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Transform-limited photons from a coherent tin-vacancy spin in diamond
Authors:
Matthew E. Trusheim,
Benjamin **ault,
Noel H Wan,
Mustafa Gundogan,
Lorenzo De Santis,
Romain Debroux,
Dorian Gangloff,
Carola Purser,
Kevin C. Chen,
Michael Walsh,
Joshua J. Rose,
Jonas N. Becker,
Benjamin Lienhard,
Eric Bersin,
Ioannis Paradeisanos,
Gang Wang,
Dominika Lyzwa,
Alejandro R-P. Montblanch,
Girish Malladi,
Hassaram Bakhru,
Andrea C. Ferrari,
Ian Walmsley,
Mete Atature,
Dirk Englund
Abstract:
Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving an…
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Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flip** transitions, characterize transition linewidths, measure electron spin lifetimes and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phononlimited with an exponential temperature scaling leading to $T_1$ $>$ 10 ms, and the coherence time, $T_2$ reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.
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Submitted 6 January, 2020; v1 submitted 19 November, 2018;
originally announced November 2018.
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Lead-Related Quantum Emitters in Diamond
Authors:
Matthew E. Trusheim,
Noel H. Wan,
Kevin C. Chen,
Christopher J. Ciccarino,
Ravishankar Sundararaman,
Girish Malladi,
Eric Bersin,
Michael Walsh,
Benjamin Lienhard,
Hassaram Bakhru,
Prineha Narang,
Dirk Englund
Abstract:
We report on quantum emission from Pb-related color centers in diamond following ion implantation and high temperature vacuum annealing. First-principles calculations predict a negatively-charged Pb-vacancy center in a split-vacancy configuration, with a zero-phonon transition around 2.3 eV. Cryogenic photoluminescence measurements performed on emitters in nanofabricated pillars reveal several tra…
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We report on quantum emission from Pb-related color centers in diamond following ion implantation and high temperature vacuum annealing. First-principles calculations predict a negatively-charged Pb-vacancy center in a split-vacancy configuration, with a zero-phonon transition around 2.3 eV. Cryogenic photoluminescence measurements performed on emitters in nanofabricated pillars reveal several transitions, including a prominent doublet near 520 nm. The splitting of this doublet, 2 THz, exceeds that reported for other group-IV centers. These observations are consistent with the PbV center, which is expected to have the combination of narrow optical transitions and stable spin states, making it a promising system for quantum network nodes.
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Submitted 30 May, 2018;
originally announced May 2018.
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Efficient Extraction of Light from a Nitrogen-Vacancy Center in a Diamond Parabolic Reflector
Authors:
Noel H. Wan,
Brendan J. Shields,
Donggyu Kim,
Sara Mouradian,
Benjamin Lienhard,
Michael Walsh,
Hassaram Bakhru,
Tim Schröder,
Dirk Englund
Abstract:
Quantum emitters in solids are being developed for a range of quantum technologies, including quantum networks, computing, and sensing. However, a remaining challenge is the poor photon collection due to the high refractive index of most host materials. Here we overcome this limitation by introducing monolithic parabolic reflectors as an efficient geometry for broadband photon extraction from quan…
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Quantum emitters in solids are being developed for a range of quantum technologies, including quantum networks, computing, and sensing. However, a remaining challenge is the poor photon collection due to the high refractive index of most host materials. Here we overcome this limitation by introducing monolithic parabolic reflectors as an efficient geometry for broadband photon extraction from quantum emitter and experimentally demonstrate this device for the nitrogen-vacancy (NV) center in diamond. Simulations indicate a photon collection efficiency exceeding 75% across the visible spectrum and experimental devices, fabricated using a high-throughput gray-scale lithography process, demonstrate a photon extraction efficiency of $(48\pm 5)$%. This device enables a raw experimental efficiency of $(12\pm 2)$\% with fluorescence detection rates as high as $(4.6 - 5.7)\times 10^6$ counts per second from a single NV center.
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Submitted 5 November, 2017;
originally announced November 2017.
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Extrinsic Photodiodes for Integrated Mid-Infrared Silicon Photonics
Authors:
Richard R. Grote,
Brian Souhan,
Noam Ophir,
Jeffrey B. Driscoll,
Keren Bergman,
Hassaram Bakhru,
William M. J. Green,
Richard M. Osgood Jr
Abstract:
Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long been used for mid-infrared detection with Si and Ge acting as host materials. Leveraging the dopant-induced sub-bandgap trap-states used in bulk photoconductors…
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Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long been used for mid-infrared detection with Si and Ge acting as host materials. Leveraging the dopant-induced sub-bandgap trap-states used in bulk photoconductors for waveguide integrated mid-infrared detectors offers simple processing, integration, and operation throughout the mid-infrared by appropriate choice of dopant. In particular, Si doped with Zn forms two trap levels ~ 0.3 eV and ~ 0.58 eV above the valence band, and has been utilized extensively for cryogenically cooled bulk extrinsic photoconductors. In this letter, we present room temperature operation of Zn+ implanted Si waveguide photodiodes from 2200 nm to 2400 nm, with measured responsivities of up to 87 mA/W and low dark currents of < 10 microamps.
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Submitted 24 June, 2014;
originally announced June 2014.
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Low-voltage nanodomain writing in He-implanted lithium niobate crystals
Authors:
M. Lilienblum,
A. Ofan,
Á. Hoffmann,
O. Gaathon,
L. Vanamurthy,
S. Bakhru,
H. Bakhru,
R. M. Osgood, Jr.,
E. Soergel
Abstract:
A scanning force microscope tip is used to write ferroelectric domains in He-implanted single-crystal lithium niobate and subsequently probe them by piezoresponse force microscopy. Investigation of cross-sections of the samples showed that the buried implanted layer, $\sim 1$\,\textmu m below the surface, is non-ferroelectric and can thus act as a barrier to domain growth. This barrier enabled sta…
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A scanning force microscope tip is used to write ferroelectric domains in He-implanted single-crystal lithium niobate and subsequently probe them by piezoresponse force microscopy. Investigation of cross-sections of the samples showed that the buried implanted layer, $\sim 1$\,\textmu m below the surface, is non-ferroelectric and can thus act as a barrier to domain growth. This barrier enabled stable surface domains of $< 1$\,\textmu m size to be written in 500\,\textmu m-thick crystal substrates with voltage pulses of only 10\,V applied to the tip.
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Submitted 9 September, 2010;
originally announced September 2010.
