Showing 51–100 of 118 results for author: Bakkers, E P A M

Spin transport in ferromagnet-InSb nanowire quantum devices

Authors: Zedong Yang, Brett Heischmidt, Sasa Gazibegovic, Ghada Badawy, Diana Car, Paul A. Crowell, Erik P. A. M. Bakkers, Vlad S. Pribiag

Abstract: Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spi… ▽ More Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spin degeneracy, which is realized by applying a magnetic field to induce a helical gap. However, the applied field can adversely impact the induced superconducting state in the NWs and also places geometric restrictions on the device, which can affect scaling of future MZM-based quantum registers. These challenges could be circumvented by integrating magnetic elements with the NWs. With this motivation, in this work we report the first experimental investigation of spin transport across InSb NWs, which are enabled by devices with ferromagnetic (FM) contacts. We observe signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and also reveals a transport regime where the device acts as a spin filter. These results open an avenue towards develo** MZM devices in which spin degeneracy is lifted locally, without the need of an applied magnetic field. They also provide a path for realizing spin-based devices that leverage spin-orbital states in quantum wires. △ Less

Submitted 16 September, 2019; originally announced September 2019.

Comments: 30 pages, 12 figures

Journal ref: Nano Letters 20, 3232 (2020)

Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction

Authors: Joost Ridderbos, Matthias Brauns, Ang Li, Erik P. A. M. Bakkers, Alexander Brinkman, Wilfred G. van der Wiel, Floris A. Zwanenburg

Abstract: We present a Josephson junction based on a Ge-Si core-shell nanowire with transparent superconducting Al contacts, a building block which could be of considerable interest for investigating Majorana bound states, superconducting qubits and Andreev (spin) qubits. We demonstrate the dc Josephson effect in the form of a finite supercurrent through the junction, and establish the ac Josephson effect b… ▽ More We present a Josephson junction based on a Ge-Si core-shell nanowire with transparent superconducting Al contacts, a building block which could be of considerable interest for investigating Majorana bound states, superconducting qubits and Andreev (spin) qubits. We demonstrate the dc Josephson effect in the form of a finite supercurrent through the junction, and establish the ac Josephson effect by showing up to 23 Shapiro steps. We observe multiple Andreev reflections up to the sixth order, indicating that charges can scatter elastically many times inside our junction, and that our interfaces between superconductor and semiconductor are transparent and have low disorder. △ Less

Submitted 20 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. Materials 3, 084803 (2019)

Hard superconducting gap and diffusion-induced superconductors in Ge-Si nanowires

Authors: Joost Ridderbos, Matthias Brauns, Jie Shen, Folkert K. de Vries, Ang Li, Sebastian Kölling, Marcel A. Verheijen, Alexander Brinkman, Wilfred G. van der Wiel, Erik P. A. M. Bakkers, Floris A. Zwanenburg

Abstract: We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at… ▽ More We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at $180$ $^\circ$C during which aluminium inter-diffuses and replaces the germanium in a section of the nanowire. Next to Al, we find a superconductor with lower critical temperature ($T_\mathrm{C}=0.9$ K) and a higher critical field ($B_\mathrm{C}=0.9-1.2$ T). We can therefore selectively switch either superconductor to the normal state by tuning the temperature and the magnetic field and observe that the additional superconductor induces a proximity supercurrent in the semiconducting part of the nanowire even when the Al is in the normal state. In another device where the diffusion of Al rendered the nanowire completely metallic, a superconductor with a much higher critical temperature ($T_\mathrm{C}=2.9$ K) and critical field ($B_\mathrm{C}=3.4$ T) is found. The small size of diffusion-induced superconductors inside nanowires may be of special interest for applications requiring high magnetic fields in arbitrary direction. △ Less

Submitted 20 December, 2019; v1 submitted 11 July, 2019; originally announced July 2019.

Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires

Authors: Simone Assali, Roberto Bergamaschini, Emilio Scalise, Marcel A. Verheijen, Marco Albani, Alain Dijkstra, Ang Li, Sebastian Koelling, Erik P. A. M. Bakkers, Francesco Montalenti, Leo Miglio

Abstract: The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and composition of Ge/GeSn core/shell nanowires by correlating the experimental observations with a theoretical interpretation based on a multi-scale approach. We show tha… ▽ More The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and composition of Ge/GeSn core/shell nanowires by correlating the experimental observations with a theoretical interpretation based on a multi-scale approach. We show that the cross-sectional morphology of Ge/GeSn core/shell nanowires changes from hexagonal to dodecagonal upon increasing the supply of the Sn precursor. This transformation strongly influences the Sn distribution as a higher Sn content is measured under the {112} growth front. Ab-initio DFT calculations provide an atomic-scale explanation by showing that Sn incorporation is favored at the {112} surfaces, where the Ge bonds are tensile-strained. A phase-field continuum model was developed to reproduce the morphological transformation and the Sn distribution within the wire, shedding light on the complex growth mechanism and unveiling the relation between segregation and faceting. The tunability of the photoluminescence emission with the change in composition and morphology of the GeSn shell highlights the potential of the core/shell nanowire system for opto-electronic devices operating at mid-infrared wavelengths. △ Less

Submitted 16 January, 2020; v1 submitted 27 June, 2019; originally announced June 2019.

Crossed Andreev Reflection in InSb Flake Josephson Junctions

Authors: Folkert K. de Vries, Martijn L. Sol, Sasa Gazibegovic, Roy L. M. op het Veld, Stijn C. Balk, Diana Car, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Jie Shen

Abstract: We study superconducting quantum interference in InSb flake Josephson junctions. An even-odd effect in the amplitude and periodicity of the superconducting quantum interference pattern is found. Interestingly, the occurrence of this pattern coincides with enhanced conduction at both edges of the flake, as is deduced from measuring a SQUID pattern at reduced gate voltages. We identify the specific… ▽ More We study superconducting quantum interference in InSb flake Josephson junctions. An even-odd effect in the amplitude and periodicity of the superconducting quantum interference pattern is found. Interestingly, the occurrence of this pattern coincides with enhanced conduction at both edges of the flake, as is deduced from measuring a SQUID pattern at reduced gate voltages. We identify the specific crystal facet of the edge with enhanced conduction, and confirm this by measuring multiple devices. Furthermore, we argue the even-odd effect is due to crossed Andreev reflection, a process where a Cooper pair splits up over the two edges and recombines at the opposite contact. An entirely $h/e$ periodic SQUID pattern, as well as the observation of both even-odd and odd-even effects, corroborates this conclusion. Crossed Andreev reflection could be harnessed for creating a topological state of matter or performing experiments on the non-local spin-entanglement of spatially separated Cooper pairs. △ Less

Submitted 14 June, 2019; v1 submitted 13 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. Research 1, 032031 (2019)

Strain engineering in Ge/GeSn core/shell nanowires

Authors: Simone Assali, Marco Albani, Roberto Bergamaschini, Marcel A. Verheijen, Ang Li, Sebastian Kölling, Luca Gagliano, Erik P. A. M. Bakkers, Leo Miglio

Abstract: Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell nanowire geometry. Incorporation of Sn content in the 10-20 at.% range is achieved with Ge core diameters ranging from 50nm to 100nm. While the smaller cores lead to… ▽ More Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell nanowire geometry. Incorporation of Sn content in the 10-20 at.% range is achieved with Ge core diameters ranging from 50nm to 100nm. While the smaller cores lead to the formation of a regular and homogeneous GeSn shell, larger cores lead to the formation of multi-faceted sidewalls and broadened segregation domains, inducing the nucleation of defects. This behavior is rationalized in terms of the different residual strain, as obtained by realistic finite element method simulations. The extended analysis of the strain relaxation as a function of core and shell sizes, in comparison with the conventional planar geometry, provides a deeper understanding of the role of strain in the epitaxy of metastable GeSn semiconductors. △ Less

Submitted 29 May, 2019; originally announced May 2019.

Engineering tunnel junctions on ballistic semiconductor nanowires

Authors: J. Damasco, S. T. Gill, S. Gazibegovic, G. Badawy, E. P. A. M. Bakkers, N. Mason

Abstract: Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockade. However, creating nanoscale tunnel junctions allows one to directly measure other properties such as the density of states or electronic energy distribution functions. In this paper, we demonstrate how to realize uniform tunnel junctions on InSb… ▽ More Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockade. However, creating nanoscale tunnel junctions allows one to directly measure other properties such as the density of states or electronic energy distribution functions. In this paper, we demonstrate how to realize uniform tunnel junctions on InSb nanowires, where the low invasiveness preserves ballistic transport in the nanowires. The utility of the tunnel junctions is demonstrated via measurements using a superconducting tunneling probe, which reveal non-equilibrium properties in the open quantum dot regime of an InSb nanowire. The method for high-quality tunnel junction fabrication on InSb nanowires is applicable to other III-V nanowires and allows for new tools to characterize the local density of states. △ Less

Submitted 30 April, 2019; originally announced April 2019.

Journal ref: Appl. Phys. Lett. 115, 043503 (2019)

Erasing odd-parity states in semiconductor quantum dots coupled to superconductors

Authors: Z. Su, R. Zitko, P. Zhang, H. Wu, D. Car, S. R. Plissard, S. Gazibegovic, G. H. A. Badawy, M. Hocevar, J. Chen, E. P. A. M. Bakkers, S. M. Frolov

Abstract: Quantum dots are gate-defined within InSb nanowires, in proximity to NbTiN superconducting contacts. As the coupling between the dot and the superconductor is increased, the odd-parity occupations become non-discernible (erased) both above and below the induced superconducting gap. Above the gap, conductance in the odd Coulomb valleys increases until the valleys are lifted. Below the gap, Andreev… ▽ More Quantum dots are gate-defined within InSb nanowires, in proximity to NbTiN superconducting contacts. As the coupling between the dot and the superconductor is increased, the odd-parity occupations become non-discernible (erased) both above and below the induced superconducting gap. Above the gap, conductance in the odd Coulomb valleys increases until the valleys are lifted. Below the gap, Andreev bound states undergo quantum phase transitions to singlet ground states at odd occupancy. We observe that the apparent erasure of odd-parity regimes coincides at low-bias and at high-bias. This observation is reproduced in numerical renormalization group simulations, and is explained qualitatively by a competition between Kondo temperature and the induced superconducting gap. In the erased odd-parity regime, the quantum dot exhibits transport features similar to a finite-size Majorana nanowire, drawing parallels between even-odd dot occupations and even-odd one-dimensional subband occupations. △ Less

Submitted 10 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 101, 235315 (2020)

Josephson effect in a few-hole quantum dot

Authors: Joost Ridderbos, Matthias Brauns, Jie Shen, Folkert K. de Vries, Ang Li, Erik P. A. M. Bakkers, Alexander Brinkman, Floris A. Zwanenburg

Abstract: We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a single device: In the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion supercurrent is… ▽ More We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a single device: In the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge-Si nanowires as an important platform for hybrid superconductor-semiconductor physics and Majorana fermions. △ Less

Submitted 22 September, 2018; originally announced September 2018.

Journal ref: Adv. Mater. 2018, 1802257

Magnetic field resilient superconducting coplanar waveguide resonators for hybrid cQED experiments

Authors: J. G. Kroll, F. Borsoi, K. L. van der Enden, W. Uilhoorn, D. de Jong, M Quintero-Pérez, D. J. van Woerkom, A. Bruno, S. R. Plissard, D. Car, E. P. A. M. Bakkers, M. C. Cassidy, L. P. Kouwenhoven

Abstract: Superconducting coplanar waveguide resonators that can operate in strong magnetic fields are important tools for a variety of high frequency superconducting devices. Magnetic fields degrade resonator performance by creating Abrikosov vortices that cause resistive losses and frequency fluctuations, or suppressing superconductivity entirely. To mitigate these effects we investigate lithographically… ▽ More Superconducting coplanar waveguide resonators that can operate in strong magnetic fields are important tools for a variety of high frequency superconducting devices. Magnetic fields degrade resonator performance by creating Abrikosov vortices that cause resistive losses and frequency fluctuations, or suppressing superconductivity entirely. To mitigate these effects we investigate lithographically defined artificial defects in resonators fabricated from NbTiN superconducting films. We show that by controlling the vortex dynamics the quality factor of resonators in perpendicular magnetic fields can be greatly enhanced. Coupled with the restriction of the device geometry to enhance the superconductors critical field, we demonstrate stable resonances that retain quality factors $\simeq 10^5$ at the single photon power level in perpendicular magnetic fields up to $B_\perp \simeq$ 20 mT and parallel magnetic fields up to $B_\parallel \simeq$ 6 T. We demonstrate the effectiveness of this technique for hybrid systems by integrating an InSb nanowire into a field resilient superconducting resonator, and use it to perform fast charge readout of a gate defined double quantum dot at $B_\parallel =$ 1 T. △ Less

Submitted 11 September, 2018; originally announced September 2018.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Applied 11, 064053 (2019)

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces

Authors: Joon Sue Lee, Sukgeun Choi, Mihir Pendharkar, Dan J. Pennachio, Brian Markman, Micheal Seas, Sebastian Koelling, Marcel A. Verheijen, Lucas Casparis, Karl D. Petersson, Ivana Petkovic, Vanessa Schaller, Mark J. W. Rodwell, Charles M. Marcus, Peter Krogstrup, Leo P. Kouwenhoven, Erik P. A. M. Bakkers, Chris J. Palmstrøm

Abstract: We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientat… ▽ More We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1-D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies. △ Less

Submitted 14 March, 2019; v1 submitted 14 August, 2018; originally announced August 2018.

Journal ref: Phys. Rev. Materials 3, 084606 (2019)

Spin-Orbit Protection of Induced Superconductivity in Majorana Nanowires

Authors: Jouri D. S. Bommer, Hao Zhang, Önder Gül, Bas Nijholt, Michael Wimmer, Filipp N. Rybakov, Julien Garaud, Donjan Rodic, Egor Babaev, Matthias Troyer, Diana Car, Sébastien R. Plissard, Erik P. A. M. Bakkers, Kenji Watanabe, Takashi Taniguchi, Leo P. Kouwenhoven

Abstract: Spin-orbit interaction (SOI) plays a key role in creating Majorana zero modes in semiconductor nanowires proximity coupled to a superconductor. We track the evolution of the induced superconducting gap in InSb nanowires coupled to a NbTiN superconductor in a large range of magnetic field strengths and orientations. Based on realistic simulations of our devices, we reveal SOI with a strength of 0.1… ▽ More Spin-orbit interaction (SOI) plays a key role in creating Majorana zero modes in semiconductor nanowires proximity coupled to a superconductor. We track the evolution of the induced superconducting gap in InSb nanowires coupled to a NbTiN superconductor in a large range of magnetic field strengths and orientations. Based on realistic simulations of our devices, we reveal SOI with a strength of 0.15-0.35 eV$\require{mediawiki-texvc}Å$. Our approach identifies the direction of the spin-orbit field, which is strongly affected by the superconductor geometry and electrostatic gates. △ Less

Submitted 10 May, 2019; v1 submitted 5 July, 2018; originally announced July 2018.

Comments: 7 pages, 4 figures. Supplemental Material as ancillary file

Journal ref: Phys. Rev. Lett. 122, 187702 (2019)

Spin-orbit interaction and induced superconductivity in an one-dimensional hole gas

Authors: F. K. de Vries, J. Shen, R. J. Skolasinski, M. P. Nowak, D. Varjas, L. Wang, M. Wimmer, J. Ridderbos, F. A. Zwanenburg, A. Li, S. Koelling, M. A. Verheijen, E. P. A. M. Bakkers, L. P. Kouwenhoven

Abstract: Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted much interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are directly related to the topological protection of the predicted Majorana bound states. Here we explore the one-dimensional hole gas in germanium silicon (Ge-Si) co… ▽ More Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted much interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are directly related to the topological protection of the predicted Majorana bound states. Here we explore the one-dimensional hole gas in germanium silicon (Ge-Si) core-shell nanowires (NWs) as a new material candidate for creating a topological superconductor. Fitting multiple Andreev reflection measurements shows that the NW has two transport channels only, underlining its one-dimensionality. Furthermore, we find anisotropy of the Lande g-factor, that, combined with band structure calculations, provides us qualitative evidence for direct Rashba SOI and a strong orbital effect of the magnetic field. Finally, a hard superconducting gap is found in the tunneling regime, and the open regime, where we use the Kondo peak as a new tool to gauge the quality of the superconducting gap. △ Less

Submitted 21 July, 2018; v1 submitted 5 June, 2018; originally announced June 2018.

Journal ref: Nanoletters 2018

Electric field tunable superconductor-semiconductor coupling in Majorana nanowires

Authors: Michiel W. A. de Moor, Jouri D. S. Bommer, Di Xu, Georg W. Winkler, Andrey E. Antipov, Arno Bargerbos, Guanzhong Wang, Nick van Loo, Roy L. M. Op het Veld, Sasa Gazibegovic, Diana Car, John A. Logan, Mihir Pendharkar, Joon Sue Lee, Erik P. A. M. Bakkers, Chris J. Palmstrøm, Roman M. Lutchyn, Leo P. Kouwenhoven, Hao Zhang

Abstract: We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced electric fields can greatly modify the coupling strength, which has consequences for the proximity induced superconducting gap, effective g-factor, and sp… ▽ More We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced electric fields can greatly modify the coupling strength, which has consequences for the proximity induced superconducting gap, effective g-factor, and spin-orbit coupling, which all play a key role in understanding Majorana physics. We further show that level repulsion due to spin-orbit coupling in a finite size system can lead to seemingly stable zero bias conductance peaks, which mimic the behavior of Majorana zero modes. Our results improve the understanding of realistic Majorana nanowire systems. △ Less

Submitted 4 June, 2018; originally announced June 2018.

Comments: 10 pages, 5 figures, supplemental information as ancillary file

Journal ref: 2018 New J. Phys. 20 103049

Mirage Andreev spectra generated by mesoscopic leads in nanowire quantum dots

Authors: Z. Su, A. Zarassi, J. -F. Hsu, P. San-Jose, E. Prada, R. Aguado, E. J. H. Lee, S. Gazibegovic, R. Op het Veld, D. Car, S. R. Plissard, M. Hocevar, M. Pendharkar, J. S. Lee, J. A. Logan, C. J. Palmstrom, E. P. A. M. Bakkers, S. M. Frolov

Abstract: We study transport mediated by Andreev bound states formed in InSb nanowire quantum dots. Two kinds of superconducting source and drain contacts are used: epitaxial Al/InSb devices exhibit a doubling of tunneling resonances, while in NbTiN/InSb devices Andreev spectra of the dot appear to be replicated multiple times at increasing source-drain bias voltages. In both devices, a mirage of a crowded… ▽ More We study transport mediated by Andreev bound states formed in InSb nanowire quantum dots. Two kinds of superconducting source and drain contacts are used: epitaxial Al/InSb devices exhibit a doubling of tunneling resonances, while in NbTiN/InSb devices Andreev spectra of the dot appear to be replicated multiple times at increasing source-drain bias voltages. In both devices, a mirage of a crowded spectrum is created. To describe the observations a model is developed that combines the effects of a soft induced gap and of additional Andreev bound states both in the quantum dot and in the finite regions of the nanowire adjacent to the quantum dot. Understanding of Andreev spectroscopy is important for the correct interpretation of Majorana experiments done on the same structures. △ Less

Submitted 11 May, 2018; originally announced May 2018.

Journal ref: Phys. Rev. Lett. 121, 127705 (2018)

Single, double, and triple quantum dots in Ge/Si nanowires

Authors: F. N. M. Froning, M. K. Rehmann, J. Ridderbos, M. Brauns, F. A. Zwanenburg, A. Li, E. P. A. M. Bakkers, D. M. Zumbühl, F. R. Braakman

Abstract: We report highly tunable control of holes in Ge/Si core/shell nanowires (NWs). We demonstrate the ability to create single quantum dots (QDs) of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quant… ▽ More We report highly tunable control of holes in Ge/Si core/shell nanowires (NWs). We demonstrate the ability to create single quantum dots (QDs) of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration we observe Pauli spin blockade (PSB). These results open the way to perform hole spin qubit experiments in these devices. △ Less

Submitted 7 May, 2018; originally announced May 2018.

Journal ref: Appl. Phys. Lett. 113, 073102 (Aug 15, 2018)

Parity transitions in the superconducting ground state of hybrid InSb-Al Coulomb islands

Authors: Jie Shen, Sebastian Heedt, Francesco Borsoi, Bernard Van Heck, Sasa Gazibegovic, Roy L. M. Op het Veld, Diana Car, John A. Logan, Mihir Pendharkar, Senja J. J. Ramakers, Guanzhong Wang, Di Xu, Daniel Bouman, Attila Geresdi, Chris J. Palmstrom, Erik P. A. M. Bakkers, Leo P. Kouwenhoven

Abstract: The number of electrons in small metallic or semiconducting islands is quantized. When tunnelling is enabled via opaque barriers this number can change by an integer. In superconductors the addition is in units of two electron charges (2e), reflecting that the Cooper pair condensate must have an even parity. This ground state (GS) is foundational for all superconducting qubit devices. Here, we stu… ▽ More The number of electrons in small metallic or semiconducting islands is quantized. When tunnelling is enabled via opaque barriers this number can change by an integer. In superconductors the addition is in units of two electron charges (2e), reflecting that the Cooper pair condensate must have an even parity. This ground state (GS) is foundational for all superconducting qubit devices. Here, we study a hybrid superconducting-semiconducting island and find three typical GS evolutions in a parallel magnetic field: a robust 2e-periodic even-parity GS, a transition to a 2e-periodic odd-parity GS,and a transition from a 2e- to a 1e-periodic GS. The 2e-periodic odd-parity GS persistent in gate-voltage occurs when a spin-resolved subgap state crosses zero energy. For our 1e-periodic GSs we explicitly show the origin being a single zero-energy state gapped from the continuum, i.e. compatible with an Andreev bound states stabilized at zero energy or the presence of Majorana zero modes. △ Less

Submitted 5 November, 2018; v1 submitted 9 April, 2018; originally announced April 2018.

Journal ref: Nature Communicationsvolume 9, Article number: 4801 (2018)

Selective Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires

Authors: S. T. Gill, J. Damasco, B. E. Janicek, M. S. Durkin, V. Humbert, S. Gazibegovic, D. Car, E. P. A. M. Bakkers, P. Y. Huang, N. Mason

Abstract: Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the supercon… ▽ More Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the superconductor and nanowire is strongly believed to be the main culprit for disorder and the resulting soft superconducting gap ubiquitous in tunneling studies of hybrid semiconductor-superconductor systems. Additionally, a lack of ballistic transport in nanowire systems can create bound states that mimic Majorana signatures. We resolve these problems through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically possess a hard superconducting gap and demonstrate ballistic 1D superconductivity and near perfect transmission of supercurrents in the single mode regime, requisites for engineering and controlling 1D topological superconductivity. Additionally, we demonstrate that epitaxial InSb-Al superconducting island devices, the building blocks for Majorana based quantum computing applications, prepared using selective area epitaxy can achieve micron scale ballistic 1D transport. Our results pave the way for the development of networks of ballistic superconducting electronics for quantum device applications. △ Less

Submitted 11 September, 2018; v1 submitted 20 March, 2018; originally announced March 2018.

Quantized Majorana conductance

Authors: Hao Zhang, Chun-Xiao Liu, Sasa Gazibegovic, Di Xu, John A. Logan, Guanzhong Wang, Nick van Loo, Jouri D. S. Bommer, Michiel W. A. de Moor, Diana Car, Roy L. M. Op het Veld, Petrus J. van Veldhoven, Sebastian Koelling, Marcel A. Verheijen, Mihir Pendharkar, Daniel J. Pennachio, Borzoyeh Shojaei, Joon Sue Lee, Chris J. Palmstrom, Erik P. A. M. Bakkers, S. Das Sarma, Leo P. Kouwenhoven

Abstract: Majorana zero-modes hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool to identify the presence of Majorana zero-modes, for instance as a zero-bias peak (ZBP) in differential-conductance. The Majorana ZBP-height is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature. Interestingly, this qua… ▽ More Majorana zero-modes hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool to identify the presence of Majorana zero-modes, for instance as a zero-bias peak (ZBP) in differential-conductance. The Majorana ZBP-height is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature. Interestingly, this quantization is a direct consequence of the famous Majorana symmetry, 'particle equals antiparticle'. The Majorana symmetry protects the quantization against disorder, interactions, and variations in the tunnel coupling. Previous experiments, however, have shown ZBPs much smaller than 2e2/h, with a recent observation of a peak-height close to 2e2/h. Here, we report a quantized conductance plateau at 2e2/h in the zero-bias conductance measured in InSb semiconductor nanowires covered with an Al superconducting shell. Our ZBP-height remains constant despite changing parameters such as the magnetic field and tunnel coupling, i.e. a quantized conductance plateau. We distinguish this quantized Majorana peak from possible non-Majorana origins, by investigating its robustness on electric and magnetic fields as well as its temperature dependence. The observation of a quantized conductance plateau strongly supports the existence of non-Abelian Majorana zero-modes in the system, consequently paving the way for future braiding experiments. △ Less

Submitted 29 October, 2017; originally announced October 2017.

Comments: 5 figures

Journal ref: Nature (2018)

Split-Channel Ballistic Transport in an InSb Nanowire

Authors: J. C. Estrada Saldaña, Y. M. Niquet, J. P. Cleuziou, E. J. H. Lee, D. Car, S. R. Plissard, E. P. A. M. Bakkers, S. De Franceschi

Abstract: We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of… ▽ More We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of $e^2$/h, yet we find a quantized conductance pattern largely dependent on the configuration of voltages applied to the bottom gates. In particular, we can make the first plateau disappear leaving a first conductance step of 2$e^2/h$, which is indicative of a remarkable two-fold subband degeneracy that can persist up to several Tesla. For certain gate voltage settings, we also observe the presence of discrete resonant states producing conductance features that can resemble those expected from the opening of a helical gap in the subband structure. We explain our experimental findings through the formation of two spatially separated 1D conduction channels. △ Less

Submitted 9 March, 2018; v1 submitted 8 September, 2017; originally announced September 2017.

Realizing Majorana zero modes in superconductor-semiconductor heterostructures

Authors: R. M. Lutchyn, E. P. A. M. Bakkers, L. P. Kouwenhoven, P. Krogstrup, C. M. Marcus, Y. Oreg

Abstract: Realizing topological superconductivity and Majorana zero modes in the laboratory is one of the major goals in condensed matter physics. We review the current status of this rapidly-develo** field, focusing on semiconductor-superconductor proposals for topological superconductivity. Material science progress and robust signatures of Majorana zero modes in recent experiments are discussed. After… ▽ More Realizing topological superconductivity and Majorana zero modes in the laboratory is one of the major goals in condensed matter physics. We review the current status of this rapidly-develo** field, focusing on semiconductor-superconductor proposals for topological superconductivity. Material science progress and robust signatures of Majorana zero modes in recent experiments are discussed. After a brief introduction to the subject, we outline several next-generation experiments probing exotic properties of Majorana zero modes, including fusion rules and non-Abelian exchange statistics. Finally, we discuss prospects for implementing Majorana-based topological quantum computation in these systems. △ Less

Submitted 24 February, 2018; v1 submitted 16 July, 2017; originally announced July 2017.

Comments: 20 pages, 8 figures, review article

Journal ref: Nat Rev Mater 3, 52 - 68 (2018)

Ballistic superconductivity in semiconductor nanowires

Authors: Hao Zhang, Önder Gül, Sonia Conesa-Boj, Michał P. Nowak, Michael Wimmer, Kun Zuo, Vincent Mourik, Folkert K. de Vries, Jasper van Veen, Michiel W. A. de Moor, Jouri D. S. Bommer, David J. van Woerkom, Diana Car, Sébastien R. Plissard, Erik P. A. M. Bakkers, Marina Quintero-Pérez, Maja C. Cassidy, Sebastian Koelling, Srijit Goswami, Kenji Watanabe, Takashi Taniguchi, Leo P. Kouwenhoven

Abstract: Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brou… ▽ More Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here, we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor which enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. △ Less

Submitted 10 July, 2017; originally announced July 2017.

Comments: This submission contains the first part of arXiv:1603.04069. The second part of arXiv:1603.04069 is included in a separate paper

Journal ref: Nature Communications 8, 16025 (2017)

Supercurrent interference in few-mode nanowire Josephson junctions

Authors: Kun Zuo, Vincent Mourik, Daniel B. Szombati, Bas Nijholt, David J. van Woerkom, Attila Geresdi, Jun Chen, Viacheslav P. Ostroukh, Anton R. Akhmerov, Sebastién R. Plissard, Diana Car, Erik P. A. M. Bakkers, Dmitry I. Pikulin, Leo P. Kouwenhoven, Sergey M. Frolov

Abstract: Junctions created by coupling two superconductors via a semiconductor nanowire in the presence of high magnetic fields are the basis for detection, fusion, and braiding of Majorana bound states. We study NbTiN/InSb nanowire/NbTiN Josephson junctions and find that their critical currents in the few mode regime are strongly suppressed by magnetic field. Furthermore, the dependence of the critical cu… ▽ More Junctions created by coupling two superconductors via a semiconductor nanowire in the presence of high magnetic fields are the basis for detection, fusion, and braiding of Majorana bound states. We study NbTiN/InSb nanowire/NbTiN Josephson junctions and find that their critical currents in the few mode regime are strongly suppressed by magnetic field. Furthermore, the dependence of the critical current on magnetic field exhibits gate-tunable nodes. Based on a realistic numerical model we conclude that the Zeeman effect induced by the magnetic field and the spin-orbit interaction in the nanowire are insufficient to explain the observed evolution of the Josephson effect. We find the interference between the few occupied one-dimensional modes in the nanowire to be the dominant mechanism responsible for the critical current behavior. The suppression and non-monotonic evolution of critical currents at finite magnetic field should be taken into account when designing circuits based on Majorana bound states. △ Less

Submitted 5 November, 2017; v1 submitted 11 June, 2017; originally announced June 2017.

Comments: Published version, ref 36 included here

Journal ref: Phys. Rev. Lett. 119, 187704 (2017)

Epitaxy of Advanced Nanowire Quantum Devices

Authors: Sasa Gazibegovic, Diana Car, Hao Zhang, Stijn C. Balk, John A. Logan, Michiel W. A. de Moor, Maja C. Cassidy, Rudi Schmits, Di Xu, Guanzhong Wang, Peter Krogstrup, Roy L. M. Op het Veld, Jie Shen, Daniël Bouman, Borzoyeh Shojaei, Daniel Pennachio, Joon Sue Lee, Petrus J. van Veldhoven, Sebastian Koelling, Marcel A. Verheijen, Leo P. Kouwenhoven, Chris J. Palmstrøm, Erik P. A. M. Bakkers

Abstract: Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor. To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exc… ▽ More Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor. To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of single-crystalline nanowires coupled to superconducting islands. Here, we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks having a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire "hashtags" reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens new avenues for the realization of epitaxial 3-dimensional quantum device architectures. △ Less

Submitted 10 December, 2021; v1 submitted 3 May, 2017; originally announced May 2017.

Comments: data of the paper can be found at DOI: 10.5281/zenodo.4572619 or link: https://zenodo.org/record/5025868#.YbMBfi-iFHg

Journal ref: Nature 548, 434-438 (2017)

Observation of Conductance Quantization in InSb Nanowire Networks

Authors: Elham M. T. Fadaly, Hao Zhang, Sonia Conesa-Boj, Diana Car, Önder Gül, Sébastien R. Plissard, Roy L. M. Op het Veld, Sebastian Kölling, Leo P. Kouwenhoven, Erik P. A. M. Bakkers

Abstract: Majorana Zero Modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offers a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a… ▽ More Majorana Zero Modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offers a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a certain sequence. Most of the proposed Majorana braiding circuits require nanowire networks with minimal disorder. Here, the electronic transport across a junction between two merged InSb nanowires is studied to investigate how disordered these nanowire networks are. Conductance quantization plateaus are observed in all contact pairs of the epitaxial InSb nanowire networks; the hallmark of ballistic transport behavior. △ Less

Submitted 12 July, 2021; v1 submitted 15 March, 2017; originally announced March 2017.

Comments: See doi: 10.5281/zenodo.4989952 for source data. No changes in this version compared to the previous version

Josephson radiation and shot noise of a semiconductor nanowire junction

Authors: David J. van Woerkom, Alex Proutski, Ruben J. J. van Gulik, Tamás Kriváchy, Diana Car, Sèbastian R. Plissard, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Attila Geresdi

Abstract: We measured the Josephson radiation emitted by an InSb semiconductor nanowire junction utilizing photon assisted quasiparticle tunneling in an AC-coupled superconducting tunnel junction. We quantify the action of the local microwave environment by evaluating the frequency dependence of the inelastic Cooper-pair tunneling of the nanowire junction and find the zero frequency impedance $Z(0)=492\,Ω$… ▽ More We measured the Josephson radiation emitted by an InSb semiconductor nanowire junction utilizing photon assisted quasiparticle tunneling in an AC-coupled superconducting tunnel junction. We quantify the action of the local microwave environment by evaluating the frequency dependence of the inelastic Cooper-pair tunneling of the nanowire junction and find the zero frequency impedance $Z(0)=492\,Ω$ with a cutoff frequency of $f_0=33.1\,$GHz. We extract a circuit coupling efficiency of $η\approx 0.1$ and a detector quantum efficiency approaching unity in the high frequency limit. In addition to the Josephson radiation, we identify a shot-noise contribution with a Fano factor $F\approx1$, consistently with the presence of single electron states in the nanowire channel. △ Less

Submitted 21 October, 2017; v1 submitted 9 February, 2017; originally announced February 2017.

Comments: Raw data and supplementary calculations are available at http://dx.doi.org/10.4121/uuid:2cfc62ff-e15e-4e90-90e1-e6254baecb12

Journal ref: Phys. Rev. B 96, 094508 (2017)

Hard superconducting gap in InSb nanowires

Authors: Önder Gül, Hao Zhang, Folkert K. de Vries, Jasper van Veen, Kun Zuo, Vincent Mourik, Sonia Conesa-Boj, Michał P. Nowak, David J. van Woerkom, Marina Quintero-Pérez, Maja C. Cassidy, Attila Geresdi, Sebastian Koelling, Diana Car, Sébastien R. Plissard, Erik P. A. M. Bakkers, Leo P. Kouwenhoven

Abstract: Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material system… ▽ More Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material systems. We have systematically studied how the interface between an InSb semiconductor nanowire and a NbTiN superconductor affects the induced superconducting properties. Step by step, we improve the homogeneity of the interface while ensuring a barrier-free electrical contact to the superconductor, and obtain a hard gap in the InSb nanowire. The magnetic field stability of NbTiN allows the InSb nanowire to maintain a hard gap and a supercurrent in the presence of magnetic fields (~ 0.5 Tesla), a requirement for topological superconductivity in one-dimensional systems. Our study provides a guideline to induce superconductivity in various experimental platforms such as semiconductor nanowires, two dimensional electron gases and topological insulators, and holds relevance for topological superconductivity and quantum computation. △ Less

Submitted 10 April, 2017; v1 submitted 8 February, 2017; originally announced February 2017.

Comments: published version

Journal ref: Nano Letters 17, 2690-2696 (2017)

Conductance through a helical state in an InSb nanowire

Authors: Jakob Kammhuber, Maja C Cassidy, Fei Pei, Michal P Nowak, Adriaan Vuik, Diana Car, Sèbastien R Plissard, Erik P A M Bakkers, Michael Wimmer, Leo P Kouwenhoven

Abstract: The motion of an electron and its spin are generally not coupled. However in a one dimensional material with strong spin-orbit interaction (SOI) a helical state may emerge at finite magnetic fields, where electrons of opposite spin will have opposite momentum. The existence of this helical state has applications for spin filtering and Cooper pair splitter devices and is an essential ingredient for… ▽ More The motion of an electron and its spin are generally not coupled. However in a one dimensional material with strong spin-orbit interaction (SOI) a helical state may emerge at finite magnetic fields, where electrons of opposite spin will have opposite momentum. The existence of this helical state has applications for spin filtering and Cooper pair splitter devices and is an essential ingredient for realizing topologically protected quantum computing using Majorana zero modes. Here we report electrical conductance measurements of a quantum point contact (QPC) formed in an indium antimonide nanowire as a function of magnetic field. At magnetic fields exceeding 3T, the $2e^2/h$ plateau shows a reentrant conductance feature towards $1e^2/h$ which increases linearly in width with magnetic field before envelo** the $1e^2/h$ plateau. Rotating the external magnetic field either parallel or perpendicular to the spin-orbit field allows us to clearly attribute this experimental signature to SOI. We compare our observations with a model of a QPC incorporating SOI and extract a spin-orbit energy of ~6.5meV, which is significantly stronger than the SO energy obtained by other methods. △ Less

Submitted 24 January, 2017; originally announced January 2017.

Journal ref: Nature Communications 8, 478 (2017)

Hybrid Superconductor-Quantum Point Contact Devices using InSb Nanowires

Authors: S. T. Gill, J. Damasco, D. Car, E. P. A. M. Bakkers, N. Mason

Abstract: Proposals for studying topological superconductivity and Majorana bound states in nanowires proximity coupled to superconductors require that transport in the nanowire is ballistic. Previous work on hybrid nanowire-superconductor systems has shown evidence for Majorana bound states, but these experiments were also marked by disorder, which disrupts ballistic transport. In this letter, we demonstra… ▽ More Proposals for studying topological superconductivity and Majorana bound states in nanowires proximity coupled to superconductors require that transport in the nanowire is ballistic. Previous work on hybrid nanowire-superconductor systems has shown evidence for Majorana bound states, but these experiments were also marked by disorder, which disrupts ballistic transport. In this letter, we demonstrate ballistic transport in InSb nanowires interfaced directly with superconducting Al by observing quantized conductance at zero-magnetic field. Additionally, we demonstrate that the nanowire is proximity coupled to the superconducting contacts by observing Andreev reflection. These results are important steps for robustly establishing topological superconductivity in InSb nanowires. △ Less

Submitted 5 December, 2016; originally announced December 2016.

Journal ref: Appl. Phys. Lett. 109, 233502 (2016)

InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices

Authors: Diana Car, Sonia Conesa-Boj, Hao Zhang, Roy L. M. Op het Veld, Michiel W. A. de Moor, Elham M. T. Fadaly, Önder Gül, Sebastian Kölling, Sebastien R. Plissard, Vigdis Toresen, Michael T. Wimmer, Kenji Watanabe, Takashi Taniguchi, Leo P. Kouwenhoven, Erik P. A. M. Bakkers

Abstract: Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and… ▽ More Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the GaxIn1-xSb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB)-fits to the experimental I-V traces. △ Less

Submitted 12 July, 2021; v1 submitted 17 November, 2016; originally announced November 2016.

Comments: See doi: 10.5281/zenodo.5064400 for source data. No changes in this version compared to the previous version

Journal ref: Nano Lett.17, 721 (2017)

Andreev Molecules in Semiconductor Nanowire Double Quantum Dots

Authors: Zhaoen Su, Alexandre B. Tacla, Moïra Hocevar, Diana Car, Sébastien R. Plissard, Erik P. A. M. Bakkers, Andrew J. Daley, David Pekker, Sergey M. Frolov

Abstract: Quantum simulation is a way to study unexplored Hamiltonians by map** them onto the assemblies of well-understood quantum systems such as ultracold atoms in optical lattices, trapped ions or superconducting circuits. Semiconductor nanostructures which form the backbone of classical computing hold largely untapped potential for quantum simulation. In particular, chains of quantum dots in semicond… ▽ More Quantum simulation is a way to study unexplored Hamiltonians by map** them onto the assemblies of well-understood quantum systems such as ultracold atoms in optical lattices, trapped ions or superconducting circuits. Semiconductor nanostructures which form the backbone of classical computing hold largely untapped potential for quantum simulation. In particular, chains of quantum dots in semiconductor nanowires can be used to emulate one-dimensional Hamiltonians such as the toy model of a topological p-wave superconductor. Here we realize a building block of this model, a double quantum dot with superconducting contacts, in an indium antimonide nanowire. In each dot, tunnel-coupling to a superconductor induces Andreev bound states. We demonstrate that these states hybridize to form the double-dot Andreev molecular states. We establish the parity and the spin structure of Andreev molecular levels by monitoring their evolution in electrostatic potential and magnetic field. Understanding Andreev molecules is a key step towards building longer chains which are predicted to generate Majorana bound states at the end sites. Two superconducting quantum dots are already sufficient to test the fusion rules of Majorana bound states, a milestone towards fault-tolerant topological quantum computing. △ Less

Submitted 17 November, 2016; v1 submitted 2 November, 2016; originally announced November 2016.

Comments: 15 pages and 4 figures in the main text, 28 pages and 18 figures in the supplementary information. Raw data can be downloaded at http://data.4tu.nl/repository/uuid:e99d1ab7-2e82-447e-a314-f230a0da4a95

Experimental Phase Diagram of a One-Dimensional Topological Superconductor

Authors: Jun Chen, Peng Yu, John Stenger, Moïra Hocevar, Diana Car, Sébastien R. Plissard, Erik P. A. M. Bakkers, Tudor D. Stanescu, Sergey M. Frolov

Abstract: Topological superconductors can host Majorana quasiparticles which supersede the fermion/boson dichotomy and offer a pathway to fault tolerant quantum computation. In one-dimensional systems zero-energy Majorana states are bound to the ends of the topologically superconducting regions. An experimental signature of a Majorana bound state is a conductance peak at zero source-drain voltage bias in a… ▽ More Topological superconductors can host Majorana quasiparticles which supersede the fermion/boson dichotomy and offer a pathway to fault tolerant quantum computation. In one-dimensional systems zero-energy Majorana states are bound to the ends of the topologically superconducting regions. An experimental signature of a Majorana bound state is a conductance peak at zero source-drain voltage bias in a tunneling experiment. Here, we identify the bulk topological phase in a semiconductor nanowire coupled to a conventional superconductor. We map out its phase diagram through the dependence of zero-bias peak on the chemical potential and magnetic field. Our findings are consistent with calculations for a finite-length topological nanowire. Knowledge of the phase diagram makes it possible to predictably tune nanowire segments in and out of the topological phase, thus controlling the positions and couplings of multiple Majorana bound states. This ability is a prerequisite for Majorana braiding, an experiment in which Majorana quantum states are exchanged in order to both demonstrate their non-abelian character and realize topological quantum bits. △ Less

Submitted 14 October, 2016; originally announced October 2016.

Comments: 39 pages; Experimental raw data attached. To view attachments, please download Ancillary files on the right

Journal ref: Sci Adv 3 (9), e1701476 (2017)

Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

Authors: Matthias Brauns, Joost Ridderbos, Ang Li, Wilfred G. van der Wiel, Erik P. A. M. Bakkers, Floris Zwanenburg

Abstract: We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot… ▽ More We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing. △ Less

Submitted 11 October, 2016; originally announced October 2016.

Journal ref: Applied Physics Letters 109, 143113 (2016)

Anisotropic Pauli spin blockade in hole quantum dots

Authors: Matthias Brauns, Joost Ridderbos, Ang Li, Erik P. A. M. Bakkers, Wilfred G. van der Wiel, Floris A. Zwanenburg

Abstract: We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at low magnetic fields to spin-flip cotunneling, for which we measure a strong anisotropy related to an anisotropic g-factor. At higher magnetic fields we see signat… ▽ More We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at low magnetic fields to spin-flip cotunneling, for which we measure a strong anisotropy related to an anisotropic g-factor. At higher magnetic fields we see signatures for leakage current caused by spin-orbit coupling between (1,1)-singlet and (2,0)-triplet states. Taking into account these anisotropic spin-flip mechanisms, we can choose the magnetic field direction with the longest spin lifetime for improved spin-orbit qubits. △ Less

Submitted 30 July, 2016; originally announced August 2016.

Journal ref: Physical Review B, 94(2016), 041411(R)

Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots

Authors: Matthias Brauns, Joost Ridderbos, Ang Li, Erik P. A. M. Bakkers, Floris A. Zwanenburg

Abstract: We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpendicular to both the nanowire and the electric field induced by local gates. Alignment of the magnetic field with the electric field reduces g* significantly. g* is almost completely quenched when the magnetic field is a… ▽ More We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpendicular to both the nanowire and the electric field induced by local gates. Alignment of the magnetic field with the electric field reduces g* significantly. g* is almost completely quenched when the magnetic field is aligned with the nanowire axis. These findings confirm recent calculations, where the obtained anisotropy is attributed to a Rashba-type spin-orbit interaction induced by heavy-hole light-hole mixing. In principle, this facilitates manipulation of spin-orbit qubits by means of a continuous high-frequency electric field. △ Less

Submitted 18 March, 2016; originally announced March 2016.

Journal ref: Physical Review B, 93(12), 121408(R) (2016)

Ballistic Majorana nanowire devices

Authors: Önder Gül, Hao Zhang, Jouri D. S. Bommer, Michiel W. A. de Moor, Diana Car, Sébastien R. Plissard, Erik P. A. M. Bakkers, Attila Geresdi, Kenji Watanabe, Takashi Taniguchi, Leo P. Kouwenhoven

Abstract: Majorana modes are zero-energy excitations of a topological superconductor that exhibit non-Abelian statistics. Following proposals for their detection in a semiconductor nanowire coupled to an s-wave superconductor, several tunneling experiments reported characteristic Majorana signatures. Reducing disorder has been a prime challenge for these experiments because disorder can mimic the zero-energ… ▽ More Majorana modes are zero-energy excitations of a topological superconductor that exhibit non-Abelian statistics. Following proposals for their detection in a semiconductor nanowire coupled to an s-wave superconductor, several tunneling experiments reported characteristic Majorana signatures. Reducing disorder has been a prime challenge for these experiments because disorder can mimic the zero-energy signatures of Majoranas, and renders the topological properties inaccessible. Here, we show characteristic Majorana signatures in InSb nanowire devices exhibiting clear ballistic transport properties. Application of a magnetic field and spatial control of carrier density using local gates generates a zero bias peak that is rigid over a large region in the parameter space of chemical potential, Zeeman energy, and tunnel barrier potential. The reduction of disorder allows us to resolve separate regions in the parameter space with and without a zero bias peak, indicating topologically distinct phases. These observations are consistent with the Majorana theory in a ballistic system, and exclude for the first time the known alternative explanations that invoke disorder or a nonuniform chemical potential. △ Less

Submitted 26 April, 2021; v1 submitted 13 March, 2016; originally announced March 2016.

Comments: See https://doi.org/10.5281/zenodo.4721357 for source data. No changes in this version (v3) compared to the previous version (v2)

Journal ref: Nature Nanotechnology (2018)

Conductance Quantization at zero magnetic field in InSb nanowires

Authors: Jakob Kammhuber, Maja C. Cassidy, Hao Zhang, Önder Gül, Fei Pei, Michiel W. A. de Moor, Bas Nijholt, Kenji Watanabe, Takashi Taniguchi, Diana Car, Sebastien R. Plissard, Erik P. A. M. Bakkers, Leo P. Kouwenhoven

Abstract: Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectri… ▽ More Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectric environment we can consistently achieve conductance quantization at zero magnetic field. Additionally, studying the sub-band evolution in a rotating magnetic field reveals an orbital degeneracy between the second and third sub-bands for perpendicular fields above 1T. △ Less

Submitted 11 March, 2016; originally announced March 2016.

Journal ref: Nano lett. 16(6), 3482-3486 (2016)

Josephson $\varphi_{0}$-junction in nanowire quantum dots

Authors: D. B. Szombati, S. Nadj-Perge, D. Car, S. R. Plissard, E. P. A. M. Bakkers, L. P. Kouwenhoven

Abstract: The Josephson effect describes supercurrent flowing through a junction connecting two superconducting leads by a thin barrier [1]. This current is driven by a superconducting phase difference $φ$ between the leads. In the presence of chiral and time reversal symmetry of the Cooper pair tunneling process [2] the current is strictly zero when $φ$ vanishes. Only if these underlying symmetries are bro… ▽ More The Josephson effect describes supercurrent flowing through a junction connecting two superconducting leads by a thin barrier [1]. This current is driven by a superconducting phase difference $φ$ between the leads. In the presence of chiral and time reversal symmetry of the Cooper pair tunneling process [2] the current is strictly zero when $φ$ vanishes. Only if these underlying symmetries are broken the supercurrent for $φ=0$ may be finite [3-5]. This corresponds to a ground state of the junction being offset by a phase $φ_{0}$, different from 0 or $π$. Here, we report such a Josephson $φ_{0}$-junction based on a nanowire quantum dot. We use a quantum interferometer device in order to investigate phase offsets and demonstrate that $φ_{0}$ can be controlled by electrostatic gating. Our results have possible far reaching implications for superconducting flux and phase defined quantum bits as well as for exploring topological superconductivity in quantum dot systems. △ Less

Submitted 23 February, 2016; v1 submitted 3 December, 2015; originally announced December 2015.

Journal ref: Nat. Phys. 12 (2016) 568

Optical transmission matrix as a probe of the photonic interaction strength

Authors: Duygu Akbulut, Tom Strudley, Jacopo Bertolotti, Erik P. A. M. Bakkers, Ad Lagendijk, Otto L. Muskens, Willem L. Vos, Allard P. Mosk

Abstract: We demonstrate that optical transmission matrices (TM) of disordered complex media provide a powerful tool to extract the photonic interaction strength, independent of surface effects. We measure TM of strongly scattering GaP nanowires and plot the singular value density of the measured matrices and a random matrix model. By varying the free parameters of the model, the transport mean free path an… ▽ More We demonstrate that optical transmission matrices (TM) of disordered complex media provide a powerful tool to extract the photonic interaction strength, independent of surface effects. We measure TM of strongly scattering GaP nanowires and plot the singular value density of the measured matrices and a random matrix model. By varying the free parameters of the model, the transport mean free path and effective refractive index, we retrieve the photonic interaction strength. From numerical simulations we conclude that TM statistics is hardly sensitive to surface effects, in contrast to enhanced backscattering or total transmission based methods. △ Less

Submitted 15 November, 2015; originally announced November 2015.

Comments: 5 pages 4 figures

Journal ref: Phys. Rev. A 94, 043817 (2016)

Realization of microwave quantum circuits using hybrid superconducting-semiconducting nanowire Josephson elements

Authors: G. de Lange, B. van Heck, A. Bruno, D. J. van Woerkom, A. Geresdi, S. R. Plissard, E. P. A. M. Bakkers, A. R. Akhmerov, L. DiCarlo

Abstract: We report the realization of quantum microwave circuits using hybrid superconductor-semiconductor Josephson elements comprised of InAs nanowires contacted by NbTiN. Capacitively-shunted single elements behave as transmon qubits with electrically tunable transition frequencies. Two-element circuits also exhibit transmon-like behavior near zero applied flux, but behave as flux qubits at half the flu… ▽ More We report the realization of quantum microwave circuits using hybrid superconductor-semiconductor Josephson elements comprised of InAs nanowires contacted by NbTiN. Capacitively-shunted single elements behave as transmon qubits with electrically tunable transition frequencies. Two-element circuits also exhibit transmon-like behavior near zero applied flux, but behave as flux qubits at half the flux quantum, where non-sinusoidal current-phase relations in the elements produce a double-well Josephson potential. These hybrid Josephson elements are promising for applications requiring microwave superconducting circuits operating in magnetic field. △ Less

Submitted 29 March, 2015; originally announced March 2015.

Comments: Main text: 4 pages, 4 figures; Supplement: 10 pages, 8 figures, 1 table

Journal ref: Phys. Rev. Lett. 115, 127002 (2015)

Spin-orbit interaction in InSb nanowires

Authors: I. van Weperen, B. Tarasinski, D. Eeltink, V. S. Pribiag, S. R. Plissard, E. P. A. M. Bakkers, L. P. Kouwenhoven, M. Wimmer

Abstract: We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of $0.5 -1\,\text{eVÅ}$ co… ▽ More We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of $0.5 -1\,\text{eVÅ}$ corresponding to a spin-orbit energy of $0.25-1\,\text{meV}$. These values underline the potential of InSb nanowires in the study of Majorana fermions in hybrid semiconductor-superconductor devices. △ Less

Submitted 18 May, 2015; v1 submitted 2 December, 2014; originally announced December 2014.

Comments: Version as accepted for publication as a Rapid in Phys. Rev. B

Journal ref: Phys. Rev. B 91, 201413(R) (2015)

Towards high mobility InSb nanowire devices

Authors: Önder Gül, David J. van Woerkom, Ilse van Weperen, Diana Car, Sébastien R. Plissard, Erik P. A. M. Bakkers, Leo P. Kouwenhoven

Abstract: We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility… ▽ More We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of $\sim2.5\mathbin{\times}10^4$ cm$^2$/Vs. We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate. △ Less

Submitted 8 May, 2015; v1 submitted 26 November, 2014; originally announced November 2014.

Comments: 13 pages, 5 figures (main text); 7 pages, 2 figures, 2 tables (supplementary text)

Journal ref: Nanotechnology 26 (2015) 215202

Map** the directional emission of quasi-two-dimensional photonic crystals of semiconductor nanowires using Fourier microscopy

Authors: Yannik Fontana, Grzegorz Grzela, Erik P. A. M. Bakkers, Jaime Gómez Rivas

Abstract: Controlling the dispersion and directionality of the emission of nanosources is one of the major goals of nanophotonics research. This control will allow the development of highly efficient nanosources even at the single photon level. One of the ways to achieve this goal is to couple the emission to Bloch modes of periodic structures. Here, we present the first measurements of the directional emis… ▽ More Controlling the dispersion and directionality of the emission of nanosources is one of the major goals of nanophotonics research. This control will allow the development of highly efficient nanosources even at the single photon level. One of the ways to achieve this goal is to couple the emission to Bloch modes of periodic structures. Here, we present the first measurements of the directional emission from nanowire photonic crystals by using Fourier microscopy. With this technique we efficiently collect and resolve the directional emission of nanowires within the numerical aperture of a microscope objective. The light emission from a heterostructure grown in each nanowire is governed by the photonic (Bloch) modes of the photonic crystal. We also demonstrate that the directionality of the emission can be easily controlled by infiltrating the photonic crystal with a high refractive index liquid. This work opens new possibilities for the control of the emission of sources in nanowires. △ Less

Submitted 4 November, 2013; originally announced November 2013.

Journal ref: PHYS. REV. B 86, 245303 (2012)

Harnessing nuclear spin polarization fluctuations in a semiconductor nanowire

Authors: P. Peddibhotla, F. Xue, H. I. T. Hauge, S. Assali, E. P. A. M. Bakkers, M. Poggio

Abstract: Soon after the first measurements of nuclear magnetic resonance (NMR) in a condensed matter system, Bloch predicted the presence of statistical fluctuations proportional to $1/\sqrt{N}$ in the polarization of an ensemble of $N$ spins. First observed by Sleator et al., so-called "spin noise" has recently emerged as a critical ingredient in nanometer-scale magnetic resonance imaging (nanoMRI). This… ▽ More Soon after the first measurements of nuclear magnetic resonance (NMR) in a condensed matter system, Bloch predicted the presence of statistical fluctuations proportional to $1/\sqrt{N}$ in the polarization of an ensemble of $N$ spins. First observed by Sleator et al., so-called "spin noise" has recently emerged as a critical ingredient in nanometer-scale magnetic resonance imaging (nanoMRI). This prominence is a direct result of MRI resolution improving to better than 100 nm^3, a size-scale in which statistical spin fluctuations begin to dominate the polarization dynamics. We demonstrate a technique that creates spin order in nanometer-scale ensembles of nuclear spins by harnessing these fluctuations to produce polarizations both larger and narrower than the natural thermal distribution. We focus on ensembles containing ~10^6 phosphorus and hydrogen spins associated with single InP and GaP nanowires (NWs) and their hydrogen-containing adsorbate layers. We monitor, control, and capture fluctuations in the ensemble's spin polarization in real-time and store them for extended periods. This selective capture of large polarization fluctuations may provide a route for enhancing the weak magnetic signals produced by nanometer-scale volumes of nuclear spins. The scheme may also prove useful for initializing the nuclear hyperfine field of electron spin qubits in the solid-state. △ Less

Submitted 23 July, 2013; originally announced July 2013.

Comments: 18 pages, 5 figures

Journal ref: Nature Phys. 9, 631 (2013)

Electrical control over single hole spins in nanowire quantum dots

Authors: V. S. Pribiag, S. Nadj-Perge, S. M. Frolov, J. W. G. van den Berg, I. van Weperen, S. R. Plissard, E. P. A. M. Bakkers, L. P. Kouwenhoven

Abstract: Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potent… ▽ More Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fabrication has so far kept the promise of hole-spin-based electronic devices out of reach in conventional III-V heterostructures. Here, we report gate-tuneable hole quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tuneable between hole and electron QDs, enabling direct comparison between the hyperfine interaction strengths, g-factors and spin blockade anisotropies in the two regimes. △ Less

Submitted 11 February, 2013; originally announced February 2013.

Journal ref: Nature Nanotechnology 8, 170-174 (2013)

Fast spin-orbit qubit in an indium antimonide nanowire

Authors: J. W. G. van den Berg, S. Nadj-Perge, V. S. Pribiag, S. R. Plissard, E. P. A. M. Bakkers, S. M. Frolov, L. P. Kouwenhoven

Abstract: Due to the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed due to intrinsic dierences in their g-factors. Based on R… ▽ More Due to the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed due to intrinsic dierences in their g-factors. Based on Ramsey fringe measurements, we extract a coherence time T_2* = 8 +/- 1 ns at a driving frequency of 18.65 GHz. Applying a Hahn echo sequence extends this coherence time to 35 ns. △ Less

Submitted 26 October, 2012; originally announced October 2012.

Comments: 8 pages, 8 figures including supplementary material

Suppression of Zeeman gradients by nuclear polarization in double quantum dots

Authors: S. M. Frolov, J. Danon, S. Nadj-Perge, K. Zuo, J. W. W. van Tilburg, V. S. Pribiag, J. W. G. van den Berg, E. P. A. M. Bakkers, L. P. Kouwenhoven

Abstract: We use electric dipole spin resonance to measure dynamic nuclear polarization in InAs nanowire quantum dots. The resonance shifts in frequency when the system transitions between metastable high and low current states, indicating the presence of nuclear polarization. We propose that the low and the high current states correspond to different total Zeeman energy gradients between the two quantum do… ▽ More We use electric dipole spin resonance to measure dynamic nuclear polarization in InAs nanowire quantum dots. The resonance shifts in frequency when the system transitions between metastable high and low current states, indicating the presence of nuclear polarization. We propose that the low and the high current states correspond to different total Zeeman energy gradients between the two quantum dots. In the low current state, dynamic nuclear polarization efficiently compensates the Zeeman gradient due to the $g$-factor mismatch, resulting in a suppressed total Zeeman gradient. We present a theoretical model of electron-nuclear feedback that demonstrates a fixed point in nuclear polarization for nearly equal Zeeman splittings in the two dots and predicts a narrowed hyperfine gradient distribution. △ Less

Submitted 7 September, 2012; originally announced September 2012.

Avalanche amplification of a single exciton in a semiconductor nanowire

Authors: Gabriele Bulgarini, Michael E. Reimer, Moïra Hocevar, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Val Zwiller

Abstract: Interfacing single photons and electrons is a crucial ingredient for sharing quantum information between remote solid-state qubits. Semiconductor nanowires offer the unique possibility to combine optical quantum dots with avalanche photodiodes, thus enabling the conversion of an incoming single photon into a macroscopic current for efficient electrical detection. Currently, millions of excitation… ▽ More Interfacing single photons and electrons is a crucial ingredient for sharing quantum information between remote solid-state qubits. Semiconductor nanowires offer the unique possibility to combine optical quantum dots with avalanche photodiodes, thus enabling the conversion of an incoming single photon into a macroscopic current for efficient electrical detection. Currently, millions of excitation events are required to perform electrical read-out of an exciton qubit state. Here we demonstrate multiplication of carriers from only a single exciton generated in a quantum dot after tunneling into a nanowire avalanche photodiode. Due to the large amplification of both electrons and holes (> 10^4), we reduce by four orders of magnitude the number of excitation events required to electrically detect a single exciton generated in a quantum dot. This work represents a significant step towards single-shot electrical read-out and offers a new functionality for on-chip quantum information circuits. △ Less

Submitted 18 April, 2012; originally announced April 2012.

Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices

Authors: V. Mourik, K. Zuo, S. M. Frolov, S. R. Plissard, E. P. A. M. Bakkers, L. P. Kouwenhoven

Abstract: Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. We report electrical measurements on InSb nanowires contacted with one normal (Au) and one superconducting electrode (NbTiN). Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence… ▽ More Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. We report electrical measurements on InSb nanowires contacted with one normal (Au) and one superconducting electrode (NbTiN). Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence of magnetic fields of order 100 mT we observe bound, mid-gap states at zero bias voltage. These bound states remain fixed to zero bias even when magnetic fields and gate voltages are changed over considerable ranges. Our observations support the hypothesis of Majorana fermions in nanowires coupled to superconductors. △ Less

Submitted 12 April, 2012; originally announced April 2012.

Comments: Raw data available at http://dx.doi.org/10.4121/uuid:8bf81177-2f2b-49c2-aaf5-d36739873dd9

Bright single-photon sources in bottom-up tailored nanowires

Authors: Michael E. Reimer, Gabriele Bulgarini, Nika Akopian, Moïra Hocevar, Maaike Bouwes Bavinck, Marcel A. Verheijen, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Val Zwiller

Abstract: The ability to achieve near-unity light extraction efficiency is necessary for a truly deterministic single photon source. The most promising method to reach such high efficiencies is based on embedding single photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light extraction efficiencies in current top-down approaches are limited by fabrication imperf… ▽ More The ability to achieve near-unity light extraction efficiency is necessary for a truly deterministic single photon source. The most promising method to reach such high efficiencies is based on embedding single photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light extraction efficiencies in current top-down approaches are limited by fabrication imperfections and etching induced defects. The efficiency is further tempered by randomly positioned off-axis quantum emitters. Here, we present perfectly positioned single quantum dots on the axis of a tailored nanowire waveguide using bottom-up growth. In comparison to quantum dots in nanowires without waveguide, we demonstrate a 24-fold enhancement in the single photon flux, corresponding to a light extraction efficiency of 42 %. Such high efficiencies in one-dimensional nanowires are promising to transfer quantum information over large distances between remote stationary qubits using flying qubits within the same nanowire p-n junction. △ Less

Submitted 26 March, 2012; originally announced March 2012.

Comments: 19 pages, 6 figures

Journal ref: Nature Commun. 3, 737 (2012)