-Kruczynski
Abstract:
In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moiré periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Bri…
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In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moiré periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Brillouin zone, including the vicinity of the saddle point at $M$ and across 3 eV from the Dirac points. In this energy range, we resolve several moiré minibands and detect signatures of secondary Dirac points in the reconstructed dispersions. For twists $θ>21.8^{\circ}$, the low-energy minigaps are not due to cone anti-crossing as is the case at smaller twist angles but rather due to moiré scattering of electrons in one graphene layer on the potential of the other which generates intervalley coupling. Our work demonstrates robustness of mechanisms which enable engineering of electronic dispersions of stacks of two-dimensional crystals by tuning the interface twist angles. It also shows that large-angle tBLG hosts electronic minigaps and van Hove singularities of different origin which, given recent progress in extreme do** of graphene, could be explored experimentally.
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Submitted 27 January, 2022; v1 submitted 19 October, 2020;
originally announced October 2020.
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Atomic and electronic structure of two-dimensional Mo(1-x)WxS2 alloys
Authors:
Xue Xia,
Siow Mean Loh,
Jacob Viner,
Natalie C. Teutsch,
Abigail J. Graham,
Viktor Kandyba,
Alexei Barinov,
Ana M. Sanchez,
David C. Smith,
Nicholas D. M. Hine,
Neil R. Wilson
Abstract:
Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applications. Due to their similar lattice parameters, the two-dimensional semiconducting transition metal dichalcogenides of the MoWSeS group (MX2 where M= Mo or W and X=S or Se) can be grown as high-quality materials with low defect concentrations. Here we investigate the atomic and electronic structure…
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Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applications. Due to their similar lattice parameters, the two-dimensional semiconducting transition metal dichalcogenides of the MoWSeS group (MX2 where M= Mo or W and X=S or Se) can be grown as high-quality materials with low defect concentrations. Here we investigate the atomic and electronic structure of Mo(1-x)WxS2 alloys using a combination of high-resolution experimental techniques and simulations. Analysis of the Mo and W atomic positions in these alloys, grown by chemical vapour transport, shows that they are randomly distributed, consistent with Monte Carlo simulations that use interaction energies determined from first-principles calculations. Electronic structure parameters are directly determined from angle resolved photoemission spectroscopy measurements. These show that the spin-orbit splitting at the valence band edge increases linearly with W content from MoS2 to WS2, in agreement with linear-scaling density functional theory (LS-DFT) predictions. The spin-orbit splitting at the conduction band edge is predicted to reduce to zero at intermediate compositions. Despite this, polarisation-resolved photoluminescence spectra on monolayer Mo0.5W0.5S2 show significant circular dichroism, indicating that spin-valley locking is retained. These results demonstrate that alloying is an important tool for controlling the electronic structure of MX2 for spintronic and valleytronic applications.
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Submitted 10 September, 2020;
originally announced September 2020.
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Observation of topological electronic structure in quasi-1D superconductor TaSe3
Authors:
Cheng Chen,
Aiji Liang,
Shuai Liu,
Simin Nie,
Junwei Huang,
Meixiao Wang,
Yiwei Li,
Ding Pei,
Haifeng Yang,
Huijun Zheng,
Yong Zhang,
Donghui Lu,
Makoto Hashimoto,
Alexei Barinov,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Xufeng Kou,
Lexian Yang,
Yanfeng Guo,
Zhijun Wang,
Hongtao Yuan,
Zhongkai Liu,
Yulin Chen
Abstract:
Topological superconductors (TSCs), with the capability to host Majorana bound states that can lead to non-Abelian statistics and application in quantum computation, have been one of the most intensively studied topics in condensed matter physics recently. Up to date, only a few compounds have been proposed as candidates of intrinsic TSCs, such as doped topological insulator CuxBi2Se3 and iron-bas…
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Topological superconductors (TSCs), with the capability to host Majorana bound states that can lead to non-Abelian statistics and application in quantum computation, have been one of the most intensively studied topics in condensed matter physics recently. Up to date, only a few compounds have been proposed as candidates of intrinsic TSCs, such as doped topological insulator CuxBi2Se3 and iron-based superconductor FeTe0.55Se0.45. Here, by carrying out synchrotron and laser based angle-resolved photoemission spectroscopy (ARPES), we systematically investigated the electronic structure of a quasi-1D superconductor TaSe3, and identified the nontrivial topological surface states. In addition, our scanning tunneling microscopy (STM) study revealed a clean cleaved surface with a persistent superconducting gap, proving it suitable for further investigation of potential Majorana modes. These results prove TaSe3 as a stoichiometric TSC candidate that is stable and exfoliable, therefore a great platform for the study of rich novel phenomena and application potentials.
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Submitted 7 September, 2020; v1 submitted 4 September, 2020;
originally announced September 2020.
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Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures
Authors:
Abigail J. Graham,
Johanna Zultak,
Matthew J. Hamer,
Viktor Zolyomi,
Samuel Magorrian,
Alexei Barinov,
Viktor Kandyba,
Alessio Giampietri,
Andrea Locatelli,
Francesca Genuzio,
Natalie C. Teutsch,
Temok Salazar,
Nicholas D. M. Hine,
Vladimir I. Fal'ko,
Roman V. Gorbachev,
Neil R. Wilson
Abstract:
In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattic…
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In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattice in the neighbouring layer. Using angle-resolved photoemission spectroscopy to study a graphene on InSe heterostructure, we present evidence that interlayer umklapp processes can cause hybridization between bands from neighbouring layers in regions of the Brillouin zone where bands from only one layer are expected, despite no evidence for moir/'e-induced replica bands. This phenomenon manifests itself as 'ghost' anti-crossings in the InSe electronic dispersion. Applied to a range of suitable 2DM pairs, this phenomenon of interlayer umklapp hybridization can be used to create strong mixing of their electronic states, giving a new tool for twist-controlled band structure engineering.
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Submitted 8 January, 2021; v1 submitted 27 August, 2020;
originally announced August 2020.
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Determination of interatomic coupling between two-dimensional crystals using angle-resolved photoemission spectroscopy
Authors:
J. J. P. Thompson,
D. Pei,
H. Peng,
H. Wang,
N. Channa,
H. L. Peng,
A. Barinov,
N. B. M. Schröter,
Y. Chen,
M. Mucha-Kruczyński
Abstract:
Lack of directional bonding between two-dimensional crystals like graphene or monolayer transition metal dichalcogenides provides unusual freedom in selection of components for vertical van der Waals heterostructures. However, even for identical layers, their stacking, in particular the relative angle between their crystallographic directions, modifies properties of the structure. We demonstrate t…
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Lack of directional bonding between two-dimensional crystals like graphene or monolayer transition metal dichalcogenides provides unusual freedom in selection of components for vertical van der Waals heterostructures. However, even for identical layers, their stacking, in particular the relative angle between their crystallographic directions, modifies properties of the structure. We demonstrate that the interatomic coupling between two two-dimensional crystals can be determined from angle-resolved photoemission spectra of a trilayer structure with one aligned and one twisted interface. Each of the interfaces provides complementary information and together they enable self-consistent determination of the coupling. We parametrize interatomic coupling for carbon atoms by studying twisted trilayer graphene and show that the result can be applied to structures with different twists and number of layers. Our approach demonstrates how to extract fundamental information about interlayer coupling in a stack of two-dimensional crystals and can be applied to many other van der Waals interfaces.
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Submitted 17 July, 2020;
originally announced July 2020.
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Direct evidence for flat bands in twisted bilayer graphene from nano-ARPES
Authors:
Simone Lisi,
Xiaobo Lu,
Tjerk Benschop,
Tobias A. de Jong,
Petr Stepanov,
Jose R. Duran,
Florian Margot,
Irène Cucchi,
Edoardo Cappelli,
Andrew Hunter,
Anna Tamai,
Viktor Kandyba,
Alessio Giampietri,
Alexei Barinov,
Johannes Jobst,
Vincent Stalman,
Maarten Leeuwenhoek,
Kenji Watanabe,
Takashi Taniguchi,
Louk Rademaker,
Sense Jan van der Molen,
Milan Allan,
Dmitri K. Efetov,
Felix Baumberger
Abstract:
Transport experiments in twisted bilayer graphene revealed multiple superconducting domes separated by correlated insulating states. These properties are generally associated with strongly correlated states in a flat mini-band of the hexagonal moiré superlattice as it was predicted by band structure calculations. Evidence for such a flat band comes from local tunneling spectroscopy and electronic…
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Transport experiments in twisted bilayer graphene revealed multiple superconducting domes separated by correlated insulating states. These properties are generally associated with strongly correlated states in a flat mini-band of the hexagonal moiré superlattice as it was predicted by band structure calculations. Evidence for such a flat band comes from local tunneling spectroscopy and electronic compressibility measurements, reporting two or more sharp peaks in the density of states that may be associated with closely spaced van Hove singularities. Direct momentum resolved measurements proved difficult though. Here, we combine different imaging techniques and angle resolved photoemission with simultaneous real and momentum space resolution (nano-ARPES) to directly map the band dispersion in twisted bilayer graphene devices near charge neutrality. Our experiments reveal large areas with homogeneous twist angle that support a flat band with spectral weight that is highly localized in momentum space. The flat band is separated from the dispersive Dirac bands which show multiple moiré hybridization gaps. These data establish the salient features of the twisted bilayer graphene band structure.
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Submitted 6 February, 2020;
originally announced February 2020.
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Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator
Authors:
Ryo Noguchi,
Masaru Kobayashi,
Zhanzhi Jiang,
Kenta Kuroda,
Takanari Takahashi,
Zifan Xu,
Daehun Lee,
Motoaki Hirayama,
Masayuki Ochi,
Tetsuroh Shirasawa,
Peng Zhang,
Chun Lin,
Cédric Bareille,
Shunsuke Sakuragi,
Hiroaki Tanaka,
So Kunisada,
Kifu Kurokawa,
Koichiro Yaji,
Ayumi Harasawa,
Viktor Kandyba,
Alessio Giampietri,
Alexei Barinov,
Timur K. Kim,
Cephise Cacho,
Makoto Hashimoto
, et al. (6 additional authors not shown)
Abstract:
The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingl…
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The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications.
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Submitted 10 February, 2021; v1 submitted 4 February, 2020;
originally announced February 2020.
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Atomic reconstruction in twisted bilayers of transition metal dichalcogenides
Authors:
Astrid Weston,
Yichao Zou,
Vladimir Enaldiev,
Alex Summerfield,
Nicholas Clark,
Viktor Z'olyomi,
Abigail Graham,
Celal Yelgel,
Samuel Magorrian,
Mingwei Zhou,
Johanna Zultak,
David Hopkinson,
Alexei Barinov,
Thomas Bointon,
Andrey Kretinin,
Neil R. Wilson,
Peter H. Beton,
Vladimir I. Fal'ko,
Sarah J. Haigh,
Roman Gorbachev
Abstract:
Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic resolution transmission electron microscopy and multiscale modeling to show that the lattice of MoS$_2$ and WS$_2$ bil…
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Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic resolution transmission electron microscopy and multiscale modeling to show that the lattice of MoS$_2$ and WS$_2$ bilayers twisted to a small angle, $θ<3^{\circ}$, reconstructs into energetically favorable stacking domains separated by a network of stacking faults. For crystal alignments close to 3R stacking, a tessellated pattern of mirror reflected triangular 3R domains emerges, separated by a network of partial dislocations which persist to the smallest twist angles. Scanning tunneling measurements show that the electronic properties of those 3R domains appear qualitatively different from 2H TMDs, featuring layer-polarized conduction band states caused by lack of both inversion and mirror symmetry. In contrast, for alignments close to 2H stacking, stable 2H domains dominate, with nuclei of an earlier unnoticed metastable phase limited to $\sim$ 5nm in size. This appears as a kagome-like pattern at $θ\sim 1^{\circ}$, transitioning at $θ\rightarrow 0$ to a hexagonal array of screw dislocations separating large-area 2H domains.
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Submitted 7 July, 2020; v1 submitted 28 November, 2019;
originally announced November 2019.
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Tuning Dirac nodes with correlated d-electrons in BaCo_{1-x}Ni_{x}S_{2}
Authors:
N. Nilforoushan,
M. Casula,
A. Amaricci,
M. Caputo,
J. Caillaux,
L. Khalil,
E. Papalazarou,
P. Simon,
L. Perfetti,
I. Vobornik,
P. K. Das,
J. Fujii,
A. Barinov,
D. Santos-Cottin,
Y. Klein,
M. Fabrizio,
A. Gauzzi,
M. Marsi
Abstract:
Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step towards the realization of novel concepts of electronic devices and quantum computation. By means of ARPES experiments and ab initio simulations, here…
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Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step towards the realization of novel concepts of electronic devices and quantum computation. By means of ARPES experiments and ab initio simulations, here we show that Dirac states can be effectively tuned by do** a transition metal sulfide, BaNiS2, through Co/Ni substitution. The symmetry and chemical characteristics of this material, combined with the modification of the charge transfer gap of BaCo_{1-x}Ni_{x}S_{2} across its phase diagram, lead to the formation of Dirac lines whose position in k-space can be displaced along the Gamma M symmetry direction, and their form reshaped. Not only does the do** x tailor the location and shape of the Dirac bands, but it also controls the metal-insulator transition in the same compound, making BaCo_{1-x}Ni_{x}S_{2} a model system to functionalize Dirac materials by varying the strength of electron correlations.
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Submitted 27 November, 2021; v1 submitted 29 May, 2019;
originally announced May 2019.
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Visualizing electrostatic gating effects in two-dimensional heterostructures
Authors:
Paul V. Nguyen,
Natalie C. Teutsch,
Nathan P. Wilson,
Joshua Kahn,
Xue Xia,
Viktor Kandyba,
Alexei Barinov,
Gabriel Constantinescu,
Nicholas D. M. Hine,
Xiaodong Xu,
David H. Cobden,
Neil R. Wilson
Abstract:
The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body sp…
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The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body spectral reconstructions. Here we show that submicron angle-resolved photoemission (micro-ARPES) applied to two-dimensional (2D) van der Waals heterostructures affords this ability. In graphene devices, we observe a shift of the chemical potential by 0.6 eV across the Dirac point as a gate voltage is applied. In several 2D semiconductors we see the conduction band edge appear as electrons accumulate, establishing its energy and momentum, and observe significant band-gap renormalization at low densities. We also show that micro-ARPES and optical spectroscopy can be applied to a single device, allowing rigorous study of the relationship between gate-controlled electronic and excitonic properties.
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Submitted 15 April, 2019;
originally announced April 2019.
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Ti2NiCu Based Composite Nanotweezers with a Shape Memory Effect and its Use for DNA Bunches 3D Manipulation
Authors:
A. P. Orlov,
A. V. Frolov,
A. M. Smolovich,
P. V. Lega,
P. V. Chung,
A. V. Irzhak,
N. A. Barinov,
D. V. Klinov,
V. S. Vlasenko,
V. V. Koledov
Abstract:
The DNA molecules were controllable deposited on graphene and thin graphite films and visualized using AFM. The mechanical micro- and nanotools, such as nanotweezers with shape memory effect controlled by heating were designed and tested. A technique for fabricating a structure with the inclusion of suspended DNA threads and manipulating those using composite nanotweezers with shape memory effect…
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The DNA molecules were controllable deposited on graphene and thin graphite films and visualized using AFM. The mechanical micro- and nanotools, such as nanotweezers with shape memory effect controlled by heating were designed and tested. A technique for fabricating a structure with the inclusion of suspended DNA threads and manipulating those using composite nanotweezers with shape memory effect was suggested.
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Submitted 24 January, 2019; v1 submitted 21 January, 2019;
originally announced January 2019.
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Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES
Authors:
Matthew Hamer,
Johanna Zultak,
Anastasia V. Tyurnina,
Viktor Zólyomi,
Daniel Terry,
Alexei Barinov,
Alistair Garner,
Jack Donoghue,
Aidan P. Rooney,
Viktor Kandyba,
Alessio Giampietri,
Abigail J. Graham,
Natalie C. Teutsch,
Xue Xia,
Maciej Koperski,
Sarah J. Haigh,
Vladimir I. Fal'ko,
Roman Gorbachev,
Neil R. Wilson
Abstract:
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilaye…
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Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilayers [7-11]. Here, we apply angle resolved photoemission spectroscopy with submicrometer spatial resolution ($μ$ARPES) to visualise the layer-dependent valence band structure of mechanically exfoliated crystals of InSe. We show that for 1 layer and 2 layer InSe the valence band maxima are away from the $\mathbfΓ$-point, forming an indirect gap, with the conduction band edge known to be at the $\mathbfΓ$-point. In contrast, for six or more layers the bandgap becomes direct, in good agreement with theoretical predictions. The high-quality monolayer and bilayer samples enables us to resolve, in the photoluminescence spectra, the band-edge exciton (A) from the exciton (B) involving holes in a pair of deeper valence bands, degenerate at $\mathbfΓ$, with the splitting that agrees with both $μ$ARPES data and the results of DFT modelling. Due to the difference in symmetry between these two valence bands, light emitted by the A-exciton should be predominantly polarised perpendicular to the plane of the two-dimensional crystal, which we have verified for few-layer InSe crystals.
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Submitted 21 January, 2019;
originally announced January 2019.
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Temperature dependent percolation mechanism for conductivity in Y$_{0.63}$Ca$_{0.37}$TiO$_3$ revealed by a microstructure study
Authors:
R. German,
B. Zimmer,
T. C. Koethe,
A. Barinov,
A. C. Komarek,
M. Braden,
F. Parmigiani,
P. H. M. van Loosdrecht
Abstract:
We have performed optical microscopy, micro-photoelectron spectroscopy, and micro-Raman scattering measurements on Y$_{0.63}$Ca$_{0.37}$TiO$_3$ single crystals in order to clarify the interplay between the microstructure and the temperature dependent electronic transport mechanisms in this material. Optical microscopy observations reveal dark and bright domain patterns on the surface with length s…
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We have performed optical microscopy, micro-photoelectron spectroscopy, and micro-Raman scattering measurements on Y$_{0.63}$Ca$_{0.37}$TiO$_3$ single crystals in order to clarify the interplay between the microstructure and the temperature dependent electronic transport mechanisms in this material. Optical microscopy observations reveal dark and bright domain patterns on the surface with length scales of the order of several to a hundred micrometers showing a pronounced temperature dependent evolution. Spatially resolved photoelectron spectroscopy measurements show the different electronic character of these domains. Using micro-Raman spectroscopy, we observe a distinct temperature dependence of the crystal structure of these domains. On the basis of these findings the different domains are assigned to insulating and metallic volume fractions, respectively. By decreasing the temperature, the volume fraction of the conducting domains increases, hence allowing the electrons to percolate through the sample at temperatures lower than $\sim$150 K.
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Submitted 3 December, 2018;
originally announced December 2018.
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Deposition and Visualization of DNA Molecules on Graphene That is Obtained with the Aid of Mechanical Splitting on a Substrate with an Epoxy Sublayer
Authors:
A. V. Frolov,
N. A. Barinov,
D. V. Klinov,
V. V. Koledov,
P. V. Lega,
A. P. Orlov,
A. M. Smolovich
Abstract:
Controlled deposition of DNA on graphene films obtained with the aid of mechanical splitting of graphite on a substrate with an epoxy sublayer is demonstrated. The DNA molecules are visualized using AFM.
Controlled deposition of DNA on graphene films obtained with the aid of mechanical splitting of graphite on a substrate with an epoxy sublayer is demonstrated. The DNA molecules are visualized using AFM.
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Submitted 7 November, 2018;
originally announced November 2018.
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Assembling nanostructures from DNA using a composite nanotweezers with a shape memory effect
Authors:
Andrey P. Orlov,
Anatoly M. Smolovich,
Nikolay A. Barinov,
Aleksei V. Frolov,
Peter V. Lega,
Dmitry V. Klinov,
Victor V. Koledov
Abstract:
The article demonstrates a technique for fabricating a structure with the inclusion of suspended DNA threads and manipulating them using composite nanotweezers with shape memory effect. This technique could be suitable for stretching of nanothin DNA-like conductive threads and for measuring their electrical conductivity, including the I-V characteristic directly in the electron microscope chamber,…
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The article demonstrates a technique for fabricating a structure with the inclusion of suspended DNA threads and manipulating them using composite nanotweezers with shape memory effect. This technique could be suitable for stretching of nanothin DNA-like conductive threads and for measuring their electrical conductivity, including the I-V characteristic directly in the electron microscope chamber, where the nanotweezers provide a two-sided clam** of the DNA tip, giving a stable nanocontact to the DNA bundle. Such contact, as a part of 1D nanostructure, is more reliable during manipulations with nanothreads than traditional measurements when a nanothread is touched by a thin needle, for example, in a scanning tunnel microscope.
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Submitted 8 August, 2018;
originally announced August 2018.
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Adaptive algorithms for mirror descent in convex programming problems with Lipschitz constraints
Authors:
Fedor S. Stonyakin,
Mohammad S. Alkousa,
Alexey N. Stepanov,
Maxim A. Barinov
Abstract:
The paper is devoted to new modifications of recently proposed adaptive methods of Mirror Descent for convex minimization problems in the case of several convex functional constraints. Methods for problems of two classes are considered. The first type of problems with Lipschitz-continuous objective (generally speaking, nonsmooth) functional. The second one is for problems with a Lipschitz-continuo…
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The paper is devoted to new modifications of recently proposed adaptive methods of Mirror Descent for convex minimization problems in the case of several convex functional constraints. Methods for problems of two classes are considered. The first type of problems with Lipschitz-continuous objective (generally speaking, nonsmooth) functional. The second one is for problems with a Lipschitz-continuous gradient of the objective smooth functional. We consider the class of problems with a non-smooth objective functional equal to the maximum of smooth functionals with a Lipschitz-continuous gradient. Note that functional constraints, generally speaking, are non-smooth and Lipschitz-contionuous. The proposed modifications allow saving the algorithm running time due to consideration of not all functional constraints on non-productive steps. Estimates for the rate of convergence of the methods under consideration are obtained. The methods proposed are optimal from the point of view of lower oracle estimates. The results of numerical experiments illustrating the advantages of the proposed procedure for some examples are given.
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Submitted 27 May, 2018;
originally announced May 2018.
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VUV Pump and probe of phase separation and oxygen interstitials in La2NiO4+y using spectromicroscopy
Authors:
Antonio Bianconi,
Augusto Marcelli,
Markus Bendele,
Davide Innocenti,
Alexei Barinov,
Nathalie Poirot,
Gaetano Campi
Abstract:
While it is known that strongly correlated transition metal oxides described by multi-band Hubbard model show microscopic multiscale phase separation little is known on the possibility to manipulate them with vacuum ultraviolet (VUV) 27 eV lighting. We have investigated the photo-induced effects of VUV illumination of a super-oxygenated La2NiO4+y single crystal by means of scanning photoelectron m…
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While it is known that strongly correlated transition metal oxides described by multi-band Hubbard model show microscopic multiscale phase separation little is known on the possibility to manipulate them with vacuum ultraviolet (VUV) 27 eV lighting. We have investigated the photo-induced effects of VUV illumination of a super-oxygenated La2NiO4+y single crystal by means of scanning photoelectron microscopy. VUV light exposure induces the increase of the density of states (DOS) in the binding energy range around Eb =1.4 eV below EF. The photo-induced states in this energy region have been predicted as due to clustering of oxygen interstitials by band structure calculations for large supercell of La2CuO4.125. We finally show that it possible to generate and manipulate oxygen rich domains by VUV illumination as it was reported for X-ray illumination of La2CuO4+y. This phenomenology is assigned to oxygen-interstitials ordering and clustering by photo-illumination forming segregated domains in the La2NiO4+y surface
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Submitted 18 January, 2018;
originally announced January 2018.
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Spin Texture in Type-II Weyl Semimetal WTe2
Authors:
Baojie Feng,
Yang-Hao Chan,
Ya Feng,
Ro-Ya Liu,
Mei-Yin Chou,
Kenta Kuroda,
Koichiro Yaji,
Ayumi Harasawa,
Paolo Moras,
Alexei Barinov,
Walid G. Malaeb,
Cedric Bareille,
Takeshi Kondo,
Shik Shin,
Fumio Komori,
Tai-Chang Chiang,
Youguo Shi,
Iwao Matsuda
Abstract:
We determine the band structure and spin texture of WTe2 by spin- and angle-resolved photoemission spectroscopy (SARPES). With the support of first-principles calculations, we reveal the existence of spin polarization of both the Fermi arc surface states and bulk Fermi pockets. Our results support WTe2 to be a type-II Weyl semimetal candidate and provide important information to understand its ext…
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We determine the band structure and spin texture of WTe2 by spin- and angle-resolved photoemission spectroscopy (SARPES). With the support of first-principles calculations, we reveal the existence of spin polarization of both the Fermi arc surface states and bulk Fermi pockets. Our results support WTe2 to be a type-II Weyl semimetal candidate and provide important information to understand its extremely large and nonsaturating magnetoresistance.
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Submitted 20 November, 2016; v1 submitted 31 May, 2016;
originally announced June 2016.
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Band parameters and hybridization in 2D semiconductor heterostructures from photoemission spectroscopy
Authors:
Neil R. Wilson,
Paul V. Nguyen,
Kyle L. Seyler,
Pasqual Rivera,
Alexander J. Marsden,
Zachary P. L. Laker,
Gabriel C. Constantinescu,
Viktor Kandyba,
Alexei Barinov,
Nicholas D. M. Hine,
Xiaodong Xu,
David H. Cobden
Abstract:
Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band parameters and orbital hybridization in separate and stacked monolayers, many of which are only available as small samples. The recently introduced technique of an…
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Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band parameters and orbital hybridization in separate and stacked monolayers, many of which are only available as small samples. The recently introduced technique of angle-resolved photoemission spectroscopy with submicron spatial resolution (μ-ARPES) offers the capability to measure small samples, but the energy resolution obtained for such exfoliated samples to date (~0.5 eV) has been inadequate. Here, we show that by suitable heterostructure sample design the full potential of μ-ARPES can be realized. We focus on MoSe2/WSe2 van der Waals heterostructures, which are 2D analogs of 3D semiconductor heterostructures. We find that in a MoSe2/WSe2 heterobilayer the bands in the K valleys are weakly hybridized, with the conduction and valence band edges originating in the MoSe2 and WSe2 respectively. There is stronger hybridization at the Γ point, but the valence band edge remains at the K points. This is consistent with the recent observation of interlayer excitons where the electron and hole are valley polarized but in opposite layers. We determine the valence band offset to be 300 meV, which combined with photoluminescence measurements implies that the binding energy of interlayer excitons is at least 200 meV, comparable with that of intralayer excitons.
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Submitted 21 January, 2016;
originally announced January 2016.
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Spectral characteristics and morphology of nanostructured Pb-S-O thin films synthesized via two different methods
Authors:
H. S. H. Mohamed,
M. Abdel-Hafiez,
B. N. Miroshnikov,
A. D. Barinov,
I. N. Miroshnikova
Abstract:
Using two different experimental techniques, namely, chemical vapor deposition (CVD) and physical vapor deposition (PVD), we deposited a Lead sulphide (PbS) thin films with a very small lifetime. We investigated the morphology of the obtained PbS films using various techniques i.e.AFM, SEM, EDAX, AES and HRTEM . In the case of CVD, we found that the surface consists of grains with dimensions in th…
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Using two different experimental techniques, namely, chemical vapor deposition (CVD) and physical vapor deposition (PVD), we deposited a Lead sulphide (PbS) thin films with a very small lifetime. We investigated the morphology of the obtained PbS films using various techniques i.e.AFM, SEM, EDAX, AES and HRTEM . In the case of CVD, we found that the surface consists of grains with dimensions in the plane (diameter to 300 nm and height up to 200 nm), while the same order of the grain size has been observed for PVD. On the other hand, SEM investigation reveals that the PbS particles with various morphologies of both films have uniform and the particle size distribution. Small amount of Sodium was obtained from EDXS studies, which is may originate from the substrate where the deposition process has been produced at temperature 550-600 deg. and for CVD at minimum accelerating voltage 5kV silicon are presented in the spectrum, which means that the region for X-ray generation voltage data exceeds the thickness of the films (where the thickness of films about 0.4 micron). AES confirm that the surface layer of these films (PVD) containing carbon and oxygen and it has a thickness of 0.1micron. At a depth of 1.3 microns in films these elements is again increased, which corresponds to the film thickness of 1.5 micron. Layers of PVD films are seen by HRTEM and the studies confirm that oxygen-layer located on top of the structure, while the layers of CVD films have not only the oxygen along the crystallite boundaries, but also accumulate in the depth of the boundary with the substrate. Our results of morphology indicate that changing in spectral characteristics of films deposited by (CVD and PVD) is related to the structure and crystalline size.
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Submitted 11 September, 2014;
originally announced September 2014.
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Spectromicroscopy of electronic phase separation in K$_x$Fe$_{2-y}$Se$_2$ superconductor
Authors:
M. Bendele,
A. Barinov,
B. Joseph,
D. Innocenti,
A. Iadecola,
A. Bianconi,
H. Takeya,
Y. Mizuguchi,
Y. Takano,
T. Noji,
T. Hatakeda,
Y. Koike,
M. Horio,
A. Fujimori,
D. Ootsuki,
T. Mizokawa,
N. L. Saini
Abstract:
Structural phase separation in A$_x$Fe$_{2-y}$Se$_2$ system has been studied by different experimental techniques, however, it should be important to know how the electronic uniformity is influenced, on which length scale the electronic phases coexist, and what is their spatial distribution. Here, we have used novel scanning photoelectron microscopy (SPEM) to study the electronic phase separation…
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Structural phase separation in A$_x$Fe$_{2-y}$Se$_2$ system has been studied by different experimental techniques, however, it should be important to know how the electronic uniformity is influenced, on which length scale the electronic phases coexist, and what is their spatial distribution. Here, we have used novel scanning photoelectron microscopy (SPEM) to study the electronic phase separation in K$_x$Fe$_{2-y}$Se$_2$, providing a direct measurement of the topological spatial distribution of the different electronic phases. The SPEM results reveal a peculiar interconnected conducting filamentary phase that is embedded in the insulating texture. The filamentary structure with a particular topological geometry could be important for the high T$_c$ superconductivity in the presence of a phase with a large magnetic moment in A$_x$Fe$_{2-y}$Se$_2$ materials.
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Submitted 21 July, 2014;
originally announced July 2014.
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High resolution characterisation of microstructural evolution in Rb$_{x}$Fe$_{2-y}$Se$_{2}$ crystals on annealing
Authors:
S. C. Speller,
P. Dudin,
S. Fitzgerald,
G. M. Hughes,
K. Kruska,
T. B. Britton,
A. Krzton-Maziopa,
E. Pomjakushina,
K. Conder,
A. Barinov,
C. R. M. Grovenor
Abstract:
The superconducting and magnetic properties of phase-separated A$_x$Fe$_{2-y}$Se$_2$ compounds are known to depend on post-growth heat treatments and cooling profiles. This paper focusses on the evolution of microstructure on annealing, and how this influences the superconducting properties of Rb$_x$Fe$_2-y$Se$_2$ crystals. We find that the minority phase in the as-grown crystal has increased unit…
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The superconducting and magnetic properties of phase-separated A$_x$Fe$_{2-y}$Se$_2$ compounds are known to depend on post-growth heat treatments and cooling profiles. This paper focusses on the evolution of microstructure on annealing, and how this influences the superconducting properties of Rb$_x$Fe$_2-y$Se$_2$ crystals. We find that the minority phase in the as-grown crystal has increased unit cell anisotropy (c/a ratio), reduced Rb content and increased Fe content compared to the matrix. The microstructure is rather complex, with two-phase mesoscopic plate-shaped features aligned along {113} habit planes. The minority phase are strongly facetted on the {113} planes, which we have shown to be driven by minimising the volume strain energy introduced as a result of the phase transformation. Annealing at 488K results in coarsening of the mesoscopic plate-shaped features and the formation of a third distinct phase. The subtle differences in structure and chemistry of the minority phase(s) in the crystals are thought to be responsible for changes in the superconducting transition temperature. In addition, scanning photoemission microscopy has clearly shown that the electronic structure of the minority phase has a higher occupied density of states of the low binding energy Fe3d orbitals, characteristic of crystals that exhibit superconductivity. This demonstrates a clear correlation between the Fe-vacancy-free phase with high c/a ratio and the electronic structure characteristics of the superconducting phase.
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Submitted 6 June, 2014; v1 submitted 3 June, 2014;
originally announced June 2014.
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A Microscopic View on the Mott transition in Chromium-doped V2O3
Authors:
S. Lupi,
L. Baldassarre,
B. Mansart,
A. Perucchi,
A. Barinov,
P. Dudin,
E. Papalazarou,
F. Rodolakis,
J. -P. Rueff,
J. -P. Itié,
S. Ravy,
D. Nicoletti,
P. Postorino,
P. Hansmann,
N. Parragh,
A. Toschi,
T. Saha-Dasgupta,
O. K. Andersen,
G. Sangiovanni,
K. Held,
M. Marsi
Abstract:
V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, do** or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic insulator (PI). This or related MITs have a high technological potential, among others for intelligent windows and field effect transistors. However th…
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V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, do** or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic insulator (PI). This or related MITs have a high technological potential, among others for intelligent windows and field effect transistors. However the spatial scale on which such transitions develop is not known in spite of their importance for research and applications. Here we unveil for the first time the MIT in Cr-doped V2O3 with submicron lateral resolution: with decreasing temperature, microscopic domains become metallic and coexist with an insulating background. This explains why the associated PM phase is actually a poor metal. The phase separation can be associated with a thermodynamic instability near the transition. This instability is reduced by pressure which drives a genuine Mott transition to an eventually homogeneous metallic state.
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Submitted 8 November, 2010; v1 submitted 2 November, 2010;
originally announced November 2010.
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Calculation of the anomalous exponents in the rapid-change model of passive scalar advection to order $\varepsilon^{3}$
Authors:
L. Ts. Adzhemyan,
N. V. Antonov,
V. A. Barinov,
Yu. S. Kabrits,
A. N. Vasil'ev
Abstract:
The field theoretic renormalization group and operator product expansion are applied to the model of a passive scalar advected by the Gaussian velocity field with zero mean and correlation function $\proptoδ(t-t')/k^{d+\eps}$. Inertial-range anomalous exponents, identified with the critical dimensions of various scalar and tensor composite operators constructed of the scalar gradients, are calcu…
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The field theoretic renormalization group and operator product expansion are applied to the model of a passive scalar advected by the Gaussian velocity field with zero mean and correlation function $\proptoδ(t-t')/k^{d+\eps}$. Inertial-range anomalous exponents, identified with the critical dimensions of various scalar and tensor composite operators constructed of the scalar gradients, are calculated within the $\varepsilon$ expansion to order $\varepsilon^{3}$ (three-loop approximation), including the exponents in anisotropic sectors. The main goal of the paper is to give the complete derivation of this third-order result, and to present and explain in detail the corresponding calculational techniques. The character and convergence properties of the $\varepsilon$ expansion are discussed; the improved ``inverse'' $\varepsilon$ expansion is proposed and the comparison with the existing nonperturbative results is given.
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Submitted 15 June, 2001;
originally announced June 2001.
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Anomalous exponents in the rapid-change model of the passive scalar advection in the order $ε^{3}$
Authors:
L. Ts. Adzhemyan,
N. V. Antonov,
V. A. Barinov,
Yu. S. Kabrits,
A. N. Vasil'ev
Abstract:
Field theoretic renormalization group is applied to the Kraichnan model of a passive scalar advected by the Gaussian velocity field with the covariance $<{\bf v}(t,{\bf x}){\bf v}(t',{\bf x})> - <{\bf v}(t,{\bf x}){\bf v}(t',{\bf x'})> \proptoδ(t-t')|{\bf x}-{\bf x'} |^ε$. Inertial-range anomalous exponents, related to the scaling dimensions of tensor composite operators built of the scalar grad…
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Field theoretic renormalization group is applied to the Kraichnan model of a passive scalar advected by the Gaussian velocity field with the covariance $<{\bf v}(t,{\bf x}){\bf v}(t',{\bf x})> - <{\bf v}(t,{\bf x}){\bf v}(t',{\bf x'})> \proptoδ(t-t')|{\bf x}-{\bf x'} |^ε$. Inertial-range anomalous exponents, related to the scaling dimensions of tensor composite operators built of the scalar gradients, are calculated to the order $ε^{3}$ of the $ε$ expansion. The nature and the convergence of the $ε$ expansion in the models of turbulence is are briefly discussed.
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Submitted 17 January, 2001; v1 submitted 17 October, 2000;
originally announced October 2000.
