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Quantum Confined Luminescence in Two dimensions
Authors:
Saiphaneendra Bachu,
Fatimah Habis,
Benjamin Huet,
Steffi Y. Woo,
Leixin Miao,
Danielle Reifsnyder Hickey,
Gwangwoo Kim,
Nicholas Trainor,
Kenji Watanabe,
Takashi Taniguchi,
Deep Jariwala,
Joan M. Redwing,
Yuanxi Wang,
Mathieu Kociak,
Luiz H. G. Tizei,
Nasim Alem
Abstract:
Achieving localized light emission from monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) embedded in the matrix of another TMD has been theoretically proposed but not experimentally proven. In this study, we used cathodoluminescence performed in a scanning transmission electron microscope to unambiguously resolve localized light emission from 2D monolayer MoSe2 nanodots of va…
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Achieving localized light emission from monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) embedded in the matrix of another TMD has been theoretically proposed but not experimentally proven. In this study, we used cathodoluminescence performed in a scanning transmission electron microscope to unambiguously resolve localized light emission from 2D monolayer MoSe2 nanodots of varying sizes embedded in monolayer WSe2 matrix. We observed that the light emission strongly depends on the nanodot size wherein the emission is dominated by MoSe2 excitons in dots larger than 85 nm, and by MoSe2/WSe2 interface excitons below 50 nm. Interestingly, at extremely small dot sizes (< 10 nm), the electron energy levels in the nanodot become quantized, as demonstrated by a striking blue-shift in interface exciton emission, thus inducing quantum confined luminescence. These results establish controllable light emission from spatially confined 2D nanodots, which holds potential to be generalized to other 2D systems towards future nanophotonic applications.
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Submitted 14 June, 2024;
originally announced June 2024.
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STRIDE: Single-video based Temporally Continuous Occlusion Robust 3D Pose Estimation
Authors:
Rohit Lal,
Saketh Bachu,
Yash Garg,
Arindam Dutta,
Calvin-Khang Ta,
Dripta S. Raychaudhuri,
Hannah Dela Cruz,
M. Salman Asif,
Amit K. Roy-Chowdhury
Abstract:
The capability to accurately estimate 3D human poses is crucial for diverse fields such as action recognition, gait recognition, and virtual/augmented reality. However, a persistent and significant challenge within this field is the accurate prediction of human poses under conditions of severe occlusion. Traditional image-based estimators struggle with heavy occlusions due to a lack of temporal co…
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The capability to accurately estimate 3D human poses is crucial for diverse fields such as action recognition, gait recognition, and virtual/augmented reality. However, a persistent and significant challenge within this field is the accurate prediction of human poses under conditions of severe occlusion. Traditional image-based estimators struggle with heavy occlusions due to a lack of temporal context, resulting in inconsistent predictions. While video-based models benefit from processing temporal data, they encounter limitations when faced with prolonged occlusions that extend over multiple frames. This challenge arises because these models struggle to generalize beyond their training datasets, and the variety of occlusions is hard to capture in the training data. Addressing these challenges, we propose STRIDE (Single-video based TempoRally contInuous occlusion Robust 3D Pose Estimation), a novel Test-Time Training (TTT) approach to fit a human motion prior for each video. This approach specifically handles occlusions that were not encountered during the model's training. By employing STRIDE, we can refine a sequence of noisy initial pose estimates into accurate, temporally coherent poses during test time, effectively overcoming the limitations of prior methods. Our framework demonstrates flexibility by being model-agnostic, allowing us to use any off-the-shelf 3D pose estimation method for improving robustness and temporal consistency. We validate STRIDE's efficacy through comprehensive experiments on challenging datasets like Occluded Human3.6M, Human3.6M, and OCMotion, where it not only outperforms existing single-image and video-based pose estimation models but also showcases superior handling of substantial occlusions, achieving fast, robust, accurate, and temporally consistent 3D pose estimates.
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Submitted 13 March, 2024; v1 submitted 24 December, 2023;
originally announced December 2023.
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Causal Inference Using LLM-Guided Discovery
Authors:
Aniket Vashishtha,
Abbavaram Gowtham Reddy,
Abhinav Kumar,
Saketh Bachu,
Vineeth N Balasubramanian,
Amit Sharma
Abstract:
At the core of causal inference lies the challenge of determining reliable causal graphs solely based on observational data. Since the well-known backdoor criterion depends on the graph, any errors in the graph can propagate downstream to effect inference. In this work, we initially show that complete graph information is not necessary for causal effect inference; the topological order over graph…
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At the core of causal inference lies the challenge of determining reliable causal graphs solely based on observational data. Since the well-known backdoor criterion depends on the graph, any errors in the graph can propagate downstream to effect inference. In this work, we initially show that complete graph information is not necessary for causal effect inference; the topological order over graph variables (causal order) alone suffices. Further, given a node pair, causal order is easier to elicit from domain experts compared to graph edges since determining the existence of an edge can depend extensively on other variables. Interestingly, we find that the same principle holds for Large Language Models (LLMs) such as GPT-3.5-turbo and GPT-4, motivating an automated method to obtain causal order (and hence causal effect) with LLMs acting as virtual domain experts. To this end, we employ different prompting strategies and contextual cues to propose a robust technique of obtaining causal order from LLMs. Acknowledging LLMs' limitations, we also study possible techniques to integrate LLMs with established causal discovery algorithms, including constraint-based and score-based methods, to enhance their performance. Extensive experiments demonstrate that our approach significantly improves causal ordering accuracy as compared to discovery algorithms, highlighting the potential of LLMs to enhance causal inference across diverse fields.
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Submitted 23 October, 2023;
originally announced October 2023.
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Building a Winning Team: Selecting Source Model Ensembles using a Submodular Transferability Estimation Approach
Authors:
Vimal K B,
Saketh Bachu,
Tanmay Garg,
Niveditha Lakshmi Narasimhan,
Raghavan Konuru,
Vineeth N Balasubramanian
Abstract:
Estimating the transferability of publicly available pretrained models to a target task has assumed an important place for transfer learning tasks in recent years. Existing efforts propose metrics that allow a user to choose one model from a pool of pre-trained models without having to fine-tune each model individually and identify one explicitly. With the growth in the number of available pre-tra…
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Estimating the transferability of publicly available pretrained models to a target task has assumed an important place for transfer learning tasks in recent years. Existing efforts propose metrics that allow a user to choose one model from a pool of pre-trained models without having to fine-tune each model individually and identify one explicitly. With the growth in the number of available pre-trained models and the popularity of model ensembles, it also becomes essential to study the transferability of multiple-source models for a given target task. The few existing efforts study transferability in such multi-source ensemble settings using just the outputs of the classification layer and neglect possible domain or task mismatch. Moreover, they overlook the most important factor while selecting the source models, viz., the cohesiveness factor between them, which can impact the performance and confidence in the prediction of the ensemble. To address these gaps, we propose a novel Optimal tranSport-based suBmOdular tRaNsferability metric (OSBORN) to estimate the transferability of an ensemble of models to a downstream task. OSBORN collectively accounts for image domain difference, task difference, and cohesiveness of models in the ensemble to provide reliable estimates of transferability. We gauge the performance of OSBORN on both image classification and semantic segmentation tasks. Our setup includes 28 source datasets, 11 target datasets, 5 model architectures, and 2 pre-training methods. We benchmark our method against current state-of-the-art metrics MS-LEEP and E-LEEP, and outperform them consistently using the proposed approach.
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Submitted 5 September, 2023;
originally announced September 2023.
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Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures
Authors:
Gwangwoo Kim,
Benjamin Huet,
Christopher E. Stevens,
Kiyoung Jo,
Jeng-Yuan Tsai,
Saiphaneendra Bachu,
Meghan Leger,
Kyung Yeol Ma,
Nicholas R. Glavin,
Hyeon Suk Shin,
Nasim Alem,
Qimin Yan,
Joshua R. Hedrickson,
Joan M. Redwing,
Deep Jariwala
Abstract:
Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engine…
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Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe2. Finally, single-photon emission was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors.
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Submitted 12 July, 2023;
originally announced July 2023.
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On Counterfactual Data Augmentation Under Confounding
Authors:
Abbavaram Gowtham Reddy,
Saketh Bachu,
Saloni Dash,
Charchit Sharma,
Amit Sharma,
Vineeth N Balasubramanian
Abstract:
Counterfactual data augmentation has recently emerged as a method to mitigate confounding biases in the training data. These biases, such as spurious correlations, arise due to various observed and unobserved confounding variables in the data generation process. In this paper, we formally analyze how confounding biases impact downstream classifiers and present a causal viewpoint to the solutions b…
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Counterfactual data augmentation has recently emerged as a method to mitigate confounding biases in the training data. These biases, such as spurious correlations, arise due to various observed and unobserved confounding variables in the data generation process. In this paper, we formally analyze how confounding biases impact downstream classifiers and present a causal viewpoint to the solutions based on counterfactual data augmentation. We explore how removing confounding biases serves as a means to learn invariant features, ultimately aiding in generalization beyond the observed data distribution. Additionally, we present a straightforward yet powerful algorithm for generating counterfactual images, which effectively mitigates the influence of confounding effects on downstream classifiers. Through experiments on MNIST variants and the CelebA datasets, we demonstrate how our simple augmentation method helps existing state-of-the-art methods achieve good results.
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Submitted 21 November, 2023; v1 submitted 29 May, 2023;
originally announced May 2023.
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Towards Learning and Explaining Indirect Causal Effects in Neural Networks
Authors:
Abbavaram Gowtham Reddy,
Saketh Bachu,
Harsharaj Pathak,
Benin L Godfrey,
Vineeth N. Balasubramanian,
Varshaneya V,
Satya Narayanan Kar
Abstract:
Recently, there has been a growing interest in learning and explaining causal effects within Neural Network (NN) models. By virtue of NN architectures, previous approaches consider only direct and total causal effects assuming independence among input variables. We view an NN as a structural causal model (SCM) and extend our focus to include indirect causal effects by introducing feedforward conne…
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Recently, there has been a growing interest in learning and explaining causal effects within Neural Network (NN) models. By virtue of NN architectures, previous approaches consider only direct and total causal effects assuming independence among input variables. We view an NN as a structural causal model (SCM) and extend our focus to include indirect causal effects by introducing feedforward connections among input neurons. We propose an ante-hoc method that captures and maintains direct, indirect, and total causal effects during NN model training. We also propose an algorithm for quantifying learned causal effects in an NN model and efficient approximation strategies for quantifying causal effects in high-dimensional data. Extensive experiments conducted on synthetic and real-world datasets demonstrate that the causal effects learned by our ante-hoc method better approximate the ground truth effects compared to existing methods.
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Submitted 8 January, 2024; v1 submitted 24 March, 2023;
originally announced March 2023.
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Towards Estimating Transferability using Hard Subsets
Authors:
Tarun Ram Menta,
Surgan Jandial,
Akash Patil,
Vimal KB,
Saketh Bachu,
Balaji Krishnamurthy,
Vineeth N. Balasubramanian,
Chirag Agarwal,
Mausoom Sarkar
Abstract:
As transfer learning techniques are increasingly used to transfer knowledge from the source model to the target task, it becomes important to quantify which source models are suitable for a given target task without performing computationally expensive fine tuning. In this work, we propose HASTE (HArd Subset TransfErability), a new strategy to estimate the transferability of a source model to a pa…
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As transfer learning techniques are increasingly used to transfer knowledge from the source model to the target task, it becomes important to quantify which source models are suitable for a given target task without performing computationally expensive fine tuning. In this work, we propose HASTE (HArd Subset TransfErability), a new strategy to estimate the transferability of a source model to a particular target task using only a harder subset of target data. By leveraging the internal and output representations of model, we introduce two techniques, one class agnostic and another class specific, to identify harder subsets and show that HASTE can be used with any existing transferability metric to improve their reliability. We further analyze the relation between HASTE and the optimal average log likelihood as well as negative conditional entropy and empirically validate our theoretical bounds. Our experimental results across multiple source model architectures, target datasets, and transfer learning tasks show that HASTE modified metrics are consistently better or on par with the state of the art transferability metrics.
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Submitted 17 January, 2023;
originally announced January 2023.
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Controllable p-type Do** of 2D WSe2 via Vanadium Substitution
Authors:
Azimkhan Kozhakhmetov,
Samuel Stolz,
Anne Marie Z. Tan,
Rahul Pendurthi,
Saiphaneendra Bachu,
Furkan Turker,
Nasim Alem,
Jessica Kachian,
Saptarshi Das,
Richard G. Hennig,
Oliver Gröning,
Bruno Schuler,
Joshua A. Robinson
Abstract:
Scalable substitutional do** of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to develo** next-generation logic and memory devices based on 2D materials. To date, do** efforts are still nascent. Here, we report scalable growth and vanadium (V) do** of 2D WSe2 at front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible temperatures of 800 °C and 400…
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Scalable substitutional do** of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to develo** next-generation logic and memory devices based on 2D materials. To date, do** efforts are still nascent. Here, we report scalable growth and vanadium (V) do** of 2D WSe2 at front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible temperatures of 800 °C and 400 °C, respectively. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p-type do** via the introduction of discrete defect levels that lie close to the valence band maxima. The p-type nature of the V dopants is further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, our study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic-grade wafer-scale extrinsic 2D semiconductors.
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Submitted 28 July, 2021;
originally announced July 2021.
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Illuminating Invisible Grain Boundaries in Coalesced Single-Orientation WS2 Monolayer Films
Authors:
Danielle Reifsnyder Hickey,
Nadire Nayir,
Mikhail Chubarov,
Tanushree H. Choudhury,
Saiphaneendra Bachu,
Leixin Miao,
Yuanxi Wang,
Chenhao Qian,
Vincent H. Crespi,
Joan M. Redwing,
Adri C. T. van Duin,
Nasim Alem
Abstract:
Engineering atomic-scale defects is crucial for realizing wafer-scale, single-crystalline transition metal dichalcogenide monolayers for electronic devices. However, connecting atomic-scale defects to larger morphologies poses a significant challenge. Using electron microscopy and atomistic simulations, we provide insights into WS2 crystal growth mechanisms, providing a direct link between synthet…
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Engineering atomic-scale defects is crucial for realizing wafer-scale, single-crystalline transition metal dichalcogenide monolayers for electronic devices. However, connecting atomic-scale defects to larger morphologies poses a significant challenge. Using electron microscopy and atomistic simulations, we provide insights into WS2 crystal growth mechanisms, providing a direct link between synthetic conditions and the microstructure. Dark-field TEM imaging of coalesced monolayer WS2 films illuminates defect arrays that atomic-resolution STEM imaging identifies as translational grain boundaries. Imaging reveals the films to have nearly a single orientation with imperfectly stitched domains. Through atomic-resolution imaging and ReaxFF reactive force field-based molecular dynamics simulations, we observe two types of translational mismatch and discuss their atomic structures and origin. Our results indicate that the mismatch results from relatively fast growth rates. Through statistical analysis of >1300 facets, we demonstrate that the macrostructural features are constructed from nanometer-scale building blocks, describing the system across sub-Ångstrom to multi-micrometer length scales.
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Submitted 20 June, 2020;
originally announced June 2020.
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Wafer-scale epitaxial growth of single orientation WS2 monolayers on sapphire
Authors:
Mikhail Chubarov,
Tanushree H. Choudhury,
Danielle Reifsnyder Hickey,
Saiphaneendra Bachu,
Tianyi Zhang,
Amritanand Sebastian,
Anushka Bansa,
Saptarshi Das,
Mauricio Terrones,
Nasim Alem,
Joan M. Redwing
Abstract:
Realization of wafer-scale single-crystal films of transition metal dichalcogenides (TMDs) such as tungsten sulfide requires epitaxial growth and coalescence of oriented domains to form a continuous monolayer. The domains must be oriented in the same crystallographic direction on the substrate to avoid the formation of metallic inversion domain boundaries (IDBs) which are a common feature of layer…
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Realization of wafer-scale single-crystal films of transition metal dichalcogenides (TMDs) such as tungsten sulfide requires epitaxial growth and coalescence of oriented domains to form a continuous monolayer. The domains must be oriented in the same crystallographic direction on the substrate to avoid the formation of metallic inversion domain boundaries (IDBs) which are a common feature of layered chalcogenides. Here we demonstrate fully-coalesced single orientation tungsten sulfide monolayers on 2-inch diameter c-plane sapphire by metalorganic chemical vapor deposition using a multi-step growth process. High growth temperatures and sulfur/metal ratios were required to reduce domain misorientation and achieve epitaxial tungsten sulfide monolayers with low in-plane rotational twist (0.09 deg). Transmission electron microscopy analysis reveals that the tungsten sulfide monolayers lack IDBs but instead have translational boundaries that arise when tungsten sulfide domains with slightly off-set lattices merge together. By adjusting the monolayer growth rate, the density of translational boundaries and bilayer coverage were significantly reduced. The preferred orientation of domains is attributed to the presence of steps on the sapphire surface coupled with growth conditions promote surface diffusion and oriented attachment. The transferred tungsten sulfide monolayers show neutral and charged exciton emission at 80K with negligible defect-related luminescence. Back-gated tungsten sulfide field effect transistors exhibited mobility of 16 cm2/Vs. The results demonstrate the potential of achieving wafer-scale TMD monolayers free of inversion domains with properties approaching that of exfoliated flakes.
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Submitted 19 June, 2020;
originally announced June 2020.