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Ultra-wide-band slow light in photonic crystal coupled-cavity waveguides
Authors:
Yiming Lai,
Mohamed Sabry Mohamed,
Boshen Gao,
Momchil Minkov,
Robert W. Boyd,
Vincenzo Savona,
Romuald Houdre,
Antonio Badolato
Abstract:
Slow light propagation in structured materials is a highly promising approach for realizing on-chip integrated photonic devices based on enhanced optical nonlinearities. One of the most successful research avenues consists in engineering the band dispersion of light-guiding photonic crystal (PC) structures. The primary goal of such devices is to achieve slow-light operation over the largest possib…
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Slow light propagation in structured materials is a highly promising approach for realizing on-chip integrated photonic devices based on enhanced optical nonlinearities. One of the most successful research avenues consists in engineering the band dispersion of light-guiding photonic crystal (PC) structures. The primary goal of such devices is to achieve slow-light operation over the largest possible bandwidth, with large group index, minimal index dispersion, and constant transmission spectrum. Here, we report on the experimental demonstration of to date record high GBP in silicon-based coupled-cavity waveguides (CCWs) operating at telecom wavelengths. Our results rely on novel CCW designs, optimized using a genetic algorithm, and refined nanofabrication processes.
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Submitted 29 June, 2017;
originally announced June 2017.
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Cryogenic photoluminescence imaging system for nanoscale positioning of single quantum emitters
Authors:
** Liu,
Macelo Davanco,
Luca Sapienza,
Kumarasiri Konthasinghe,
Jose Vinicius De Miranda Cardoso,
** Dong Song,
Antonio Badolato,
Kartik Srinivasan
Abstract:
We report a photoluminescence imaging system for locating single quantum emitters with respect to alignment features. Samples are interrogated in a 4~K closed-cycle cryostat by a high numerical aperture (NA=0.9, 100$\times$ magnification) objective that sits within the cryostat, enabling high efficiency collection of emitted photons without image distortions due to the cryostat windows. The locati…
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We report a photoluminescence imaging system for locating single quantum emitters with respect to alignment features. Samples are interrogated in a 4~K closed-cycle cryostat by a high numerical aperture (NA=0.9, 100$\times$ magnification) objective that sits within the cryostat, enabling high efficiency collection of emitted photons without image distortions due to the cryostat windows. The locations of single InAs/GaAs quantum dots within a $>50$~$μ$m~$\times$~50~$μ$m field of view are determined with $\approx4.5$~nm uncertainty (one standard deviation) in a 1~s long acquisition. The uncertainty is determined through a combination of a maximum likelihood estimate for localizing the quantum dot emission, and a cross-correlation method for determining the alignment mark center. This location technique can be an important step in the high-throughput creation of nanophotonic devices that rely upon the interaction of highly confined optical modes with single quantum emitters.
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Submitted 21 December, 2016;
originally announced December 2016.
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Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
Authors:
Luca Sapienza,
** Liu,
** Dong Song,
Stefan Falt,
Werner Wegscheider,
Antonio Badolato,
Kartik Srinivasan
Abstract:
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical and scanning probe characterization techniques, we determine the position of single quantum dots with respect to comparatively large (100 nm to 1000 nm in-plane…
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We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical and scanning probe characterization techniques, we determine the position of single quantum dots with respect to comparatively large (100 nm to 1000 nm in-plane dimension) topographic features. We find that quantum dots often appear (>25% of the time) in the vicinity of these features, but generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions. This behavior is observed across multiple wafers produced in different growth chambers. Our characterization approach is relevant to applications in which single quantum dots are embedded within nanofabricated photonic devices, where such large surface features can affect the interaction with confined optical fields and the quality of the single-photon emission. In particular, we anticipate using this approach to screen quantum dots not only based on their optical properties, but also their surrounding surface topographies.
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Submitted 6 December, 2016;
originally announced December 2016.
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Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission
Authors:
Luca Sapienza,
Marcelo Davanco,
Antonio Badolato,
Kartik Srinivasan
Abstract:
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of quantum dots, presenting a challenge in creating devices that exploit the strong interaction of sing…
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Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of quantum dots, presenting a challenge in creating devices that exploit the strong interaction of single quantum dots with highly confined optical modes. Here, we present a photoluminescence imaging approach for locating single quantum dots with respect to alignment features with an average position uncertainty < 30 nm (< 10 nm when using a solid immersion lens), which represents an enabling technology for the creation of optimized single quantum dot devices. To that end, we create quantum dot single-photon sources, based on a circular Bragg grating geometry, that simultaneously exhibit high collection efficiency (48 % +/- 5 % into a 0.4 numerical aperture lens, close to the theoretically predicted value of 50 %), low multiphoton probability (g(2)(0) <1 %), and a significant Purcell enhancement factor (~ 3).
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Submitted 5 August, 2015; v1 submitted 24 March, 2015;
originally announced March 2015.
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Locating environmental charge impurities with confluent laser spectroscopy of multiple quantum dots
Authors:
M. Hauck,
F. Seilmeier,
S. E. Beavan,
A. Badolato,
P. M. Petroff,
A. Högele
Abstract:
We used resonant laser spectroscopy of multiple confocal InGaAs quantum dots to spatially locate charge fluctuators in the surrounding semiconductor matrix. By map** out the resonance condition between a narrow-band laser and the neutral exciton transitions of individual dots in a field effect device, we identified spectral discontinuities as arising from charging and discharging events that tak…
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We used resonant laser spectroscopy of multiple confocal InGaAs quantum dots to spatially locate charge fluctuators in the surrounding semiconductor matrix. By map** out the resonance condition between a narrow-band laser and the neutral exciton transitions of individual dots in a field effect device, we identified spectral discontinuities as arising from charging and discharging events that take place within the volume adjacent to the quantum dots. Our analysis suggests that residual carbon dopants are a major source of charge-fluctuating traps in quantum dot heterostructures.
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Submitted 6 October, 2014;
originally announced October 2014.
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Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics
Authors:
F. Dettwiler,
P. Fallahi,
D. Scholz,
E. Reiger,
D. Schuh,
A. Badolato,
W. Wegscheider,
D. M. Zumbühl
Abstract:
We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the do…
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We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.
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Submitted 2 April, 2014; v1 submitted 30 March, 2014;
originally announced March 2014.
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Multiple time scale blinking in InAs quantum dot single-photon sources
Authors:
Marcelo Davanco,
C. Stephen Hellberg,
Serkan Ates,
Antonio Badolato,
Kartik Srinivasan
Abstract:
We use photon correlation measurements to study blinking in single, epitaxially-grown self-assembled InAs quantum dots situated in circular Bragg grating and microdisk cavities. The normalized second-order correlation function g(2)(τ) is studied across eleven orders of magnitude in time, and shows signatures of blinking over timescales ranging from tens of nanoseconds to tens of milliseconds. The…
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We use photon correlation measurements to study blinking in single, epitaxially-grown self-assembled InAs quantum dots situated in circular Bragg grating and microdisk cavities. The normalized second-order correlation function g(2)(τ) is studied across eleven orders of magnitude in time, and shows signatures of blinking over timescales ranging from tens of nanoseconds to tens of milliseconds. The g(2)(τ) data is fit to a multi-level system rate equation model that includes multiple non-radiating (dark) states, from which radiative quantum yields significantly less than 1 are obtained. This behavior is observed even in situations for which a direct histogramming analysis of the emission time-trace data produces inconclusive results.
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Submitted 21 April, 2014; v1 submitted 3 June, 2013;
originally announced June 2013.
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Scalable qubit architecture based on holes in quantum dot molecules
Authors:
Sophia E. Economou,
Juan I. Climente,
Antonio Badolato,
Allan S. Bracker,
Daniel Gammon,
Matthew F. Doty
Abstract:
Spins confined in quantum dots are a leading candidate for solid-state quantum bits that can be coherently controlled by optical pulses. There are, however, many challenges to develo** a scalable multibit information processing device based on spins in quantum dots, including the natural inhomogeneous distribution of quantum dot energy levels, the difficulty of creating all-optical spin manipula…
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Spins confined in quantum dots are a leading candidate for solid-state quantum bits that can be coherently controlled by optical pulses. There are, however, many challenges to develo** a scalable multibit information processing device based on spins in quantum dots, including the natural inhomogeneous distribution of quantum dot energy levels, the difficulty of creating all-optical spin manipulation protocols compatible with nondestructive readout, and the substantial electron-nuclear hyperfine interaction-induced decoherence. Here, we present a scalable qubit design and device architecture based on the spin states of single holes confined in a quantum dot molecule. The quantum dot molecule qubit enables a new strategy for optical coherent control with dramatically enhanced wavelength tunability. The use of hole spins allows the suppression of decoherence via hyperfine interactions and enables coherent spin rotations using Raman transitions mediated by a hole-spin-mixed optically excited state. Because the spin mixing is present only in the optically excited state, dephasing and decoherence are strongly suppressed in the ground states that define the qubits and nondestructive readout is possible. We present the qubit and device designs and analyze the wavelength tunability and fidelity of gate operations that can be implemented using this strategy. We then present experimental and theoretical progress toward implementing this design.
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Submitted 24 September, 2012;
originally announced September 2012.
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Improving the performance of bright quantum dot single photon sources using amplitude modulation
Authors:
Serkan Ates,
Imad Agha,
Angelo Gulinatti,
Ivan Rech,
Antonio Badolato,
Kartik Srinivasan
Abstract:
Single epitaxially-grown semiconductor quantum dots have great potential as single photon sources for photonic quantum technologies, though in practice devices often exhibit non-ideal behavior. Here, we demonstrate that amplitude modulation can improve the performance of quantum-dot-based sources. Starting with a bright source consisting of a single quantum dot in a fiber-coupled microdisk cavity,…
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Single epitaxially-grown semiconductor quantum dots have great potential as single photon sources for photonic quantum technologies, though in practice devices often exhibit non-ideal behavior. Here, we demonstrate that amplitude modulation can improve the performance of quantum-dot-based sources. Starting with a bright source consisting of a single quantum dot in a fiber-coupled microdisk cavity, we use synchronized amplitude modulation to temporally filter the emitted light. We observe that the single photon purity, temporal overlap between successive emission events, and indistinguishability can be greatly improved with this technique. As this method can be applied to any triggered single photon source, independent of geometry and after device fabrication, it is a flexible approach to improve the performance of solid-state systems, which often suffer from excess dephasing and multi-photon background emission.
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Submitted 10 August, 2012;
originally announced August 2012.
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Two-photon interference using background-free quantum frequency conversion of single photons from a semiconductor quantum dot
Authors:
Serkan Ates,
Imad Agha,
Angelo Gulinatti,
Ivan Rech,
Matthew T. Rakher,
Antonio Badolato,
Kartik Srinivasan
Abstract:
We show that quantum frequency conversion (QFC) can overcome the spectral distinguishability common to inhomogeneously broadened solid-state quantum emitters. QFC is implemented by combining single photons from an InAs quantum dot (QD) at 980 nm with a 1550 nm pump laser in a periodically-poled lithium niobate (PPLN) waveguide to generate photons at 600 nm with a signal-to-background ratio exceedi…
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We show that quantum frequency conversion (QFC) can overcome the spectral distinguishability common to inhomogeneously broadened solid-state quantum emitters. QFC is implemented by combining single photons from an InAs quantum dot (QD) at 980 nm with a 1550 nm pump laser in a periodically-poled lithium niobate (PPLN) waveguide to generate photons at 600 nm with a signal-to-background ratio exceeding 100:1. Photon correlation and two-photon interference measurements confirm that both the single photon character and wavepacket interference of individual QD states are preserved during frequency conversion. Finally, we convert two spectrally separate QD transitions to the same wavelength in a single PPLN waveguide and show that the resulting field exhibits non-classical two-photon interference.
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Submitted 17 July, 2012;
originally announced July 2012.
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Background-free quantum frequency conversion of single photons from a semiconductor quantum dot
Authors:
Serkan Ates,
Imad Agha,
Antonio Badolato,
Kartik Srinivasan
Abstract:
We demonstrate background-free quantum frequency conversion of single photons from an epitaxially-grown InAs quantum dot. Single photons at \approx 980 nm are combined with a pump laser near 1550 nm inside a periodically-poled lithium niobate (PPLN) waveguide, generating single photons at \approx 600 nm. The large red-detuning between the pump and signal wavelengths ensures nearly background-free…
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We demonstrate background-free quantum frequency conversion of single photons from an epitaxially-grown InAs quantum dot. Single photons at \approx 980 nm are combined with a pump laser near 1550 nm inside a periodically-poled lithium niobate (PPLN) waveguide, generating single photons at \approx 600 nm. The large red-detuning between the pump and signal wavelengths ensures nearly background-free conversion, avoiding processes such as upconversion of anti-Stokes Raman scattered pump photons in the PPLN crystal. Second-order correlation measurements on the single photon stream are performed both before and after conversion, confirming the preservation of photon statistics during the frequency conversion process.
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Submitted 10 May, 2012;
originally announced May 2012.
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Bright single photon emission from a quantum dot in a circular Bragg grating microcavity
Authors:
Serkan Ates,
Luca Sapienza,
Marcelo Davanco,
Antonio Badolato,
Kartik Srinivasan
Abstract:
Bright single photon emission from single quantum dots in suspended circular Bragg grating microcavities is demonstrated. This geometry has been designed to achieve efficient (> 50 %) single photon extraction into a near-Gaussian shaped far-field pattern, modest (~10x) Purcell enhancement of the radiative rate, and a spectral bandwidth of a few nanometers. Measurements of fabricated devices show p…
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Bright single photon emission from single quantum dots in suspended circular Bragg grating microcavities is demonstrated. This geometry has been designed to achieve efficient (> 50 %) single photon extraction into a near-Gaussian shaped far-field pattern, modest (~10x) Purcell enhancement of the radiative rate, and a spectral bandwidth of a few nanometers. Measurements of fabricated devices show progress towards these goals, with collection efficiencies as high as ~10% demonstrated with moderate spectral bandwidth and rate enhancement. Photon correlation measurements are performed under above-bandgap excitation (pump wavelength = 780 nm to 820 nm) and confirm the single photon character of the collected emission. While the measured sources are all antibunched and dominantly composed of single photons, the multi-photon probability varies significantly. Devices exhibiting tradeoffs between collection efficiency, Purcell enhancement, and multi-photon probability are explored and the results are interpreted with the help of finite-difference time-domain simulations. Below-bandgap excitation resonant with higher states of the quantum dot and/or cavity (pump wavelength = 860 nm to 900 nm) shows a near-complete suppression of multi-photon events and may circumvent some of the aforementioned tradeoffs.
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Submitted 18 December, 2011;
originally announced December 2011.
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GHz bandwidth electro-optics of a single self-assembled quantum dot in a charge-tunable device
Authors:
Jonathan H. Prechtel,
Paul A. Dalgarno,
Robert H. Hadfield,
Jamie McFarlane,
Antonio Badolato,
Pierre M. Petroff,
Richard J. Warburton
Abstract:
The response of a single InGaAs quantum dot, embedded in a miniaturized charge-tunable device, to an applied GHz bandwidth electrical pulse is investigated via its optical response. Quantum dot response times of 1.0 \pm 0.1 ns are characterized via several different measurement techniques, demonstrating GHz bandwidth electrical control. Furthermore a novel optical detection technique based on reso…
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The response of a single InGaAs quantum dot, embedded in a miniaturized charge-tunable device, to an applied GHz bandwidth electrical pulse is investigated via its optical response. Quantum dot response times of 1.0 \pm 0.1 ns are characterized via several different measurement techniques, demonstrating GHz bandwidth electrical control. Furthermore a novel optical detection technique based on resonant electron-hole pair generation in the hybridization region is used to map fully the voltage pulse experienced by the quantum dot, showing in this case a simple exponential rise.
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Submitted 25 November, 2011;
originally announced November 2011.
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Ultrafast all-optical switching by single photons
Authors:
Thomas Volz,
Andreas Reinhard,
Martin Winger,
Antonio Badolato,
Kevin J. Hennessy,
Evelyn L. Hu,
Atac Imamoglu
Abstract:
An outstanding goal in quantum optics is the realization of fast optical non-linearities at the single-photon level. Such non-linearities would allow for the realization of optical devices with new functionalities such as a single-photon switch/transistor or a controlled-phase gate, which could form the basis of future quantum optical technologies. While non-linear optics effects at the single-emi…
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An outstanding goal in quantum optics is the realization of fast optical non-linearities at the single-photon level. Such non-linearities would allow for the realization of optical devices with new functionalities such as a single-photon switch/transistor or a controlled-phase gate, which could form the basis of future quantum optical technologies. While non-linear optics effects at the single-emitter level have been demonstrated in different systems, including atoms coupled to Fabry-Perot or toroidal micro-cavities, super-conducting qubits in strip-line resonators or quantum dots (QDs) in nano-cavities, none of these experiments so far has demonstrated single-photon switching on ultrafast timescales. Here, we demonstrate that in a strongly coupled QD-cavity system the presence of a single photon on one of the fundamental polariton transitions can turn on light scattering on a transition from the first to the second Jaynes-Cummings manifold with a switching time of 20 ps. As an additional device application, we use this non-linearity to implement a single-photon pulse-correlator. Our QD-cavity system could form the building-block of future high-bandwidth photonic networks operating in the quantum regime.
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Submitted 12 November, 2011;
originally announced November 2011.
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Probing single charge fluctuations in a semiconductor with laser spectroscopy on a quantum dot
Authors:
J. Houel,
A. Kuhlmann,
L. Greuter,
F. Xue,
M. Poggio,
B. D. Gerardot,
P. A. Dalgarno,
A. Badolato,
P. M. Petroff,
A. Ludwig,
D. Reuter,
A. D. Wieckand,
R. J. Warburton
Abstract:
We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +-5 nm resolution. The results identify a…
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We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +-5 nm resolution. The results identify and quantify the main source of charge noise in the commonly-used optical field-effect devices. Based on this understanding we achieve routinely close-totransform-limited quantum dot optical linewidths.
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Submitted 12 October, 2011;
originally announced October 2011.
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Laser spectroscopy of individual quantum dots charged with a single hole
Authors:
B. D. Gerardot,
R. J. Barbour,
D. Brunner,
P. A. Dalgarno,
A. Badolato,
N. Stoltz,
P. M. Petroff,
J. Houel,
R. J. Warburton
Abstract:
We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples exhibit larger inhomogeneous broadening (x3) and smaller absorption contrast (x10) than the n-doped sample. For X1+ in the Be-doped sample, a dot dependent non-linear…
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We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples exhibit larger inhomogeneous broadening (x3) and smaller absorption contrast (x10) than the n-doped sample. For X1+ in the Be-doped sample, a dot dependent non-linear Fano effect is observed, demonstrating coupling to degenerate continuum states. However, for the C-doped sample the X1+ lineshape and saturation broadening follows isolated atomic transition behaviour. This C-doped device structure is useful for single hole spin initialization, manipulation, and measurement.
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Submitted 20 September, 2011;
originally announced September 2011.
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Strongly correlated photons on a chip
Authors:
Andreas Reinhard,
Thomas Volz,
Martin Winger,
Antonio Badolato,
Kevin J. Hennessy,
Evelyn L. Hu,
Atac Imamoglu
Abstract:
Optical non-linearities at the single-photon level are key ingredients for future photonic quantum technologies. Prime candidates for the realization of strong photon-photon interactions necessary for implementing quantum information processing tasks as well as for studying strongly correlated photons in an integrated photonic device setting are quantum dots embedded in photonic crystal nanocaviti…
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Optical non-linearities at the single-photon level are key ingredients for future photonic quantum technologies. Prime candidates for the realization of strong photon-photon interactions necessary for implementing quantum information processing tasks as well as for studying strongly correlated photons in an integrated photonic device setting are quantum dots embedded in photonic crystal nanocavities. Here, we report strong quantum correlations between photons on picosecond timescales. We observe (a) photon antibunching upon resonant excitation of the lowest-energy polariton state, proving that the first cavity photon blocks the subsequent injection events, and (b) photon bunching when the laser field is in two-photon resonance with the polariton eigenstates of the second Jaynes-Cummings manifold, demonstrating that two photons at this color are more likely to be injected into the cavity jointly, than they would otherwise. Together,these results demonstrate unprecedented strong single-photon non-linearities, paving the way for realizing a single-photon transistor or a quantum optical Josephson interferometer.
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Submitted 15 August, 2011;
originally announced August 2011.
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Efficient quantum dot single photon extraction into an optical fiber using a nanophotonic directional coupler
Authors:
M. Davanco,
M. T. Rakher,
W. Wegscheider,
D. Schuh,
A. Badolato,
K. Srinivasan
Abstract:
We demonstrate a spectrally broadband and effcient technique for collecting photoluminescence from a single InAs quantum dot directly into a standard single mode optical fiber. In this approach, an optical fiber taper waveguide is placed in contact with a suspended GaAs nanophotonic waveguide with embedded quantum dots, forming an effcient and broadband directional coupler with standard optical fi…
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We demonstrate a spectrally broadband and effcient technique for collecting photoluminescence from a single InAs quantum dot directly into a standard single mode optical fiber. In this approach, an optical fiber taper waveguide is placed in contact with a suspended GaAs nanophotonic waveguide with embedded quantum dots, forming an effcient and broadband directional coupler with standard optical fiber input and output. Effcient photoluminescence collection over a wavelength range of tens of nanometers is demonstrated, and a maximum collection effciency of 6.05 % (corresponding single photon rate of 3.0 MHz) into a single mode optical fiber was estimated for a single quantum dot exciton.
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Submitted 27 September, 2011; v1 submitted 20 April, 2011;
originally announced April 2011.
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A circular dielectric grating for vertical extraction of single quantum dot emission
Authors:
M. Davanco,
M. T. Rakher,
D. Schuh,
A. Badolato,
K. Srinivasan
Abstract:
We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (approx. 5 nm) emission extraction from single InAs quantum dots. Simulations indicate that a dipole embedded in the nanostructure center radiates upwards into free space with a nearly Gaussian far-field, allowing a collection efficiency > 80 %…
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We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (approx. 5 nm) emission extraction from single InAs quantum dots. Simulations indicate that a dipole embedded in the nanostructure center radiates upwards into free space with a nearly Gaussian far-field, allowing a collection efficiency > 80 % with a high numerical aperture (NA=0.7) optic, and with 12X Purcell radiative rate enhancement. Fabricated devices exhibit an approx. 10 % photon collection efficiency with a NA=0.42 objective, a 20X improvement over quantum dots in unpatterned GaAs. A fourfold exciton lifetime reduction indicates moderate Purcell enhancement.
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Submitted 27 September, 2011; v1 submitted 1 April, 2011;
originally announced April 2011.
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A nanometer-scale optical electrometer
Authors:
A. N. Vamivakas,
Y. Zhao,
S. Falt,
A. Badolato,
J. M. Taylor,
M. Atature
Abstract:
Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present an alternative application for such devices, exploiting recent achievements of charge occupation control and the spectral tunability of the optical emission of…
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Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present an alternative application for such devices, exploiting recent achievements of charge occupation control and the spectral tunability of the optical emission of quantum dots by electric fields7 to demonstrate high-sensitivity electric field measurement. In contrast to existing nanometer-scale electric field sensors, such as single electron transistors8-11 and mechanical resonators12,13, our approach relies on homodyning light resonantly Rayleigh scattered from a quantum dot transition with the excitation laser and phase sensitive lock-in detection. This offers both static and transient field detection ability with high bandwidth operation and near unity quantum efficiency. Our theoretical estimation of the static field sensitivity for typical parameters, 0.5 V/m/ \surd Hz, compares favorably to the theoretical limit for single electron transistor-based electrometers. The sensitivity level of 5 V/m/ \surd Hz we report in this work, which corresponds to 6.4 * 10-6 e/ \surd Hz at a distance of 12 nm, is worse than this theoretical estimate, yet higher than any other result attained at 4.2 K or higher operation temperature.
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Submitted 7 January, 2011;
originally announced January 2011.
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Direct Measurement of Quantum Dot Spin Dynamics using Time-Resolved Resonance Fluorescence
Authors:
C. -Y. Lu,
Y. Zhao,
A. N. Vamivakas,
C. Matthiesen,
S. Fält,
A. Badolato,
M. Atatüre
Abstract:
We temporally resolve the resonance fluorescence from an electron spin confined to a single self-assembled quantum dot to measure directly the spin's optical initialization and natural relaxation timescales. Our measurements demonstrate that spin initialization occurs on the order of microseconds in the Faraday configuration when a laser resonantly drives the quantum dot transition. We show that…
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We temporally resolve the resonance fluorescence from an electron spin confined to a single self-assembled quantum dot to measure directly the spin's optical initialization and natural relaxation timescales. Our measurements demonstrate that spin initialization occurs on the order of microseconds in the Faraday configuration when a laser resonantly drives the quantum dot transition. We show that the mechanism mediating the optically induced spin-flip changes from electron-nuclei interaction to hole-mixing interaction at 0.6 Tesla external magnetic field. Spin relaxation measurements result in times on the order of milliseconds and suggest that a $B^{-5}$ magnetic field dependence, due to spin-orbit coupling, is sustained all the way down to 2.2 Tesla.
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Submitted 3 August, 2009;
originally announced August 2009.
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Resolution of the mystery of counter-intuitive photon correlations in far off-resonance emission from a quantum dot-cavity system
Authors:
Martin Winger,
Thomas Volz,
Guillaume Tarel,
Stefano Portolan,
Antonio Badolato,
Kevin Hennessy,
Evelyn Hu,
Alexios Beveratos,
Jonathan Finley,
Vincenzo Savona,
Atac Imamoglu
Abstract:
Cavity quantum-electrodynamics experiments using an atom coupled to a single radiation-field mode have played a central role in testing foundations of quantum mechanics, thus motivating solid-state implementations using single quantum dots coupled to monolithic nano-cavities. In stark contrast to their atom based counterparts, the latter experiments revealed strong cavity emission, even when the…
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Cavity quantum-electrodynamics experiments using an atom coupled to a single radiation-field mode have played a central role in testing foundations of quantum mechanics, thus motivating solid-state implementations using single quantum dots coupled to monolithic nano-cavities. In stark contrast to their atom based counterparts, the latter experiments revealed strong cavity emission, even when the quantum dot is far off resonance. Here we present experimental and theoretical results demonstrating that this effect arises from the mesoscopic nature of quantum dot confinement, ensuring the presence of a quasi-continuum of transitions between excited quantum dot states that are enhanced by the cavity mode. Our model fully explains photon correlation measurements demonstrating that photons emitted at the cavity frequency are essentially uncorrelated with each other even though they are generated by a single quantum dot.
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Submitted 23 November, 2009; v1 submitted 10 July, 2009;
originally announced July 2009.
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Confluence of resonant laser excitation and bi-directional quantum dot nuclear spin polarization
Authors:
C. Latta,
A. Högele,
Y. Zhao,
A. N. Vamivakas,
P. Maletinsky,
M. Kroner,
J. Dreiser,
I. Carusotto,
A. Badolato,
D. Schuh,
W. Wegscheider,
M. Atature,
A. Imamoglu
Abstract:
Resonant laser scattering along with photon correlation measurements have established the atom-like character of quantum dots. Here, we present measurements which challenge this identification for a wide range of experimental parameters: the absorption lineshapes that we measure at magnetic fields exceeding 1 Tesla indicate that the nuclear spins polarize by an amount that ensures locking of the…
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Resonant laser scattering along with photon correlation measurements have established the atom-like character of quantum dots. Here, we present measurements which challenge this identification for a wide range of experimental parameters: the absorption lineshapes that we measure at magnetic fields exceeding 1 Tesla indicate that the nuclear spins polarize by an amount that ensures locking of the quantum dot resonances to the incident laser frequency. In contrast to earlier experiments, this nuclear spin polarization is bi-directional, allowing the electron+nuclear spin system to track the changes in laser frequency dynamically on both sides of the quantum dot resonance. Our measurements reveal that the confluence of the laser excitation and nuclear spin polarization suppresses the fluctuations in the resonant absorption signal. A master equation analysis shows narrowing of the nuclear Overhauser field variance, pointing to potential applications in quantum information processing.
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Submitted 30 April, 2009;
originally announced April 2009.
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Tunable Raman Photons from a Single Quantum Dot
Authors:
G. Fernandez,
T. Volz,
R. Desbuquois,
A. Badolato,
A. Imamoglu
Abstract:
We report the observation of all-optically tunable Raman fluorescence from a single quantum dot. The Raman photons are produced in an optically-driven Lambda-system defined by subjecting the single electron charged quantum dot to a magnetic field in Voigt geometry. Detuning the driving laser from resonance, we tune the frequency of the Raman photons by about 2.5 GHz. The number of scattered phot…
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We report the observation of all-optically tunable Raman fluorescence from a single quantum dot. The Raman photons are produced in an optically-driven Lambda-system defined by subjecting the single electron charged quantum dot to a magnetic field in Voigt geometry. Detuning the driving laser from resonance, we tune the frequency of the Raman photons by about 2.5 GHz. The number of scattered photons and the linewdith of the Raman photons are investigated as a function of detuning. The study presented here could form the basis of a new technique for investigating spin-bath interactions in the solid state.
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Submitted 9 April, 2009;
originally announced April 2009.
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Polarization memory in single Quantum Dots
Authors:
E. Poem,
S. Khatsevich,
Y. Benny,
I. Marderfeld,
A. Badolato,
P. M. Petroff,
D. Gershoni
Abstract:
We measured the polarization memory of excitonic and biexcitonic optical transitions from single quantum dots at either positive, negative or neutral charge states. Positive, negative and no circular or linear polarization memory was observed for various spectral lines, under the same quasi-resonant excitation below the wetting layer band-gap. We developed a model which explains both qualitative…
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We measured the polarization memory of excitonic and biexcitonic optical transitions from single quantum dots at either positive, negative or neutral charge states. Positive, negative and no circular or linear polarization memory was observed for various spectral lines, under the same quasi-resonant excitation below the wetting layer band-gap. We developed a model which explains both qualitatively and quantitatively the experimentally measured polarization spectrum for all these optical transitions. We consider quite generally the loss of spin orientation of the photogenerated electron-hole pair during their relaxation towards the many-carrier ground states. Our analysis unambiguously demonstrates that while electrons maintain their initial spin polarization to a large degree, holes completely dephase.
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Submitted 25 February, 2009;
originally announced February 2009.
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Quantum dot spectroscopy using cavity QED
Authors:
Martin Winger,
Antonio Badolato,
Kevin Hennessy,
Evelyn Hu,
Atac Imamoglu
Abstract:
Cavity quantum electrodynamics has attracted substantial interest, both due to its potential role in the field of quantum information processing and as a testbed for basic experiments in quantum mechanics. Here, we show how cavity quantum electrodynamics using a tunable photonic crystal nanocavity in the strong coupling regime can be used for single quantum dot spectroscopy. From the distinctive…
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Cavity quantum electrodynamics has attracted substantial interest, both due to its potential role in the field of quantum information processing and as a testbed for basic experiments in quantum mechanics. Here, we show how cavity quantum electrodynamics using a tunable photonic crystal nanocavity in the strong coupling regime can be used for single quantum dot spectroscopy. From the distinctive avoided crossings observed in the strongly coupled system we can identify the neutral and single positively charged exciton as well as the biexciton transitions. Moreover we are able to investigate the fine structure of those transitions and to identify a novel cavity mediated mixing of bright and dark exciton states, where the hyperfine interactions with lattice nuclei presumably play a key role. These results are enabled by a deterministic coupling scheme which allowed us to achieve unprecedented coupling strengths in excess of 0.15 meV.
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Submitted 21 August, 2008;
originally announced August 2008.
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Dressed excitonic states and quantum interference in a three-level quantum dot ladder system
Authors:
B. D. Gerardot,
D. Brunner,
P. A. Dalgarno,
K. Karrai,
A. Badolato,
P. M. Petroff,
R. J. Warburton
Abstract:
We observe dressed states and quantum interference effects in a strongly driven three-level quantum dot ladder system. The effect of a strong coupling field on one dipole transition is measured by a weak probe field on the second dipole transition using differential reflection. When the coupling energy is much larger than both the homoge-neous and inhomogeneous linewidths an Autler-Townes splitt…
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We observe dressed states and quantum interference effects in a strongly driven three-level quantum dot ladder system. The effect of a strong coupling field on one dipole transition is measured by a weak probe field on the second dipole transition using differential reflection. When the coupling energy is much larger than both the homoge-neous and inhomogeneous linewidths an Autler-Townes splitting is observed. Striking differences are observed when the transitions resonant with the strong and weak fields are swapped, particularly when the coupling energy is nearly equal to the measured linewidth. This result is attributed to quantum interference: a modest destructive or constructive interference is observed depending on the pump / probe geometry. The data demonstrate that coher-ence of both the bi-exciton and the exciton is maintained in this solid-state system, even under intense illumina-tion, which is crucial for prospects in quantum information processing and non-linear optical devices.
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Submitted 5 June, 2008; v1 submitted 4 March, 2008;
originally announced March 2008.
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Coulomb interactions in single, charged self-assembled quantum dots: radiative lifetime and recombination energy
Authors:
P. A. Dalgarno,
J. M. Smith,
J. McFarlane,
B. D. Gerardot,
K. Karrai,
A. Badolato,
P. M. Petroff,
R. J. Warburton
Abstract:
We present results on the charge dependence of the radiative recombination lifetime, Tau, and the emission energy of excitons confined to single self-assembled InGaAs quantum dots. There are significant dot-to-dot fluctuations in the lifetimes for a particular emission energy. To reach general conclusions, we present the statistical behavior by analyzing data recorded on a large number of indivi…
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We present results on the charge dependence of the radiative recombination lifetime, Tau, and the emission energy of excitons confined to single self-assembled InGaAs quantum dots. There are significant dot-to-dot fluctuations in the lifetimes for a particular emission energy. To reach general conclusions, we present the statistical behavior by analyzing data recorded on a large number of individual quantum dots. Exciton charge is controlled with extremely high fidelity through an n-type field effect structure, providing access to the neutral exciton (X0), the biexciton (2X0) and the positively (X1+) and negatively (X1-) charged excitons. We find significant differences in the recombination lifetime of each exciton such that, on average, Tau(X1-) / Tau(X0) = 1.25, Tau(X1+) / Tau(X0) = 1.58 and Tau(2X0) / Tau(X0) = 0.65. We attribute the change in lifetime to significant changes in the single particle hole wave function on charging the dot, an effect more pronounced on charging X0 with a single hole than with a single electron. We verify this interpretation by recasting the experimental data on exciton energies in terms of Coulomb energies. We show directly that the electron-hole Coulomb energy is charge dependent, reducing in value by 5-10% in the presence of an additional electron, and that the electron-electron and hole-hole Coulomb energies are almost equal.
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Submitted 25 February, 2008;
originally announced February 2008.
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Optical detection of single electron spin resonance in a quantum dot
Authors:
Martin Kroner,
Kathrina M. Weiss,
Benjamin Biedermann,
Stefan Seidl,
Stefan Manus,
Alexander Holleitner,
Antonio Badolato,
Pierre M. Petroff,
Brian D. Gerardot,
Richard J. Warburton,
Khaled Karrai
Abstract:
We demonstrate optically detected spin resonance of a single electron confined to a self-assembled quantum dot. The dot is rendered dark by resonant optical pum** of the spin with a coherent laser. Contrast is restored by applying a radio frequency (rf) magnetic field at the spin resonance. The scheme is sensitive even to rf fields of just a few micro-T. In one case, the spin resonance behaves…
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We demonstrate optically detected spin resonance of a single electron confined to a self-assembled quantum dot. The dot is rendered dark by resonant optical pum** of the spin with a coherent laser. Contrast is restored by applying a radio frequency (rf) magnetic field at the spin resonance. The scheme is sensitive even to rf fields of just a few micro-T. In one case, the spin resonance behaves exactly as a driven 3-level quantum system (a lambda-system) with weak dam**. In another, the dot exhibits remarkably strong (67% signal recovery) and narrow (0.34 MHz) spin resonances with fluctuating resonant positions, evidence of unusual dynamic processes of non-Markovian character.
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Submitted 25 October, 2007;
originally announced October 2007.
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Strong Electron-Hole Exchange in Coherently Coupled Quantum Dots
Authors:
Stefan Falt,
Mete Atature,
Hakan E. Tureci,
Yong Zhao,
Antonio Badolato,
Atac Imamoglu
Abstract:
We have investigated few-body states in vertically stacked quantum dots. Due to small inter-dot tunneling rate, the coupling in our system is in a previously unexplored regime where electron-hole exchange is the dominant spin interaction. By tuning the gate bias, we are able to turn this coupling off and study a complementary regime where total electron spin is a good quantum number. The use of…
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We have investigated few-body states in vertically stacked quantum dots. Due to small inter-dot tunneling rate, the coupling in our system is in a previously unexplored regime where electron-hole exchange is the dominant spin interaction. By tuning the gate bias, we are able to turn this coupling off and study a complementary regime where total electron spin is a good quantum number. The use of differential transmission allows us to obtain unambiguous signatures of the interplay between electron and hole spin interactions. Small tunnel coupling also enables us to demonstrate all-optical charge sensing, where conditional exciton energy shift in one dot identifies the charging state of the coupled partner.
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Submitted 16 July, 2007;
originally announced July 2007.
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Strong extinction of a far-field laser beam by a single quantum dot
Authors:
A. N. Vamivakas,
M. Atature,
J. Dreiser,
S. T. Yilmaz,
A. Badolato,
A. K. Swan,
B. B. Goldberg,
A. Imamoglu,
M. S. Unlu
Abstract:
Through the utilization of index-matched GaAs immersion lens techniques we demonstrate a record extinction (12%) of a far-field focused laser by a single InAs/GaAs quantum dot. This contrast level enables us to report for the first time resonant laser transmission spectroscopy on a single InAs/GaAs quantum dot without the need for phase-sensitive lock-in detection.
Through the utilization of index-matched GaAs immersion lens techniques we demonstrate a record extinction (12%) of a far-field focused laser by a single InAs/GaAs quantum dot. This contrast level enables us to report for the first time resonant laser transmission spectroscopy on a single InAs/GaAs quantum dot without the need for phase-sensitive lock-in detection.
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Submitted 20 June, 2007;
originally announced June 2007.
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Polarization sensitive spectroscopy of charged Quantum Dots
Authors:
E. Poem,
J. Shemesh,
I. Marderfeld,
D. Galushko,
N. Akopian,
D. Gershoni,
B. D. Gerardot,
A. Badolato,
P. M. Petroff
Abstract:
We present an experimental and theoretical study of the polarized photoluminescence spectrum of single semiconductor quantum dots in various charge states. We compare our high resolution polarization sensitive spectral measurements with a new many-carrier theoretical model, which was developed for this purpose. The model considers both the isotropic and anisotropic exchange interactions between…
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We present an experimental and theoretical study of the polarized photoluminescence spectrum of single semiconductor quantum dots in various charge states. We compare our high resolution polarization sensitive spectral measurements with a new many-carrier theoretical model, which was developed for this purpose. The model considers both the isotropic and anisotropic exchange interactions between all participating electron-hole pairs. With this addition, we calculate both the energies and polarizations of all optical transitions between collective, quantum dot confined charge carrier states. We succeed in identifying most of the measured spectral lines. In particular, the lines resulting from singly-, doubly- and triply- negatively charged excitons and biexcitons. We demonstrate that lines emanating from evenly charged states are linearly polarized. Their polarization direction does not necessarily coincide with the traditional crystallographic direction. It depends on the shells of the single carriers, which participate in the recombination process.
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Submitted 5 October, 2007; v1 submitted 9 June, 2007;
originally announced June 2007.
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Optical investigations of quantum-dot spin dynamics
Authors:
Jan Dreiser,
Mete Atature,
Christophe Galland,
Tina Muller,
Antonio Badolato,
Atac Imamoglu
Abstract:
We have performed all-optical measurements of spin relaxation in single self-assembled InAs/GaAs quantum dots (QD) as a function of static external electric and magnetic fields. To study QD spin dynamics we measure the degree of resonant absorption which results from a competition between optical spin pum** induced by the resonant laser field and spin relaxation induced by reservoirs. Fundamen…
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We have performed all-optical measurements of spin relaxation in single self-assembled InAs/GaAs quantum dots (QD) as a function of static external electric and magnetic fields. To study QD spin dynamics we measure the degree of resonant absorption which results from a competition between optical spin pum** induced by the resonant laser field and spin relaxation induced by reservoirs. Fundamental interactions that determine spin dynamics in QDs are hyperfine coupling to QD nuclear spin ensembles, spin-phonon coupling and exchange-type interactions with a nearby Fermi sea of electrons. We show that the strength of spin relaxation generated by the three fundamental interactions can be changed by up to five orders of magnitude upon varying the applied electric and magnetic fields. We find that the strength of optical spin pum** that we use to study the spin relaxation is determined predominantly by hyperfine-induced mixing of single-electron spin states at low magnetic fields and heavy-light hole mixing at high magnetic fields. Our measurements allow us to determine the rms value of the hyperfine (Overhauser) field to be ~15 mTesla with an electron g-factor of g_e=0.6 and a hole mixing strength of |epsilon|^2 = 0.0005.
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Submitted 24 May, 2007;
originally announced May 2007.
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Dynamics of Quantum Dot Nuclear Spin Polarization Controlled by a Single Electron
Authors:
P. Maletinsky,
A. Badolato,
A. Imamoglu
Abstract:
We present an experimental study of the dynamics underlying the buildup and decay of dynamical nuclear spin polarization in a single semiconductor quantum dot. Our experiment shows that the nuclei can be polarized on a time scale of a few milliseconds, while their decay dynamics depends drastically on external parameters. We show that a single electron can very efficiently depolarize the nuclear…
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We present an experimental study of the dynamics underlying the buildup and decay of dynamical nuclear spin polarization in a single semiconductor quantum dot. Our experiment shows that the nuclei can be polarized on a time scale of a few milliseconds, while their decay dynamics depends drastically on external parameters. We show that a single electron can very efficiently depolarize the nuclear spins and discuss two processes that can cause this depolarization. Conversely, in the absence of a quantum dot electron, the lifetime of nuclear spin polarization is on the time scale of a second, most likely limited by the non-secular terms of the nuclear dipole-dipole interaction. We can further suppress this depolarization rate by 1-2 orders of magnitude by applying an external magnetic field exceeding 1 mT.
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Submitted 27 April, 2007;
originally announced April 2007.
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Contrast in transmission spectroscopy of a single quantum dot
Authors:
B. D. Gerardot,
S. Seidl,
P. A. Dalgarno,
M. Kroner,
K. Karrai,
A. Badolato,
P. M. Petroff,
R. J. Warburton
Abstract:
We perform transmission spectroscopy on single quantum dots and examine the effects of a resident carriers spin, the incident laser spot size, polarization, and power on the experimental contrast. We demonstrate a factor of 4 improvement in the maximum contrast by using a solid immersion lens to decrease the spot area. This increase yields a maximum signal to noise ratio of 2000 Hz-1/2, which wi…
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We perform transmission spectroscopy on single quantum dots and examine the effects of a resident carriers spin, the incident laser spot size, polarization, and power on the experimental contrast. We demonstrate a factor of 4 improvement in the maximum contrast by using a solid immersion lens to decrease the spot area. This increase yields a maximum signal to noise ratio of 2000 Hz-1/2, which will allow for MHz detection frequencies. We anticipate that this improvement will allow further investigation of spectral fluctuation and open up the feasibility for an all-optical read-out of an electron spin in a quantum dot.
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Submitted 25 January, 2007;
originally announced January 2007.
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Observation of Faraday rotation from a single confined spin
Authors:
Mete Atature,
Jan Dreiser,
Antonio Badolato,
Atac Imamoglu
Abstract:
Ability to read-out the state of a single confined spin lies at the heart of solid-state quantum information processing. While all-optical spin measurements using Faraday rotation has been successfully implemented in ensembles of semiconductor spins, read-out of a single semiconductor spin has only been achieved using transport measurements based on spin-charge conversion. Here, we demonstrate a…
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Ability to read-out the state of a single confined spin lies at the heart of solid-state quantum information processing. While all-optical spin measurements using Faraday rotation has been successfully implemented in ensembles of semiconductor spins, read-out of a single semiconductor spin has only been achieved using transport measurements based on spin-charge conversion. Here, we demonstrate an all-optical dispersive measurement of the spin-state of a single electron trapped in a semiconductor quantum dot. We obtain information on the spin state through conditional Faraday rotation of a spectrally detuned optical field, induced by the polarization- and spin-selective trion (charged quantum dot) transitions. To assess the sensitivity of the technique, we use an independent resonant laser for spin-state preparation. An all-optical dispersive measurement on single spins has the important advantage of channeling the measurement back-action onto a conjugate observable, thereby allowing for repetitive or continuous quantum nondemolition (QND) read-out of the spin-state. We infer from our results that there are of order unity back-action induced spin-flip Raman scattering events within our measurement timescale. Therefore, straightforward improvements such as the use of a solid-immersion lens and higher efficiency detectors would allow for back-action evading spin measurements, without the need for a cavity.
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Submitted 13 October, 2006;
originally announced October 2006.
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Quantum nature of a strongly-coupled single quantum dot-cavity system
Authors:
K. Hennessy,
A. Badolato,
M. Winger,
D. Gerace,
M. Atature,
S. Gulde,
S. Falt,
E. L. Hu,
A. Imamoglu
Abstract:
Cavity quantum electrodynamics (QED) studies the interaction between a quantum emitter and a single radiation-field mode. When an atom is in strong coupling with a cavity mode1,2, it is possible to realize key quantum information processing (QIP) tasks, such as controlled coherent coupling and entanglement of distinguishable quantum systems. Realizing these tasks in the solid state is clearly de…
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Cavity quantum electrodynamics (QED) studies the interaction between a quantum emitter and a single radiation-field mode. When an atom is in strong coupling with a cavity mode1,2, it is possible to realize key quantum information processing (QIP) tasks, such as controlled coherent coupling and entanglement of distinguishable quantum systems. Realizing these tasks in the solid state is clearly desirable, and coupling semiconductor self-assembled quantum dots (QDs) to monolithic optical cavities is a promising route to this end. However, validating the efficacy of QDs in QIP applications requires confirmation of the quantum nature of the QD-cavity system in the strong coupling regime. Here we find a confirmation by observing quantum correlations in photoluminescence (PL) from a photonic crystal (PC) nanocavity3-5 interacting with one, and only one, QD located precisely at the cavity electric field maximum. When off-resonance, photon emission from the cavity mode and QD excitons is anti-correlated at the level of single quanta, proving that the mode is driven solely by the QD despite an energy mis-match between cavity and excitons. When tuned into resonance, the exciton and photon enter the strong-coupling regime of cavity-QED and the QD lifetime reduces by a factor of 120. The photon stream from the cavity becomes anti-bunched, proving that the coupled exciton/photon system is in the quantum anharmonic regime. Our observations unequivocally show that QIP tasks requiring the quantum nonlinear regime are achievable in the solid state.
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Submitted 5 October, 2006;
originally announced October 2006.
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Nonlinear dynamics of quantum dot nuclear spins
Authors:
P. Maletinsky,
C. W. Lai,
A. Badolato,
A. Imamoglu
Abstract:
We report manifestly nonlinear dependence of quantum dot nuclear spin polarization on applied magnetic fields. Resonant absorption and emission of circularly polarized radiation pumps the resident quantum dot electron spin, which in turn leads to nuclear spin polarization due to hyperfine interaction. We observe that the resulting Overhauser field exhibits hysteresis as a function of the externa…
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We report manifestly nonlinear dependence of quantum dot nuclear spin polarization on applied magnetic fields. Resonant absorption and emission of circularly polarized radiation pumps the resident quantum dot electron spin, which in turn leads to nuclear spin polarization due to hyperfine interaction. We observe that the resulting Overhauser field exhibits hysteresis as a function of the external magnetic field. This hysteresis is a consequence of the feedback of the Overhauser field on the nuclear spin cooling rate. A semi-classical model describing the coupled nuclear and electron spin dynamics successfully explains the observed hysteresis but leaves open questions for the low field behaviour of the nuclear spin polarization.
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Submitted 12 September, 2006;
originally announced September 2006.
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Manipulating exciton fine-structure in quantum dots with a lateral electric field
Authors:
B. D. Gerardot,
S. Seidl,
P. A. Dalgarno,
R. J. Warburton,
D. Granados,
J. M. Garcia,
K. Kowalik,
O. Krebs,
K. Karrai,
A. Badolato,
P. M. Petroff
Abstract:
The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. We show that the lateral electric field strongly affects the exciton fine structure splitting due to active…
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The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. We show that the lateral electric field strongly affects the exciton fine structure splitting due to active manipulation of the single particle wave-functions. Remarkably, the splitting can be tuned over large values and through zero.
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Submitted 31 August, 2006;
originally announced August 2006.
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Validation of Lasing in Active Nanocavities
Authors:
Yong-Seok Choi,
Matthew T. Rakher,
Kevin Hennessy,
Stefan Strauf,
Antonio Badolato,
Pierre M. Petroff,
Dirk Bouwmeester,
Evelyn L. Hu
Abstract:
An unambiguous proof of lasing in an active nanocavity with ultrahigh spontaneous emission coupling factor (beta = 0.65) is presented. To distinguish the subtle lasing threshold features from possible material-related phenomena, such as saturable absorption in the gain medium, a series of active nanocavities with different values of beta have been designed to systematically approach the high-bet…
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An unambiguous proof of lasing in an active nanocavity with ultrahigh spontaneous emission coupling factor (beta = 0.65) is presented. To distinguish the subtle lasing threshold features from possible material-related phenomena, such as saturable absorption in the gain medium, a series of active nanocavities with different values of beta have been designed to systematically approach the high-beta device. The demonstration of the lasing threshold is obtained through the observation of the transition from thermal to coherent light photon statistics that is well understood and identified in the beta << 1 lasing regime. The systematic investigation allows a more definitive validation of the onset of lasing in these active nanocavities.
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Submitted 24 January, 2006; v1 submitted 24 January, 2006;
originally announced January 2006.
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Knight Field Enabled Nuclear Spin Polarization in Single Quantum Dots
Authors:
C. W. Lai,
P. Maletinsky,
A. Badolato,
A. Imamoglu
Abstract:
We demonstrate dynamical nuclear spin polarization in the absence of an external magnetic field, by resonant circularly polarized optical excitation of a single electron or hole charged quantum dot. Optical pum** of the electron spin induces an effective inhomogeneous magnetic (Knight) field that determines the direction along which nuclear spins could polarize and enables nuclear-spin cooling…
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We demonstrate dynamical nuclear spin polarization in the absence of an external magnetic field, by resonant circularly polarized optical excitation of a single electron or hole charged quantum dot. Optical pum** of the electron spin induces an effective inhomogeneous magnetic (Knight) field that determines the direction along which nuclear spins could polarize and enables nuclear-spin cooling by suppressing depolarization induced by nuclear dipole-dipole interactions. Our observations suggest a new mechanism for spin-polarization where spin exchange with an electron reservoir plays a crucial role. These experiments constitute a first step towards quantum measurement of the Overhauser field.
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Submitted 13 December, 2005;
originally announced December 2005.
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Self-tuned quantum dot gain in photonic crystal lasers
Authors:
S. Strauf,
K. Hennessy,
M. T. Rakher,
Y. -S. Choi,
A. Badolato,
L. C. Andreani,
E. L. Hu,
P. M. Petroff,
D. Bouwmeester
Abstract:
We demonstrate that very few (1 to 3) quantum dots as a gain medium are sufficient to realize a photonic crystal laser based on a high-quality nanocavity. Photon correlation measurements show a transition from a thermal to a coherent light state proving that lasing action occurs at ultra-low thresholds. Observation of lasing is unexpected since the cavity mode is in general not resonant with the…
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We demonstrate that very few (1 to 3) quantum dots as a gain medium are sufficient to realize a photonic crystal laser based on a high-quality nanocavity. Photon correlation measurements show a transition from a thermal to a coherent light state proving that lasing action occurs at ultra-low thresholds. Observation of lasing is unexpected since the cavity mode is in general not resonant with the discrete quantum dot states and emission at those frequencies is suppressed. In this situation, the quasi-continuous quantum dot states become crucial since they provide an energy-transfer channel into the lasing mode, effectively leading to a self-tuned resonance for the gain medium.
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Submitted 20 November, 2005;
originally announced November 2005.
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Absorptive and dispersive optical responses of excitons in a single quantum dot
Authors:
B. Alén,
A. Högele,
M. Kroner,
S. Seidl,
K. Karrai,
R. J. Warburton,
A. Badolato,
G. Medeiros-Ribeiro,
P. M. Petroff
Abstract:
We have determined both the real and imaginary parts of the dielectric polarizability of a single quantum dot. The experiment is based on the observation and the manipulation of Rayleigh scattering at photon frequencies near the resonance of an optical exciton transition in single self-assembled InAs and InGaAs quantum dots. The interference between the narrow-band laser field and the weak elect…
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We have determined both the real and imaginary parts of the dielectric polarizability of a single quantum dot. The experiment is based on the observation and the manipulation of Rayleigh scattering at photon frequencies near the resonance of an optical exciton transition in single self-assembled InAs and InGaAs quantum dots. The interference between the narrow-band laser field and the weak electromagnetic field coherently scattered by the quantum dot is detected with a cryogenic Fabry-Perot setup by combined differential transmission and reflectivity measurements.
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Submitted 3 December, 2007; v1 submitted 5 September, 2005;
originally announced September 2005.
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Frequency control of photonic crystal membrane resonators by mono-layer deposition
Authors:
Stefan Strauf,
Matthew T. Rakher,
Itai Carmeli,
Kevin Hennessy,
Cedrik Meier,
Antonio Badolato,
Michiel J. A. DeDood,
Pierre M. Petroff,
Evelyn L. Hu,
Beth Gwynn,
Dirk Bouwmeester
Abstract:
We study the response of GaAs photonic crystal membrane resonators to thin film deposition. Slow spectral shifts of the cavity mode of several nanometers are observed at low temperatures, caused by cryo-gettering of background molecules. Heating the membrane resets the drift and shielding will prevent drift altogether. In order to explore the drift as a tool to detect surface layers, or to inten…
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We study the response of GaAs photonic crystal membrane resonators to thin film deposition. Slow spectral shifts of the cavity mode of several nanometers are observed at low temperatures, caused by cryo-gettering of background molecules. Heating the membrane resets the drift and shielding will prevent drift altogether. In order to explore the drift as a tool to detect surface layers, or to intentionally shift the cavity resonance frequency, we studied the effect of self-assembled monolayers of polypeptide molecules attached to the membranes. The 2 nm thick monolayers lead to a discrete step in the resonance frequency and partially passivate the surface.
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Submitted 11 August, 2005;
originally announced August 2005.
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Photon statistics from coupled quantum dots
Authors:
Brian D. Gerardot,
Stefan Strauf,
Michiel J. A. de Dood,
Andrey M. Bychkov,
Antonio Badolato,
Kevin Hennessy,
Evelyn L. Hu,
Dirk Bouwmeester,
Pierre M. Petroff
Abstract:
We present an optical study of closely-spaced self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the quantum dots but also insight into the coupling mechanism. Our results are in agreement with recent theories predicting that tunneling is largely suppressed between…
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We present an optical study of closely-spaced self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the quantum dots but also insight into the coupling mechanism. Our results are in agreement with recent theories predicting that tunneling is largely suppressed between nonidentical quantum dots and that the interaction is instead dominated by dipole-dipole coupling and phonon-assisted energy transfer processes.
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Submitted 25 July, 2005;
originally announced July 2005.
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Giant optical anisotropy in a single InAs quantum dot in a very dilute quantum-dot ensemble
Authors:
I. Favero,
Guillaume Cassabois,
A. Jankovic,
R. Ferreira,
D. Darson,
C. Voisin,
C. Delalande,
Ph. Roussignol,
A. Badolato,
P. M. Petroff,
J. M. Gerard
Abstract:
We present the experimental evidence of giant optical anisotropy in single InAs quantum dots. Polarization-resolved photoluminescence spectroscopy reveals a linear polarization ratio with huge fluctuations, from one quantum dot to another, in sign and in magnitude with absolute values up to 82%. Systematic measurements on hundreds of quantum dots coming from two different laboratories demonstrat…
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We present the experimental evidence of giant optical anisotropy in single InAs quantum dots. Polarization-resolved photoluminescence spectroscopy reveals a linear polarization ratio with huge fluctuations, from one quantum dot to another, in sign and in magnitude with absolute values up to 82%. Systematic measurements on hundreds of quantum dots coming from two different laboratories demonstrate that the giant optical anisotropy is an intrinsic feature of dilute quantum-dot arrays.
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Submitted 18 November, 2004;
originally announced November 2004.
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Spin-selective optical absorption of singly charged excitons in a quantum dot
Authors:
A. Högele,
M. Kroner,
S. Seidl,
K. Karrai,
M. Atatüre,
J. Dreiser,
A. Imamoğlu,
R. J. Warburton,
A. Badolato,
B. D. Gerardot,
P. M. Petroff
Abstract:
We investigate high resolution laser absorption spectroscopy of a single InGaAs/GaAs self-assembled quantum dot embedded in a field-effect structure. We show experimentally that the interband optical absorption to the lower Zeeman branch of the singly charged exciton is strongly inhibited due to spin (Pauli) blockade of the optical transition. At high magnetic fields the optical absorption to th…
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We investigate high resolution laser absorption spectroscopy of a single InGaAs/GaAs self-assembled quantum dot embedded in a field-effect structure. We show experimentally that the interband optical absorption to the lower Zeeman branch of the singly charged exciton is strongly inhibited due to spin (Pauli) blockade of the optical transition. At high magnetic fields the optical absorption to the upper Zeeman branch dominates the absorption spectrum. We find however that the spin blockade is not complete and a 10% leakage remains at high magnetic fields. Applying a gate voltage to empty the dot of its resident electron turns off the spin blockade. This effect is observed at 1.5 K and up to 9 Tesla.
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Submitted 6 September, 2005; v1 submitted 20 October, 2004;
originally announced October 2004.
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Evidence of two-electron tunneling interference in Nb/InAs junctions
Authors:
Antonio Badolato,
Francesco Giazotto,
Marco Lazzarino,
Pasqualantonio **ue,
Fabio Beltram,
Carlo Lucheroni,
Rosario Fazio
Abstract:
The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasi-classical Green-function approach and unambiguously show the physical processes giving ri…
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The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasi-classical Green-function approach and unambiguously show the physical processes giving rise to the observed excess zero-bias conductivity.
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Submitted 8 July, 2000;
originally announced July 2000.