Showing 1–6 of 6 results for author: Bagwell, P F

Mode Competition in Gas and Semiconductor Lasers

Authors: Philip F. Bagwell

Abstract: The output spectrum of both gas and semiconductor lasers usually contains more than one frequency. Multimode operation in gas versus semiconductor lasers arises from different physics. In gas lasers, slow equilibration of the electron populations at different energies makes each frequency an independent single-mode laser. The slow electron diffusion in semiconductor lasers, combined with the spa… ▽ More The output spectrum of both gas and semiconductor lasers usually contains more than one frequency. Multimode operation in gas versus semiconductor lasers arises from different physics. In gas lasers, slow equilibration of the electron populations at different energies makes each frequency an independent single-mode laser. The slow electron diffusion in semiconductor lasers, combined with the spatially varying optical intensity patterns of the modes, makes each region of space an independent single-mode laser. We develop a rate equation model for the photon number in each mode which captures all these effects. Plotting the photon number versus pum** rate for the competing modes, in both subthreshold and above threshold operation, illustrates the changes in the laser output spectrum due to either slow equilibration or slow diffusion of electrons. △ Less

Submitted 9 September, 2003; originally announced September 2003.

Is the `Finite Bias Anomaly' in planar GaAs-Superconductor junctons caused by point-contact like structures?

Authors: S. Chaudhuri, P. F. Bagwell, D. McInturff, J. C. P. Chang, S. Paak, M. R. Melloch, J. M. Woodall, T. M. Pekarek, B. C. Crooker

Abstract: We correlate transmission electron microscope (TEM) pictures of superconducting In contacts to an AlGaAs/GaAs heterojunction with differential conductance spectroscopy performed on the same heterojunction. Metals deposited onto a (100) AlGaAs/GaAs heterostructure do not form planar contacts but, during thermal annealing, grow down into the heterostructure along crystallographic planes in pyramid… ▽ More We correlate transmission electron microscope (TEM) pictures of superconducting In contacts to an AlGaAs/GaAs heterojunction with differential conductance spectroscopy performed on the same heterojunction. Metals deposited onto a (100) AlGaAs/GaAs heterostructure do not form planar contacts but, during thermal annealing, grow down into the heterostructure along crystallographic planes in pyramid-like `point contacts'. Random surface nucleation and growth gives rise to a different interface transmission for each superconducting point contact. Samples annealed for different times, and therefore having different contact geometry, show variations in $dI/dV$ characteristic of ballistic transport of Cooper pairs, wave interference between different point emitters, and different types of weak localization corrections to Giaever tunneling. We give a possible mechanism whereby the `finite bias anomaly' of Poirier et al. (Phys. Rev. Lett., {\bf 79}, 2105 (1997)), also observed in these samples, can arise by adding the conductance of independent superconducting point emitters in parallel. △ Less

Submitted 16 April, 1999; originally announced April 1999.

Ballistic Transport and Andreev Resonances in Nb-In Superconducting Contacts to InAs and LTG-GaAs

Authors: T. Rizk, A. Yulius, W. I. Yoo, P. F. Bagwell, D. McInturff, P. Chin, J. M. Woodall, T. M. Pekarek, T. N. Jackson

Abstract: We have formed superconducting contacts in which Cooper pairs incident from a thick In layer must move through a thin Nb layer to reach a semiconductor, either InAs or low temperature grown (LTG) GaAs. The effect of pair tunneling through the Nb layer can be seen by varying the temperature through the critical temperature of In. Several of the In/Nb-InAs devices display a peak in the differentia… ▽ More We have formed superconducting contacts in which Cooper pairs incident from a thick In layer must move through a thin Nb layer to reach a semiconductor, either InAs or low temperature grown (LTG) GaAs. The effect of pair tunneling through the Nb layer can be seen by varying the temperature through the critical temperature of In. Several of the In/Nb-InAs devices display a peak in the differential conductance near zero-bias voltage, which is strong evidence of ballistic transport across the NS interface. The differential conductance of the In/Nb-(LTG) GaAs materials system displays conductance resonances of McMillan-Rowell type. These resonant levels exist within a band of conducting states inside the energy gap, formed from excess As incorporation into the (LTG) GaAs during growth. Electrons propagating in this band of states multiply reflect between the superconductor and a potential barrier in the GaAs conduction band to form the conductance resonances. A scattering state theory of the differential conductance, including Andreev reflections from the composite In/Nb contact, accounts for most qualitative features in the data. △ Less

Submitted 15 April, 1999; originally announced April 1999.

Excess Currents Larger than the Point Contact Limit in Normal Metal -Superconducting Junctions

Authors: Richard Riedel, Philip F. Bagwell

Abstract: In a point contact NS junction, perfect Andreev reflection occurs over a range of voltages equal to the superconducting energy gap, producing an excess current of $I_{exc} = (4/3)(2eΔ/h)$. If the superconductor has a finite width, rather than the infinite width of the point contact, one cannot neglect superfluid flow inside the superconducting contact. The energy range available for perfect Andr… ▽ More In a point contact NS junction, perfect Andreev reflection occurs over a range of voltages equal to the superconducting energy gap, producing an excess current of $I_{exc} = (4/3)(2eΔ/h)$. If the superconductor has a finite width, rather than the infinite width of the point contact, one cannot neglect superfluid flow inside the superconducting contact. The energy range available for perfect Andreev reflections then becomes larger than the superconducting gap, since superfluid flow alters the dispersion relation inside the finite width superconductor. We find a maximum excess current of approximately $(7/3)(2eΔ/h)$ when the width of the superconductor is approximately 7/3 times the width of the normal metal. △ Less

Submitted 15 April, 1999; originally announced April 1999.

Supercurrent switching in Three- and Four- Terminal Josephson Junctions

Authors: H. Tolga Ilhan, Philip F. Bagwell

Abstract: Control of the Josephson current by varying a gate current has recently been demonstrated in both 4-terminal and 3-terminal junctions. We show that, when the the gates are weakly coupled to the Josephson junction, the Josephson current versus gate current (or versus gate voltage) relation is the same for both the 4- and 3- terminal geometries. At low temperature, the supercurrent switches abrupt… ▽ More Control of the Josephson current by varying a gate current has recently been demonstrated in both 4-terminal and 3-terminal junctions. We show that, when the the gates are weakly coupled to the Josephson junction, the Josephson current versus gate current (or versus gate voltage) relation is the same for both the 4- and 3- terminal geometries. At low temperature, the supercurrent switches abruptly as a function of the gate voltage, but only slowly as a function of the gate current. △ Less

Submitted 22 June, 1998; originally announced June 1998.

Comments: 5 pages, 5 figures

Andreev Level Spectroscopy and Josephson Current Switching in a 3-Terminal Josephson Junction

Authors: H. Tolga Ilhan, H. Volkan Demir, Philip F. Bagwell

Abstract: We calculate the electrical currents through a superconductor - insulator - superconductor junction which is also weakly coupled to a normal metal side probe. The voltage $V$ applied to the normal metal terminal controls the occupation of Andreev energy levels $E_n$, and therefore controls the Josephson current flowing through these levels. Whenever the probe voltage crosses an Andreev level, th… ▽ More We calculate the electrical currents through a superconductor - insulator - superconductor junction which is also weakly coupled to a normal metal side probe. The voltage $V$ applied to the normal metal terminal controls the occupation of Andreev energy levels $E_n$, and therefore controls the Josephson current flowing through these levels. Whenever the probe voltage crosses an Andreev level, the Josephson current changes abruptly by an amount equal to the current flowing through the Andreev level. The differential conductance along the normal metal terminal permits spectroscopy of the Andreev levels. In a short junction $(L \ll ξ_0)$, the critical current switches abruptly from the Ambegaokar-Baratoff value to zero when the probe voltage is approximately equal to the superconducting energy gap ($|eV| \simeq Δ$). The magnitude of the Josephson current switching in a long junction $(L \gg ξ_0)$, and the range of probe voltages over which the Josephson current differs from its equilibrium value, are much smaller than for three-terminal ballistic superconductor - normal metal - superconductor junctions. △ Less

Submitted 26 June, 1998; v1 submitted 23 December, 1997; originally announced December 1997.

Comments: 17 pages, 19 figures (RevTeX)