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Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current
Authors:
Jai Kwan Bae,
Matthew Andorf,
Adam Bartnik,
Alice Galdi,
Luca Cultrera,
Jared Maxson,
Ivan Bazarov
Abstract:
Negative Electron Affinity (NEA) activated GaAs photocathodes are the most popular option for generating a high current (> 1 mA) spin-polarized electron beam. Despite its popularity, a short operational lifetime is the main drawback of this material. Recent works have shown that the lifetime can be improved by using a robust Cs-Sb-O NEA layer with minimal adverse effects. In this work, we operate…
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Negative Electron Affinity (NEA) activated GaAs photocathodes are the most popular option for generating a high current (> 1 mA) spin-polarized electron beam. Despite its popularity, a short operational lifetime is the main drawback of this material. Recent works have shown that the lifetime can be improved by using a robust Cs-Sb-O NEA layer with minimal adverse effects. In this work, we operate GaAs photocathodes with this new activation method in a high voltage environment to extract a high current. We observed spectral dependence on the lifetime improvement. In particular, we saw a 45% increase in the lifetime at 780 nm for Cs-Sb-O activated GaAs compared to Cs-O activated GaAs.
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Submitted 26 May, 2022;
originally announced May 2022.
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Photoemission characterization of N-polar III-Nitride photocathodes as bright electron beam source for accelerator applications
Authors:
L. Cultrera,
E. Rocco,
F. Shahedipour-Sandvik,
L. D. Bell,
J. K. Bae,
I. V. Bazarov,
P. Saha,
S. Karkare,
A. Arjunan
Abstract:
We report on the growth and characterization of a new class of photocathode structures for application as electron sources to produce high brightness electron beams for accelerator applications. The sources are realized using III-Nitride materials and are designed to leverage the strong polarization field characteristic of this class material while grown in their wurtzite crystal structure to prod…
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We report on the growth and characterization of a new class of photocathode structures for application as electron sources to produce high brightness electron beams for accelerator applications. The sources are realized using III-Nitride materials and are designed to leverage the strong polarization field characteristic of this class material while grown in their wurtzite crystal structure to produce a negative electron affinity condition without the use of Cs, possibly allowing these materials to be operated in RF gun. A Quantum Efficiency (QE) of about 1x10$^{-3}$ and a Mean Transverse Energy (MTE) of electron of about 100 meV are measured at the operating wavelength of 265 nm. In a vacuum level of 3x10$^{-10}$ Torr the QE does not decrease after more than 24 hours of continuous operation. The lowest MTE, about 50 meV, is measured at 300 nm where the measured QE is 1.5x10$^{-5}$. Surface characterizations reveal possible contribution to the MTE due to the surface morphology calling for more detailed studies.
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Submitted 4 October, 2021;
originally announced October 2021.
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Monte Carlo Modeling of Spin-polarized Photoemission from p-doped GaAs Activated to Negative Electron Affinity
Authors:
Oksana Chubenko,
Siddharth Karkare,
Dimitre Dimitrov,
Jai Kwan Bae,
Luca Cultrera,
Ivan Bazarov,
Andrei Afanasev
Abstract:
The anticorrelation between quantum efficiency (QE) and electron spin polarization (ESP) from a p-doped GaAs activated to negative electron affinity (NEA) is studied in detail using an ensemble Monte Carlo approach. The photoabsorption, momentum and spin relaxation during transport, and tunnelling of electrons through the surface potential barrier are modeled to identify fundamental mechanisms, wh…
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The anticorrelation between quantum efficiency (QE) and electron spin polarization (ESP) from a p-doped GaAs activated to negative electron affinity (NEA) is studied in detail using an ensemble Monte Carlo approach. The photoabsorption, momentum and spin relaxation during transport, and tunnelling of electrons through the surface potential barrier are modeled to identify fundamental mechanisms, which limit the efficiency of GaAs spin-polarized electron sources. In particular, we study the response of QE and ESP to various parameters such as the photoexcitation energy, do** density, and electron affinity level. Our modeling results for various transport and emission characteristics are in a good agreement with available experimental data. Our findings show that the behaviour of both QE and ESP at room temperature can be fully explained by the bulk relaxation mechanisms and the time which electrons spend in the material before being emitted.
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Submitted 24 June, 2021;
originally announced June 2021.
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Colossal band renormalization and stoner ferromagnetism induced by electron-antiferromagnetic-magnon coupling
Authors:
T. L. Yu,
R. Peng,
2 M. Xu,
W. T. Yang,
Y. H. Song,
C. H. P. Wen,
Q. Yao,
X. Lou,
T. Zhang,
W. Li,
X. Y. Wei,
J. K. Bao,
G. H. Cao,
P. Dudin,
J. D. Denlinger,
V. N. Strocov,
H. C. Xu,
D. L. Feng
Abstract:
The interactions between electrons and antiferromagnetic magnons (AFMMs) are important for a large class of correlated materials. For example, they are the most plausible pairing glues in high-temperature superconductors, such as cuprates and iron pnictides. However, unlike electron-phonon interactions (EPIs), clear-cut observations regarding how electron-AFMM interactions (EAIs) affect the band s…
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The interactions between electrons and antiferromagnetic magnons (AFMMs) are important for a large class of correlated materials. For example, they are the most plausible pairing glues in high-temperature superconductors, such as cuprates and iron pnictides. However, unlike electron-phonon interactions (EPIs), clear-cut observations regarding how electron-AFMM interactions (EAIs) affect the band structure are still lacking. Consequently, critical information on the EAIs, such as its strength and do** dependence, remains elusive. Here we directly observe that EAIs induces a kink structure in the band dispersion in Ba$_{1-x}$K$_x$Mn$_2$As$_2$, and subsequently unveil several key characteristics of EAIs. We found that the coupling constant of EAIs can be as large as 6, and it shows huge do** dependence and temperature dependence, all in stark contrast to the behaviors of EPI and beyond our current understanding of EAIs. Such a colossal renormalization of electronic bands by EAIs drives the system to the Stoner criteria, giving the intriguing ferromagnetic state in Ba$_{1-x}$K$_x$Mn$_2$As$_2$. Our results expand the current knowledge of EAIs, which may facilitate the further understanding of many correlated materials where EAIs play a critical role, such as high-temperature superconductors.
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Submitted 11 November, 2020;
originally announced November 2020.
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Improved lifetime of a high spin polarization superlattice photocathode
Authors:
Jai Kwan Bae,
Alice Galdi,
Luca Cultrera,
Frank Ikponmwen,
Jared Maxson,
Ivan Bazarov
Abstract:
Negative Electron Affinity (NEA) activated surfaces are required to extract highly spin polarized electron beams from GaAs-based photocathodes, but they suffer extreme sensitivity to poor vacuum conditions that results in rapid degradation of quantum efficiency. We report on series of unconventional NEA activations on surfaces of bulk GaAs with Cs, Sb, and O2 using different methods of oxygen expo…
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Negative Electron Affinity (NEA) activated surfaces are required to extract highly spin polarized electron beams from GaAs-based photocathodes, but they suffer extreme sensitivity to poor vacuum conditions that results in rapid degradation of quantum efficiency. We report on series of unconventional NEA activations on surfaces of bulk GaAs with Cs, Sb, and O2 using different methods of oxygen exposure for optimizing photocathode performance. One order of magnitude improvement in lifetime with respect to the standard Cs-O2 activation is achieved without significant loss on electron spin polarization and quantum efficiency by codepositing Cs, Sb, and O2. A strained GaAs/GaAsP superlattice sample activated with the codeposition method demonstrated similar enhancement in lifetime near the photoemission threshold while maintaining 90% spin polarization.
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Submitted 21 November, 2019;
originally announced November 2019.
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Brightness of nonequilibrium photoemission in metallic photocathodes near threshold
Authors:
Jai Kwan Bae,
Ivan Bazarov,
Pietro Musumeci,
Siddharth Karkare,
Howard Padmore,
Jared Maxson
Abstract:
The operation of photoemission electron sources with wavelengths near the photoemission threshold has been shown to dramatically decrease the minimum achievable photocathode emittance, but at the cost of significantly reduced quantum efficiency (QE). In this work, we show that for femtosecond laser and electron pulses, the increase in required laser intensities due to the low QE drives the photoca…
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The operation of photoemission electron sources with wavelengths near the photoemission threshold has been shown to dramatically decrease the minimum achievable photocathode emittance, but at the cost of significantly reduced quantum efficiency (QE). In this work, we show that for femtosecond laser and electron pulses, the increase in required laser intensities due to the low QE drives the photocathode electronic distribution far from static equilibrium. We adapt an existing dynamic model of the electron occupation under high intensity laser illumination to predict the time-dependent effects of the nonequilibrium electron distribution on the QE, mean transverse energy (MTE), and emission brightness of metal phtocathodes. We find that multiphoton photoemission dramatically alters the MTE as compared to thermal equilibrium models, causing the MTE to no longer be a monotonic function of photon excess energy.
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Submitted 21 August, 2018;
originally announced August 2018.
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Effect of impurity scattering on superconductivity in K$_2$Cr$_3$As$_3$
Authors:
Y. Liu,
J. K. Bao,
H. K. Zuo,
A. Ablimit,
Z. T. Tang,
C. M. Feng,
Z. W. Zhu,
G. H. Cao
Abstract:
Impurity scattering in a superconductor may serve as an important probe for the nature of superconducting pairing state. Here we report the impurity effect on superconducting transition temperature $T_\mathrm{c}$ in the newly discovered Cr-based superconductor K$_2$Cr$_3$As$_3$. The resistivity measurements show that the crystals prepared using high-purity Cr metal ($\geq$99.99\%) have an electron…
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Impurity scattering in a superconductor may serve as an important probe for the nature of superconducting pairing state. Here we report the impurity effect on superconducting transition temperature $T_\mathrm{c}$ in the newly discovered Cr-based superconductor K$_2$Cr$_3$As$_3$. The resistivity measurements show that the crystals prepared using high-purity Cr metal ($\geq$99.99\%) have an electron mean free path much larger than the superconducting coherence length. For the crystals prepared using impure Cr that contains various \emph{nonmagnetic} impurities, however, the $T_\mathrm{c}$ decreases significantly, in accordance with the generalized Abrikosov-Gor'kov pair-breaking theory. This finding supports a non-$s$-wave superconductivity in K$_2$Cr$_3$As$_3$.
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Submitted 5 January, 2016;
originally announced January 2016.
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Penetration depth measurements of K2Cr3As3 and Rb2Cr3As3
Authors:
G. M. Pang,
M. Smidman,
W. B. Jiang,
Y. G. Shi,
J. K. Bao,
Z. T. Tang,
Z. F. Weng,
Y. F. Wang,
L. Jiao,
J. L. Zhang,
J. L. Luo,
G. H. Cao,
H. Q. Yuan
Abstract:
The newly discovered superconductors A2Cr3As3 (A = K, Rb, Cs), with a quasi-one-dimensional crystal structure have attracted considerable interest. The crystal structure consists of double-walled tubes of [Cr3As3]^(2-) that extend along the c-axis. Previously we reported measurements of the change in London penetration depth of polycrystalline samples of K2Cr3As3 using a tunnel diode oscillator ba…
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The newly discovered superconductors A2Cr3As3 (A = K, Rb, Cs), with a quasi-one-dimensional crystal structure have attracted considerable interest. The crystal structure consists of double-walled tubes of [Cr3As3]^(2-) that extend along the c-axis. Previously we reported measurements of the change in London penetration depth of polycrystalline samples of K2Cr3As3 using a tunnel diode oscillator based technique, which show a linear temperature dependence at low temperatures, giving evidence for line nodes in the superconducting gap. Here we report similar measurements of the penetration depth for polycrystalline Rb2Cr3As3 and several single crystals of K2Cr3As3, prepared by two different research groups. The single crystal measurements show similar behavior to polycrystalline samples down to 0.9-1.2 K, where a downturn is observed in the frequency shift for all single crystal samples. These results give further evidence for nodal superconductivity in K2Cr3As3, which indicates that the superconducting pairing state is unconventional. The different low temperature behavior observed in samples which have deteriorated after being exposed to air, emphasises that it is necessary to properly handle the samples prior to being measured because the A2Cr3As3 compounds are extremely air sensitive and evidence for nodal superconductivity from penetration depth measurements is only observed in the samples which display a sharp superconducting transition. Therefore further work is required to improve the quality of single crystals and to identify the origin of the downturn.
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Submitted 19 August, 2015;
originally announced August 2015.
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Evidence for nodal superconductivity in quasi-one-dimensional K$_2$Cr$_3$As$_3$
Authors:
G. M. Pang,
M. Smidman,
W. B. Jiang,
J. K. Bao,
Z. F. Weng,
Y. F. Wang,
L. Jiao,
J. L. Zhang,
G. H. Cao,
H. Q. Yuan
Abstract:
The recent discovery of superconductivity in the quasi-one-dimensional compound K$_2$Cr$_3$As$_3$, which consists of double-walled tubes of [(Cr$_3$As$_3$)$^{2-}]^\infty$ that run along the c axis, has attracted immediate attention as a potential system for studying superconductors with reduced dimensionality. Here we report clear experimental evidence for the unconventional nature of the supercon…
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The recent discovery of superconductivity in the quasi-one-dimensional compound K$_2$Cr$_3$As$_3$, which consists of double-walled tubes of [(Cr$_3$As$_3$)$^{2-}]^\infty$ that run along the c axis, has attracted immediate attention as a potential system for studying superconductors with reduced dimensionality. Here we report clear experimental evidence for the unconventional nature of the superconducting order parameter in K$_2$Cr$_3$As$_3$, by precisely measuring the temperature dependence of the change in the penetration depth $Δλ(T)$ using a tunnel diode oscillator. Linear behavior of $Δλ(T)$ is observed for $T\ll T_c$, instead of the exponential behavior of conventional superconductors, indicating that there are line nodes in the superconducting gap. This is strong evidence for unconventional behavior and may provide key information for identifying the pairing state of this novel superconductor.
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Submitted 15 June, 2015; v1 submitted 8 January, 2015;
originally announced January 2015.
