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Optical orientation of excitons in hybrid metal-semiconductor nanostructures
Authors:
A. V. Korotchenkov,
N. S. Averkiev
Abstract:
We demonstrate the possibility of the optical orientation of excitons in the near field of the metal grating that covers a semiconductor nanostructure. Excitons generated this way have the wave vector greater than the wave vector of the incident radiation. We suggest that optical orientation method is applicable to study the fine structure and kinetics of the hot excitons in semiconductor quantum…
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We demonstrate the possibility of the optical orientation of excitons in the near field of the metal grating that covers a semiconductor nanostructure. Excitons generated this way have the wave vector greater than the wave vector of the incident radiation. We suggest that optical orientation method is applicable to study the fine structure and kinetics of the hot excitons in semiconductor quantum well.
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Submitted 5 December, 2023; v1 submitted 21 November, 2023;
originally announced November 2023.
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Emergent equilibrium and quantum criticality in a two-photon dissipative oscillator
Authors:
V. Yu. Mylnikov,
S. O. Potashin,
G. S. Sokolovskii,
N. S. Averkiev
Abstract:
We study the dissipative phase transition in a quantum oscillator with two-photon drive and two-photon dissipation. Using the semi-classical Langevin equation and the Fokker-Plank approach, we construct a theory of non-perturbative quantum fluctuations and go beyond the semi-classical approximation. We demonstrate the map** of a two-photon quantum dissipative oscillator onto a classical equilibr…
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We study the dissipative phase transition in a quantum oscillator with two-photon drive and two-photon dissipation. Using the semi-classical Langevin equation and the Fokker-Plank approach, we construct a theory of non-perturbative quantum fluctuations and go beyond the semi-classical approximation. We demonstrate the map** of a two-photon quantum dissipative oscillator onto a classical equilibrium model of a nonlinear classical oscillator in a colored-noise environment. Then, we justify the applicability of the Landau theory for a given dissipative phase transition. To do that, we explicitly demonstrate the Boltzmann-like form of stationary distribution function depending on the effective temperature, which is determined by the frequency detuning and the rates of two-photon drive and dissipation. In addition, we provide a description of the quantum critical region and obtain critical exponents that appear to be in very good agreement with numerical simulations.
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Submitted 1 November, 2023;
originally announced November 2023.
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Phase diagram of a ferromagnetic semiconductor. The origin of superparamagnetism
Authors:
N. A. Bogoslovskiy,
P. V. Petrov,
N. S. Averkiev
Abstract:
We study the theoretical model of a ferromagnetic semiconductor as a system of randomly distributed Ising spins with a long-range exchange interaction. Using the density-of-states approach, we analytically obtain the magnetic susceptibility and heat capacity over a wide range of temperatures and magnetic fields. It is shown that the finite system of spins in magnetic field less than a certain crit…
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We study the theoretical model of a ferromagnetic semiconductor as a system of randomly distributed Ising spins with a long-range exchange interaction. Using the density-of-states approach, we analytically obtain the magnetic susceptibility and heat capacity over a wide range of temperatures and magnetic fields. It is shown that the finite system of spins in magnetic field less than a certain critical field is in a superparamagnetic state due to thermodynamic fluctuations. The complex phase structure of a ferromagnetic semiconductor is discussed.
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Submitted 14 December, 2023; v1 submitted 31 July, 2023;
originally announced July 2023.
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Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure
Authors:
Igor V. Rozhansky,
Ina V. Kalitukha,
Grigorii S. Dimitriev,
Olga S. Ken,
Mikhail V. Dorokhin,
Boris N. Zvonkov,
Dmitri S. Arteev,
Nikita S. Averkiev,
Vladimir L. Korenev
Abstract:
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few nanometer thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurement…
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Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few nanometer thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurements and photoluminescence detection provides a powerful tool for studying the properties of such hybrid structures and allows to resolve the dynamic FM proximity effect on a nanometer scale. The method can be generalized on various systems including rapidly develo** 2D van der Waals materials.
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Submitted 17 April, 2023;
originally announced April 2023.
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Exchange interaction for Mn acceptor in GaAs: revealing its strong deformation dependence
Authors:
I. V. Krainov,
K. A. Baryshnikov,
A. A. Karpova,
N. S. Averkiev
Abstract:
In this paper we calculate exchange interaction constant between manganese ion inner electronic $d$-shell and GaAs valence band bounded hole using their microscopic multiparticle wave functions. We reveal its parametric dependence on crystal lattice deformations and find out that it could be about and even more than dozens percent when the strain tensor reaches values of $10^{-3} ÷10^{-2}$. This f…
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In this paper we calculate exchange interaction constant between manganese ion inner electronic $d$-shell and GaAs valence band bounded hole using their microscopic multiparticle wave functions. We reveal its parametric dependence on crystal lattice deformations and find out that it could be about and even more than dozens percent when the strain tensor reaches values of $10^{-3} ÷10^{-2}$. This fact is in accordance with the previous hypothesis of deformation dependence of Mn acceptors in GaAs fine energy structure obtained from Raman spectroscopy, and we show that this dependence has the same magnitude. Also, we resolve here the problem of a substantial high temperature mismatch between well-developed theory and experimental data for the static magnetic susceptibility of Mn ions in GaAs. We show by numerical estimates and calculations that quite a strong parametric dependence of the exchange coupling value on GaAs lattice expansion determines the high temperature (above $50~$K) magnetic susceptibility reduction as well.
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Submitted 12 January, 2023;
originally announced January 2023.
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Shot noise in resonant tunneling: Role of inelastic scattering
Authors:
I. V. Krainov,
A. P. Dmitriev,
N. S. Averkiev
Abstract:
We study the influence of inelastic processes on shot noise and the Fano factor for a one-dimensional double-barrier structure, where resonant tunneling takes place between two terminals. Most studies to date have found, by means of various approximate or phenomenological methods, that shot noise is insensitive to dephasing caused by inelastic scattering. In this paper, we explore the status of th…
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We study the influence of inelastic processes on shot noise and the Fano factor for a one-dimensional double-barrier structure, where resonant tunneling takes place between two terminals. Most studies to date have found, by means of various approximate or phenomenological methods, that shot noise is insensitive to dephasing caused by inelastic scattering. In this paper, we explore the status of this statement by deriving a general Landaur-Büttiker-type formula that expresses the current noise and Fano factor in a one-dimensional conductor through inelastic scattering amplitudes. For a double-barrier structure, exact scattering amplitudes are calculated in the presence of a time-dependent potential. As an example of dephasing potential, we consider the one induced by equilibrium phonons. We calculate transmission coefficients of a double-barrier structure for these two types of phonon-induced dephasing. In the case of diffusive phase relaxation valid for one dimension phonons, the resonant level has a Lorentzian shape. For phonons whith high dimensions logarithmic dephasing realized which leads to an unusual shape of the size-quantized level characterized by the two energy scales. We further calculate the Fano factor for these types of dephasing, using exact expressions for inelastic transmission and reflection amplitudes. It turned out that when an integer number of levels fall into the energy window of width eV, where V is the voltage applied to the structure, the Fano factor is really insensitive to inelastic processes inside the structure and coincides with the prediction of phenomenological models with an accuracy of small corrections depending on these processes. On the contrary, at low voltages, when the eV window is smaller than the level width, this dependence is particularly pronounced and the phenomenological formula does not work.
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Submitted 9 July, 2022;
originally announced July 2022.
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Dissipative phase transition in systems with two-photon drive and nonlinear dissipation near the critical point
Authors:
V. Yu. Mylnikov,
S. O. Potashin,
G. S. Sokolovskii,
N. S. Averkiev
Abstract:
We study dissipative phase transition near the critical point for a system with two-photon driving and nonlinear dissipation. The proposed mean-field theory, which explicitly takes into account quantum fluctuations, allowed us to describe properly the evolution dynamics of the system and to demonstrate the new effects in the steady-state. We show that the presence of quantum fluctuations leads to…
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We study dissipative phase transition near the critical point for a system with two-photon driving and nonlinear dissipation. The proposed mean-field theory, which explicitly takes into account quantum fluctuations, allowed us to describe properly the evolution dynamics of the system and to demonstrate the new effects in the steady-state. We show that the presence of quantum fluctuations leads to a power-law dependence of the anomalous average at the phase transition point, with which the critical exponent is associated. Also, we investigate the effect of the quantum fluctuations on the critical point renormalization and demonstrate the existence of a two-photon pump threshold. It is noteworthy that the obtained results are in a good agreement with the numerical simulations.
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Submitted 19 May, 2021; v1 submitted 23 April, 2021;
originally announced April 2021.
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Anisotropic magnetoresistance and memory effect in bulk systems with extended defects
Authors:
K. S. Denisov,
K. A. Baryshnikov,
P. S. Alekseev,
N. S. Averkiev
Abstract:
Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured by the presence of the extended one-dimensional defects, such as screw dislocations or static charge stripes. We demonstrate that accounting for the memory effe…
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Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured by the presence of the extended one-dimensional defects, such as screw dislocations or static charge stripes. We demonstrate that accounting for the memory effect, that is the capture of electrons on collisionless spiral trajectories winding around extended defects, leads to the strong negative magnetoresistance in case when the external magnetic field direction becomes parallel to the defects axis. This effect gives rise to a significant magnetoresistance anisotropy already for an isotropic Fermi surface and no spin-orbit effects. The proposed resistivity feature can be used to detect one-dimensional scattering defects in these systems.
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Submitted 2 April, 2021;
originally announced April 2021.
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Spin relaxation in diluted magnetic semiconductors. GaMnAs as example
Authors:
I. V. Krainov,
V. F. Sapega,
G. S. Dimitriev,
N. S. Averkiev
Abstract:
We report on study of magnetic impurities spin relaxation in diluted magnetic semiconductors above Curie temperature. Systems with a high concentration of magnetic impurities where magnetic correlations take place were studied. The developed theory assumes that main channel of spin relaxation is mobile carriers providing indirect interactions between magnetic impurities. Our theoretical model is s…
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We report on study of magnetic impurities spin relaxation in diluted magnetic semiconductors above Curie temperature. Systems with a high concentration of magnetic impurities where magnetic correlations take place were studied. The developed theory assumes that main channel of spin relaxation is mobile carriers providing indirect interactions between magnetic impurities. Our theoretical model is supported by experimental measurements of manganese spin relaxation time in GaMnAs by means of spin-flip Raman scattering. It is found that with temperature increase spin relaxation rate of ferromagnetic samples increases and tends to that measured in paramagnetic sample.
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Submitted 1 April, 2021;
originally announced April 2021.
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Fingerprints of the electron skew-scattering on paramagnetic impurities in semiconductor systems
Authors:
M. A. Rakitskii,
K. S. Denisov,
I. V. Rozhansky,
N. S. Averkiev
Abstract:
In this paper we argue that the electron skew-scattering on paramagnetic impurities in non-magnetic systems, such as bulk semiconductors, possesses a remarkable fingerprint allowing to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and mobile electrons leads t…
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In this paper we argue that the electron skew-scattering on paramagnetic impurities in non-magnetic systems, such as bulk semiconductors, possesses a remarkable fingerprint allowing to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and mobile electrons leads to the emergence of an electric Hall current persisting even at zero electron spin polarization. We describe two microscopic mechanisms behind this effect, namely the exchange interaction assisted skew-scattering and the conversion of the SHE induced transverse spin current to the charge one owing to the difference between the spin-up and spin-down conductivities. We propose an essentially all-electric scheme based on a spin-injection ferromagnetic-semiconductor device which allows one to reveal the effect of paramagnetic impurities on the Hall phenomena via the detection of the spin polarization independent terms in the Hall voltage.
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Submitted 17 November, 2020;
originally announced November 2020.
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Sign-reversal electron magnetization in Mn-doped semiconductor structures
Authors:
I. A. Kokurin,
A. Yu. Silov,
N. S. Averkiev
Abstract:
The diversity of various manganese types and its complexes in the Mn-doped ${\rm A^{III}B^V}$ semiconductor structures leads to a number of intriguing phenomena. Here we show that the interplay between the ordinary substitutional Mn acceptors and interstitial Mn donors as well as donor-acceptor dimers could result in a reversal of electron magnetization. In our all-optical scheme the impurity-to-b…
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The diversity of various manganese types and its complexes in the Mn-doped ${\rm A^{III}B^V}$ semiconductor structures leads to a number of intriguing phenomena. Here we show that the interplay between the ordinary substitutional Mn acceptors and interstitial Mn donors as well as donor-acceptor dimers could result in a reversal of electron magnetization. In our all-optical scheme the impurity-to-band excitation via the Mn dimers results in direct orientation of the ionized Mn-donor $d$ shell. A photoexcited electron is then captured by the interstitial Mn and the electron spin becomes parallel to the optically oriented $d$ shell. That produces, in the low excitation regime, the spin-reversal electron magnetization. As the excitation intensity increases the capture by donors is saturated and the polarization of delocalized electrons restores the normal average spin in accordance with the selection rules. A possibility of the experimental observation of the electron spin reversal by means of polarized photoluminescence is discussed.
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Submitted 8 July, 2020;
originally announced July 2020.
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Chiral spin structure of electron gas in systems with magnetic skyrmions
Authors:
L. A. Yung,
K. S. Denisov,
I. V. Rozhansky,
N. S. Averkiev,
E. Lahderanta
Abstract:
The theoretical study considers chiral spin texture induced in a 2D electron gas (2DEG) by magnetic skyrmions. We calculate the electron gas spin density as a linear response to the exchange interaction between the 2DEG and the magnetization field of a magnetic skyrmion. Two physically distinct regimes occur. When the size of the skyrmion is larger than the inverse Fermi wavevector $k_F^{-1}$, the…
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The theoretical study considers chiral spin texture induced in a 2D electron gas (2DEG) by magnetic skyrmions. We calculate the electron gas spin density as a linear response to the exchange interaction between the 2DEG and the magnetization field of a magnetic skyrmion. Two physically distinct regimes occur. When the size of the skyrmion is larger than the inverse Fermi wavevector $k_F^{-1}$, the spin density response follows the magnetization profile of the skyrmion. In the opposite case of a small skyrmion the emerging spin structure of 2DEG has a characteristic size of $k_F^{-1}$ and the response becomes non-local, it can be viewed as chiral Friedel oscillations. At that, the emerging spin structure of the oscillations appears to be more complex than that of the skyrmion itself.
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Submitted 15 November, 2019;
originally announced November 2019.
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Chiral spin ordering of electron gas in solids with broken time reversal symmetry
Authors:
K. S. Denisov,
I. V. Rozhansky,
N. S. Averkiev,
E. Lahderanta
Abstract:
In this work we manifest that an electrostatic disorder in conducting systems with broken time reversal symmetry universally leads to a chiral ordering of the electron gas giving rise to skyrmion-like textures in spatial distribution of the electron spin density. We describe a microscopic mechanism underlying the formation of the equilibrium chiral spin textures in two-dimensional systems with spi…
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In this work we manifest that an electrostatic disorder in conducting systems with broken time reversal symmetry universally leads to a chiral ordering of the electron gas giving rise to skyrmion-like textures in spatial distribution of the electron spin density. We describe a microscopic mechanism underlying the formation of the equilibrium chiral spin textures in two-dimensional systems with spin-orbit interaction and exchange spin splitting. We have obtained analytical expressions for spin-density response functions and have analyzed both local and non-local spin response to electrostatic perturbations for systems with parabolic-like and Dirac electron spectra. With the proposed theory we come up with a concept of controlling spin chirality by electrical means.
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Submitted 7 March, 2019;
originally announced March 2019.
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Two components of donor-acceptor recombination in compensated semiconductors. Analytical model of spectra in presence of electrostatic fluctuations
Authors:
N. A. Bogoslovskiy,
P. V. Petrov,
Yu. L. Ivanov K. D. Tsendin,
N. S. Averkiev
Abstract:
We report numerical and analytical studies of the donor-acceptor recombination in compensated semiconductors. Our calculations take into account random electric fields of charged impurities which are important in non zero compensation case. We show that the donor-acceptor optical spectrum can be described as a sum of two components: monomolecular and bimolecular. In the low compensation limit we d…
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We report numerical and analytical studies of the donor-acceptor recombination in compensated semiconductors. Our calculations take into account random electric fields of charged impurities which are important in non zero compensation case. We show that the donor-acceptor optical spectrum can be described as a sum of two components: monomolecular and bimolecular. In the low compensation limit we develop two analytical models for both types of the recombination. Also our numerical simulation predicts that these two components of the photoluminescence spectra can be resolved under certain experimental conditions.
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Submitted 8 September, 2018;
originally announced September 2018.
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General theory of topological Hall effect in systems with chiral spin textures
Authors:
K. S. Denisov,
I. V. Rozhansky,
N. S. Averkiev,
E. Lahderanta
Abstract:
We present a consistent theory of the topological Hall effect (THE) in 2D magnetic systems with disordered array of chiral spin textures, such as magnetic skyrmions. We focus on the scattering regime when the mean-free path of itinerant electrons exceeds the spin texture size, and THE arises from the asymmetric carrier scattering on individual chiral spin textures. We calculate the resistivity ten…
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We present a consistent theory of the topological Hall effect (THE) in 2D magnetic systems with disordered array of chiral spin textures, such as magnetic skyrmions. We focus on the scattering regime when the mean-free path of itinerant electrons exceeds the spin texture size, and THE arises from the asymmetric carrier scattering on individual chiral spin textures. We calculate the resistivity tensor on the basis of the Boltzmann kinetic equation taking into account the asymmetric scattering on skyrmions via the collision integral. Our theory describes both the adiabatic regime, when THE arises from a spin Hall effect and the non-adiabatic scattering when THE is due to purely charge transverse currents. We analyze the dependence of THE resistivity on a chiral spin texture structure,as well as on material parameters. We discuss the crossover between spin and charge regimes of THE driven by the increase of skyrmion size, the features of THE due to the variation of the Fermi energy, and the exchange interaction strength; we comment on the sign and magnitude of THE
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Submitted 19 July, 2018;
originally announced July 2018.
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Dynamic spin injection into a quantum well coupled to a spin-split bound state
Authors:
N. S. Maslova,
I. V. Rozhansky,
V. N. Mantsevich,
P. I. Arseyev,
N. S. Averkiev,
E. Lahderanta
Abstract:
We present a theoretical analysis of dynamic spin injection due to spin-dependent tunneling between a quantum well (QW) and a bound state split in spin projection due to an exchange interaction or external magnetic field. We focus on the impact of Coulomb correlations at the bound state on spin polarization and sheet density kinetics of the charge carriers in the QW. The theoretical approach is ba…
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We present a theoretical analysis of dynamic spin injection due to spin-dependent tunneling between a quantum well (QW) and a bound state split in spin projection due to an exchange interaction or external magnetic field. We focus on the impact of Coulomb correlations at the bound state on spin polarization and sheet density kinetics of the charge carriers in the QW. The theoretical approach is based on kinetic equations for the electron occupation numbers taking into account high order correlation functions for the bound state electrons. It is shown that the on-site Coulomb repulsion leads to an enhanced dynamic spin polarization of the electrons in the QW and a delay in the carriers tunneling into the bound state. The interplay of these two effects leads to non-trivial dependence of the spin polarization degree, which can be probed experimentally using time-resolved photoluminescence experiments. It is demonstrated that the influence of the Coulomb interactions can be controlled by adjusting the relaxation rates. These findings open a new way of studying the Hubbard-like electron interactions experimentally.
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Submitted 18 February, 2018;
originally announced February 2018.
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Hall effect driven by non-collinear magnetic polarons in diluted magnetic semiconductors
Authors:
K. S. Denisov,
N. S. Averkiev
Abstract:
In this letter we develop the theory of Hall effect driven by non-collinear magnetic textures (topological Hall effect - THE) in diluted magnetic semiconductors (DMS). We show that a carrier spin-orbit interaction induces a chiral magnetic ordering inside a bound magnetic polaron (BMP). The inner structure of non-collinear BMP is controlled by the type of spin-orbit coupling, allowing to create sk…
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In this letter we develop the theory of Hall effect driven by non-collinear magnetic textures (topological Hall effect - THE) in diluted magnetic semiconductors (DMS). We show that a carrier spin-orbit interaction induces a chiral magnetic ordering inside a bound magnetic polaron (BMP). The inner structure of non-collinear BMP is controlled by the type of spin-orbit coupling, allowing to create skyrmion- (Rashba) or antiskyrmion-like (Dresselhaus) configurations. The asymmetric scattering of itinerant carriers on polarons leads to the Hall signal which exists in weak external magnetic fields and low temperatures. We point out that DMS-based systems allow one to investigate experimentally the dependence of THE both on a carrier spin polarization and on a non-collinear magnetic texture shape.
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Submitted 29 January, 2018;
originally announced January 2018.
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Current-induced spin orientation in semiconductors and low-dimensional structures
Authors:
N. S. Averkiev,
I. A. Kokurin
Abstract:
We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena, such as spin Hall effect, inverse spin Hall effect and other are discussed. Our recent results in this field are presented as well.
We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena, such as spin Hall effect, inverse spin Hall effect and other are discussed. Our recent results in this field are presented as well.
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Submitted 14 June, 2017;
originally announced June 2017.
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A nontrivial crossover in topological Hall effect regimes
Authors:
K. S. Denisov,
I. V. Rozhansky,
N. S. Averkiev,
E. Lähderanta
Abstract:
We propose a new theory of the topological Hall effect (THE) in systems with chiral magnetization vortices such as magnetic skyrmions. We solve the problem of electron scattering on a magnetic skyrmion exactly, for an arbitrary strength of exchange interaction and the skyrmion size. We report the existence of different regimes of THE and resolve the apparent contradiction between the adiabatic Ber…
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We propose a new theory of the topological Hall effect (THE) in systems with chiral magnetization vortices such as magnetic skyrmions. We solve the problem of electron scattering on a magnetic skyrmion exactly, for an arbitrary strength of exchange interaction and the skyrmion size. We report the existence of different regimes of THE and resolve the apparent contradiction between the adiabatic Berry phase theoretical approach and the perturbation theory for THE. We traced how the topological charge Hall effect transforms into the spin Hall effect upon varying the exchange interaction strength or the skyrmion size. This transformation has a nontrivial character: it is accompanied by an oscillating behavior of both charge and spin Hall currents. This hallmark of THE allows one to differentiate the chirality driven contribution to Hall response in the experiments.
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Submitted 9 July, 2017; v1 submitted 16 February, 2017;
originally announced February 2017.
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Strongly temperature dependent resistance of meander-patterned graphene
Authors:
G. Yu. Vasileva,
D. Smirnov,
Yu. B. Vasilyev,
M. O. Nestoklon,
N. S. Averkiev,
S. Novikov,
I. I. Kaya,
R. J. Haug
Abstract:
We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with theory shows that this temperature dependence originates from the weak localization effect observed over a broad temper…
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We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with theory shows that this temperature dependence originates from the weak localization effect observed over a broad temperature range from 1.5 K up to 77 K. The comparison allows us to estimate the characteristic times related to quantum interference. In addition, a large resistance enhancement with temperature is observed at the quantum Hall regime near the filling factor of 2. Record high resistance and its strong temperature dependence are favorable for the construction of bolometric photodetectors.
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Submitted 13 December, 2016;
originally announced December 2016.
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Optical spectroscopy of single beryllium acceptors in GaAs/AlGaAs quantum well
Authors:
P. V. Petrov,
I. A. Kokurin,
G. V. Klimko,
S. V. Ivanov,
Yu. L. Ivánov,
P. M. Koenraad,
A. Yu. Silov,
N. S. Averkiev
Abstract:
We carry out microphotoluminescence measurements of an acceptor-bound exciton (A^0X) recombination in the applied magnetic field with a single impurity resolution. In order to describe the obtained spectra we develop a theoretical model taking into account a quantum well (QW) confinement, an electron-hole and hole-hole exchange interaction. By means of fitting the measured data with the model we a…
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We carry out microphotoluminescence measurements of an acceptor-bound exciton (A^0X) recombination in the applied magnetic field with a single impurity resolution. In order to describe the obtained spectra we develop a theoretical model taking into account a quantum well (QW) confinement, an electron-hole and hole-hole exchange interaction. By means of fitting the measured data with the model we are able to study the fine structure of individual acceptors inside the QW. The good agreement between our experiments and the model indicates that we observe single acceptors in a pure two-dimensional environment whose states are unstrained in the QW plain.
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Submitted 15 September, 2016;
originally announced September 2016.
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Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation
Authors:
P. V. Petrov,
I. A. Kokurin,
Yu. L. Ivanov,
N. S. Averkiev,
R. P. Campion,
B. L. Gallagher,
P. M. Koenraad,
A. Yu. Silov
Abstract:
The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the impurity-to-band excitation and observe a sign inversion of the luminescence polarization depending on the pump power. The g factor of a hole localized on the Mn acceptor in…
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The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the impurity-to-band excitation and observe a sign inversion of the luminescence polarization depending on the pump power. The g factor of a hole localized on the Mn acceptor in the quantum well was also found to be considerably modified from its bulk value due to the quantum confinement effect. This finding shows the importance of the local environment on magnetic properties of the dopants in semiconductor nanostructures.
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Submitted 1 September, 2016;
originally announced September 2016.
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Numerical adiabatic potentials of orthorhombic Jahn-Teller effects retrieved from ultrasound attenuation experiments. Application to the SrF2:Cr crystal
Authors:
I. V. Zhevstovskikh,
I. B. Bersuker,
V. V. Gudkov,
N. S. Averkiev,
M. N. Sarychev,
S. Zherlitsyn,
S. Yasin,
G. S. Shakurov,
V. A. Ulanov,
V. T. Surikov
Abstract:
A methodology is worked out to retrieve the numerical values of all the main parameters of the six-dimensional adiabatic potential energy surface (APES) of a polyatomic system with a quadratic T-term Jahn-Teller effect (JTE) from ultrasound experiments. The method is based on a verified assumption that ultrasound attenuation and speed encounter anomalies when the direction of propa- gation and pol…
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A methodology is worked out to retrieve the numerical values of all the main parameters of the six-dimensional adiabatic potential energy surface (APES) of a polyatomic system with a quadratic T-term Jahn-Teller effect (JTE) from ultrasound experiments. The method is based on a verified assumption that ultrasound attenuation and speed encounter anomalies when the direction of propa- gation and polarization of its wave of strain coincides with the characteristic directions of symmetry breaking in the JTE. For the SrF2:Cr crystal, employed as a basic example, we observed anomaly peaks in the temperature dependence of attenuation of ultrasound at frequencies of 50-160 MHz in the temperature interval of 40-60 K for the wave propagating along the [110] direction, for both the longitudinal and shear modes, the latter with two polarizations along the [001] and [110] axes, respectively. We show that these anomalies are due to the ultrasound relaxation by the system of non-interacting Cr2+ JT centers with orthorhombic local distortions. The interpretation of the ex- perimental findings is based on the T2g (eg +t2g) JTE problem including the linear and quadratic terms of vibronic interactions in the Hamiltonian and the same-symmetry modes reduced to one interaction mode. Combining the experimental results with a theoretical analysis we show that on the complicated six-dimensional APES of this system with three tetragonal, four trigonal, and six orthorhombic extrema points, the latter are global minima, while the former are saddle points, and we estimate numerically all the main parameters of this surface, including the linear and quadratic vibronic coupling constants, the primary force constants, the coordinates of all the extrema points and their energies, the energy barrier between the orthorhombic minima, and the tunneling splitting of the ground vibrational states.
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Submitted 7 April, 2016;
originally announced April 2016.
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Phenomenological theory of optical broadening in zero-dimensional systems applied to silicon nanocrystals
Authors:
V. V. Nikolaev,
N. S. Averkiev,
Minoru Fujii
Abstract:
We develop a phenomenological theory of inhomogeneous broadening in zero-dimensional systems and apply it to study photoluminescence (PL) spectra of silicon nanocrystals measured at helium and room temperatures. The proposed approach allowed us to explain experimentally observed PL peak asymmetry, linear dependence of the peak width on its maximum and anomalous alteration of spectral characteristi…
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We develop a phenomenological theory of inhomogeneous broadening in zero-dimensional systems and apply it to study photoluminescence (PL) spectra of silicon nanocrystals measured at helium and room temperatures. The proposed approach allowed us to explain experimentally observed PL peak asymmetry, linear dependence of the peak width on its maximum and anomalous alteration of spectral characteristics with temperature increase.
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Submitted 5 April, 2016;
originally announced April 2016.
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Scattering on magnetic skyrmion in the non-adiabatic approximation
Authors:
K. S. Denisov,
I. V. Rozhansky,
N. S. Averkiev,
E. Lahderanta
Abstract:
We present a theory of electron scattring on a magnetic skyrmion for the case when exchange interaction is moderate so that adiabatic approximation and Berry phase approach is not applicable. The theory explains the appearance of a topological Hall current in the systems with magnetic skyrmions, of a special importance its applicability to dilute magnetic semiconductors with a weak exchange intera…
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We present a theory of electron scattring on a magnetic skyrmion for the case when exchange interaction is moderate so that adiabatic approximation and Berry phase approach is not applicable. The theory explains the appearance of a topological Hall current in the systems with magnetic skyrmions, of a special importance its applicability to dilute magnetic semiconductors with a weak exchange interaction.
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Submitted 11 February, 2016;
originally announced February 2016.
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Resonant 2D-2D tunneling with account for spin-orbit interaction
Authors:
I. V. Rozhansky,
N. S. Averkiev,
E. Lähderanta
Abstract:
We present a theory of quantum tunneling between 2D layers with account for Rashba and Dresselhaus spin-orbit interaction (SOI) in the layers. Energy and momentum conservation results in a single resonant peak in the tunnel conductance between two 2D layers as has been experimentally observed for two quantum wells (QW) in GaAs/AlGaAs heterostructures. The account for SOI in the layers leads to a c…
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We present a theory of quantum tunneling between 2D layers with account for Rashba and Dresselhaus spin-orbit interaction (SOI) in the layers. Energy and momentum conservation results in a single resonant peak in the tunnel conductance between two 2D layers as has been experimentally observed for two quantum wells (QW) in GaAs/AlGaAs heterostructures. The account for SOI in the layers leads to a complex pattern in the tunneling characteristic with typical features corresponding to SOI energy. For this manifestation of SOI to be observed experimentally the characteristic energy should exceed the resonant broadening related to the particles quantum lifetime in the layers. We perform an accurate analysis of the known experimental data on electron and hole 2D-2D tunneling in AlGaAs/GaAs heterostructures. It appears that for the electron tunneling the manifestation of SOI is difficult to observe, but for the holes tunneling the parameters of the real structures used in the experiments are very close to those required by the resolution criteria. We also consider a new promising candidate for the effect to be observed, that is p-doped SiGe strained heterostructures. The reported parameters of cubic Rashba SOI and quantum lifetime in strained Ge QWs fabricated up to date already match the criteria for observing SOI in 2D-2D heavy holes tunneling. As supported by our calculations small adjustments of the parameters for AlGaAs/GaAs p-type QWs or simply designing a 2D-2D tunneling experiment for SiGe case are very likely to reveal the SOI features in the 2D-2D tunneling.
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Submitted 8 December, 2015;
originally announced December 2015.
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Resonant indirect exchange via remote 2D channel
Authors:
I. V. Rozhansky,
I. V. Krainov,
N. S. Averkiev,
B. A. Aronzon,
A. B. Davydov,
K. I. Kugel,
V. Tripathi,
E. Lahderanta
Abstract:
We apply the previously developed theory of the resonant indirect exchange interaction to explain the ferromagnetic properties of the hybrid heterostructure consisting of a InGaAs-based quantum well (QW) sandwiched between GaAs barriers with a remote Mn delta-layer. The experimentally obtained dependence of the Curie temperature on the QW depth exhibits a maximum related to the region of resonant…
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We apply the previously developed theory of the resonant indirect exchange interaction to explain the ferromagnetic properties of the hybrid heterostructure consisting of a InGaAs-based quantum well (QW) sandwiched between GaAs barriers with a remote Mn delta-layer. The experimentally obtained dependence of the Curie temperature on the QW depth exhibits a maximum related to the region of resonant indirect exchange. We suggest the theoretical explanantion and a fit to this dependence as a result of the two contributions to ferromagnetism - the intralayer contribution and the resonant exchange contribution provided by the QW.
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Submitted 6 February, 2015;
originally announced February 2015.
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Non-diffusion theory of weak localization in graphene
Authors:
M. O. Nestoklon,
N. S. Averkiev
Abstract:
We put forward a theory of the weak localization in two dimensional graphene layers which explains experimentally observable transition between positive and negative magnetoresistance. Calculations are performed for the whole range of classically weak magnetic field with account on intervalley transitions. Contribution to the quantum correction which stems from closed trajectories with few scatter…
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We put forward a theory of the weak localization in two dimensional graphene layers which explains experimentally observable transition between positive and negative magnetoresistance. Calculations are performed for the whole range of classically weak magnetic field with account on intervalley transitions. Contribution to the quantum correction which stems from closed trajectories with few scatterers is carefully taken into account. We show that intervalley transitions lead not only to the transition from weak antilocalization to the weak localization, but also to the non-monotonous dependence of the conductivity on the magnetic field.
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Submitted 4 July, 2014; v1 submitted 2 July, 2014;
originally announced July 2014.
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Resonant exchange interaction in semiconductors
Authors:
I. V. Rozhansky,
I. V. Kraynov,
N. S. Averkiev,
E. Lahderanta
Abstract:
We present a non-perturbative calculation of indirect exchange interaction between two paramagnetic impurities via 2D free carriers gas separated by a tunnel barrier. The new method accounts for the impurity attractive potential producing a bound state. The calculations show that for if the bound impurity state energy lies within the energy range occupied by the free 2D carriers the indirect excha…
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We present a non-perturbative calculation of indirect exchange interaction between two paramagnetic impurities via 2D free carriers gas separated by a tunnel barrier. The new method accounts for the impurity attractive potential producing a bound state. The calculations show that for if the bound impurity state energy lies within the energy range occupied by the free 2D carriers the indirect exchange interaction is strongly enhanced due to resonant tunneling and exceeds by a few orders of magnitude what one would expect from the conventional RKKY approach.
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Submitted 3 July, 2013;
originally announced July 2013.
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Collective effects in emission of quantum dots strongly coupled to a microcavity photon
Authors:
A. N. Poddubny,
M. M. Glazov,
N. S. Averkiev
Abstract:
A theory of non-linear emission of quantum dot ensembles coupled to the optical mode of the microcavity is presented. Numerical results are compared with analytical approaches. The effects of exciton-exciton interaction within the quantum dots and with the reservoir formed by nonresonant pum** are considered. It is demonstrated, that the nonlinearity due to the interaction strongly affects the s…
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A theory of non-linear emission of quantum dot ensembles coupled to the optical mode of the microcavity is presented. Numerical results are compared with analytical approaches. The effects of exciton-exciton interaction within the quantum dots and with the reservoir formed by nonresonant pum** are considered. It is demonstrated, that the nonlinearity due to the interaction strongly affects the shape of the emission spectra. The collective superradiant mode of the excitons is shown to be stable against the non-linear effects.
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Submitted 21 September, 2012;
originally announced September 2012.
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Tunneling magnetic effect in heterostructures with paramagnetic impurities
Authors:
I. V. Rozhansky,
N. S. Averkiev,
E. Lahderanta
Abstract:
An effect of paramagnetic impurity located in a vicinity of a quantum well (QW) on spin polarization of the carriers in the QW is analyzed theoretically. Within approach of Bardeen's tunneling Hamiltonian the problem is formulated in terms of Anderson-Fano model of configuration interaction between a localized hole state at Mn and continuum of heavy hole states in the InGaAs-based QW. The hybridiz…
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An effect of paramagnetic impurity located in a vicinity of a quantum well (QW) on spin polarization of the carriers in the QW is analyzed theoretically. Within approach of Bardeen's tunneling Hamiltonian the problem is formulated in terms of Anderson-Fano model of configuration interaction between a localized hole state at Mn and continuum of heavy hole states in the InGaAs-based QW. The hybridization between the localized state and the QW leads to resonant enhancement of interband radiative recombination. The splitting of the configuration resonances induced by splitting of the localized state in magnetic field results in circular polarization of light emitted from the QW. The developed theory is capable of explaining known experimental results and allows for calculation of the photoluminescence spectra and dependence of integral polarization on temperature and other parameters.
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Submitted 3 November, 2011;
originally announced November 2011.
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Weak localization of Dirac fermions in graphene beyond the diffusion regime
Authors:
M. O. Nestoklon,
N. S. Averkiev,
S. A. Tarasenko
Abstract:
We develop a microscopic theory of the weak localization of two-dimensional massless Dirac fermions which is valid in the whole range of classically weak magnetic fields. The theory is applied to calculate magnetoresistance caused by the weak localization in graphene and conducting surfaces of bulk topological insulators.
We develop a microscopic theory of the weak localization of two-dimensional massless Dirac fermions which is valid in the whole range of classically weak magnetic fields. The theory is applied to calculate magnetoresistance caused by the weak localization in graphene and conducting surfaces of bulk topological insulators.
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Submitted 19 April, 2011; v1 submitted 25 March, 2011;
originally announced March 2011.
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Resonant photonic crystals and quasicrystals based on highly doped quantum-well structures
Authors:
M. M. Voronov,
N. S. Averkiev,
M. M. Glazov
Abstract:
A theory of light propagation through one-dimensional photonic crystals and deterministic aperiodic structures, including quasicrystals, based on doped quantum-well structures has been developed. The resonant Bragg condition, leading to the superradiant regime and formation of the widest optical reflection spectrum, has been formulated. The expressions for band gap edges for light waves in the Bra…
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A theory of light propagation through one-dimensional photonic crystals and deterministic aperiodic structures, including quasicrystals, based on doped quantum-well structures has been developed. The resonant Bragg condition, leading to the superradiant regime and formation of the widest optical reflection spectrum, has been formulated. The expressions for band gap edges for light waves in the Bragg structures have been obtained. The reflection and absorption spectra of such systems are calculated. The optical properties of the doped multiple-quantum-well structure are compared with the properties of undoped ones.
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Submitted 3 September, 2010;
originally announced September 2010.
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Non-linear emission spectra of quantum dots strongly coupled to photonic mode
Authors:
A. N. Poddubny,
M. M. Glazov,
N. S. Averkiev
Abstract:
A theory of optical emission of quantum dot arrays in quantum microcavities is developed. The regime of the strong coupling between the quantum dots and photonic mode of the cavity is considered. The quantum dots are modeled as two-level systems. In the low pum** (linear) regime the emission spectra are mainly determined by the superradiant mode where the effective dipoles of the dots oscillate…
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A theory of optical emission of quantum dot arrays in quantum microcavities is developed. The regime of the strong coupling between the quantum dots and photonic mode of the cavity is considered. The quantum dots are modeled as two-level systems. In the low pum** (linear) regime the emission spectra are mainly determined by the superradiant mode where the effective dipoles of the dots oscillate in phase. In the non-linear regime the superradiant mode is destroyed and the emission spectra are sensitive to the parity of quantum dot number. Further increase of the pum** results in the line width narrowing being an evidence of the lasing regime.
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Submitted 1 July, 2010;
originally announced July 2010.
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Conversion of hole states by acoustic solitons
Authors:
I. V. Rozhansky,
M. B. Lifshits,
S. A. Tarasenko,
N. S. Averkiev
Abstract:
The hole states in the valence band of a large class of semiconductors are degenerate in the projections of angular momentum. Here we show that the switching of a hole between the states can efficiently be realized by acoustic solitons. The microscopic mechanism of such a state conversion is related to the valence band splitting by local elastic strain. The conversion is studied here for heavy h…
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The hole states in the valence band of a large class of semiconductors are degenerate in the projections of angular momentum. Here we show that the switching of a hole between the states can efficiently be realized by acoustic solitons. The microscopic mechanism of such a state conversion is related to the valence band splitting by local elastic strain. The conversion is studied here for heavy holes localized at shallow and deep acceptors in silicon quantum wells.
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Submitted 18 May, 2009;
originally announced May 2009.
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Collective modes of quantum dot ensembles in microcavities
Authors:
N. S. Averkiev,
M. M. Glazov,
A. N. Poddubny
Abstract:
Emission spectra of quantum dot arrays in zero-dimensional microcavities are studied theoretically, and it is shown that they are determined by the competition between the formation of the collective superradiant mode and inhomogeneous broadening. The random sources method for the calculation of photoluminescence spectra under a non-resonant pum** is developed, and a microscopic justification…
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Emission spectra of quantum dot arrays in zero-dimensional microcavities are studied theoretically, and it is shown that they are determined by the competition between the formation of the collective superradiant mode and inhomogeneous broadening. The random sources method for the calculation of photoluminescence spectra under a non-resonant pum** is developed, and a microscopic justification of the random sources method within a framework of the standard diagram technique is given. The emission spectra of a microcavity are analyzed with allowance for the spread of exciton states energies caused by an inhomogeneous distribution of quantum dots and a tunneling between them. It is demonstrated that in the case of a strong tunneling coupling the luminescence spectra are sensitive to the geometric positions of the dots, and the collective mode can, under certain conditions, be stabilized by the random tunnel junctions.
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Submitted 18 September, 2008;
originally announced September 2008.
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Manifestation of spin-orbit interaction in tunneling between 2D electron layers
Authors:
I. V. Rozhansky,
N. S. Averkiev
Abstract:
An influence of spin-orbit interaction on the tunneling between two 2D electron layers is considered. Particular attention is addressed to the relation between the contribution of Rashba and Dresselhaus types. It is shown that without scattering of the electrons, the tunneling conductance can either exhibit resonances at certain voltage values or be substantially suppressed over the whole voltag…
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An influence of spin-orbit interaction on the tunneling between two 2D electron layers is considered. Particular attention is addressed to the relation between the contribution of Rashba and Dresselhaus types. It is shown that without scattering of the electrons, the tunneling conductance can either exhibit resonances at certain voltage values or be substantially suppressed over the whole voltage range. The dependence of the conductance on voltage turns out to be very sensitive to the relation between Rashba and Dresselhaus contributions even in the absence of magnetic field. The elastic scattering broadens the resonances in the first case and restores the conductance to a larger magnitude in the latter one. These effects open possibility to determine the parameters of spin-orbit interaction and electrons scattering time in tunneling experiments with no necessity of external magnetic field.
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Submitted 24 October, 2007;
originally announced October 2007.
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Light-matter interaction in doped microcavities
Authors:
N. S. Averkiev,
M. M. Glazov
Abstract:
We discuss theoretically the light-matter coupling in a microcavity containing a quantum well with a two-dimensional electron gas. The high density limit where the bound exciton states are absent is considered. The matrix element of interband optical absorbtion demonstrates the Mahan singularity due to strong Coulomb effect between the electrons and a photocreated hole. We extend the non-local d…
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We discuss theoretically the light-matter coupling in a microcavity containing a quantum well with a two-dimensional electron gas. The high density limit where the bound exciton states are absent is considered. The matrix element of interband optical absorbtion demonstrates the Mahan singularity due to strong Coulomb effect between the electrons and a photocreated hole. We extend the non-local dielectric response theory to calculate the quantum well reflection and transmission coefficients, as well as the microcavity transmission spectra. The new eigenmodes of the system are discussed. Their implications for the steady state and time resolved spectroscopy experiments are analyzed.
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Submitted 15 May, 2007; v1 submitted 10 March, 2007;
originally announced March 2007.
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Intervalley scattering and weak localization in Si-based two-dimensional structures
Authors:
A. Yu. Kuntsevich,
N. N. Klimov,
S. A. Tarasenko,
N. S. Averkiev,
V. M. Pudalov,
H. Kojima,
M. E. Gershenson
Abstract:
We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the ballistic regime to the system with two equivalent valleys in electron spectrum. This theory describes the observed magnetoresistance and allows the extraction o…
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We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the ballistic regime to the system with two equivalent valleys in electron spectrum. This theory describes the observed magnetoresistance and allows the extraction of the phase breaking time tau_phi and the intervalley scattering time tau_v. The temperature dependences tau_phi(T) for all studied structures are in good agreement with the theory of electron-electron interaction effects in two-dimensional systems. The intervalley scattering is elastic and rather strong: tau_v is typically only an order of magnitude greater than the transport time, tau. It is found that the intervalley scattering rate is temperature-independent and the ratio tau_v/tau decreases with increasing the electron density. These observations suggest that the roughness of the Si-SiO2 interface plays the major role in intervalley scattering.
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Submitted 25 January, 2007;
originally announced January 2007.
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Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells
Authors:
N. S. Averkiev,
L. E. Golub,
A. S. Gurevich,
V. P. Evtikhiev,
V. P. Kochereshko,
A. V. Platonov,
A. S. Shkolnik,
Yu. P. Efimov
Abstract:
Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic directions are extracted demonstrating anisotropy of D'yakonov-Perel' spin relaxation mechanism. The relative strengths of Rashba and Dresselhaus terms describing the…
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Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic directions are extracted demonstrating anisotropy of D'yakonov-Perel' spin relaxation mechanism. The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well structures. It is shown that the Rashba spin-orbit splitting is about four times stronger than the Dresselhaus splitting in the studied structure.
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Submitted 12 January, 2006;
originally announced January 2006.
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Linear polarization of the photoluminescence of quantum wells
Authors:
A. V. Koudinov,
N. S. Averkiev,
Yu. G. Kusrayev,
B. R. Namozov,
B. P. Zakharchenya,
D. Wolverson,
J. J. Davies,
T. Wojtowicz,
G. Karczewski,
J. Kossut
Abstract:
The degree and orientation of the magnetic-field induced linear polarization of the photoluminescence from a wide range of heterostructures containing (Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a function of detection photon energy, applied magnetic field strength and orientation in the quantum well plane. A theoretical description of this effect in terms of an in-…
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The degree and orientation of the magnetic-field induced linear polarization of the photoluminescence from a wide range of heterostructures containing (Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a function of detection photon energy, applied magnetic field strength and orientation in the quantum well plane. A theoretical description of this effect in terms of an in-plane deformation acting on the valence band states is presented and is verified by comparison with the experimental data. We attempted to identify clues to the microscopic origin of the valence band spin anisotropy and to the mechanisms which actually determine the linear polarization of the PL in the quantum wells subject to the in-plane magnetic field. The conclusions of the present paper apply in full measure to non-magnetic QWs as well as ensembles of disk-like QDs with shape and/or strain anisotropy.
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Submitted 10 January, 2006;
originally announced January 2006.
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Suppression of spin beats in magneto-oscillation phenomena in two-dimensional electron gas
Authors:
N. S. Averkiev,
M. M. Glazov,
S. A. Tarasenko
Abstract:
Theory of magneto-oscillation phenomena has been developed for two-dimensional electron systems with linear-in-k spin splitting. Both Dresselhaus and Rashba contributions are taken into account. It has been shown that the pattern of the magneto-oscillations depends drastically on the ratio between the above terms. The presence of only one type of the k-linear terms gives rise to the beats, i.e.…
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Theory of magneto-oscillation phenomena has been developed for two-dimensional electron systems with linear-in-k spin splitting. Both Dresselhaus and Rashba contributions are taken into account. It has been shown that the pattern of the magneto-oscillations depends drastically on the ratio between the above terms. The presence of only one type of the k-linear terms gives rise to the beats, i.e. two close harmonics corresponding to the spin-split subbands. However, if the strengths of both contributions are comparable, the third (central) harmonics appears in the spectrum of the magneto-oscillations. For equal strengths of the contributions, only the central harmonic survives, and the oscillations occur at a single frequency, although the k-linear terms remain in the Hamiltonian. Such suppression of the spin beats is studied in detail by the example of the Shubnikov-de Haas effect.
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Submitted 1 December, 2004;
originally announced December 2004.
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Interference of Spin Splittings in Magneto-Oscillation Phenomena in Two-Dimensional Systems
Authors:
S. A. Tarasenko,
N. S. Averkiev
Abstract:
The spin splitting caused by the terms linear in wavevector in the effective Hamiltonian containing can give rise to the new magneto-oscillation phenomena in two-dimensional systems. It is shown that the joint action of the spin-dependent contributions due to the heterostructure asymmetry and to the lack of inversion center in the bulk material suppresses beats that arise in the magneto-oscillat…
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The spin splitting caused by the terms linear in wavevector in the effective Hamiltonian containing can give rise to the new magneto-oscillation phenomena in two-dimensional systems. It is shown that the joint action of the spin-dependent contributions due to the heterostructure asymmetry and to the lack of inversion center in the bulk material suppresses beats that arise in the magneto-oscillation phenomena in the presence of the terms of only one of these types.
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Submitted 25 September, 2002;
originally announced September 2002.
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Spin Relaxation Anisotropy in Two-Dimensional Semiconductor Systems
Authors:
N. S. Averkiev,
L. E. Golub,
M. Willander
Abstract:
Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n- and p-types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times are calculated taking into account the contributions to the spin--orbit interaction due to both the bulk inversion asymmetry and the structure inversion asym…
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Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n- and p-types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times are calculated taking into account the contributions to the spin--orbit interaction due to both the bulk inversion asymmetry and the structure inversion asymmetry. It is shown that in-plane anisotropy of electron spin relaxation appears in III--V asymmetrical heterostructures. This anisotropy may be controlled by external parameters, and the spin relaxation times differ by several orders of magnitude.
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Submitted 25 February, 2002;
originally announced February 2002.
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Giant Spin Relaxation Anisotropy in Zinc-Blende Heterostructures
Authors:
N. S. Averkiev,
L. E. Golub
Abstract:
Spin relaxation in-plane anisotropy is predicted for heterostructures based on zinc-blende semiconductors. It is shown that it manifests itself especially brightly if the two spin relaxation mechanisms (D'yakonov-Perel' and Rashba) are comparable in efficiency. It is demonstrated that for the quantum well grown along the [0 0 1] direction, the main axes of spin relaxation rate tensor are [1 1 0]…
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Spin relaxation in-plane anisotropy is predicted for heterostructures based on zinc-blende semiconductors. It is shown that it manifests itself especially brightly if the two spin relaxation mechanisms (D'yakonov-Perel' and Rashba) are comparable in efficiency. It is demonstrated that for the quantum well grown along the [0 0 1] direction, the main axes of spin relaxation rate tensor are [1 1 0] and [1 -1 0].
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Submitted 30 July, 2001;
originally announced July 2001.
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Effect of intersubband scattering on weak localization in 2D systems
Authors:
N. S. Averkiev,
L. E. Golub,
S. A. Tarasenko,
M. Willander
Abstract:
The theory of weak localization is generalized for multilevel 2D systems taking into account intersubband scattering. It is shown that weak intersubband scattering which is negligible in a classical transport, affects strongly the weak-localization correction to conductivity. The anomalous magnetoresistance is calculated in the whole range of classically low magnetic fields. This correction to c…
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The theory of weak localization is generalized for multilevel 2D systems taking into account intersubband scattering. It is shown that weak intersubband scattering which is negligible in a classical transport, affects strongly the weak-localization correction to conductivity. The anomalous magnetoresistance is calculated in the whole range of classically low magnetic fields. This correction to conductivity is shown to depend strongly on the ratios of occupied level concentrations. It is demonstrated that at relatively low population of the excited subband, it is necessary to use the present theory because the high-field limit asimptotics is shown to be achieved only in classical magnetic fields.
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Submitted 7 June, 2001;
originally announced June 2001.
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Spin relaxation in asymmetrical heterostructures
Authors:
N. S. Averkiev,
L. E. Golub,
M. Willander
Abstract:
Electron spin relaxation caused by the D'yakonov-Perel' mechanism is investigated theoretically in asymmetrical A$_3$B$_5$ heterostructures. The total spin relaxation anisotropy is demonstrated for a wide range of structure parameters and temperatures. The spin relaxation rates dependences are derived for GaAs-based heterojunction and triangular quantum well. The calculations show a few orders o…
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Electron spin relaxation caused by the D'yakonov-Perel' mechanism is investigated theoretically in asymmetrical A$_3$B$_5$ heterostructures. The total spin relaxation anisotropy is demonstrated for a wide range of structure parameters and temperatures. The spin relaxation rates dependences are derived for GaAs-based heterojunction and triangular quantum well. The calculations show a few orders of magnitude difference in spin relaxation times.
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Submitted 25 November, 2000;
originally announced November 2000.
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Weak localisation in AlGaAs/GaAs p-type quantum wells
Authors:
S. Pedersen,
C. B. Sorensen,
A. Kristensen,
P. E. Lindelof,
L. E. Golub,
N. S. Averkiev
Abstract:
We have for the first time experimentally investigated the weak localisation magnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not possible to treat the spin-orbit interaction as a perturbation. This is in contrast to all prior investigations of weak localisation. In this letter we compa…
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We have for the first time experimentally investigated the weak localisation magnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not possible to treat the spin-orbit interaction as a perturbation. This is in contrast to all prior investigations of weak localisation. In this letter we compare the experimental results with a newly developed diffusion theory, which explicitly describes the weak localisation regime when the spin-orbit coupling is strong. The spin relaxation rates calculated from the fitting parameters was found to agree with theoretical expectations. Furthermore the fitting parameters indicate an enhanced phase breaking rate compared to theoretical predictions.
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Submitted 1 June, 1999; v1 submitted 5 May, 1999;
originally announced May 1999.
