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Observation of Weyl nodes in robust type-II Weyl semimetal WP2
Authors:
M. -Y. Yao,
N. Xu,
Q. Wu,
G. Autès,
N. Kumar,
V. N. Strocov,
N. C. Plumb,
M. Radovic,
O. V. Yazyev,
C. Felser,
J. Mesot,
M. Shi
Abstract:
Distinct to type-I Weyl semimetals (WSMs) that host quasiparticles described by the Weyl equation, the energy dispersion of quasiparticles in type-II WSMs violates Lorentz invariance and the Weyl cones in the momentum space are tilted. Since it was proposed that type-II Weyl fermions could emerge from (W,Mo)Te2 and (W,Mo)P2 families of materials, a large numbers of experiments have been dedicated…
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Distinct to type-I Weyl semimetals (WSMs) that host quasiparticles described by the Weyl equation, the energy dispersion of quasiparticles in type-II WSMs violates Lorentz invariance and the Weyl cones in the momentum space are tilted. Since it was proposed that type-II Weyl fermions could emerge from (W,Mo)Te2 and (W,Mo)P2 families of materials, a large numbers of experiments have been dedicated to unveil the possible manifestation of type-II WSM, e.g. the surface-state Fermi arcs. However, the interpretations of the experimental results are very controversial. Here, using angle-resolved photoemission spectroscopy supported by the first-principles calculations, we probe the tilted Weyl cone bands in the bulk electronic structure of WP2 directly, which are at the origin of Fermi arcs at the surfaces and transport properties related to the chiral anomaly in type-II WSMs. Our results ascertain that due to the spin-orbit coupling the Weyl nodes originate from the splitting of 4-fold degenerate band-crossing points with Chern numbers C = $\pm$2 induced by the crystal symmetries of WP2, which is unique among all the discovered WSMs. Our finding also provides a guiding line to observe the chiral anomaly which could manifest in novel transport properties.
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Submitted 6 April, 2019;
originally announced April 2019.
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Topological Fermi-arc surface resonances in bcc iron
Authors:
Daniel Gosálbez-Martínez,
Gabriel Autès,
Oleg V. Yazyev
Abstract:
The topological classification of matter has been extended to include semimetallic phases characterized by the presence of topologically protected band degeneracies. In Weyl semimetals, the foundational gapless topological phase, chiral degeneracies are isolated near the Fermi level and give rise to the Fermi-arc surface states. However, it is now recognized that chiral degeneracies are ubiquitous…
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The topological classification of matter has been extended to include semimetallic phases characterized by the presence of topologically protected band degeneracies. In Weyl semimetals, the foundational gapless topological phase, chiral degeneracies are isolated near the Fermi level and give rise to the Fermi-arc surface states. However, it is now recognized that chiral degeneracies are ubiquitous in the band structures of systems with broken spatial inversion ($\mathcal{P}$) or time-reversal ($\mathcal{T}$) symmetry. This leads to a broadly defined notion of topological metals, which implies the presence of disconnected Fermi surface sheets characterized by non-zero Chern numbers inherited from the enclosed chiral degeneracies. Here, we address the possibility of experimentally observing surface-related signatures of chiral degeneracies in metals. As a representative system we choose bcc iron, a well-studied archetypal ferromagnetic metal with two nontrivial electron pockets. We find that the (110) surface presents arc-like resonances attached to the topologically nontrivial electron pockets. These Fermi-arc resonances are due to two different chiral degeneracies, a type-I elementary Weyl point and a type-II composite (Chern numbers $\pm 2$) Weyl point, located at slightly different energies close to the Fermi level. We further show that these surface resonances can be controlled by changing the orientation of magnetization, eventually being eliminated following a topological phase transition. Our study thus shows that the intricate Fermi-arc features can be observed in materials as simple as ferromagnetic iron, and are possibly very common in polar and magnetic materials broadly speaking. Our study also provides methodological guidelines to identifying Fermi-arc surface states and resonances, establishing their topological origin and designing control protocols.
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Submitted 20 November, 2018;
originally announced November 2018.
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Trivial topological phase of CaAgP and the topological nodal-line transition in CaAg(P1-xAsx)
Authors:
N. Xu,
Y. T. Qian,
Q. S. Wu,
G. Autes,
C. E. Matt,
B. Q. Lv,
M. Y. Yao,
V. N. Strocov,
E. Pomjakushina,
K. Conder,
N. C. Plumb,
M. Radovic,
O. V. Yazyev,
T. Qian,
H. Ding,
J. Mesot,
M. Shi
Abstract:
By performing angle-resolved photoemission spectroscopy and first-principles calculations, we address the topological phase of CaAgP and investigate the topological phase transition in CaAg(P1-xAsx). We reveal that in CaAgP, the bulk band gap and surface states with a large bandwidth are topologically trivial, in agreement with hybrid density functional theory calculations. The calculations also i…
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By performing angle-resolved photoemission spectroscopy and first-principles calculations, we address the topological phase of CaAgP and investigate the topological phase transition in CaAg(P1-xAsx). We reveal that in CaAgP, the bulk band gap and surface states with a large bandwidth are topologically trivial, in agreement with hybrid density functional theory calculations. The calculations also indicate that application of "negative" hydrostatic pressure can transform trivial semiconducting CaAgP into an ideal topological nodal-line semimetal phase. The topological transition can be realized by partial isovalent P/As substitution at x = 0.38.
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Submitted 24 April, 2018;
originally announced April 2018.
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Electronic properties of one-dimensional nanostructures of the Bi$_2$Se$_3$ topological insulator
Authors:
Naunidh Virk,
Gabriel Autès,
Oleg V. Yazyev
Abstract:
We theoretically study the electronic structure and spin properties of one-dimensional nanostructures of the prototypical bulk topological insulator Bi$_2$Se$_3$. Realistic models of experimentally observed Bi$_2$Se$_3$ nanowires and nanoribbons are considered using the tight-binding method. At low energies, the band structures are composed of a series of evenly spaced degenerate sub-bands resulti…
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We theoretically study the electronic structure and spin properties of one-dimensional nanostructures of the prototypical bulk topological insulator Bi$_2$Se$_3$. Realistic models of experimentally observed Bi$_2$Se$_3$ nanowires and nanoribbons are considered using the tight-binding method. At low energies, the band structures are composed of a series of evenly spaced degenerate sub-bands resulting from circumferential confinement of the topological surface states. The direct band gaps due to the non-trivial $π$ Berry phase show a clear dependence on the circumference. The spin-momentum locking of the topological surface states results in a pronounced 2$π$ spin rotation around the circumference with the degree of spin polarization dependent on the the momentum along the nanostructure. Overall, the band structures and spin textures are more complicated for nanoribbons, which expose two distinct facets. The effects of reduced dimensionality are rationalized with the help of a simple model that considers circumferential quantization of the topological surface states. Furthermore, the surface spin density induced by electric current along the nanostructure shows a pronounced oscillatory dependence on the charge-carrier energy, which can be exploited in spintronics applications.
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Submitted 11 April, 2018;
originally announced April 2018.
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Enhanced ultrafast relaxation rate in the Weyl semimetal phase of $\mathbf{MoTe_2}$ measured by time-and angle-resolved photoelectron spectroscopy
Authors:
A. Crepaldi,
G. Autès,
G. Gatti,
S. Roth,
A. Sterzi,
G. Manzoni,
M. Zacchigna,
C. Cacho,
R. T. Chapman,
E. Springate,
E. A. Seddon,
Ph. Bugnon,
A. Magrez,
H. Berger,
I. Vobornik,
M. Kalläne,
A. Quer,
K. Rossnagel,
F. Parmigiani,
O. V. Yazyev,
M. Grioni
Abstract:
$\mathrm{MoTe_2}$ has recently been shown to realize in its low-temperature phase the type-II Weyl semimetal (WSM). We investigated by time- and angle- resolved photoelectron spectroscopy (tr-ARPES) the possible influence of the Weyl points in the electron dynamics above the Fermi level $\mathrm{E_F}$, by comparing the ultrafast response of $\mathrm{MoTe_2}…
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$\mathrm{MoTe_2}$ has recently been shown to realize in its low-temperature phase the type-II Weyl semimetal (WSM). We investigated by time- and angle- resolved photoelectron spectroscopy (tr-ARPES) the possible influence of the Weyl points in the electron dynamics above the Fermi level $\mathrm{E_F}$, by comparing the ultrafast response of $\mathrm{MoTe_2}$ in the trivial and topological phases. In the low-temperature WSM phase, we report an enhanced relaxation rate of electrons optically excited to the conduction band, which we interpret as a fingerprint of the local gap closure when Weyl points form. By contrast, we find that the electron dynamics of the related compound $\mathrm{WTe_2}$ is slower and temperature-independent, consistent with a topologically trivial nature of this material. Our results shows that tr-ARPES is sensitive to the small modifications of the unoccupied band structure accompanying the structural and topological phase transition of $\mathrm{MoTe_2}$.
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Submitted 28 September, 2017;
originally announced September 2017.
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Pressure effect and Superconductivity in $β$-Bi$_4$I$_4$ Topological Insulator
Authors:
A. Pisoni,
R. Gaal,
A. Zeugner,
V. Falkowski,
A. Isaeva,
H. Huppertz,
G. Autes,
O. V. Yazyev,
L. Forro
Abstract:
We report a detailed study of the transport coefficients of $β$-Bi$_4$I$_4$ quasi-one dimensional topological insulator. Electrical resistivity, thermoelectric power, thermal conductivity and Hall coefficient measurements are consistent with the possible appearance of a charge density wave order at low temperatures. Both electrons and holes contribute to the conduction in $β$-Bi$_4$I$_4$ and the d…
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We report a detailed study of the transport coefficients of $β$-Bi$_4$I$_4$ quasi-one dimensional topological insulator. Electrical resistivity, thermoelectric power, thermal conductivity and Hall coefficient measurements are consistent with the possible appearance of a charge density wave order at low temperatures. Both electrons and holes contribute to the conduction in $β$-Bi$_4$I$_4$ and the dominant type of charge carrier changes with temperature as a consequence of temperature-dependent carrier densities and mobilities. Measurements of resistivity and Seebeck coefficient under hydrostatic pressure up to 2 GPa show a shift of the charge density wave order to higher temperatures suggesting a strongly one-dimensional character at ambient pressure. Surprisingly, superconductivity is induced in $β$-Bi$_4$I$_4$ above 10 GPa with of 4.0 K which is slightly decreasing upon increasing the pressure up to 20 GPa. Chemical characterisation of the pressure-treated samples shows amorphization of $β$-Bi$_4$I$_4$ under pressure and rules out decomposition into Bi and BiI$_3$ at room-temperature conditions.
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Submitted 15 February, 2017;
originally announced February 2017.
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Distinct evolutions of Weyl fermion quasiparticles and Fermi arcs with bulk band topology in Weyl semimetals
Authors:
N. Xu,
G. Autes,
C. E. Matt,
B. Q. Lv,
M. Y. Yao,
F. Bisti,
V. N. Strocov,
D. Gawryluk,
E. Pomjakushina,
K. Conder,
N. C. Plumb,
M. Radovic,
T. Qian,
O. V. Yazyev,
J. Mesot,
H. Ding,
M. Shi
Abstract:
The Weyl semimetal phase is a recently discovered topological quantum state of matter characterized by the presence of topologically protected degeneracies near the Fermi level. These degeneracies are the source of exotic phenomena, including the realization of chiral Weyl fermions as quasiparticles in the bulk and the formation of Fermi arc states on the surfaces. Here, we demonstrate that these…
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The Weyl semimetal phase is a recently discovered topological quantum state of matter characterized by the presence of topologically protected degeneracies near the Fermi level. These degeneracies are the source of exotic phenomena, including the realization of chiral Weyl fermions as quasiparticles in the bulk and the formation of Fermi arc states on the surfaces. Here, we demonstrate that these two key signatures show distinct evolutions with the bulk band topology by performing angle-resolved photoemission spectroscopy, supported by first-principle calculations, on transition-metal monophosphides. While Weyl fermion quasiparticles exist only when the chemical potential is located between two saddle points of the Weyl cone features, the Fermi arc states extend in a larger energy scale and are robust across the bulk Lifshitz transitions associated with the recombination of two non-trivial Fermi surfaces enclosing one Weyl point into a single trivial Fermi surface enclosing two Weyl points of opposite chirality. Therefore, in some systems (e.g. NbP), topological Fermi arc states are preserved even if Weyl fermion quasiparticles are absent in the bulk. Our findings not only provide insight into the relationship between the exotic physical phenomena and the intrinsic bulk band topology in Weyl semimetals, but also resolve the apparent puzzle of the different magneto-transport properties observed in TaAs, TaP and NbP, where the Fermi arc states are similar.
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Submitted 7 February, 2017;
originally announced February 2017.
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Z2Pack: Numerical Implementation of Hybrid Wannier Centers for Identifying Topological Materials
Authors:
Dominik Gresch,
Gabriel Autès,
Oleg V. Yazyev,
Matthias Troyer,
David Vanderbilt,
B. Andrei Bernevig,
Alexey A. Soluyanov
Abstract:
The intense theoretical and experimental interest in topological insulators and semimetals has established band structure topology as a fundamental material property. Consequently, identifying band topologies has become an important, but often challenging problem, with no exhaustive solution at the present time. In this work we compile a series of techniques, some previously known, that allow for…
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The intense theoretical and experimental interest in topological insulators and semimetals has established band structure topology as a fundamental material property. Consequently, identifying band topologies has become an important, but often challenging problem, with no exhaustive solution at the present time. In this work we compile a series of techniques, some previously known, that allow for a solution to this problem for a large set of the possible band topologies. The method is based on tracking hybrid Wannier charge centers computed for relevant Bloch states, and it works at all levels of materials modeling: continuous k.p models, tight-binding models and ab initio calculations. We apply the method to compute and identify Chern, Z2 and crystalline topological insulators, as well as topological semimetal phases, using real material examples. Moreover, we provide a numerical implementation of this technique (the Z2Pack software package) that is ideally suited for high-throughput screening of materials databases for compounds with non-trivial topologies. We expect that our work will allow researchers to: (a) identify topological materials optimal for experimental probes, (b) classify existing compounds and (c) reveal materials that host novel, not yet described, topological states.
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Submitted 22 November, 2016; v1 submitted 27 October, 2016;
originally announced October 2016.
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BiTeCl and BiTeBr: a comparative high-pressure optical study
Authors:
I. Crassee,
F. Borondics,
M. K. Tran,
G. Autès,
A. Magrez,
P. Bugnon,
H. Berger,
J. Teyssier,
O. V. Yazyev,
M. Orlita,
A. Akrap
Abstract:
We here report a detailed high-pressure infrared transmission study of BiTeCl and BiTeBr. We follow the evolution of two band transitions: the optical excitation $β$ between two Rashba-split conduction bands, and the absorption $γ$ across the band gap. In the low pressure range, $p< 4$~GPa, for both compounds $β$ is approximately constant with pressure and $γ$ decreases, in agreement with band str…
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We here report a detailed high-pressure infrared transmission study of BiTeCl and BiTeBr. We follow the evolution of two band transitions: the optical excitation $β$ between two Rashba-split conduction bands, and the absorption $γ$ across the band gap. In the low pressure range, $p< 4$~GPa, for both compounds $β$ is approximately constant with pressure and $γ$ decreases, in agreement with band structure calculations. In BiTeCl, a clear pressure-induced phase transition at 6~GPa leads to a different ground state. For BiTeBr, the pressure evolution is more subtle, and we discuss the possibility of closing and reopening of the band gap. Our data is consistent with a Weyl phase in BiTeBr at 5$-$6~GPa, followed by the onset of a structural phase transition at 7~GPa.
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Submitted 28 September, 2016;
originally announced September 2016.
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Evidence for a Strong Topological Insulator Phase in $\mathrm{ZrTe_5}$
Authors:
G. Manzoni,
L. Gragnaniello,
G. Autès,
T. Kuhn,
A. Sterzi,
F. Cilento,
M. Zacchigna,
V. Enenkel,
I. Vobornik,
L. Barba,
F. Bisti,
Ph. Bugnon,
A. Magrez,
V. N. Strocov,
H. Berger,
O. V. Yazyev,
M. Fonin,
F. Parmigiani,
A. Crepaldi
Abstract:
The complex electronic properties of $\mathrm{ZrTe_5}$ have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental and theoretical study of both electronic and structural properties of $\mathrm{ZrTe_5}$, revealing that the bulk material is a strong topological insulator (ST…
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The complex electronic properties of $\mathrm{ZrTe_5}$ have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental and theoretical study of both electronic and structural properties of $\mathrm{ZrTe_5}$, revealing that the bulk material is a strong topological insulator (STI). By means of angle-resolved photoelectron spectroscopy, we identify at the top of the valence band both a surface and a bulk state. The dispersion of these bands is well captured by ab initio calculations for the STI case, for the specific interlayer distance measured in our x-ray diffraction study. Furthermore, these findings are supported by scanning tunneling spectroscopy revealing the metallic character of the sample surface, thus confirming the strong topological nature of $\mathrm{ZrTe_5}$.
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Submitted 11 August, 2016;
originally announced August 2016.
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Localized electronic states at grain boundaries on the surface of graphene and graphite
Authors:
Adina Luican-Mayer,
Jose E. Barrios-Vargas,
Jesper Toft Falkenberg,
Gabriel Autès,
Aron W. Cummings,
David Soriano,
Guohong Li,
Mads Brandbyge,
Oleg V. Yazyev,
Stephan Roche,
Eva Y. Andrei
Abstract:
Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. Understanding how the polycrystalline morphology affects the electronic properties is crucial for the development of applications such as flexib…
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Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. Understanding how the polycrystalline morphology affects the electronic properties is crucial for the development of applications such as flexible electronics, energy harvesting devices or sensors. We here report on atomic scale characterization of several GBs and on the structural-dependence of the localized electronic states in their vicinity. Using low temperature scanning tunneling microscopy (STM) and spectroscopy (STS), together with tight binding and ab initio numerical simulations we explore GBs on the surface of graphite and elucidate the interconnection between the local density of states (LDOS) and their atomic structure. We show that the electronic fingerprints of these GBs consist of pronounced resonances which, depending on the relative orientation of the adjacent crystallites, appear either on the electron side of the spectrum or as an electron-hole symmetric doublet close to the charge neutrality point. These two types of spectral features will impact very differently the transport properties allowing, in the asymmetric case to introduce transport anisotropy which could be utilized to design novel growth and fabrication strategies to control device performance.
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Submitted 31 July, 2016;
originally announced August 2016.
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A Novel Quasi-One-Dimensional Topological Insulator in Bismuth Iodide $β$-Bi$_4$I$_4$
Authors:
Gabriel Autès,
Anna Isaeva,
Luca Moreschini,
Jens C. Johannsen,
Andrea Pisoni,
Ryo Mori,
Wentao Zhang,
Taisia G. Filatova,
Alexey N. Kuznetsov,
László Forró,
Wouter Van den Broek,
Yeongkwan Kim,
Keun Su Kim,
Alessandra Lanzara,
Jonathan D. Denlinger,
Eli Rotenberg,
Aaron Bostwick,
Marco Grioni,
Oleg V. Yazyev
Abstract:
Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs)(3-6), followed by closely related ternary compounds(7-16) and predictions of several weak TIs(17-19). However, both the conceptual richness of Z$_2$ classification of TIs as well as their structural and compositional di…
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Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs)(3-6), followed by closely related ternary compounds(7-16) and predictions of several weak TIs(17-19). However, both the conceptual richness of Z$_2$ classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z$_2$ topological insulator is theoretically predicted and experimentally confirmed in the $β$-phase of quasi-one-dimensional bismuth iodide Bi$_4$I$_4$. The electronic structure of $β$-Bi$_4$I$_4$, characterized by Z$_2$ invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Our angle-resolved photoemission spectroscopy measurements on the (001) surface reveal a highly anisotropic band-crossing feature located at the point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction.
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Submitted 20 June, 2016;
originally announced June 2016.
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Robust Type-II Weyl Semimetal Phase in Transition Metal Diphosphides XP$_2$ (X = Mo, W)
Authors:
G. Autès,
D. Gresch,
M. Troyer,
A. A. Soluyanov,
O. V. Yazyev
Abstract:
The recently discovered type-II Weyl points appear at the boundary between electron and hole pockets. Type-II Weyl semimetals that host such points are predicted to exhibit a new type of chiral anomaly and possess thermodynamic properties very different from their type-I counterparts. In this Letter, we describe the prediction of a type-II Weyl semimetal phase in the transition metal diphosphides…
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The recently discovered type-II Weyl points appear at the boundary between electron and hole pockets. Type-II Weyl semimetals that host such points are predicted to exhibit a new type of chiral anomaly and possess thermodynamic properties very different from their type-I counterparts. In this Letter, we describe the prediction of a type-II Weyl semimetal phase in the transition metal diphosphides MoP$_2$ and WP$_2$. These materials are characterized by relatively simple band structures with four pairs of type-II Weyl points. Neighboring Weyl points have the same chirality, which makes the predicted topological phase robust with respect to small perturbations of the crystalline lattice. In addition, this peculiar arrangement of the Weyl points results in long topological Fermi arcs, thus making them readily accessible in angle-resolved photoemission spectroscopy.
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Submitted 25 June, 2016; v1 submitted 15 March, 2016;
originally announced March 2016.
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Electromechanical Oscillations in Bilayer Graphene
Authors:
Muhammed Malik Benameur,
Fernando Gargiulo,
Sajedeh Manzeli,
Gabriel Autes,
Mahmut Tosun,
Oleg V. Yazyev,
Andras Kis
Abstract:
Nanoelectromechanical systems (NEMS) constitute a class of devices lying at the interface between fundamental research and technological applications. Integrating novel materials such as graphene into NEMS allows studying their mechanical and electromechanical characteristics at the nanoscale and addressing fundamental questions such as electron-phonon interaction and bandgap engineering. In this…
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Nanoelectromechanical systems (NEMS) constitute a class of devices lying at the interface between fundamental research and technological applications. Integrating novel materials such as graphene into NEMS allows studying their mechanical and electromechanical characteristics at the nanoscale and addressing fundamental questions such as electron-phonon interaction and bandgap engineering. In this work, we integrate single and bilayer graphene into NEMS and probe the interplay between their mechanical and electrical properties. We show that the deflection of monolayer graphene nanoribbons results in a linear increase in their electrical resistance. Surprisingly, we observe oscillations in the electromechanical response of bilayer graphene. The proposed theoretical model suggests that these oscillations arise from quantum mechanical interference taking place due to the lateral displacement of graphene layers with respect to each other. Our work shows that bilayer graphene conceals unexpectedly rich and novel physics with promising potential in NEMS-based applications.
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Submitted 30 October, 2015;
originally announced November 2015.
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Observation of Weyl nodes and Fermi arcs in TaP
Authors:
N. Xu,
H. M. Weng,
B. Q. Lv,
C. Matt,
J. Park,
F. Bisti,
V. N. Strocov,
D. Gawryluk,
E. Pomjakushina,
K. Conder,
N. C. Plumb,
M. Radovic,
G. Autès,
O. V. Yazyev,
Z. Fang,
X. Dai,
G. Aeppli,
T. Qian,
J. Mesot,
H. Ding,
M. Shi
Abstract:
A Weyl semimetal possesses spin-polarized band-crossings, called Weyl nodes, connected by topological surface arcs. The low-energy excitations near the crossing points behave the same as massless Weyl fermions, leading to exotic properties like chiral anomaly. To have the transport properties dominated by Weyl fermions, Weyl nodes need to locate nearly at the chemical potential and enclosed by pai…
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A Weyl semimetal possesses spin-polarized band-crossings, called Weyl nodes, connected by topological surface arcs. The low-energy excitations near the crossing points behave the same as massless Weyl fermions, leading to exotic properties like chiral anomaly. To have the transport properties dominated by Weyl fermions, Weyl nodes need to locate nearly at the chemical potential and enclosed by pairs of individual Fermi surfaces with nonzero Fermi Chern numbers. Combining angle-resolved photoemission spectroscopy and first-principles calculation, here we show that TaP is a Weyl semimetal with only single type of Weyl fermions, topologically distinguished from TaAs where two types of Weyl fermions contribute to the low-energy physical properties. The simple Weyl fermions in TaP are not only of fundamental interests but also of great potential for future applications. Fermi arcs on the Ta-terminated surface are observed, which appear in a different pattern from that on the As-termination in TaAs and NbAs.
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Submitted 17 March, 2016; v1 submitted 14 July, 2015;
originally announced July 2015.
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The momentum and photon energy dependence of the circular dichroic photoemission in the bulk Rashba semiconductors BiTeX (X = I, Br, Cl)
Authors:
A. Crepaldi,
F. Cilento,
M. Zacchigna,
M. Zonno,
J. C. Johannsen,
C. Tournier-Colletta,
L. Moreschini,
I. Vobornik,
F. Bondino,
E. Magnano,
H. Berger,
A. Magrez,
Ph. Bugnon,
G. Autés,
O. V. Yazyev,
M. Grioni,
F. Parmigiani
Abstract:
Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for develo** spintronics devices, because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need of studying the spin texture of strongly spin-orbit coupled materials has recently promoted circular dichroic Angular Resolved Photoelectron Sp…
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Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for develo** spintronics devices, because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need of studying the spin texture of strongly spin-orbit coupled materials has recently promoted circular dichroic Angular Resolved Photoelectron Spectroscopy (cd-ARPES) as an indirect tool to measure the spin and the angular degrees of freedom. Here we report a detailed photon energy dependent study of the cd-ARPES spectra in BiTeX (X = I, Br and Cl). Our work reveals a large variation of the magnitude and sign of the dichroism. Interestingly, we find that the dichroic signal modulates differently for the three compounds and for the different spin-split states. These findings show a momentum and photon energy dependence for the cd-ARPES signals in the bulk Rashba semiconductor BiTeX (X = I, Br, Cl). Finally, the outcome of our experiment indicates the important relation between the modulation of the dichroism and the phase differences between the wave-functions involved in the photoemission process. This phase difference can be due to initial or final state effects. In the former case the phase difference results in possible interference effects among the photo-electrons emitted from different atomic layers and characterized by entangled spin-orbital polarized bands. In the latter case the phase difference results from the relative phases of the expansion of the final state in different outgoing partial waves.
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Submitted 17 September, 2014;
originally announced September 2014.
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Electronic Transport in Graphene with Aggregated Hydrogen Adatoms
Authors:
Fernando Gargiulo,
Gabriel Autès,
Naunidh Virk,
Stefan Barthel,
Malte Rösner,
Lisa R. M. Toller,
Tim O. Wehling,
Oleg V. Yazyev
Abstract:
Hydrogen adatoms and other species covalently bound to graphene act as resonant scattering centers affecting the electronic transport properties and inducing Anderson localization. We show that attractive interactions between adatoms on graphene and their diffusion mobility strongly modify the spatial distribution, thus fully eliminating isolated adatoms and increasing the population of larger siz…
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Hydrogen adatoms and other species covalently bound to graphene act as resonant scattering centers affecting the electronic transport properties and inducing Anderson localization. We show that attractive interactions between adatoms on graphene and their diffusion mobility strongly modify the spatial distribution, thus fully eliminating isolated adatoms and increasing the population of larger size adatom aggregates. Our scaling analysis shows that such aggregation of adatoms increases conductance by up to several orders of magnitude and results in significant extension of the Anderson localization length in the strong localization regime. We introduce a simple definition of the effective adatom concentration $x^\star$ , which describes the transport properties of both random and correlated distributions of hydrogen adatoms on graphene across a broad range of concentrations.
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Submitted 1 August, 2014;
originally announced August 2014.
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Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering
Authors:
J. -H. Chen,
G. Autès,
N. Alem,
F. Gargiulo,
A. Gautam,
M. Linck,
C. Kisielowski,
O. V. Yazyev,
S. G. Louie,
A. Zettl
Abstract:
Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of…
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Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated "valley valve" device, a critical component for valleytronics.
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Submitted 3 June, 2014;
originally announced June 2014.
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Strong out-of-plane magnetic anisotropy of Fe adatoms on Bi$_2$Te$_3$
Authors:
T. Eelbo,
M. Waśniowska,
M. Sikora,
M. Dobrzański,
A. Kozłowski,
A. Pulkin,
G. Autès,
I. Miotkowski,
O. V. Yazyev,
R. Wiesendanger
Abstract:
The electronic and magnetic properties of individual Fe atoms adsorbed on the surface of the topological insulator Bi$_2$Te$_3$(111) are investigated. Scanning tunneling microscopy and spectroscopy prove the existence of two distinct types of Fe species, while our first-principles calculations assign them to Fe adatoms in the hcp and fcc hollow sites. The combination of x-ray magnetic circular dic…
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The electronic and magnetic properties of individual Fe atoms adsorbed on the surface of the topological insulator Bi$_2$Te$_3$(111) are investigated. Scanning tunneling microscopy and spectroscopy prove the existence of two distinct types of Fe species, while our first-principles calculations assign them to Fe adatoms in the hcp and fcc hollow sites. The combination of x-ray magnetic circular dichroism measurements and angular dependent magnetization curves reveals out-of-plane anisotropies for both species with anisotropy constants of $K_{\text{fcc}} = (10 \pm 4)$ meV/atom and $K_{\text{hcp}} = (8 \pm 4)$ meV/atom. These values are well in line with the results of calculations.
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Submitted 29 March, 2014;
originally announced March 2014.
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Atomic and Electronic Structure of a Rashba $p$-$n$ Junction at the BiTeI Surface
Authors:
C. Tournier-Colletta,
G. Autès,
B. Kierren,
Ph. Bugnon,
H. Berger,
Y. Fagot-Revurat,
O. V. Yazyev,
M. Grioni,
D. Malterre
Abstract:
The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries between domains with different surface terminations. We use scanning tunneling microscopy/spectroscopy (STM/STS) to locate such junctions and investigate their atomic…
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The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries between domains with different surface terminations. We use scanning tunneling microscopy/spectroscopy (STM/STS) to locate such junctions and investigate their atomic and electronic properties. The Te- and I-terminated surfaces are identified owing to their distinct chemical reactivity, and an apparent height mismatch of electronic origin. The Rashba surface states are revealed in the STS spectra by the onset of a van Hove singularity at the band edge. Eventually, an electronic depletion is found on interfacial Te atoms, consistent with the formation of a space charge area in typical $p$-$n$ junctions.
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Submitted 23 January, 2014;
originally announced January 2014.
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Engineering Quantum Spin Hall Effect in Graphene Nanoribbons via Edge Functionalization
Authors:
Gabriel Autès,
Oleg V. Yazyev
Abstract:
Kane and Mele predicted that in presence of spin-orbit interaction graphene realizes the quantum spin Hall state. However, exceptionally weak intrinsic spin-orbit splitting in graphene ($\approx 10^{-5}$ eV) inhibits experimental observation of this topological insulating phase. To circumvent this problem, we propose a novel approach towards controlling spin-orbit interactions in graphene by means…
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Kane and Mele predicted that in presence of spin-orbit interaction graphene realizes the quantum spin Hall state. However, exceptionally weak intrinsic spin-orbit splitting in graphene ($\approx 10^{-5}$ eV) inhibits experimental observation of this topological insulating phase. To circumvent this problem, we propose a novel approach towards controlling spin-orbit interactions in graphene by means of covalent functionalization of graphene edges with functional groups containing heavy elements. Proof-of-concept first-principles calculations show that very strong spin-orbit coupling can be induced in realistic models of narrow graphene nanoribbons with tellurium-terminated edges. We demonstrate that electronic bands with strong Rashba splitting as well as the quantum spin Hall state spanning broad energy ranges can be realized in such systems. Our work thus opens up new horizons towards engineering topological electronic phases in nanostructures based on graphene and other materials by means of locally introduced spin-orbit interactions.
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Submitted 31 May, 2013;
originally announced May 2013.
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Infrared and Raman spectroscopy measurements of a transition in the crystal structure and a closing of the energy gap of BiTeI under pressure
Authors:
M. K. Tran,
J. Levallois,
P. Lerch,
J. Teyssier,
A. B. Kuzmenko,
G. Autès,
O. V. Yazyev,
A. Ubaldini,
E. Giannini,
D. van der Marel,
A. Akrap
Abstract:
BiTeI is a giant Rashba spin splitting system, in which a non-centro symmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and transmission, under pressures up to $15$ GPa. The gap feature in the optical conductivity vanishes above $p \sim 9$ GPa and does not reappear up to at least $15$ GPa. The…
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BiTeI is a giant Rashba spin splitting system, in which a non-centro symmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and transmission, under pressures up to $15$ GPa. The gap feature in the optical conductivity vanishes above $p \sim 9$ GPa and does not reappear up to at least $15$ GPa. The plasma edge, associated with intrinsically doped charge carriers, is smeared out through a phase transition at $9$ GPa. Using high pressure Raman spectroscopy, we follow the vibrational modes of BiTeI, providing additional clear evidence that the transition at 9 GPa involves a change of crystal structure. This change of crystal structure possibly inhibits the high-pressure topological phase from occurring.
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Submitted 19 December, 2013; v1 submitted 23 May, 2013;
originally announced May 2013.
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Electronic Instability in a Zero-Gap Semiconductor: the Charge-Density Wave in (TaSe4)2I
Authors:
C. Tournier-Colletta,
L. Moreschini,
G. Autès,
S. Moser,
A. Crepaldi,
H. Berger,
A. L. Walter,
K. S. Kim,
A. Bostwick,
P. Monceau,
E. Rotenberg,
O. V. Yazyev,
M. Grioni
Abstract:
We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the non-distorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the CDW formation b…
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We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the non-distorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the CDW formation below T_CDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T_CDW.
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Submitted 22 March, 2013;
originally announced March 2013.
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Controlling edge states in the Kane-Mele model via edge chirality
Authors:
Gabriel Autès,
Oleg V. Yazyev
Abstract:
We investigate the dependence of band dispersion of the quantum spin Hall effect (QSHE) edge states in the Kane-Mele model on crystallographic orientation of the edges. Band structures of the one-dimensional honeycomb lattice ribbons show the presence of the QSHE edge states at all orientations of the edges given sufficiently strong spin-orbit interactions. We find that the Fermi velocities of the…
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We investigate the dependence of band dispersion of the quantum spin Hall effect (QSHE) edge states in the Kane-Mele model on crystallographic orientation of the edges. Band structures of the one-dimensional honeycomb lattice ribbons show the presence of the QSHE edge states at all orientations of the edges given sufficiently strong spin-orbit interactions. We find that the Fermi velocities of the QSHE edge-state bands increase monotonically when the edge orientation changes from zigzag (chirality angle $θ= 0^\circ$) to armchair ($θ= 30^\circ$). We propose a simple analytical model to explain the numerical results.
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Submitted 17 October, 2012;
originally announced October 2012.
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Giant ambipolar Rashba effect in a semiconductor: BiTeI
Authors:
A. Crepaldi,
L. Moreschini,
G. Autès,
C. Tournier-Colletta,
S. Moser,
N. Virk,
H. Berger,
Ph. Bugnon,
Y. J. Chang,
K. Kern,
A. Bostwick,
E. Rotenberg,
O. V. Yazyev,
M. Grioni
Abstract:
We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is not af…
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We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is not affected by adsorbate-induced changes in the surface potential. These findings demonstrate that two properties crucial for enabling semiconductor-based spin electronics -- a large, robust spin splitting and ambipolar conduction -- are present in this material.
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Submitted 7 May, 2012;
originally announced May 2012.
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New mechanism for generating spin transfer torque without charge current
Authors:
G. Autès,
J. Mathon,
A. Umerski
Abstract:
A new physical mechanism for generating spin-transfer torque is proposed. It is due to interference of bias driven nonequilibrium electrons incident on a switching junction with the electrons reflected from an insulating barrier inserted in the junction after the switching magnet. It is shown using the rigorous Keldysh formalism that this new out-of-plane torque $T_{\perp}$ is proportional to an a…
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A new physical mechanism for generating spin-transfer torque is proposed. It is due to interference of bias driven nonequilibrium electrons incident on a switching junction with the electrons reflected from an insulating barrier inserted in the junction after the switching magnet. It is shown using the rigorous Keldysh formalism that this new out-of-plane torque $T_{\perp}$ is proportional to an applied bias and is as large as the torque in a conventional junction generated by a strong charge current. However, the charge current and the in-plane torque $T_{\parallel}$ are almost completely suppressed by the insulating barrier. This new junction thus offers the highly applicable possibility of bias-induced switching of magnetization without charge current.
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Submitted 22 November, 2011; v1 submitted 14 November, 2011;
originally announced November 2011.
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Electronic transport in iron atomic contacts: from the infinite wire to realistic geometries
Authors:
Gabriel Autes,
Cyrille Barreteau,
Daniel Spanjaard,
Marie-Catherine Desjonquères
Abstract:
We present a theoretical study of spin polarized transport in Fe atomic contacts using a self-consistent tight-binding Hamiltonian in a non-orthogonal $s$, $p$ and $d$ basis set, the spin-polarization being obtained from a non-collinear Stoner-like model and the transmission probability from the Fisher-Lee formula. The behaviour of an infinite perfect Fe wire is compared with that of an infinite…
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We present a theoretical study of spin polarized transport in Fe atomic contacts using a self-consistent tight-binding Hamiltonian in a non-orthogonal $s$, $p$ and $d$ basis set, the spin-polarization being obtained from a non-collinear Stoner-like model and the transmission probability from the Fisher-Lee formula. The behaviour of an infinite perfect Fe wire is compared with that of an infinite chain presenting geometric defects or magnetic walls and with that of a finite chain connected to infinite one-dimensional or three-dimensional leads. In the presence of defects or contacts the transmission probability of $d$ electrons is much more affected than that of $s$ electrons, in particular, contact effects may suppress some transmission channels. It is shown that the behaviour of an infinite wire is never obtained even in the limit of long chains connected to electrodes. The introduction of the spin-orbit coupling term in the Hamiltonian enables us to calculate the anisotropy of the magneto-resistance. Finally whereas the variation of the magneto-resistance as a function of the magnetization direction is step-like for an infinite wire, it becomes smooth in the presence of defects or contacts.
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Submitted 12 February, 2008;
originally announced February 2008.
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Giant orbital moments are responsible for the anisotropic magnetoresistance of atomic contacts
Authors:
Gabriel Autes,
Cyrille Barreteau,
Marie-Catherine Desjonquères,
Daniel Spanjaard,
Michel Viret
Abstract:
We study here, both experimentally and theoretically, the anisotropy of magnetoresistance in atomic contacts. Our measurements on iron break junctions reveal an abrupt and hysteretic switch between two conductance levels when a large applied field is continuously rotated. We show that this behaviour stems from the coexistence of two metastable electronic states which result from the anisotropy o…
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We study here, both experimentally and theoretically, the anisotropy of magnetoresistance in atomic contacts. Our measurements on iron break junctions reveal an abrupt and hysteretic switch between two conductance levels when a large applied field is continuously rotated. We show that this behaviour stems from the coexistence of two metastable electronic states which result from the anisotropy of electronic interactions responsible for the enhancement of orbital magnetization. In both states giant orbital moments appear on the low coordinated central atom in a realistic contact geometry. However they differ by their orientation, parallel or perpendicular, with respect to the axis of the contact. Our explanation is totally at variance with the usual model based on the band structure of a monatomic linear chain, which we argue cannot be applied to 3d ferromagnetic metals.
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Submitted 12 February, 2008;
originally announced February 2008.
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Orbital contribution to the magnetic properties of iron as a function of dimensionality
Authors:
Marie-Catherine Desjonquères,
Cyrille Barreteau,
Gabriel Autes,
Daniel Spanjaard
Abstract:
The orbital contribution to the magnetic properties of Fe in systems of decreasing dimensionality (bulk, surfaces, wire and free clusters) is investigated using a tight-binding hamiltonian in an $s, p,$ and $d$ atomic orbital basis set including spin-orbit coupling and intra-atomic electronic interactions in the full Hartree-Fock (HF) scheme, i.e., involving all the matrix elements of the Coulom…
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The orbital contribution to the magnetic properties of Fe in systems of decreasing dimensionality (bulk, surfaces, wire and free clusters) is investigated using a tight-binding hamiltonian in an $s, p,$ and $d$ atomic orbital basis set including spin-orbit coupling and intra-atomic electronic interactions in the full Hartree-Fock (HF) scheme, i.e., involving all the matrix elements of the Coulomb interaction with their exact orbital dependence. Spin and orbital magnetic moments and the magnetocrystalline anisotropy energy (MAE) are calculated for several orientations of the magnetization. The results are systematically compared with those of simplified hamiltonians which give results close to those obtained from the local spin density approximation. The full HF decoupling leads to much larger orbital moments and MAE which can reach values as large as 1$μ_B$ and several tens of meV, respectively, in the monatomic wire at the equilibrium distance. The reliability of the results obtained by adding the so-called Orbital Polarization Ansatz (OPA) to the simplified hamiltonians is also discussed. It is found that when the spin magnetization is saturated the OPA results for the orbital moment are in qualitative agreement with those of the full HF model. However there are large discrepancies for the MAE, especially in clusters. Thus the full HF scheme must be used to investigate the orbital magnetism and MAE of low dimensional systems.
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Submitted 22 March, 2007;
originally announced March 2007.
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Orbital contribution to the magnetic properties of nanowires: Is the orbital polarization ansatz justified?
Authors:
Marie-Catherine Desjonqueres,
Cyrille Barreteau,
Gabriel Autes,
Daniel Spanjaard
Abstract:
We show that considerable orbital magnetic moments and magneto-crystalline anisotropy energies are obtained for a Fe monatomic wire described in a tight-binding method with intra-atomic electronic interactions treated in a full Hartree Fock (HF) decoupling scheme. Even-though the use of the orbital polarization ansatz with simplified Hamiltonians leads to fairly good results when the spin magnet…
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We show that considerable orbital magnetic moments and magneto-crystalline anisotropy energies are obtained for a Fe monatomic wire described in a tight-binding method with intra-atomic electronic interactions treated in a full Hartree Fock (HF) decoupling scheme. Even-though the use of the orbital polarization ansatz with simplified Hamiltonians leads to fairly good results when the spin magnetization is saturated this is not the case of unsaturated systems. We conclude that the full HF scheme is necessary to investigate low dimensional systems.
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Submitted 12 July, 2006; v1 submitted 3 July, 2006;
originally announced July 2006.
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Magnetism of iron: from the bulk to the monoatomic wire
Authors:
Gabriel Autes,
Cyrille Barreteau,
Daniel Spanjaard,
Marie-Catherine Desjonqueres
Abstract:
The magnetic properties of iron (spin and orbital magnetic moments, magnetocrystalline anisotropy energy) in various geometries and dimensionalities are investigated by using a parametrized tight-binding model in an $s$, $p$ and $d$ atomic orbital basis set including spin polarization and the effect of spin-orbit coupling. The validity of this model is well established by comparing the results w…
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The magnetic properties of iron (spin and orbital magnetic moments, magnetocrystalline anisotropy energy) in various geometries and dimensionalities are investigated by using a parametrized tight-binding model in an $s$, $p$ and $d$ atomic orbital basis set including spin polarization and the effect of spin-orbit coupling. The validity of this model is well established by comparing the results with those obtained by using an ab-initio code. This model is applied to the study of iron in bulk bcc and fcc phases, $(110)$ and $(001)$ surfaces and to the monatomic wire, at several interatomic distances. New results are derived. The variation of the component of the orbital magnetic moment on the spin quantization axis has been studied as a function of depth, revealing a significant enhancement in the first two layers, especially for the $(001)$ surface. It is found that the magnetic anisotropy energy is drastically increased in the wire and can reach several meV. This is also true for the orbital moment, which in addition is highly anisotropic. Furthermore it is shown that when the spin quantization axis is neither parallel nor perpendicular to the wire the average orbital moment is not aligned with the spin quantization axis. At equilibrium distance the easy magnetization axis is along the wire but switches to the perpendicular direction under compression. The success of this model opens up the possibility of obtaining accurate results on other elements and systems with much more complex geometries.
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Submitted 6 March, 2006;
originally announced March 2006.
