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Quasi-static magnetization dynamics in a compensated ferrimagnetic half-metal -- Mn$_2$Ru$_x$Ga
Authors:
Ajay Jha,
Simon Lenne,
Gwenael Atcheson,
Karsten Rode,
J. M. D. Coey,
Plamen Stamenov
Abstract:
Exploring anisotropy and diverse magnetization dynamics in specimens with vanishing magnetic moments presents a significant challenge using traditional magnetometry, as the low resolution of existing techniques hinders the ability to obtain accurate results. In this study, we delve deeper into the examination of magnetic anisotropy and quasi-static magnetization dynamics in \mrg\,(MRG) thin films,…
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Exploring anisotropy and diverse magnetization dynamics in specimens with vanishing magnetic moments presents a significant challenge using traditional magnetometry, as the low resolution of existing techniques hinders the ability to obtain accurate results. In this study, we delve deeper into the examination of magnetic anisotropy and quasi-static magnetization dynamics in \mrg\,(MRG) thin films, as an example of a compensated ferrimagnetic half-metal, by employing anomalous Hall effect measurements within a tetragonal crystal lattice system. Our research proposes an innovative approach to accurately determine the complete set of anisotropy constants of these MRG thin films. To achieve this, we perform anomalous Hall voltage curve fitting, using torque models under the macrospin approximation, which allow us to obtain out-of-plane anisotropy constants $K_1=4.0\times10^4$ J m$^{-3}$ ($K_1/M=0.655$\,T) and $K_2=2.54\times10^4$ J m$^{-3}$ ($K_2/M=0.416$\,T), along with a weaker in-plane anisotropy constant $K_3=3.48\times10^3$ J m$^{-3}$ ($K_3/M=0.057$\,T). By additionally employing first-order reversal curves (FORC) and classical Preisach hysteresis (hysterons) models, we are able to validate the efficacy of the macrospin model in capturing the magnetic behavior of MRG thin films. Furthermore, our investigation substantiates that the complex quasi-static magnetization dynamics of MRG thin films can be effectively modelled using a combination of hysteronic and torque models. This approach facilitates the exploration of both linear and non-linear quasi-static magnetization dynamics, in the presence of external magnetic field and/or current-induced effective fields, generated by the spin-orbit torque and spin transfer torque mechanisms.
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Submitted 12 July, 2023;
originally announced July 2023.
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Ru$_{2-x}$Mn$_{1+x}$Al thin films
Authors:
K. E. Siewierska,
H. Kurt,
B. Shortall,
A. Jha,
N. Teichert,
G. Atcheson,
M. Venkatesan,
J. M. D. Coey,
Z. Gercsi,
K. Rode
Abstract:
The cubic Heusler alloy Ru$_{2-x}$Mn$_{1+x}$Al is grown in thin film form on MgO and MgAl$_2$O$_4$ substrates. It is a highly spin-polarised ferrimagnetic metal, with weak magnetocrystalline anisotropy. Although structurally and chemically similar to $\text{Mn}_2\text{Ru}_x\text{Ga}$, it does not exhibit ferrimagnetic compensation, or large magneto galvanic effects. The differences are attributed…
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The cubic Heusler alloy Ru$_{2-x}$Mn$_{1+x}$Al is grown in thin film form on MgO and MgAl$_2$O$_4$ substrates. It is a highly spin-polarised ferrimagnetic metal, with weak magnetocrystalline anisotropy. Although structurally and chemically similar to $\text{Mn}_2\text{Ru}_x\text{Ga}$, it does not exhibit ferrimagnetic compensation, or large magneto galvanic effects. The differences are attributed to a combination of atomic order and the hybridisation with the group 13 element Al or Ga. The spin polarisation is around 50 to 60 %. There is a gap in the density of states just above the Fermi level in fully ordered compounds.
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Submitted 30 January, 2023; v1 submitted 24 January, 2023;
originally announced January 2023.
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Deterministic multi-level spin orbit torque switching using He+ microscopy patterning
Authors:
**u Kurian,
Aleena Joseph,
Salia Cherifi-Hertel,
Ciaran Fowley,
Gregor Hlawacek,
Peter Dunne,
Michelangelo Romeo,
Gwenaël Atcheson,
J. M. D. Coey,
Bernard Doudin
Abstract:
He$^+$ ion irradiation is used to pattern multiple areas of Pt/Co/W films with different irradiation doses in Hall bars. The resulting perpendicular magnetic anisotropy landscape enables selective multilevel current-induced switching, with full deterministic control of the position and order of the individual switching elements. Key pattern design parameters are specified, opening a way to scalabl…
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He$^+$ ion irradiation is used to pattern multiple areas of Pt/Co/W films with different irradiation doses in Hall bars. The resulting perpendicular magnetic anisotropy landscape enables selective multilevel current-induced switching, with full deterministic control of the position and order of the individual switching elements. Key pattern design parameters are specified, opening a way to scalable multilevel switching devices.
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Submitted 4 January, 2023;
originally announced January 2023.
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Single-pulse all-optical switching in amorphous Dy$_x$Co$_{1-x}\text{ }$ and Tb$_x$Co$_{1-x}$
Authors:
Zexiang Hu,
Jean Besbas,
Ross Smith,
Niclas Teichert,
Gwenael Atcheson,
Karsten Rode,
Plamen Stamenov,
J. M. D. Coey
Abstract:
Repeated uniform switching of the magnetization of thin films of ferrimagnetic amorphous Gd$_{x}$(FeCo)$_{1-x}$ in response to single fast laser pulses is well established. Here we report unusual toggle switching in thin films of sperimagnetic amorphous Dy$_x$Co$_{1-x}$ and Tb$_x$Co$_{1-x}$ with $\it{x} \simeq$ 0.25 irradiated with single 200 fs pulses of 800 nm laser light. The samples have stron…
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Repeated uniform switching of the magnetization of thin films of ferrimagnetic amorphous Gd$_{x}$(FeCo)$_{1-x}$ in response to single fast laser pulses is well established. Here we report unusual toggle switching in thin films of sperimagnetic amorphous Dy$_x$Co$_{1-x}$ and Tb$_x$Co$_{1-x}$ with $\it{x} \simeq$ 0.25 irradiated with single 200 fs pulses of 800 nm laser light. The samples have strong local random anisotropy due to the non-S state rare earth. The compensation temperature of the films is $\le$ 180 K and their Curie temperature is $\simeq$ 500 K. They are mostly switched by the first pulse, and subsequent pulses lead to partial re-switching of a decreasing amount of the irradiated area, with a granular structure of submicron regions of switched and unswitched material. Individual switched domains about 700 nm in size are observed around the edge of the irradiated spots where the fluence is at the threshold for switching. Results are discussed in terms of a random anisotropy model where the ratio of local anisotropy to exchange is temperature dependent and close to the threshold for strong pinning.
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Submitted 29 November, 2021;
originally announced November 2021.
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Stability of Mn2RuxGa-based Multilayer Stacks
Authors:
Gwenael Atcheson,
Katarzyna Siewierska,
J. M. D. Coey,
Karsten Rode,
Plamen Stamenov
Abstract:
Perpendicular heterostructures based on a ferrimagnetic Mn2RuxGa (MRG) layer and a ferromagnetic Co/Pt multilayer were examined to understand the effects of different spacer layers (V, Mo, Hf, HfOx and TiN) on the interfaces with the magnetic electrodes, after annealing at 350 C. Loss of perpendicular anisotropy in MRG is strongly correlated with a reduction in the substrate-induced tetragonality…
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Perpendicular heterostructures based on a ferrimagnetic Mn2RuxGa (MRG) layer and a ferromagnetic Co/Pt multilayer were examined to understand the effects of different spacer layers (V, Mo, Hf, HfOx and TiN) on the interfaces with the magnetic electrodes, after annealing at 350 C. Loss of perpendicular anisotropy in MRG is strongly correlated with a reduction in the substrate-induced tetragonality due to relaxation of the crystal structure. In the absence of diffusion, strain and chemical ordering within MRG are correlated. The limited solubility of both Hf and Mo in MRG is a source of additional valence electrons, which results in an increase in compensation temperature Tcomp. This also stabilises perpendicular anisotropy, compensating for changes in strain and defect density. The reduction in squareness of the MRG hysteresis loop measured by anomalous Hall effect is <10 %, making it useful in active devices. Furthermore, a CoPt3 phase with (2 2 0) texture in the perpendicular Co/Pt free layer promoted by a Mo spacer layer is the only one that retains its perpendicular anisotropy on annealing.
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Submitted 20 September, 2021; v1 submitted 27 April, 2021;
originally announced April 2021.
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Magnetic reversal and pinning in a perpendicular zero moment half-metal
Authors:
Niclas Teichert,
Gwenael Atcheson,
Katarzyna Siewierska,
Marta Norah Sanz-Ortiz,
M. Venkatesan,
Karsten Rode,
Solveig Felton,
Plamen Stamenov,
JMD Coey
Abstract:
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to external fields, fast spin dynamics and rapid domain wall motion. From ferromagnets they inherit straightforward ways to read out the magnetic state, especially in…
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Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to external fields, fast spin dynamics and rapid domain wall motion. From ferromagnets they inherit straightforward ways to read out the magnetic state, especially in compensated half metals, where electrons flow in only one spin channel. Here, we investigate domain structure in compensated half-metallic Mn2Ru0.5Ga films and assess their potential in domain wall motion-based spin-electronic devices. Our focus is on understanding and reducing domain wall pinning in unpatterned epitaxial thin films. Two modes of magnetic reversal, driven by nucleation or domain wall motion, are identified for different thin film deposition temperatures $(T_{dep})$. The magnetic aftereffect is analysed to extract activation volumes $(V^*)$, activation energies $(E_A)$, and their variation $(ΔE_A)$. The latter is decisive for the magnetic reversal regime, where domain wall motion dominated reversal (weak pinning) is found for $ΔE_A<0.2$ eV and nucleation dominated reversal (strong pinning) for $ΔE_A>0.5$ eV. A minimum $ΔE_A=28$ meV is found for $T_{dep}=290°$C. Prominent pinning sites are visualized by analysing virgin domain patterns after thermal demagnetization. In the sample investigated they have spacings of order 300 nm, which gives an upper limit of the track-width of spin-torque domain-wall motion-based devices.
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Submitted 17 December, 2020;
originally announced December 2020.
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Ultra-fast Double Pulse All-Optical Re-switching of a Ferrimagnet
Authors:
C. Banerjee,
K. Rode,
G. Atcheson,
S. Lenne,
P. Stamenov,
J. M. D. Coey,
J. Besbas
Abstract:
All-optical re-switching has been investigated in the half-metallic Heusler ferrimagnet Mn2Ru0.9Ga, where Mn atoms occupy two inequivalent sites in the XA-type structure. The effect of a second 200 fs 800 nm pump pulse that follows a first pulse, when both are above the threshold for switching, is studied as a function of t12, the time between them. The aims are to identify the physical mechanisms…
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All-optical re-switching has been investigated in the half-metallic Heusler ferrimagnet Mn2Ru0.9Ga, where Mn atoms occupy two inequivalent sites in the XA-type structure. The effect of a second 200 fs 800 nm pump pulse that follows a first pulse, when both are above the threshold for switching, is studied as a function of t12, the time between them. The aims are to identify the physical mechanisms involved and to determine the minimum time needed for re-switching. The time trajectory of the switching process on a plot of sublattice angular momentum, S4a vs S4c, is in three stages; When t < 0.1 ps, the sublattice moments are rapidly disordered, but not destroyed, while conserving net angular momentum via optical spin-wave excitations. This leads to transient parallel alignment of the residual Mn spins in the first quadrant. The net angular momentum associated with the majority sublattice then flips in about 2 ps, and a fully-reversed ferrimagnetic state is then established via the spin-lattice interaction, which allows re-switching provided t12 > 10 ps.
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Submitted 12 December, 2020;
originally announced December 2020.
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Magnetic order and magneto-transport in half-metallic ferrimagnetic Mn$_y$Ru$_x$Ga thin films
Authors:
K. E. Siewierska,
G. Atcheson,
A. Jha,
K. Esien,
R. Smith,
S. Lenne,
N. Teichert,
J. O'Brien,
J. M. D. Coey,
P. Stamenov,
K. Rode
Abstract:
The ruthenium content of half-metallic Mn$_2$Ru$_x$Ga thin films, with a biaxially-strained inverse Heusler structure, controls the ferrimagnetism that determines their magnetic and electronic properties. An extensive study of Mn$_y$Ru$_x$Ga films on MgO (100) substrates with $1.8 \leq y \leq 2.6$ and $x = 0.5$, 0.7 or 0.9, including crystallographic, magnetic order, magneto-transport and spin pol…
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The ruthenium content of half-metallic Mn$_2$Ru$_x$Ga thin films, with a biaxially-strained inverse Heusler structure, controls the ferrimagnetism that determines their magnetic and electronic properties. An extensive study of Mn$_y$Ru$_x$Ga films on MgO (100) substrates with $1.8 \leq y \leq 2.6$ and $x = 0.5$, 0.7 or 0.9, including crystallographic, magnetic order, magneto-transport and spin polarisation is undertaken to map specific composition-dependent properties in this versatile ternary system. A comparison of experimental densities obtained from X-ray reflectivity with calculated densities indicates full site occupancy for all compositions, which implies chemical disorder. All moments lie on the Slater-Pauling plot with slope 1 and all except $x = 0.5$, $y = 2.2$ exhibit magnetic compensation at \tcmp~below 500~K. The coercivity near \tcmp~exceeds 10~T. Increasing the Mn or Ru content raises \tcmp, but increasing Ru also decreases the spin polarisation determined by point contact Andreev reflection. Molecular field theory is used to model the temperature dependence of the net ferrimagnetic moment and three principal exchange coefficients are deduced. Marked differences in the shape of anomalous Hall and net magnetisation hysteresis loops are explained by substantial canting of the small net moment by up to \SI{40}{\degree} relative to the $c$-axis in zero field, which is a result of slight non-collinearity of the Mn$^{4c}$ sublattice moments due to competing intra-sublattice exchange interactions arising from antisite disorder and excess Mn in the unit cell. Consequences are reduced spin polarisation and an enhanced intrinsic contribution to the anomalous Hall effect. The systematic investigation of the physical properties as a function of $x$ and $y$ will guide the selection of compositions to meet the requirements for magnonic and spintronic MRG-based devices.
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Submitted 22 April, 2021; v1 submitted 10 December, 2020;
originally announced December 2020.
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Magnetization dynamics in synthetic antiferromagnets: Role of dynamical energy and mutual spin pum**
Authors:
S. Sorokin,
R. A. Gallardo,
C. Fowley,
K. Lenz,
A. Titova,
G. Y. P Atcheson,
G. Dennehy,
K. Rode,
J. Fassbender,
J. Lindner,
A. M. Deac
Abstract:
We investigate magnetization dynamics in asymmetric interlayer exchange coupled Py/Ru/Py trilayers using both vector network analyzer-based and electrically detected ferromagnetic resonance techniques. Two different ferromagnetic resonance modes, in-phase and out-of-phase, are observed across all three regimes of the static magnetization configurations, through antiparallel alignment at low fields…
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We investigate magnetization dynamics in asymmetric interlayer exchange coupled Py/Ru/Py trilayers using both vector network analyzer-based and electrically detected ferromagnetic resonance techniques. Two different ferromagnetic resonance modes, in-phase and out-of-phase, are observed across all three regimes of the static magnetization configurations, through antiparallel alignment at low fields, the spin-flop transition at intermediate fields, and parallel alignment at high fields. The nonmonotonic behavior of the modes as a function of the external field is explained in detail by analyzing the interlayer exchange and Zeeman energies and is found to be solely governed by the interplay of their dynamical components. In addition, the linewidths of both modes were determined across the three regimes and the different behaviors of the linewidths versus external magnetic field are attributed to mutual spin pum** induced in the samples. Interestingly, the difference between the linewidths of the out-of-phase and in-phase modes decreases at the spin-flop transition and is reversed between the antiparallel and parallel aligned magnetization states.
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Submitted 23 June, 2020;
originally announced June 2020.
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Helium Ion Microscopy for Reduced Spin Orbit Torque Switching Currents
Authors:
Peter Dunne,
Ciaran Fowley,
Gregor Hlawacek,
**u Kurian,
Gwenaël Atcheson,
Silviu Colis,
Niclas Teichert,
Bohdan Kundys,
M. Venkatesan,
Jürgen Lindner,
Alina Maria Deac,
Thomas M. Hermans,
J. M. D. Coey,
Bernard Doudin
Abstract:
Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the geometry and the intrinsic properties of the materials used, which are difficult to control locally. Here we demonstrate how focused helium ion beam irradiation c…
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Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the geometry and the intrinsic properties of the materials used, which are difficult to control locally. Here we demonstrate how focused helium ion beam irradiation can modulate the local magnetic anisotropy of a Co thin film at the microscopic scale. Real-time in-situ characterisation using the anomalous Hall effect showed up to an order of magnitude reduction of the magnetic anisotropy under irradiation, and using this, multi-level switching is demonstrated. The result is that spin-switching current densities, down to 800 kA cm$^{-2}$, can be achieved on predetermined areas of the film, without the need for lithography. The ability to vary critical currents spatially has implications not only for storage elements, but also neuromorphic and probabilistic computing.
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Submitted 14 September, 2020; v1 submitted 15 May, 2020;
originally announced May 2020.
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Sub-picosecond exchange-relaxation in the compensated ferrimagnet Mn$_2$Ru$_x$Ga
Authors:
G. Bonfiglio,
K. Rode,
G. Y. P. Atcheson,
P. Stamenov,
J. M. D. Coey,
A. V. Kimel,
Th. Rasing,
A. Kirilyuk
Abstract:
We study the demagnetization dynamics of the fully compensated half-metallic ferrimagnet Mn$_2$Ru$_x$Ga. While the two antiferromagnetically coupled sublattices are both composed of manganese, they exhibit different temperature dependencies due to their differing local environments. The sublattice magnetization dynamics triggered by femtosecond laser pulses are studied to reveal the roles played b…
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We study the demagnetization dynamics of the fully compensated half-metallic ferrimagnet Mn$_2$Ru$_x$Ga. While the two antiferromagnetically coupled sublattices are both composed of manganese, they exhibit different temperature dependencies due to their differing local environments. The sublattice magnetization dynamics triggered by femtosecond laser pulses are studied to reveal the roles played by the spin and intersublattice exchange. We find a two-step demagnetization process, similar to the well-established case of Gd(FeCo)$_3$, where the two Mn-sublattices have different demagnetization rates. The behaviour is analysed using a four-temperature model, assigning different temperatures to the two manganese spin baths. Even in this strongly exchange-coupled system, the two spin reservoirs have considerably different behaviour. The half-metallic nature and strong exchange coupling of Mn$_2$Ru$_x$Ga lead to spin angular momentum conservation at much shorter time scales than found for Gd(FeCo)$_3$ which suggests that low-power, sub-picosecond switching of the net moment of Mn$_2$Ru$_x$Ga is possible.
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Submitted 3 March, 2020;
originally announced March 2020.
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Magnetization dynamics of the compensated ferrimagnet $Mn_{2}Ru_{x}Ga$
Authors:
G. Bonfiglio,
K. Rode,
K. Siewerska,
J. Besbas,
G. Y. P. Atcheson,
P. Stamenov,
J. M. D. Coey,
A. V. Kimel,
Th. Rasing,
A. Kirilyuk
Abstract:
Here we study both static and time-resolved dynamic magnetic properties of the compensated ferrimagnet from room temperature down to 10K, thus crossing the magnetic compensation temperature $T_{M}$. The behaviour is analysed with a model of a simple collinear ferrimagnet with uniaxial anisotropy and site-specific gyromagnetic ratios. We find a maximum zero-applied-field resonance frequency of…
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Here we study both static and time-resolved dynamic magnetic properties of the compensated ferrimagnet from room temperature down to 10K, thus crossing the magnetic compensation temperature $T_{M}$. The behaviour is analysed with a model of a simple collinear ferrimagnet with uniaxial anisotropy and site-specific gyromagnetic ratios. We find a maximum zero-applied-field resonance frequency of $\sim$160GHz and a low intrinsic Gilbert dam** $α$$\sim$0.02, making it a very attractive candidate for various spintronic applications.
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Submitted 19 September, 2019;
originally announced September 2019.
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Single pulse all-optical toggle switching of magnetization without Gd: The example of Mn2RuxGa
Authors:
C. Banerjee,
N. Teichert,
K. Siewierska,
Z. Gercsi,
G. Atcheson,
P. Stamenov,
K. Rode,
J. M. D. Coey,
J. Besbas
Abstract:
Energy-efficient control of magnetization without the help of a magnetic field is a key goal of spintronics. Purely heat-induced single-pulse all-optical toggle switching has been demonstrated, but so far only in Gd based amorphous ferrimagnet films. In this work, we demonstrate toggle switching in the half-metallic compensated ferrimagnetic Heusler alloys Mn2RuxGa, which have two crystallographic…
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Energy-efficient control of magnetization without the help of a magnetic field is a key goal of spintronics. Purely heat-induced single-pulse all-optical toggle switching has been demonstrated, but so far only in Gd based amorphous ferrimagnet films. In this work, we demonstrate toggle switching in the half-metallic compensated ferrimagnetic Heusler alloys Mn2RuxGa, which have two crystallographically-inequivalent Mn sublattices. Moreover, we observe the switching at room temperature in samples that are immune to external magnetic fields in excess of 1 T, provided they exhibit compensation above room temperature. Observations of the effect in compensated ferrimagnets without Gd challenges our understanding of all-optical switching. The dynamic behavior indicates that Mn2RuxGa switches in 2 ps or less. Our findings widen the basis for fast optical switching of magnetization and break new ground for engineered materials that can be used for nonvolatile ultrafast switches using ultrashort pulses of light.
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Submitted 17 April, 2020; v1 submitted 12 September, 2019;
originally announced September 2019.
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Study of the Effect of Annealing on the Properties of Mn2RuxGa Thin Films
Authors:
K. E. Siewierska,
G. Atcheson,
K. Borisov,
M. Venkatesan,
K. Rode,
J. M. D. Coey
Abstract:
The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular magnetic anisotropy due to a small 1% tetragonal elongation induced by substrate strain. The main change on annealing is a modification in the compensation temperature…
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The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular magnetic anisotropy due to a small 1% tetragonal elongation induced by substrate strain. The main change on annealing is a modification in the compensation temperature, which first increases from 50 K for the as-deposited film to 185 K after annealing at 250 degree Celsius, and then falls to 140 K after annealing at 400 degree Celsius. There are minor changes in the atomic order, coercivity, resistivity and anomalous Hall effect (AHE), but the net magnetization measured by SQUID magnetometry with the field applied in-plane or perpendicular-to-the-plane changes more significantly. It saturates at 20 to 30 kA/m at room temperature, and a small soft component is seen in the perpendicular SQUID loops which is absent in the square AHE hysteresis loops. This is explained by the half-metallic nature of the compound; the AHE probes only the 4c Mn sublattice that provides the spin-polarized electrons at the Fermi level, whereas the SQUID measures the sum of the oppositely-aligned 4c and 4a sublattice magnetisations.
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Submitted 3 April, 2019;
originally announced April 2019.
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Giant spin-orbit torque in a single ferrimagnetic metal layer
Authors:
Simon Lenne,
Yong-Chang Lau,
Ajay Jha,
Gwenaël Y. P. Atcheson,
Roberto E. Troncoso,
Arne Brataas,
J. M. D. Coey,
Plamen Stamenov,
Karsten Rode
Abstract:
Antiferromagnets and compensated ferrimagnets offer opportunities to investigate spin dynamics in the 'terahertz gap' because their resonance modes lie in the 0.3 THz to 3 THz range. Despite some inherent advantages when compared to ferromagnets, these materials have not been extensively studied due to difficulties in exciting and detecting the high-frequency spin dynamics, especially in thin film…
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Antiferromagnets and compensated ferrimagnets offer opportunities to investigate spin dynamics in the 'terahertz gap' because their resonance modes lie in the 0.3 THz to 3 THz range. Despite some inherent advantages when compared to ferromagnets, these materials have not been extensively studied due to difficulties in exciting and detecting the high-frequency spin dynamics, especially in thin films. Here we show that spin-obit torque in a single layer of the highly spin-polarized compensated ferrimagnet Mn2RuxGa is remarkably efficient at generating spin-orbit fields μ_0H_eff, which approach 0.1x10-10 T m2/A in the low-current density limit -- almost a thousand times the Oersted field, and one to two orders of magnitude greater than the effective fields in heavy metal/ferromagnet bilayers. From an analysis of the harmonic Hall effect which takes account of the thermal contributions from the anomalous Nernst effect, we show that the antidam** component of the spin-orbit torque is sufficient to sustain self-oscillation. Our study demonstrates that spin electronics has the potential to underpin energy-frugal, chip-based solutions to the problem of ultra high-speed information transfer.
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Submitted 29 April, 2019; v1 submitted 11 March, 2019;
originally announced March 2019.
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Magnetocrystalline anisotropy and exchange probed by high-field anomalous Hall effect in fully-compensated half-metallic Mn2RuxGa thin films
Authors:
Ciarán Fowley,
Karsten Rode,
Yong-Chang Lau,
Naganivetha Thiyagarajah,
Davide Betto,
Kiril Borisov,
Gwenael Atcheson,
Erik Kampert,
Zhaosheng Wang,
Ye Yuan,
Shengqiang Zhou,
Jürgen Lindner,
Plamen Stamenov,
J. M. D. Coey,
Alina Maria Deac
Abstract:
Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation temperature 155 K, where the net magnetic moment is strictly zero, the anomalous Hall conductivity is 6673 $Ω^{-1}.m^{-1}$ and the coercivity exceeds 9 T. Molecular f…
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Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation temperature 155 K, where the net magnetic moment is strictly zero, the anomalous Hall conductivity is 6673 $Ω^{-1}.m^{-1}$ and the coercivity exceeds 9 T. Molecular field modelling is used to determine the intra- and inter-sublattice exchange constants and from the spin-flop transition we infer the anisotropy of the electrically active sublattice to be 216 kJ/m$^3$ and predict the magnetic resonances frequencies. Exchange and anisotropy are comparable and hard-axis applied magnetic fields result in a tilting of the magnetic moments from their collinear ground state. Our analysis is applicable to collinear ferrimagnetic half-metal systems.
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Submitted 2 October, 2018;
originally announced October 2018.
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Exchange coupling of a perpendicular ferromagnet to a half-metallic compensated ferrimagnet via a thin hafnium interlayer
Authors:
Kiril Borisov,
Gwenaël Atcheson,
Gavin D'Arcy,
Yong-Chang Lau,
J. M. D. Coey,
Karsten Rode
Abstract:
A thin Hafnium film is shown to act both as an effective diffusion barrier for manganese at a thickness of 0.7 nm, and as an effective exchange coupling layer in a sandwich structure with perpendicular magnetic anisotropy. The magnetic layers are Co$_{20}$Fe$_{60}$B$_{20}$ and the low moment ferrimagnet Mn$_2$Ru$_x$Ga (MRG). The coupling changes sign at the compensation temperature of MRG and the…
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A thin Hafnium film is shown to act both as an effective diffusion barrier for manganese at a thickness of 0.7 nm, and as an effective exchange coupling layer in a sandwich structure with perpendicular magnetic anisotropy. The magnetic layers are Co$_{20}$Fe$_{60}$B$_{20}$ and the low moment ferrimagnet Mn$_2$Ru$_x$Ga (MRG). The coupling changes sign at the compensation temperature of MRG and the exchange energy reaches 0.11 mJm$^{-2}$ for the thinnest Hf interlayers. Ruthenium, the usual metal of choice for coupling ferromagnetic layers in thin film heterostructures, cannot be used with the zero-moment half metal MRG because of Ru interdiffusion. Due to its large coercivity near compensation, the MRG can act as an effective source of exchange pinning.
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Submitted 8 May, 2017;
originally announced May 2017.
