Large-scale quantum reservoir learning with an analog quantum computer
Authors:
Milan Kornjača,
Hong-Ye Hu,
Chen Zhao,
Jonathan Wurtz,
Phillip Weinberg,
Majd Hamdan,
Andrii Zhdanov,
Sergio H. Cantu,
Hengyun Zhou,
Rodrigo Araiza Bravo,
Kevin Bagnall,
James I. Basham,
Joseph Campo,
Adam Choukri,
Robert DeAngelo,
Paige Frederick,
David Haines,
Julian Hammett,
Ning Hsu,
Ming-Guang Hu,
Florian Huber,
Paul Niklas Jepsen,
Ningyuan Jia,
Thomas Karolyshyn,
Minho Kwon
, et al. (28 additional authors not shown)
Abstract:
Quantum machine learning has gained considerable attention as quantum technology advances, presenting a promising approach for efficiently learning complex data patterns. Despite this promise, most contemporary quantum methods require significant resources for variational parameter optimization and face issues with vanishing gradients, leading to experiments that are either limited in scale or lac…
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Quantum machine learning has gained considerable attention as quantum technology advances, presenting a promising approach for efficiently learning complex data patterns. Despite this promise, most contemporary quantum methods require significant resources for variational parameter optimization and face issues with vanishing gradients, leading to experiments that are either limited in scale or lack potential for quantum advantage. To address this, we develop a general-purpose, gradient-free, and scalable quantum reservoir learning algorithm that harnesses the quantum dynamics of neutral-atom analog quantum computers to process data. We experimentally implement the algorithm, achieving competitive performance across various categories of machine learning tasks, including binary and multi-class classification, as well as timeseries prediction. Effective and improving learning is observed with increasing system sizes of up to 108 qubits, demonstrating the largest quantum machine learning experiment to date. We further observe comparative quantum kernel advantage in learning tasks by constructing synthetic datasets based on the geometric differences between generated quantum and classical data kernels. Our findings demonstrate the potential of utilizing classically intractable quantum correlations for effective machine learning. We expect these results to stimulate further extensions to different quantum hardware and machine learning paradigms, including early fault-tolerant hardware and generative machine learning tasks.
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Submitted 2 July, 2024;
originally announced July 2024.
Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors
Authors:
Christopher Foy,
Lenan Zhang,
Matthew E. Trusheim,
Kevin R. Bagnall,
Michael Walsh,
Evelyn N. Wang,
Dirk R. Englund
Abstract:
The simultaneous imaging of magnetic fields and temperature (MT) is important in a range of applications, including studies of carrier transport, solid-state material dynamics, and semiconductor device characterization. Techniques exist for separately measuring temperature (e.g., infrared (IR) microscopy, micro-Raman spectroscopy, and thermo-reflectance microscopy) and magnetic fields (e.g., scann…
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The simultaneous imaging of magnetic fields and temperature (MT) is important in a range of applications, including studies of carrier transport, solid-state material dynamics, and semiconductor device characterization. Techniques exist for separately measuring temperature (e.g., infrared (IR) microscopy, micro-Raman spectroscopy, and thermo-reflectance microscopy) and magnetic fields (e.g., scanning probe magnetic force microscopy and superconducting quantum interference devices). However, these techniques cannot measure magnetic fields and temperature simultaneously. Here, we use the exceptional temperature and magnetic field sensitivity of nitrogen vacancy (NV) spins in conformally-coated nanodiamonds to realize simultaneous wide-field MT imaging. Our "quantum conformally-attached thermo-magnetic" (Q-CAT) imaging enables (i) wide-field, high-frame-rate imaging (100 - 1000 Hz); (ii) high sensitivity; and (iii) compatibility with standard microscopes. We apply this technique to study the industrially important problem of characterizing multifinger gallium nitride high-electron-mobility transistors (GaN HEMTs). We spatially and temporally resolve the electric current distribution and resulting temperature rise, elucidating functional device behavior at the microscopic level. The general applicability of Q-CAT imaging serves as an important tool for understanding complex MT phenomena in material science, device physics, and related fields.
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Submitted 13 March, 2019;
originally announced March 2019.