Versatile Direct Writing of Dopants in a Solid State Host Through Recoil Implantation
Authors:
Johannes E. Fröch,
Alan Bahm,
Mehran Kianinia,
Mu Zhao,
Vijay Bhatia,
Sejeong Kim,
Julie M. Cairney,
Weibo Gao,
Carlo Bradac,
Igor Aharonovich,
Milos Toth
Abstract:
Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the realisation of quantum technologies. Yet, the introduction of atomic defects through direct ion implantation remains a fundamental challenge. Herein, we establis…
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Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the realisation of quantum technologies. Yet, the introduction of atomic defects through direct ion implantation remains a fundamental challenge. Herein, we establish a universal method for material do** by exploiting one of the most fundamental principles of physics - momentum transfer. As a proof of concept, we direct-write arrays of emitters into diamond via momentum transfer from a Xe+ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We conclusively show that the technique, which we term knock-on do**, can yield ultra-shallow dopant profiles localized to the top 5 nm of the target surface, and use it to achieve sub-50 nm lateral resolution. The knock-on do** method is cost-effective, yet very versatile, powerful and universally suitable for applications such as electronic and magnetic do** of atomically thin materials and engineering of near-surface states of semiconductor devices.
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Submitted 8 October, 2020; v1 submitted 20 January, 2020;
originally announced January 2020.
Emergent formation of dynamic topographic patterns in electron beam induced etching
Authors:
Aiden A. Martin,
Alan Bahm,
James Bishop,
Igor Aharonovich,
Milos Toth
Abstract:
Spontaneous formation of geometric patterns is a fascinating, ubiquitous process that provides fundamental insights into the roles of symmetry breaking, anisotropy and nonlinear interactions in emergent phenomena. Here we report dynamic, highly ordered topographic patterns on the surface of diamond that span multiple length scales and have a symmetry controlled by the chemical species of a precurs…
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Spontaneous formation of geometric patterns is a fascinating, ubiquitous process that provides fundamental insights into the roles of symmetry breaking, anisotropy and nonlinear interactions in emergent phenomena. Here we report dynamic, highly ordered topographic patterns on the surface of diamond that span multiple length scales and have a symmetry controlled by the chemical species of a precursor gas used in electron beam induced etching (EBIE). This behavior reveals an underlying etch rate anisotropy and an electron energy transfer pathway that has been overlooked by existing EBIE theory. We present an etch rate kinetics model that fully explains our results and is universally applicable to EBIE. Our findings can be exploited for controlled wetting, optical structuring and other emerging applications that require nano and micro-scale surface texturing.
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Submitted 19 September, 2015;
originally announced September 2015.
