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Showing 1–5 of 5 results for author: Balashov, D V

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  1. An Optimal Tunable Josephson Element for Quantum Computing

    Authors: F. Chiarello, M. G. Castellano, G. Torrioli, S. Poletto, C. Cosmelli, P. Carelli, D. V. Balashov, M. I. Khabipov, A. B. Zorin

    Abstract: We introduce a three-junction SQUID that can be effectively used as an optimal tunable element in Josephson quantum computing applications. This device can replace the simple dc SQUID generally used as tunable element in this kind of applications, with a series of advantages for the coherence time and for the tolerance to small errors. We study the device both theoretically and experimentally at… ▽ More

    Submitted 13 May, 2008; v1 submitted 7 May, 2008; originally announced May 2008.

    Comments: 3 pages, 4 figures

    Journal ref: F. Chiarello, M. G. Castellano, G. Torrioli, S. Poletto, C. Cosmelli, P. Carelli, D. V. Balashov, M. I. Khabipov, e A. B. Zorin, Appl. Phys. Lett. 93, 042504-3 (2008)

  2. Single flux quantum circuits with dam** based on dissipative transmission lines

    Authors: E. M. Tolkacheva, D. V. Balashov, M. I. Khabipov, A. B. Zorin

    Abstract: We propose and demonstrate the functioning of a special Rapid Single Flux Quantum (RSFQ) circuit with frequency-dependent dam**. This dam** is achieved by shunting individual Josephson junctions by pieces of open-ended RC transmission lines. Our circuit includes a toggle flip-flop cell, Josephson transmission lines transferring single flux quantum pulses to and from this cell, as well as DC/… ▽ More

    Submitted 3 April, 2008; originally announced April 2008.

    Comments: 6 pages incl. 6 figures

    Journal ref: Supercond. Sci. Technol. v. 21 (2008) 125010

  3. arXiv:cond-mat/0605532  [pdf, ps, other

    cond-mat.mes-hall cond-mat.supr-con

    Self-shunted Al/AlOx/Al Josephson junctions

    Authors: S. V. Lotkhov, E. M. Tolkacheva, D. V. Balashov, M. I. Khabipov, F. -I. Buchholz, A. B. Zorin

    Abstract: Self-shunted aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T=25 mK. Due to high junction transparency, the IV-characteristics were found to be of only small hysteresis with retrap**-to-switching current ratio of up to 80%. The observed critical currents were close to the Ambegaokar-Baratoff… ▽ More

    Submitted 22 May, 2006; originally announced May 2006.

    Comments: 3 pages; 2 figures

  4. arXiv:cond-mat/0605237  [pdf, ps, other

    cond-mat.mes-hall cond-mat.supr-con

    Subgap conductivity in SIN-junctions of high barrier transparency

    Authors: S. V. Lotkhov, D. V. Balashov, M. I. Khabipov, F. -I. Buchholz, A. B. Zorin

    Abstract: We investigate the current-voltage characteristics of high-transparency superconductor-insulator-normal metal (SIN) junctions with the specific tunnel resistance below 30 kOhm per square micron. The junctions were fabricated from different superconducting and normal conducting materials, including Nb, Al, AuPd and Cu. The subgap leakage currents were found to be appreciably larger than those giv… ▽ More

    Submitted 10 May, 2006; v1 submitted 9 May, 2006; originally announced May 2006.

    Comments: 6 pages, 5 figures, 1 table

  5. arXiv:cond-mat/0411607  [pdf, ps, other

    cond-mat.supr-con

    Josephson tunnel junctions with nonlinear dam** for RSFQ-qubit circuit applications

    Authors: A. B. Zorin, M. I. Khabipov, D. V. Balashov, R. Dolata, F. -I. Buchholz, J. Niemeyer

    Abstract: We demonstrate that shunting of Superconductor-Insulator-Superconductor Josephson junctions by Superconductor-Insulator-Normal metal (S-I-N) structures having pronounced non-linear I-V characteristics can remarkably modify the Josephson dynamics. In the regime of Josephson generation the phase behaves as an overdamped coordinate, while in the superconducting state the dam** and current noise a… ▽ More

    Submitted 24 November, 2004; originally announced November 2004.

    Comments: 4 pages incl. 3 figures

    Journal ref: Appl. Phys. Lett. v.86, 032501 (2005)