Showing 1–50 of 65 results for author: Banerjee, S K

Band Alignment in Black Phosphorus/Transition Metal Dichalcogenide Heterolayers: Impact of Charge Redistribution, Electric Field, Strain and Layer Engineering

Authors: Nupur Navlakha, Priyamvada Jadaun, Leonard F. Register, Sanjay K. Banerjee

Abstract: The objective of this work is to study the effects of charge redistribution, applied layer-normal electric fields, applied strain, and layer engineering on the band alignment of Black Phosphorus (BP)/Molybdenum disulphide (MoS2) heterostructure through Density Functional Theory (DFT) simulations. Black phosphorus works as a p-type material with high mobility, mechanical flexibility, and sensitivit… ▽ More The objective of this work is to study the effects of charge redistribution, applied layer-normal electric fields, applied strain, and layer engineering on the band alignment of Black Phosphorus (BP)/Molybdenum disulphide (MoS2) heterostructure through Density Functional Theory (DFT) simulations. Black phosphorus works as a p-type material with high mobility, mechanical flexibility, and sensitivity to number of layers. Combining it with the more electronegative material, MoS2 results in strong carrier confinement and a Type II heterostructure. Charge redistribution among the layers shifts the band alignment expected from the Electron Affinity Rule. Applied external fields, strain and multiple BP layers provide band-alignment tunability within the Type II range and/or, transition to Type I and Type III heterostructures. The tunability in BP/MoS2 heterostructure may be useful as tunnel field effect transistors, rectifier diodes with tunable barrier height, reconfigurable FETs, and electro-optical modulators. Furthermore, considering heterostructures of monolayer BP with other monolayer Transitional Metal Dichalcogenides (TMD) suggests the ability to achieve different band alignment types. In our simulations, a Type I alignment is found with Tungsten diselenide (WSe2), Molybdenum diselenide (MoSe2), and Tungsten disulphide (WS2), and a Type III for Hafnium disulphide (HfS2) and Hafnium diselenide (HfSe2). △ Less

Submitted 16 August, 2022; v1 submitted 29 March, 2022; originally announced March 2022.

Large spin Hall effect in 5d-transition metal anti-perovskites

Authors: Priyamvada Jadaun, Leonard F. Register, Sanjay K. Banerjee

Abstract: The spin Hall effect (SHE) is highly promising for spintronic applications, and the design of materials with large SHE can enable ultra-low power memory technology. Recently, 5d-transition metal oxides have been shown to demonstrate a large SHE. Here we report large values of SHE in four 5d-transition metal anti-perovskites which makes these anti-perovskites promising spintronic materials. We demo… ▽ More The spin Hall effect (SHE) is highly promising for spintronic applications, and the design of materials with large SHE can enable ultra-low power memory technology. Recently, 5d-transition metal oxides have been shown to demonstrate a large SHE. Here we report large values of SHE in four 5d-transition metal anti-perovskites which makes these anti-perovskites promising spintronic materials. We demonstrate that these effects originate in the mixing of dx2-y2 and dxy orbitals caused by spin orbit coupling. △ Less

Submitted 24 October, 2020; originally announced October 2020.

Structural and Magnetic Properties of Molecular Beam Epitaxy Grown Chromium Selenide Thin Films

Authors: Anupam Roy, Rik Dey, Tanmoy Pramanik, Amritesh Rai, Ryan Schalip, Sarmita Majumder, Samaresh Guchhait, Sanjay K Banerjee

Abstract: Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in scanning tunneling microscopy indicate a flat smooth film growth along the c-axis, and is very similar to that from a hexagonal surface. X-ray diffraction patt… ▽ More Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in scanning tunneling microscopy indicate a flat smooth film growth along the c-axis, and is very similar to that from a hexagonal surface. X-ray diffraction pattern confirms the growth along the c-axis with c-axis lattice constant of 17.39 Å. The grown film is semiconducting, having a small band gap of about 0.034 eV, as calculated from the temperature dependent resistivity. Antiferromagnetic nature of the film with a Néel temperature of about 40 K is estimated from the magnetic exchange bias measurements. A larger out-of-plane exchange bias, along with a smaller in-plane exchange bias is observed below 40 K. Exchange bias training effects are analyzed based on different models and are observed to be following a modified power-law decay behavior. △ Less

Submitted 2 March, 2020; originally announced March 2020.

Comments: 14 Pages, 6 Figures + Supporting Information

Journal ref: Phys. Rev. Materials 4, pp. 025001 (2020)

Rational design principles for giant spin Hall effect in 5d-transition metal oxides

Authors: Priyamvada Jadaun, Leonard F Register, Sanjay K Banerjee

Abstract: Spin Hall effect (SHE), a mechanism by which materials convert a \textit{charge} current into a \textit{spin} current, invokes interesting physics and promises to empower transformative, energy-efficient memory technology. However, fundamental questions remain about the essential factors that determine SHE. Here we solve this open problem, presenting a comprehensive theory of five \textit{foundati… ▽ More Spin Hall effect (SHE), a mechanism by which materials convert a \textit{charge} current into a \textit{spin} current, invokes interesting physics and promises to empower transformative, energy-efficient memory technology. However, fundamental questions remain about the essential factors that determine SHE. Here we solve this open problem, presenting a comprehensive theory of five \textit{foundational factors} that control the value of intrinsic SHE in transition metal oxides. Arising from our key insight regarding the inherently geometric nature of SHE, we demonstrate that two of these factors are crystal field strength and structural distortions. Moreover, we discover that a new class of materials (anti-perovskites) promises to demonstrate \textit{giant} SHE, that is an order of magnitude larger than that reported for any oxide. We derive three other factors that control SHE and demonstrate the nuanced role of electron correlations. Our findings bring deeper insight into the physics driving SHE, and could help enhance, as well as, externally control SHE values. △ Less

Submitted 1 December, 2019; v1 submitted 16 September, 2019; originally announced September 2019.

Journal ref: Proceedings of the National Academy of Science, 117, 11878-11886 (2020)

Semi-Classical Monte Carlo Simulation of Contact Geometry, Orientation, and Ideality on Nano-scale Si and III-V n-channel FinFETs in the Quasi-Ballistic Limit

Authors: Aqyan A. Bhatti, Dax M. Crum, Amith Valsaraj, Leonard F. Register, Sanjay K. Banerjee

Abstract: The effects of contact geometry and ideality on InGaAs and Si nano-scale n-channel FinFET performance are studied using a quantum-corrected semi-classical Monte Carlo method. Illustrative end, saddle/slot, and raised source/drain contacts were modeled, and with ideal transmissivity and reduced transmissivity more consistent with experimental contact resistivities. Far-from-equilibrium degenerate s… ▽ More The effects of contact geometry and ideality on InGaAs and Si nano-scale n-channel FinFET performance are studied using a quantum-corrected semi-classical Monte Carlo method. Illustrative end, saddle/slot, and raised source/drain contacts were modeled, and with ideal transmissivity and reduced transmissivity more consistent with experimental contact resistivities. Far-from-equilibrium degenerate statistics, quantum-confinement effects on carrier distributions in real-space and among energy valleys, quasi-ballistic transport inaccessible through drift-diffusion and hydrodynamic simulations, and scattering mechanisms and contact geometries not readily accessible through non-equilibrium Green's function simulation are addressed. Silicon $\langle \hbox{110} \rangle$ channel devices, Si $\langle \hbox{100} \rangle$ channel devices, multi-valley (MV) InGaAs devices with conventionally-reported energy valley offsets, and idealized $Γ$-valley only $\left( Γ\right)$ InGaAs devices are modeled. Simulated silicon devices exhibited relatively limited degradation in performance due to non-ideal contact transmissivities, more limited sensitivity to contact geometry with non-ideal contact transmissivities, and some contact-related advantage for Si $\langle \hbox{110} \rangle$ channel devices. In contrast, simulated InGaAs devices were highly sensitive to contact geometry and ideality and the peripheral valley's energy offset. It is illustrative of this latter sensitivity that simulated $Γ$-InGaAs device outperformed all others by a factor of two or more in terms of peak transconductance with perfectly transmitting reference end contacts, while silicon devices outperformed $Γ$-InGaAs for all contact geometries with non-ideal transmissivities, and MV-InGaAs devices performed the poorest under all simulation scenarios. △ Less

Submitted 28 March, 2019; originally announced March 2019.

The microscopic origin of DMI in magnetic bilayers and prediction of giant DMI in new bilayers

Authors: Priyamvada Jadaun, Leonard F Register, Sanjay K Banerjee

Abstract: Skyrmions are widely regarded as promising candidates for emergent spintronic devices. Dzyaloshinskii-Moriya interaction (DMI) is often critical to the generation and manipulation of skyrmions. However, there is a fundamental lack of understanding of the origin of DMI or the mechanism by which DMI generates skyrmions in magnetic bilayers. Very little is known of the material parameters that determ… ▽ More Skyrmions are widely regarded as promising candidates for emergent spintronic devices. Dzyaloshinskii-Moriya interaction (DMI) is often critical to the generation and manipulation of skyrmions. However, there is a fundamental lack of understanding of the origin of DMI or the mechanism by which DMI generates skyrmions in magnetic bilayers. Very little is known of the material parameters that determine the value of DMI. This knowledge is vital for rational design of skyrmion materials and further development of skyrmion technology. To address this important problem, we investigate DMI in magnetic bilayers using first-principles. We present a new theoretical model that explains the microscopic origin of DMI in magnetic bilayers. We demonstrate that DMI depends on two parameters, interfacial hybridization and orbital contributions of the heavy metal. Using these parameters, we explain the trend of DMI observed. We also report four new materials systems with giant DMI and new designs for magnetic multilayers that are expected to outperform the best materials known so far. Our results present a notably new understanding of DMI, uncover highly promising materials and put forth novel pathways for the controlled generation of skyrmions. △ Less

Submitted 30 September, 2019; v1 submitted 21 March, 2019; originally announced March 2019.

Journal ref: npj Computational Materials volume 6, Article number: 88 (2020)

Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors

Authors: Di Wu, Wei Li, Amritesh Rai, Xiaoyu Wu, Hema C. P. Movva, Maruthi N. Yogeesh, Zhaodong Chu, Sanjay K. Banerjee, Deji Akinwande, Keji Lai

Abstract: The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical i… ▽ More The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing anti-ambipolar effect in the transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS2 and holes in the p-type WSe2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The configuration is analogous to the p-i-n diode, where the injected carriers dominate in the recombination current. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS2-heterostructure-WSe2. Our work vividly demonstrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research. △ Less

Submitted 21 February, 2019; originally announced February 2019.

Comments: 18 pages, 4 figures, Just accepted by Nano Letters

Journal ref: Nano Letters, 2019

Moiré Excitons in Van der Waals Heterostructures

Authors: Kha Tran, Galan Moody, Fengcheng Wu, Xiaobo Lu, Junho Choi, Akshay Singh, Jacob Embley, André Zepeda, Marshall Campbell, Kyounghwan Kim, Amritesh Rai, Travis Autry, Daniel A. Sanchez, Takashi Taniguchi, Kenji Watanabe, Nanshu Lu, Sanjay K. Banerjee, Emanuel Tutuc, Li Yang, Allan H. MacDonald, Kevin L. Silverman, Xiaoqin Li

Abstract: In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. While it is widely recognized that a moiré superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlati… ▽ More In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. While it is widely recognized that a moiré superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlations, its influence on optical properties has not been investigated experimentally. We present spectroscopic evidence that interlayer excitons are confined by the moiré potential in a high-quality MoSe2/WSe2 heterobilayer with small rotational twist. A series of interlayer exciton resonances with either positive or negative circularly polarized emission is observed in photoluminescence, consistent with multiple exciton states confined within the moiré potential. The recombination dynamics and temperature dependence of these interlayer exciton resonances are consistent with this interpretation. These results demonstrate the feasibility of engineering artificial excitonic crystals using vdW heterostructures for nanophotonics and quantum information applications. △ Less

Submitted 10 July, 2018; originally announced July 2018.

Large effective mass and interaction-enhanced Zeeman splitting of $K$-valley electrons in MoSe$_2$

Authors: Stefano Larentis, Hema C. P. Movva, Babak Fallahazad, Kyoughwan Kim, Armad Behroozi, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, Emanuel Tutuc

Abstract: We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe$_2$, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8$m_e$ is extracted from the SdH oscillations' temperature dependence; $m_e$ is the bare electron mass. At a fixed electron density the longitudinal resistance shows minima at fil… ▽ More We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe$_2$, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8$m_e$ is extracted from the SdH oscillations' temperature dependence; $m_e$ is the bare electron mass. At a fixed electron density the longitudinal resistance shows minima at filling factors (FFs) that are either predominantly odd, or predominantly even, with a parity that changes as the density is tuned. The SdH oscillations are insensitive to an in-plane magnetic field, consistent with an out-of-plane spin orientation of electrons at the $K$-point. We attribute the FFs parity transitions to an interaction enhancement of the Zeeman energy as the density is reduced, resulting in an increased Zeeman-to-cyclotron energy ratio. △ Less

Submitted 16 May, 2018; v1 submitted 26 April, 2018; originally announced April 2018.

Comments: 5 pages, 5 figures; includes supplemental material

Journal ref: Phys. Rev. B 97, 201407(R) (2018)

Tunable $Γ- K$ Valley Populations in Hole-Doped Trilayer WSe$_2$

Authors: Hema C. P. Movva, Timothy Lovorn, Babak Fallahazad, Stefano Larentis, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, Allan H. MacDonald, Emanuel Tutuc

Abstract: We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe$_2$. Shubnikov$-$de Haas oscillations show that trilayer holes populate two distinct subbands associated with the $K$ and $Γ$ valleys, with effective masses 0.5$m_e$ and $1.2m_e$, respectively; $m_e$ is the bare electron mass. At a fixed total hole density, an applied transverse elec… ▽ More We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe$_2$. Shubnikov$-$de Haas oscillations show that trilayer holes populate two distinct subbands associated with the $K$ and $Γ$ valleys, with effective masses 0.5$m_e$ and $1.2m_e$, respectively; $m_e$ is the bare electron mass. At a fixed total hole density, an applied transverse electric field transfers holes from $Γ$ orbitals to $K$ orbitals. We are able to explain this behavior in terms of the larger layer polarizability of the $K$ orbital subband. △ Less

Submitted 10 January, 2018; originally announced January 2018.

Comments: 5 pages, 4 figures, includes supplementary material

Journal ref: Phys. Rev. Lett. 120, 107703 (2018)

Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators

Authors: Tanuj Trivedi, Anupam Roy, Hema C. P. Movva, Emily S. Walker, Seth R. Bank, Dean P. Neikirk, Sanjay K. Banerjee

Abstract: As the focus of applied research in topological insulators (TI) evolves, the need to synthesize large-area TI films for practical device applications takes center stage. However, constructing scalable and adaptable processes for high-quality TI compounds remains a challenge. To this end, a versatile van der Waals epitaxy (vdWE) process for custom-feature Bismuth Telluro-Sulfide TI growth and fabri… ▽ More As the focus of applied research in topological insulators (TI) evolves, the need to synthesize large-area TI films for practical device applications takes center stage. However, constructing scalable and adaptable processes for high-quality TI compounds remains a challenge. To this end, a versatile van der Waals epitaxy (vdWE) process for custom-feature Bismuth Telluro-Sulfide TI growth and fabrication is presented, achieved through selective-area fluorination and modification of surface free-energy on mica. The TI features grow epitaxially in large single-crystal trigonal domains, exhibiting armchair or zigzag crystalline edges highly oriented with the underlying mica lattice and only two preferred domain orientations mirrored at $180^\circ$. As-grown feature thickness dependence on lateral dimensions and denuded zones at boundaries are observed, as explained by a semi-empirical two-species surface migration model with robust estimates of growth parameters and elucidating the role of selective-area surface modification. Topological surface states contribute up to 60% of device conductance at room-temperature, indicating excellent electronic quality. High-yield microfabrication and the adaptable vdWE growth mechanism with readily alterable precursor and substrate combinations, lend the process versatility to realize crystalline TI synthesis in arbitrary shapes and arrays suitable for facile integration with processes ranging from rapid prototy** to scalable manufacturing. △ Less

Submitted 16 July, 2017; originally announced July 2017.

Comments: 26 pages including Supporting Information: 15 figures, 1 table

Journal ref: ACS Nano 11 (7), pp 7457-7467 (2017)

Impact of Junction Depth and Abruptness on the Activation and the Leakage Current in Germanium n$^{+}$/p Junctions

Authors: William Hsu, Amritesh Rai, Xiaoru Wang, Yun Wang, Taegon Kim, Sanjay K. Banerjee

Abstract: The phosphorous activation in Ge n$^{+}$/p junctions is compared in terms of junction depth, by using laser spike annealing at 860°C for 400$μ$s. The reverse junction leakage is found to strongly depend on the abruptness of dopant profiles. A shallow and abrupt junction is shown to have lower phosphorous activation level, due to surface dose loss, and higher band-to-band tunneling (BTBT) leakage,… ▽ More The phosphorous activation in Ge n$^{+}$/p junctions is compared in terms of junction depth, by using laser spike annealing at 860°C for 400$μ$s. The reverse junction leakage is found to strongly depend on the abruptness of dopant profiles. A shallow and abrupt junction is shown to have lower phosphorous activation level, due to surface dose loss, and higher band-to-band tunneling (BTBT) leakage, when compared to the deep junction. Simulations were carried out to evaluate the lowest achievable OFF-state currents (I$_{OFF}$) for Ge double-gate FETs when using such an abrupt junction. Our results indicate that a Ge body thickness smaller than 5 nm is required to suppress the BTBT leakage and meet the requirement for the high performance devices defined by the International Technology Roadmap for Semiconductors (I$_{OFF}$ = 10$^{-7}$ A/$μ$m). △ Less

Submitted 18 May, 2017; originally announced May 2017.

Comments: 4 pages, 4 figures

Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

Authors: Tanmoy Pramanik, Anupam Roy, Rik Dey, Amritesh Rai, Samaresh Guchhait, Hema CP Movva, Cheng-Chih Hsieh, Sanjay K Banerjee

Abstract: We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitativ… ▽ More We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process. △ Less

Submitted 8 May, 2017; originally announced May 2017.

Comments: 14 pages, 6 figures

Intra-Domain Periodic Defects in Monolayer MoS$_2$

Authors: Anupam Roy, Rudresh Ghosh, Amritesh Rai, Atresh Sanne, Kyounghwan Kim, Hema C. P. Movva, Rik Dey, Tanmoy Pramanik, Sayema Chowdhury, Emanuel Tutuc, Sanjay K. Banerjee

Abstract: We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other inter-domain grain boundaries of various types, is observed. These periodic defects, about 50 nm… ▽ More We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other inter-domain grain boundaries of various types, is observed. These periodic defects, about 50 nm apart and a few nanometers in width, remain hidden in optical or low-resolution microscopy studies. We report a complex growth mechanism that produces 2D nucleation and spiral growth features that can explain the topography in our films. △ Less

Submitted 8 May, 2017; originally announced May 2017.

Comments: To appear in Appl. Phys. Lett. 13 pages, 3 figures. Includes Supplementary Material

Journal ref: Appl. Phys. Lett. 110, 201905 (2017)

Detection of current induced spin polarization in epitaxial Bi$_2$Te$_3$ thin film

Authors: Rik Dey, Anupam Roy, Tanmoy Pramanik, Amritesh Rai, Seung Heon Shin, Sarmita Majumder, Leonard F. Register, Sanjay K. Banerjee

Abstract: We electrically detect charge current induced spin polarization on the surface of molecular beam epitaxy grown Bi$_2$Te$_3$ thin film in a two-terminal device with a ferromagnetic MgO/Fe and a nonmagnetic Ti/Au contact. The two-point resistance, measured in an applied magnetic field, shows a hysteresis tracking the magnetization of the Fe. A theoretical estimate is obtained for the change in resis… ▽ More We electrically detect charge current induced spin polarization on the surface of molecular beam epitaxy grown Bi$_2$Te$_3$ thin film in a two-terminal device with a ferromagnetic MgO/Fe and a nonmagnetic Ti/Au contact. The two-point resistance, measured in an applied magnetic field, shows a hysteresis tracking the magnetization of the Fe. A theoretical estimate is obtained for the change in resistance on reversing the magnetization direction of Fe from coupled spin-charge transport equations based on quantum kinetic theory. The order of magnitude and the sign of the hysteresis is consistent with spin-polarized surface state of Bi$_2$Te$_3$. △ Less

Submitted 6 April, 2017; originally announced April 2017.

Comments: 11 pages (including references), 4 figures (including supplementary information), accepted in journal

Journal ref: Applied Physics Letters 110, 122403 (2017)

Room temperature zero field skyrmions in Fe-based thin film stacks

Authors: Sarmita Majumder, Priyamvada Jadaun, Tanmay Pramanik, Sanjay K. Banerjee

Abstract: A new paradigm is required to facilitate the demand for the huge data storage capacity and faster data processing in the future. Nano structures such as magnetic skyrmions have been predicted to address this issues as these vortex structures are the smallest particle-like magnetic features and are topologically protected from crystallographic defects or magnetic disorder. We report here stable sky… ▽ More A new paradigm is required to facilitate the demand for the huge data storage capacity and faster data processing in the future. Nano structures such as magnetic skyrmions have been predicted to address this issues as these vortex structures are the smallest particle-like magnetic features and are topologically protected from crystallographic defects or magnetic disorder. We report here stable skyrmions at room temperature and with zero applied field in ebeam evaporated Ir Fe Ir MgO thin film stacks. Micromagnetic simulations show that these skyrmions are induced by interfacial Dzyaloshinskii Moriya interactions between the ferromagnetic and heavy metal ultra thin layers values in the range between 3.1 to 3.6. We also show the field dependencies of the skyrmion width and density. The room temperature zero field width is 110 nm, approximately comparable to the value showed by Fert et al and Boulle et al for the multi stacks thin film. DFT calculations corroborate our experimental results by predicting a DMI value of 3.67. △ Less

Submitted 18 March, 2017; v1 submitted 28 February, 2017; originally announced March 2017.

Comments: Our DFT calculations need a revision. Also, we need to redo our MFM and VSM measurements. We need to redo our micromagnetic simulation too

Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe$_2$

Authors: Hema C. P. Movva, Babak Fallahazad, Kyounghwan Kim, Stefano Larentis, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, Emanuel Tutuc

Abstract: We report a study of the quantum Hall states (QHSs) sequence of holes in mono- and bilayer WSe$_2$. The QHSs sequence transitions between predominantly even and predominantly odd filling factors as the hole density is tuned in the range $1.6 - 12\times10^{12}$ cm$^{-2}$. The QHSs sequence is insensitive to the transverse electric field, and tilted magnetic field measurements reveal an insensitivit… ▽ More We report a study of the quantum Hall states (QHSs) sequence of holes in mono- and bilayer WSe$_2$. The QHSs sequence transitions between predominantly even and predominantly odd filling factors as the hole density is tuned in the range $1.6 - 12\times10^{12}$ cm$^{-2}$. The QHSs sequence is insensitive to the transverse electric field, and tilted magnetic field measurements reveal an insensitivity of the QHSs sequence to the in-plane magnetic field, evincing that the hole spin is locked perpendicular to the WSe$_2$ plane. These observations imply that the QHSs sequence is controlled by the Zeeman-to-cyclotron energy ratio, which remains constant as a function of perpendicular magnetic field at a fixed carrier density, but changes as a function of density due to strong electron-electron interaction. △ Less

Submitted 16 February, 2017; originally announced February 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 118, 247701 (2017)

DFT Simulations of Inter-Graphene-Layer Coupling with Rotationally Misaligned hBN Tunnel Barriers in Graphene/hBN/Graphene Tunnel FETs

Authors: Amithraj Valsaraj, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee

Abstract: Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during layer-by-layer exfoliation of these multi-layer materials, rotational misalignment is the norm and may substantially affect device characteristics. In this work, by… ▽ More Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during layer-by-layer exfoliation of these multi-layer materials, rotational misalignment is the norm and may substantially affect device characteristics. In this work, by using density functional theory methods, we consider a reduction in tunneling due to weakened coupling across the rotationally misaligned interface between the channel layers and the tunnel barrier. As a prototypical system, we simulate the effects of rotational misalignment of the tunnel barrier layer between aligned channel layers in a graphene/hBN/graphene system. We find that rotational misalignment between the channel layers and the tunnel barrier in this van der Waal's heterostructure can significantly reduce coupling between the channels by reducing, specifically, coupling across the interface between the channels and the tunnel barrier. This weakened coupling in graphene/hBN/graphene with hBN misalignment may be relevant to all such van der Waal's heterostructures. △ Less

Submitted 7 October, 2016; originally announced October 2016.

Comments: 12 pages, 7 figures

Journal ref: Journal of Applied Physics 120, 134310 (2016)

Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays

Authors: Cheng-Chih Hsieh, Yao-Feng Chang, Ying-Chen Chen, Heng-Lu Chang, Davood Shahrjerdi, Sanjay. K. Banerjee

Abstract: In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and do** level are investigated by numerical simulation, experiments and current-voltage equati… ▽ More In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and do** level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory(RRAM) arrays. △ Less

Submitted 9 May, 2016; originally announced May 2016.

Air Stable Do** and Intrinsic Mobility Enhancement in Monolayer $MoS_{2}$ by Amorphous $TiO_{x}$ Encapsulation

Authors: Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva, Anupam Roy, Rudresh Ghosh, Sushant Sonde, Sangwoo Kang, Jiwon Chang, Tanuj Trivedi, Rik Dey, Samaresh Guchhait, Stefano Larentis, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee

Abstract: To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring various do** techniques and dielectric engineering using $high-κ$ oxides, respectively. The goal of this work is to demonstrate a $high-κ$ dielectric t… ▽ More To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring various do** techniques and dielectric engineering using $high-κ$ oxides, respectively. The goal of this work is to demonstrate a $high-κ$ dielectric that serves as an effective n-type charge transfer dopant on monolayer (ML) molybdenum disulfide ($MoS_{2}$). Utilizing amorphous titanium suboxide (ATO) as the '$high-κ$ dopant', we achieved a contact resistance of ~ $180$ $Ω.μm$ which is the lowest reported value for ML $MoS_{2}$. An ON current as high as $240$ $μA/μm$ and field effect mobility as high as $83$ $cm^2/V-s$ were realized using this do** technique. Moreover, intrinsic mobility as high as $102$ $cm^2/V-s$ at $300$ $K$ and $501$ $cm^2/V-s$ at $77$ $K$ were achieved after ATO encapsulation which are among the highest mobility values reported on ML $MoS_{2}$. We also analyzed the do** effect of ATO films on ML $MoS_{2}$, a phenomenon which is absent when stoichiometric $TiO_{2}$ is used, using ab initio density functional theory (DFT) calculations which shows excellent agreement with our experimental findings. Based on the interfacial-oxygen-vacancy mediated do** as seen in the case of $high-κ$ ATO - ML $MoS_{2}$, we propose a mechanism for the mobility enhancement effect observed in TMD-based devices after encapsulation in a $high-κ$ dielectric environment. △ Less

Submitted 22 April, 2016; originally announced April 2016.

Comments: 31 pages, 6 figures, 5 supporting figures, Nano Letters 2015

Journal ref: Nano Lett., 2015, 15(7), pp 4329-4336

Ensemble Monte Carlo for III-V and Si n-channel FinFETs considering non-equilibrium degenerate statistics and quantum-confined scattering

Authors: Dax M. Crum, Amithraj Valsaraj, John K. David, Leonard F. Register, Sanjay K. Banerjee

Abstract: Particle-based ensemble semi-classical Monte Carlo (MC) methods employ quantum corrections (QCs) to address quantum confinement and degenerate carrier populations to model tomorrow's ultra-scaled MOSFETs. Here we present new approaches to quantum confinement and carrier degeneracy effects in a three-dimensional (3D) MC device simulator, and illustrate their significance through simulation of n-cha… ▽ More Particle-based ensemble semi-classical Monte Carlo (MC) methods employ quantum corrections (QCs) to address quantum confinement and degenerate carrier populations to model tomorrow's ultra-scaled MOSFETs. Here we present new approaches to quantum confinement and carrier degeneracy effects in a three-dimensional (3D) MC device simulator, and illustrate their significance through simulation of n-channel Si and III-V FinFETs. Original contributions include our treatment of far-from-equilibrium degenerate statistics and QC-based modeling of surface-roughness scattering, as well as considering quantum-confined phonon and impurity scattering in 3D. Typical MC simulations approximate degenerate carrier populations as Fermi distributions to model the Pauli-blocking (PB) of scattering to occupied final states. To allow for increasingly far-from-equilibrium non-Fermi carrier distributions in ultra-scaled devices, we instead generate the final-state occupation probabilities used for PB by sampling the local carrier populations as a function of energy and energy valley. This process is aided by the use of fractional carriers or sub-carriers, which minimizes classical carrier-carrier scattering. Quantum confinement effects are addressed through quantum-correction potentials (QCPs) generated from Schrödinger-Poisson solvers, as commonly done. However, we use our valley- and orientation-dependent QCPs not just to redistribute carriers in real space, or even among energy valleys, but also to calculate confinement-dependent phonon, impurity, and surface-roughness scattering rates. FinFET simulations are used to illustrate how, collectively, these quantum effects can substantially reduce and even eliminate otherwise expected benefits of In$_{\text{0.53}}$Ga$_{\text{0.47}}$As FinFETs over otherwise identical Si FinFETs, despite higher thermal velocities in In$_{\text{0.53}}$Ga$_{\text{0.47}}$As. △ Less

Submitted 31 March, 2016; originally announced April 2016.

Write error rate of spin-transfer-torque random access memory including micromagnetic effects using rare event enhancement

Authors: Urmimala Roy, Tanmoy Pramanik, Leonard F. Register, Sanjay K. Banerjee

Abstract: Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next-generation of random-access-memory due to improved scalability, read-write speeds and endurance. However, the write pulse duration must be long enough to ensure a low write error rate (WER), the probability that a bit will remain unswitched after the write pulse is turned off, in the presence of stochastic th… ▽ More Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next-generation of random-access-memory due to improved scalability, read-write speeds and endurance. However, the write pulse duration must be long enough to ensure a low write error rate (WER), the probability that a bit will remain unswitched after the write pulse is turned off, in the presence of stochastic thermal effects. WERs on the scale of 10$^{-9}$ or lower are desired. Within a macrospin approximation, WERs can be calculated analytically using the Fokker-Planck method to this point and beyond. However, dynamic micromagnetic effects within the bit can affect and lead to faster switching. Such micromagnetic effects can be addressed via numerical solution of the stochastic Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. However, determining WERs approaching 10$^{-9}$ would require well over 10$^{9}$ such independent simulations, which is infeasible. In this work, we explore calculation of WER using "rare event enhancement" (REE), an approach that has been used for Monte Carlo simulation of other systems where rare events nevertheless remain important. Using a prototype REE approach tailored to the STT-RAM switching physics, we demonstrate reliable calculation of a WER to 10$^{-9}$ with sets of only approximately 10$^{3}$ ongoing stochastic LLGS simulations, and the apparent ability to go further. △ Less

Submitted 28 March, 2016; v1 submitted 28 March, 2016; originally announced March 2016.

Comments: 7 pages, 5 figures

Journal ref: IEEE Transactions on Magnetics, Volume 52, Issue 10, Oct 2016

Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts

Authors: Sarmita Majumder, Samaresh Guchhait, Rik Dey, Leonard Franklin Register, Sanjay K. Banerjee

Abstract: We report magnetoresistance for current flow through iron/topological insulator (Fe/TI) and Fe/evaporated-oxide/TI contacts when a magnetic field is used to initially orient the magnetic alignment of the incorporated ferromagnetic Fe bar, at temperatures ranging from 100 K to room temperature. This magnetoresistance is associated with the relative orientation of the Fe bar magnetization and spin-p… ▽ More We report magnetoresistance for current flow through iron/topological insulator (Fe/TI) and Fe/evaporated-oxide/TI contacts when a magnetic field is used to initially orient the magnetic alignment of the incorporated ferromagnetic Fe bar, at temperatures ranging from 100 K to room temperature. This magnetoresistance is associated with the relative orientation of the Fe bar magnetization and spin-polarization of electrons moving on the surface of the TI with helical spin-momentum locking. The magnitude of the observed magnetoresistance is relatively large compared to that observed in prior work. △ Less

Submitted 23 March, 2016; originally announced March 2016.

Comments: 4 pages, 4 figures, submitted in IEEE Transaction

Voltage-Controlled Low-Energy Switching of Nanomagnets through Ruderman-Kittel-Kasuya-Yosida Interactions for Magnetoelectric Device Applications

Authors: Bahniman Ghosh, Rik Dey, Leonard F. Register, Sanjay K. Banerjee

Abstract: In this letter, we consider through simulation Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between nanomagnets sitting on a conductive surface, and voltage-controlled gating thereof for low-energy switching of nanomagnets for possible memory and nonvolatile logic applications. For specificity, we consider nanomagnets with perpendicular anisotropy on a three-dimensional topological insulator.… ▽ More In this letter, we consider through simulation Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between nanomagnets sitting on a conductive surface, and voltage-controlled gating thereof for low-energy switching of nanomagnets for possible memory and nonvolatile logic applications. For specificity, we consider nanomagnets with perpendicular anisotropy on a three-dimensional topological insulator. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Applications for both memory and nonvolatile logic are considered, with follower, inverter and majority gate functionality shown. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets. △ Less

Submitted 18 March, 2016; originally announced March 2016.

Comments: 6 pages,4 figures

A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems

Authors: Cheng-Chih Hsieh, Anupam Roy, Yao-Feng Chang, Davood Shahrjerdi, Sanjay K. Banerjee

Abstract: Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses. However, the characteristics of the existing memristors do not fully support the key requirements of synaptic connections: high density, adjustable weight, and low… ▽ More Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses. However, the characteristics of the existing memristors do not fully support the key requirements of synaptic connections: high density, adjustable weight, and low energy operation. Here we show a bilayer memristor that is forming-free, low-voltage (~|0.8V|), energy-efficient (full On/Off switching at ~2pJ), and reliable. Furthermore, pulse measurements reveal the analog nature of the memristive device, that is it can be directly programmed to intermediate resistance states. Leveraging this finding, we demonstrate spike-timing-dependent plasticity (STDP), a spike-based Hebbian learning rule4. In those experiments, the memristor exhibits a marked change in the normalized synaptic strength (>30 times) when the pre- and post-synaptic neural spikes overlap. This demonstration is an important step towards the physical construction of high density and high connectivity neural networks. △ Less

Submitted 12 March, 2016; originally announced March 2016.

Comments: 11 pages of main text, 3 pages of supplementary information, 5 figures, submitted for Advanced Materials

Structural and Electrical Properties of MoTe$_2$ and MoSe$_2$ Grown by Molecular Beam Epitaxy

Authors: Anupam Roy, Hema C. P. Movva, Biswarup Satpati, Kyounghwan Kim, Rik Dey, Amritesh Rai, Tanmoy Pramanik, Samaresh Guchhait, Emanuel Tutuc, Sanjay K. Banerjee

Abstract: We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In-situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is e… ▽ More We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In-situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is evident from Raman spectroscopy. Transmission electron microscopy is used to confirm the layered film structure and hexagonal arrangement of surface atoms. Temperature dependent electrical measurements show an insulating behavior which agrees well with a two-dimensional variable-range hop** model, suggesting that transport in these films is dominated by localized charge-carrier states. △ Less

Submitted 9 March, 2016; v1 submitted 8 March, 2016; originally announced March 2016.

Comments: 11 pages, 5 figures + Supporting Information

Journal ref: ACS Appl. Mater. Interfaces, 8 (11), pp 7396-7402 (2016)

Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe$_2$: Landau level degeneracy, effective mass, and negative compressibility

Authors: Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim, Stefano Larentis, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, Emanuel Tutuc

Abstract: We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe$_2$, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall states (QHSs) in high magnetic fields. In both mono and bilayer WSe$_2$, the SdH oscillations and the QHSs occur predominantly at even filling factors, evincing a two-fold Landau level degeneracy. The Fourier transform a… ▽ More We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe$_2$, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall states (QHSs) in high magnetic fields. In both mono and bilayer WSe$_2$, the SdH oscillations and the QHSs occur predominantly at even filling factors, evincing a two-fold Landau level degeneracy. The Fourier transform analysis of the SdH oscillations in bilayer WSe$_2$ reveal the presence of two subbands localized in the top or the bottom layer, as well as negative compressibility. From the temperature dependence of the SdH oscillations we determine a hole effective mass of $0.45m_{0}$ for both mono and bilayer WSe$_2$. △ Less

Submitted 2 February, 2016; originally announced February 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 116, 086601 (2016)

Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators

Authors: Tanuj Trivedi, Sushant Sonde, Hema C. P. Movva, Sanjay K. Banerjee

Abstract: We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO$_2$ and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are… ▽ More We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO$_2$ and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with bulk conduction, in agreement with theoretical models. An extended-WAL model is proposed and utilized in conjunction with a two-channel conduction model to analyze the data, revealing a surface component and evidence of multiple conducting channels. A facile growth method and detailed magnetotransport results indicating BTS as an alternative topological insulator material system are presented. △ Less

Submitted 21 January, 2016; originally announced January 2016.

Comments: To be published in Journal of Applied Physics

Journal ref: J. Appl. Phys. 119, 055706 (2016)

Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films

Authors: Anupam Roy, Samaresh Guchhait, Rik Dey, Tanmoy Pramanik, Cheng-Chih Hsieh, Amritesh Rai, Sanjay K. Banerjee

Abstract: Reflection high energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry and other physical property measurements are used to investigate the structure, morphology, magnetic and magneto-transport properties of (001)-oriented Cr$_2$Te$_3$ thin films grown on Al$_2$O$_3$(0001) and Si(111)-(7$\times$7) surfaces by molecular beam epitaxy (MBE). Streaky RH… ▽ More Reflection high energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry and other physical property measurements are used to investigate the structure, morphology, magnetic and magneto-transport properties of (001)-oriented Cr$_2$Te$_3$ thin films grown on Al$_2$O$_3$(0001) and Si(111)-(7$\times$7) surfaces by molecular beam epitaxy (MBE). Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic having the Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magneto-transport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the $c$-axis. △ Less

Submitted 27 September, 2015; originally announced September 2015.

Comments: 17 pages, 5 figures

Journal ref: ACS Nano, 9, 3772-3779 (2015)

High-Mobility Holes in Dual-Gated WSe$_2$ Field-Effect Transistors

Authors: Hema C. P. Movva, Amritesh Rai, Sangwoo Kang, Kyounghwan Kim, Babak Fallahazad, Takashi Taniguchi, Kenji Watanabe, Emanuel Tutuc, Sanjay K. Banerjee

Abstract: We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device topology with contacts underneath the WSe$_2$ results in $p$-FETs with $I_{ON}$/$I_{OFF}$ ratios exceeding 10$^7$, and contacts that remain Ohmic down to cryogenic tem… ▽ More We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device topology with contacts underneath the WSe$_2$ results in $p$-FETs with $I_{ON}$/$I_{OFF}$ ratios exceeding 10$^7$, and contacts that remain Ohmic down to cryogenic temperatures. The output characteristics show current saturation and gate tunable negative differential resistance. The devices show intrinsic hole mobilities around 140 cm$^2$/Vs at room temperature, and approaching 4,000 cm$^2$/Vs at 2 K. Temperature-dependent transport measurements show a metal-insulator transition, with an insulating phase at low densities, and a metallic phase at high densities. The mobility shows a strong temperature dependence consistent with phonon scattering, and saturates at low temperatures, possibly limited by Coulomb scattering, or defects. △ Less

Submitted 13 September, 2015; originally announced September 2015.

Comments: 18 pages, 5 figures, 7 supporting figures, ACS Nano 2015

Journal ref: ACS Nano, 9 (10), pp 10402-10410 (2015)

Quantum transport simulation of exciton condensate transport physics in a double layer graphene system

Authors: Xuehao Mou, Leonard F. Register, Allan H. MacDonald, Sanjay K. Banerjee

Abstract: Spatially indirect electron-hole exciton condensates stabilized by interlayer Fock exchange interactions have been predicted in systems containing a pair of two-dimensional semiconductor or semimetal layers separated by a thin tunnel dielectric. The layer degree of freedom in these systems can be described as a pseudospin. Condensation is then analogous to ferromagnetism, and the interplay between… ▽ More Spatially indirect electron-hole exciton condensates stabilized by interlayer Fock exchange interactions have been predicted in systems containing a pair of two-dimensional semiconductor or semimetal layers separated by a thin tunnel dielectric. The layer degree of freedom in these systems can be described as a pseudospin. Condensation is then analogous to ferromagnetism, and the interplay between collective and quasiparticle contributions to transport is analogous to phenomena that are heavily studied in spintronics. These phenomena are the basis for pseudospintronic device proposals based on possible low-voltage switching between high (nearly shorted) and low interlayer conductance states and on near perfect Coulomb drag-counterflow current along the layers. In this work, a quantum transport simulator incorporating a non-local Fock exchange interaction is presented, and used to model the essential transport physics in the bilayer graphene system. Finite size effects, Coulomb drag-counterflow current, critical interlayer currents beyond which interlayer DC conductance collapses at sub-thermal voltages, non-local coupling between interlayer critical currents in multiple lead devices, and an Andreev-like reflection process are illustrated. △ Less

Submitted 9 September, 2015; originally announced September 2015.

Comments: 22 pages, 15 figures

Journal ref: Phys. Rev. B 92, 235413 (2015)

Theoretical and experimental investigation of vacancy-based do** of monolayer MoS$_2$ on oxide

Authors: Amithraj Valsaraj, Jiwon Chang, Amritesh Rai, Leonard F. Register, Sanjay K. Banerjee

Abstract: Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we consider MoS$_2$ layers on dielectrics, in particular in this work, the effect of vacancies on the electronic structure. In density-functional based simulations, we consider the effects of near-interface O vacancies in the oxide slab, and Mo or S vacancies in the MoS$_2$ layer. Ba… ▽ More Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we consider MoS$_2$ layers on dielectrics, in particular in this work, the effect of vacancies on the electronic structure. In density-functional based simulations, we consider the effects of near-interface O vacancies in the oxide slab, and Mo or S vacancies in the MoS$_2$ layer. Band structures and atom-projected densities of states for each system and with differing oxide terminations were calculated, as well as those for the defect-free MoS$_2$-dielectrics system and for isolated dielectric layers for reference. Among our results, we find that with O vacancies, both the Hf-terminated HfO$_2$-MoS$_2$ system, and the O-terminated and H-passivated Al$_2$O$_3$-MoS$_2$ systems appear metallic due to do** of the oxide slab followed by electron transfer into the MoS$_2$, in manner analogous to modulation do**. The n-type do** of monolayer MoS$_2$ by high-k oxides with oxygen vacancies then is experimentally demonstrated by electrically and spectroscopically characterizing back-gated monolayer MoS$_2$ field effect transistors encapsulated by oxygen deficient alumina and hafnia. △ Less

Submitted 9 June, 2016; v1 submitted 25 December, 2014; originally announced December 2014.

Comments: Updated author list to reflect journal version

Journal ref: 2D Materials 2, no. 4 (2015): 045009

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

Authors: Babak Fallahazad, Kayoung Lee, Sangwoo Kang, Jiamin Xue, Stefano Larentis, Christopher Corbet, Kyounghwan Kim, Hema C. P. Movva, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Sanjay K. Banerjee, Emanuel Tutuc

Abstract: We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials… ▽ More We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment. △ Less

Submitted 9 December, 2014; originally announced December 2014.

Comments: 26 pages, 6 figures; supporting information includes one figure

Journal ref: Nano Lett. 15, 428 (2015)

Voltage Controlled Magnetic Anisotropy Based Low Energy Switching of a Ferromagnet on a Topological Insulator

Authors: Bahniman Ghosh, Rik Dey, Leonard F. Register, Sanjay K. Banerjee

Abstract: We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular anisotropy, due to MgO deposited on the top surface of Fe. When current is passed on the surface of Bi2Se3, the surface of the Bi2Se3 becomes spin polarized and strong exchange interaction occurs between the d electrons i… ▽ More We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular anisotropy, due to MgO deposited on the top surface of Fe. When current is passed on the surface of Bi2Se3, the surface of the Bi2Se3 becomes spin polarized and strong exchange interaction occurs between the d electrons in the ferromagnet and the electrons conducting the current on the surface of the Bi2Se3. Part of the current is shunted through the ferromagnet which generates spin transfer torque in the ferromagnet. The combination of the spin transfer torque and exchange interaction torque along with voltage-controlled magnetic anisotropy (VCMA) allows ultralow-energy switching of the ferromagnet. We perform micromagnetic simulations and predict switching time of the order of 2.5 ns and switching energy of the order of 0.45fJ for a ferromagnetic bit with thermal stability of 43kBT. Such ultralow-energy and high-speed VCMA-induced switching of a perpendicular anisotropy ferromagnet on a topological insulator could be utilized for energy-efficient memory design. △ Less

Submitted 17 February, 2016; v1 submitted 7 December, 2014; originally announced December 2014.

Comments: This paper has been withdrawn by the author due to some errors in the simulation

Voltage Induced Switching of Nanomagnets in Topological Insulator Magnetoelectric Devices through Ruderman-Kittel-Kasuya-Yosida Interactions

Authors: Bahniman Ghosh, Urmimala Roy, Rik Dey, Tanmoy Pramanik, Leonard F. Register, Sanjay K. Banerjee

Abstract: In this letter, we demonstrate switching of nanomagnets through RKKY interactions in topological insulator-based magnetoelectric devices. The switching speed is dependent on the size of the ferromagnets. In this letter, we demonstrate switching of nanomagnets through RKKY interactions in topological insulator-based magnetoelectric devices. The switching speed is dependent on the size of the ferromagnets. △ Less

Submitted 22 February, 2016; v1 submitted 21 November, 2014; originally announced November 2014.

Comments: This paper has been withdrawn by the author due to some errors in the simulation

Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs

Authors: Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee

Abstract: We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p- channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hop** potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier loweri… ▽ More We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p- channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hop** potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX2 MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX2 MOSFETs. △ Less

Submitted 13 February, 2014; originally announced February 2014.

Comments: Accepted for publication in Journal of Applied Physics

Journal ref: Journal of Applied Physics, 115, 084506 (2014)

Electronic and optical properties of GaSb:N from first principles

Authors: Priyamvada Jadaun, Hari P. Nair, Vincenzo Lordi, Seth R. Bank, Sanjay K. Banerjee

Abstract: GaSb:N displays promise towards realization of optoelectronic devices accessing the mid-infrared wavelength regime. Theoretical and experimental results on its electronic and optical properties are however few. To address this, we present a first principles, density functional theory study using the hybrid HSE06 exchange-correlation functional of GaSb doped with 1.6$\%$ nitrogen. To study dilute-n… ▽ More GaSb:N displays promise towards realization of optoelectronic devices accessing the mid-infrared wavelength regime. Theoretical and experimental results on its electronic and optical properties are however few. To address this, we present a first principles, density functional theory study using the hybrid HSE06 exchange-correlation functional of GaSb doped with 1.6$\%$ nitrogen. To study dilute-nitrides with small band gaps, the local density approximation (LDA) is insufficient and more accurate techniques such as HSE06 are needed. We conduct a comparative study on GaAs:N, also with 1.6$\%$ nitrogen mole fraction, and find that GaSb:N has a smaller band gap and displays more band gap bowing than GaAs:N. In addition we examine the orbital character of the bands, finding the lowest conduction band to be quasi-delocalized, with a large N-$3s$ contribution. At high concentrations, the N atoms interact via the host matrix, forming a dispersive band of their own which governs optoelectronic properties and dominates band gap bowing. While this band drives the optical and electronic properties of GaSb:N, its physics is not captured by traditional models for dilute-nitrides. We thus propose that a complete theory of dilute-nitrides should incorporate orbital character examination, especially at high N concentrations. △ Less

Submitted 5 March, 2014; v1 submitted 1 August, 2013; originally announced August 2013.

Evidence for hydrogen two-level systems in atomic layer deposition oxides

Authors: M. S. Khalil, M. J. A. Stoutimore, S. Gladchenko, A. M. Holder, C. B. Musgrave, A. C. Kozen, G. Rubloff, Y. Q. Liu, R. G. Gordon, J. H. Yum, S. K. Banerjee, C. J. Lobb, K. D. Osborn

Abstract: Two-level system (TLS) defects in dielectrics are known to limit the performance of electronic devices. We study TLS using millikelvin microwave loss measurements of three atomic layer deposited (ALD) oxide films--crystalline BeO ($\rm{c-BeO}$), amorphous $\rm{Al_2O_3}$ ($\rm{a-Al_2O_3}$), and amorphous $\rm{LaAlO_3}$ ($\rm{a-LaAlO_3}$)--and interpret them with room temperature characterization me… ▽ More Two-level system (TLS) defects in dielectrics are known to limit the performance of electronic devices. We study TLS using millikelvin microwave loss measurements of three atomic layer deposited (ALD) oxide films--crystalline BeO ($\rm{c-BeO}$), amorphous $\rm{Al_2O_3}$ ($\rm{a-Al_2O_3}$), and amorphous $\rm{LaAlO_3}$ ($\rm{a-LaAlO_3}$)--and interpret them with room temperature characterization measurements. We find that the bulk loss tangent in the crystalline film is 6 times higher than in the amorphous films. In addition, its power saturation agrees with an amorphous distribution of TLS. Through a comparison of loss tangent data to secondary ion mass spectrometry (SIMS) impurity analysis we find that the dominant loss in all film types is consistent with hydrogen-based TLS. In the amorphous films excess hydrogen is found at the ambient-exposed surface, and we extract the associated hydrogen-based surface loss tangent. Data from films with a factor of 40 difference in carbon impurities revealed that carbon is currently a negligible contributor to TLS loss. △ Less

Submitted 29 July, 2013; originally announced July 2013.

Comments: 11 pages, 4 figures (preprint format)

Journal ref: Appl. Phys. Lett. 103, 162601 (2013)

Atomistic simulation of the electronic states of adatoms in monolayer MoS2

Authors: Jiwon Chang, Stefano Larentis, Emanuel Tutuc, Leonard F. Register, Sanjay K. Banerjee

Abstract: Using an ab initio density functional theory (DFT) based electronic structure method, we study the effects of adatoms on the electronic properties of monolayer transition metal dichalcogenide (TMD) Molybdenum-disulfide (MoS2). We consider the 1st (Li, Na, K) and 7th (F, Cl, Br) column atoms and metals (Sc, Ti, Ta, Mo, Pd, Pt, Ag, Au). Three high symmetry sites for the adatom on the surface of mono… ▽ More Using an ab initio density functional theory (DFT) based electronic structure method, we study the effects of adatoms on the electronic properties of monolayer transition metal dichalcogenide (TMD) Molybdenum-disulfide (MoS2). We consider the 1st (Li, Na, K) and 7th (F, Cl, Br) column atoms and metals (Sc, Ti, Ta, Mo, Pd, Pt, Ag, Au). Three high symmetry sites for the adatom on the surface of monolayer MoS2 are examined as starting points to search for the most energetically stable configuration for each adatom-monolayer MoS2 system, as well as the type of associated bonding. For the most stable adatom positions, we characterize the emergence of adatom-induced electronic states including any dopant states. △ Less

Submitted 26 March, 2014; v1 submitted 30 May, 2013; originally announced May 2013.

Comments: Accepted for publication in Applied Physics Letters

Journal ref: Applied Physics Letters 104, 141603 (2014)

Atomistic Full-Band Simulations of Monolayer MoS2 Transistors

Authors: Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee

Abstract: We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic quantum transport simulations with an atomistic tight-binding Hamiltonian obtained from density functional theory. Our simulations suggest that monolayer MoS2 MOSFETs can provide near-ideal subthreshold slope, and suppression of drain-in… ▽ More We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic quantum transport simulations with an atomistic tight-binding Hamiltonian obtained from density functional theory. Our simulations suggest that monolayer MoS2 MOSFETs can provide near-ideal subthreshold slope, and suppression of drain-induced barrier lowering (DIBL) and gate-induced drain leakage (GIDL). However, these full-band simulations also exhibit limited transconductance. These ballistic simulations also exhibit negative differential resistance (NDR) in the output characteristics associated with the narrow width in energy of the lowest conduction band, but this NDR may be substantially reduced or eliminated by scattering in MoS2. △ Less

Submitted 16 November, 2013; v1 submitted 10 April, 2013; originally announced April 2013.

Comments: Accepted for publication in Applied Physics Letters

Journal ref: Applied Physics Letters 103, 223509 (2013)

Theory and synthesis of bilayer graphene intercalated with ICl and IBr for low power device applications

Authors: Priyamvada Jadaun, Hema C. P. Movva, Leonard F. Register, Sanjay K. Banerjee

Abstract: Graphene intercalation materials are potentially promising for the implementation of the ultra-low power, excitonic-condensate-based Bilayer pseudoSpin Field-Effect Transistor (BiSFET) concept, as well as other novel device concepts requiring a graphene interlayer dielectric. Using density functional theory (DFT) we study the structural and electronic properties of bilayer graphene intercalated wi… ▽ More Graphene intercalation materials are potentially promising for the implementation of the ultra-low power, excitonic-condensate-based Bilayer pseudoSpin Field-Effect Transistor (BiSFET) concept, as well as other novel device concepts requiring a graphene interlayer dielectric. Using density functional theory (DFT) we study the structural and electronic properties of bilayer graphene intercalated with iodine monochloride (ICl) and iodine monobromide (IBr). We determine the structural configuration of ICl and IBr graphene intercalation compounds (GICs). We also conduct an in-depth exploration of inter-layer electronic coupling, using \textit{ab initio} calculations. The presence of intercalants dopes the graphene layer. It also reduces, but does not eliminate, the electronic coupling between graphene layers, which may enable BiSFET operation. In addition, we present experimental results for ICl-GIC synthesis and characterization. △ Less

Submitted 17 January, 2013; originally announced January 2013.

Journal ref: J. Appl. Phys. 114, 063702 (2013)

Topological insulator Bi2Se3 thin films as an alternative channel material in MOSFETs

Authors: Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee

Abstract: Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI thin films. The gap results from interaction of conduction band (CB) and valence band (VB) surface states from the opposite surfaces of a thin film, and its size… ▽ More Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI thin films. The gap results from interaction of conduction band (CB) and valence band (VB) surface states from the opposite surfaces of a thin film, and its size is determined by the film thickness. This gap formation could open the possibility of thin-film TI-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Here we explore the performance of MOSFETs based on TI thin films, specifically Bi2Se3, using quantum ballistic transport simulations with the tight-binding Hamiltonian in the atomic orbital basis. Our simulations indicate that Bi2Se3 MOSFET will be vulnerable to short-channel effects due to the high relative dielectric constant of Bi2Se3(~100)despite its expected excellent electrostatic integrity inherent in a two-dimensional system, and will have other limitations as compared to silicon-based MOSFETs. However, Bi2Se3 MOSFETs, and presumably other TI-based MOSFETs, appear to provide reasonable performance that perhaps could provide novel device opportunities when combined with novel TI properties such as spin-polarized surface states. △ Less

Submitted 19 November, 2012; originally announced November 2012.

Comments: Accepted for publication in Journal of Applied Physics

Journal ref: Journal of Applied Physics, 112, 124511 (2012)

Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

Authors: Hema C. P. Movva, Michael E. Ramón, Chris M. Corbet, Sushant Sonde, Sk. Fahad Chowdhury, Gary Carpenter, Emanuel Tutuc, Sanjay K. Banerjee

Abstract: We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in device electrical characteristics, over undoped devices. The GFETs on Si/SiO$_2$ substrates have high carrier mobilities of up to 6,300 cm$^2$/Vs. Self-al… ▽ More We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in device electrical characteristics, over undoped devices. The GFETs on Si/SiO$_2$ substrates have high carrier mobilities of up to 6,300 cm$^2$/Vs. Self-aligned spin-on-do** is applicable to GFETs on arbitrary substrates, as demonstrated by a 3X enhancement in performance for GFETs on insulating quartz substrates, which are better suited for radio frequency applications. △ Less

Submitted 6 November, 2012; v1 submitted 19 October, 2012; originally announced October 2012.

Comments: 5 pages, 5 figures

Journal ref: Appl. Phys. Lett. 101, 183113 (2012)

Topological Classification of Crystalline Insulators with Point Group Symmetry

Authors: Priyamvada Jadaun, Di Xiao, Qian Niu, Sanjay K. Banerjee

Abstract: We show that in crystalline insulators point group symmetry alone gives rise to a topological classification based on the quantization of electric polarization. Using C3 rotational symmetry as an example, we first prove that the polarization is quantized and can only take three inequivalent values. Therefore, a Z3 topological classification exists. A concrete tight-binding model is derived to demo… ▽ More We show that in crystalline insulators point group symmetry alone gives rise to a topological classification based on the quantization of electric polarization. Using C3 rotational symmetry as an example, we first prove that the polarization is quantized and can only take three inequivalent values. Therefore, a Z3 topological classification exists. A concrete tight-binding model is derived to demonstrate the Z3 topological phase transition. Using first-principles calculations, we identify graphene on BN substrate as a possible candidate to realize the Z3 topological states. To complete our analysis we extend the classification of band structures to all 17 two-dimensional space groups. This work will contribute to a complete theory of symmetry conserved topological phases and also elucidate topological properties of graphene like systems. △ Less

Submitted 7 August, 2012; originally announced August 2012.

Journal ref: Phys. Rev. B 88, 085110 (2013)

Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer

Authors: Li Tao, Milo Holt, Jongho Lee, Harry Chou, Stephen J. McDonnell, Domingo A. Ferrer, Matias Babenco, Robert M. Wallace, Sanjay K. Banerjee, Rodney S. Ruoff, Deji Akinwande

Abstract: Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to crystalline at the growth temperature as corroborated by X-ra… ▽ More Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to crystalline at the growth temperature as corroborated by X-ray diffraction and electron backscatter diffraction. Noticeably, phase transition of copper film is observed on technologically ubiquitous oxidized Si wafer where the oxide is a standard amorphous thermal oxide. Ion mass spectroscopy indicates that the copper films can be purposely hydrogen-enriched during a hydrogen anneal which subsequently affords graphene growth with a sole carbonaceous precursor for low defect densities. Owing to the strong hexagonal lattice match, the graphene domains align to the Cu (111) domains, suggesting a pathway for increasing the graphene grains by maximizing the copper grain sizes. Fabricated graphene transistors on a flexible polyimide film yield a peak carrier mobility ~4,930 cm2/Vs. △ Less

Submitted 7 May, 2012; originally announced May 2012.

Density functional theory studies of interactions of graphene with its environment: substrate, gate dielectric and edge effects

Authors: Priyamvada Jadaun, Bhagawan R. Sahu, Leonard F. Register, Sanjay K. Banerjee

Abstract: This paper reviews the theoretical work undertaken using density functional theory (DFT) to explore graphene's interactions with its surroundings. We look at the impact of substrates, gate dielectrics and edge effects on the properties of graphene. In particular, we focus on graphene-on-quartz and graphene-on-alumina systems, exploring their energy spectrum and charge distribution. Silicon-termina… ▽ More This paper reviews the theoretical work undertaken using density functional theory (DFT) to explore graphene's interactions with its surroundings. We look at the impact of substrates, gate dielectrics and edge effects on the properties of graphene. In particular, we focus on graphene-on-quartz and graphene-on-alumina systems, exploring their energy spectrum and charge distribution. Silicon-terminated quartz is found to not perturb the linear graphene spectrum. On the other hand, oxygen-terminated quartz and both terminations of alumina bond with graphene, leading to the opening of a band gap. Significant charge transfer is seen between the graphene layer and the oxide in the latter cases. Additionally, we review the work of others regarding the effect of various substrates on the electronic properties of graphene. Confining graphene to form nanoribbons also results in the opening of a band gap. The value of the gap is dependent on the edge properties as well as width of the nanoribbon. △ Less

Submitted 31 January, 2012; originally announced February 2012.

Journal ref: Solid State Communications, 152, 1497 (2012)

Direct Measurement of the Fermi Energy in Graphene Using a Double Layer Structure

Authors: Seyoung Kim, Insun Jo, D. C. Dillen, D. A. Ferrer, B. Fallahazad, Z. Yao, S. K. Banerjee, E. Tutuc

Abstract: We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers. We illustrate this method by probing the Fermi energy as a function of density in a graphene monolayer, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacin… ▽ More We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers. We illustrate this method by probing the Fermi energy as a function of density in a graphene monolayer, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacing, and Landau level broadening in graphene. We find that the N=0 Landau level broadening is larger by comparison to the broadening of upper and lower Landau levels. △ Less

Submitted 22 December, 2011; originally announced December 2011.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 108, 116404 (2012)

Dielectric cap** effects on binary and ternary topological insulator surface states

Authors: Jiwon Chang, Priyamvada Jadaun, Leonard F. Register, Sanjay K. Banerjee, Bhagawan Sahu

Abstract: Using a density functional based electronic structure method, we study the effect of crystalline dielectrics on the metallic surface states of Bismuth- and chalcogen-based binary and ternary three dimensional topological insulator (TI) thin films. Crystalline quartz (SiO2) and boron nitride (BN) dielectrics were considered. Crystalline approximation to the amorphous quartz allows to study the effe… ▽ More Using a density functional based electronic structure method, we study the effect of crystalline dielectrics on the metallic surface states of Bismuth- and chalcogen-based binary and ternary three dimensional topological insulator (TI) thin films. Crystalline quartz (SiO2) and boron nitride (BN) dielectrics were considered. Crystalline approximation to the amorphous quartz allows to study the effect of oxygen coverage or environmental effects on the surface states degradation which has gained attention recently in the experimental community. We considered both symmetric and asymmetric dielectric cap**s to the sufaces of TI thin films. Our studies suggest that BN and quartz cap**s have negligible effects on the Dirac cone surface states of both binary and ternary TIs, except in the case of an oxygen-terminated quartz surface. Dangling bond states of oxygens in oxygen-terminated quartz dominate the region close to Fermi level, thereby distorting the TI Dirac cone feature and burying the Dirac point in the quartz valence band region. Passivating the oxygen-terminated surface with atomic hydrogen removes these dangling bond states from the Fermi surface region, and consequently the clear Dirac cone is recovered. Our results are consistent with recent experimental studies of TI surface degradation in the presence of oxygen coverage. △ Less

Submitted 29 September, 2011; originally announced September 2011.

Comments: 11 pages, 15 figures, Accepted for publication in Physical Review B

Journal ref: Phys. Rev. B 84, 155105 (2011)

Density Functional Study of Ternary Topological Insulator Thin Films

Authors: Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee, Bhagawan Sahu

Abstract: Using an ab-initio density functional theory based electronic structure method with a semi-local density approximation, we study thin-film electronic properties of two topological insulators based on ternary compounds of Tl (Thallium) and Bi (Bismuth). We consider TlBiX$_2$ (X=Se, Te) and Bi$_2$$X$_2… ▽ More Using an ab-initio density functional theory based electronic structure method with a semi-local density approximation, we study thin-film electronic properties of two topological insulators based on ternary compounds of Tl (Thallium) and Bi (Bismuth). We consider TlBiX$_2$ (X=Se, Te) and Bi$_2$$X$_2$Y (X,Y= Se,Te) compounds which provide better Dirac cones, compared to the model binary compounds Bi$_2$X$_3$ (X=Se, Te). With this property in combination with a structurally perfect bulk crystal, the latter ternary compound has been found to have improved surface electronic transport in recent experiments. In this article, we discuss the nature of surface states, their locations in the Brillouin zone and their interactions within the bulk region. Our calculations suggest a critical thin film thickness to maintain the Dirac cone which is significantly smaller than that in binary Bi-based compounds. Atomic relaxations or rearrangements are found to affect the Dirac cone in some of these compounds. And with the help of layer-projected surface charge densities, we discuss the penetration depth of the surface states into the bulk region. The electronic spectrum of these ternary compounds agrees very well with the available experimental results. △ Less

Submitted 27 April, 2011; originally announced April 2011.

Comments: 9 pages, 11 figures, 1 table, Accepted for publication in Physical Review B

Journal ref: Phys. Rev B 83, 235108 (2011)

Edge Saturation effects on the magnetism and band gaps in multilayer graphene ribbons and flakes

Authors: Bhagawan Sahu, Hongki Min, Sanjay K. Banerjee

Abstract: Using a density functional theory based electronic structure method and semi-local density approximation, we study the interplay of geometric confinement, magnetism and external electric fields on the electronic structure and the resulting band gaps of multilayer graphene ribbons whose edges are saturated with molecular hydrogen (H$_2$) or hydroxyl (OH) groups. We discuss the similarities and diff… ▽ More Using a density functional theory based electronic structure method and semi-local density approximation, we study the interplay of geometric confinement, magnetism and external electric fields on the electronic structure and the resulting band gaps of multilayer graphene ribbons whose edges are saturated with molecular hydrogen (H$_2$) or hydroxyl (OH) groups. We discuss the similarities and differences of computed features in comparison with the atomic hydrogen (or H-) saturated ribbons and flakes. For H$_2$ edge-saturation, we find \emph{shifted} labeling of three armchair ribbon classes and magnetic to non-magnetic transition in narrow zigzag ribbons whose critical width changes with the number of layers. Other computed characteristics, such as the existence of a critical gap and external electric field behavior, layer dependent electronic structure, stacking-dependent band gap induction and the length confinement effects remain qualitatively same with those of H-saturated ribbons. △ Less

Submitted 21 April, 2011; originally announced April 2011.

Comments: 9 pages, 10 figures, submitted

Journal ref: Phys. Rev. B 84, 075481 (2011)