Showing 1–3 of 3 results for author: Bakker, J P R

Long-range fluctuations of random potential landscape as a mechanism of 1/f noise in hydrogenated amorphous silicon

Authors: B. V. Fine, J. P. R. Bakker, J. I. Dijkhuis

Abstract: We describe a mechanism, which links the long-range potential fluctuations induced by charged defects to the low frequency resistance noise widely known as 1/f noise. This mechanism is amenable to the first principles microscopic calculation of the noise spectrum, which includes the absolute noise intensity. We have performed such a calculation for the thin films of hydrogenated amorphous silico… ▽ More We describe a mechanism, which links the long-range potential fluctuations induced by charged defects to the low frequency resistance noise widely known as 1/f noise. This mechanism is amenable to the first principles microscopic calculation of the noise spectrum, which includes the absolute noise intensity. We have performed such a calculation for the thin films of hydrogenated amorphous silicon (a-Si:H) under the condition that current flows perpendicular to the plane of the films, and found a very good agreement between the theoretical noise intensity and the measured one. The mechanism described is quite general. It should be present in a broad class of systems containing poorly screened charged defects. △ Less

Submitted 27 July, 2007; originally announced July 2007.

Comments: 14 pages, 3 figures, final version

Journal ref: Fluctuations and Noise Letters, v. 5, pp. L443-L456 (2005)

New experimental evidence for the role of long-range potential fluctuations in the mechanism of 1/f noise in a-Si:H

Authors: J. P. R. Bakker, P. J. S. van Capel, B. V. Fine, J. I. Dijkhuis

Abstract: We present measurements of 1/f resistance noise in three different films of amorphous silicon (a-Si) in the presense of a transverse electric current. Two of these films have n-i-n sandwich structure - in one of them all three layers were hydrogenated; in the other one only the n-layers were hydrogenated, while the intrinsic layer was deuterated. The third film had p-i-p structure with all three… ▽ More We present measurements of 1/f resistance noise in three different films of amorphous silicon (a-Si) in the presense of a transverse electric current. Two of these films have n-i-n sandwich structure - in one of them all three layers were hydrogenated; in the other one only the n-layers were hydrogenated, while the intrinsic layer was deuterated. The third film had p-i-p structure with all three layers hydrogenated. The experimental spectra were found to be in a very good quantitative agreement with theoretical predictions, which were based on the mechanism involving long-range fluctuations of the Coulomb potential created by charged defects (see cond-mat/0210680). △ Less

Submitted 20 October, 2003; originally announced October 2003.

Comments: 7 pages, 3 figures, to appear in J. Non-Cryst. Solids

Journal ref: J. Non-Cryst. Solids, v.338-340, p.310 (2004)

Long-range potential fluctuations and 1/f noise in hydrogenated amorphous silicon

Authors: B. V. Fine, J. P. R. Bakker, J. I. Dijkhuis

Abstract: We present a microscopic theory of the low-frequency voltage noise (known as "1/f" noise) in micrometer-thick films of hydrogenated amorphous silicon. This theory traces the noise back to the long-range fluctuations of the Coulomb potential produced by deep defects, thereby predicting the absolute noise intensity as a function of the distribution of defect activation energies. The predictions of… ▽ More We present a microscopic theory of the low-frequency voltage noise (known as "1/f" noise) in micrometer-thick films of hydrogenated amorphous silicon. This theory traces the noise back to the long-range fluctuations of the Coulomb potential produced by deep defects, thereby predicting the absolute noise intensity as a function of the distribution of defect activation energies. The predictions of this theory are in very good agreement with our own experiments in terms of both the absolute intensity and the temperature dependence of the noise spectra. △ Less

Submitted 20 October, 2003; v1 submitted 30 October, 2002; originally announced October 2002.

Comments: 8 pages, 3 figures, several new parts and one new figure are added, but no conceptual revisions

Journal ref: Phys. Rev. B, Vol. 68, p. 125207 (2003)