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Showing 1–3 of 3 results for author: Balasubramaniam, K R

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  1. arXiv:2401.02648  [pdf, other

    physics.comp-ph cond-mat.mtrl-sci

    Carrier Selectivity and Passivation at the Group V elemental 2D Material--Si Interface of a PV Device

    Authors: Gurudayal Behera, K. R. Balasubramaniam, Aftab Alam

    Abstract: This study investigates the interfacial characteristics relevant to photovoltaic (PV) devices of the Group--V elemental 2D layers with Si. The surface passivation and carrier selectivity of the interface between $α$ and $β$ allotropes of arsenene, antimonene, and bismuthene monolayers with Si (100) and Si(111) were estimated \emph{via} first--principles calculations. Amongst the various interface… ▽ More

    Submitted 5 January, 2024; originally announced January 2024.

  2. arXiv:2312.16063  [pdf, other

    cond-mat.mtrl-sci

    Ternary Alkali Metal Copper Chalcogenides ACuX (A= Na, K and X= S, Se, Te): Promising Candidate for Solar Harvesting Applications

    Authors: Gurudayal Behera, Surabhi Suresh Nair, Nirpendra Singh, K. R. Balasubramaniam, Aftab Alam

    Abstract: We report a comprehensive first-principles study of the relative stability of the various possible crystal structures, and the electronic and optical properties of ternary alkali metal chalcogenides ACuX (A= Na/K and X= S/Se/Te) compounds through density functional theory (DFT) calculations. The energetics and phonon spectra of greater than 700 structures were compared, and seven possible stabiliz… ▽ More

    Submitted 26 December, 2023; originally announced December 2023.

  3. Crystal structure, stability and optoelectronic properties of the organic-inorganic wide bandgap perovskite CH3NH3BaI3: Candidate for transparent conductor applications

    Authors: Akash Kumar, K. R. Balasubramaniam, Jiban Kangsabanik, Vikram, Aftab Alam

    Abstract: Structural stability, electronic structure and optical properties of CH3NH3BaI3 hybrid perovskite is examined both from theory as well as experiment. Solution-processed thin films of CH3NH3BaI3 exhibited a high band gap of approximately 3.87 eV, which is in excellent agreement with the theoretical estimate of 4 eV. Also, the XRD patterns of the thin films match well with the l-peaks of the simulat… ▽ More

    Submitted 28 September, 2016; v1 submitted 27 April, 2016; originally announced April 2016.

    Comments: 5 figures, 1 table

    Journal ref: Phys. Rev. B 94, 180105 (2016)