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Evidence of the disorder-independent electron-phonon scattering time in thin NbN films
Authors:
A. I. Lomakin,
E. M. Baeva,
A. D. Triznova,
N. A. Titova,
P. I. Zolotov,
A. V. Semenov,
D. E. Sunegin,
A. V. Lubenchenko,
A. I. Kolbatova,
G. N. Goltsman
Abstract:
We report on experimental study of the effect of disorder on electronic parameters and inelastic scattering mechanisms in ultrathin superconducting NbN films, which are commonly used in single-photon detectors. An increase in disorder in the studied 2.5 nm thick NbN films characterized by Ioffe-Regel parameter from 6.3 to 1.6 is accompanied by a decrease in the critical temperature $T_c$ from 11.5…
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We report on experimental study of the effect of disorder on electronic parameters and inelastic scattering mechanisms in ultrathin superconducting NbN films, which are commonly used in single-photon detectors. An increase in disorder in the studied 2.5 nm thick NbN films characterized by Ioffe-Regel parameter from 6.3 to 1.6 is accompanied by a decrease in the critical temperature $T_c$ from 11.5 K to 3.4 K. By measuring magnetoconductance in the range from $T_c$ to $\sim3T_c$, we extract the inelastic scattering rates of electrons, including electron-phonon (e-ph) scattering rates $τ_{e-ph}^{-1}$. We observe that $τ_{e-ph}^{-1}$ and their temperature dependencies are insensitive to disorder that is not described by the existing models of the e-ph scattering in disordered metals and can be due to the presence of weakly disordered metal grains. As the temperature decreases the temperature dependence $τ_{e-ph}^{-1}$ changes from $T^3$ to $T^2$, which can be result of a decrease in the dimension of the phonons involved in the e-ph scattering. The obtained values of material parameters of ultrathin NbN films can be useful for optimization of performance of NbN-based electronic devices.
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Submitted 9 December, 2022; v1 submitted 11 July, 2022;
originally announced July 2022.
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Intrinsic mechanisms of the superconducting transition broadening in epitaxial TiN films
Authors:
E. M. Baeva,
A. I. Kolbatova,
N. A. Titova,
S. Saha,
A. Boltasseva,
S. Bogdanov,
V. Shalaev,
A. V. Semenov,
G. N. Goltsman,
V. S. Khrapai
Abstract:
We investigate the impact of various fluctuation mechanisms on the dc resistance at the superconducting resistive transition (RT) in epitaxial titanium nitride (TiN) films. The studied samples demonstrate a relatively steep RT with $δT/T_\mathrm{c}$ $\sim 0.002 - 0.025$ depending on the film thickness (20, 9, and 5\, nm) and device dimensions. The transition is significantly broader than predicted…
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We investigate the impact of various fluctuation mechanisms on the dc resistance at the superconducting resistive transition (RT) in epitaxial titanium nitride (TiN) films. The studied samples demonstrate a relatively steep RT with $δT/T_\mathrm{c}$ $\sim 0.002 - 0.025$ depending on the film thickness (20, 9, and 5\, nm) and device dimensions. The transition is significantly broader than predicted by a conventional theory of superconducting fluctuations ($δT/T_\mathrm{c} \ll 10^{-3}$), which can be can be tackled by the effective medium theory of RT in an inhomogeneous superconductor. We propose that the underlying inhomogeneity has intrinsic origin and manifests via two microscopic mechanisms - static and dynamic. The dynamic inhomogeneity is associated with spontaneous fluctuations of the electronic temperature ($T$-fluctuations), whereas the static one is related to random spatial distribution of surface magnetic disorder (MD) present in TiN films. Our analysis reveals distinct dependencies of the RT width on the material parameters and device dimensions for the two mechanisms, which allows to disentangle their contributions in experiment. We find that while the $T$-fluctuations may contribute a sizeable part of the measured RT width, the main effect is related to the MD mechanism, which is quantitatively consistent with the data in a wide range of sample dimensions. Given the fact that both microscopic mechanisms are almost inevitably present in real devices, our results provide a novel perspective of microscopic origin of the RT broadening and inhomogeneity in thin superconducting films.
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Submitted 16 January, 2024; v1 submitted 13 February, 2022;
originally announced February 2022.
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Slow electron-phonon relaxation controls the dynamics of the superconducting resistive transition
Authors:
E. M. Baeva,
A. I. Kolbatova,
N. A. Titova,
S. Saha,
A. Boltasseva,
S. Bogdanov,
V. Shalaev,
A. V. Semenov,
A. Levchenko,
G. N. Goltsman,
V. S. Khrapai
Abstract:
We investigate the temporal and spatial scales of resistance fluctuations (R-fluctuations) at the superconducting resistive transition accessed through voltage fluctuations measurements in thin epitaxial TiN films. This material is characterized by a record slow electron-phonon relaxation, which puts it far beyond the applicability range of the textbook scenario of superconducting fluctuations. Th…
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We investigate the temporal and spatial scales of resistance fluctuations (R-fluctuations) at the superconducting resistive transition accessed through voltage fluctuations measurements in thin epitaxial TiN films. This material is characterized by a record slow electron-phonon relaxation, which puts it far beyond the applicability range of the textbook scenario of superconducting fluctuations. The measured Lorentzian spectrum of the R-fluctuations identifies their correlation time, which is nearly constant across the transition region and has no relation to the conventional Ginzburg-Landau time scale. Instead, the correlation time coincides with the energy relaxation time determined by a combination of the electron-phonon relaxation and the diffusion in reservoirs. Our data is quantitatively consistent with the model of spontaneous temperature fluctuations and highlight important caveats in the accepted physical picture of the resistive transition in materials with slow electron-phonon relaxation.
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Submitted 16 January, 2024; v1 submitted 13 February, 2022;
originally announced February 2022.
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Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates
Authors:
E. M. Baeva,
N. A. Titova,
L. Veyrat,
B. Sacépé,
A. V. Semenov,
G. N. Goltsman,
A. I. Kardakova,
V. S. Khrapai
Abstract:
Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InO$_x$, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature $T_e$ of the films as a function of Joule power…
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Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InO$_x$, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature $T_e$ of the films as a function of Joule power per unit of area $P_{2D}$. In all samples, we observe the dependence $P_{2D}\propto T_e^n$ with the exponent $n\simeq 2$, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of $P_{2D}(T_e)$ on the length of the amorphous insulating layer is consistent with the linear $T$-dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for the phonon mean free path smaller than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
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Submitted 18 May, 2021; v1 submitted 18 January, 2021;
originally announced January 2021.
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Universal bottleneck for thermal relaxation in disordered metallic films
Authors:
E. M. Baeva,
N. A. Titova,
A. I. Kardakova,
S. U. Piatrusha,
V. S. Khrapai
Abstract:
We study the heat relaxation in current biased metallic films in the regime of strong electron-phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering the heat conduction occurs predominantly via the electronic system and the profile is p…
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We study the heat relaxation in current biased metallic films in the regime of strong electron-phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of voltage bias, in spite of the fact that all the dimensions of the film are large compared to the electron-phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron-phonon scattering rate. A preliminary experimental study of a 200 nm thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.
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Submitted 6 December, 2019;
originally announced December 2019.
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Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder
Authors:
N. A. Saveskul,
N. A. Titova,
E. M. Baeva,
A. V. Semenov,
A. V. Lubenchenko,
S. Saha,
H. Reddy,
S. I Bogdanov,
E. E. Marinero,
V. M. Shalaev,
A. Boltasseva,
V. S. Khrapai,
A. I. Kardakova,
G. N. Goltsman
Abstract:
We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for $d\leq20\,$nm. At the same time, a substantial thickness-d…
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We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for $d\leq20\,$nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of $\sim10^{12}\,\mathrm{cm}^{-2}$. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
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Submitted 5 November, 2019; v1 submitted 12 March, 2019;
originally announced March 2019.
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Thermal properties of NbN single-photon detectors
Authors:
E. M. Baeva,
M. V. Sidorova,
A. A. Korneev,
K. V. Smirnov,
A. V. Divochy,
P. V. Morozov,
P. I. Zolotov,
Yu. B. Vakhtomin,
A. V. Semenov,
T. M. Klapwijk,
V. S. Khrapai,
G. N. Goltsman
Abstract:
We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses we determine the absolute optical power absorbed by the NbN film and, via a resistive superconductor thermometry, the thermal resistance Z(T) of the NbN film in dependence of temperature. In principle, this approach permits a simul…
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We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses we determine the absolute optical power absorbed by the NbN film and, via a resistive superconductor thermometry, the thermal resistance Z(T) of the NbN film in dependence of temperature. In principle, this approach permits a simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous for their similar temperature dependencies. We analyze the Z(T) within the two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.
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Submitted 1 January, 2019; v1 submitted 7 October, 2018;
originally announced October 2018.
