Identifying structure-absorption relationships and predicting absorption strength of non-fullerene acceptors for organic photovoltaics
Authors:
Jun Yan,
Xabier Rodriguez-Martinez,
Drew Pearce,
Hana Douglas,
Danai Bili,
Mohammed Azzouzi,
Flurin Eisner,
Alise Virbule,
Elham Rezasoltani,
Valentina Belova,
Bernhard Dorling,
Sheridan Few,
Anna A. Szumska,
Xueyan Hou,
Guichuan Zhang,
Hin-Lap Yip,
Mariano Campoy-Quiles,
Jenny Nelson
Abstract:
Non-fullerene acceptors (NFAs) are excellent light harvesters, yet the origin of such high optical extinction is not well understood. In this work, we investigate the absorption strength of NFAs by building a database of time-dependent density functional theory (TDDFT) calculations of ~500 pi-conjugated molecules. The calculations are first validated by comparison with experimental measurements on…
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Non-fullerene acceptors (NFAs) are excellent light harvesters, yet the origin of such high optical extinction is not well understood. In this work, we investigate the absorption strength of NFAs by building a database of time-dependent density functional theory (TDDFT) calculations of ~500 pi-conjugated molecules. The calculations are first validated by comparison with experimental measurements on liquid and solid state using common fullerene and non-fullerene acceptors. We find that the molar extinction coefficient (ε_(d,max)) shows reasonable agreement between calculation in vacuum and experiment for molecules in solution, highlighting the effectiveness of TDDFT for predicting optical properties of organic pi-conjugated molecules. We then perform a statistical analysis based on molecular descriptors to identify which features are important in defining the absorption strength. This allows us to identify structural features that are correlated with high absorption strength in NFAs and could be used to guide molecular design: highly absorbing NFAs should possess a planar, linear, and fully conjugated molecular backbone with highly polarisable heteroatoms. We then exploit a random decision forest to draw predictions for ε_(d,max) using a computational framework based on extended tight-binding Hamiltonians, which shows reasonable predicting accuracy with lower computational cost than TDDFT. This work provides a general understanding of the relationship between molecular structure and absorption strength in pi-conjugated organic molecules, including NFAs, while introducing predictive machine-learning models of low computational cost.
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Submitted 18 March, 2022;
originally announced March 2022.
Driftfusion: An open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one-dimension
Authors:
Philip Calado,
Ilario Gelmetti,
Benjamin Hilton,
Mohammed Azzouzi,
Jenny Nelson,
Piers R. F. Barnes
Abstract:
The recent emergence of lead-halide perovskites as active layer materials for thin film semiconductor devices including solar cells, light emitting diodes, and memristors has motivated the development of several new drift-diffusion models that include the effects of both mobile electronic and ionic charge carriers. The aim of this work is to provide a comprehensive guide to Driftfusion, a versatil…
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The recent emergence of lead-halide perovskites as active layer materials for thin film semiconductor devices including solar cells, light emitting diodes, and memristors has motivated the development of several new drift-diffusion models that include the effects of both mobile electronic and ionic charge carriers. The aim of this work is to provide a comprehensive guide to Driftfusion, a versatile simulation tool built for simulating one-dimensional ordered semiconductor devices with mixed ionic-electronic conducting layers. Driftfusion enables users to model devices with multiple, distinct, material layers and up to four charge carrier species: electrons and holes by default plus up to two ionic species. The time-dependent carrier continuity equations are fully-coupled to Poisson's equation enabling transient optoelectronic device measurement protocols to be simulated. In addition to material and device-wide properties, users have direct access to adapt the physical models for carrier transport, generation and recombination. Furthermore, a graded-interface approach circumvents the requirement for boundary conditions at material interfaces and enables interface-specific properties, such as high rates of interfacial recombination, to be introduced.
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Submitted 5 January, 2022; v1 submitted 9 September, 2020;
originally announced September 2020.
