Showing 1–3 of 3 results for author: Bakir, B B

Hong-Ou-Mandel interference between independent III-V on silicon waveguide integrated lasers

Authors: C. Agnesi, B. Da Lio, D. Cozzolino, L. Cardi, B. Ben Bakir, K. Hassan, A. Della Frera, A. Ruggeri, A. Giudice, G. Vallone, P. Villoresi, A. Tosi, K. Rottwitt, Y. Ding, D. Bacco

Abstract: The versatility of silicon photonic integrated circuits has led to a widespread usage of this platform for quantum information based applications, including Quantum Key Distribution (QKD). However, the integration of simple high repetition rate photon sources is yet to be achieved. The use of weak-coherent pulses (WCPs) could represent a viable solution. For example, Measurement Device Independent… ▽ More The versatility of silicon photonic integrated circuits has led to a widespread usage of this platform for quantum information based applications, including Quantum Key Distribution (QKD). However, the integration of simple high repetition rate photon sources is yet to be achieved. The use of weak-coherent pulses (WCPs) could represent a viable solution. For example, Measurement Device Independent QKD (MDI-QKD) envisions the use of WCPs to distill a secret key immune to detector side channel attacks at large distances. Thus, the integration of III-V lasers on silicon waveguides is an interesting prospect for quantum photonics. Here, we report the experimental observation of Hong-Ou-Mandel interference with 46\pm 2% visibility between WCPs generated by two independent III-V on silicon waveguide integrated lasers. This quantum interference effect is at the heart of many applications, including MDI-QKD. Our work represents a substantial first step towards an implementation of MDI-QKD fully integrated in silicon, and could be beneficial for other applications such as standard QKD and novel quantum communication protocols. △ Less

Submitted 17 January, 2019; originally announced January 2019.

Comments: 5 pages, 3 figures

Journal ref: Optics Letters Vol. 44, Issue 2, pp. 271-274 (2019)

High Kerr nonlinearity hydrogenated amorphous silicon nanowires with low two photon absorption and high optical stability

Authors: C. Grillet, L. Carletti, C. Monat, P. Grosse, B. Ben Bakir, S. Menezo, J. M. Fedeli, David J. Moss

Abstract: We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re(γ) = 1200W-1m-1. We observe no degradation in these parameters over the entire course of our experiments including systematic study under operation at 2 W coupled peak power (i.e. ~2GW/cm2) over timescales of at least an hour. We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re(γ) = 1200W-1m-1. We observe no degradation in these parameters over the entire course of our experiments including systematic study under operation at 2 W coupled peak power (i.e. ~2GW/cm2) over timescales of at least an hour. △ Less

Submitted 11 May, 2014; originally announced May 2014.

Comments: 8 pages, 7 figures, 33 references, 1 table. arXiv admin note: substantial text overlap with arXiv:1405.2392

Journal ref: optics express volume 20 pages 22609 - 22615 (2012)

Amorphous Silicon Nanowires with Low Two-Photon Absorption, High Nonlinearity and Good Stability

Authors: C. Grillet, L. Carletti, C. Monat, P. Grosse, B. Ben Bakir, S. Menezo, J. M. Fedeli, D. J. Moss

Abstract: We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re(γ) = 1200W-1m-1. We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re(γ) = 1200W-1m-1. △ Less

Submitted 10 May, 2014; originally announced May 2014.

Comments: 4 pages, 5 figures, 25 references, Australian Conference on Optical Fiber Technology (ACOFT), Sydney, December (2012)