Showing 1–50 of 118 results for author: Bakkers, E P A M

Cross-Platform Autonomous Control of Minimal Kitaev Chains

Authors: David van Driel, Rouven Koch, Vincent P. M. Sietses, Sebastiaan L. D. ten Haaf, Chun-Xiao Liu, Francesco Zatelli, Bart Roovers, Alberto Bordin, Nick van Loo, Guanzhong Wang, Jan Cornelis Wolff, Grzegorz P. Mazur, Tom Dvir, Ivan Kulesh, Qingzhen Wang, A. Mert Bozkurt, Sasa Gazibegovic, Ghada Badawy, Erik P. A. M. Bakkers, Michael Wimmer, Srijit Goswami, Jose L. Lado, Leo P. Kouwenhoven, Eliska Greplova

Abstract: Contemporary quantum devices are reaching new limits in size and complexity, allowing for the experimental exploration of emergent quantum modes. However, this increased complexity introduces significant challenges in device tuning and control. Here, we demonstrate autonomous tuning of emergent Majorana zero modes in a minimal realization of a Kitaev chain. We achieve this task using cross-platfor… ▽ More Contemporary quantum devices are reaching new limits in size and complexity, allowing for the experimental exploration of emergent quantum modes. However, this increased complexity introduces significant challenges in device tuning and control. Here, we demonstrate autonomous tuning of emergent Majorana zero modes in a minimal realization of a Kitaev chain. We achieve this task using cross-platform transfer learning. First, we train a tuning model on a theory model. Next, we retrain it using a Kitaev chain realization in a two-dimensional electron gas. Finally, we apply this model to tune a Kitaev chain realized in quantum dots coupled through a semiconductor-superconductor section in a one-dimensional nanowire. Utilizing a convolutional neural network, we predict the tunneling and Cooper pair splitting rates from differential conductance measurements, employing these predictions to adjust the electrochemical potential to a Majorana sweet spot. The algorithm successfully converges to the immediate vicinity of a sweet spot (within 1.5 mV in 67.6% of attempts and within 4.5 mV in 80.9% of cases), typically finding a sweet spot in 45 minutes or less. This advancement is a step** stone towards autonomous tuning of emergent modes in interacting systems, and towards foundational tuning machine learning models that can be deployed across a range of experimental platforms. △ Less

Submitted 7 May, 2024; originally announced May 2024.

Signatures of Majorana protection in a three-site Kitaev chain

Authors: Alberto Bordin, Chun-Xiao Liu, Tom Dvir, Francesco Zatelli, Sebastiaan L. D. ten Haaf, David van Driel, Guanzhong Wang, Nick van Loo, Thomas van Caekenberghe, Jan Cornelis Wolff, Yining Zhang, Ghada Badawy, Sasa Gazibegovic, Erik P. A. M. Bakkers, Michael Wimmer, Leo P. Kouwenhoven, Grzegorz P. Mazur

Abstract: Majorana zero modes (MZMs) are non-Abelian excitations predicted to emerge at the edges of topological superconductors. One proposal for realizing a topological superconductor in one dimension involves a chain of spinless fermions, coupled through $p$-wave superconducting pairing and electron hop**. This concept is also known as the Kitaev chain. A minimal two-site Kitaev chain has recently been… ▽ More Majorana zero modes (MZMs) are non-Abelian excitations predicted to emerge at the edges of topological superconductors. One proposal for realizing a topological superconductor in one dimension involves a chain of spinless fermions, coupled through $p$-wave superconducting pairing and electron hop**. This concept is also known as the Kitaev chain. A minimal two-site Kitaev chain has recently been experimentally realized using quantum dots (QDs) coupled through a superconductor. In such a minimal chain, MZMs are quadratically protected against global perturbations of the QD electrochemical potentials. However, they are not protected from perturbations of the inter-QD couplings. In this work, we demonstrate that extending the chain to three sites offers greater protection than the two-site configuration. The enhanced protection is evidenced by the stability of the zero-energy modes, which is robust against variations in both the coupling amplitudes and the electrochemical potential variations in the constituent QDs. While our device offers all the desired control of the couplings it does not allow for superconducting phase control. Our experimental observations are in good agreement with numerical simulated conductances with phase averaging. Our work pioneers the development of longer Kitaev chains, a milestone towards topological protection in QD-based chains. △ Less

Submitted 29 February, 2024; originally announced February 2024.

Supercurrent through an Andreev trimer

Authors: Alberto Bordin, Florian J. Bennebroek Evertsz', Gorm O. Steffensen, Tom Dvir, Grzegorz P. Mazur, David van Driel, Nick van Loo, Jan Cornelis Wolff, Erik P. A. M. Bakkers, Alfredo Levy Yeyati, Leo P. Kouwenhoven

Abstract: Detection and control of Andreev Bound States (ABSs) localized at semiconductor-superconductor interfaces are essential for their use in quantum applications. Here we investigate the impact of ABSs on the supercurrent through a Josephson junction containing a quantum dot (QD). Additional normal-metal tunneling probes on both sides of the junction unveil the ABSs residing at the semi-superconductor… ▽ More Detection and control of Andreev Bound States (ABSs) localized at semiconductor-superconductor interfaces are essential for their use in quantum applications. Here we investigate the impact of ABSs on the supercurrent through a Josephson junction containing a quantum dot (QD). Additional normal-metal tunneling probes on both sides of the junction unveil the ABSs residing at the semi-superconductor interfaces. Such knowledge provides an ingredient missing in previous studies, improving the connection between theory and experimental data. By varying the ABS energies using electrostatic gates, we show control of the switching current, with the ability to alter it by more than an order of magnitude. Finally, the large degree of ABS tunability allows us to realize a three-site ABS-QD-ABS molecule (Andreev trimer) in which the central QD is screened by both ABSs. This system is studied simultaneously using both supercurrent and spectroscopy. △ Less

Submitted 29 February, 2024; originally announced February 2024.

Compromise-Free Scaling of Qubit Speed and Coherence

Authors: Miguel J. Carballido, Simon Svab, Rafael S. Eggli, Taras Patlatiuk, Pierre Chevalier Kwon, Jonas Schuff, Rahel M. Kaiser, Leon C. Camenzind, Ang Li, Natalia Ares, Erik P. A. M Bakkers, Stefano Bosco, J. Carlos Egues, Daniel Loss, Dominik M. Zumbühl

Abstract: Across a broad range of qubits, a pervasive trade-off becomes obvious: increased coherence seems to be only possible at the cost of qubit speed. This is consistent with the notion that protecting a qubit from its noisy surroundings also limits the control over it. Indeed, from ions to atoms, to superconductors and spins, the leading qubits share a similar Q-factor - the product of speed and cohere… ▽ More Across a broad range of qubits, a pervasive trade-off becomes obvious: increased coherence seems to be only possible at the cost of qubit speed. This is consistent with the notion that protecting a qubit from its noisy surroundings also limits the control over it. Indeed, from ions to atoms, to superconductors and spins, the leading qubits share a similar Q-factor - the product of speed and coherence time - even though the speed and coherence of various qubits can differ by up to 8 orders of magnitude. This is the qubit speed-coherence dilemma: qubits are either coherent but slow or fast but short-lived. Here, we demonstrate a qubit for which we can triple the speed while simultaneously quadrupling the Hahn-echo coherence time when tuning a local electric field. In this way, the qubit speed and coherence scale together without compromise on either quantity, boosting the Q-factor by over an order of magnitude. Our qubit is a hole spin in a Ge/Si core/shell nanowire providing strong 1D confinement, resulting in the direct Rashba spin-orbit interaction. Due to Heavy-hole light-hole mixing a maximum of the spin-orbit strength is reached at finite electrical field. At the local maximum, charge fluctuations are decoupled from the qubit and coherence is enhanced, yet the drive speed becomes maximal. Our proof-of-concept experiment shows that a properly engineered qubit can be made faster and simultaneously more coherent, removing an important roadblock. Further, it demonstrates that through all-electrical control a qubit can be sped up, without coupling more strongly to the electrical noise environment. As charge fluctuators are unavoidable in semiconductors and all-electrical control is highly scalable, our results improve the prospects for quantum computing in Si and Ge. △ Less

Submitted 22 May, 2024; v1 submitted 11 February, 2024; originally announced February 2024.

Comments: Main: 6 pages with 3 display items plus 2 pages for references and methods Supplementary: 12 pages with 7 display items

Catalyst-free MBE growth of PbSnTe nanowires with tunable aspect ratio

Authors: Mathijs G. C. Mientjes, Xin Guan, Pim J. H. Lueb, Marcel A. Verheijen, Erik P. A. M. Bakkers

Abstract: Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However, Sn-vacancies form in SnTe, causing a high hole density, hindering topological transport from the surface being measured. This issue could be relieved by using nanowires… ▽ More Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However, Sn-vacancies form in SnTe, causing a high hole density, hindering topological transport from the surface being measured. This issue could be relieved by using nanowires with a high surface-to-volume ratio. Furthermore, SnTe can be alloyed with Pb reducing the Sn-vacancies while maintaining its topological phase. Here we present the catalyst-free growth of monocrystalline PbSnTe in molecular beam epitaxy (MBE). By the addition of a pre-deposition stage before the growth, we have control over the nucleation phase and thereby increase the nanowire yield. This facilitates tuning the nanowire aspect ratio by a factor of four by varying the growth parameters. These results allow us to grow specific morphologies for future transport experiments to probe the topological surface states in a Pb1-xSnxTe-based platform. △ Less

Submitted 10 January, 2024; originally announced January 2024.

Evidence for $π$-shifted Cooper quartets and few-mode transport in PbTe nanowire three-terminal Josephson junctions

Authors: Mohit Gupta, Vipin Khade, Colin Riggert, Lior Shani, Gavin Menning, Pim Lueb, Jason Jung, Régis Mélin, Erik P. A. M. Bakkers, Vlad S. Pribiag

Abstract: Josephson junctions are typically characterized by a single phase difference across two superconductors. This conventional two-terminal Josephson junction can be generalized to a multi-terminal device where the Josephson energy contains terms with contributions from multiple independent phase variables. Such multi-terminal Josephson junctions (MTJJs) are being considered as platforms for engineeri… ▽ More Josephson junctions are typically characterized by a single phase difference across two superconductors. This conventional two-terminal Josephson junction can be generalized to a multi-terminal device where the Josephson energy contains terms with contributions from multiple independent phase variables. Such multi-terminal Josephson junctions (MTJJs) are being considered as platforms for engineering effective Hamiltonians with non-trivial topologies, such as Weyl crossings and higher-order Chern numbers. This approach offers unique possibilities that are complementary to phenomena attainable in bulk crystals, including topological states in more than three dimensions and real-time gate-tunability of the Hamiltonians. However, these prospects rely on the ability to create MTJJs with non-classical multi-terminal couplings in which only a handful of quantum modes are populated. Here, we demonstrate these requirements by using a three-terminal Josephson junction fabricated on selective-area-grown (SAG) PbTe nanowires. We observe signatures of a $π$-shifted Josephson effect, consistent with inter-terminal couplings mediated by four-particle quantum states called Cooper quartets. We further observe supercurrent co-existent with a non-monotonic evolution of the conductance with gate voltage, indicating transport mediated by a few quantum modes in both two- and three-terminal devices. These results establish a platform for investigations of topological Hamiltonians based on Andreev bound states. △ Less

Submitted 22 April, 2024; v1 submitted 29 December, 2023; originally announced December 2023.

Coherent control of a few-channel hole type gatemon qubit

Authors: Han Zheng, Luk Yi Cheung, Nikunj Sangwan, Artem Kononov, Roy Haller, Joost Ridderbos, Carlo Ciaccia, Jann Hinnerk Ungerer, Ang Li, Erik P. A. M. Bakkers, Andreas Baumgartner, Christian Schönenberger

Abstract: Gatemon qubits are the electrically tunable cousins of superconducting transmon qubits. In this work, we demonstrate the full coherent control of a gatemon qubit based on hole carriers in a Ge/Si core/shell nanowire, with the longest coherence times in group IV material gatemons to date. The key to these results is a high-quality Josephson junction obtained in a straightforward and reproducible an… ▽ More Gatemon qubits are the electrically tunable cousins of superconducting transmon qubits. In this work, we demonstrate the full coherent control of a gatemon qubit based on hole carriers in a Ge/Si core/shell nanowire, with the longest coherence times in group IV material gatemons to date. The key to these results is a high-quality Josephson junction obtained in a straightforward and reproducible annealing technique. We demonstrate that the transport through the narrow junctions is dominated by only two quantum channels, with transparencies up to unity. This novel qubit platform holds great promise for quantum information applications, not only because it incorporates technologically relevant materials, but also because it provides new opportunities, like an ultrastrong spin-orbit coupling in the few-channel regime of Josephson junctions. △ Less

Submitted 11 December, 2023; originally announced December 2023.

Comments: 15 pages, 11 figures

Robust poor man's Majorana zero modes using Yu-Shiba-Rusinov states

Authors: Francesco Zatelli, David van Driel, Di Xu, Guanzhong Wang, Chun-Xiao Liu, Alberto Bordin, Bart Roovers, Grzegorz P. Mazur, Nick van Loo, Jan Cornelis Wolff, A. Mert Bozkurt, Ghada Badawy, Sasa Gazibegovic, Erik P. A. M. Bakkers, Michael Wimmer, Leo P. Kouwenhoven, Tom Dvir

Abstract: The recent realization of a two-site Kitaev chain featuring "poor man's Majorana" states demonstrates a path forward in the field of topological superconductivity. Harnessing the potential of these states for quantum information processing, however, requires increasing their robustness to external perturbations. Here, we form a two-site Kitaev chain using proximitized quantum dots hosting Yu-Shiba… ▽ More The recent realization of a two-site Kitaev chain featuring "poor man's Majorana" states demonstrates a path forward in the field of topological superconductivity. Harnessing the potential of these states for quantum information processing, however, requires increasing their robustness to external perturbations. Here, we form a two-site Kitaev chain using proximitized quantum dots hosting Yu-Shiba-Rusinov states. The strong hybridization between such states and the superconductor enables the creation of poor man's Majorana states with a gap larger than $70 \mathrm{~μeV}$. It also greatly reduces the charge dispersion compared to Kitaev chains made with non-proximitized quantum dots. The large gap and reduced sensitivity to charge fluctuations will benefit qubit manipulation and demonstration of non-abelian physics using poor man's Majorana states. △ Less

Submitted 6 November, 2023; originally announced November 2023.

Comments: 45 pages, 14 figures

Charge sensing the parity of an Andreev molecule

Authors: David van Driel, Bart Roovers, Francesco Zatelli, Alberto Bordin, Guanzhong Wang, Nick van Loo, Jan Cornelis Wolff, Grzegorz P. Mazur, Sasa Gazibegovic, Ghada Badawy, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Tom Dvir

Abstract: The proximity effect of superconductivity on confined states in semiconductors gives rise to various bound states such as Andreev bound states (ABSs), Andreev molecules and Majorana zero modes. While such bound states do not conserve charge, their Fermion parity is a good quantum number. One way to measure parity is to convert it to charge first, which is then sensed. In this work, we sense the ch… ▽ More The proximity effect of superconductivity on confined states in semiconductors gives rise to various bound states such as Andreev bound states (ABSs), Andreev molecules and Majorana zero modes. While such bound states do not conserve charge, their Fermion parity is a good quantum number. One way to measure parity is to convert it to charge first, which is then sensed. In this work, we sense the charge of ABSs and Andreev molecules in an InSb-Al hybrid nanowire using an integrated quantum dot operated as a charge sensor. We show how charge sensing measurements can resolve the even and odd states of an Andreev molecule, without affecting the parity. Such an approach can be further utilized for parity measurements of Majorana zero modes in Kitaev chains based on quantum dots. △ Less

Submitted 3 November, 2023; originally announced November 2023.

A Versatile Method of Engineering the Electron Wavefunction of Hybrid Quantum Devices

Authors: Guoan Li, Guang Yang, Ting Lin, M. Rossi, G. Badawy, Zhiyuan Zhang, Xiaofan Shi, Jiayu Shi, Degui Qian, Fang Lu, Lin Gu, An-Qi Wang, Zhaozheng Lyu, Guangtong Liu, Fanming Qu, Ziwei Dou, Qinghua Zhang, E. P. A. M. Bakkers, M. P. Nowak, P. Wójcik, Li Lu, Jie Shen

Abstract: With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the stren… ▽ More With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the strength of S-Sm coupling and the proximitized superconducting gap. Here, we fabricate hybrid devices in a generic way with argon milling to modify the interface while maintaining its high quality. First, after the milling the atomically connected S-Sm interfaces appear, resulting in a large induced gap, as well as the ballistic transport revealed by the multiple Andreev reflections and quantized above-gap conductance plateaus. Second, by comparing transport measurement with Schrödinger-Poisson (SP) calculations, we demonstrate that argon milling is capable of varying the band bending strength in the semiconducting wire as the electrons tend to accumulate on the etched surface for longer milling time. Finally, we perform nonlocal measurements on advanced devices to demonstrate the coexistence and tunability of crossed Andreev reflection (CAR) and elastic co-tunneling (ECT) -- key ingredients for building the prototype setup for realization of Kitaev chain and quantum entanglement probing. Such a versatile method, compatible with the standard fabrication process and accompanied by the well-controlled modification of the interface, will definitely boost the creation of more sophisticated hybrid devices for exploring physics in solid-state systems. △ Less

Submitted 13 July, 2023; originally announced July 2023.

Comments: 18 pages, 9 figures

Diffusive and Ballistic Transport in Ultra-thin InSb Nanowire Devices Using a Few-layer-Graphene-AlOx Gate

Authors: Lior Shani, Pim Lueb, Gavin Menning, Mohit Gupta, Colin Riggert, Tyler Littman, Frey Hackbarth, Marco Rossi, Jason Jung, Ghada Badawy, Marcel A. Verheijen, Paul Crowell, Erik P. A. M. Bakkers, Vlad S. Pribiag

Abstract: Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable topological regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work we investigate both… ▽ More Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable topological regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work we investigate both aspects. We developed InSb nanowires with ultra-thin diameters, as well as a new gating approach, involving few-layer graphene (FLG) and Atomic Layer Deposition (ALD)-grown AlOx. Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices. △ Less

Submitted 31 May, 2023; originally announced June 2023.

Comments: 14 pages, 5 figures

Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots

Authors: Rafael S. Eggli, Simon Svab, Taras Patlatiuk, Dominique A. Trüssel, Miguel J. Carballido, Pierre Chevalier Kwon, Simon Geyer, Ang Li, Erik P. A. M. Bakkers, Andreas V. Kuhlmann, Dominik M. Zumbühl

Abstract: Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltage-tunable capacitors, so-called varactor diodes, can be used for in-situ tuning of the circuit impedance but deterior… ▽ More Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltage-tunable capacitors, so-called varactor diodes, can be used for in-situ tuning of the circuit impedance but deteriorate and fail at temperatures below 10 K and in magnetic fields. Here, we investigate a varactor based on strontium titanate with hyperabrupt capacitance-voltage characteristic, that is, a capacitance tunability similar to the best gallium arsenide-based devices. The varactor design introduced here is compact, scalable and easy to wirebond with an accessible capacitance range from 45 pF to 3.2 pF. We tune a resonant inductor-capacitor circuit to perfect impedance matching and observe robust, temperature and field independent matching down to 11 mK and up to 2 T in-plane field. Finally, we perform gate-dispersive charge sensing on a germanium/silicon core/shell nanowire hole double quantum dot, paving the way towards gate-based single-shot spin readout. Our results bring small, magnetic field-resilient, highly tunable varactors to mK temperatures, expanding the toolbox of cryo-radio frequency applications. △ Less

Submitted 6 December, 2023; v1 submitted 6 March, 2023; originally announced March 2023.

Comments: 5 pages + 5 pages Appendix; 4 figures + 8 figures in Appendix; presented at APS March Meeting 2023 Session N72.002

Journal ref: Phys. Rev. Applied 20, 054056 (2023)

Subgap spectroscopy along hybrid nanowires by nm-thick tunnel barriers

Authors: Vukan Levajac, Ji-Yin Wang, Grzegorz P. Mazur, Cristina Sfiligoj, Mathilde Lemang, Jan Cornelis Wolff, Alberto Bordin, Ghada Badawy, Sasa Gazibegovic, Erik P. A. M. Bakkers, Leo P. Kouwenhoven

Abstract: Tunneling spectroscopy is widely used to examine the subgap spectra in semiconductor-superconductor nanostructures when searching for Majorana zero modes (MZMs). Typically, semiconductor sections controlled by local gates at the ends of hybrids serve as tunnel barriers. Besides detecting states only at the hybrid ends, such gate-defined tunnel probes can cause the formation of non-topological subg… ▽ More Tunneling spectroscopy is widely used to examine the subgap spectra in semiconductor-superconductor nanostructures when searching for Majorana zero modes (MZMs). Typically, semiconductor sections controlled by local gates at the ends of hybrids serve as tunnel barriers. Besides detecting states only at the hybrid ends, such gate-defined tunnel probes can cause the formation of non-topological subgap states that mimic MZMs. Here, we develop an alternative type of tunnel probes to overcome these limitations. After the growth of an InSb-Al hybrid nanowire, a precisely controlled in-situ oxidation of the Al shell is performed to yield a nm-thick Al oxide layer. In such thin isolating layer, tunnel probes can be arbitrarily defined at any position along the hybrid nanowire by shadow-wall angle-deposition of metallic leads. This allows us to make multiple tunnel probes along single nanowire hybrids and to successfully identify Andreev bound states (ABSs) of various spatial extension residing along the hybrids. △ Less

Submitted 1 March, 2023; originally announced March 2023.

Comments: 38 pags, 5 figures

Spin-filtered measurements of Andreev bound states

Authors: David van Driel, Guanzhong Wang, Alberto Bordin, Nick van Loo, Francesco Zatelli, Grzegorz P. Mazur, Di Xu, Sasa Gazibegovic, Ghada Badawi, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Tom Dvir

Abstract: A semiconductor nanowire brought in proximity to a superconductor can form discrete, particle-hole symmetric states, known as Andreev bound states (ABSs). An ABS can be found in its ground or excited states of different spin and parity, such as a spin-zero singlet state with an even number of electrons or a spin-1/2 doublet state with an odd number of electrons. Considering the difference between… ▽ More A semiconductor nanowire brought in proximity to a superconductor can form discrete, particle-hole symmetric states, known as Andreev bound states (ABSs). An ABS can be found in its ground or excited states of different spin and parity, such as a spin-zero singlet state with an even number of electrons or a spin-1/2 doublet state with an odd number of electrons. Considering the difference between spin of the even and odd states, spin-filtered measurements have the potential to reveal the underlying ground state. To directly measure the spin of single-electron excitations, we probe an ABS using a spin-polarized quantum dot that acts as a bipolar spin filter, in combination with a non-polarized tunnel junction in a three-terminal circuit. We observe a spin-polarized excitation spectrum of the ABS, which in some cases is fully spin-polarized, despite the presence of strong spin-orbit interaction in the InSb nanowires. In addition, decoupling the hybrid from the normal lead blocks the ABS relaxation resulting in a current blockade where the ABS is trapped in an excited state. Spin-polarized spectroscopy of hybrid nanowire devices, as demonstrated here, is proposed as an experimental tool to support the observation of topological superconductivity. △ Less

Submitted 21 December, 2022; v1 submitted 20 December, 2022; originally announced December 2022.

Controlled crossed Andreev reflection and elastic co-tunneling mediated by Andreev bound states

Authors: Alberto Bordin, Guanzhong Wang, Chun-Xiao Liu, Sebastiaan L. D. ten Haaf, Grzegorz P. Mazur, Nick van Loo, Di Xu, David van Driel, Francesco Zatelli, Sasa Gazibegovic, Ghada Badawy, Erik P. A. M. Bakkers, Michael Wimmer, Leo P. Kouwenhoven, Tom Dvir

Abstract: A short superconducting segment can couple attached quantum dots via elastic co-tunneling (ECT) and crossed Andreev reflection (CAR). Such coupled quantum dots can host Majorana bound states provided that the ratio between CAR and ECT can be controlled. Metallic superconductors have so far been shown to mediate such tunneling phenomena, albeit with limited tunability. Here we show that Andreev bou… ▽ More A short superconducting segment can couple attached quantum dots via elastic co-tunneling (ECT) and crossed Andreev reflection (CAR). Such coupled quantum dots can host Majorana bound states provided that the ratio between CAR and ECT can be controlled. Metallic superconductors have so far been shown to mediate such tunneling phenomena, albeit with limited tunability. Here we show that Andreev bound states formed in semiconductor-superconductor heterostructures can mediate CAR and ECT over mesoscopic length scales. Andreev bound states possess both an electron and a hole component, giving rise to an intricate interference phenomenon that allows us to tune the ratio between CAR and ECT deterministically. We further show that the combination of intrinsic spin-orbit coupling in InSb nanowires and an applied magnetic field provides another efficient knob to tune the ratio between ECT and CAR and optimize the amount of coupling between neighboring quantum dots. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Journal ref: Physical Review X 13, 031031 (2023)

The gate-tunable Josephson diode

Authors: G. P. Mazur, N. van Loo, D. van Driel, J. -Y. Wang, G. Badawy, S. Gazibegovic, E. P. A. M Bakkers, L. P. Kouwenhoven

Abstract: Superconducting diodes are a recently-discovered quantum analogueue of classical diodes. The superconducting diode effect relies on the breaking of both time-reversal and inversion symmetry. As a result, the critical current of a superconductor can become dependent on the direction of the applied current. The combination of these ingredients naturally occurs in proximitized semiconductors under a… ▽ More Superconducting diodes are a recently-discovered quantum analogueue of classical diodes. The superconducting diode effect relies on the breaking of both time-reversal and inversion symmetry. As a result, the critical current of a superconductor can become dependent on the direction of the applied current. The combination of these ingredients naturally occurs in proximitized semiconductors under a magnetic field, which is also predicted to give rise to exotic physics such as topological superconductivity. In this work, we use InSb nanowires proximitized by Al to investigate the superconducting diode effect. Through shadow-wall lithography, we create short Josephson junctions with gate control of both the semiconducting weak link as well as the proximitized leads. When the magnetic field is applied perpendicular to the nanowire axis, the superconducting diode effect depends on the out-of-plane angle. In particular, it is strongest along a specific angle, which we interpret as the direction of the spin-orbit field in the proximitized leads. Moreover, the electrostatic gates can be used to drastically alter this effect and even completely suppress it. Finally, we also observe a significant gate-tunable diode effect when the magnetic field is applied parallel to the nanowire axis. Due to the considerable degree of control via electrostatic gating, the semiconductor-superconductor hybrid Josephson diode emerges as a promising element for innovative superconducting circuits and computation devices. △ Less

Submitted 25 November, 2022; originally announced November 2022.

Impact of junction length on supercurrent resilience against magnetic field in InSb-Al nanowire Josephson junctions

Authors: Vukan Levajac, Grzegorz P. Mazur, Nick van Loo, Francesco Borsoi, Ghada Badawy, Sasa Gazibegovic, Erik P. A. M. Bakkers, Sebastian Heedt, Leo P. Kouwenhoven, Ji-Yin Wang

Abstract: Semiconducting nanowire Josephson junctions represent an attractive platform to investigate the anomalous Josephson effect and detect topological superconductivity by studying Josephson supercurrent. However, an external magnetic field generally suppresses the supercurrent through hybrid nanowire junctions and significantly limits the field range in which the supercurrent phenomena can be studied.… ▽ More Semiconducting nanowire Josephson junctions represent an attractive platform to investigate the anomalous Josephson effect and detect topological superconductivity by studying Josephson supercurrent. However, an external magnetic field generally suppresses the supercurrent through hybrid nanowire junctions and significantly limits the field range in which the supercurrent phenomena can be studied. In this work, we investigate the impact of the length of InSb-Al nanowire Josephson junctions on the supercurrent resilience against magnetic fields. We find that the critical parallel field of the supercurrent can be considerably enhanced by reducing the junction length. Particularly, in 30 nm-long junctions supercurrent can persist up to 1.3 T parallel field - approaching the critical field of the superconducting film. Furthermore, we embed such short junctions into a superconducting loop and obtain the supercurrent interference at a parallel field of 1 T. Our findings are highly relevant for multiple experiments on hybrid nanowires requiring a magnetic field-resilient supercurrent. △ Less

Submitted 14 November, 2022; originally announced November 2022.

Comments: 17 pages, 5 figures in main text. 22 pages, 10 figures in supporting information

Electrostatic control of the proximity effect in the bulk of semiconductor-superconductor hybrids

Authors: N. van Loo, G. P. Mazur, T. Dvir, G. Wang, R. C. Dekker, J. -Y. Wang, M. Lemang, C. Sfiligoj, A. Bordin, D. van Driel, G. Badawy, S. Gazibegovic, E. P. A. M. Bakkers, L. P. Kouwenhoven

Abstract: The proximity effect in semiconductor-superconductor nanowires is expected to generate an induced gap in the semiconductor. The magnitude of this induced gap, together with the semiconductor properties like the spin-orbit coupling and $g$\,-\,factor, depends on the coupling between the materials. It is predicted that this coupling can be adjusted through the use of electric fields. We study this p… ▽ More The proximity effect in semiconductor-superconductor nanowires is expected to generate an induced gap in the semiconductor. The magnitude of this induced gap, together with the semiconductor properties like the spin-orbit coupling and $g$\,-\,factor, depends on the coupling between the materials. It is predicted that this coupling can be adjusted through the use of electric fields. We study this phenomena in InSb/Al/Pt hybrids using nonlocal spectroscopy. We show that these hybrids can be tuned such that the semiconductor and superconductor are strongly coupled. In this case, the induced gap is similar to the superconducting gap in the Al/Pt shell and closes only at high magnetic fields. In contrast, the coupling can be suppressed which leads to a strong reduction of the induced gap and critical magnetic field. At the crossover between the strong-coupling and weak-coupling regimes, we observe the closing and reopening of the induced gap in the bulk of a nanowire. Contrary to expectations, it is not accompanied by the formation of zero-bias peaks in the local conductance spectra. As a result, this cannot be attributed conclusively to the anticipated topological phase transition and we discuss possible alternative explanations. △ Less

Submitted 12 November, 2022; originally announced November 2022.

Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator

Authors: J. H. Ungerer, P. Chevalier Kwon, T. Patlatiuk, J. Ridderbos, A. Kononov, D. Sarmah, E. P. A. M. Bakkers, D. Zumbühl, C. Schönenberger

Abstract: Spin qubits in germanium are a promising contender for scalable quantum computers. Reading out of the spin and charge configuration of quantum dots formed in Ge/Si core/shell nanowires is typically performed by measuring the current through the nanowire. Here, we demonstrate a more versatile approach on investigating the charge configuration of these quantum dots. We employ a high-impedance, magne… ▽ More Spin qubits in germanium are a promising contender for scalable quantum computers. Reading out of the spin and charge configuration of quantum dots formed in Ge/Si core/shell nanowires is typically performed by measuring the current through the nanowire. Here, we demonstrate a more versatile approach on investigating the charge configuration of these quantum dots. We employ a high-impedance, magnetic-field resilient superconducting resonator based on NbTiN and couple it to a double quantum dot in a Ge/Si nanowire. This allows us to dispersively detect charging effects, even in the regime where the nanowire is fully pinched off and no direct current is present. Furthermore, by increasing the electro-chemical potential far beyond the nanowire pinch-off, we observe indications for depleting the last hole in the quantum dot by using the second quantum dot as a charge sensor. This work opens the door for dispersive readout and future spin-photon coupling in this system. △ Less

Submitted 3 December, 2022; v1 submitted 1 November, 2022; originally announced November 2022.

Journal ref: Mater. Quantum. Technol. 3 031001 (2023)

Single-crystalline PbTe film growth through reorientation

Authors: Jason Jung, Sander G. Schellingerhout, Orson A. H. van der Molen, Wouter H. J. Peeters, Marcel A. Verheijen, Erik P. A. M. Bakkers

Abstract: Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. Two principle growth modes are identified for material combinations with large lattice mismatch, Volmer-Weber and Stranski-Krastanov. Both lead to the formation of three-dimensional islands, hampering the growth of flat defect-free thin films. This limits the number of viable material combinations.… ▽ More Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. Two principle growth modes are identified for material combinations with large lattice mismatch, Volmer-Weber and Stranski-Krastanov. Both lead to the formation of three-dimensional islands, hampering the growth of flat defect-free thin films. This limits the number of viable material combinations. Here, we report a distinct growth mode found in molecular beam epitaxy of PbTe on InP initiated by pre-growth surface treatments. Early nucleation forms islands analogous to the Volmer-Weber growth mode, but film closure exhibits a flat surface with atomic terracing. Remarkably, despite multiple distinct crystal orientations found in the initial islands, the final film is single-crystalline. This is possible due to a reorientation process occurring during island coalescence, facilitating high quality heteroepitaxy despite the large lattice mismatch, difference in crystal structures and diverging thermal expansion coefficients of PbTe and InP. This growth mode offers a new strategy for the heteroepitaxy of dissimilar materials and expands the realm of possible material combinations. △ Less

Submitted 20 September, 2022; originally announced September 2022.

Realization of a minimal Kitaev chain in coupled quantum dots

Authors: Tom Dvir, Guanzhong Wang, Nick van Loo, Chun-Xiao Liu, Grzegorz P. Mazur, Alberto Bordin, Sebastiaan L. D. ten Haaf, Ji-Yin Wang, David van Driel, Francesco Zatelli, Xiang Li, Filip K. Malinowski, Sasa Gazibegovic, Ghada Badawy, Erik P. A. M. Bakkers, Michael Wimmer, Leo P. Kouwenhoven

Abstract: Majorana bound states constitute one of the simplest examples of emergent non-Abelian excitations in condensed matter physics. A toy model proposed by Kitaev shows that such states can arise at the ends of a spinless $p$-wave superconducting chain. Practical proposals for its realization require coupling neighboring quantum dots in a chain via both electron tunneling and crossed Andreev reflection… ▽ More Majorana bound states constitute one of the simplest examples of emergent non-Abelian excitations in condensed matter physics. A toy model proposed by Kitaev shows that such states can arise at the ends of a spinless $p$-wave superconducting chain. Practical proposals for its realization require coupling neighboring quantum dots in a chain via both electron tunneling and crossed Andreev reflection. While both processes have been observed in semiconducting nanowires and carbon nanotubes, crossed-Andreev interaction was neither easily tunable nor strong enough to induce coherent hybridization of dot states. Here we demonstrate the simultaneous presence of all necessary ingredients for an artificial Kitaev chain: two spin-polarized quantum dots in an InSb nanowire strongly coupled by both elastic co-tunneling and crossed Andreev reflection. We fine-tune this system to a sweet spot where a pair of Poor Man's Majorana states is predicted to appear. At this sweet spot, the transport characteristics satisfy the theoretical predictions for such a system, including pairwise correlation, zero charge and stability against local perturbations. While the simple system presented here can be scaled to simulate a full Kitaev chain with an emergent topological order, it can also be used imminently to explore relevant physics related to non-Abelian anyons. △ Less

Submitted 20 September, 2023; v1 submitted 16 June, 2022; originally announced June 2022.

Comments: Authors' version of the accepted manuscript

Journal ref: Nature 614, 445-459 (2023)

Large even-odd spacing and $g$-factor anisotropy in PbTe quantum dots

Authors: S. C. ten Kate, M. F. Ritter, A. Fuhrer, J. Jung, S. G. Schellingerhout, E. P. A. M. Bakkers, H. Riel, F. Nichele

Abstract: PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-o… ▽ More PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-odd spacing to the large dielectric constant and small effective electron mass of PbTe. By studying the Zeeman-induced level and Kondo splitting in finite magnetic fields, we extract the electron $g$-factor as a function of magnetic field direction. We find the $g$-factor tensor to be highly anisotropic, with principal $g$-factors ranging from 0.9 to 22.4, and to depend on the electronic configuration of the devices. These results indicate strong Rashba spin-orbit interaction in our PbTe quantum dots. △ Less

Submitted 13 May, 2022; originally announced May 2022.

Report number: Nano Lett. 2022, 22, 17, 7049--7056

Singlet and triplet Cooper pair splitting in hybrid superconducting nanowires

Authors: Guanzhong Wang, Tom Dvir, Grzegorz P. Mazur, Chun-Xiao Liu, Nick van Loo, Sebastiaan L. D. ten Haaf, Alberto Bordin, Sasa Gazibegovic, Ghada Badawy, Erik P. A. M. Bakkers, Michael Wimmer, Leo P. Kouwenhoven

Abstract: In most naturally occurring superconductors, electrons with opposite spins are paired up to form Cooper pairs. This includes both conventional $s$-wave superconductors such as aluminum as well as high-$T_\text{c}$, $d$-wave superconductors. Materials with intrinsic $p$-wave superconductivity, hosting Cooper pairs made of equal-spin electrons, have not been conclusively identified, nor synthesized,… ▽ More In most naturally occurring superconductors, electrons with opposite spins are paired up to form Cooper pairs. This includes both conventional $s$-wave superconductors such as aluminum as well as high-$T_\text{c}$, $d$-wave superconductors. Materials with intrinsic $p$-wave superconductivity, hosting Cooper pairs made of equal-spin electrons, have not been conclusively identified, nor synthesized, despite promising progress. Instead, engineered platforms where $s$-wave superconductors are brought into contact with magnetic materials have shown convincing signatures of equal-spin pairing. Here, we directly measure equal-spin pairing between spin-polarized quantum dots. This pairing is proximity-induced from an $s$-wave superconductor into a semiconducting nanowire with strong spin-orbit interaction. We demonstrate such pairing by showing that breaking a Cooper pair can result in two electrons with equal spin polarization. Our results demonstrate controllable detection of singlet and triplet pairing between the quantum dots. Achieving such triplet pairing in a sequence of quantum dots will be required for realizing an artificial Kitaev chain. △ Less

Submitted 1 August, 2023; v1 submitted 6 May, 2022; originally announced May 2022.

Comments: Authors' version of the accepted manuscript

Journal ref: Nature 612, 448-453 (2022)

Variable and orbital-dependent spin-orbit field orientations in a InSb double quantum dot characterized via dispersive gate sensing

Authors: Lin Han, Michael Chan, Damaz de Jong, Christian Prosko, Ghada Badawy, Sasa Gazibegovic, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Filip K. Malinowski, Wolfgang Pfaff

Abstract: Utilizing dispersive gate sensing (DGS), we investigate the spin-orbit field ($\textbf{B}_{SO}$) orientation in a many-electron double quantum dot (DQD) defined in an InSb nanowire. While characterizing the inter-dot tunnel couplings, the measured dispersive signal depends on the electron charge occupancy, as well as on the amplitude and orientation of the external magnetic field. The dispersive s… ▽ More Utilizing dispersive gate sensing (DGS), we investigate the spin-orbit field ($\textbf{B}_{SO}$) orientation in a many-electron double quantum dot (DQD) defined in an InSb nanowire. While characterizing the inter-dot tunnel couplings, the measured dispersive signal depends on the electron charge occupancy, as well as on the amplitude and orientation of the external magnetic field. The dispersive signal is mostly insensitive to the external field orientation when a DQD is occupied by a total odd number of electrons. For a DQD occupied by a total even number of electrons, the dispersive signal is reduced when the finite external magnetic field aligns with the effective $\textbf{B}_{SO}$ orientation. This fact enables the identification of $\textbf{B}_{SO}$ orientations for different DQD electron occupancies. The $\textbf{B}_{SO}$ orientation varies drastically between charge transitions, and is generally neither perpendicular to the nanowire nor in the chip plane. Moreover, $\textbf{B}_{SO}$ is similar for pairs of transitions involving the same valence orbital, and varies between such pairs. Our work demonstrates the practicality of DGS in characterizing spin-orbit interactions in quantum dot systems, without requiring any current flow through the device. △ Less

Submitted 12 April, 2022; v1 submitted 11 March, 2022; originally announced March 2022.

Parametric exploration of zero-energy modes in three-terminal InSb-Al nanowire devices

Authors: Ji-Yin Wang, Nick van Loo, Grzegorz P. Mazur, Vukan Levajac, Filip K. Malinowski, Mathilde Lemang, Francesco Borsoi, Ghada Badawy, Sasa Gazibegovic, Erik P. A. M. Bakkers, Marina Quintero-Perez, Sebastian Heedt, Leo P. Kouwenhoven

Abstract: We systematically study three-terminal InSb-Al nanowire devices by using radio-frequency reflectometry. Tunneling spectroscopy measurements on both ends of the hybrid nanowires are performed while systematically varying the chemical potential, magnetic field and junction transparencies. Identifying the lowest-energy state allows for the construction of lowest- and zero-energy state diagrams, which… ▽ More We systematically study three-terminal InSb-Al nanowire devices by using radio-frequency reflectometry. Tunneling spectroscopy measurements on both ends of the hybrid nanowires are performed while systematically varying the chemical potential, magnetic field and junction transparencies. Identifying the lowest-energy state allows for the construction of lowest- and zero-energy state diagrams, which show how the states evolve as a function of the aforementioned parameters. Importantly, comparing the diagrams taken for each end of the hybrids enables the identification of states which do not coexist simultaneously, ruling out a significant amount of the parameter space as candidates for a topological phase. Furthermore, altering junction transparencies filters out zero-energy states sensitive to a local gate potential. Such a measurement strategy significantly reduces the time necessary to identify a potential topological phase and minimizes the risk of falsely recognizing trivial bound states as Majorana zero modes. △ Less

Submitted 1 March, 2022; originally announced March 2022.

Comments: Main text: 12 pages, 9 figures. SupplementaryMaterials: 12 pages, 14 figures

Spin-mixing enhanced proximity effect in aluminum-based superconductor-semiconductor hybrids

Authors: G. P. Mazur, N. van Loo, J. Y. Wang, T. Dvir, G. Wang, A. Khindanov, S. Korneychuk, F. Borsoi, R. C. Dekker, G. Badawy, P. Vinke, S. Gazibegovic, E. P. A. M. Bakkers, M. Quintero-Perez, S. Heedt, L. P. Kouwenhoven

Abstract: In superconducting quantum circuits, aluminum is one of the most widely used materials. It is currently also the superconductor of choice for the development of topological qubits. In this application, however, aluminum-based devices suffer from poor magnetic field compatibility. In this article, we resolve this limitation by showing that adatoms of heavy elements (e.g. platinum) increase the crit… ▽ More In superconducting quantum circuits, aluminum is one of the most widely used materials. It is currently also the superconductor of choice for the development of topological qubits. In this application, however, aluminum-based devices suffer from poor magnetic field compatibility. In this article, we resolve this limitation by showing that adatoms of heavy elements (e.g. platinum) increase the critical field of thin aluminum films by more than a factor of two. Using tunnel junctions, we show that the increased field resilience originates from spin-orbit scattering introduced by Pt. We exploit this property in the context of the superconducting proximity effect in semiconductor-superconductor hybrids, where we show that InSb nanowires strongly coupled to Al/Pt films can maintain superconductivity up to 7T. The two-electron charging effect, a fundamental requirement for topological quantum computation, is shown to be robust against the presence of heavy adatoms. Additionally, we use non-local spectroscopy in a three-terminal geometry to probe the bulk of hybrid devices, showing that it remains free of sub-gap states. Finally, we demonstrate that semiconductor states which are proximitized by Al/Pt films maintain their ability to Zeeman-split in an applied magnetic field. Combined with the chemical stability and well-known fabrication routes of aluminum, Al/Pt emerges as the natural successor to Al-based systems and is a compelling alternative to other superconductors, whenever high-field resilience is required. △ Less

Submitted 21 February, 2022; originally announced February 2022.

Spin and Orbital Spectroscopy in the Absence of Coulomb Blockade in Lead Telluride Nanowire Quantum Dots

Authors: M. Gomanko, E. J. de Jong, Y. Jiang, S. G. Schellingerhout, E. P. A. M. Bakkers, S. M. Frolov

Abstract: We investigate quantum dots in semiconductor PbTe nanowire devices. Due to the accessibility of ambipolar transport in PbTe, quantum dots can be occupied both with electrons and holes. Owing to a very large dielectric constant in PbTe of order 1000, we do not observe Coulomb blockade which typically obfuscates the orbital and spin spectra. We extract large and highly anisotropic effective Lande g-… ▽ More We investigate quantum dots in semiconductor PbTe nanowire devices. Due to the accessibility of ambipolar transport in PbTe, quantum dots can be occupied both with electrons and holes. Owing to a very large dielectric constant in PbTe of order 1000, we do not observe Coulomb blockade which typically obfuscates the orbital and spin spectra. We extract large and highly anisotropic effective Lande g-factors, in the range 20-44. The absence of Coulomb blockade allows direct readout, at zero source-drain bias, of spin-orbit hybridization energies of up to 600 microelectronvolt. These spin properties make PbTe nanowires, the recently synthesized members of group IV-VI materials family, attractive as a materials platform for quantum technology, such as spin and topological qubits. △ Less

Submitted 22 May, 2022; v1 submitted 25 November, 2021; originally announced November 2021.

Comments: Full transport data available via Zenodo at https://zenodo.org/communities/frolovlab/

Journal ref: SciPost Phys. 13, 089 (2022)

Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires

Authors: Ghada Badawy, Bomin Zhang, Tomáš Rauch, Jamo Momand, Sebastian Koelling, Jason Jung, Sasa Gazibegovic, Oussama Moutanabbir, Bart J. Kooi, Silvana Botti, Marcel A. Verheijen, Sergey M. Frolov, Erik P. A. M. Bakkers

Abstract: Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topol… ▽ More Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, we combine the II-VI cadmium telluride (CdTe) with the III-V InSb in the form of core-shell (InSb-CdTe) nanowires and explore potential applications based on the electronic structure of the InSb-CdTe interface and the epitaxy of CdTe on the InSb nanowires. We determine the electronic structure of the InSb-CdTe interface using density functional theory and extract a type-I band alignment with a small conduction band offset ($\leq$ 0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of the structural quality of these shells, we demonstrate that the lattice-matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These epitaxial shells do not introduce disorder to the InSb nanowires as indicated by the comparable field-effect mobility we measure for both uncapped and CdTe-capped nanowires. △ Less

Submitted 9 November, 2021; originally announced November 2021.

Growth of PbTe nanowires by Molecular Beam Epitaxy

Authors: Sander G. Schellingerhout, Eline J. de Jong, Maksim Gomanko, Xin Guan, Yifan Jiang, Max S. M. Hoskam, Sebastian Koelling, Oussama Moutanabbir, Marcel A. Verheijen, Sergey M. Frolov, Erik P. A. M. Bakkers

Abstract: Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family that has significant untapped potential for exploration. Due to its high electron mobility, strong spin-orbit coupling and ultrahigh dielectric constant it can hos… ▽ More Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family that has significant untapped potential for exploration. Due to its high electron mobility, strong spin-orbit coupling and ultrahigh dielectric constant it can host few-electron quantum dots and ballistic quantum wires with opportunities for control of electron spins and other quantum degrees of freedom. Here, we report the fabrication of PbTe nanowires by molecular beam epitaxy. We achieve defect-free single crystalline PbTe with large aspect ratios up to 50 suitable for quantum devices. Furthermore, by fabricating a single nanowire field effect transistor, we attain bipolar transport, extract the bandgap and observe Fabry-Perot oscillations of conductance, a signature of quasiballistic transmission. △ Less

Submitted 25 October, 2021; originally announced October 2021.

Nonlocal measurement of quasiparticle charge and energy relaxation in proximitized semiconductor nanowires using quantum dots

Authors: Guanzhong Wang, Tom Dvir, Nick van Loo, Grzegorz P. Mazur, Sasa Gazibegovic, Ghada Badawy, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Gijs de Lange

Abstract: The lowest-energy excitations of superconductors do not carry an electric charge, as their wave function is equally electron-like and hole-like. This fundamental property is not easy to study in electrical measurements that rely on the charge to generate an observable signal. The ability of a quantum dot to act as a charge filter enables us to solve this problem and measure the quasiparticle charg… ▽ More The lowest-energy excitations of superconductors do not carry an electric charge, as their wave function is equally electron-like and hole-like. This fundamental property is not easy to study in electrical measurements that rely on the charge to generate an observable signal. The ability of a quantum dot to act as a charge filter enables us to solve this problem and measure the quasiparticle charge in superconducting-semiconducting hybrid nanowire heterostructures. We report measurements on a three-terminal circuit, in which an injection lead excites a non-equilibrium quasiparticle distribution in the hybrid system, and the electron or hole component of the resulting quasiparticles is detected using a quantum dot as a tunable charge and energy filter. The results verify the chargeless nature of the quasiparticles at the gap edge and reveal the complete relaxation of injected charge and energy in a proximitized nanowire, resolving open questions in previous three-terminal experiments. △ Less

Submitted 4 August, 2022; v1 submitted 11 October, 2021; originally announced October 2021.

Journal ref: Phys. Rev. B 106, 064503 (2022)

Radio-frequency C-V measurements with sub-attofarad sensitivity

Authors: Filip K. Malinowski, Lin Han, Damaz de Jong, Ji-Yin Wang, Christian G. Prosko, Ghada Badawy, Sasa Gazibegovic, Yu Liu, Peter Krogstrup, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Jonne V. Koski

Abstract: We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device. Consequently, tuning the carrier density in the conducting channel of the device affects the resonance frequency, quantitatively reflecting its capacitance. We test th… ▽ More We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device. Consequently, tuning the carrier density in the conducting channel of the device affects the resonance frequency, quantitatively reflecting its capacitance. We test the measurement method on InSb and InAs nanowires at dilution-refrigerator temperatures. The measured capacitances are consistent with those inferred from the periodicity of the Coulomb blockade of quantum dots realized in the same devices. In an implementation of the resonator using an off-chip superconducting spiral inductor we find sensitivity values reaching down to 75~zF/$\sqHz$ at 1~kHz measurement bandwidth, and noise down to 0.45~aF at 1~Hz bandwidth. We estimate the sensitivity of the method for a number of other implementations. In particular we predict typical sensitivity of about 40~zF/$\sqHz$ at room temperature with a resonator comprised of off-the-shelf components. Of several proposed applications, we demonstrate two: the capacitance measurement of several identical 80~nm-wide gates with a single resonator, and the field-effect mobility measurement of an individual nanowire with the gate capacitance measured in-situ. △ Less

Submitted 7 October, 2021; originally announced October 2021.

Journal ref: Phys. Rev. Applied 18 (2022) 024032

Delocalized states in three-terminal superconductor-semiconductor nanowire devices

Authors: P. Yu, B. D. Woods, J. Chen, G. Badawy, E. P. A. M. Bakkers, T. D. Stanescu, S. M. Frolov

Abstract: We fabricate three-terminal hybrid devices with a nanowire segment proximitized by a superconductor, and with two tunnel probe contacts on either side of that segment. We perform simultaneous tunneling measurements on both sides. We identify some states as delocalized above-gap states observed on both ends, and some states as localized near one of the tunnel barriers. Delocalized states can be tra… ▽ More We fabricate three-terminal hybrid devices with a nanowire segment proximitized by a superconductor, and with two tunnel probe contacts on either side of that segment. We perform simultaneous tunneling measurements on both sides. We identify some states as delocalized above-gap states observed on both ends, and some states as localized near one of the tunnel barriers. Delocalized states can be traced from zero to finite magnetic fields beyond 0.5 T. In the parameter regime of delocalized states, we search for correlated subgap resonances required by the Majorana zero mode hypothesis. While both sides exhibit ubiquitous low-energy features at high fields, no correlation is inferred. Simulations using a one-dimensional effective model suggest that delocalized states may belong to lower one-dimensional subbands, while the localized states originate from higher subbands. To avoid localization in higher subbands, disorder may need to be further reduced to realize Majorana zero modes. △ Less

Submitted 30 January, 2023; v1 submitted 16 August, 2021; originally announced August 2021.

Comments: Original data available at https://zenodo.org/record/3958243

Journal ref: SciPost Phys. 15, 005 (2023)

Supercurrent parity-meter in a nanowire Cooper-pair transistor

Authors: Ji-Yin Wang, Constantin Schrade, Vukan Levajac, David van Driel, Kongyi Li, Sasa Gazibegovic, Ghada Badawy, Roy L. M. Op het Veld, Joon Sue Lee, Mihir Pendharkar, Connor P. Dempsey, Chris J. Palmstrøm, Erik P. A. M. Bakkers, Liang Fu, Leo P. Kouwenhoven, Jie Shen

Abstract: We study a Cooper-pair transistor realized by two Josephson weak links that enclose a superconducting island in an InSb-Al hybrid nanowire. When the nanowire is subject to a magnetic field, isolated subgap levels arise in the superconducting island and, due to the Coulomb blockade,mediate a supercurrent by coherent co-tunneling of Cooper pairs. We show that the supercurrent resulting from such co-… ▽ More We study a Cooper-pair transistor realized by two Josephson weak links that enclose a superconducting island in an InSb-Al hybrid nanowire. When the nanowire is subject to a magnetic field, isolated subgap levels arise in the superconducting island and, due to the Coulomb blockade,mediate a supercurrent by coherent co-tunneling of Cooper pairs. We show that the supercurrent resulting from such co-tunneling events exhibits, for low to moderate magnetic fields, a phase offset that discriminates even and odd charge ground states on the superconducting island. Notably,this phase offset persists when a subgap state approaches zero energy and, based on theoretical considerations, permits parity measurements of subgap states by supercurrent interferometry. Such supercurrent parity measurements could, in a new series of experiments, provide an alternative approach for manipulating and protecting quantum information stored in the isolated subgap levels of superconducting islands. △ Less

Submitted 18 July, 2021; originally announced July 2021.

Journal ref: Science Advances 8, eabm9896 (2022)

Triple Andreev dot chains in semiconductor nanowires

Authors: Hao Wu, Po Zhang, John P. T. Stenger, Zhaoen Su, Jun Chen, Ghada Badawy, Sasa Gazibegovic, Erik P. A. M. Bakkers, Sergey M. Frolov

Abstract: Kitaev chain is a theoretical model of a one-dimensional topological superconductor with Majorana zero modes at the two ends of the chain. With the goal of emulating this model, we build a chain of three quantum dots in a semiconductor nanowire. We observe Andreev bound states in each of the three dots and study their magnetic field and gate voltage dependence. Theory indicates that triple dot sta… ▽ More Kitaev chain is a theoretical model of a one-dimensional topological superconductor with Majorana zero modes at the two ends of the chain. With the goal of emulating this model, we build a chain of three quantum dots in a semiconductor nanowire. We observe Andreev bound states in each of the three dots and study their magnetic field and gate voltage dependence. Theory indicates that triple dot states acquire Majorana polarization when Andreev states in all three dots reach zero energy in a narrow range of magnetic field. In our device Andreev states in one of the dots reach zero energy at a lower field than in other two, placing the Majorana regime out of reach. Devices with greater uniformity or with independent control over superconductor-semiconductor coupling should can realize the Kitaev chain with high yield. Due to its overall tunability and design flexibility the quantum dot system remains promising for quantum simulation of interesting models and in particular for modular topological quantum devices. △ Less

Submitted 31 August, 2021; v1 submitted 18 May, 2021; originally announced May 2021.

Comments: Full data and code are available on Zenodo https://zenodo.org/communities/frolovlab/

Universal Platform for Scalable Semiconductor-Superconductor Nanowire Networks

Authors: Jason Jung, Roy L. M. Op het Veld, Rik Benoist, Orson A. H. van der Molen, Carlo Manders, Marcel A. Verheijen, Erik P. A. M. Bakkers

Abstract: Semiconductor-superconductor hybrids are commonly used in research on topological quantum computation. Traditionally, top-down approaches involving dry or wet etching are used to define the device geometry. These often aggressive processes risk causing damage to material surfaces, giving rise to scattering sites particularly problematic for quantum applications. Here, we propose a method that main… ▽ More Semiconductor-superconductor hybrids are commonly used in research on topological quantum computation. Traditionally, top-down approaches involving dry or wet etching are used to define the device geometry. These often aggressive processes risk causing damage to material surfaces, giving rise to scattering sites particularly problematic for quantum applications. Here, we propose a method that maintains the flexibility and scalability of selective area grown nanowire networks while omitting the necessity of etching to create hybrid segments. Instead, it takes advantage of directional growth methods and uses bottom-up grown InP structures as shadowing objects to obtain selective metal deposition. The ability to lithographically define the position and area of these objects, and to grow a predefined height, ensures precise control of the shadowed region. We demonstrate the approach by growing InSb nanowire networks with well-defined Al and Pb islands. Cross-section cuts of the nanowires reveal a sharp, oxide-free interface between semiconductor and superconductor. By growing InP structures on both sides of in-plane nanowires, a combination of Pt and Pb can independently be shadow deposited, enabling a scalable and reproducible in-situ device fabrication. The semiconductor-superconductor nanostructures resulting from this approach are at the forefront of material development for Majorana based experiments. △ Less

Submitted 12 May, 2021; originally announced May 2021.

In-plane selective area InSb-Al nanowire quantum networks

Authors: Roy L. M. Op het Veld, Di Xu, Vanessa Schaller, Marcel A. Verheijen, Stan M. E. Peters, Jason Jung, Chuyao Tong, Qingzhen Wang, Michiel W. A. de Moor, Bart Hesselmann, Kiefer Vermeulen, Jouri D. S. Bommer, Joon Sue Lee, Andrey Sarikov, Mihir Pendharkar, Anna Marzegalli, Sebastian Koelling, Leo P. Kouwenhoven, Leo Miglio, Chris J. Palmstrøm, Hao Zhang, Erik P. A. M. Bakkers

Abstract: Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network of nanowires. Here, we develop an in-plane selective-area growth technique for InSb-Al semiconductor-superconductor nanowire networks with excellent quantum tr… ▽ More Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network of nanowires. Here, we develop an in-plane selective-area growth technique for InSb-Al semiconductor-superconductor nanowire networks with excellent quantum transport properties. Defect-free transport channels in InSb nanowire networks are realized on insulating, but heavily mismatched InP substrates by 1) full relaxation of the lattice mismatch at the nanowire/substrate interface on a (111)B substrate orientation, 2) nucleation of a complete network from a single nucleation site, which is accomplished by optimizing the surface diffusion length of the adatoms. Essential quantum transport phenomena for topological quantum computing are demonstrated in these structures including phase-coherent transport up to 10 $μ$m and a hard superconducting gap accompanied by 2$e$-periodic Coulomb oscillations with an Al-based Cooper pair island integrated in the nanowire network. △ Less

Submitted 11 March, 2021; originally announced March 2021.

Comments: Data repository is available at https://doi.org/10.5281/zenodo.4589484 . Author version of the text before peer review, while see DOI for the published version

Journal ref: Commun. Phys. 3, 59 (2020)

The 2021 Quantum Materials Roadmap

Authors: Feliciano Giustino, ** Hong Lee, Felix Trier, Manuel Bibes, Stephen M Winter, Roser Valentí, Young-Woo Son, Louis Taillefer, Christoph Heil, Adriana I. Figueroa, Bernard Plaçais, QuanSheng Wu, Oleg V. Yazyev, Erik P. A. M. Bakkers, Jesper Nygård, Pol Forn-Diaz, Silvano De Franceschi, J. W. McIver, L. E. F. Foa Torres, Tony Low, Anshuman Kumar, Regina Galceran, Sergio O. Valenzuela, Marius V. Costache, Aurélien Manchon , et al. (4 additional authors not shown)

Abstract: In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi… ▽ More In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to sha** a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Comments: 93 pages, 27 figures

Journal ref: J. Phys. Mater. 3 042006 (2020)

Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices

Authors: Hao Zhang, Michiel W. A. de Moor, Jouri D. S. Bommer, Di Xu, Guanzhong Wang, Nick van Loo, Chun-Xiao Liu, Sasa Gazibegovic, John A. Logan, Diana Car, Roy L. M. Op het Veld, Petrus J. van Veldhoven, Sebastian Koelling, Marcel A. Verheijen, Mihir Pendharkar, Daniel J. Pennachio, Borzoyeh Shojaei, Joon Sue Lee, Chris J. Palmstrøm, Erik P. A. M. Bakkers, S. Das Sarma, Leo P. Kouwenhoven

Abstract: We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order… ▽ More We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes. △ Less

Submitted 27 January, 2021; originally announced January 2021.

Comments: This manuscript replaces "Quantized Majorana conductance" Nature 556, 74 (2018). Technical errors in Nature 556, 74 (2018) are corrected and the original claims now have a wider interpretation. A Retraction Note (in preparation) on Nature 556, 74 (2018) will include a detailed description of errors and the corrected data analyses

Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1-x Alloys in Nanowires by Raman Spectroscopy

Authors: Diego de Matteis, Marta De Luca, Elham M. T. Fadaly, Marcel A. Verheijen, Miquel Lopez-Suarez, Riccardo Rurali, Erik P. A. M. Bakkers, Ilaria Zardo

Abstract: Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e. high temperature and/or high pressure. For group IV semiconductors this means access to hexagonal-phase SixGe1-x nanostructures (with a 2H type of symmetry), which are predicted to have a direct band gap for x up to 0.5 - 0.6 and would allow the reali… ▽ More Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e. high temperature and/or high pressure. For group IV semiconductors this means access to hexagonal-phase SixGe1-x nanostructures (with a 2H type of symmetry), which are predicted to have a direct band gap for x up to 0.5 - 0.6 and would allow the realization of easily processable optoelectronic devices. Exploiting the quasi-perfect lattice matching between GaAs and Ge, we synthesized hexagonal phase GaAs-Ge and GaAs-SixGe1-x core-shell nanowires with x up to 0.59. By combining position-, polarization- and excitation wavelength-dependent u-Raman spectroscopy studies with first-principles calculations, we explore the full lattice dynamics of these materials. In particular, by obtaining frequency-composition calibration curves for the phonon modes, investigating the dependence of the phononic modes on the position along the nanowire, and exploiting resonant Raman conditions to unveil the coupling between lattice vibrations and electronic transitions, we lay the grounds for a deep understanding of the phononic properties of 2H-SixGe1-x nanostructured alloys and of their relationship with crystal quality, chemical composition, and electronic band structure. △ Less

Submitted 20 January, 2021; originally announced January 2021.

Journal ref: ACS Nano 14 (2020) 6845-6856

Full parity phase diagram of a proximitized nanowire island

Authors: J. Shen, G. W. Winkler, F. Borsoi, S. Heedt, V. Levajac, J. Y. Wang, D. van Driel, D. Bouman, S. Gazibegovic, R. L. M. Op Het Veld, D. Car, J. A. Logan, M. Pendharkar, C. J. Palmstrom, E. P. A. M. Bakkers, L. P. Kouwenhoven, B. van Heck

Abstract: We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity changes from $2e$ to $1e$ at a gate-dependent value of the magnetic field, $B^*$, decreasing from a high to a low limit upon increasing the gate voltage. In the gate voltage region between the two limits, which our nume… ▽ More We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity changes from $2e$ to $1e$ at a gate-dependent value of the magnetic field, $B^*$, decreasing from a high to a low limit upon increasing the gate voltage. In the gate voltage region between the two limits, which our numerical simulations indicate to be the most promising for locating Majorana zero modes, we observe correlated oscillations of peak spacings and heights. For positive gate voltages, the $2e$-$1e$ transition with low $B^*$ is due to the presence of non-topological states whose energy quickly disperses below the charging energy due to the orbital effect of the magnetic field. Our measurements demonstrate the importance of a careful exploration of the entire available phase space of a proximitized nanowire as a prerequisite to define future topological qubits. △ Less

Submitted 3 August, 2021; v1 submitted 18 December, 2020; originally announced December 2020.

Comments: 5 pages, 4 figures plus supplementary. v2: improved manuscript. v3: published version. Raw data and source code available at https://doi.org/10.4121/13333451.v4

Journal ref: Phys. Rev. B 104, 045422 (2021)

Single-shot fabrication of semiconducting-superconducting nanowire devices

Authors: Francesco Borsoi, Grzegorz P. Mazur, Nick van Loo, Michał P. Nowak, Léo Bourdet, Kongyi Li, Svetlana Korneychuk, Alexandra Fursina, Elvedin Memisevic, Ghada Badawy, Sasa Gazibegovic, Kevin van Hoogdalem, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Sebastian Heedt, Marina Quintero-Pérez

Abstract: Semiconducting-superconducting nanowires attract widespread interest owing to the possible presence of non-abelian Majorana zero modes, which hold promise for topological quantum computation. However, the search for Majorana signatures is challenging because reproducible hybrid devices with desired nanowire lengths and material parameters need to be reliably fabricated to perform systematic explor… ▽ More Semiconducting-superconducting nanowires attract widespread interest owing to the possible presence of non-abelian Majorana zero modes, which hold promise for topological quantum computation. However, the search for Majorana signatures is challenging because reproducible hybrid devices with desired nanowire lengths and material parameters need to be reliably fabricated to perform systematic explorations in gate voltages and magnetic fields. Here, we exploit a fabrication platform based on shadow walls that enables the in-situ, selective and consecutive depositions of superconductors and normal metals to form normal-superconducting junctions. Crucially, this method allows to realize devices in a single shot, eliminating fabrication steps after the synthesis of the fragile semiconductor/superconductor interface. At the atomic level, all investigated devices reveal a sharp and defect-free semiconducting-superconducting interface and, correspondingly, we measure electrically a hard induced superconducting gap. While our advancement is of crucial importance for enhancing the yield of complex hybrid devices, it also offers a straightforward route to explore new material combinations for hybrid devices. △ Less

Submitted 14 September, 2020; originally announced September 2020.

Shadow-wall lithography of ballistic superconductor-semiconductor quantum devices

Authors: Sebastian Heedt, Marina Quintero-Pérez, Francesco Borsoi, Alexandra Fursina, Nick van Loo, Grzegorz P. Mazur, Michał P. Nowak, Mark Ammerlaan, Kongyi Li, Svetlana Korneychuk, Jie Shen, May An Y. van de Poll, Ghada Badawy, Sasa Gazibegovic, Kevin van Hoogdalem, Erik P. A. M. Bakkers, Leo P. Kouwenhoven

Abstract: The realization of a topological qubit calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of novel quantum devices and ultimately topological qubits whi… ▽ More The realization of a topological qubit calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of novel quantum devices and ultimately topological qubits while eliminating many fabrication steps such as lithography and etching. This is critical to preserve the integrity and homogeneity of the fragile hybrid interfaces. The approach simplifies the reproducible fabrication of devices with a hard induced superconducting gap and ballistic normal-/superconductor junctions. Large gate-tunable supercurrents and high-order multiple Andreev reflections manifest the exceptional coherence of the resulting nanowire Josephson junctions. Our approach enables, in particular, the realization of 3-terminal devices, where zero-bias conductance peaks emerge in a magnetic field concurrently at both boundaries of the one-dimensional hybrids. △ Less

Submitted 28 July, 2020; originally announced July 2020.

Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets

Authors: Y. Jiang, E. J. de Jong, V. van de Sande, S. Gazibegovic, G. Badawy, E. P. A. M. Bakkers, S. M. Frolov

Abstract: We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local maximum or local minimum at zero magnetic field. Switching of microstrip magnetizations then results in positive or negative hysteretic dependence as conductance m… ▽ More We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local maximum or local minimum at zero magnetic field. Switching of microstrip magnetizations then results in positive or negative hysteretic dependence as conductance maxima or minima shift with respect to the global external field. Stray fields are found to be in the range of tens of millitesla, comparable to the scale over which the nanowire magnetoresistance develops. We observe that the stray field signal is similar to that obtained in devices with ferromagnetic contacts (spin valves). We perform micromagnetic simulations which are in reasonable agreement with the experiment. The use of locally varying magnetic fields may bring new ideas for Majorana circuits in which nanowire networks require control over field orientation at the nanoscale. △ Less

Submitted 12 July, 2020; originally announced July 2020.

Comments: Data and code available on github via https://github.com/frolovgroup/Yifan-Jiang

Strong spin-orbit interaction and $g$-factor renormalization of hole spins in Ge/Si nanowire quantum dots

Authors: F. N. M. Froning, M. J. Rančić, B. Hetényi, S. Bosco, M. K. Rehmann, A. Li, E. P. A. M. Bakkers, F. A. Zwanenburg, D. Loss, D. M. Zumbühl, F. R. Braakman

Abstract: The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit interaction that has been predicted to be both strong and electrically tunable, making them a particularly promising platform for research in these fields. We exp… ▽ More The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit interaction that has been predicted to be both strong and electrically tunable, making them a particularly promising platform for research in these fields. We experimentally determine the strength of spin-orbit interaction of hole spins confined to a double quantum dot in a Ge/Si nanowire by measuring spin-mixing transitions inside a regime of spin-blockaded transport. We find a remarkably short spin-orbit length of $\sim$65 nm, comparable to the quantum dot length and the interdot distance. We additionally observe a large orbital effect of the applied magnetic field on the hole states, resulting in a large magnetic field dependence of the spin-mixing transition energies. Strikingly, together with these orbital effects, the strong spin-orbit interaction causes a significant enhancement of the $g$-factor with magnetic field.The large spin-orbit interaction strength demonstrated is consistent with the predicted direct Rashba spin-orbit interaction in this material system and is expected to enable ultrafast Rabi oscillations of spin qubits and efficient qubit-qubit interactions, as well as provide a platform suitable for studying Majorana zero modes. △ Less

Submitted 8 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Research 3, 013081 (2021)

Transmission phase read-out of a large quantum dot in a nanowire interferometer

Authors: Francesco Borsoi, Kun Zuo, Sasa Gazibegovic, Roy L. M. Op het Veld, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Sebastian Heedt

Abstract: Detecting the transmission phase of a quantum dot via interferometry can reveal the symmetry of the orbitals and details of electron transport. Crucially, interferometry will enable the read-out of topological qubits based on one-dimensional nanowires. However, measuring the transmission phase of a quantum dot in a nanowire has not yet been established. Here, we exploit recent breakthroughs in the… ▽ More Detecting the transmission phase of a quantum dot via interferometry can reveal the symmetry of the orbitals and details of electron transport. Crucially, interferometry will enable the read-out of topological qubits based on one-dimensional nanowires. However, measuring the transmission phase of a quantum dot in a nanowire has not yet been established. Here, we exploit recent breakthroughs in the growth of one-dimensional networks and demonstrate interferometric read-out in a nanowire-based architecture. In our two-path interferometer, we define a quantum dot in one branch and use the other path as a reference arm. We observe Fano resonances stemming from the interference between electrons that travel through the reference arm and undergo resonant tunnelling in the quantum dot. Between consecutive Fano peaks, the transmission phase exhibits phase lapses that are affected by the presence of multiple trajectories in the interferometer. These results provide critical insights for the design of future topological qubits. △ Less

Submitted 25 June, 2020; originally announced June 2020.

Comments: to be published in Nature Communications

Journal ref: Nat. Commun. 11, 3666 (2020)

Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch

Authors: F. N. M. Froning, L. C. Camenzind, O. A. H. van der Molen, A. Li, E. P. A. M. Bakkers, D. M. Zumbühl, F. R. Braakman

Abstract: A key challenge in quantum computation is the implementation of fast and local qubit control while simultaneously maintaining coherence. Qubits based on hole spins offer, through their strong spin-orbit interaction, a way to implement fast quantum gates. Strikingly, for hole spins in one-dimensional germanium and silicon devices, the spin-orbit interaction has been predicted to be exceptionally st… ▽ More A key challenge in quantum computation is the implementation of fast and local qubit control while simultaneously maintaining coherence. Qubits based on hole spins offer, through their strong spin-orbit interaction, a way to implement fast quantum gates. Strikingly, for hole spins in one-dimensional germanium and silicon devices, the spin-orbit interaction has been predicted to be exceptionally strong yet highly tunable with gate voltages. Such electrical control would make it possible to switch on demand between qubit idling and manipulation modes. Here, we demonstrate ultrafast and universal quantum control of a hole spin qubit in a germanium/silicon core/shell nanowire, with Rabi frequencies of several hundreds of megahertz, corresponding to spin-flip** times as short as ~1 ns - a new record for a single-spin qubit. Next, we show a large degree of electrical control over the Rabi frequency, Zeeman energy, and coherence time - thus implementing a switch toggling from a rapid qubit manipulation mode to a more coherent idling mode. We identify an exceptionally strong but gate-tunable spin-orbit interaction as the underlying mechanism, with a short associated spin-orbit length that can be tuned over a large range down to 3 nm for holes of heavy-hole mass. Our work demonstrates a spin-orbit qubit switch and establishes hole spin qubits defined in one-dimensional germanium/silicon nanostructures as a fast and highly tunable platform for quantum computation. △ Less

Submitted 3 March, 2021; v1 submitted 19 June, 2020; originally announced June 2020.

Journal ref: Nature Nanotechnology (2021)

Non-Majorana states yield nearly quantized conductance in superconductor-semiconductor nanowire devices

Authors: P. Yu, J. Chen, M. Gomanko, G. Badawy, E. P. A. M. Bakkers, K. Zuo, V. Mourik, S. M. Frolov

Abstract: Conductance at zero source-drain voltage bias in InSb nanowire/NbTiN superconductor devices exhibits peaks that are close to a quantized value of $2e^2/h$. The nearly quantized resonances evolve in the tunnel barrier strength, magnetic field and magnetic field orientation in a way consistent with Majorana zero modes. Our devices feature two tunnel probes on both ends of the nanowire separated by a… ▽ More Conductance at zero source-drain voltage bias in InSb nanowire/NbTiN superconductor devices exhibits peaks that are close to a quantized value of $2e^2/h$. The nearly quantized resonances evolve in the tunnel barrier strength, magnetic field and magnetic field orientation in a way consistent with Majorana zero modes. Our devices feature two tunnel probes on both ends of the nanowire separated by a 400 nm nanowire segment covered by the superconductor. We only find nearly quantized zero bias peaks localized to one end of the nanowire, while conductance dips are observed for the same parameters on the other end. This undermines the Majorana explanation as Majorana modes must come in pairs. We do identify states delocalized from end to end near zero magnetic field and at higher electron density, which is not in the basic Majorana regime. We lay out procedures for assessing the nonlocality of subgap wavefunctions and provide a classification of nanowire bound states based on their localization. △ Less

Submitted 18 April, 2020; originally announced April 2020.

Comments: Figures can be interacted with via https://mybinder.org/v2/gh/frolovgroup/Quantized-Zero-Bias-Peaks-from-trivial-states-in-Majorana-nanowire-devices/329582d89729de51f7b0177d2774bd1bc3e75e53

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

Authors: Felix Jekat, Benjamin Pestka, Diana Car, Saša Gazibegović, Kilian Flöhr, Sebastian Heedt, Jürgen Schubert, Marcus Liebmann, Erik P. A. M. Bakkers, Thomas Schäpers, Markus Morgenstern

Abstract: We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to… ▽ More We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{μeV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing potential fluctuations of $\sim 1\,μ\mathrm{eV}/\mathrm{\sqrt{Hz}}$ at 1\,Hz. This makes h-BN the dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III-V nanowires. The extracted values are similar to state-of-the art quantum dots within Si/SiGe and Si/SiO${_2}$ systems. △ Less

Submitted 22 June, 2020; v1 submitted 23 January, 2020; originally announced January 2020.

Journal ref: Appl. Phys. Lett. 116, 253101 (2020)

Parity-preserving and magnetic field resilient superconductivity in indium antimonide nanowires with tin shells

Authors: M. Pendharkar, B. Zhang, H. Wu, A. Zarassi, P. Zhang, C. P. Dempsey, J. S. Lee, S. D. Harrington, G. Badawy, S. Gazibegovic, J. Jung, A. -H. Chen, M. A. Verheijen, M. Hocevar, E. P. A. M. Bakkers, C. J. Palmstrøm, S. M. Frolov

Abstract: We study bottom-up grown semiconductor indium antimonide nanowires that are coated with shells of tin. The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are prepared by in-situ shadowing of nanowires using nearby nanowires as well as flakes, resulting in etch-free junctions. Tin is found to induce a hard superconducti… ▽ More We study bottom-up grown semiconductor indium antimonide nanowires that are coated with shells of tin. The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are prepared by in-situ shadowing of nanowires using nearby nanowires as well as flakes, resulting in etch-free junctions. Tin is found to induce a hard superconducting gap in the range 600-700 micro-eV. Superconductivity persists up to 4 T in magnetic field. A tin island exhibits the coveted two-electron charging effect, a hallmark of charge parity stability. The findings open avenues for superconducting and topological quantum circuits based on new superconductor-semiconductor combinations. △ Less

Submitted 11 December, 2019; originally announced December 2019.

Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys

Authors: E. M. T. Fadaly, A. Dijkstra, J. R. Suckert, D. Ziss, M. A. J. v. Tilburg, C. Mao, Y. Ren, V. T. v. Lange, S. Kölling, M. A. Verheijen, D. Busse, C. Rödl, J. Furthmüller, F. Bechstedt, J. Stangl, J. J. Finley, S. Botti, J. E. M. Haverkort, E. P. A. M. Bakkers

Abstract: Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades… ▽ More Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades and, despite tremendous efforts, it has remained elusive. Here, we demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys. We measure a subnanosecond, temperature-insensitive radiative recombination lifetime and observe a similar emission yield to direct bandgap III-V semiconductors. Moreover, we demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range, while preserving a direct bandgap. Our experimental findings are shown to be in excellent quantitative agreement with the ab initio theory. Hexagonal SiGe embodies an ideal material system to fully unite electronic and optoelectronic functionalities on a single chip, opening the way towards novel device concepts and information processing technologies. △ Less

Submitted 2 November, 2019; originally announced November 2019.

Comments: 25 pages,5 main figures, 7 supplementary figures