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Combinatorial Large-area MoS2/Anatase-TiO2 interface: A Pathway to Emergent Optical and Opto-electronic Functionalities
Authors:
Tuhin Kumar Maji,
J R Aswin,
Subhrajit Mukherjee,
Rajath Alexander,
Anirban Mondal,
Sarthak Das,
R. K. Sharma,
N. K. Chakraborty,
K. Dasgupta,
Anjanashree M R Sharma,
Ranjit Hawalder,
Manjiri Pandey,
Akshay Naik,
Kausik Majumdar,
Samir Kumar Pal,
K V Adarsh,
Samit Kumar Ray,
Debjani Karmakar
Abstract:
Interface of transition metal dichalcogenide (TMDC) and high-k dielectric transition metal oxides (TMO) had triggerred umpteen discourses due to the indubitable impact of TMO in reducing the contact resistances and restraining the Fermi-level pinning for the metal-TMDC contacts. In the present work, we focus on the unresolved tumults of large-area TMDC/TMO interfaces, grown by adopting different t…
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Interface of transition metal dichalcogenide (TMDC) and high-k dielectric transition metal oxides (TMO) had triggerred umpteen discourses due to the indubitable impact of TMO in reducing the contact resistances and restraining the Fermi-level pinning for the metal-TMDC contacts. In the present work, we focus on the unresolved tumults of large-area TMDC/TMO interfaces, grown by adopting different techniques. Here, on a pulsed laser deposited (PLD) MoS2 thin film, a layer of TiO2 is grown by using both atomic layer deposition (ALD) and PLD. These two different techniques emanate TiO2 layers with different crystalline properties, thicknesses and interfacial morphologies, subsequently influencing the electronic and optical properties of the interfaces. In addition, they manifest a boost in the extent of p-type do** with increasing thickness of TiO2, as emerged after analyzing the core-level shifts of the X-ray photoelectron spectra (XPS). Density functional analysis of the MoS2/Anatase-TiO2 interfaces, for pristine and in presence of a wide range of interfacial defects, could explain the interdependence of do** and the terminating atomic-surface of TiO2 on MoS2. The optical properties of the interface, encompassing the photoluminescence, transient absorption and z-scan two-photon absorption indicate the presence of defect-induced localized mid-gap levels in MoS2/TiO2 (PLD), resulting quenched exciton signals. On the contrary, the relatively defect-free interface in MoS2/TiO2 (ALD) demonstrates a clear presence of both A and B excitons of MoS2. From the investigation of optical properties, we indicate that MoS2/TiO2 (PLD) interface may act as a promising saturable absorber. Moreover, MoS2/TiO2 (PLD) interface had resulted a better photo-transport. A potential application of MoS2/TiO2 (PLD) is demonstrated by the fabrication of a p-type photo-transistor with the ionic-gel top gate.
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Submitted 28 January, 2021;
originally announced January 2021.
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Role of thermal and photo annealing on nonlinear optical response of Ge30Se55Bi15 thin films
Authors:
Adyasha Aparimita,
Pritam Khan,
J. R. Aswin,
K. V Adarsh,
R. Naik
Abstract:
In this article, we employed nanosecond Z-scan technique to demonstrate the nonlinear optical response in Ge30Se55Bi15 thin films after thermal and photo annealing. The intensity dependent open aperture Z-scan traces reveal that for all the samples, i.e. as-prepared, thermal and photo annealed thin films exhibit reverse saturable absorption (RSA). The experimental results indicate that both therma…
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In this article, we employed nanosecond Z-scan technique to demonstrate the nonlinear optical response in Ge30Se55Bi15 thin films after thermal and photo annealing. The intensity dependent open aperture Z-scan traces reveal that for all the samples, i.e. as-prepared, thermal and photo annealed thin films exhibit reverse saturable absorption (RSA). The experimental results indicate that both thermal and photo annealing can be efficiently used to enhance the nonlinear absorption coefficient compared to as-prepared sample. We further demonstrate that beta value of thermally annealed and as-prepared samples increase significantly at higher intensities. On the contrary, beta for photo annealed sample does not exhibit appreciable changes against the intensity variation.
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Submitted 2 February, 2020;
originally announced February 2020.
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Quantification of nonlinear absorption in ternary As-Sb-Se chalcogenide glasses
Authors:
P. Pradhan,
Pritam Khan,
J. R. Aswin,
K. V. Adarsh,
R. Naik,
N. Das,
A. K. Panda
Abstract:
In this article, we studied intensity dependent third order nonlinear optical response in ternary As40Sb7Se53 and As40Sb10Se50 chalcogenide glasses by employing nanosecond Z-scan technique. At low intensity, we observed saturable absorption in As40Sb7Se53 which makes a remarkable transition to reverse saturable absorption at higher intensities. On the other hand, when the Sb concentration increase…
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In this article, we studied intensity dependent third order nonlinear optical response in ternary As40Sb7Se53 and As40Sb10Se50 chalcogenide glasses by employing nanosecond Z-scan technique. At low intensity, we observed saturable absorption in As40Sb7Se53 which makes a remarkable transition to reverse saturable absorption at higher intensities. On the other hand, when the Sb concentration increased in As40Sb10Se50, saturable absorption disappears and the sample exhibits only two-photon absorption. Experimental results further indicate that the strong two-photon absorption in our samples can be exploited to fabricate high performance solid state optical limiting devices for next generation all-optical network.
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Submitted 17 December, 2018;
originally announced December 2018.
