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The optical absorption in indirect semiconductor to semimetal PtSe2 arises from direct transitions
Authors:
Marin Tharrault,
Sabrine Ayari,
Eva Desgué,
Mehdi Arfaoui,
Romaric Le Goff,
Pascal Morfin,
José Palomo,
Michael Rosticher,
Sihem Jaziri,
Bernard Plaçais,
Pierre Legagneux,
Francesca Carosella,
Christophe Voisin,
Robson Ferreira,
Emmanuel Baudin
Abstract:
$\rm{PtSe_2}$ is a van der Waals material transiting from an indirect semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between wideband optical absorption ($0.8 - 3.0\,\rm{eV}$) of high-quality exfoliated crystals and ab-initio simulations, we prove instead that the opt…
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$\rm{PtSe_2}$ is a van der Waals material transiting from an indirect semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between wideband optical absorption ($0.8 - 3.0\,\rm{eV}$) of high-quality exfoliated crystals and ab-initio simulations, we prove instead that the optical absorption arises only from direct transitions. This understanding allows us to shed new light on the semiconductor to semimetal transition and to explore the effect of stacking and excitons on optical absorption.
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Submitted 17 November, 2023; v1 submitted 3 November, 2023;
originally announced November 2023.
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Optical properties of orthorhombic germanium sulfide: Unveiling the Anisotropic Nature of Wannier Exciton
Authors:
Mehdi Arfaoui,
Natalia Zawadzka,
Sabrine Ayari,
Zhaolong Chen,
Kenji Watanabe,
Takashi Taniguchi,
Adam Babiński,
Maciej Koperski,
Sihem Jaziri,
Maciej R. Molas
Abstract:
To fully explore exciton-based applications and improve their performance, it is essential to understand the exciton behavior in anisotropic materials. Here, we investigate the optical properties of anisotropic excitons in GeS encapsulated by h-BN, using different approaches that combine polarization- and temperature-dependent photoluminescence (PL) measurements, \textit{ab initio} calculations, a…
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To fully explore exciton-based applications and improve their performance, it is essential to understand the exciton behavior in anisotropic materials. Here, we investigate the optical properties of anisotropic excitons in GeS encapsulated by h-BN, using different approaches that combine polarization- and temperature-dependent photoluminescence (PL) measurements, \textit{ab initio} calculations, and effective mass approximation (EMA). Using the Bethe-Salpeter Equation (BSE) method, we found that the optical absorption spectra in GeS are significantly affected by the Coulomb interaction included in the BSE method, which shows the importance of excitonic effects besides it exhibits a significant dependence on the direction of polarization, revealing the anisotropic nature of bulk GeS. Combining \textit{ab initio} calculations and EMA methods, we investigate the quasi-hydrogenic exciton states and oscillator strength (OS) of GeS along the zigzag and armchair axes. We found that the anisotropy induces lifting of the degeneracy and mixing of the excitonic states in GeS, which results in highly nonhydrogenic features. Very good agreement with the experiment is observed.
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Submitted 29 April, 2023;
originally announced May 2023.
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Atomic Layer-controlled Nonlinear Terahertz Valleytronics in Dirac Semi-metal and Semiconductor PtSe2
Authors:
Minoosh Hemmat,
Sabrine Ayari,
Martin Micica,
Hadrien Vergnet,
Guo Shasha,
Mehdi Arfaoui,
Xuechao Yu,
Daniel Vala,
Adrien Wright,
Kamil Postava,
Juliette Mangeney,
Francesca Carosella,
Sihem Jaziri,
Qi Jie Wang,
Liu Zheng,
Jerome Tignon,
Robson Ferreira,
Emmanuel Baudin,
Sukhdeep Dhillon
Abstract:
Platinum diselenide (PtSe2) is a promising two-dimensional (2D) material for the terahertz (THz) range as, unlike other transition metal dichalcogenides (TMDs), its bandgap can be uniquely tuned from a semiconductor in the near-infrared to a semimetal with the number of atomic layers. This gives the material unique THz photonic properties that can be layer-engineered. Here, we demonstrate that a c…
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Platinum diselenide (PtSe2) is a promising two-dimensional (2D) material for the terahertz (THz) range as, unlike other transition metal dichalcogenides (TMDs), its bandgap can be uniquely tuned from a semiconductor in the near-infrared to a semimetal with the number of atomic layers. This gives the material unique THz photonic properties that can be layer-engineered. Here, we demonstrate that a controlled THz nonlinearity - tuned from monolayer to bulk PtSe2 - can be realised in wafer size polycrystalline PtSe2 through the generation of ultrafast photocurrents and the engineering of the bandstructure valleys. This is combined with the PtSe2 layer interaction with the substrate for a broken material centro-symmetry permitting a second order nonlinearity. Further, we show layer-dependent circular dichroism, where the sign of the ultrafast currents and hence the phase of the emitted THz pulse can be controlled through the excitation of different bandstructure valleys. In particular, we show that a semimetal has a strong dichroism that is absent in the monolayer and few layer semiconducting limit. The microscopic origins of this TMD bandstructure engineering is highlighted through detailed DFT simulations and show that circular dichroism can be controlled when PtSe2 becomes a semimetal and when the K-valleys can be excited. As well as showing that PtSe2 is a promising material for THz generation through layer controlled optical nonlinearities, this work opens up new class of circular dichroism materials beyond the monolayer limit that has been the case of traditional TMDs, and impacting a range of domains from THz valleytronics, THz spintronics to harmonic generation.
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Submitted 4 April, 2023;
originally announced April 2023.
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Manipulating single photon emitter radiative lifetime in transition-metal dichalcogenides through Forster resonance energy transfer to graphene
Authors:
R. Eddhib,
S. Ayari,
A. Hichri,
S. Jaziri
Abstract:
Structural defects can crucially impact the optical response of monolayer (ML) thick materials as they enable trap** sites for excitons. These trapped excitons appear in photoluminescence spectra as new emissions below the free bright exciton and it can be exploited for single photon emissions (SPE). In this work we outline criteria, within our frame work, by which single photon emission can be…
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Structural defects can crucially impact the optical response of monolayer (ML) thick materials as they enable trap** sites for excitons. These trapped excitons appear in photoluminescence spectra as new emissions below the free bright exciton and it can be exploited for single photon emissions (SPE). In this work we outline criteria, within our frame work, by which single photon emission can be detected in two dimensional materials and we explore how these criteria can be fulfilled in atomically thin transition metal dichalcogenides (TMD). In particular, we model the effect of defects, in accordance with the most common experimental realisations, on the spatial autocorrelation function of the random disorder potential. Moreover, we provide a way to control the radiative lifetime of these emissions by a hybride heterostructrue of the ML TMD with a graphene sheet and a dielectric spacer that enables the Forster resonance energy transfer process. Our work predict that the corresponding SPE quenched radiative lifetime will be in the picosecond range, this time scale is in good agreement with the recently measured exciton lifetime in this heterostructures
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Submitted 9 May, 2021;
originally announced May 2021.
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Phonon-assisted exciton and trion conversion efficiency in transition metal Dichalcogenides
Authors:
Sabrine Ayari,
Sihem Jaziri,
Robson Ferreira,
Gerald Bastard
Abstract:
Photoluminescence spectra, shows that monolayer Transition-metal dichalcogenides (MLTMDCs), possess charged exciton binding energies, conspicuously similar to the energy of optical phonons. This enigmatic coincidence has offered opportunities to investigate many-body interactions between trion, exciton and phonon and led to efficient excitonic anti-Stokes processes with the potential for laser ref…
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Photoluminescence spectra, shows that monolayer Transition-metal dichalcogenides (MLTMDCs), possess charged exciton binding energies, conspicuously similar to the energy of optical phonons. This enigmatic coincidence has offered opportunities to investigate many-body interactions between trion, exciton and phonon and led to efficient excitonic anti-Stokes processes with the potential for laser refrigeration and energy harvesting. In this study, we show that in WSe2 materials, the trion binding energy matches two phonon modes, the outofplane HP and the in-plane LO mode. In this respect, using the Fermi golden rule together with the effective mass approximation, we investigate the rate of the population transfers between exciton and trion, mediated by a single phonon. We demonstrate that, while the absolute importance of the two phonon modes on the upconversion process strongly depend on the experimental conditions such as the temperature and the dielectric environment (substrate), both modes lead to an up-conversion process on time scales in the range of few picoseconds to sub-nanosecond, consistent with recents experimental findings. The conjugate process is also investigated in our study, as a function of temperature and electron density . We prove that exciton to trion down-conversion process is very unlikely at low electron density and high temperature while it increases dramatically to reach few picoseconds time scale at low temperature and for electron density . Finally, our results show that conversion process occurs more rapidly in exemplary monolayer molybdenum-based dichalcogenides (MoSe2 and MoTe2) than tungsten dichalcogenides .
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Submitted 12 May, 2020;
originally announced May 2020.
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Radiative lifetime of localized excitons in transition metal dichalcogenides
Authors:
Sabrine Ayari,
Adlen Smiri,
Aida Hichri,
Sihem Jaziri,
Thierry Amand
Abstract:
Disorder derived from defects or strain in monolayer TMDs can lead to a dramatic change in the physical behavior of the interband excitations, producing inhomogeneous spectral broadening and localization; leading to radiative lifetime increase. In this study, we have modeled the disorder in the surface of the sample through a randomized potential in monolayer WSe2. We show that this model allows u…
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Disorder derived from defects or strain in monolayer TMDs can lead to a dramatic change in the physical behavior of the interband excitations, producing inhomogeneous spectral broadening and localization; leading to radiative lifetime increase. In this study, we have modeled the disorder in the surface of the sample through a randomized potential in monolayer WSe2. We show that this model allows us to simulate the spectra of localized exciton states as well as their radiative lifetime. In this context, we give an in depth study of the influence of the disorder potential parameters on the optical properties of these defects through energies, density of states, oscillator strengths, photoluminescence (PL) spectroscopy and radiative lifetime at low temperature (4K). We demonstrate that localized excitons have a longer emission time than free excitons, in the range of tens of picoseconds or more, and we show that it depends strongly on the disorder parameter and dielectric environment. Finally, in order to prove the validity of our model we compare it to available experimental results of the literature.
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Submitted 14 March, 2018;
originally announced March 2018.
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Exciton, trion and localized exciton in monolayer Tungsten Disulfide
Authors:
Aïda Hichri,
Imen Ben Amara,
Sabrine Ayari,
Sihem Jaziri
Abstract:
The ultrathin transition metal dichalcogenides (TMDs) have emerged as promising materials for various applications using two dimensional (2D) semiconductors. They have attracted increasing attention due to their unique optical properties originate from neutral and charged excitons. Here, we report negatively charged exciton formation in monolayer TMDs, notably tungsten disulfide WS2. Our theory is…
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The ultrathin transition metal dichalcogenides (TMDs) have emerged as promising materials for various applications using two dimensional (2D) semiconductors. They have attracted increasing attention due to their unique optical properties originate from neutral and charged excitons. Here, we report negatively charged exciton formation in monolayer TMDs, notably tungsten disulfide WS2. Our theory is based on an effective mass model of neutral and charged excitons, parameterized by ab-initio calculations. Taking into the account the strong correlation between the monolayer WS2 and the surrounding dielectric environment, our theoretical results are in good agreement with one-photon photoluminescence (PL) and reflectivity measurements. We also show that the exciton state with p-symmetry, experimentally observed by two-photon PL emission, is energetically below the 2s-state. We use the equilibrium mass action law, to quantify the relative weight of exciton and trion PL. We show that exciton and trion emission can be tuned and controlled by external parameters like temperature, pum** and injection electrons. Finally, in comparison with experimental measurements, we show that exciton emission in monolayer tungsten dichalcogenides is substantially reduced. This feature suggests that free exciton can be trapped in disordered potential wells to form a localized exciton and therefore offers a route toward novel optical properties.
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Submitted 19 September, 2016;
originally announced September 2016.
