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Hyperfine-to-rotational energy transfer in ultracold atom-molecule collisions
Authors:
Yi-Xiang Liu,
Lingbang Zhu,
Jeshurun Luke,
Mark C. Babin,
Timur V. Tscherbul,
Marcin Gronowski,
Hela Ladjimi,
Michał Tomza,
John L. Bohn,
Kang-Kuen Ni
Abstract:
Energy transfer between different mechanical degrees of freedom in atom-molecule collisions has been widely studied and largely understood. However, systems involving spins remain less explored, especially with a state-to-state precision. Here, we directly observed the energy transfer from atomic hyperfine to molecular rotation in the $^{87}$Rb ($|F_a,M_{F_a}\rangle = |2,2\rangle$) + $^{40}$K…
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Energy transfer between different mechanical degrees of freedom in atom-molecule collisions has been widely studied and largely understood. However, systems involving spins remain less explored, especially with a state-to-state precision. Here, we directly observed the energy transfer from atomic hyperfine to molecular rotation in the $^{87}$Rb ($|F_a,M_{F_a}\rangle = |2,2\rangle$) + $^{40}$K$^{87}$Rb (in the rovibronic ground state $N=0$) $\longrightarrow$ Rb ($ |1,1\rangle$) + KRb ($N=0,1,2$) exothermic collision. We probed the quantum states of the collision products using resonance-enhanced multi-photon ionization followed by time-of-flight mass spectrometry. We also carried out state-of-the-art quantum scattering calculations, which rigorously take into account the coupling between the spin and rotational degrees of freedom at short range, and assume that the KRb monomer can be treated as a rigid rotor moving on a single potential energy surface. The calculated product rotational state distribution deviates from the observations even after extensive tuning of the atom-molecule potential energy surface, suggesting that vibrational degrees of freedom and conical intersections play an important part in ultracold Rb + KRb collisions. Additionally, our ab initio calculations indicate that spin-rotation coupling is dramatically enhanced near a conical intersection, which is energetically accessible at short range. The observations confirm that spin is coupled to mechanical rotation at short range and establish a benchmark for future theoretical studies.
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Submitted 11 July, 2024;
originally announced July 2024.
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Quantum interference and entanglement in ultracold atom-exchange reactions
Authors:
Yi-Xiang Liu,
Lingbang Zhu,
Jeshurun Luke,
J. J. Arfor Houwman,
Mark C. Babin,
Ming-Guang Hu,
Kang-Kuen Ni
Abstract:
Coherent superpositions and entanglement are hallmarks of quantum mechanics, but they are fragile and can easily be perturbed by their environment. Selected isolated physical systems can maintain coherence and generate entanglement using well-controlled interactions. Chemical reactions, where bonds break and form, are highly dynamic quantum processes. A fundamental question is whether coherence ca…
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Coherent superpositions and entanglement are hallmarks of quantum mechanics, but they are fragile and can easily be perturbed by their environment. Selected isolated physical systems can maintain coherence and generate entanglement using well-controlled interactions. Chemical reactions, where bonds break and form, are highly dynamic quantum processes. A fundamental question is whether coherence can be preserved in chemical reactions and then harnessed to generate entangled products. Here we investigate this question by studying the 2KRb $\rightarrow$ K$_2$ + Rb$_2$ reaction at 500 nK, focusing on the the nuclear spin degrees of freedom. We prepare the initial nuclear spins in KRb in an entangled state and characterize the preserved coherence in nuclear spin wavefunction after the reaction. The data are consistent with full coherence at the end of the reaction. This suggests that entanglement can be prepared within the reactants, followed by a chemical reaction that produces separate, entangled molecules. We additionally demonstrate control of the reaction product state distribution by deliberately decohering the reactants.
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Submitted 11 October, 2023;
originally announced October 2023.
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A Quantum Optical Microphone in the Audio Band
Authors:
Raphael Nold,
Charles Babin,
Joel Schmidt,
Tobias Linkewitz,
María T. Pérez Zaballos,
Rainer Stöhr,
Roman Kolesov,
Vadim Vorobyov,
Daniil M. Lukin,
Rüdiger Boppert,
Stefanie Barz,
Jelena Vučković,
Christof M. Gebhardt,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
The ability to perform high-precision optical measurements is paramount to science and engineering. Laser interferometry enables interaction-free sensing with a precision ultimately limited by shot noise. Quantum optical sensors can surpass this limit, but single- or multi-photon schemes are challenged by low experimental sampling rates, while squeezed-light approaches require complex optical setu…
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The ability to perform high-precision optical measurements is paramount to science and engineering. Laser interferometry enables interaction-free sensing with a precision ultimately limited by shot noise. Quantum optical sensors can surpass this limit, but single- or multi-photon schemes are challenged by low experimental sampling rates, while squeezed-light approaches require complex optical setups and sophisticated time gating. Here, we introduce a simple method that infers optical phase shifts through standard intensity measurements while still maintaining the quantum advantage in the measurement precision. Capitalising on the robustness and high sampling rates of our device, we implement a quantum optical microphone in the audio band. Its performance is benchmarked against a classical laser microphone in a standardised medically-approved speech recognition test on 45 subjects. We find that quantum-recorded words improve the speech recognition threshold by $-0.57\, \text{dB}_{\text{SPL}}$, thus making the quantum advantage audible. Not only do these results open the door towards applications in quantum nonlinear interferometry, but they also show that quantum phenomena can be experienced by humans.
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Submitted 27 April, 2022; v1 submitted 26 April, 2022;
originally announced April 2022.
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Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide
Authors:
Naoya Morioka,
Di Liu,
Öney O. Soykal,
Izel Gediz,
Charles Babin,
Rainer Stöhr,
Takeshi Ohshima,
Nguyen Tien Son,
Jawad Ul-Hassan,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integration into nanophotonic resonators. Recently, silicon vacancy centers in silicon carbide have been identified as a promising system with excellent spin and optical properties. Here, we in-depth study the spin-optical dynami…
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Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integration into nanophotonic resonators. Recently, silicon vacancy centers in silicon carbide have been identified as a promising system with excellent spin and optical properties. Here, we in-depth study the spin-optical dynamics of single silicon vacancy center at hexagonal lattice sites, namely V1, in 4H-polytype silicon carbide. By utilizing resonant and above-resonant sub-lifetime pulsed excitation, we determine spin-dependent excited-state lifetimes and intersystem-crossing rates. Our approach to inferring the intersystem-crossing rates is based on all-optical pulsed initialization and readout scheme, and is applicable to spin-active color centers with similar dynamics models. In addition, the optical transition dipole strength and the quantum efficiency of V1 defect are evaluated based on coherent optical Rabi measurement and local-field calibration employing electric-field simulation. The measured rates well explain the results of spin-state polarization dynamics, and we further discuss the altered photoemission dynamics in resonant enhancement structures such as radiative lifetime shortening and Purcell enhancement. By providing a thorough description of V1 center's spin-optical dynamics, our work provides deep understanding of the system which guides implementations of scalable quantum applications based on silicon vacancy centers in silicon carbide.
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Submitted 19 April, 2022; v1 submitted 15 March, 2022;
originally announced March 2022.
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Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
Authors:
Charles Babin,
Rainer Stöhr,
Naoya Morioka,
Tobias Linkewitz,
Timo Steidl,
Raphael Wörnle,
Di Liu,
Erik Hesselmeier,
Vadim Vorobyov,
Andrej Denisenko,
Mario Hentschel,
Christian Gobert,
Patrick Berwian,
Georgy V. Astakhov,
Wolfgang Knolle,
Sridhar Majety,
Pranta Saha,
Marina Radulaski,
Nguyen Tien Son,
Jawad Ul-Hassan,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In par…
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Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution based on cavity quantum electrodynamics.
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Submitted 29 September, 2021; v1 submitted 10 September, 2021;
originally announced September 2021.
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Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
Authors:
Roland Nagy,
Durga Bhaktavatsala Rao Dasari,
Charles Babin,
Di Liu,
Vadim Vorobyov,
Matthias Niethammer,
Matthias Widmann,
Tobias Linkewitz,
Rainer Stöhr,
Heiko B. Weber,
Takeshi Ohshima,
Misagh Ghezellou,
Nguyen Tien Son,
Jawad Ul-Hassan,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing application complexity requires entangling multiple individual systems, e.g. via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical in…
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Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing application complexity requires entangling multiple individual systems, e.g. via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centres in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of $\approx 0.43\,\rm μm^{-3}$. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited linewidth. Moreover, we identify emitters with overlap** emission profiles within diffraction limited excitation spots, for which we introduce simplified schemes for generation of computationally-relevant Greenberger-Horne-Zeilinger (GHZ) and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications.
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Submitted 12 March, 2021; v1 submitted 10 March, 2021;
originally announced March 2021.
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Two-photon phase-sensing with single-photon detection
Authors:
Panagiotis Vergyris,
Charles Babin,
Raphael Nold,
Elie Gouzien,
Harald Herrmann,
Christine Silberhorn,
Olivier Alibart,
Sébastien Tanzilli,
Florian Kaiser
Abstract:
Path-entangled multi-photon states allow optical phase-sensing beyond the shot-noise limit, provided that an efficient parity measurement can be implemented. Realising this experimentally is technologically demanding, as it requires coincident single-photon detection proportional to the number of photons involved, which represents a severe challenge for achieving a practical quantum advantage over…
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Path-entangled multi-photon states allow optical phase-sensing beyond the shot-noise limit, provided that an efficient parity measurement can be implemented. Realising this experimentally is technologically demanding, as it requires coincident single-photon detection proportional to the number of photons involved, which represents a severe challenge for achieving a practical quantum advantage over classical methods. Here, we exploit advanced quantum state engineering based on superposing two photon-pair creation events to realise a new approach that bypasses this issue. In particular, optical phase shifts are probed with a two-photon quantum state whose information is subsequently effectively transferred to a single-photon state. Notably, without any multiphoton detection, we infer phase shifts by measuring the average intensity of the single-photon beam on a photodiode, in analogy to standard classical measurements. Importantly, our approach maintains the quantum advantage: twice as many interference fringes are observed for the same phase shift, corresponding to N=2 path-entangled photons. Our results demonstrate that the advantages of quantum-enhanced phase-sensing can be fully exploited in standard intensity measurements, paving the way towards resource-efficient and practical quantum optical metrology.
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Submitted 6 July, 2020;
originally announced July 2020.
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Spectrally reconfigurable quantum emitters enabled by optimized fast modulation
Authors:
Daniil M. Lukin,
Alexander D. White,
Rahul Trivedi,
Melissa A. Guidry,
Naoya Morioka,
Charles Babin,
Öney O. Soykal,
Jawad Ul Hassan,
Nguyen Tien Son,
Takeshi Ohshima,
Praful K. Vasireddy,
Mamdouh H. Nasr,
Shuo Sun,
Jean-Phillipe W. MacLean,
Constantin Dory,
Emilio A. Nanni,
Jörg Wrachtrup,
Florian Kaiser,
Jelena Vučković
Abstract:
The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose t…
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The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.
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Submitted 27 July, 2020; v1 submitted 27 March, 2020;
originally announced March 2020.
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Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide
Authors:
Péter Udvarhelyi,
Gergő Thiering,
Naoya Morioka,
Charles Babin,
Florian Kaiser,
Daniil Lukin,
Takeshi Ohshima,
Jawad Ul-Hassan,
Nguyen Tien Son,
Jelena Vučković,
Jörg Wrachtrup,
Adam Gali
Abstract:
Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H SiC. We apply density functional theory beyond the Born-Oppenheimer approximation to describe the t…
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Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H SiC. We apply density functional theory beyond the Born-Oppenheimer approximation to describe the temperature dependent mixing of electronic excited states assisted by phonons. We obtain polaronic gap around 5 and 22~meV for V1 and V2 centers, respectively, that results in significant difference in the temperature dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. We also compute how crystal deformations affect the zero-phonon-line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects.
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Submitted 18 April, 2020; v1 submitted 8 January, 2020;
originally announced January 2020.
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Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
Authors:
Naoya Morioka,
Charles Babin,
Roland Nagy,
Izel Gediz,
Erik Hesselmeier,
Di Liu,
Matthew Joliffe,
Matthias Niethammer,
Durga Dasari,
Vadim Vorobyov,
Roman Kolesov,
Rainer Stöhr,
Jawad Ul-Hassan,
Nguyen Tien Son,
Takeshi Ohshima,
Péter Udvarhelyi,
Gergő Thiering,
Adam Gali,
Jörg Wrachtrup,
Florian Kaiser
Abstract:
Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable…
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Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting photons from the ultra-stable zero-phonon line optical transitions, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the system's intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the system's spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on recently demonstrated coupled individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification.
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Submitted 10 January, 2020; v1 submitted 8 January, 2020;
originally announced January 2020.
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Laser writing of scalable single colour centre in silicon carbide
Authors:
Yu-Chen Chen,
Patrick S. Salter,
Matthias Niethammer,
Matthias Widmann,
Florian Kaiser,
Roland Nagy,
Naoya Morioka,
Charles Babin,
J ürgen Erlekampf,
Patrick Berwian,
Martin Booth,
J örg Wrachtrup
Abstract:
Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems. However, to achieve scalable devices it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy ($V_{Si}$) centres in 4H-SiC using laser writing without any post-annealing process. Due to the aberration correc…
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Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems. However, to achieve scalable devices it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy ($V_{Si}$) centres in 4H-SiC using laser writing without any post-annealing process. Due to the aberration correction in the writing apparatus and the non-annealing process, we generate single $V_{Si}$ centres with yields up to 30%, located within about 80 nm of the desired position in the transverse plane. We also investigated the photophysics of the laser writing $V_{Si}$ centres and conclude that there are about 16 photons involved in the laser writing $V_{Si}$ centres process. Our results represent a powerful tool in fabrication of single $V_{Si}$ centres in SiC for quantum technologies and provide further insights into laser writing defects in dielectric materials.
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Submitted 11 December, 2018;
originally announced December 2018.
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Quantum enhancement of accuracy and precision in optical interferometry
Authors:
Florian Kaiser,
Panagiotis Vergyris,
Djeylan Aktas,
Charles Babin,
Laurent Labonté,
Sébastien Tanzilli
Abstract:
White-light interferometry is one of today's most precise tools for determining optical material properties. Achievable precision and accuracy are typically limited by systematic errors due to a high number of interdependent data fitting parameters. Here, we introduce spectrally-resolved quantum white-light interferometry as a novel tool for optical property measurements, notably chromatic dispers…
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White-light interferometry is one of today's most precise tools for determining optical material properties. Achievable precision and accuracy are typically limited by systematic errors due to a high number of interdependent data fitting parameters. Here, we introduce spectrally-resolved quantum white-light interferometry as a novel tool for optical property measurements, notably chromatic dispersion in optical fibres. By exploiting both spectral and photon-number correlations of energy-time entangled photon pairs, the number of fitting parameters is significantly reduced which eliminates systematic errors and leads to an absolute determination of the material parameter. By comparing the quantum method to state-of-the-art approaches, we demonstrate the quantum advantage through 2.4 times better measurement precision, despite involving 62 times less photons. The improved results are due to conceptual advantages enabled by quantum optics which are likely to define new standards in experimental methods for characterising optical materials.
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Submitted 15 September, 2017; v1 submitted 6 January, 2017;
originally announced January 2017.
