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Nonlinear transport due to magnetic-field-induced flat bands in the nodal-line semimetal ZrTe5
Authors:
Yongjian Wang,
Thomas Boemerich,
**hong Park,
Henry F. Legg,
A. A. Taskin,
Achim Rosch,
Yoichi Ando
Abstract:
The Dirac material ZrTe$_5$ at very low carrier density was recently found to be a nodal-line semimetal, where ultra-flat bands are expected to emerge in magnetic fields parallel to the nodal-line plane. Here we report that in very low carrier-density samples of ZrTe$_5$, when the current and the magnetic field are both along the crystallographic $a$ axis, the current-voltage characteristics prese…
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The Dirac material ZrTe$_5$ at very low carrier density was recently found to be a nodal-line semimetal, where ultra-flat bands are expected to emerge in magnetic fields parallel to the nodal-line plane. Here we report that in very low carrier-density samples of ZrTe$_5$, when the current and the magnetic field are both along the crystallographic $a$ axis, the current-voltage characteristics presents a pronounced nonlinearity which tends to saturate in the ultra quantum limit. The magnetic-field dependence of the nonlinear coefficient is well explained by the Boltzmann theory for flat-band transport, and we argue that this nonlinear transport is likely due to the combined effect of flat bands and charge puddles, the latter appear due to very low carrier densities.
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Submitted 26 September, 2023; v1 submitted 22 August, 2022;
originally announced August 2022.
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Gigantic magnetochiral anisotropy in the topological semimetal ZrTe5
Authors:
Yongjian Wang,
Henry F. Legg,
Thomas Boemerich,
**hong Park,
Sebastian Biesenkamp,
A. A. Taskin,
Markus Braden,
Achim Rosch,
Yoichi Ando
Abstract:
Topological materials with broken inversion symmetry can give rise to nonreciprocal responses, such as the current rectification controlled by magnetic fields via magnetochiral anisotropy. Bulk nonreciprocal responses usually stem from relativistic corrections and are always very small. Here we report our discovery that ZrTe5 crystals in proximity to a topological quantum phase transition present…
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Topological materials with broken inversion symmetry can give rise to nonreciprocal responses, such as the current rectification controlled by magnetic fields via magnetochiral anisotropy. Bulk nonreciprocal responses usually stem from relativistic corrections and are always very small. Here we report our discovery that ZrTe5 crystals in proximity to a topological quantum phase transition present gigantic magnetochiral anisotropy, which is the largest ever observed to date. We argue that a very low carrier density, inhomogeneities, and a torus-shaped Fermi surface induced by breaking of inversion symmetry in a Dirac material are central to explain this extraordinary property.
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Submitted 6 April, 2022; v1 submitted 6 November, 2020;
originally announced November 2020.
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Skyrmion and Tetarton Lattices in Twisted Bilayer Graphene
Authors:
Thomas Bömerich,
Lukas Heinen,
Achim Rosch
Abstract:
Recent experiments on twisted bilayer graphene show an anomalous quantum Hall (AQH) effect at filling of $3$ electrons per moirè unit cell. The AQH effect arises in an insulating state with both valley- and ferromagnetic order. We argue, that weak do** of such a system leads to the formation of a novel topological spin texture, a `double-tetarton lattice'. The building block of this lattice, the…
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Recent experiments on twisted bilayer graphene show an anomalous quantum Hall (AQH) effect at filling of $3$ electrons per moirè unit cell. The AQH effect arises in an insulating state with both valley- and ferromagnetic order. We argue, that weak do** of such a system leads to the formation of a novel topological spin texture, a `double-tetarton lattice'. The building block of this lattice, the `double-tetarton', is a spin configuration which covers $1/4$ of the unit-sphere twice. In contrast to skyrmion lattices, the net magnetization of this magnetic texture vanishes. Only at large magnetic fields more conventional skyrmion lattices are recovered. But even for large fields the addition of a single charge to the ferromagnetic AQH state flips hundreds of spins. Our analysis is based on the investigation of an effective non-linear sigma model which includes the effects of long-ranged Coulomb interactions.
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Submitted 26 August, 2020; v1 submitted 28 April, 2020;
originally announced April 2020.
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Length scale of puddle formation in compensation-doped semiconductors and topological insulators
Authors:
Thomas Bömerich,
Jonathan Lux,
Qingyufei Terenz Feng,
Achim Rosch
Abstract:
In most semiconductors and insulators the presence of a small density of charged impurities cannot be avoided, but their effect can be reduced by compensation do**, i.e. by introducing defects of opposite charge. Screening in such a system leads to the formation of electron-hole puddles, which dominate bulk transport, as first recognized by Efros and Shklovskii. Metallic surface states of topolo…
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In most semiconductors and insulators the presence of a small density of charged impurities cannot be avoided, but their effect can be reduced by compensation do**, i.e. by introducing defects of opposite charge. Screening in such a system leads to the formation of electron-hole puddles, which dominate bulk transport, as first recognized by Efros and Shklovskii. Metallic surface states of topological insulators (TI) contribute extra screening channels, suppressing puddles. We investigate the typical length $l_p$, which determines the distance between puddles and the suppression of puddle formation close to metallic surfaces in the limit where the gap $Δ$ is much larger than the typical Coulomb energy $E_c$ of neighboring dopants, $Δ\gg E_c$. In particular, this is relevant for three dimensional Bi-based topological insulators, where $Δ/E_c \sim 100$. Scaling arguments predict $l_p \sim (Δ/E_c)^2$. In contrast, we find numerically that $l_p$ is much smaller and grows in an extended crossover regime approximately linearly with $Δ/E_c$ for numerically accessible values, $Δ/E_c \lesssim 35$. We show how a quantitative scaling argument can be used to extrapolate to larger $Δ/E_c$, where $l_p \sim (Δ/E_c)^2/\ln(Δ/E_c)$. Our results can be used to predict a characteristic thickness of TI thin films, below which the sample quality is strongly enhanced.
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Submitted 24 July, 2017; v1 submitted 30 March, 2017;
originally announced March 2017.
