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Twisted MoSe2 Homobilayer Behaving as a Heterobilayer
Authors:
Arka Karmakar,
Abdullah Al-Mahboob,
Natalia Zawadzka,
Mateusz Raczyński,
Weiguang Yang,
Mehdi Arfaoui,
Gayatri,
Julia Kucharek,
Jerzy T. Sadowski,
Hyeon Suk Shin,
Adam Babiński,
Wojciech Pacuski,
Tomasz Kazimierczuk,
Maciej R Molas
Abstract:
Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a tw…
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Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a twisted molybdenum diselenide (MoSe2) homobilayer without any charge-blocking interlayer. We fabricated an unconventional homobilayer (i.e., HS) with a large twist angle by combining the chemical vapor deposition (CVD) and mechanical exfoliation (Exf.) techniques to fully exploit the lattice parameters mismatch and indirect/direct (CVD/Exf.) bandgap nature. This effectively weaken the charge transfer (CT) process and allows the ET process to take over the carrier recombination channels. We utilize a series of optical and electron spectroscopy techniques complementing by the density functional theory calculations, to describe a massive photoluminescence enhancement from the HS area due to an efficient ET process. Our results show that the electronically decoupled MoSe2 homobilayer is coupled by the ET process, mimicking a 'true' heterobilayer nature.
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Submitted 7 June, 2024; v1 submitted 23 April, 2024;
originally announced April 2024.
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Pressure-induced optical anisotropy of HfS$_2$
Authors:
Igor Antoniazzi,
Tomasz Woźniak,
Amit Pawbake,
Natalia Zawadzka,
Magdalena Grzeszczyk,
Zahir Muhammad,
Weisheng Zhao,
Jordi Ibáñez,
Clement Faugeras,
Maciej R. Molas,
Adam Babiński
Abstract:
The effect of pressure on Raman scattering (RS) in the bulk HfS$_2$ is investigated under hydrostatic and non-hydrostatic conditions. The RS lineshape does not change significantly in the hydrostatic regime, showing a systematic blueshift of the spectral features. In a non-hydrostatic environment, seven peaks emerge in the spectrum ($P$=7 GPa) dominating the lineshape up to $P$=10.5 GPa. The chang…
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The effect of pressure on Raman scattering (RS) in the bulk HfS$_2$ is investigated under hydrostatic and non-hydrostatic conditions. The RS lineshape does not change significantly in the hydrostatic regime, showing a systematic blueshift of the spectral features. In a non-hydrostatic environment, seven peaks emerge in the spectrum ($P$=7 GPa) dominating the lineshape up to $P$=10.5 GPa. The change in the RS lineshape manifests a pressure-induced phase transition in HfS$_2$. The simultaneous observation of both low-pressure (LP) and high-pressure (HP) related RS peaks suggests the corresponding coexistence of two different phases over a large pressure range. We found that the HP-related phase is metastable, persisting during the decompression cycle down to $P$=1.2 GPa with the LP-related features finally recovering at even lower pressures. The angle-resolved polarized RS (ARPRS) performed under $P$=7.4 GPa revealed a strong in-plane anisotropy of both the LP-related A$_{1g}$ mode and the HP peaks. The anisotropy is related to the possible distortion of the structure induced by the non-hydrostatic component of the pressure. We describe the obtained results by the influence of the non-hydrostatic pressure on the observed phase transition. We interpret our results in terms of a distorted $Pnma$ phase as a possible HP induced structure of HfS$_2$.
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Submitted 29 February, 2024;
originally announced February 2024.
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Resonant Raman Scattering of Few Layers CrBr$_3$
Authors:
Łucja Kipczak,
Arka Karmakar,
Magdalena Grzeszczyk,
Róża Janiszewska,
Tomasz Woźniak,
Zhaolong Chen,
Jan Pawłowski,
Kenji Watanabe,
Takashi Taniguchi,
Adam Babiński,
Maciej Koperski,
Maciej R. Molas
Abstract:
We investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr$_3$) with a thickness ranging from three to twenty layers (3~L to 20~L) revealed by the Raman scattering (RS) technique. Systematic dependence of the RS process efficiency on the energy of the laser excitation is explored for four different excitation energies: 1.96 eV, 2.21 eV, 2.41 eV, and 3.06 eV.…
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We investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr$_3$) with a thickness ranging from three to twenty layers (3~L to 20~L) revealed by the Raman scattering (RS) technique. Systematic dependence of the RS process efficiency on the energy of the laser excitation is explored for four different excitation energies: 1.96 eV, 2.21 eV, 2.41 eV, and 3.06 eV. Our characterization demonstrates that for 12 L CrBr$_3$, 3.06~eV excitation could be considered resonant with interband electronic transitions due to the enhanced intensity of the Raman-active scattering resonances and the qualitative change in the Raman spectra. Polarization-resolved RS measurements for 12 L CrBr$_3$ and first-principles calculations allow us to identify five observable phonon modes characterized by distinct symmetries, classified as the A$_\textrm{g}$ and E$_\textrm{g}$ modes. The evolution of phonon modes with temperature for a 20 L CrBr$_3$ encapsulated in hexagonal boron nitride flakes demonstrates alterations of phonon energies and/or linewidths of resonances indicative of a transition between the paramagnetic and ferromagnetic state at Curie temperature ($T_\textrm{C} \approx 50$ K). The exploration of the effects of thickness on the phonon energies demonstrated small variations pronounces exclusively for the thinnest layers in the vicinity of 3 - 5 L. This observation is attributed to strong localization in the real space of interband electronic excitations, limiting the effects of confinement for resonantly excited Raman modes to atomically thin layers.
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Submitted 20 December, 2023;
originally announced December 2023.
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Localisation-to-delocalisation transition of moiré excitons in WSe$_2$/MoSe$_2$ heterostructures
Authors:
Elena Blundo,
Federico Tuzi,
Salvatore Cianci,
Marzia Cuccu,
Katarzyna Olkowska-Pucko,
Łucja Kipczak,
Giorgio Contestabile,
Antonio Miriametro,
Marco Felici,
Giorgio Pettinari,
Takashi Taniguchi,
Kenji Watanabe,
Adam Babiński,
Maciej R. Molas,
Antonio Polimeni
Abstract:
Moiré excitons (MXs) are electron-hole pairs localised by the periodic (moiré) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, $e.g.$, for creating nanoscale-ordered quantum emitters and achieving or probing strongly correlated electronic phases at relatively high temperatures. Here, we studied the exciton properties of a WSe$_2$/MoSe$_2$ HS from $T$=6 K to room…
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Moiré excitons (MXs) are electron-hole pairs localised by the periodic (moiré) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, $e.g.$, for creating nanoscale-ordered quantum emitters and achieving or probing strongly correlated electronic phases at relatively high temperatures. Here, we studied the exciton properties of a WSe$_2$/MoSe$_2$ HS from $T$=6 K to room temperature using time-resolved and continuous-wave micro-photoluminescence, also under magnetic field. The exciton dynamics and emission lineshape evolution with temperature show clear signatures that MXs de-trap from the moiré potential and turn into free interlayer excitons (IXs) at $T\gtrsim$120 K. The MX-to-IX transition is also apparent from the exciton magnetic moment reversing its sign when the moiré potential is not capable to localise excitons at elevated temperatures. Concomitantly, the exciton formation and decay times reduce drastically. Thus, our findings establish the conditions for a truly confined nature of the exciton states in a moiré superlattice with increasing temperature.
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Submitted 26 October, 2023;
originally announced October 2023.
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Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides
Authors:
M. Zinkiewicz,
M. Grzeszczyk,
T. Kazimierczuk,
M. Bartos,
K. Nogajewski,
W. Pacuski,
K. Watanabe,
T. Taniguchi,
A. Wysmołek,
P. Kossacki,
M. Potemski,
A. Babiński,
M. R. Molas
Abstract:
Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by swee** the excitation energy when the detection energy is fixed. We study the low-temperature ($T$=5~K) RSE spectra measured on four high quality monolayers (ML) of semiconducting transition metal dichalcogenides (S-TMDs), $i.e.$ MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, encapsulated in hexagonal BN.…
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Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by swee** the excitation energy when the detection energy is fixed. We study the low-temperature ($T$=5~K) RSE spectra measured on four high quality monolayers (ML) of semiconducting transition metal dichalcogenides (S-TMDs), $i.e.$ MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, encapsulated in hexagonal BN. The outgoing resonant conditions of Raman scattering reveal an extraordinary intensity enhancement of the phonon modes, which results in extremely rich RSE spectra. The obtained spectra are composed not only of Raman-active peaks, $i.e.$ in-plane E$'$ and out-of-plane A$'_1$, but the appearance of 1$^{st}$, 2$^{nd}$, and higher-order phonon modes is recognised. The intensity profiles of the A$'_1$ modes in the investigated MLs resemble the emissions due to neutral excitons measured in the corresponding PL spectra for the outgoing type of resonant Raman scattering conditions. Furthermore, for the WSe$_2$ ML, the A$'_1$ mode was observed when the incoming light was in resonance with the neutral exciton line. The strength of the exciton-phonon coupling (EPC) in S-TMD MLs strongly depends on the type of their ground excitonic state, $i.e.$ bright or dark, resulting in different shapes of the RSE spectra. Our results demonstrate that RSE spectroscopy is a powerful technique for studying EPC in S-TMD MLs.
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Submitted 16 August, 2023;
originally announced August 2023.
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Optical properties of orthorhombic germanium sulfide: Unveiling the Anisotropic Nature of Wannier Exciton
Authors:
Mehdi Arfaoui,
Natalia Zawadzka,
Sabrine Ayari,
Zhaolong Chen,
Kenji Watanabe,
Takashi Taniguchi,
Adam Babiński,
Maciej Koperski,
Sihem Jaziri,
Maciej R. Molas
Abstract:
To fully explore exciton-based applications and improve their performance, it is essential to understand the exciton behavior in anisotropic materials. Here, we investigate the optical properties of anisotropic excitons in GeS encapsulated by h-BN, using different approaches that combine polarization- and temperature-dependent photoluminescence (PL) measurements, \textit{ab initio} calculations, a…
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To fully explore exciton-based applications and improve their performance, it is essential to understand the exciton behavior in anisotropic materials. Here, we investigate the optical properties of anisotropic excitons in GeS encapsulated by h-BN, using different approaches that combine polarization- and temperature-dependent photoluminescence (PL) measurements, \textit{ab initio} calculations, and effective mass approximation (EMA). Using the Bethe-Salpeter Equation (BSE) method, we found that the optical absorption spectra in GeS are significantly affected by the Coulomb interaction included in the BSE method, which shows the importance of excitonic effects besides it exhibits a significant dependence on the direction of polarization, revealing the anisotropic nature of bulk GeS. Combining \textit{ab initio} calculations and EMA methods, we investigate the quasi-hydrogenic exciton states and oscillator strength (OS) of GeS along the zigzag and armchair axes. We found that the anisotropy induces lifting of the degeneracy and mixing of the excitonic states in GeS, which results in highly nonhydrogenic features. Very good agreement with the experiment is observed.
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Submitted 29 April, 2023;
originally announced May 2023.
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Multidimensional sensing of proximity magnetic fields via intrinsic activation of dark excitons in WSe$_2$/CrCl$_3$ heterostructure
Authors:
Łucja Kipczak,
Zhaolong Chen,
Pengru Huang,
Kristina Vaklinova,
Kenji Watanabe,
Takashi Taniguchi,
Adam Babiński,
Maciej Koperski,
Maciej R. Molas
Abstract:
Quantum phenomena at interfaces create functionalities at the level of materials. Ferromagnetism in van der Waals systems with diverse arrangements of spins opened a pathway for utilizing proximity magnetic fields to activate properties of materials which would otherwise require external stimuli. Herewith, we realize this notion via creating heterostructures comprising bulk CrCl$_3$ ferromagnet wi…
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Quantum phenomena at interfaces create functionalities at the level of materials. Ferromagnetism in van der Waals systems with diverse arrangements of spins opened a pathway for utilizing proximity magnetic fields to activate properties of materials which would otherwise require external stimuli. Herewith, we realize this notion via creating heterostructures comprising bulk CrCl$_3$ ferromagnet with in-plane easy-axis magnetization and monolayer WSe$_2$ semiconductor. We demonstrate that the in-plane component of the proximity field activates the dark excitons within WSe$_2$. Zero-external-field emission from the dark states allowed us to establish the in-plane and out-of-plane components of the proximity field via inspection of the emission intensity and Zeeman effect, yielding canted orientations at the degree range of $10^{\circ}$ $-$ $30^{\circ}$ at different locations of the heterostructures, attributed to the features of interfacial topography. Our findings are relevant for the development of spintronics and valleytronics with long-lived dark states in technological timescales and sensing applications of local magnetic fields realized simultaneously in multiple dimensions.
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Submitted 24 April, 2023;
originally announced April 2023.
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Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material
Authors:
Arka Karmakar,
Tomasz Kazimierczuk,
Igor Antoniazzi,
Mateusz Raczyński,
Suji Park,
Houk Jang,
Takashi Taniguchi,
Kenji Watanabe,
Adam Babiński,
Abdullah Al-Mahboob,
Maciej R. Molas
Abstract:
High light absorption (~15%) and strong photoluminescence (PL) emission in monolayer (1L) transition metal dichalcogenide (TMD) make it an ideal candidate for optoelectronic applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). In TMDs, long-distance ET can survive up to several tens of nm, unli…
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High light absorption (~15%) and strong photoluminescence (PL) emission in monolayer (1L) transition metal dichalcogenide (TMD) make it an ideal candidate for optoelectronic applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). In TMDs, long-distance ET can survive up to several tens of nm, unlike the CT process. Our experiment shows that an efficient ET occurs from the 1Ls WSe2-to-MoS2 with an interlayer hBN, due to the resonant overlap** of the high-lying excitonic states between the two TMDs, resulting in enhanced HS MoS2 PL emission. This type of unconventional ET from the lower-to-higher optical bandgap material is not typical in the TMD HSs. With increasing temperature, the ET process becomes weaker due to the increased electron-phonon scattering, destroying the enhanced MoS2 emission. Our work provides new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways.
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Submitted 23 March, 2023; v1 submitted 13 January, 2023;
originally announced January 2023.
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The effect of temperature and excitation energy on Raman scattering in bulk HfS$_2$
Authors:
Igor Antoniazzi,
Natalia Zawadzka,
Magdalena Grzeszczyk,
Tomasz Woźniak,
Jordi Ibáñez,
Zahir Muhammad,
Weisheng Zhao,
Maciej R. Molas,
Adam Babiński
Abstract:
Raman scattering (RS) in bulk hafnium disulfide (HfS$_2$) is investigated as a function of temperature (5 K $-$ 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the main Raman-active (A$_{\textrm{1g}}$ and E$_{\textrm{g}}$) modes with the temperature-induced blueshift in the low-temperature limit is observed. The…
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Raman scattering (RS) in bulk hafnium disulfide (HfS$_2$) is investigated as a function of temperature (5 K $-$ 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the main Raman-active (A$_{\textrm{1g}}$ and E$_{\textrm{g}}$) modes with the temperature-induced blueshift in the low-temperature limit is observed. The low-temperature quenching of a mode $ω_1$ (134 cm$^{-1}$) and the emergence of a new mode at approx. 184 cm$^{-1}$, labeled Z, is reported. The optical anisotropy of the RS in HfS$_2$ is also reported, which is highly susceptible to the excitation energy. The apparent quenching of the A$_{\textrm{1g}}$ mode at $T$=5 K and of the E$_{\textrm{g}}$ mode at $T$=300 K in the RS spectrum excited with 3.06~eV excitation is also observed. We discuss the results in the context of possible resonant character of light-phonon interactions. Analyzed is also a possible effect of the iodine molecules intercalated in the van der Waals gaps between neighboring HfS$_2$ layers, which inevitably result from the growth procedure.
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Submitted 12 December, 2022;
originally announced December 2022.
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Analogy and dissimilarity of excitons in monolayer and bilayer of MoSe$_2$
Authors:
Łucja Kipczak,
Artur O. Slobodeniuk,
Tomasz Woźniak,
Mukul Bhatnagar,
Natalia Zawadzka,
Katarzyna Olkowska-Pucko,
Magdalena Grzeszczyk,
Kenji Watanabe,
Takashi Taniguchi,
Adam Babiński,
Maciej R. Molas
Abstract:
Excitons in thin layers of semiconducting transition metal dichalcogenides are highly subject to the strongly modified Coulomb electron-hole interaction in these materials. Therefore, they do not follow the model system of a two-dimensional hydrogen atom. We investigate experimentally and theoretically excitonic properties in both the monolayer (ML) and the bilayer (BL) of MoSe$_2$ encapsulated in…
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Excitons in thin layers of semiconducting transition metal dichalcogenides are highly subject to the strongly modified Coulomb electron-hole interaction in these materials. Therefore, they do not follow the model system of a two-dimensional hydrogen atom. We investigate experimentally and theoretically excitonic properties in both the monolayer (ML) and the bilayer (BL) of MoSe$_2$ encapsulated in hexagonal BN. The measured magnetic field evolutions of the reflectance contrast spectra of the MoSe$_2$ ML and BL allow us to determine $g$-factors of intralayer A and B excitons, as well as the $g$-factor of the interlayer exciton. We explain the dependence of $g$-factors on the number of layers and excitation state using first principles calculations. Furthermore, we demonstrate that the experimentally measured ladder of excitonic $s$ states in the ML can be reproduced using the $\mathbf{k\cdot p}$ approach with the Rytova-Keldysh potential that describes the electron-hole interaction. In contrast, the analogous calculation for the BL case requires taking into account the out-of-plane dielectric response of the MoSe$_2$ BL.
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Submitted 16 January, 2023; v1 submitted 29 November, 2022;
originally announced November 2022.
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Excitons and trions in WSSe monolayers
Authors:
Katarzyna Olkowska-Pucko,
Elena Blundo,
Natalia Zawadzka,
Salvatore Cianci,
Diana Vaclavkova,
Piotr Kapuściński,
Dipankar Jana,
Giorgio Pettinari,
Marco Felici,
Karol Nogajewski,
Miroslav Bartos,
Kenji Watanabe,
Takashi Taniguchi,
Clement Faugeras,
Marek Potemski,
Adam Babiński,
Antonio Polimeni,
Maciej R. Molas
Abstract:
The possibility of almost linear tuning of the band gap and of the electrical and optical properties in monolayers (MLs) of semiconducting transition metal dichalcogenide (S-TMD) alloys opens up the way to fabricate materials with on-demand characteristics. By making use of photoluminescence spectroscopy, we investigate optical properties of WSSe MLs with a S/Se ratio of 57/43 deposited on SiO…
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The possibility of almost linear tuning of the band gap and of the electrical and optical properties in monolayers (MLs) of semiconducting transition metal dichalcogenide (S-TMD) alloys opens up the way to fabricate materials with on-demand characteristics. By making use of photoluminescence spectroscopy, we investigate optical properties of WSSe MLs with a S/Se ratio of 57/43 deposited on SiO$_2$/Si substrate and encapsulated in hexagonal BN flakes. Similarly to the $"parent"$ WS$_2$ and WSe$_2$ MLs, we assign the WSSe MLs to the ML family with the dark ground exciton state. We find that, in addition to the neutral bright A exciton line, three observed emission lines are associated with negatively charged excitons. The application of in-plane and out-of-plane magnetic fields allows us to assign undeniably the bright and dark (spin- and momentum-forbidden) negative trions as well as the phonon replica of the dark spin-forbidden complex. Furthermore, the existence of the single photon emitters in the WSSe ML is also demonstrated, thus prompting the opportunity to enlarge the wavelength range for potential future quantum applications of S-TMDs.
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Submitted 29 November, 2022; v1 submitted 21 September, 2022;
originally announced September 2022.
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Excitonic luminescence of iodine-intercalated HfS$_2$
Authors:
N. Zawadzka,
T. Woźniak,
M. Strawski,
I. Antoniazzi,
M. Grzeszczyk,
K. Olkowska-Pucko,
Z. Muhammad,
J. Ibanez,
W. Zhao,
J. Jadczak,
R. Stępniewski,
A. Babiński,
M. R. Molas
Abstract:
Photoluminescence from bulk HfS$_2$ grown by the chemical vapor transport method is reported. A series of emission lines is apparent at low temperature in the energy range of 1.4 - 1.5 eV. Two groups of the observed excitonic transitions followed by their replicas involving acoustic and optical phonons are distinguished using classical intensity correlation analysis. The emission is attributed to…
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Photoluminescence from bulk HfS$_2$ grown by the chemical vapor transport method is reported. A series of emission lines is apparent at low temperature in the energy range of 1.4 - 1.5 eV. Two groups of the observed excitonic transitions followed by their replicas involving acoustic and optical phonons are distinguished using classical intensity correlation analysis. The emission is attributed to the recombination of excitons bound to iodine (I$_2$) molecules intercalated between layers of HfS$_2$. The I$_2$ molecules are introduced to the crystal during the growth as halogen transport agents in the growth process. Their presence in the crystal is confirmed by secondary ion mass spectroscopy.
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Submitted 16 January, 2023; v1 submitted 18 September, 2022;
originally announced September 2022.
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Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS$_{2}$
Authors:
Mukul Bhatnagar,
Tomasz Woźniak,
Łucja Kipczak,
Natalia Zawadzka,
Katarzyna Olkowska-Pucko,
Magdalena Grzeszczyk,
Kenji Watanabe,
Takashi Taniguchi,
Adam Babiński,
Maciej R. Molas
Abstract:
The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS$_{2}$ encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV, close to the A excitonic resonance, shows rich and distinct vibrational features that are otherwise not observed in non-resonant scattering. The appearance of…
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The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS$_{2}$ encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV, close to the A excitonic resonance, shows rich and distinct vibrational features that are otherwise not observed in non-resonant scattering. The appearance of 1$^{st}$ and 2$^{nd}$ order phonon modes is unambiguously observed in a broad range of temperatures from 5 K to 320 K. The spectrum includes the Raman-active modes, $i.e.$ E$_\textrm{1g}^{2}$($Γ$) and A$_\textrm{1g}$($Γ$) along with their Davydov-split counterparts, $i.e.$ E$_\textrm{1u}$($Γ$) and B$_\textrm{1u}$($Γ$). The temperature evolution of the Raman scattering spectrum brings forward key observations, as the integrated intensity profiles of different phonon modes show diverse trends. The Raman-active A$_{1g}$($Γ$) mode, which dominates the Raman scattering spectrum at $T$=5~K quenches with increasing temperature. Surprisingly, at room temperature the B$_\textrm{1u}$($Γ$) mode, which is infrared-active in the bilayer, is substantially stronger than its nominally Raman-active A$_\textrm{1g}$($Γ$) counterpart.
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Submitted 18 September, 2022; v1 submitted 19 April, 2022;
originally announced April 2022.
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The effect of dielectric environment on the brightening of neutral and charged dark excitons in WSe$_2$ monolayer
Authors:
Małgorzata Zinkiewicz,
Magdalena Grzeszczyk,
Łucja Kipczak,
Tomasz Kazimierczuk,
Kenji Watanabe,
Takashi Taniguchi,
Piotr Kossacki,
Adam Babiński,
Maciej R. Molas
Abstract:
The dielectric environment of atomically-thin monolayer (ML) of semiconducting transition metal dichalcogenides affects both the electronic band gap and the excitonic binding energy in the ML. We investigate the effect of the environment on the in-plane magnetic field brightening of neutral and charged dark exciton emissions in the WSe$_2$ ML. The monolayers placed in three dielectric environments…
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The dielectric environment of atomically-thin monolayer (ML) of semiconducting transition metal dichalcogenides affects both the electronic band gap and the excitonic binding energy in the ML. We investigate the effect of the environment on the in-plane magnetic field brightening of neutral and charged dark exciton emissions in the WSe$_2$ ML. The monolayers placed in three dielectric environments are studied, in particular, the ML encapsulated in hexagonal BN (hBN) flakes, the ML deposited on a hBN layer, and the ML embedded between the hBN flake and SiO$_2$/Si substrate. We observe that the brightening rates of the neutral and charged dark excitons depend on the dielectric environment, which may be related to the variation of the level of carrier concentration in the ML. Moreover, the surrounding media, characterized by different dielectric constants, influences weakly the relative energies of the neutral and charged dark excitons in reference to the bright ones.
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Submitted 10 April, 2022; v1 submitted 20 January, 2022;
originally announced January 2022.
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Anisotropic Optical And Vibrational Properties Of GeS
Authors:
Natalia Zawadzka,
Łucja Kipczak,
Tomasz Woźniak,
Katarzyna Olkowska-Pucko,
Magdalena Grzeszczyk,
Adam Babiński,
Maciej R. Molas
Abstract:
The optical response of bulk germanium sulfide (GeS) is investigated systematically using different polarization-resolved experimental techniques, such as photoluminescence (PL), reflectance contrast (RC), and Raman scattering (RS). It is shown that while the low-temperature ($T$=5 K) optical band-gap absorption is governed by a single resonance related to the neutral exciton, the corresponding em…
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The optical response of bulk germanium sulfide (GeS) is investigated systematically using different polarization-resolved experimental techniques, such as photoluminescence (PL), reflectance contrast (RC), and Raman scattering (RS). It is shown that while the low-temperature ($T$=5 K) optical band-gap absorption is governed by a single resonance related to the neutral exciton, the corresponding emission is dominated by the disorder/impurity- and/or phonon-assisted recombination processes. Both the RC and PL spectra are found to be linearly polarized along the armchair direction. The low and room ($T$=300 K) temperature RS spectra consist of six Raman peaks identified with the help of Density Fuctional Theory (DFT) calculations: A$^1_{\textrm{g}}$, A$^2_{\textrm{g}}$, A$^3_{\textrm{g}}$, A$^4_{\textrm{g}}$, B$^1_{\textrm{1g}}$, and B$^2_{\textrm{1g}}$, which polarization properties are studied under four different excitation energies. We found that the polarization orientations of the A$^2_{\textrm{g}}$ and A$^4_{\textrm{g}}$ modes under specific excitation energy can be useful tools to determine the GeS crystallographic directions: armchair and zigzag.
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Submitted 29 October, 2021; v1 submitted 28 October, 2021;
originally announced October 2021.
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Pressure-driven phase transitions in bulk HfS$_2$
Authors:
M. Grzeszczyk,
J. Gawraczyński,
T. Woźniak,
J. Ibáñez,
Z. Muhammad,
W. Zhao,
M. R. Molas,
A. Babiński
Abstract:
The effect of hydrostatic pressure up to 27 GPa on the Raman scattering (RS) in bulk HfS$_2$ is investigated. There are two transformations of RS spectra, which take place during compression at pressure between 5.7 GPa and 9.8 GPa as well as between 12.8 GPa and 15.2 GPa. Seven vibrational modes can be observed after the transformation, as compared to four modes before the transformation. The obse…
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The effect of hydrostatic pressure up to 27 GPa on the Raman scattering (RS) in bulk HfS$_2$ is investigated. There are two transformations of RS spectra, which take place during compression at pressure between 5.7 GPa and 9.8 GPa as well as between 12.8 GPa and 15.2 GPa. Seven vibrational modes can be observed after the transformation, as compared to four modes before the transformation. The observed change suggests structural change in the material of yet unknown nature. The frequencies of the RS modes observed above the transformation change linearly with pressure and corresponding pressure coefficients have been determined. The other transition manifests itself as a change in the RS lineshape. While a series of well-defined RS modes are observed under pressure below the transition, broad spectral bands can be seen at higher pressure. The overall lineshape of the spectra resembles that of disordered materials. The lineshape does not change during decompression, which suggests permanent nature of the high-pressure transition.
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Submitted 21 October, 2021;
originally announced October 2021.
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The optical response of artificially twisted MoS$_2$ bilayers
Authors:
M. Grzeszczyk,
J. Szpakowski,
A. O. Slobodeniuk,
T. Kazimierczuk,
M. Bhatnagar,
T. Taniguchi,
K. Watanabe,
P. Kossacki,
M. Potemski,
A. Babiński,
M. R. Molas
Abstract:
Two-dimensional layered materials offer the possibility to create artificial vertically stacked structures possessing an additional degree of freedom - $the$ $interlayer$ $twist$. We present a comprehensive optical study of artificially stacked bilayers (BLs) MoS$_2$ encapsulated in hexagonal BN with interlayer twist angle ranging from 0 to 60 degrees using Raman scattering and photoluminescence s…
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Two-dimensional layered materials offer the possibility to create artificial vertically stacked structures possessing an additional degree of freedom - $the$ $interlayer$ $twist$. We present a comprehensive optical study of artificially stacked bilayers (BLs) MoS$_2$ encapsulated in hexagonal BN with interlayer twist angle ranging from 0 to 60 degrees using Raman scattering and photoluminescence spectroscopies. It is found that the strength of the interlayer coupling in the studied BLs can be estimated using the energy dependence of indirect emission versus the A$_\textrm{1g}$-E$_\textrm{2g}^1$ energy separation. Due to the hybridization of electronic states in the valence band, the emission line related to the interlayer exciton is apparent in both the natural (2H) and artificial (62$^\circ$) MoS$_2$ BLs, while it is absent in the structures with other twist angles. The interlayer coupling energy is estimated to be of about 50 meV. The effect of temperature on energies and intensities of the direct and indirect emission lines in MoS$_2$ bilayers is also quantified.
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Submitted 25 May, 2021;
originally announced May 2021.
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Excitonic complexes in $n$-doped WS$_2$ monolayer
Authors:
M. Zinkiewicz,
T. Woźniak,
T. Kazimierczuk,
P. Kapuściński,
K. Oreszczuk,
M. Grzeszczyk,
M. Bartos,
K. Nogajewski,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
P. Kossacki,
M. Potemski,
A. Babiński,
M. R. Molas
Abstract:
We investigate the origin of emission lines apparent in the low-temperature photoluminescence spectra of $n$-doped WS$_2$ monolayer embedded in hexagonal BN layers using external magnetic fields and first-principles calculations. Apart from the neutral A exciton line, all observed emission lines are related to the negatively charged excitons. Consequently, we identify emissions due to both the bri…
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We investigate the origin of emission lines apparent in the low-temperature photoluminescence spectra of $n$-doped WS$_2$ monolayer embedded in hexagonal BN layers using external magnetic fields and first-principles calculations. Apart from the neutral A exciton line, all observed emission lines are related to the negatively charged excitons. Consequently, we identify emissions due to both the bright (singlet and triplet) and dark (spin- and momentum-forbidden) negative trions as well as the phonon replicas of the latter optically-inactive complexes. The semi-dark trions and negative biexcitons are distinguished. Based on their experimentally extracted and theoretically calculated $g$-factors, we identify three distinct families of emissions due to exciton complexes in WS$_2$: bright, intravalley and intervalley dark. The $g$-factors of the spin-split subbands in both the conduction and valence bands are also determined.
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Submitted 21 December, 2020;
originally announced December 2020.
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Exposing the trion's fine structure by controlling the carrier concentration in hBN-encapsulated MoS$_2$
Authors:
Magdalena Grzeszczyk,
Katarzyna Olkowska-Pucko,
Kenji Watanabe,
Takashi Taniguchi,
Piotr Kossacki,
Adam Babiński,
Maciej R. Molas
Abstract:
Atomically thin materials, like semiconducting transition metal dichalcogenides, are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. In this work, high-quality van der Waals heterostructures assembled from hBN-encapsulated monolayer MoS$_2$ are studied with the aid of photoluminescence, photoluminescence excit…
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Atomically thin materials, like semiconducting transition metal dichalcogenides, are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. In this work, high-quality van der Waals heterostructures assembled from hBN-encapsulated monolayer MoS$_2$ are studied with the aid of photoluminescence, photoluminescence excitation, and reflectance contrast experiments. We demonstrate that carrier concentration in MoS$_2$ monolayers, arising from charge transfer from impurities in the substrate, can be significantly tuned within one order of magnitude by the modification of the bottom hBN flake thickness. The studied structures, characterized by spectral lines approaching the narrow homogeneously broadened limit enabled observations of subtle optical and spin-valley properties of excitonic complexes. Our results allowed us to resolve three optically-active negatively charged excitons in MoS$_2$ monolayers, which are assigned to the intravalley singlet, intervalley singlet, and intervalley triplet states.
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Submitted 1 June, 2021; v1 submitted 8 December, 2020;
originally announced December 2020.
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Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
Authors:
M. Osiekowicz,
D. Staszczuk,
K. Olkowska-Pucko,
Ł. Kipczak,
M. Grzeszczyk,
M. Zinkiewicz,
K. Nogajewski,
Z. R. Kudrynskyi,
Z. D. Kovalyuk,
A. Patané,
A. Babiński,
M. R. Molas
Abstract:
The temperature effect on the Raman scattering efficiency is investigated in $\varepsilon$-GaSe and $γ$-InSe crystals. We found that varying the temperature over a broad range from 5 K to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under th…
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The temperature effect on the Raman scattering efficiency is investigated in $\varepsilon$-GaSe and $γ$-InSe crystals. We found that varying the temperature over a broad range from 5 K to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 K and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the \mbox{so-called} B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone
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Submitted 24 October, 2020;
originally announced October 2020.
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Neutral and charged dark excitons in monolayer WS$_2$
Authors:
M. Zinkiewicz,
A. O. Slobodeniuk,
T. Kazimierczuk,
P. Kapuściński,
K. Oreszczuk,
M. Grzeszczyk,
M. Bartos,
K. Nogajewski,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
P. Kossacki,
M. Potemski,
A. Babiński,
M. R. Molas
Abstract:
Low temperature and polarization resolved magneto-photoluminescence experiments are used to investigate the properties of dark excitons and dark trions in a monolayer of WS$_2$ encapsulated in hexagonal BN (hBN). We find that this system is an $n$-type doped semiconductor and that dark trions dominate the emission spectrum. In line with previous studies on WSe$_2$, we identify the Coulomb exchange…
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Low temperature and polarization resolved magneto-photoluminescence experiments are used to investigate the properties of dark excitons and dark trions in a monolayer of WS$_2$ encapsulated in hexagonal BN (hBN). We find that this system is an $n$-type doped semiconductor and that dark trions dominate the emission spectrum. In line with previous studies on WSe$_2$, we identify the Coulomb exchange interaction coupled neutral dark and grey excitons through their polarization properties, while an analogous effect is not observed for dark trions. Applying the magnetic field in both perpendicular and parallel configurations with respect to the monolayer plane, we determine the g-factor of dark trions to be $g\sim$-8.6. Their decay rate is close to 0.5 ns, more than 2 orders of magnitude longer than that of bright excitons.
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Submitted 28 May, 2020;
originally announced May 2020.
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The optical signature of few-layer ReSe$_2$
Authors:
Ł. Kipczak,
M. Grzeszczyk,
K. Olkowska-Pucko,
A. Babiński,
M. R. Molas
Abstract:
Optical properties of thin layers of rhenium diselenide (ReSe$_2$) with thickness ranging from mono- (1 ML) to nona-layer (9 MLs) are demonstrated. The photoluminescence (PL) and Raman scattering were measured at low ($T$=5 K) and room ($T$=300 K) temperature, respectively. The PL spectra of ReSe$_2$ layers display two well-resolved emission lines, which blueshift by about 120 meV when the layer t…
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Optical properties of thin layers of rhenium diselenide (ReSe$_2$) with thickness ranging from mono- (1 ML) to nona-layer (9 MLs) are demonstrated. The photoluminescence (PL) and Raman scattering were measured at low ($T$=5 K) and room ($T$=300 K) temperature, respectively. The PL spectra of ReSe$_2$ layers display two well-resolved emission lines, which blueshift by about 120 meV when the layer thickness decreases from 9 MLs to a monolayer. A rich structure of the observed low-energy Raman scattering modes can be explained within a linear chain model. The two phonon modes of intralayer vibrations, observed in Raman scattering spectra at about 120 cm$^{-1}$, exhibit very sensitive and opposite evolution as a function of layer thickness. It is shown that their energy difference can serve as a convenient and reliable tool to determine the thickness of ReSe$_2$ flakes in the few-layer limit.
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Submitted 21 July, 2020; v1 submitted 26 May, 2020;
originally announced May 2020.
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Valley polarization of singlet and triplet trions in WS$_2$ monolayer in magnetic fields
Authors:
P. Kapuściński,
D. Vaclavkova,
M. Grzeszczyk,
A. O. Slobodeniuk,
K. Nogajewski,
M. Bartos,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
A. Babiński,
M. Potemski,
M. R. Molas
Abstract:
The spectral signatures associated with different negatively charged exciton complexes (trions) in a WS$_2$ monolayer encapsulated in hBN, are analyzed from low temperature and polarization resolved reflectance contrast (RC) and photoluminescence (PL) experiments, with an applied magnetic field. Based on results obtained from the RC experiment, we show that the valley Zeeman effect affects the opt…
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The spectral signatures associated with different negatively charged exciton complexes (trions) in a WS$_2$ monolayer encapsulated in hBN, are analyzed from low temperature and polarization resolved reflectance contrast (RC) and photoluminescence (PL) experiments, with an applied magnetic field. Based on results obtained from the RC experiment, we show that the valley Zeeman effect affects the optical response of both the singlet and the triplet trion species through the evolution of their energy and of their relative intensity, when applying an external magnetic field. Our analysis allows us to estimate a free electron concentration of $\sim 1.3 \cdot 10^{11}$ cm$^{-2}$. The observed evolutions based on PL experiments on the same sample are different and can hardly be understood within the same simple frame highlighting the complexity of relaxation processes involved in the PL response.
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Submitted 10 May, 2020; v1 submitted 7 May, 2020;
originally announced May 2020.
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Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers
Authors:
Maciej R. Molas,
Anastasia V. Tyurnina,
Viktor Zólyomi,
Anna K. Ott,
Daniel J. Terry,
Matthew J. Hamer,
Celal Yelgel,
Adam Babiński,
Albert G. Nasibulin,
Andrea C. Ferrari,
Vladimir I. Fal'ko,
Roman Gorbachev
Abstract:
III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-depe…
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III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations.
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Submitted 6 March, 2020;
originally announced March 2020.
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The effect of metallic substrates on the optical properties of monolayer MoSe$_{2}$
Authors:
M. Grzeszczyk,
M. R. Molas,
K. Nogajewski,
M. Bartoš,
A. Bogucki,
C. Faugeras,
P. Kossacki,
A. Babiński,
M. Potemski
Abstract:
Atomically thin materials, like semiconducting transition metal dichalcogenides (S-TMDs), are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. We investigate the effect of several metallic substrates on the optical properties of MoSe$_2$ monolayer (ML) deposited on top of them with photoluminescence and reflect…
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Atomically thin materials, like semiconducting transition metal dichalcogenides (S-TMDs), are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. We investigate the effect of several metallic substrates on the optical properties of MoSe$_2$ monolayer (ML) deposited on top of them with photoluminescence and reflectance contrast techniques. The optical spectra of MoSe$_{2}$ MLs deposited on Pt, Au, Mo and Zr have distinctive metal-related lineshapes. In particular, a substantial variation in the intensity ratio and the energy separation between a negative trion and a neutral exciton is observed. It is shown that using metals as substrates affects the do** of S-TMD MLs. The explanation of the effect involves the Schottky barrier formation at the interface between the MoSe$_{2}$ ML and the metallic substrates. The alignment of energy levels at the metal/semiconductor junction allows for the transfer of charge carriers between them. We argue that a proper selection of metallic substrates can be a way to inject appropriate types of carriers into the respective bands of S-TMDs.
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Submitted 22 October, 2019;
originally announced October 2019.
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Breathing modes in few-layer MoTe$_2$ activated by h-BN encapsulation
Authors:
M. Grzeszczyk,
M. R. Molas,
M. Bartoš,
K. Nogajewski,
M. Potemski,
A. Babiński
Abstract:
The encapsulation of few-layer transition metal dichalcogenides (TMDs) in hexagonal boron nitride (h-BN) is known to improve significantly their optical and electronic properties. However, it may be expected that the h-BN encapsulation may affect also vibration properties of TMDs due to an atomically flat surface of h-BN layers. In order to study its effect on interlayer interactions in few-layer…
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The encapsulation of few-layer transition metal dichalcogenides (TMDs) in hexagonal boron nitride (h-BN) is known to improve significantly their optical and electronic properties. However, it may be expected that the h-BN encapsulation may affect also vibration properties of TMDs due to an atomically flat surface of h-BN layers. In order to study its effect on interlayer interactions in few-layer TMDs, we investigate low-energy Raman scattering spectra of bi- and trilayer MoTe$_2$. Surprisingly, three breathing modes are observed in the Raman spectra of the structures deposited on or encapsulated in h-BN as compared to a single breathing mode for the flakes deposited on a SiO$_2$/Si substrate. The shear mode is not affected by changing the MoTe$_2$ environment. The emerged structure of breathing modes is ascribed to the apparent interaction between the MoTe$_2$ layer and the bottom h-BN flake. The structure becomes visible due to a high-quality surface of the former flake. Consequently, the observed triple structure of breathing modes originates from the combination modes due to interlayer and layer-substrate interactions. Our results confirm that the h-BN encapsulation affects substantially vibration properties of layered materials.
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Submitted 5 May, 2020; v1 submitted 27 August, 2019;
originally announced August 2019.
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Energy spectrum of two-dimensional excitons in a non-uniform dielectric medium
Authors:
M. R. Molas,
A. O. Slobodeniuk,
K. Nogajewski,
M. Bartos,
Ł. Bala,
A. Babiński,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
M. Potemski
Abstract:
We demonstrate that, in monolayers (MLs) of semiconducting transition metal dichalcogenides, the $s$-type Rydberg series of excitonic states follows a simple energy ladder: $ε_n=-Ry^*/(n+δ)^2$, $n$=1,2,\ldots, in which $Ry^*$ is very close to the Rydberg energy scaled by the dielectric constant of the medium surrounding the ML and by the reduced effective electron-hole mass, whereas the ML polariz…
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We demonstrate that, in monolayers (MLs) of semiconducting transition metal dichalcogenides, the $s$-type Rydberg series of excitonic states follows a simple energy ladder: $ε_n=-Ry^*/(n+δ)^2$, $n$=1,2,\ldots, in which $Ry^*$ is very close to the Rydberg energy scaled by the dielectric constant of the medium surrounding the ML and by the reduced effective electron-hole mass, whereas the ML polarizability is only accounted for by $δ$. This is justified by the analysis of experimental data on excitonic resonances, as extracted from magneto-optical measurements of a high-quality WSe$_2$ ML encapsulated in hexagonal boron nitride (hBN), and well reproduced with an analytically solvable Schrödinger equation when approximating the electron-hole potential in the form of a modified Kratzer potential. Applying our convention to other, MoSe$_2$, WS$_2$, MoS$_2$ MLs encapsulated in hBN, we estimate an apparent magnitude of $δ$ for each of the studied structures. Intriguingly, $δ$ is found to be close to zero for WSe$_2$ as well as for MoS$_2$ monolayers, what implies that the energy ladder of excitonic states in these two-dimensional structures resembles that of Rydberg states of a three-dimensional hydrogen atom.
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Submitted 7 July, 2019; v1 submitted 11 February, 2019;
originally announced February 2019.
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Valley polarization of exciton-polaritons in monolayer WSe2 in a tunable microcavity
Authors:
M. Król,
K. Lekenta,
R. Mirek,
K. Łempicka,
D. Stephan,
K. Nogajewski,
M. R. Molas,
A. Babiński,
M. Potemski,
J. Szczytko,
B. Piętka
Abstract:
Monolayer transition metal dichalcogenides, known for exhibiting strong excitonic resonances, constitute a very interesting and versatile platform for investigation of light-matter interactions. In this work we report on a strong coupling regime between excitons in monolayer WSe2 and photons confined in an open, voltage-tunable dielectric microcavity. The tunability of our system allows us to exte…
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Monolayer transition metal dichalcogenides, known for exhibiting strong excitonic resonances, constitute a very interesting and versatile platform for investigation of light-matter interactions. In this work we report on a strong coupling regime between excitons in monolayer WSe2 and photons confined in an open, voltage-tunable dielectric microcavity. The tunability of our system allows us to extend the exciton-polariton state over a wide energy range and, in particular, to bring the excitonic component of the lower polariton mode into resonance with other excitonic transitions in monolayer WSe2. With selective excitation of spin-polarized exciton-polaritons we demonstrate the valley polarization when the polaritons from the lower branch come into resonance with a bright trion state in monolayer WSe2 and valley depolarization when they are in resonance with a dark trion state.
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Submitted 25 September, 2018;
originally announced September 2018.
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Tuning carrier concentration in a superacid treated MoS$_2$ monolayer
Authors:
Maciej R. Molas,
Katarzyna Gołasa,
Łukasz Bala,
Karol Nogajewski,
Miroslav Bartos,
Marek Potemski,
Adam Babiński
Abstract:
The effect of bis(trifluoromethane) sulfonimide (TFSI, superacid) treatment on the optical properties of MoS$_2$ monolayers is investigated by means of photoluminescence, reflectance contrast and Raman scattering spectroscopy employed in a broad temperature range. It is shown that when applied multiple times, the treatment results in progressive quenching of the trion emission/absorption and in th…
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The effect of bis(trifluoromethane) sulfonimide (TFSI, superacid) treatment on the optical properties of MoS$_2$ monolayers is investigated by means of photoluminescence, reflectance contrast and Raman scattering spectroscopy employed in a broad temperature range. It is shown that when applied multiple times, the treatment results in progressive quenching of the trion emission/absorption and in the redshift of the neutral exciton emission/absorption associated with both the A and B excitonic resonances. Based on this evolution, a trion complex related to the B exciton in monolayer MoS$_2$ is unambiguously identified. A defect-related emission observed at low temperatures also disappears from the spectrum as a result of the treatment. Our observations are attributed to effective passivation of defects on the MoS$_{2}$ monolayer surface. The passivation reduces the carrier density, which in turn affects the out-of-plane electric field in the sample. The observed tuning of the carrier concentration strongly influences also the Raman scattering in the MoS$_2$ monolayer. An enhancement of Raman scattering at resonant excitation in the vicinity of the A neutral exciton is clearly seen for both the out-of-plane A$_1^{'}$ and in-plane E$^{'}$ modes. On the contrary, when the excitation is in resonance with a corresponding trion, the Raman scattering features become hardly visible. These results confirm the role of the excitonic charge state plays in the resonance effect of the excitation energy on the Raman scattering in transition metal dichalcogenides.
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Submitted 30 November, 2018; v1 submitted 22 September, 2018;
originally announced September 2018.
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Raman scattering from the bulk inactive out-of-plane B$^{1}_{2\text{g}}$ mode in few-layer MoTe$_{2}$
Authors:
M. Grzeszczyk,
K. Gołasa,
M. R. Molas,
K. Nogajewski,
M. Zinkiewicz,
M. Potemski,
A. Wysmołek,
A. Babiński
Abstract:
Raman scattering from the out-of-plane vibrational modes (A$_{1\text{g}}$/A'$_{1}$), which originate from the bulk-inactive out-of-plane B$^{1}_{2\text{g}}$ mode, are studied in few-layer MoTe$_{2}$. Temperature-dependent measurements reveal a doublet structure of the corresponding peaks in the Raman scattering spectra of tetralayer and pentalayer samples. A strong enhancement of their lower energ…
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Raman scattering from the out-of-plane vibrational modes (A$_{1\text{g}}$/A'$_{1}$), which originate from the bulk-inactive out-of-plane B$^{1}_{2\text{g}}$ mode, are studied in few-layer MoTe$_{2}$. Temperature-dependent measurements reveal a doublet structure of the corresponding peaks in the Raman scattering spectra of tetralayer and pentalayer samples. A strong enhancement of their lower energy components is recorded at low temperature for 1.91 eV and 1.96 eV laser excitation. We discuss the attribution of the peaks to the inner modes of the respective Raman-active vibrations. The temperature evolution of their intensity strongly suggests a resonant character of the employed excitation, which leads to the mode enhancement at low temperature. The resonance of the laser light with the singularity of the electronic density of states at the $M$ point of the Brillouin zone in MoTe$_{2}$ is proposed to be responsible for the observed effects.
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Submitted 7 August, 2018;
originally announced August 2018.
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Raman scattering excitation spectroscopy in monolayer WS$_2$
Authors:
Maciej R. Molas,
Karol Nogajewski,
Marek Potemski,
Adam Babinski
Abstract:
Resonant Raman scattering is investigated in monolayer WS$_2$ at low temperature with the aid of an unconventional spectroscopy technique, $i.e.$, Raman scattering excitation (RSE). The RSE spectrum is made up by swee** the excitation energy, when the detection energy is fixed in resonance with excitonic transitions related to neutral and/or charged excitons. We demonstrate that the shape of the…
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Resonant Raman scattering is investigated in monolayer WS$_2$ at low temperature with the aid of an unconventional spectroscopy technique, $i.e.$, Raman scattering excitation (RSE). The RSE spectrum is made up by swee** the excitation energy, when the detection energy is fixed in resonance with excitonic transitions related to neutral and/or charged excitons. We demonstrate that the shape of the RSE spectrum strongly depends on a selected detection energy. The out-going resonance with the neutral exciton leads to an extremely rich RSE spectrum displaying several Raman scattering features not reported so far, while no clear effect on the associated background photoluminescence is observed. Instead, a strong enhancement of the emission due to the negatively charged exciton is apparent when the out-going photons resonate with this exciton. Presented results show that the RSE spectroscopy can be a useful technique to study electron-phonon interactions in thin layers of transition metal dichalcogenides.
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Submitted 9 May, 2017; v1 submitted 27 March, 2017;
originally announced March 2017.
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Levi decomposition of nilpotent centralisers in classical groups
Authors:
Alex P. Babinski,
David I. Stewart
Abstract:
We check that the connected centralisers of nilpotent elements in the orthogonal and symplectic groups have Levi decompositions in even characteristic. This provides a justification for the identification of the isomorphism classes of the reductive quotients as stated in [Liebeck, Seitz; Unipotent and Nilpotent Classes in Simple Algebraic Groups and Lie Algebras].
We check that the connected centralisers of nilpotent elements in the orthogonal and symplectic groups have Levi decompositions in even characteristic. This provides a justification for the identification of the isomorphism classes of the reductive quotients as stated in [Liebeck, Seitz; Unipotent and Nilpotent Classes in Simple Algebraic Groups and Lie Algebras].
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Submitted 3 November, 2016;
originally announced November 2016.
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Resonant quenching of Raman scattering due to out-of-plane A$_{1g}$/A'$_1$ modes in few-layer MoTe$_2$
Authors:
K. Gołasa,
M. Grzeszczyk,
M. R. Molas,
M. Zinkiewicz,
Ł. Bala,
K. Nogajewski,
M. Potemski,
A. Wysmołek,
A. Babiński
Abstract:
Temperature-dependent (5 K to 300 K) Raman scattering study of A$_{1g}$/A'$_1$ phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe$_2$ is reported. The temperature evolution of the modes' intensity critically depends on the flake thickness. In particular with $λ$=632.8 nm light excitation, a strongly non-monotonic dependence of the A$_{1g}$ mode intensity is obse…
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Temperature-dependent (5 K to 300 K) Raman scattering study of A$_{1g}$/A'$_1$ phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe$_2$ is reported. The temperature evolution of the modes' intensity critically depends on the flake thickness. In particular with $λ$=632.8 nm light excitation, a strongly non-monotonic dependence of the A$_{1g}$ mode intensity is observed in 2L MoTe$_2$. The intensity decreases with decreasing temperature down to 220 K and the A$_{1g}$ mode almost completely vanishes from the Stokes scattering spectrum in the temperature range between 160 K and 220 K. The peak recovers at lower temperatures and at T=5 K it becomes three times more intense that at room temperature. Similar non-monotonic intensity evolution is observed for the out-of-plane mode in 3L MoTe$_2$ in which tellurium atoms in all three layers vibrate in-phase. The intensity of the other out-of-plane Raman-active mode, (with vibrations of tellurium atoms in the central layer shifted by 180$^o$ with respect to the vibrations in outer layers), only weakly depends on temperature. The observed quenching of the Raman scattering in 2L and 3L MoTe$_2$ is attributed to a destructive interference between the resonant and non-resonant contributions to the Raman scattering amplitude. The observed "antiresonance" is related to the electronic excitation at the M point of the Brillouin zone in few-layer MoTe$_2$.
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Submitted 24 November, 2016; v1 submitted 14 August, 2016;
originally announced August 2016.
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Energy spectrum of confined positively charged excitons in single quantum dots
Authors:
M. R. Molas,
A. Wojs,
A. A. L. Nicolet,
A. Babinski,
M. Potemski
Abstract:
A theoretical model, which relates the binding energy of a positively charged exciton in a quantum dot with the confinement energy is presented. It is shown that the binding energy, defined as the energy difference between the corresponding charged and neutral complexes confined on the same excitonic shell strongly depends on the shell index. Moreover, it is shown that the ratio of the binding ene…
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A theoretical model, which relates the binding energy of a positively charged exciton in a quantum dot with the confinement energy is presented. It is shown that the binding energy, defined as the energy difference between the corresponding charged and neutral complexes confined on the same excitonic shell strongly depends on the shell index. Moreover, it is shown that the ratio of the binding energy for positively charged excitons from the $p$- and $s$-shells of a dot depends mainly on the nearly perfect confinement in the dot, which is due to the "hidden symmetry" of the multi-electron-hole system. We applied the theory to the excitons confined to a single GaAlAs/AlAs quantum dots. The relevant binding energy was determined using the micro-photoluminescence and micro-photoluminescence excitation magneto-spectroscopy. We show that within our theory, the confinement energy determined using the ratio of the binding energy corresponds well to the actual confinement energy of the investigated dot.
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Submitted 8 March, 2016;
originally announced March 2016.
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The excited spin-triplet state of a charged exciton in quantum dots
Authors:
M. R. Molas,
A. A. L. Nicolet,
B. Pietka,
A. Babinski,
M. Potemski
Abstract:
We report on single-object spectroscopic studies of a characteristic set of three resonances which appear in GaAlAs/AlAs quantum dot structures. The experiments included the photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy, photon-correlation measurements, analysis of the linear polarization of the emission spectra as well as the PL and PLE spectroscopy performed as a fun…
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We report on single-object spectroscopic studies of a characteristic set of three resonances which appear in GaAlAs/AlAs quantum dot structures. The experiments included the photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy, photon-correlation measurements, analysis of the linear polarization of the emission spectra as well as the PL and PLE spectroscopy performed as a function of magnetic field. The investigated resonances are assigned to three different states of a positively charged exciton: a singlet ground state, a conventional triplet state (involving an electron from the ground state electronic $s$-shell), and additionally, a highly excited triplet state (involving the electron from the excited electronic $p$-shell). Advantageously (due to partially suppressed relaxation efficiency), the emission due to the highly excited triplet can seen in the spectra which allows us to scrupulously determine its properties and compare them to those of the conventional triplet state. Whereas both triplet states show similar patterns of the fine structure and Zeeman splitting, the splitting amplitudes are found to be significantly different for these two states. The presented results emphasize the role of the symmetry of the electronic state on the properties of the triplet states of the two holes + electron excitonic complex.
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Submitted 11 February, 2016;
originally announced February 2016.
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Raman scattering in few-layer MoTe$_{2}$
Authors:
M. Grzeszczyk,
K. Gołasa,
M. Zinkiewicz,
K. Nogajewski,
M. R. Molas,
M. Potemski,
A. Wysmołek,
A. Babiński
Abstract:
We report on room-temperature Raman scattering measurements in few-layer crystals of exfoliated molybdenum ditelluride (MoTe$_{2}$) performed with the use of 632.8 nm (1.96 eV) laser light excitation. In agreement with recent study reported by G. Froehlicher et al, (2015 $Nano$ $Lett.$ 15 6481) we observe a complex structure of the out-of-plane vibrational modes (A$_{1g}$/A$^{'}_{1}$), which can b…
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We report on room-temperature Raman scattering measurements in few-layer crystals of exfoliated molybdenum ditelluride (MoTe$_{2}$) performed with the use of 632.8 nm (1.96 eV) laser light excitation. In agreement with recent study reported by G. Froehlicher et al, (2015 $Nano$ $Lett.$ 15 6481) we observe a complex structure of the out-of-plane vibrational modes (A$_{1g}$/A$^{'}_{1}$), which can be explained in terms of interlayer interactions between single atomic planes of MoTe$_{2}$. In the case of low-energy shear and breathing modes of rigid interlayer vibrations it is shown that their energy evolution with the number of layers can be well reproduced within a linear chain model with only the nearest neighbor interaction taken into account. Based on this model the corresponding in-plane and out-of-plane force constants are determined. We also show that the Raman scattering in MoTe$_{2}$ measured using 514.5 nm (2.41 eV) laser light excitation results in much simpler spectra. We argue that the rich structure of the out-of-plane vibrational modes observed in Raman scattering spectra excited with the use of 632.8 nm laser light results from its resonance with the electronic transition at the M or K points of the MoTe$_{2}$ first Brillouin zone.
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Submitted 15 April, 2016; v1 submitted 23 November, 2015;
originally announced November 2015.
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Quadexciton cascade and fine structure splitting of the triexciton in a single quantum dot
Authors:
M. R. Molas,
A. A. L. Nicolet,
A. Babinski,
M. Potemski
Abstract:
We report the properties of emission lines associated with the cascaded recombination of a quadexciton in single GaAlAs/AlAs quantum dots, studied by means of polarization-resolved photoluminescence and single-photon correlation experiments. It is found that photons which are emitted in a double-step 4X-3X process preserve their linear polarization, similarly to the case of conserved polarization…
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We report the properties of emission lines associated with the cascaded recombination of a quadexciton in single GaAlAs/AlAs quantum dots, studied by means of polarization-resolved photoluminescence and single-photon correlation experiments. It is found that photons which are emitted in a double-step 4X-3X process preserve their linear polarization, similarly to the case of conserved polarization of correlated photons in the 2X-X cascade. In contrast, an emission of either co-linear or cross-linear pairs of photons is observed for the 3X-2X cascade. Each emission line associated with the quadexciton cascade shows doublet structure in the polarization-resolved photoluminescence experiment. The maximum splitting is seen when the polarization axis is chosen along and perpendicular to the [110] crystallographic direction. This effect is ascribed to the fine structure splitting of the exciton and triexciton states in the presence of an anisotropic confining potential of ae dot. We also show that the splitting in the triexciton state surpasses that in the exciton state by a factor up to eight and their ratio scales with the energy distance between the 3X and X emission lines, thus, very likely, with a lateral size and/or a composition of the dot.
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Submitted 13 August, 2015;
originally announced August 2015.
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Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer
Authors:
T. Kazimierczuk,
A. Golnik,
P. Kossacki,
J. Gaj,
Z. Wasilewski,
A. Babinski
Abstract:
Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence lines with a low spatial density. We identify lines related to neutral exciton and biexciton as well as trions. Exciton emission antibunching (second order correla…
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Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence lines with a low spatial density. We identify lines related to neutral exciton and biexciton as well as trions. Exciton emission antibunching (second order correlation value of g^2(0)=0.16) and biexciton-exciton emission cascade prove non-classical emission from the dots and confirm their potential as single photon sources.
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Submitted 20 July, 2011;
originally announced July 2011.
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Optical readout of charge and spin in a self-assembled quantum dot in a strong magnetic field
Authors:
M. Korkusinski,
P. Hawrylak,
A. Babinski,
M. Potemski,
S. Raymond,
Z. Wasilewski
Abstract:
We present a theory and experiment demonstrating optical readout of charge and spin in a single InAs/GaAs self-assembled quantum dot. By applying a magnetic field we create the filling factor 2 quantum Hall singlet phase of the charged exciton. Increasing or decreasing the magnetic field leads to electronic spin-flip transitions and increasing spin polarization. The increasing total spin of elec…
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We present a theory and experiment demonstrating optical readout of charge and spin in a single InAs/GaAs self-assembled quantum dot. By applying a magnetic field we create the filling factor 2 quantum Hall singlet phase of the charged exciton. Increasing or decreasing the magnetic field leads to electronic spin-flip transitions and increasing spin polarization. The increasing total spin of electrons appears as a manifold of closely spaced emission lines, while spin flips appear as discontinuities of emission lines. The number of multiplets and discontinuities measures the number of carriers and their spin. We present a complete analysis of the emission spectrum of a single quantum dot with N=4 electrons and a single hole, calculated and measured in magnetic fields up to 23 Tesla.
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Submitted 6 June, 2007;
originally announced June 2007.
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Non-linear exciton spin-splitting in single InAs/GaAs self-assembled quantum structures in ultrahigh magnetic fields
Authors:
A. Babinski,
G. Ortner,
S. Raymond,
M. Potemski,
M. Bayer,
P. Hawrylak,
A. Forchel,
Z. Wasilewski,
S. Fafard
Abstract:
We report on the magnetic field dispersion of the exciton spin-splitting and diamagnetic shift in single InAs/GaAs quantum dots (QDs) and dot molecules (QDMs) up to $B$ = 28 T. Only for systems with strong geometric confinement, the dispersions can be well described by simple field dependencies, while for dots with weaker confinement considerable deviations are observed: most importantly, in the…
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We report on the magnetic field dispersion of the exciton spin-splitting and diamagnetic shift in single InAs/GaAs quantum dots (QDs) and dot molecules (QDMs) up to $B$ = 28 T. Only for systems with strong geometric confinement, the dispersions can be well described by simple field dependencies, while for dots with weaker confinement considerable deviations are observed: most importantly, in the high field limit the spin-splitting shows a non-linear dependence on $B$, clearly indicating light hole admixtures to the valence band ground state.
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Submitted 11 March, 2005;
originally announced March 2005.
