Showing 1–20 of 20 results for author: Attiaoui, A

Efficient Collaborations through Weight-Driven Coalition Dynamics in Federated Learning Systems

Authors: Mohammed El Hanjri, Hamza Reguieg, Adil Attiaoui, Amine Abouaomar, Abdellatif Kobbane, Mohamed El Kamili

Abstract: In the era of the Internet of Things (IoT), decentralized paradigms for machine learning are gaining prominence. In this paper, we introduce a federated learning model that capitalizes on the Euclidean distance between device model weights to assess their similarity and disparity. This is foundational for our system, directing the formation of coalitions among devices based on the closeness of the… ▽ More In the era of the Internet of Things (IoT), decentralized paradigms for machine learning are gaining prominence. In this paper, we introduce a federated learning model that capitalizes on the Euclidean distance between device model weights to assess their similarity and disparity. This is foundational for our system, directing the formation of coalitions among devices based on the closeness of their model weights. Furthermore, the concept of a barycenter, representing the average of model weights, helps in the aggregation of updates from multiple devices. We evaluate our approach using homogeneous and heterogeneous data distribution, comparing it against traditional federated learning averaging algorithm. Numerical results demonstrate its potential in offering structured, outperformed and communication-efficient model for IoT-based machine learning. △ Less

Submitted 22 January, 2024; originally announced January 2024.

Comments: 6 pages, 4 figures, conference

Continuous-wave GeSn light emitting diodes on silicon with $2.5 \, μ$m room-temperature emission

Authors: Mahmoud R. M. Atalla, Simone Assali, Gérard Daligou, Anis Attiaoui, Sebastian Koelling, Patrick Daoust, Oussama Moutanabbir

Abstract: Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this longstanding challenge, GeSn semiconductors have been proposed as versatile building blocks for silicon-integrated optoelectronic devices. In this regard, this work dem… ▽ More Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this longstanding challenge, GeSn semiconductors have been proposed as versatile building blocks for silicon-integrated optoelectronic devices. In this regard, this work demonstrates light-emitting diodes (LEDs) consisting of a vertical PIN double heterostructure p-Ge$_{0.94}$Sn$_{0.06}$/i-Ge$_{0.91}$Sn$_{0.09}$/n-Ge$_{0.95}$Sn$_{0.05}$ grown epitaxially on a silicon wafer using germanium interlayer and multiple GeSn buffer layers. The emission from these GeSn LEDs at variable diameters in the 40-120 $μ$m range is investigated under both DC and AC operation modes. The fabricated LEDs exhibit a room temperature emission in the extended short-wave range centered around 2.5 $μ$m under an injected current density as low as 45 A/cm$^2$. By comparing the photoluminescence and electroluminescence signals, it is demonstrated that the LED emission wavelength is not affected by the device fabrication process or heating during the LED operation. Moreover, the measured optical power was found to increase monotonically as the duty cycle increases indicating that the DC operation yields the highest achievable optical power. The LED emission profile and bandwidth are also presented and discussed. △ Less

Submitted 29 September, 2023; originally announced October 2023.

Nuclear Spin-Depleted, Isotopically Enriched 70Ge/28Si70Ge Quantum Wells

Authors: O. Moutanabbir, S. Assali, A. Attiaoui, G. Daligou, P. Daoust, P. Del Vecchio, S. Koelling, L. Luo, N. Rotaru

Abstract: The p-symmetry of the hole wavefunction is associated with a weaker hyperfine interaction as compared to electrons, thus making hole spin qubits attractive candidates to implement long coherence quantum processors. However, recent studies demonstrated that hole qubits in planar germanium (Ge) heterostructures are still very sensitive to nuclear spin bath. These observations highlight the need to d… ▽ More The p-symmetry of the hole wavefunction is associated with a weaker hyperfine interaction as compared to electrons, thus making hole spin qubits attractive candidates to implement long coherence quantum processors. However, recent studies demonstrated that hole qubits in planar germanium (Ge) heterostructures are still very sensitive to nuclear spin bath. These observations highlight the need to develop nuclear spin-free Ge qubits to suppress this decoherence channel and evaluate its impact. With this perspective, this work demonstrates the epitaxial growth of $^\text{73}$Ge-depleted isotopically enriched $^\text{70}$Ge/SiGe quantum wells. The growth was achieved by reduced pressure chemical vapor deposition using isotopically purified monogermane $^\text{70}$GeH$_\text{4}$ and monosilane $^\text{28}$SiH$_\text{4}$ with an isotopic purity higher than 99.9 $\%$ and 99.99 $\%$, respectively. The quantum wells consist of a series of $^\text{70}$Ge/SiGe heterostructures grown on Si wafers using a Ge virtual substrate and a graded SiGe buffer layer. The isotopic purity is investigated using atom probe tomography following an analytical procedure addressing the discrepancies in the isotopic content caused by the overlap of isotope peaks in mass spectra. The nuclear spin background in the quantum wells was found to be sensitive to the growth conditions. The lowest concentration of nuclear spin-full isotopes $^\text{73}$Ge and $^\text{29}$Si in the heterostructure was established at 0.01 $\%$ in the Ge quantum well and SiGe barriers. The measured average distance between nuclear spins reaches 3-4 nm in $^\text{70}$Ge/$^\text{28}$Si$^\text{70}$Ge, which is an order of magnitude larger than in natural Ge/SiGe heterostructures. △ Less

Submitted 7 June, 2023; v1 submitted 6 June, 2023; originally announced June 2023.

Comments: 9 pages, 4 figures

Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon

Authors: Gérard Daligou, Richard Soref, Anis Attiaoui, Jaker Hossain, Mahmoud R. M. Atalla, Patrick Del Vecchio, Oussama Moutanabbir

Abstract: Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming. However, the prohibitively high cost associated with these technologies limits their broad adoption. Herein, to alleviate this challenge we introduce an all-group IV mid-infrared cell consisting of GeSn alloy directly on… ▽ More Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming. However, the prohibitively high cost associated with these technologies limits their broad adoption. Herein, to alleviate this challenge we introduce an all-group IV mid-infrared cell consisting of GeSn alloy directly on a silicon wafer. This emerging class of semiconductors provides strain and composition as degrees of freedom to control the bandgap energy thus covering the entire mid-infrared range. The proposed thermophotovoltaic device is composed of a fully relaxed Ge$_{0.83}$Sn$_{0.17}$ double heterostructure corresponding to a bandgap energy of 0.29 eV. A theoretical framework is derived to evaluate cell performance under high injection. The black-body radiation absorption is investigated using the generalized transfer matrix method thereby considering the mixed coherent/incoherent layer stacking. Moreover, the intrinsic recombination mechanisms and their importance in a narrow bandgap semiconductor were also taken into account. In this regard, the parabolic band approximation and Fermi's golden rule were combined for an accurate estimation of the radiative recombination rate. Based on these analyses, power conversion efficiencies of up to 9% are predicted for Ge$_{0.83}$Sn$_{0.17}$ thermophotovoltaic cells under black-body radiation at temperatures in the 500-1500 K range. A slight improvement in the efficiency is observed under the frontside illumination but vanishes below 800 K, while the use of a backside reflector improves the efficiency across the investigated black-body temperature range. The effects of the heterostructure thickness, surface recombination velocity, and carrier lifetime are also elucidated and discussed. △ Less

Submitted 21 February, 2023; originally announced February 2023.

Radiative Carrier Lifetime in Ge$_{1-x}$Sn$_x$ Mid-Infrared Emitters

Authors: Gérard Daligou, Anis Attiaoui, Simone Assali, Patrick Del Vecchio, Oussama Moutanabbir

Abstract: Ge$_{1-x}$Sn$_x$ semiconductors hold the premise for large-scale, monolithic mid-infrared photonics and optoelectronics. However, despite the successful demonstration of several Ge$_{1-x}$Sn$_x$-based photodetectors and emitters, key fundamental properties of this material system are yet to be fully explored and understood. In particular, little is known about the role of the material properties i… ▽ More Ge$_{1-x}$Sn$_x$ semiconductors hold the premise for large-scale, monolithic mid-infrared photonics and optoelectronics. However, despite the successful demonstration of several Ge$_{1-x}$Sn$_x$-based photodetectors and emitters, key fundamental properties of this material system are yet to be fully explored and understood. In particular, little is known about the role of the material properties in controlling the recombination mechanisms and their consequences on the carrier lifetime. Evaluating the latter is in fact fraught with large uncertainties that are exacerbated by the difficulty to investigate narrow bandgap semiconductors. To alleviate these limitations, herein we demonstrate that the radiative carrier lifetime can be obtained from straightforward excitation power- and temperature- dependent photoluminescence measurements. To this end, a theoretical framework is introduced to simulate the measured spectra by combining the band structure calculations from the k.p theory and the envelope function approximation (EFA) to estimate the absorption and spontaneous emission. Based on this model, the temperature-dependent emission from Ge$_{0.83}$Sn$_{0.17}$ samples at a biaxial compressive strain of $-1.3\%$ was investigated. The simulated spectra reproduce accurately the measured data thereby enabling the evaluation of the steady-state radiative carrier lifetimes, which are found in the 3-22 ns range for temperatures between 10 and 300 K at an excitation power of 0.9 kW/cm$^2$. For a lower power of 0.07 kW/cm$^2$, the obtained lifetime has a value of 1.9 ns at 4 K. The demonstrated approach yielding the radiative lifetime from simple emission spectra will provide valuable inputs to improve the design and modeling of Ge$_{1-x}$Sn$_x$-based devices. △ Less

Submitted 9 February, 2023; v1 submitted 5 February, 2023; originally announced February 2023.

Polarization-Tuned Fano Resonances in All-Dielectric Short-Wave Infrared Metasurface

Authors: Anis Attiaoui, Gérard Daligou, Simone Assali, Oliver Skibitzki, Thomas Schroeder, Oussama Moutanabbir

Abstract: The short-wave infrared (SWIR) is an underexploited portion of the electromagnetic spectrum in metasurface-based nanophotonics despite its strategic importance in sensing and imaging applications. This is mainly attributed to the lack of material systems to tailor light-matter interactions in this range. Herein, we address this limitation and demonstrate an all-dielectric silicon-integrated metasu… ▽ More The short-wave infrared (SWIR) is an underexploited portion of the electromagnetic spectrum in metasurface-based nanophotonics despite its strategic importance in sensing and imaging applications. This is mainly attributed to the lack of material systems to tailor light-matter interactions in this range. Herein, we address this limitation and demonstrate an all-dielectric silicon-integrated metasurface enabling polarization-induced Fano resonance control at SWIR frequencies. The platform consists of a two-dimensional Si/GeSn core/shell nanowire array on a silicon wafer. By tuning the light polarization, we show that the metasurface reflectance can be efficiently engineered due to Fano resonances emerging from the electric and magnetic dipoles competition. The interference of optically induced dipoles in high-index nanowire arrays offers additional degrees of freedom to tailor the directional scattering and the flow of light while enabling sharp polarization-modulated resonances. This tunability is harnessed in nanosensors yielding an efficient detection of 10^{-2} changes in the refractive index of the surrounding medium. △ Less

Submitted 1 December, 2022; originally announced December 2022.

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Authors: Simone Assali, Sebastian Koelling, Zeinab Abboud, Jérôme Nicolas, Anis Attiaoui, Oussama Moutanabbir

Abstract: Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the epitaxial growth of these heterostructures at a thickness of a few microns has been a challenging task due the lattice mismatch and its associated instabilities resulti… ▽ More Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the epitaxial growth of these heterostructures at a thickness of a few microns has been a challenging task due the lattice mismatch and its associated instabilities resulting from the formation of growth defects. To elucidates these limits, we outline herein a process for the strain-balanced growth on silicon of 11.1 nm/21.5 nm Ge/Si0.18Ge0.82 superlattices (SLs) with a total thickness of 16 μm corresponding to 500 periods. Composition, thickness, and interface width are preserved across the entire SL heterostructure, which is an indication of limited Si-Ge intermixing. High crystallinity and low defect density are obtained in the Ge/Si0.18Ge0.82 layers, however, the dislocation pile up at the interface with the growth substate induces micrometer-longs cracks on the surface. This eventually leads to significant layer tilt in the strain-balanced SL and in the formation of millimeter-long, free-standing flakes. These results confirm the local uniformity of structural properties and highlight the critical importance of threading dislocations in sha** the wafer-level stability of thick multi-quantum well heterostructures required to implement effective silicon-compatible Ge/SiGe photonic devices. △ Less

Submitted 16 May, 2022; originally announced May 2022.

Localized Energy States Induced by Atomic-Level Interfacial Broadening in Heterostructures

Authors: Anis Attiaoui, Gabriel Fettu, Samik Mukherjee, Matthias Bauer, Oussama Moutanabbir

Abstract: A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carriers in heterostructures in the presence of finite interfacial broadening. Applying this model to ultrathin heteroepitaxial (SiGe)m/(Si)m superlattices predicts the existence of localized energy levels in the band structu… ▽ More A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carriers in heterostructures in the presence of finite interfacial broadening. Applying this model to ultrathin heteroepitaxial (SiGe)m/(Si)m superlattices predicts the existence of localized energy levels in the band structure induced by sub-nanometer broadening, which provides additional paths for hole-electron recombination. These predicted interfacial electronic transitions and the associated absorptive effects are confirmed experimentally at variable superlattice thickness and periodicity. By map** the energy of the critical points, the optical transitions are identified between 2 and 2.5 eV thus extending the optical absorption to lower energies. This phenomenon enables a straightforward and non-destructive probe of the atomic-level broadening in heterostructures. △ Less

Submitted 27 March, 2022; originally announced March 2022.

Comments: 6 pages, 4 figures with a Supporting Material file

Dark current in monolithic extended-SWIR GeSn PIN photodetectors

Authors: Mahmoud R. M. Atalla, Simone Assali, Sebastian Koelling, Anis Attiaoui, Oussama Moutanabbir

Abstract: The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and imaging technologies. With this perspective, GeSn PIN PDs have been the subject of extensive investigations because of their bandgap tunability and silicon compatibility. However, due to growth defects, these PDs suffer a… ▽ More The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and imaging technologies. With this perspective, GeSn PIN PDs have been the subject of extensive investigations because of their bandgap tunability and silicon compatibility. However, due to growth defects, these PDs suffer a relatively high dark current density as compared to commercial III-V PDs. Herein, we elucidate the mechanisms governing the dark current in $2.6 \, μ$m GeSn PDs at a Sn content of $10$ at.%. It was found that in the temperature range of $293 \, $K -- $363 \,$K and at low bias, the diffusion and Shockley-Read-Hall (SRH) leakage mechanisms dominate the dark current in small diameter ($20 \, μ$m) devices, while combined SRH and trap assisted tunneling (TAT) leakage mechanisms are prominent in larger diameter ($160 \, μ$m) devices. However, at high reverse bias, TAT leakage mechanism becomes dominant regardless of the operating temperature and device size. The effective non-radiative carrier lifetime in these devices was found to reach $\sim 300$ -- $400$ ps at low bias. Owing to TAT leakage current, however, this lifetime reduces progressively as the bias increases. △ Less

Submitted 8 March, 2022; v1 submitted 7 March, 2022; originally announced March 2022.

A Light-Hole Quantum Well on Silicon

Authors: Simone Assali, Anis Attiaoui, Patrick Del Vecchio, Samik Mukherjee, Jérôme Nicolas, Oussama Moutanabbir

Abstract: The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to the lack of scalable materials to properly tailor the valence band character and its energy offsets, the precise engineering of light-hole (LH) states remains a serious obstacle toward coherent photon-spin interfaces neede… ▽ More The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to the lack of scalable materials to properly tailor the valence band character and its energy offsets, the precise engineering of light-hole (LH) states remains a serious obstacle toward coherent photon-spin interfaces needed for a direct map** of the quantum information encoded in photon flying qubits to stationary spin processor.4-9 Herein, to alleviate this long-standing limitation we demonstrate an all-group IV low-dimensional system consisting of highly tensile strained germanium quantum well grown on silicon allowing new degrees of freedom to control and manipulate the hole states. Wafer-level, high bi-isotropic in-plane tensile strain ($>1\%$) is achieved using strain-engineered, metastable germanium-tin alloyed buffer layers yielding quantum wells with LH ground state, high $g$-factor anisotropy, and a tunable splitting of the hole subbands. The epitaxial heterostructures display sharp interfaces with sub-nanometer broadening and show room-temperature excitonic transitions that are modulated and extended to the mid-wave infrared by controlling strain and thickness. This ability to engineer quantum structures with LH selective confinement and controllable optical response enables manufacturable silicon-compatible platforms relevant to integrated quantum communication and sensing technologies. △ Less

Submitted 2 January, 2022; v1 submitted 30 December, 2021; originally announced December 2021.

Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires

Authors: Lu Luo, Simone Assali, Mahmoud R. M. Atalla, Sebastian Koelling, Anis Attiaoui, Gérard Daligou, Sara Martí, J. Arbiol, Oussama Moutanabbir

Abstract: Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice strain relaxation in Ge/Ge0.92Sn0.08 core-shell nanowire heterostructures to implement highly responsive, room-temperature short-wave infrared nanoscale photodetect… ▽ More Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice strain relaxation in Ge/Ge0.92Sn0.08 core-shell nanowire heterostructures to implement highly responsive, room-temperature short-wave infrared nanoscale photodetectors. Atomic-level studies confirm the uniform shell composition and its higher crystallinity with respect to thin films counterparts. The demonstrated Ge/Ge0.92Sn0.08 p-type field-effect nanowire transistors exhibit superior optoelectronic properties achieving simultaneously a relatively high mobility, a high ON/OFF ratio, and a high responsivity, in addition to a broadband absorption in the short-wave infrared range. Indeed, the reduced bandgap of the Ge0.92Sn0.08 shell yields an extended cutoff wavelength of 2.1 um, with a room-temperature responsivity reaching 2.7 A/W at 1550 nm. These results highlight the potential of Ge/Ge1-xSnx core/shell nanowires as silicon-compatible building blocks for nanoscale integrated infrared photonics. △ Less

Submitted 25 March, 2022; v1 submitted 10 November, 2021; originally announced November 2021.

Comments: 22 pages, 4 figures, 1 Tables, 5 Supplementary information Figures

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

Authors: M. R. M. Atalla, S. Assali, S. Koelling, A. Attiaoui, O. Moutanabbir

Abstract: The availability of high-frequency pulsed emitters in the $2-2.5\,μ$m wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber-optical communications, surveillance and recognition, artificial intelligence, and medical imaging. However, develo** these emerging technologies and their large-scale use depend on the availability of high-speed, lo… ▽ More The availability of high-frequency pulsed emitters in the $2-2.5\,μ$m wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber-optical communications, surveillance and recognition, artificial intelligence, and medical imaging. However, develo** these emerging technologies and their large-scale use depend on the availability of high-speed, low-noise, and cost-effective photodetectors. With this perspective, here we demonstrate GeSn photodiodes grown on silicon wafers featuring a high broadband operation covering the extended-SWIR range with a peak responsivity of 0.3 A/W at room temperature. These GeSn devices exhibit a high bandwidth reaching 7.5 GHz at 5 V bias with a 2.6 $μ$m cutoff wavelength, and their integration in ultrafast time-resolved spectroscopy applications is demonstrated. In addition to enabling time-resolved electro-luminescence at 2.3 $μ$m, the high-speed operation of GeSn detectors was also exploited in the diagnostics of ultra-short pulses of a supercontinuum laser with a temporal resolution in the picosecond range at 2.5 $μ$m. Establishing these capabilities highlights the potential of manufacturable GeSn photodiodes for silicon-integrated high-speed extended-SWIR applications. △ Less

Submitted 4 November, 2021; originally announced November 2021.

Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics

Authors: Simone Assali, Anis Attiaoui, Sebastian Koelling, Mahmoud R. M. Atalla, Aashish Kumar, Jérôme Nicolas, Faqrul A. Chowdhury, Cédric Lemieux-Leduc, Oussama Moutanabbir

Abstract: A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 μm-thick Si0.06Ge0.90Sn0.04 layer that is nearly lattice-matched to a Ge on Si substrate. Atomic-level studies demonstrate high crystalline quality and uniform composition an… ▽ More A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 μm-thick Si0.06Ge0.90Sn0.04 layer that is nearly lattice-matched to a Ge on Si substrate. Atomic-level studies demonstrate high crystalline quality and uniform composition and show no sign of short-range ordering and clusters. Room temperature spectroscopic ellipsometry and transmission measurements show direct bandgap absorption at 0.83 eV and a reduced indirect bandgap absorption at lower energies. Si0.06Ge0.90Sn0.04 photoconductive devices operating at room temperature exhibit dark current and spectral responsivity (1 A/W below 1.5 μm wavelengths) similar to Ge on Si devices, with the advantage of a near-infrared band gap tunable by alloy composition. These results underline the relevance of SiGeSn semiconductors in implementing a group IV material platform for silicon-integrated infrared optoelectronics. △ Less

Submitted 12 August, 2022; v1 submitted 3 March, 2021; originally announced March 2021.

Combined Iodine- and Sulfur-based Treatments for an Effective Passivation of GeSn Surface

Authors: Léonor Groell, Anis Attiaoui, Simone Assali, Oussama Moutanabbir

Abstract: GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic and sensing platforms. Exploiting these semiconductors requires, however, the control of their epitaxy and their surface chemistry to reduce non-radiative recombination that hinders the efficiency of optoelectronic devices. Herein, we demonstrate tha… ▽ More GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic and sensing platforms. Exploiting these semiconductors requires, however, the control of their epitaxy and their surface chemistry to reduce non-radiative recombination that hinders the efficiency of optoelectronic devices. Herein, we demonstrate that a combined sulfur- and iodine-based treatments yields effective passivation of Ge and Ge0.9Sn0.1 surfaces. X-ray photoemission spectroscopy and in situ spectroscopic ellipsometry measurements were used to investigate the dynamics of surface stability and track the reoxidation mechanisms. Our analysis shows that the largest reduction in oxide after HI treatment, while HF+(NH4)2S results in a lower re-oxidation rate. A combined HI+(NH4)2S treatment preserves the lowest oxide ratio <10 % up to 1 hour of air exposure, while less than half of the initial oxide coverage is reached after 4 hours. These results highlight the potential of S- and I-based treatments in stabilizing the GeSn surface chemistry thus enabling a passivation method that is compatible with materials and device processing. △ Less

Submitted 23 February, 2021; originally announced February 2021.

All-Group IV membrane room-temperature mid-infrared photodetector

Authors: Mahmoud R. M. Atalla, Simone Assali, Anis Attiaoui, Cedric Lemieux-Leduc, Aashish Kumar, Salim Abdi, Oussama Moutanabbir

Abstract: Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as a versatile class of nanoscale materials to control lattice strain and engineer complex heterostructures leading to the development of a variety of innovative applications. H… ▽ More Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as a versatile class of nanoscale materials to control lattice strain and engineer complex heterostructures leading to the development of a variety of innovative applications. Herein we exploit this quasi-two-dimensional platform to tune simultaneously the lattice parameter and bandgap energy in group IV GeSn semiconductor alloys. As Sn content is increased to reach a direct band gap, these semiconductors become metastable and typically compressively strained. We show that the release and transfer of GeSn membranes lead to a significant relaxation thus extending the absorption wavelength range deeper in the mid-infrared. Fully released Ge$_{0.83}$Sn$_{0.17}$ membranes were integrated on silicon and used in the fabrication of broadband photodetectors operating at room temperature with a record wavelength cutoff of 4.6 $μ$m, without compromising the performance at shorter wavelengths down to 2.3 $μ$m. These membrane devices are characterized by two orders of magnitude reduction in dark current as compared to devices processed from as-grown strained epitaxial layers. The latter exhibit a content-dependent, shorter wavelength cutoff in the 2.6-3.5 $μ$m range, thus highlighting the role of lattice strain relaxation in sha** the spectral response of membrane photodetectors. This ability to engineer all-group IV transferable mid-infrared photodetectors lays the groundwork to implement scalable and flexible sensing and imaging technologies exploiting these integrative, silicon-compatible strained-relaxed GeSn membranes. △ Less

Submitted 28 August, 2020; v1 submitted 23 July, 2020; originally announced July 2020.

Extended Short-Wave Infrared Absorption in Group IV Nanowire Arrays

Authors: A. Attiaoui, É. Bouthillier, G. Daligou, A. Kumar, S. Assali, O. Moutanabbir

Abstract: Engineering light absorption in the extended short-wave infrared (e-SWIR) range using scalable materials is a long-sought-after capability that is crucial to implement cost-effective and high-performance sensing and imaging technologies. Herein, we demonstrate enhanced, tunable e-SWIR absorption using silicon-integrated platforms consisting of ordered arrays of metastable GeSn nanowires with Sn co… ▽ More Engineering light absorption in the extended short-wave infrared (e-SWIR) range using scalable materials is a long-sought-after capability that is crucial to implement cost-effective and high-performance sensing and imaging technologies. Herein, we demonstrate enhanced, tunable e-SWIR absorption using silicon-integrated platforms consisting of ordered arrays of metastable GeSn nanowires with Sn content reaching 9 at.% and variable diameters. Detailed simulations were combined with experimental analyses to systematically investigate light-GeSn nanowire interactions to tailor and optimize the nanowire array geometrical parameters and the corresponding optical response. The diameter-dependent leaky mode resonance peaks are theoretically predicted and experimentally confirmed with a tunable wavelength from 1.5 to 2.2 μm. A three-fold enhancement in the absorption with respect to GeSn layers at 2.1 μm was achieved using nanowires with a diameter of 325 nm. Finite difference time domain simulations unraveled the underlying mechanisms of the e-SWIR enhanced absorption. Coupling of the HE11 and HE12 resonant modes to nanowires is observed at diameters above 325 nm, while at smaller diameters and longer wavelengths the HE11 mode is guided into the underlying Ge layer. The presence of tapering in NWs further extends the absorption range while minimizing reflection. This ability to engineer and enhance e-SWIR absorption lays the groundwork to implement novel photonic devices exploiting all-group IV platforms. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Comments: 15 pages, 5 figures, 2 Tables, 8 Supplementary information Figures

Journal ref: Phys. Rev. Applied 15, 014034 (2021)

Mid-infrared emission and absorption in strained and relaxed direct bandgap GeSn semiconductors

Authors: Simone Assali, Alain Dijkstra, Anis Attiaoui, Étienne Bouthillier, Jos E. M. Haverkort, Oussama Moutanabbir

Abstract: By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend the room-temperature emission wavelength above ~4.0 μm upon post-growth strain relaxation in layers with uniform Sn content of 17 at.%. The fundamental mechanisms governing the optical emission are discussed bas… ▽ More By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend the room-temperature emission wavelength above ~4.0 μm upon post-growth strain relaxation in layers with uniform Sn content of 17 at.%. The fundamental mechanisms governing the optical emission are discussed based on temperature-dependent photoluminescence, absorption measurements, and theoretical simulations. Regardless of strain and composition, these analyses confirm that single-peak emission is always observed in the probed temperature range of 4-300 K, ruling out defect- and impurity-related emission. Moreover, carrier losses into thermally-activated non-radiative recombination channels are found to be greatly minimized as a result of strain relaxation. Absorption measurements validate the direct band gap absorption in strained and relaxed samples at energies closely matching photoluminescence data. These results highlight the strong potential of GeSn semiconductors as versatile building blocks for scalable, compact, and silicon-compatible mid-infrared photonics and quantum opto-electronics. △ Less

Submitted 22 December, 2020; v1 submitted 28 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Applied 15, 024031 (2021)

Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering

Authors: T. Grange, S. Mukherjee, G. Capellini, M. Montanari, L. Persichetti, L. Di Gaspare, S. Birner, A. Attiaoui, O. Moutanabbir, M. Virgilio, M. De Seta

Abstract: We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant… ▽ More We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant to the scattering potential, including both the in-plane and axial correlation inside real diffuse interfaces. Our experimental findings indicate a partial coherence of the interface roughness along the growth direction within the interfaces. We show that it is necessary to include this feature, previously neglected by theoretical models, when heterointerfaces characterized by finite interface widths are taken into consideration. △ Less

Submitted 24 April, 2020; v1 submitted 3 February, 2020; originally announced February 2020.

Journal ref: Phys. Rev. Applied 13, 044062 (2020)

3-D Atomic Map** of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices

Authors: Samik Mukherjee, Anis Attiaoui, Matthias Bauer, Oussama Moutanabbir

Abstract: The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the 3-D atomistic-level map** of the roughness and uniformity of buried epitaxial interfaces in Si/SiGe superlattices with a layer thickness in the 1.5-7.5 nm range. Herein, 3-D atom-by-atom maps were acquired and processed t… ▽ More The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the 3-D atomistic-level map** of the roughness and uniformity of buried epitaxial interfaces in Si/SiGe superlattices with a layer thickness in the 1.5-7.5 nm range. Herein, 3-D atom-by-atom maps were acquired and processed to generate iso-concentration surfaces highlighting local fluctuations in content at each interface. These generated surfaces were subsequently utilized to map the interfacial roughness and its spatial correlation length. The analysis revealed that the root mean squared roughness of the buried interfaces in the investigated superlattices is sensitive to the growth temperature with a value varying from about 0.2 nm (+/- 13%) to about 0.3 nm (+/- 11.5%) in the temperature range of 500-650 Celsius. The estimated horizontal correlation lengths were found to be 8.1 nm (+/- 5.8%) at 650 Celsius and 10.1 nm (+/- 6.2%) at 500 Celsius. Additionally, reducing the growth temperature was found to improve the interfacial abruptness, with 30 % smaller interfacial width is obtained at 500 Celsius. This behavior is attributed to the thermally activated atomic exchange at the surface during the heteroepitaxy. Finally, by testing different optical models with increasing levels of interfacial complexity, it is demonstrated that the observed atomic-level roughening at the interface must be accounted for to accurately describe the optical response of Si/SiGe heterostructures. △ Less

Submitted 2 August, 2019; originally announced August 2019.

Comments: 17 A4 pages of main manuscript, 2 table, 5 figures, 20 A4 pages of supplementary information

Enhanced IR Light Absorption in Group IV-SiGeSn Core-Shell Nanowires

Authors: Anis Attiaoui, Stephan Wirth, André-Pierre Blanchard-Dionne, Michel Meunier, J. M. Hartmann, Dan Buca, Oussama Moutanabbir

Abstract: Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engineer both lattice parameter and band gap holds the premise to develop enhanced or novel photonic, optoelectronic, and electronic devices. With this perspective, we present detailed investigations of the influence of Ge1-… ▽ More Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engineer both lattice parameter and band gap holds the premise to develop enhanced or novel photonic, optoelectronic, and electronic devices. With this perspective, we present detailed investigations of the influence of Ge1-y-xSixSny layers on the optical properties of Si- and Ge-based heterostructures and nanowires. We found that adding a thin Ge1-x-ySixSny cap** layer on Si or Ge greatly enhances light absorption especially in the near IR range leading to an increase in short-circuit current density. For the Ge1-y-xSixSny structure at thicknesses below 30 nm, a 14-fold increase in the short-circuit current is predicted with respect to bare Si. This enhancement decreases by reducing the cap** layer thickness. Conversely, decreasing the shell thickness was found to improve the short-circuit current in Si/Ge1-y-xSixSny and Ge/Ge1-y-xSixSny core/shell nanowires. The optical absorption becomes very important when increasing the Sn content. Moreover, by exploiting optical antenna effect, these nanowires show an extreme light absorption reaching an enhancement factor, with respect to Si or Ge nanowires, on the order of ~104 in Si/Ge0.84Si0.04Sn0.12 and ~12 in Ge/Ge0.84Si0.04Sn0.12 core/shell nanowires. Furthermore, we analyzed the optical response of the addition of a dielectric cap** layer consisting of Si3N4 to the Si/Ge1-y-xSixSny core-shell nanowire and found about 50% increase in short-circuit current density for a dielectric layer thickness of 45 nm and a core radius and shell thickness superior to 40 nm. The core/shell optical antenna benefits from a multiplication of enhancements contributed by leaky mode resonances in the semiconductor part and antireflection effects in the dielectric part. △ Less

Submitted 2 February, 2017; originally announced February 2017.

Comments: 47 pages, 11 figures