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Simple linear response model for predicting energy band alignment of two-dimensional vertical heterostructure
Authors:
Javad G. Azadani,
Seungjun Lee,
Hyeong-Ryul Kim,
Hussain Alsalman,
Young-Kyun Kwon,
Jerry Tersoff,
Tony Low
Abstract:
The Anderson and midgap models are often used in the study of semiconductor heterojunctions, but for van der Waals (vdW) vertical heterostructures they have shown only very limited success. Using the group-IV monochalcogenide vertical heterostructures as a prototypical system, we propose a linear response model and compare the effectiveness of these models in predicting density functional theory (…
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The Anderson and midgap models are often used in the study of semiconductor heterojunctions, but for van der Waals (vdW) vertical heterostructures they have shown only very limited success. Using the group-IV monochalcogenide vertical heterostructures as a prototypical system, we propose a linear response model and compare the effectiveness of these models in predicting density functional theory (DFT) band alignments, band types and bandgaps. We show that the DFT band alignment is best predicted by the linear response model, which falls in between the Anderson and midgap models. Our proposed model can be characterized by an interface dipole $α\times(E_{m2}-E_{m1})$, where the linear response coefficient $α$ = 0 and 1 corresponds to the Anderson and midgap model respectively, and $E_{m}$ is the midgap energy of the monolayer, which can be viewed as an effective electronegativity. For group-IV monochalcogenides, we show that $α$ = 0.34 best captures the DFT band alignment of the vdW heterostructure, and we discuss the viability of the linear response model considering other effects such as strains and band hybridization, and conclude with an application of the model to predict experimental band alignments.
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Submitted 7 November, 2020;
originally announced November 2020.
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Ferromagnetic phase of spinel compound MgV$_2$O$_4$ and its spintronics properties
Authors:
Javad G. Azadani,
Wei Jiang,
Jian-** Wang,
Tony Low
Abstract:
Spinel compound, MgV$_2$O$_4$, known as a highly frustrated magnet has been extensively studied both experimentally and theoretically for its exotic quantum magnetic states. However, due to its intrinsic insulating nature in its antiferromagnetic (AFM) ground state, its realistic applications in spintronics are quite limited. Here, based on first-principles calculations, we examine the ferromagnet…
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Spinel compound, MgV$_2$O$_4$, known as a highly frustrated magnet has been extensively studied both experimentally and theoretically for its exotic quantum magnetic states. However, due to its intrinsic insulating nature in its antiferromagnetic (AFM) ground state, its realistic applications in spintronics are quite limited. Here, based on first-principles calculations, we examine the ferromagnetic (FM) phase of MgV$_2$O$_4$, which was found to host three-dimensional flat band (FB) right near the Fermi level, consequently yielding a large anomalous Hall effect (AHE, $σ\approx 670\,Ω^{-1}\cdot cm^{-1}$). Our calculations suggest that the half-metallicity feature of MgV$_2$O$_4$ is preserved even after interfacing with MgO due to the excellent lattice matching, which could be a promising spin filtering material for spintronics applications. Lastly, we explore experimental feasibility of stabilizing this FM phase through strain and do** engineering. Our study suggests that experimentally accessible amount of hole do** might induce a AFM-FM phase transition.
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Submitted 22 September, 2020;
originally announced September 2020.
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Strain-Engineered High Responsivity MoTe2 Photodetector for Silicon Photonic Integrated Circuits
Authors:
R. Maiti,
C. Patil,
T. Xie,
J. G. Azadani,
M. A. S. R. Saadi,
R. Amin,
M. Miscuglio,
D. Van Thourhout,
S. D. Solares,
T. Low,
R. Agarwal,
S. Bank,
V. J. Sorger
Abstract:
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically-relevant properties leading to strong light-matter-interaction devices due to effects such as reduced coulomb screening or exci…
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In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically-relevant properties leading to strong light-matter-interaction devices due to effects such as reduced coulomb screening or excitonic states. However, no efficient photodetector in the telecommunication C-band using 2D materials has been realized yet. Here, we demonstrate a MoTe2-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W) operating at 1550nm on silicon photonic waveguide enabled by engineering the strain (4%) inside the photo-absorbing transition-metal-dichalcogenide film. We show that an induced tensile strain of ~4% reduces the bandgap of MoTe2 by about 0.2 eV by microscopically measuring the work-function across the device. Unlike Graphene-based photodetectors relying on a gapless band structure, this semiconductor-2D material detector shows a ~100X improved dark current enabling an efficient noise-equivalent power of just 90 pW/Hz^0.5. Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.
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Submitted 22 December, 2019; v1 submitted 31 October, 2019;
originally announced December 2019.
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Large-scale defects hidden inside a topological insulator grown onto a 2D substrate
Authors:
Danielle Reifsnyder Hickey,
Ryan J. Wu,
Joon Sue Lee,
Javad G. Azadani,
Roberto Grassi,
Mahendra DC,
Jian-** Wang,
Tony Low,
Nitin Samarth,
K. Andre Mkhoyan
Abstract:
Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-consumption switching of magnetization. Specifically, the family of bismuth chalcogenides offers efficient spin-to-charge conversion because of its large spin-orbit coupling and spin-momentum locking of surface states. Howev…
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Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-consumption switching of magnetization. Specifically, the family of bismuth chalcogenides offers efficient spin-to-charge conversion because of its large spin-orbit coupling and spin-momentum locking of surface states. However, a major obstacle to realizing the promise of TIs is the thin-film materials' quality, which lags behind that of epitaxially grown semiconductors. In contrast to the latter systems, the Bi-chalcogenides form by van der Waals epitaxy, which allows them to successfully grow onto substrates with various degrees of lattice mismatch. This flexibility enables the integration of TIs into heterostructures with emerging materials, including two-dimensional materials. However, understanding and controlling local features and defects within the TI films is critical to achieving breakthrough device performance. Here, we report observations and modeling of large-scale structural defects in (Bi,Sb)$_2$Te$_3$ films grown onto hexagonal BN, highlighting unexpected symmetry-breaking rotations within the films and the coexistence of a second phase along grain boundaries. Using first-principles calculations, we show that these defects could have consequential impacts on the devices that rely on these TI films, and therefore they cannot be ignored.
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Submitted 10 August, 2018;
originally announced August 2018.
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Tin monochalcogenide heterostructures as mechanically rigid infrared bandgap semiconductors
Authors:
V. Ongun Özçelik,
Mohammad Fathi,
Javad G. Azadani,
Tony Low
Abstract:
Based on first-principles density functional calculations, we show that SnS and SnSe layers can form mechanically rigid heterostructures with the constituent puckered or buckled monolayers. Due to the strong interlayer coupling, the electronic wavefunctions of the conduction and valence band edges are delocalized across the heterostructure. The resultant bandgap of the heterostructures reside in t…
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Based on first-principles density functional calculations, we show that SnS and SnSe layers can form mechanically rigid heterostructures with the constituent puckered or buckled monolayers. Due to the strong interlayer coupling, the electronic wavefunctions of the conduction and valence band edges are delocalized across the heterostructure. The resultant bandgap of the heterostructures reside in the infrared region. With strain engineering, the heterostructure bandgap undergoes transition from indirect to direct in the puckered phase. Our results show that there is a direct correlation between the electronic wavefunction and the mechanical rigidity of the layered heterostructure.
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Submitted 27 March, 2018;
originally announced March 2018.
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Electrical control of inter-layer excitons in van der Waals heterostructures
Authors:
A. Chaves,
J. G. Azadani,
V. Ongun Özçelik,
R. Grassi,
T. Low
Abstract:
We investigate excitons in stacked transition metal dichalcogenide (TMDC) layers under perpendicularly applied electric field, herein MoSe$_2$/WSe$_2$ van der Waals heterostructures. Band structures are obtained with density functional theory calculations, along with the electron and hole wave functions in conduction and valence bands, respectively. Although the type-II nature of the heterostructu…
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We investigate excitons in stacked transition metal dichalcogenide (TMDC) layers under perpendicularly applied electric field, herein MoSe$_2$/WSe$_2$ van der Waals heterostructures. Band structures are obtained with density functional theory calculations, along with the electron and hole wave functions in conduction and valence bands, respectively. Although the type-II nature of the heterostructure leads to fully charge separated inter-layer excitons, charge carriers distribution among the layers is shown to be easily tunable by external field. Our results show that moderate values of electric field produce more evenly distributed wave functions along the heterostructure, thus enhancing both the inter-layer exciton binding energy and, most notably, its oscillator strength.
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Submitted 25 September, 2017;
originally announced September 2017.
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Band Alignment of 2D Semiconductors for Designing Heterostructures with Momentum Space Matching
Authors:
V. Ongun Özçelik,
Javad G. Azadani,
Ce Yang,
Steven J. Koester,
Tony Low
Abstract:
We present a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II and III heterojunctions; an enticing possibility being atomic heterostructures where the constituent monolayers have band edges at the zone center. Our study, which includes the Group IV and III-V compound monolayer material…
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We present a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II and III heterojunctions; an enticing possibility being atomic heterostructures where the constituent monolayers have band edges at the zone center. Our study, which includes the Group IV and III-V compound monolayer materials, Group V elemental monolayer materials, transition metal dichalcogenides (TMD) and transition metal trichalcogenides (TMT) reveals that almost half of these materials have conduction and/or valence band edges residing at the zone center. Using first-principles density functional calculations, we present the type of the heterojunction for 903 different possible combination of these 2D materials which establishes a periodic table of heterojunctions.
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Submitted 23 March, 2016; v1 submitted 8 March, 2016;
originally announced March 2016.
