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Performance of graphene Hall effect sensors: role of bias current, disorder and Fermi velocity
Authors:
Lionel Petit,
Tom Fournier,
Géraldine Ballon,
Cédric Robert,
Delphine Lagarde,
Pascal Puech,
Thomas Blon,
Benjamin Lassagne
Abstract:
Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. He…
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Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. Here we present an advanced model that provides an in-depth understanding of how graphene Hall sensors operate, and demonstrate its ability to quantitatively assess their performance. First, we report the fabrication of sensors with different qualities of graphene, with the best devices achieving magnetic field sensitivities as high as 5000 ohms/T, outperforming the best silicon and narrow-gap semiconductor-based sensors. Then, we examine their performance in detail using the proposed numerical model, which combines Boltzmann formalism, with distinct Fermi levels for electrons and holes, and a new method for the introduction of substrate-induced electron-hole puddles. Importantly, the dependences of magnetic field sensitivity on bias current, disorder, substrate and Hall bar geometry are quantitatively reproduced for the first time. In addition, the model emphasizes that the performance of devices with widths of the order of the charge carrier diffusion length, is significantly affected by the bias current due to the occurrence of large and non-symmetric carrier accumulation and depletion areas near the edges of the Hall bar. The formation of these areas induces a transverse diffusion particle flux capable of counterbalancing the particle flux induced by the Lorentz force when the Hall electric field cancels out in the ambipolar regime. Finally, we discuss how sensor performance can be enhanced by Fermi velocity engineering, paving the way for future ultra-sensitive graphene Hall effect sensors.
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Submitted 17 March, 2024;
originally announced March 2024.
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Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures
Authors:
H. Tornatzky,
C. Robert,
P. Renucci,
B. Han,
T. Blon,
B. Lassagne,
G. Ballon,
Y. Lu,
K. Watanabe,
T. Taniguchi,
B. Urbaszek,
J. M. J. Lopes,
X. Marie
Abstract:
We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni i…
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We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni is saturated perpendicularly to the sample plane, and changes its sign when the magnetization is reversed. The circular polarization decreases when the hBN barrier thickness increases. These results are interpreted in terms of a spin-dependent charge transfer between the MoSe2 monolayer and the Nickel film. The build-up of circular polarization is observed up to 120 K, mainly limited by the trion emission that vanishes with temperature.
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Submitted 25 October, 2021;
originally announced October 2021.
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Dichotomy between Attractive and Repulsive Tomonaga-Luttinger Liquids in Spin Ladders
Authors:
M. Jeong,
D. Schmidiger,
H. Mayaffre,
M. Klanjšek,
C. Berthier,
W. Knafo,
G. Ballon,
B. Vignolle,
S. Krämer,
A. Zheludev,
M. Horvatić
Abstract:
We present two methods to determine whether the interactions in a Tomonaga-Luttinger liquid (TLL) state of a spin-$1/2$ Heisenberg antiferromagnetic ladder are attractive or repulsive. The first method combines two bulk measurements, of magnetization and specific heat, to deduce the TLL parameter that distinguishes between the attraction and repulsion. The second one is based on a local-probe, NMR…
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We present two methods to determine whether the interactions in a Tomonaga-Luttinger liquid (TLL) state of a spin-$1/2$ Heisenberg antiferromagnetic ladder are attractive or repulsive. The first method combines two bulk measurements, of magnetization and specific heat, to deduce the TLL parameter that distinguishes between the attraction and repulsion. The second one is based on a local-probe, NMR measurements of the spin-lattice relaxation. For the strong-leg spin ladder compound $\mathrm{(C_7H_{10}N)_2CuBr_4}$ we find that the isothermal magnetic field dependence of the relaxation rate, $T_1^{-1}(H)$, displays a concave curve between the two critical fields that bound the TLL regime. This is in sharp contrast to the convex curve previously reported for a strong-rung ladder $\mathrm{(C_5H_{12}N)_2CuBr_4}$. Within the TLL description, we show that the concavity directly reflects the attractive interactions, while the convexity reflects the repulsive ones.
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Submitted 16 August, 2016; v1 submitted 18 April, 2016;
originally announced April 2016.
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Field-concentration phase diagram of a quantum spin liquid with bond defects
Authors:
D. Hüvonen,
G. Ballon,
A. Zheludev
Abstract:
The magnetic susceptibility of the gapped quantum spin liquid compound (C$_4$H$_{12}$N$_2$)Cu$_2$Cl$_6$ and its chemically disordered derivatives (C$_4$H$_{12}$N$_2$)Cu$_2$(Cl$_{1-x}$Br$_{x}$)$_6$ are systematically studied in magnetic fields of up to 45 T, as a function of Br concentration. The corresponding field-temperature and field-concentration phase diagrams are determined. Measurements on…
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The magnetic susceptibility of the gapped quantum spin liquid compound (C$_4$H$_{12}$N$_2$)Cu$_2$Cl$_6$ and its chemically disordered derivatives (C$_4$H$_{12}$N$_2$)Cu$_2$(Cl$_{1-x}$Br$_{x}$)$_6$ are systematically studied in magnetic fields of up to 45 T, as a function of Br concentration. The corresponding field-temperature and field-concentration phase diagrams are determined. Measurements on the disorder-free parent compound are not fully consistent with previously published results by other authors [PRL{\bf 96}, 257203 (2006)]. The effect of Br/Cl substitution on the magnetic properties is superficially similar to that of finite temperature. However, important differences are identified and discussed with reference to the previously studied magnetic excitation spectra.
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Submitted 10 July, 2013;
originally announced July 2013.
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High-field irreversible moment reorientation in the antiferromagnet Fe$_{1.1}$Te
Authors:
W. Knafo,
R. Viennois,
G. Ballon,
X. Fabrèges,
F. Duc,
C. Detlefs,
J. Léotin,
E. Giannini
Abstract:
Magnetization measurements have been performed on single-crystalline Fe$_{1.1}$Te in pulsed magnetic fields $\mathbf{H}\perp\mathbf{c}$ up to 53 T and temperatures from 4.2 to 65 K. At $T=4.2$ K, a non-reversible reorientation of the antiferromagnetic moments is observed at $μ_0H_R=48$ T as the pulsed field is on the rise. No anomaly is observed at $H_R$ during the fall of the field and, as long a…
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Magnetization measurements have been performed on single-crystalline Fe$_{1.1}$Te in pulsed magnetic fields $\mathbf{H}\perp\mathbf{c}$ up to 53 T and temperatures from 4.2 to 65 K. At $T=4.2$ K, a non-reversible reorientation of the antiferromagnetic moments is observed at $μ_0H_R=48$ T as the pulsed field is on the rise. No anomaly is observed at $H_R$ during the fall of the field and, as long as the temperature is unchanged, during both rises and falls of additional field pulses. The transition at $H_R$ is reactivated if the sample is warmed up above the Néel temperature $T_N\simeq60$ K and cooled down again. The magnetic field-temperature phase diagram of Fe$_{1.1}$Te in $\mathbf{H}\perp\mathbf{c}$ is also investigated. We present the temperature dependence of $H_R$, as well as that of the antiferromagnetic-to-paramagnetic borderline $H_c$ in temperatures above 40 K.
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Submitted 15 January, 2013; v1 submitted 16 November, 2012;
originally announced November 2012.
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High-field moment polarization in the ferromagnetic superconductor UCoGe
Authors:
W. Knafo,
T. D. Matsuda,
D. Aoki,
F. Hardy,
G. W. Scheerer,
G. Ballon,
M. Nardone,
A. Zitouni,
C. Meingast,
J. Flouquet
Abstract:
We report magnetization and magnetoresistivity measurements on the isostructural ferromagnetic superconductors UCoGe and URhGe in magnetic fields up to 60 T and temperatures from 1.5 to 80 K. At low-temperature, a moment polarization in UCoGe in a field $μ_0\mathbf{H}\parallel\mathbf{b}$ of around 50 T leads to well-defined anomalies in both magnetization and magnetoresistivity. These anomalies va…
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We report magnetization and magnetoresistivity measurements on the isostructural ferromagnetic superconductors UCoGe and URhGe in magnetic fields up to 60 T and temperatures from 1.5 to 80 K. At low-temperature, a moment polarization in UCoGe in a field $μ_0\mathbf{H}\parallel\mathbf{b}$ of around 50 T leads to well-defined anomalies in both magnetization and magnetoresistivity. These anomalies vanish in temperatures higher than 30-40 K, where maxima in the magnetic susceptibility and the field-induced variation of the magnetoresistivity are found. A comparison is made between UCoGe and URhGe, where a moment reorientation in a magnetic field $μ_0\mathbf{H}\parallel\mathbf{b}$ of 12 T leads to field-induced reentrant superconductivity.
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Submitted 12 November, 2012; v1 submitted 6 November, 2012;
originally announced November 2012.
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Interplay of magnetism, Fermi surface reconstructions, and hidden-order in the heavy-fermion material URu$_2$Si$_2$
Authors:
G. W. Scheerer,
W. Knafo,
D. Aoki,
G. Ballon,
A. Mari,
D. Vignolles,
J. Flouquet
Abstract:
URu$_2$Si$_2$ is surely one of the most mysterious of the heavy-fermion compounds. Despite more than twenty years of experimental and theoretical works, the order parameter of the transition at $T_0 = 17.5$ K is still unknown. The state below $T_0$ remains called "hidden-order phase" and the stakes are still to identify the energy scales driving the system to this phase. We present new magnetoresi…
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URu$_2$Si$_2$ is surely one of the most mysterious of the heavy-fermion compounds. Despite more than twenty years of experimental and theoretical works, the order parameter of the transition at $T_0 = 17.5$ K is still unknown. The state below $T_0$ remains called "hidden-order phase" and the stakes are still to identify the energy scales driving the system to this phase. We present new magnetoresistivity and magnetization measurements performed on very-high-quality single crystals in pulsed magnetic fields up to 60 T. We show that the transition to the hidden-order state in URu$_2$Si$_2$ is initially driven by a high-temperature crossover at around 40-50 K, which is a fingerprint of inter-site electronic correlations. In a magnetic field $\mathbf{H}$ applied along the easy-axis $\bf{c}$, the vanishing of this high-temperature scale precedes the polarization of the magnetic moments, as well as it drives the destabilization of the hidden-order phase. Strongly impurity-dependent magnetoresistivity confirms that the Fermi surface is reconstructed below $T_0$ and is strongly modified in a high magnetic field applied along $\mathbf{c}$, i.e. at a sufficiently-high magnetic polarization. The possibility of a sharp crossover in the hidden-order state controlled by a field-induced change of the Fermi surface is pointed out.
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Submitted 17 February, 2012; v1 submitted 18 November, 2011;
originally announced November 2011.