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Selective area epitaxy of in-plane HgTe nanostrcutures on CdTe(001) substrate
Authors:
Nicolas Chaize,
Xavier Baudry,
Pierre-Henri Jouneau,
Eric Gautier,
Jean-Luc Rouvière,
Yves Deblock,
Jimmy Xu,
Maxime Berthe,
Clément Barbot,
Bruno Grandidier,
Ludovic Desplanque,
Hermann Sellier,
Philippe Ballet
Abstract:
Semiconductor nanowires are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique. Here, in-plane HgTe nanostructures are grown thanks to selective area molecular bea…
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Semiconductor nanowires are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique. Here, in-plane HgTe nanostructures are grown thanks to selective area molecular beam epitaxy on a semi-insulating CdTe substrate covered with a patterned SiO$_{\mathrm{2}}$ mask. The shape of these nanostructures is defined by the in-plane orientation of the mask aperture along the <$110$>, <$1\bar{\mathrm{1}}0$>, or <$100$> direction, the deposited thickness, and the growth temperature. Several micron long in-plane nanowires can be achieved as well as more complex nanostructures such as networks, diamond structures or rings. A good selectivity is achieved with very little parasitic growth on the mask even for a growth temperature as low as $140$°C and growth rate up to $0.5$ ML/s. For <$110$> oriented nanowires, the center of the nanostructure exhibits a trapezoidal shape with {$111$}B facets and two grains on the sides, while <$1\bar{\mathrm{1}}0$> oriented nanowires show {$111$}A facets with adatoms accumulation on the sides of the top surface. Transmission electron microscopy observations reveal a continuous epitaxial relation between the CdTe substrate and the HgTe nanowire. Measurements of the resistance with fourpoint scanning tunneling microscopy indicates a good electrical homogeneity along the main NW axis and a thermally activated transport. This growth method paves the way toward the fabrication of complex HgTe-based nanostructures for electronic transport measurements.
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Submitted 11 July, 2024;
originally announced July 2024.
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Gate tunable terahertz cyclotron emission from two-dimensional Dirac fermions
Authors:
B. Benhamou-Bui,
C. Consejo,
S. S. Krishtopenko,
M. Szoła,
K. Maussang,
S. Ruffenach,
E. Chauveau,
S. Benlemqwanssa,
C. Bray,
X. Baudry,
P. Ballet,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii,
B. Jouault,
J. Torres,
F. Teppe
Abstract:
Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like dynamics, their cyclotron mass is strongly dependent on their electron concentration in the quantum well, providing a second tunability lever and paving the wa…
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Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like dynamics, their cyclotron mass is strongly dependent on their electron concentration in the quantum well, providing a second tunability lever and paving the way for a gate-tunable, permanent-magnet Landau laser. In this work, we demonstrate the proof-of-concept of such a back-gate tunable THz cyclotron emitter at fixed magnetic field. The emission frequency detected at 1.5 Tesla is centered on 2.2 THz and can already be electrically tuned over 250 GHz. With an optimized gate and a realistic permanent magnet of 1.0 Tesla, we estimate that the cyclotron emission could be continuously and rapidly tunable by the gate bias between 1 and 3 THz, that is to say on the less covered part of the THz gap.
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Submitted 21 July, 2023;
originally announced July 2023.
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Terahertz cyclotron emission from two-dimensional Dirac fermions
Authors:
S. Gebert,
C. Consejo,
S. S. Krishtopenko,
S. Ruffenach,
M. Szola,
J. Torres,
C. Bray,
B. Jouault,
M. Orlita,
X. Baudry,
P. Ballet,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii,
F. Teppe
Abstract:
Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized…
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Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized graphene, and so far no cyclotron emission from Dirac fermions has been reported. One way to eliminate this last non-radiative process is to sufficiently modify the dispersion of the Landau levels by opening a small gap in the linear band structure. A proven example of such gapped graphene-like materials are HgTe quantum wells close to the topological phase transition. In this work, we experimentally demonstrate Landau emission from Dirac fermions in such HgTe quantum wells, where the emission is tunable by both the magnetic field and the carrier concentration. Consequently, these results represent an advance in the realization of terahertz Landau lasers tunable by magnetic field and gate-voltage.
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Submitted 14 January, 2023;
originally announced January 2023.
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Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control
Authors:
Yu Fu,
**g Li,
Jules Papin,
Paul Noel,
Salvatore Teresi,
Maxen Cosset-Cheneau,
Cecile Grezes,
Thomas Guillet,
Candice Thomas,
Yann-Michel Niquet,
Philippe Ballet,
Tristan Meunier,
Jean-Philippe Attane,
Albert Fert,
Laurent Vila
Abstract:
Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced, bilinear in electric and magnetic fields. Here, w…
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Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced, bilinear in electric and magnetic fields. Here, we report the observation of bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that both the amplitude and sign of this BMR can be tuned by controlling, with an electric gate, the relative proportions of the opposite contributions of opposite surfaces. At magnetic fields of 1 T, the magnetoresistance is of the order of 1 \% and has a larger figure of merit than previously measured TIs. We propose a theoretical model giving a quantitative account of our experimental data. This phenomenon, unique to TI, offers novel opportunities to tune their electrical response for spintronics.
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Submitted 14 February, 2023; v1 submitted 30 November, 2021;
originally announced November 2021.
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Hybrid Modelling in Oncology: Sucesses, Challenges and Hopes
Authors:
Angélique Stéphanou,
Pascal Ballet,
Gibin Powathil
Abstract:
In this review we make the statement that hybrid models in oncology are required as a mean for enhanced data integration. In the context of systems oncology, experimental and clinical data need to be at the heart of the models developments from conception to validation to ensure a relevant use of the models in the clinical context. The main applications pursued are to improve diagnosis and to opti…
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In this review we make the statement that hybrid models in oncology are required as a mean for enhanced data integration. In the context of systems oncology, experimental and clinical data need to be at the heart of the models developments from conception to validation to ensure a relevant use of the models in the clinical context. The main applications pursued are to improve diagnosis and to optimize therapies.We first present the Successes achieved thanks to hybrid modelling approaches to advance knowledge, treatments or drug discovery. Then we present the Challenges than need to be addressed to allow for a better integration of the model parts and of the data into the models. And Finally, the Hopes with a focus towards making personalised medicine a reality. Mathematics Subject Classification. 35Q92, 68U20, 68T05, 92-08, 92B05.
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Submitted 17 January, 2019;
originally announced January 2019.
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Highly efficient spin-to-charge current conversion at room temperature in strained HgTe surface states
Authors:
P. Noël,
C. Thomas,
Y. Fu,
L. Vila,
B. Haas,
P. H. Jouneau,
S. Gambarelli,
T. Meunier,
P. Ballet,
J. P. Attané
Abstract:
We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pum** experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the…
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We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pum** experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the HgTe and NiFe layers. These measurements, associated to the temperature dependence of the resistivity, allows to ascribe these high conversion rates to the spin momentum locking property of HgTe surface states.
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Submitted 17 August, 2017;
originally announced August 2017.
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Revealing topological Dirac fermions at the surface of strained HgTe thin films via Quantum Hall transport spectroscopy
Authors:
C. Thomas,
O. Crauste,
B. Haas,
P. H. Jouneau,
C. Bäuerle,
L. P. Lévy,
E. Orignac,
D. Carpentier,
P. Ballet,
T. Meunier
Abstract:
We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states.…
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We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states. This study provides new insights in the quantum Hall effect of topological insulator (TI) slabs, in the cross-over regime between two- and three-dimensional TIs, and in the relevance of thin TI films to explore novel circuit functionalities in spintronics and quantum nanoelectronics.
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Submitted 28 April, 2017;
originally announced April 2017.
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Topological surface states of strained Mercury-Telluride probed by ARPES
Authors:
Olivier Crauste,
Yoshiyuki Ohtsubo,
Philippe Ballet,
Pierre André Louis Delplace,
David Carpentier,
Clément Bouvier,
Tristan Meunier,
Amina Taleb-Ibrahimi,
Laurent Lévy
Abstract:
The topological surface states of strained HgTe have been measured using high-resolution ARPES measurements. The dispersion of surface states form a Dirac cone, which origin is close to the top of the \ghh band: the top half of the Dirac cone is inside the stress-gap while the bottom half lies within the heavy hole bands and keeps a linear dispersion all the way to the X-point. The circular dichro…
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The topological surface states of strained HgTe have been measured using high-resolution ARPES measurements. The dispersion of surface states form a Dirac cone, which origin is close to the top of the \ghh band: the top half of the Dirac cone is inside the stress-gap while the bottom half lies within the heavy hole bands and keeps a linear dispersion all the way to the X-point. The circular dichroism of the photo-emitted electron intensity has also been measured for all the bands.
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Submitted 8 July, 2013;
originally announced July 2013.
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Strained HgTe: a textbook 3D topological insulator
Authors:
Clément Bouvier,
Tristan Meunier,
Philippe Ballet,
Xavier Baudry,
Roman Bernd Günter Kramer,
Laurent Lévy
Abstract:
Topological insulators can be seen as band-insulators with a conducting surface. The surface carriers are Dirac particles with an energy which increases linearly with momentum. This confers extraordinary transport properties characteristic of Dirac matter, a class of materials which electronic properties are "graphene-like". We show how HgTe, a material known to exhibit 2D spin-Hall effect in thin…
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Topological insulators can be seen as band-insulators with a conducting surface. The surface carriers are Dirac particles with an energy which increases linearly with momentum. This confers extraordinary transport properties characteristic of Dirac matter, a class of materials which electronic properties are "graphene-like". We show how HgTe, a material known to exhibit 2D spin-Hall effect in thin quantum wells,\cite{Konig2007} can be turned into a textbook example of Dirac matter by opening a strain-gap by exploiting the lattice mismatch on CdTe-based substrates. The evidence for Dirac matter found in transport shows up as a divergent Hall angle at low field when the chemical potential coincides with the Dirac point and from the sign of the quantum correction to the conductivity. The material can be engineered at will and is clean (good mobility) and there is little bulk contributions to the conductivity inside the band-gap.
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Submitted 9 December, 2011;
originally announced December 2011.
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A Stochastic Process Approach of the Drake Equation Parameters
Authors:
Nicolas Glade,
Pascal Ballet,
Olivier Bastien
Abstract:
The number N of detectable (i.e. communicating) extraterrestrial civilizations in the Milky Way galaxy is usually done by using the Drake equation. This equation was established in 1961 by Frank Drake and was the first step to quantifying the SETI field. Practically, this equation is rather a simple algebraic expression and its simplistic nature leaves it open to frequent re-expression An addition…
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The number N of detectable (i.e. communicating) extraterrestrial civilizations in the Milky Way galaxy is usually done by using the Drake equation. This equation was established in 1961 by Frank Drake and was the first step to quantifying the SETI field. Practically, this equation is rather a simple algebraic expression and its simplistic nature leaves it open to frequent re-expression An additional problem of the Drake equation is the time-independence of its terms, which for example excludes the effects of the physico-chemical history of the galaxy. Recently, it has been demonstrated that the main shortcoming of the Drake equation is its lack of temporal structure, i.e., it fails to take into account various evolutionary processes. In particular, the Drake equation doesn't provides any error estimation about the measured quantity. Here, we propose a first treatment of these evolutionary aspects by constructing a simple stochastic process which will be able to provide both a temporal structure to the Drake equation (i.e. introduce time in the Drake formula in order to obtain something like N(t)) and a first standard error measure.
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Submitted 7 December, 2011;
originally announced December 2011.
