Study of molecular spin-crossover complex Fe(phen)2(NCS)2 thin films
Authors:
Shengwei Shi,
G. Schmerber,
J. Arabski,
J. -B. Beaufrand,
D. J. Kim,
S. Boukari,
M. Bowen,
N. T. Kemp,
N. Viart,
G. Rogez,
E. Beaurepaire,
H. Aubriet,
J. Petersen,
C. Becker,
D. Ruch
Abstract:
We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)2(NCS)2 (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime,…
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We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)2(NCS)2 (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime, we deduce a mobility of 6.5x10-6 cm2/V?s that is similar to the low-range mobility measured on the widely studied tris(8-hydroxyquinoline)aluminium organic semiconductor. This work paves the way for multifunctional molecular devices based on spin-crossover complexes.
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Submitted 5 August, 2009;
originally announced August 2009.
