Photoluminescence enhancement at the vertical van der Waals semiconductor-metal heterostructures
Authors:
Hafiz Muhammad Shakir,
Abdulsalam Aji Suleiman,
Kübra Nur Kalkan,
Amir Parsi,
Uğur Başçı,
Mehmet Atıf Durmuş,
Ahmet Osman Ölçer,
Hilal Korkut,
Cem Sevik,
İbrahim Sarpkaya,
Talip Serkan Kasırga
Abstract:
Excitons in monolayer transition metal dichalcogenides (TMDCs) offer intriguing new possibilities for optoelectronics with no analogues in bulk semiconductors. Yet, intrinsic defects in TMDCs limit the radiative exciton recombination pathways. As a result, the photoluminescence (PL) quantum yield (QY) is limited. Methods like superacid treatment, electrical do**, and plasmonic engineering can in…
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Excitons in monolayer transition metal dichalcogenides (TMDCs) offer intriguing new possibilities for optoelectronics with no analogues in bulk semiconductors. Yet, intrinsic defects in TMDCs limit the radiative exciton recombination pathways. As a result, the photoluminescence (PL) quantum yield (QY) is limited. Methods like superacid treatment, electrical do**, and plasmonic engineering can inhibit nonradiative decay channels and enhance PL. Here, we show a more straightforward approach that allows PL enhancement. An engineered vertical van der Waals (vdW) metal-monolayer semiconductor junction (MSJ) results in PL enhancement of more than an order of magnitude at technologically relevant excitation powers. Such MSJ can be constructed by vertically stacking metals with suitable work function either above or below a monolayer semiconducting TMDC. Our experiments reveal that the underlying PL enhancement mechanism is to be the suppressed exciton quenching due to the absence of metal-induced gap states and weak Fermi level pinning, thanks to the vdW gapped interface between the metal and the TMDC. Our time-resolved PL measurements further indicate that reduced exciton-exciton annihilation, even at high generation rates, contributes to the observed PL enhancement. The PL intensity is further increased by the proximity of surface plasmons in the metal with the TMDC layer. Our findings shed light on the interaction at vdW metal-semiconductor interfaces and offer a path to improving the optoelectronic performance of semiconducting TMDCs.
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Submitted 31 May, 2024;
originally announced May 2024.
Synthesis of Ultra-Thin Superionic Cu2Se and New Aspects of the Low-Temperature Crystal Configurations
Authors:
Abdulsalam Aji Suleiman,
Amir Parsi,
Mohammadali Razeghi,
Uğur Başçı,
Saeyoung Oh,
Doruk Pehlivanoğlu,
Hu Young Jeoung,
Kibum Kang,
T. Serkan Kasırga
Abstract:
Superionic conductors offer unique advantages for novel technological devices in various fields, such as energy storage and neuromorphic computing. Above 414 K, Cu2Se turns into a well-known superionic conductor via a phase transition, and it is demonstrated to exhibit peculiar electrical and thermoelectric properties in bulk. Here, we report a large-area synthesis of ultra-thin single crystalline…
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Superionic conductors offer unique advantages for novel technological devices in various fields, such as energy storage and neuromorphic computing. Above 414 K, Cu2Se turns into a well-known superionic conductor via a phase transition, and it is demonstrated to exhibit peculiar electrical and thermoelectric properties in bulk. Here, we report a large-area synthesis of ultra-thin single crystalline Cu2Se using the chemical vapor deposition method. We demonstrate that Cu2Se crystals exhibit optically and electrically controllable robust phase reconfiguration below 414 K. Moreover, our results show that the mobility of the liquid-like Cu ion vacancies in Cu2Se causes macroscopic fluctuations in the Cu ordering. Consequently, phase variations are not dictated by the diffusive motion of the ions but by the local energy minima formed due to the interplay between the extrinsic and the intrinsic material parameters. As a result, long-range ordering of the crystal below 414 K is optically observable at a micrometer scale. Our results show that Cu2Se could find applications beyond thermoelectric such as smart optical coatings, optoelectronic switching, and ionic transistors.
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Submitted 29 April, 2023;
originally announced May 2023.
