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The Dresden in-situ (S)TEM special with a continuous-flow liquid-helium cryostat
Authors:
Felix Börrnert,
Felix Kern,
Franziska Seifert,
Thomas Riedel,
Heiko Müller,
Bernd Büchner,
Axel Lubk
Abstract:
Fundamental solid state physics phenomena typically occur at very low temperatures, requiring liquid helium cooling in experimental studies. Transmission electron microscopy is a well-established characterization method, which allows probing crucial materials properties down to nanometer and even atomic resolution. Due to the limited space in the object plane, however, suitable liquid-helium cooli…
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Fundamental solid state physics phenomena typically occur at very low temperatures, requiring liquid helium cooling in experimental studies. Transmission electron microscopy is a well-established characterization method, which allows probing crucial materials properties down to nanometer and even atomic resolution. Due to the limited space in the object plane, however, suitable liquid-helium cooling is very challenging. To overcome this limitation, resolving power was sacrificed in our Dresden in-situ (S)TEM special, resulting in more than 60 mm usable experimental space in all directions with the specimen in the center. With the installation of a continuous-flow liquid-helium cryostat, any temperature between 6.5 K and 400 K can be set precisely and kept for days. The information limit of the Dresden in-situ (S)TEM special is about 5 nm. It is shown that the resolution of the Dresden in-situ (S)TEM special is currently not limited by aberrations, but by external instabilities, that are currently addressed.
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Submitted 1 October, 2019;
originally announced October 2019.
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Nearest-neighbor Kitaev exchange blocked by charge order in electron doped $α$-RuCl$_{3}$
Authors:
A. Koitzsch,
C. Habenicht,
E. Mueller,
M. Knupfer,
B. Buechner,
S. Kretschmer,
M. Richter,
J. van den Brink,
F. Boerrnert,
D. Nowak,
A. Isaeva,
Th. Doert
Abstract:
A quantum spin-liquid might be realized in $α$-RuCl$_{3}$, a honeycomb-lattice magnetic material with substantial spin-orbit coupling. Moreover, $α$-RuCl$_{3}$ is a Mott insulator, which implies the possibility that novel exotic phases occur upon do**. Here, we study the electronic structure of this material when intercalated with potassium by photoemission spectroscopy, electron energy loss spe…
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A quantum spin-liquid might be realized in $α$-RuCl$_{3}$, a honeycomb-lattice magnetic material with substantial spin-orbit coupling. Moreover, $α$-RuCl$_{3}$ is a Mott insulator, which implies the possibility that novel exotic phases occur upon do**. Here, we study the electronic structure of this material when intercalated with potassium by photoemission spectroscopy, electron energy loss spectroscopy, and density functional theory calculations. We obtain a stable stoichiometry at K$_{0.5}$RuCl$_3$. This gives rise to a peculiar charge disproportionation into formally Ru$^{2+}$ (4$d^6$) and Ru$^{3+}$ (4$d^5$). Every Ru 4$d^5$ site with one hole in the $t_{2g}$ shell is surrounded by nearest neighbors of 4$d^6$ character, where the $t_{2g}$ level is full and magnetically inert. Thus, each type of Ru sites forms a triangular lattice and nearest-neighbor interactions of the original honeycomb are blocked.
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Submitted 13 October, 2017; v1 submitted 15 September, 2017;
originally announced September 2017.
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Transport of Intensity Phase Retrieval of Arbitrary Wave Fields Including Vortices
Authors:
Axel Lubk,
Giulio Guzzinati,
Felix Börrnert,
Jo Verbeeck
Abstract:
The phase problem can be considered as one of the cornerstones of quantum mechanics intimately connected to the detection process and the uncertainty relation. The latter impose fundamental limits on the manifold phase reconstruction schemes invented to date in particular at small magnitudes of the quantum wave. Here, we show that a rigorous solution of the Transport of Intensity Reconstruction (T…
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The phase problem can be considered as one of the cornerstones of quantum mechanics intimately connected to the detection process and the uncertainty relation. The latter impose fundamental limits on the manifold phase reconstruction schemes invented to date in particular at small magnitudes of the quantum wave. Here, we show that a rigorous solution of the Transport of Intensity Reconstruction (TIE) scheme in terms of a linear elliptic partial differential equation for the phase provides reconstructions even in the presence of wave zeros if particular boundary conditions (BCs) are given. We furthermore discuss how partial coherence hampers phase reconstruction and show that a modified version of the TIE reconstructs the curl-free current density at arbitrary (in-)coherence. This opens the way for a large variety of new applications in fields as diverse as astrophysics, geophysics, photonics, acoustics, and electron microscopy, where zeros in the respective wave field are a ubiquitous feature.
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Submitted 7 September, 2016; v1 submitted 5 December, 2014;
originally announced December 2014.
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Stabilization of carbon nanotubes by filling with inner tubes: An optical spectroscopy study on double-walled carbon nanotubes under hydrostatic pressure
Authors:
B. Anis,
K. Haubner,
F. Börrnert,
L. Dunsch,
M. H. Rümmeli,
C. A. Kuntscher
Abstract:
The stabilization of carbon nanotubes via the filling with inner tubes is demonstrated by probing the optical transitions in double-walled carbon nanotube bundles under hydrostatic pressure with optical spectroscopy. Double-walled carbon nanotube films were prepared from fullerene peapods and characterized by HRTEM and optical spectroscopy. In comparison to single-walled carbon nanotubes, the pres…
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The stabilization of carbon nanotubes via the filling with inner tubes is demonstrated by probing the optical transitions in double-walled carbon nanotube bundles under hydrostatic pressure with optical spectroscopy. Double-walled carbon nanotube films were prepared from fullerene peapods and characterized by HRTEM and optical spectroscopy. In comparison to single-walled carbon nanotubes, the pressure-induced redshifts of the optical transitions in the outer tubes are significantly smaller below $\sim$10 GPa, demonstrating the enhanced mechanical stability due to the inner tube already at low pressures. Anomalies at the critical pressure P$_d$$\approx$12 GPa signal the onset of the pressure-induced deformation of the tubular cross-sections. The value of P$_d$ is in very good agreement with theoretical predictions of the pressure-induced structural transitions in double-walled carbon nanotube bundles with similar average diameters.
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Submitted 18 October, 2012;
originally announced October 2012.
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Lattice Expansion in Seamless Bi layer Graphene Constrictions at High Bias
Authors:
Felix Boerrnert,
Amelia Barreiro,
Daniel Wolf,
Mikhail I. Katsnelson,
Bernd Buechner,
Lieven M. K. Vandersypen,
Mark H. Ruemmeli
Abstract:
Our understanding of sp2 carbon nanostructures is still emerging and is important for the development of high performance all carbon devices. For example, in terms of the structural behavior of graphene or bi-layer graphene at high bias, little to nothing is known. To this end we investigated bi-layer graphene constrictions with closed edges (seamless) at high bias using in situ atomic resolution…
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Our understanding of sp2 carbon nanostructures is still emerging and is important for the development of high performance all carbon devices. For example, in terms of the structural behavior of graphene or bi-layer graphene at high bias, little to nothing is known. To this end we investigated bi-layer graphene constrictions with closed edges (seamless) at high bias using in situ atomic resolution transmission electron microscopy. We directly observe a highly localized anomalously large lattice expansion inside the constriction. Both the current density and lattice expansion increase as the bi-layer graphene constriction narrows. As the constriction width decreases below 10 nm, shortly before failure, the current density rises to 4 \cdot 109 A cm-2 and the constriction exhibits a lattice expansion with a uniaxial component showing an expansion approaching 5 % and an isotropic component showing an expansion exceeding 1 %. The origin of the lattice expansion is hard to fully ascribe to thermal expansion. Impact ionization is a process in which charge carriers transfer from bonding states to antibonding states thus weakening bonds. The altered character of C-C bonds by impact ionization could explain the anomalously large lattice expansion we observe in seamless bi-layer graphene constrictions. Moreover, impact ionization might also contribute to the observed anisotropy in the lattice expansion, although strain is probably the predominant factor.
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Submitted 10 August, 2012;
originally announced August 2012.
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Graphene at high bias: cracking, layer by layer sublimation and fusing
Authors:
Amelia Barreiro,
Felix Boerrnert,
Mark H. Ruemmeli,
Bernd Buechner,
Lieven M. K. Vandersypen
Abstract:
Graphene and few-layer graphene at high bias expose a wealth of phenomena due to the high temperatures reached. With in-situ transmission electron microscopy (TEM) we observe directly how the current modifies the structure, and vice versa. In some samples, cracks propagate from the edges of the flakes, leading to the formation of narrow constrictions or to nanometer spaced gaps after breakdown. In…
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Graphene and few-layer graphene at high bias expose a wealth of phenomena due to the high temperatures reached. With in-situ transmission electron microscopy (TEM) we observe directly how the current modifies the structure, and vice versa. In some samples, cracks propagate from the edges of the flakes, leading to the formation of narrow constrictions or to nanometer spaced gaps after breakdown. In other samples we find layer-by-layer evaporation of few-layer graphene, which could be exploited for the controlled production of single layer graphene from multi-layered samples. Surprisingly, we even find that two pieces of graphene that overlap can heal out at high bias and form one continuous sheet. These findings open up new avenues to structure graphene for specific device applications.
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Submitted 14 March, 2012;
originally announced March 2012.
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Understanding the catalyst-free transformation of amorphous carbon into graphene by current-induced annealing
Authors:
Amelia Barreiro,
Felix Boerrnert,
Stanislav M. Avdoshenko,
Bernd Rellinghaus,
Gianaurelio Cuniberti,
Mark H. Ruemmeli,
Lieven M. K. Vandersypen
Abstract:
We shed light on the catalyst-free growth of graphene from amorphous carbon (a-C) by current-induced annealing by witnessing the mechanism both with in-situ transmission electron microscopy and with molecular dynamics simulations. Both in experiment and in simulation, we observe that small a-C clusters on top of a graphene substrate rearrange and crystallize into graphene patches. The process is a…
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We shed light on the catalyst-free growth of graphene from amorphous carbon (a-C) by current-induced annealing by witnessing the mechanism both with in-situ transmission electron microscopy and with molecular dynamics simulations. Both in experiment and in simulation, we observe that small a-C clusters on top of a graphene substrate rearrange and crystallize into graphene patches. The process is aided by the high temperatures involved and by the van der Waals interactions with the substrate. Furthermore, in the presence of a-C, graphene can grow from the borders of holes and form a seamless graphene sheet, a novel finding that has not been reported before and that is reproduced by the simulations as well. These findings open up new avenues for bottom-up engineering of graphene-based devices.
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Submitted 21 November, 2012; v1 submitted 15 January, 2012;
originally announced January 2012.
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Graphene: Piecing it together
Authors:
Mark H. Rümmeli,
Claudia G. Rocha,
Frank Ortmann,
Imad Ibrahim,
Haldun Sevincli,
Felix Börrnert,
Jens Kunstmann,
Alicja Bachmatiuk,
Markus Pötsche,
Masashi Shiraishi,
Meyya Meyyappan,
Bernd Büchner,
Stephan Roche,
Gianaurelio Cuniberti
Abstract:
Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum h…
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Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum hall effect and the absence of localization. The latter is attractive for graphene-based field effect transistors. However, if graphene is to be the material for future electronics, then significant hurdles need to be surmounted, namely, it needs to be mass produced in an economically viable manner and be of high crystalline quality with no or virtually no defects or grains boundaries. Moreover, it will need to be processable with atomic precision. Hence, the future of graphene as a material for electronic based devices will depend heavily on our ability to piece graphene together as a single crystal and define its edges with atomic precision. In this progress report, the properties of graphene that make it so attractive as a material for electronics is introduced to the reader. The focus then centers on current synthesis strategies for graphene and their weaknesses in terms of electronics applications are highlighted.
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Submitted 3 August, 2011;
originally announced August 2011.
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Direct Low Temperature Nano-Graphene Synthesis over a Dielectric Insulator
Authors:
Mark H. Rümmeli,
Alicja Bachmatiuk,
Andrew Scott,
Felix Börrnert,
Jamie H. Warner,
Volker Hoffmann,
Jarrn-Horng Lin,
Gianaurelio Cuniberti,
Bernd Büchner
Abstract:
Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post synthesis transfer of the graphene onto a Si wafer or in the case of epitaxial growth on SiC, temperatures above 1000 °C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon techn…
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Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post synthesis transfer of the graphene onto a Si wafer or in the case of epitaxial growth on SiC, temperatures above 1000 °C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nano-graphene and few layer graphene is directly formed over magnesium oxide and can be achieved at temperatures as low as 325 °C.
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Submitted 2 March, 2011;
originally announced March 2011.
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The catalytic potential of high-k dielectrics for graphene formation
Authors:
Andrew Scott,
Arezoo Dianat,
Felix Börrnert,
Alicja Bachmatiuk,
Shasha Zhang,
Jamie H. Warner,
Ewa Borowiak-Palen,
Martin Knupfer,
Bernd Büchner,
Gianaurelio Cuniberti,
Mark H. Rümmeli
Abstract:
The growth of single and multilayer graphene nano-flakes on MgO and ZrO2 at low temperatures is shown through transmission electron microscopy. The graphene nano-flakes are ubiquitously anchored at step edges on MgO (100) surfaces. Density functional theory investigations on MgO (100) indicate C2H2 decomposition and carbon adsorption at step-edges. Hence, both the experimental and theoretical data…
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The growth of single and multilayer graphene nano-flakes on MgO and ZrO2 at low temperatures is shown through transmission electron microscopy. The graphene nano-flakes are ubiquitously anchored at step edges on MgO (100) surfaces. Density functional theory investigations on MgO (100) indicate C2H2 decomposition and carbon adsorption at step-edges. Hence, both the experimental and theoretical data highlight the importance of step sites for graphene growth on MgO.
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Submitted 25 February, 2011;
originally announced February 2011.
