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Optical drive of amplitude and phase modes in excitonic insulators
Authors:
Elahe Davari,
S. Samaneh Ataei,
Mehdi Kargarian
Abstract:
Motivated by recent interests in exploring excitonic condensate as the ground state of some narrow-bandgap semiconductors such as transition metal dichalcogenides and layered chalcogenide material Ta$_2$NiSe$_5$, in this work we theoretically study the dynamics of condensate in response to periodically driven laser fields with different polarizations and intensities. In particular, we consider las…
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Motivated by recent interests in exploring excitonic condensate as the ground state of some narrow-bandgap semiconductors such as transition metal dichalcogenides and layered chalcogenide material Ta$_2$NiSe$_5$, in this work we theoretically study the dynamics of condensate in response to periodically driven laser fields with different polarizations and intensities. In particular, we consider laser light beams with bicircular and circular polarizations breaking the time-revesal symmetry, and linear polarization. We show that the amplitude of the condensate oscillates in time during irradiating by light with a magnitude depending on the light intensity. The dynamics survives even after the light is switched off. The phase mode however changes linearly with time for a condensate originating from purely electronic correlations. We further show that in the presence of electron-phonon coupling the linear-in-time behavior is replaced by a harmonically oscillating behavior, a manifestation of gapped phase modes due to relative band charge symmetry breaking. Furthermore, we show that the primarily electronic and primarily lattice cases corresponding to strong and weak electron-phonon coupling, respectively, reveal distinct dynamics of the condensate, an observation which can modify the optical response of an excitonic insulator by stimulating amplitude and phase modes in the former case.
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Submitted 8 November, 2023; v1 submitted 7 November, 2023;
originally announced November 2023.
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Evidence for equilibrium excitons and exciton condensation in monolayer WTe2
Authors:
Bosong Sun,
Wen** Zhao,
Tauno Palomaki,
Zaiyao Fei,
Elliott Runburg,
Paul Malinowski,
Xiong Huang,
John Cenker,
Yong-Tao Cui,
Jiun-Haw Chu,
Xiaodong Xu,
S. Samaneh Ataei,
Daniele Varsano,
Maurizia Palummo,
Elisa Molinari,
Massimo Rontani,
David H. Cobden
Abstract:
A single monolayer of the layered semimetal WTe2 behaves as a two-dimensional topological insulator, with helical conducting edge modes surrounding a bulk state that becomes insulating at low temperatures. Here we present evidence that the bulk state has a very unusual nature, containing electrons and holes bound by Coulomb attraction (excitons) that spontaneously form in thermal equilibrium. On c…
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A single monolayer of the layered semimetal WTe2 behaves as a two-dimensional topological insulator, with helical conducting edge modes surrounding a bulk state that becomes insulating at low temperatures. Here we present evidence that the bulk state has a very unusual nature, containing electrons and holes bound by Coulomb attraction (excitons) that spontaneously form in thermal equilibrium. On cooling from room temperature to 100 K the conductivity develops a V-shaped dependence on electrostatic do**, while the chemical potential develops a ~43 meV step at the neutral point. These features are much sharper than is possible in an independent-electron picture, but they can be largely accounted for by positing that some of the electrons and holes are paired in equilibrium. Our calculations from first principles show that the exciton binding energy is larger than 100 meV and the radius as small as 4 nm, explaining their formation at high temperature and do** levels. Below 100 K more strongly insulating behavior is seen, suggesting that a charge-ordered state forms. The observed absence of charge density waves in this state appears surprising within an excitonic insulator picture, but we show that it can be explained by the symmetries of the exciton wave function. Monolayer WTe2 therefore presents an exceptional combination of topological properties and strong correlations over a wide temperature range.
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Submitted 26 October, 2021;
originally announced October 2021.
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Evidence of ideal excitonic insulator in bulk MoS2 under pressure
Authors:
S. Samaneh Ataei,
Daniele Varsano,
Elisa Molinari,
Massimo Rontani
Abstract:
Spontaneous condensation of excitons is a long sought phenomenon analogous to the condensation of Cooper pairs in a superconductor. It is expected to occur in a semiconductor at thermodynamic equilibrium if the binding energy of the excitons---electron (e) and hole (h) pairs interacting by Coulomb force---overcomes the band gap, giving rise to a new phase: the 'excitonic insulator' (EI). Transitio…
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Spontaneous condensation of excitons is a long sought phenomenon analogous to the condensation of Cooper pairs in a superconductor. It is expected to occur in a semiconductor at thermodynamic equilibrium if the binding energy of the excitons---electron (e) and hole (h) pairs interacting by Coulomb force---overcomes the band gap, giving rise to a new phase: the 'excitonic insulator' (EI). Transition metal dichalcogenides are excellent candidates for the EI realization because of reduced Coulomb screening, and indeed a structural phase transition was observed in few-layer systems. However, previous work could not disentangle to which extent the origin of the transition was in the formation of bound excitons or in the softening of a phonon. Here we focus on bulk MoS2 and demonstrate theoretically that at high pressure it is prone to the condensation of genuine excitons of finite momentum, whereas the phonon dispersion remains regular. Starting from first-principles many-body perturbation theory, we also predict that the self-consistent electronic charge density of the EI sustains an out-of-plane permanent electric dipole moment with an antiferroelectric texture in the layer plane: At the onset of the EI phase, those optical phonons that share the exciton momentum provide a unique Raman fingerprint for the EI formation. Finally, we identify such fingerprint in a Raman feature that was previously observed experimentally, thus providing direct spectroscopic confirmation of an ideal excitonic insulator phase in bulk MoS2 above 30 GPa.
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Submitted 4 November, 2020;
originally announced November 2020.
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Electronic and optical properties of doped TiO2 by many-body perturbation theory
Authors:
Michael O. Atambo,
Daniele Varsano,
Andrea Ferretti,
S. Samaneh Ataei,
Marilia J. Caldas,
Elisa Molinari,
Annabella Selloni
Abstract:
Do** is one of the most common strategies for improving the photocatalytic and solar energy conversion properties of TiO$_2$, hence an accurate theoretical description of the electronic and optical properties of doped TiO$_2$ is of both scientific and practical interest. In this work we use many-body perturbation theory techniques to investigate two typical n-type dopants, Niobium and Hydrogen,…
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Do** is one of the most common strategies for improving the photocatalytic and solar energy conversion properties of TiO$_2$, hence an accurate theoretical description of the electronic and optical properties of doped TiO$_2$ is of both scientific and practical interest. In this work we use many-body perturbation theory techniques to investigate two typical n-type dopants, Niobium and Hydrogen, in TiO$_2$ rutile. Using the GW approximation to determine band edges and defect energy levels, and the Bethe Salpeter equation for the calculation of the absorption spectra, we find that the defect energy levels form non-dispersive bands %associated with localized states lying $\simeq 2.2 eV$ above the top of the corresponding valence bands ($\simeq 0.9 eV$ below the conduction bands of the {\it pristine} material). The defect states are also responsible for the appearance of low energy absorption peaks that enhance the solar spectrum absorption of rutile. The spatial distributions of the excitonic wavefunctions associated with these low energy excitations are very different for the two dopants, suggesting a larger mobility of photoexcited electrons in Nb-TiO$_2$.
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Submitted 16 October, 2019; v1 submitted 10 November, 2018;
originally announced November 2018.
