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Ice-bridging frustration by self-ejection of single droplets results in superior anti-frosting surfaces
Authors:
Nicolò G. Di Novo,
Alvise Bagolini,
Nicola M. Pugno
Abstract:
Surfaces capable of delaying the frosting passively and facilitating its removal are highly desirable in fields where ice introduces inefficiencies and risks. Coalescence jum**, enabled by highly hydrophobic surfaces, is already exploited to slow down the frosting but it is insufficient to completely eliminate the propagation by ice-bridging. We show how the self-ejection of single condensation…
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Surfaces capable of delaying the frosting passively and facilitating its removal are highly desirable in fields where ice introduces inefficiencies and risks. Coalescence jum**, enabled by highly hydrophobic surfaces, is already exploited to slow down the frosting but it is insufficient to completely eliminate the propagation by ice-bridging. We show how the self-ejection of single condensation droplets can frustrate the ice bridges of all the condensation droplets leading to a frost velocity lower than 0.5 um/s thus drop** below the current limits of passive surfaces by a factor of at least 2. Arrays of truncated microcones, covered by uniformly hydrophobic nanostructures, enable individual condensation droplets to growth and self-propel towards the top of the microstructures and to self-eject once a precise volume is reached. The independency of self-ejection on the neighbour droplets allows a precise control on the droplets' size and distance distributions and the ice-bridging frustration. The most performant microstructures tend to cones with a sharp tip on which the percentage of self-ejection is maximum. Looking towards applications, tapered microstructures allow maximising the percentage of self-ejecting drops while maintaining a certain mechanical strength. Further, it is shown that inserted pinning sites are not essential, which greatly facilitates manufacturing.
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Submitted 24 July, 2023;
originally announced July 2023.
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Single condensation droplet self-ejection from divergent structures with uniform wettability
Authors:
Nicolo' G. Di Novo,
Alvise Bagolini,
Nicola M. Pugno
Abstract:
Coalescence-jum** of condensation droplets is widely studied for anti-icing, condensation heat transfer, water harvesting and self-cleaning. Another phenomenon that is arousing interest for potential enhancements is the individual droplet self-ejection. However, whether it is possible from divergent structures without detachment from pinning sites remains unexplored. Here we investigate the self…
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Coalescence-jum** of condensation droplets is widely studied for anti-icing, condensation heat transfer, water harvesting and self-cleaning. Another phenomenon that is arousing interest for potential enhancements is the individual droplet self-ejection. However, whether it is possible from divergent structures without detachment from pinning sites remains unexplored. Here we investigate the self-ejection of individual droplets from divergent, uniformly hydrophobic structures. We designed, fabricated and tested arrays of nanostructured truncated microcones arranged in a square pattern. The dynamics of the single condensation droplet is revealed with high speed microscopy: it self-ejects after cycles of growth and self-propulsion between four cones. Adopting the conical pore for simplicity, we modelled the slow iso-pressure growth phases and the surface energy release-driven rapid transients enabled once a dynamic configuration is reached. In addition to easier fabrication, microcones with uniform wettability have the potential to allow self-ejection of almost all the droplets with a precise size while maintaining mechanical resistance and thus promising great improvements in a plethora of applications.
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Submitted 30 June, 2023;
originally announced June 2023.
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MEMS Mirror Manufacturing and Testing for Innovative Space Applications
Authors:
A. Bagolini,
M. Boscardin,
S. Dell'Agnello,
G. Delle Monache,
M. Di Paolo Emilio,
L. Porcelli,
L. Salvatori,
M. Tibuzzi
Abstract:
In the framework of the GLARE-X (Geodesy via LAser Ranging from spacE X) project, led by INFN and funded for the years 2019-2021, aiming at significantly advance space geodesy, one shows the initial activities carried out in 2019 in order to manufacture and test adaptive mirrors. This specific article deals with manufacturing and surface quality measurements of the passive substrate of 'candidate'…
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In the framework of the GLARE-X (Geodesy via LAser Ranging from spacE X) project, led by INFN and funded for the years 2019-2021, aiming at significantly advance space geodesy, one shows the initial activities carried out in 2019 in order to manufacture and test adaptive mirrors. This specific article deals with manufacturing and surface quality measurements of the passive substrate of 'candidate' MEMS (Micro-Electro-Mechanical Systems) mirrors for MRRs (Modulated RetroReflectors); further publications will show the active components. The project GLARE-X was approved by INFN for the years 2019-2021: it involves several institutions, including, amongst the other, INFN-LNF and FBK. GLARE-X is an innovative R&D activity, whose at large space geodesy goals will concern the following topics: inverse laser ranging (from a laser terminal in space down to a target on a planet), laser ranging for debris removal and iterative orbit correction, development of high-end ToF (Time of Flight) electronics, manufacturing and testing of MRRs for space, and provision of microreflectors for future NEO (Near Earth Orbit) cubesats. This specific article summarizes the manufacturing and surface quality measurements activities performed on the passive substrate of 'candidate' MEMS mirrors, which will be in turn arranged into MRRs. The final active components, to be realized by 2021, will inherit the manufacturing characteristics chosen thanks to the presented (and further) testing campaigns, and will find suitable space application to NEO, Moon, and Mars devices, like, for example, cooperative and active lidar scatterers for laser altimetry and lasercomm support.
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Submitted 15 June, 2020;
originally announced June 2020.
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Thin and edgeless sensors for ATLAS pixel detector upgrade
Authors:
Audrey Ducourthial,
Marco Bomben,
Giovanni Calderini,
Louis D'Eramo,
Giovanni Marchiori,
Ilaria Luise,
Alvise Bagolini,
Maurizio Boscardin,
Luciano Bosisio,
Giovanni Darbo,
Gian-Franco Dalla Betta,
Gabriele Giacomini,
Marco Meschini,
Alberto Messineo,
Sabina Ronchin,
Nicola Zorzi
Abstract:
To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is mi…
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To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is minimized thanks to the active edge technology. In this paper we report on two productions, a first one consisting of 200 μm thick n-on-p sensors with active edge, a second one composed of 100 and 130 μm thick n-on-p sensors. Those sensors have been tested on beam, both at CERN-SPS and at DESY and their performance before and after irradiation will be presented.
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Submitted 10 October, 2017;
originally announced October 2017.
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Performance of active edge pixel sensors
Authors:
Marco Bomben,
Audrey Ducourthial,
Alvise Bagolini,
Maurizio Boscardin,
Luciano Bosisio,
Giovanni Calderini,
Louis D'Eramo,
Gabriele Giacomini,
Giovanni Marchiori,
Nicola Zorzi,
André Rummler,
Jens Weingarten
Abstract:
To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin…
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To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin planar n-on-p pixel sensors with active edge have been designed and produced by LPNHE and FBK foundry. Two detector module prototypes, consisting of pixel sensors connected to FE-I4B readout chips, have been tested with beams at CERN and DESY. In this paper the performance of these modules are reported. In particular the lateral extension of the detection volume, beyond the pixel region, is investigated and the results show high hit-efficiency also at the detector edge, even in presence of guard rings.
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Submitted 4 April, 2017; v1 submitted 6 February, 2017;
originally announced February 2017.
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Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
Authors:
Marco Bomben,
Alvise Bagolini,
Maurizio Boscardin,
Luciano Bosisio,
Giovanni Calderini,
Jacques Chauveau,
Audrey Ducourthial,
Gabriele Giacomini,
Giovanni Marchiori,
Nicola Zorzi
Abstract:
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel senso…
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In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.
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Submitted 7 September, 2016;
originally announced September 2016.
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Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades
Authors:
Gabriele Giacomini,
Alvise Bagolini,
Marco Bomben,
Maurizio Boscardin,
Luciano Bosisio,
Giovanni Calderini,
Jacques Chauveau,
Alessandro La Rosa,
Giovanni Marchiori,
Nicola Zorzi
Abstract:
In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATL…
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In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these demands. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch.
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Submitted 2 December, 2013;
originally announced December 2013.
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Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades
Authors:
M. Bomben,
A. Bagolini,
M. Boscardin,
L. Bosisio,
G. Calderini,
J. Chauveau,
G. Giacomini,
A. La Rosa,
G. Marchori,
N. Zorzi
Abstract:
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar…
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In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.
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Submitted 15 November, 2013;
originally announced November 2013.
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Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades
Authors:
M. Bomben,
A. Bagolini,
M. Boscardin,
L. Bosisio,
G. Calderini,
J. Chauveau,
G. Giacomini,
A. La Rosa,
G. Marchori,
N. Zorzi
Abstract:
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar…
▽ More
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given.
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Submitted 7 November, 2013;
originally announced November 2013.
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Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
Authors:
G. Calderini,
A. Bagolini,
M. Bomben,
M. Boscardin,
L. Bosisio,
J. Chauveau,
G. Giacomini,
A. La Rosa,
G. Marchiori,
N. Zorzi
Abstract:
In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to…
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In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FTK.
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Submitted 21 October, 2013;
originally announced October 2013.
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Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade
Authors:
M. Bomben,
A. Bagolini,
M. Boscardin,
L. Bosisio,
G. Calderini,
J. Chauveau,
G. Giacomini,
A. La Rosa,
G. Marchori,
N. Zorzi
Abstract:
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar p…
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In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the "active edge" concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.
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Submitted 15 February, 2013; v1 submitted 14 December, 2012;
originally announced December 2012.
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Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades
Authors:
M. Bomben,
A. Bagolini,
M. Boscardin,
L. Bosisio,
G. Calderini,
J. Chauveau,
G. Giacomini,
A. La Rosa,
G. Marchori,
N. Zorzi
Abstract:
The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably d…
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The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of $1 \times 10^{15} {\rm n_{eq}}/{\rm cm}^2$ comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb$^{-1}$) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.
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Submitted 18 February, 2013; v1 submitted 22 November, 2012;
originally announced November 2012.
