Showing 1–6 of 6 results for author: Ballesteros, C

Proton radiographs using position-sensitive silicon detectors and high-resolution scintillators

Authors: J. A. Briz, A. N. Nerio, C. Ballesteros, M. J. G. Borge, P. Martínez, A. Perea, V. G. Távora, O. Tengblad, M. Ciemala, A. Maj, P. Olko, W. Parol, A. Pedracka, B. Sowicki, M. Zieblinski, E. Nácher

Abstract: Proton therapy is a cancer treatment technique currently in growth worldwide. It offers advantages with respect to conventional X-ray and $γ$-ray radiotherapy, in particular, a better control of the dose deposition allowing to reach a higher conformity in the treatments. Therefore, it causes less damage to the surrounding healthy tissue and less secondary effects. However, in order to take full ad… ▽ More Proton therapy is a cancer treatment technique currently in growth worldwide. It offers advantages with respect to conventional X-ray and $γ$-ray radiotherapy, in particular, a better control of the dose deposition allowing to reach a higher conformity in the treatments. Therefore, it causes less damage to the surrounding healthy tissue and less secondary effects. However, in order to take full advantage of its potential, improvements in treatment planning and dose verification are required. A new prototype of proton Computed Tomography scanner is proposed to design more accurate and precise treatment plans for proton therapy. Here, results obtained from an experiment performed using a 100-MeV proton beam at the CCB facility in Krakow (Poland) are presented. Proton radiographs of PMMA samples of 50-mm thickness with spatial patterns in aluminum were taken. Their properties were studied, including reproduction of the dimensions, spatial resolution and sensitivity to different materials. They demonstrate the capabilities of the system to produce images with protons. Structures of up to 2 mm are nicely resolved and the sensitivity of the system was enough to distinguish thicknesses of 10 mm of aluminum or PMMA. This constitutes a first step to validate the device as a proton radiography scanner previous to the future tests as a proton CT scanner. △ Less

Submitted 16 November, 2021; originally announced November 2021.

Comments: 7 pages, 11 figures, submitted to IEEE TNS ANIMMA 2021 Conference Proceedings

Monolithic semiconductor hemispherical micro cavities for efficient single photon extraction

Authors: G. C. Ballesteros, C. Bonato, B. D. Gerardot

Abstract: We present a monolithic semiconductor microcavity design for enhanced light-matter interaction and photon extraction efficiency of an embedded quantum emitter such as a quantum dot or color center. The microcavity is a hemispherical Fabry-Perot design consisting of a planar back mirror and a top curved mirror. Higher order modes are suppressed in the structure by reducing the height of the curved… ▽ More We present a monolithic semiconductor microcavity design for enhanced light-matter interaction and photon extraction efficiency of an embedded quantum emitter such as a quantum dot or color center. The microcavity is a hemispherical Fabry-Perot design consisting of a planar back mirror and a top curved mirror. Higher order modes are suppressed in the structure by reducing the height of the curved mirror, leading to efficient photon extraction into a fundamental mode with a Gaussian far-field radiation pattern. The cavity finesse can be varied easily by changing the reflectivity of the mirrors and we consider two specific cases: a low-finesse structure for enhanced broad band photon extraction from self-assembled quantum dots and a moderate-finesse cavity for enhanced extraction of single photons from the zero-phonon line of color centers in diamond. We also consider the impact of structural imperfections on the cavity performance. Finally, we present the fabrication and optical characterisation of monolithic GaAs hemispherical microcavities. △ Less

Submitted 24 May, 2019; originally announced May 2019.

Metaheuristics in Flood Disaster Management and Risk Assessment

Authors: Vena Pearl Bongolan, Florencio C. Ballesteros, Jr., Joyce Anne M. Banting, Aina Marie Q. Olaes, Charlymagne R. Aquino

Abstract: A conceptual area is divided into units or barangays, each was allowed to evolve under a physical constraint. A risk assessment method was then used to identify the flood risk in each community using the following risk factors: the area's urbanized area ratio, literacy rate, mortality rate, poverty incidence, radio/TV penetration, and state of structural and non-structural measures. Vulnerability… ▽ More A conceptual area is divided into units or barangays, each was allowed to evolve under a physical constraint. A risk assessment method was then used to identify the flood risk in each community using the following risk factors: the area's urbanized area ratio, literacy rate, mortality rate, poverty incidence, radio/TV penetration, and state of structural and non-structural measures. Vulnerability is defined as a weighted-sum of these components. A penalty was imposed for reduced vulnerability. Optimization comparison was done with MatLab's Genetic Algorithms and Simulated Annealing; results showed 'extreme' solutions and realistic designs, for simulated annealing and genetic algorithm, respectively. △ Less

Submitted 26 June, 2013; originally announced June 2013.

Comments: UP ICE Centennial Conference Harmonizing Infrastructure with the Environment November 12, 2010 in Manila, Philippines 8th National conference on Information Technology Education (NCITE 2010) October 20-23, 2010 in Boracay, Philippines

Effects of epitaxial strain on the growth mechanism of YBa2Cu3O7-x thin films in [YBa2Cu3O7-x / PrBa2Cu3O7-x] superlattices

Authors: M. Varela, W. Grogger, D. Arias, Z. Sefrioui, C. Leon, L. Vazquez, C. Ballesteros, K. M. Krishnan, J. Santamaria

Abstract: We report on the growth mechanism of YBa2Cu3O7-x (YBCO). Our study is based on the analysis of ultrathin, YBa2Cu3O7-x layers in c-axis oriented YBa2Cu3O7-x / PrBa2Cu3O7-x superlattices. We have found that the release of epitaxial strain in very thin YBCO layers triggers a change in the dimensionality of the growth mode. Ultrathin, epitaxially strained, YBCO layers with thickness below 3 unit cel… ▽ More We report on the growth mechanism of YBa2Cu3O7-x (YBCO). Our study is based on the analysis of ultrathin, YBa2Cu3O7-x layers in c-axis oriented YBa2Cu3O7-x / PrBa2Cu3O7-x superlattices. We have found that the release of epitaxial strain in very thin YBCO layers triggers a change in the dimensionality of the growth mode. Ultrathin, epitaxially strained, YBCO layers with thickness below 3 unit cells grow in a block by block two dimensional mode coherent over large lateral distances. Meanwhile, when thickness increases, and the strain relaxes, layer growth turns into three dimensional, resulting in rougher layers and interfaces. △ Less

Submitted 16 September, 2002; originally announced September 2002.

Comments: 10 pages + 9 figures, accepted in Phys. Rev. B

Journal ref: Phys. Rev. B 66, 174514 (2002)

Direct Correlation between Tc and CuO2 Bilayer Spacing in YBa2Cu3O7-x

Authors: M. Varela, D Arias, Z. Sefrioui, C. Leon, C. Ballesteros, S. J. Pennycook, J. Santamaria

Abstract: We report the effects of epitaxial strain and deoxygenation on high quality [YBa2Cu3O7-x (YBCO)_N / PrBa2Cu3O7 (PBCO)_5] (1000 A thick) superlattices, with 1 <= N <= 12 unit cells. High spatial resolution electron energy loss spectroscopy (EELS) shows that strained, fully oxygenated YBCO layers are underdoped. Irrespective of whether underdo** is induced by strain or deoxygenation, X-ray diffr… ▽ More We report the effects of epitaxial strain and deoxygenation on high quality [YBa2Cu3O7-x (YBCO)_N / PrBa2Cu3O7 (PBCO)_5] (1000 A thick) superlattices, with 1 <= N <= 12 unit cells. High spatial resolution electron energy loss spectroscopy (EELS) shows that strained, fully oxygenated YBCO layers are underdoped. Irrespective of whether underdo** is induced by strain or deoxygenation, X-ray diffraction analysis shows that Tc correlates directly with the separation of the CuO2 bilayers. △ Less

Submitted 29 August, 2002; originally announced August 2002.

Comments: 13 pages + 4 figures accepted in Phys. Rev. B, scheduled 1 Oct 2002

Journal ref: Phys. Rev. B 66, 134517 (2002)

Production of ordered silicon nanocrystals by low-energy ion sputtering

Authors: Raul Gago, Luis Vazquez, Rodolfo Cuerno, Maria Varela, Carmen Ballesteros, Jose M. Albella

Abstract: We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si(100) substrate with 1.2 keV Ar ions at normal incidence. Atomic Force and High-Resolution Transmission Electron microscopies show that the silicon structures are crystalline, display homogeneous height, and spontaneously arrange into short-range hexagonal ordering. Under prolonged irradiat… ▽ More We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si(100) substrate with 1.2 keV Ar ions at normal incidence. Atomic Force and High-Resolution Transmission Electron microscopies show that the silicon structures are crystalline, display homogeneous height, and spontaneously arrange into short-range hexagonal ordering. Under prolonged irradiation (up to 16 hours) all dot characteristics remain largely unchanged and a small corrugation develops at long wavelengths. We interpret the formation of the dots as a result of an instability due to the sputtering yield dependence on the local surface curvature △ Less

Submitted 26 June, 2001; originally announced June 2001.

Comments: 4 two-column pages (revtex4), 3 figures (higher quality copies in the printed jrnl. version)

Journal ref: Applied Physics Letters 78, 3316-3318 (2001)