-
Phonon and Thermal Properties of Quasi-Two-Dimensional FePS3 and MnPS3 Antiferromagnetic Semiconductor Materials
Authors:
Fariborz Kargar,
Ece Aytan,
Subhajit Ghosh,
Jonathan Lee,
Michael Gomez,
Yuhang Liu,
Andres Sanchez Magana,
Zahra Barani Beiranvand,
Bishwajit Debnath,
Richard Wilson,
Roger K. Lake,
Alexander A. Balandin
Abstract:
We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. The Raman spectroscopy was conducted using three different excitation lasers with the wavelengths of 325 nm (UV), 488 nm (blue), and 633 nm (red). The resonant UV-Raman spectroscopy reveals new spectral features, which are n…
▽ More
We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. The Raman spectroscopy was conducted using three different excitation lasers with the wavelengths of 325 nm (UV), 488 nm (blue), and 633 nm (red). The resonant UV-Raman spectroscopy reveals new spectral features, which are not detectable via visible Raman light scattering. The thermal conductivity of FePS3 and MnPS3 thin films was measured by two different techniques: the steady-state Raman optothermal and transient time-resolved magneto-optical Kerr effect. The Raman optothermal measurements provided the orientation-average thermal conductivity of FePS3 to be 1.35 W/mK at room temperature. The transient measurements revealed that the through-plane and in-plane thermal conductivity of FePS3 is 0.85 W/mK and 2.7 W/mK, respectively. The films of MnPS3 have higher thermal conductivity of 1.1 W/mK through-plane and 6.3 W/mK in-plane. The data obtained by both techniques reveal strong thermal anisotropy of the films and the dominant contribution of phonons to heat conduction. Our results are important for the proposed applications of the antiferromagnetic semiconductor thin films in spintronic devices.
△ Less
Submitted 14 August, 2019;
originally announced August 2019.
-
Strain controlled superconductivity in few-layer NbSe2
Authors:
Cliff Chen,
Protik Das,
Ece Aytan,
Weimin Zhou,
Justin Horowitz,
Biswarup Satpati,
Alexander A. Balandin,
Roger K. Lake,
Peng Wei
Abstract:
The controlled tunability of superconductivity in low-dimensional materials may enable new quantum devices. Particularly in triplet or topological superconductors, tunneling devices such as Josephson junctions etc. can demonstrate exotic functionalities. The tunnel barrier, an insulating or normal material layer separating two superconductors, is a key component for the junctions. Thin layers of N…
▽ More
The controlled tunability of superconductivity in low-dimensional materials may enable new quantum devices. Particularly in triplet or topological superconductors, tunneling devices such as Josephson junctions etc. can demonstrate exotic functionalities. The tunnel barrier, an insulating or normal material layer separating two superconductors, is a key component for the junctions. Thin layers of NbSe2 have been shown as a superconductor with strong spin orbit coupling, which can give rise to topological superconductivity if driven by a large magnetic exchange field. Here we demonstrate the superconductor-insulator transitions in epitaxially grown few-layer NbSe2 with wafer-scale uniformity on insulating substrates. We provide the electrical transport, Raman spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction characterizations of the insulating phase. We show that the superconductor-insulator transition is driven by strain, which also causes characteristic energy shifts of the Raman modes. Our observation paves the way for high quality hetero-junction tunnel barriers to be seamlessly built into epitaxial NbSe2 itself, thereby enabling highly scalable tunneling devices for superconductor-based quantum electronics.
△ Less
Submitted 31 July, 2020; v1 submitted 11 July, 2019;
originally announced July 2019.
-
Proton-Irradiation-Immune Electronics Implemented with Two-Dimensional Charge-Density-Wave Devices
Authors:
A. Geremew,
F. Kargar,
E. X. Zhang,
S. E. Zhao,
E. Aytan,
M. A. Bloodgood,
T. T. Salguero,
S. Rumyantsev,
A. Fedoseyev,
D. M. Fleetwood,
A. A. Balandin
Abstract:
Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction. Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic…
▽ More
Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction. Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic protons. Modern electronics based on semiconductors - even those specially designed for radiation hardness - remain highly susceptible to proton damage. Here we demonstrate that room temperature (RT) charge-density-wave (CDW) devices with quasi-two-dimensional (2D) 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 10^14 H+cm^2. Current-voltage I-V characteristics of these 2D CDW devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other 2D devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these "all-metallic" CDW devices can be attributed to their two-terminal design, quasi-2D nature of the active channel, and high concentration of charge carriers in the utilized CDW phases. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments.
△ Less
Submitted 2 January, 2019;
originally announced January 2019.
-
Thermal Percolation Threshold and Thermal Properties of Composites with Graphene and Boron Nitride Fillers
Authors:
Fariborz Kargar,
Zahra Barani,
Jacob S. Lewis,
Bishwajit Debnath,
Ruben Salgado,
Ece Aytan,
Roger Lake,
Alexander A. Balandin
Abstract:
We investigated thermal properties of the epoxy-based composites with a high loading fraction - up to f=45 vol.% - of the randomly oriented electrically conductive graphene fillers and electrically insulating boron nitride fillers. It was found that both types of the composites revealed a distinctive thermal percolation threshold at the loading fraction f>20 vol.%. The graphene loading required fo…
▽ More
We investigated thermal properties of the epoxy-based composites with a high loading fraction - up to f=45 vol.% - of the randomly oriented electrically conductive graphene fillers and electrically insulating boron nitride fillers. It was found that both types of the composites revealed a distinctive thermal percolation threshold at the loading fraction f>20 vol.%. The graphene loading required for achieving the thermal percolation was substantially higher than the loading for the electrical percolation. Graphene fillers outperformed boron nitride fillers in the thermal conductivity enhancement. It was established that thermal transport in composites with the high filler loading, above the thermal percolation threshold, is dominated by heat conduction via the network of percolating fillers. Unexpectedly, we determined that the thermal transport properties of the high loading composites were influenced strongly by the cross-plane thermal conductivity of the quasi-two-dimensional fillers. The obtained results shed light on the debated mechanism of the thermal percolation, and facilitate the development of the next generation of the efficient thermal interface materials for electronic applications.
△ Less
Submitted 10 July, 2018;
originally announced July 2018.
-
Acoustic Phonon Dispersion Engineering in Bulk Crystals via Incorporation of Dopant Atoms
Authors:
Fariborz Kargar,
Elias H. Penilla,
Ece Aytan,
Jacob S. Lewis,
Javier E. Garay,
Alexander A. Balandin
Abstract:
We report results of Brillouin - Mandelstam spectroscopy of transparent alumina crystals with Nd dopants. The ionic radius and atomic mass of Nd atoms are distinctively different from those of the host Al atoms. Our results show that even a small concentration of Nd atoms incorporated into the alumina samples produces a profound change in the acoustic phonon spectrum. The velocity of the transvers…
▽ More
We report results of Brillouin - Mandelstam spectroscopy of transparent alumina crystals with Nd dopants. The ionic radius and atomic mass of Nd atoms are distinctively different from those of the host Al atoms. Our results show that even a small concentration of Nd atoms incorporated into the alumina samples produces a profound change in the acoustic phonon spectrum. The velocity of the transverse acoustic phonons decreases by ~600 m/s at the Nd density of only ~0.1 %. Interestingly, the decrease in the phonon frequency and velocity with the do** concentration is non-monotonic. The obtained results, demonstrating that modification of the acoustic phonon spectrum can be achieved not only by nanostructuring but also by do** have important implications for thermal management as well as thermoelectric and optoelectronic devices.
△ Less
Submitted 23 March, 2018;
originally announced March 2018.
-
Spin - Phonon Coupling in Nickel Oxide Determined from Ultraviolet Raman Spectroscopy
Authors:
E. Aytan,
B. Debnath,
F. Kargar,
Y. Barlas,
M. M. Lacerda,
J. X. Li,
R. K. Lake,
J. Shi,
A. A. Balandin
Abstract:
Nickel oxide (NiO) has been studied extensively for various applications ranging from electrochemistry to solar cells [1,2]. In recent years, NiO attracted much attention as an antiferromagnetic (AF) insulator material for spintronic devices [3-10]. Understanding the spin - phonon coupling in NiO is a key to its functionalization, and enabling AF spintronics' promise of ultra-high-speed and low-po…
▽ More
Nickel oxide (NiO) has been studied extensively for various applications ranging from electrochemistry to solar cells [1,2]. In recent years, NiO attracted much attention as an antiferromagnetic (AF) insulator material for spintronic devices [3-10]. Understanding the spin - phonon coupling in NiO is a key to its functionalization, and enabling AF spintronics' promise of ultra-high-speed and low-power dissipation [11,12]. However, despite its status as an exemplary AF insulator and a benchmark material for the study of correlated electron systems, little is known about the spin - phonon interaction, and the associated energy dissipation channel, in NiO. In addition, there is a long-standing controversy over the large discrepancies between the experimental and theoretical values for the electron, phonon, and magnon energies in NiO [13-23]. This gap in knowledge is explained by NiO optical selection rules, high Neel temperature and dominance of the magnon band in the visible Raman spectrum, which precludes a conventional approach for investigating such interaction. Here we show that by using ultraviolet (UV) Raman spectroscopy one can extract the spin - phonon coupling coefficients in NiO. We established that unlike in other materials, the spins of Ni atoms interact more strongly with the longitudinal optical (LO) phonons than with the transverse optical (TO) phonons, and produce opposite effects on the phonon energies. The peculiarities of the spin - phonon coupling are consistent with the trends given by density functional theory calculations. The obtained results shed light on the nature of the spin - phonon coupling in AF insulators and may help in develo** innovative spintronic devices.
△ Less
Submitted 17 October, 2017;
originally announced October 2017.
-
Inelastic Light Scattering Spectroscopy of Magnons and Phonons in Nickel Oxide: Effects of Temperature
Authors:
M. M. Lacerda,
F. Kargar,
E. Aytan,
R. Samnakay,
B. Debnath,
J. X. Li,
A. Khitun,
R. K. Lake,
J. Shi,
A. A. Balandin
Abstract:
We report results of an investigation of the temperature dependence of the magnon and phonon frequencies in NiO. A combination of Brillouin - Mandelstam and Raman spectroscopies allowed us to elucidate the evolution of the phonon and magnon spectral signatures from the Brillouin zone center (GHz range) to the second-order peaks from the zone boundary (THz range). The temperature-dependent behavior…
▽ More
We report results of an investigation of the temperature dependence of the magnon and phonon frequencies in NiO. A combination of Brillouin - Mandelstam and Raman spectroscopies allowed us to elucidate the evolution of the phonon and magnon spectral signatures from the Brillouin zone center (GHz range) to the second-order peaks from the zone boundary (THz range). The temperature-dependent behavior of the magnon and phonon bands in the NiO spectrum indicates the presence of antiferromagnetic (AF) order fluctuation or a persistent AF state at temperatures above the Neel temperature (T=523 K). Tuning the intensity of the excitation laser provides a method for disentangling the features of magnons from acoustic phonons without the application of a magnetic field. Our results are useful for interpretation of the inelastic-light scattering spectrum of NiO, and add to the knowledge of its magnon properties important for THz spintronic devices.
△ Less
Submitted 14 February, 2017;
originally announced February 2017.
-
Breakdown Current Density in BN-Capped Quasi-1D TaSe3 Metallic Nanowires: Prospects of Interconnect Applications
Authors:
Maxim A. Stolyarov,
Guanxiong Liu,
Matthew A. Bloodgood,
Ece Aytan,
Chenglong Jiang,
Rameez Samnakay,
Tina T. Salguero,
Denis L. Nika,
Krassimir N. Bozhilov,
Alexander A. Balandin
Abstract:
We report results of investigation of the current-carrying capacity of nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate mm-long TaSe3 wires with lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that TaS…
▽ More
We report results of investigation of the current-carrying capacity of nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate mm-long TaSe3 wires with lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that TaSe3/h-BN nanowire heterostructures have a breakdown current density exceeding 10 MA/cm2 - an order-of-magnitude higher than that in copper. Some devices exhibited an intriguing step-like breakdown, which can be explained by the atomic thread bundle structure of the nanowires. The quasi-1D single crystal nature of TaSe3 results in low surface roughness and the absence of grain boundaries; these features potentially can enable the downscaling of these wires to lateral dimensions in the few-nm range. These results suggest that quasi-1D van der Waals metals have potential for applications in the ultimately downscaled local interconnects.
△ Less
Submitted 11 April, 2016;
originally announced April 2016.
