Showing 1–50 of 78 results for author: Astakhov, V

Effect of Helium Ion Implantation on 3C-SiC Nanomechanical String Resonators

Authors: Philipp Bredol, Felix David, Nagesh S. Jagtap, Yannick S. Klaß, Georgy V. Astakhov, Artur Erbe, Eva M. Weig

Abstract: Hybrid quantum devices enable novel functionalities by combining the benefits of different subsystems. Particularly, point defects in nanomechanical resonators made of diamond or silicon carbide (SiC) have been proposed for precise magnetic field sensing and as versatile quantum transducers. However, the realization of a hybrid system may involve tradeoffs in the performance of the constituent sub… ▽ More Hybrid quantum devices enable novel functionalities by combining the benefits of different subsystems. Particularly, point defects in nanomechanical resonators made of diamond or silicon carbide (SiC) have been proposed for precise magnetic field sensing and as versatile quantum transducers. However, the realization of a hybrid system may involve tradeoffs in the performance of the constituent subsystems. In a spin-mechanical system, the mechanical properties of the resonator may suffer from the presence of engineered defects in the crystal lattice. This may severely restrict the performance of the resulting device and needs to be carefully explored. Here, we focus on the impact of defects on high Q nanomechanical string resonators made of pre-stressed 3C-SiC grown on Si(111). We use helium ion implantation to create point defects and study their accumulated effect on the mechanical performance. Using Euler-Bernoulli beam theory, we present a method to determine Young's modulus and the pre-stress of the strings. We find that Young's modulus is not modified by implantation. Under implantation doses relevant for single defect or defect ensemble generation, both tensile stress and dam** rate also remain unaltered. For higher implantation dose, both exhibit a characteristic change. △ Less

Submitted 3 May, 2024; originally announced May 2024.

Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams

Authors: M. Hollenbach, N. Klingner, P. Mazarov, W. Pilz, A. Nadzeyka, F. Mayer, N. V. Abrosimov, L. Bischoff, G. Hlawacek, M. Helm, G. V. Astakhov

Abstract: Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creat… ▽ More Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creation of two types of quantum emitters in silicon, the W and G centers. Furthermore, we apply a multi-step implantation protocol for the programmable activation of the G centers with sub-100- nm resolution. This approach provides a route for significant enhancement of the creation yield of single G centers in carbon-free silicon wafers. Our experimental demonstration is an important step towards nanoscale engineering of telecom quantum emitters in silicon of high crystalline quality and isotope purity. △ Less

Submitted 30 April, 2024; originally announced April 2024.

Comments: 7 pages, 5 figures

Technical Design Report of the Spin Physics Detector at NICA

Authors: The SPD Collaboration, V. Abazov, V. Abramov, L. Afanasyev, R. Akhunzyanov, A. Akindinov, I. Alekseev, A. Aleshko, V. Alexakhin, G. Alexeev, L. Alimov, A. Allakhverdieva, A. Amoroso, V. Andreev, V. Andreev, E. Andronov, Yu. Anikin, S. Anischenko, A. Anisenkov, V. Anosov, E. Antokhin, A. Antonov, S. Antsupov, A. Anufriev, K. Asadova , et al. (392 additional authors not shown)

Abstract: The Spin Physics Detector collaboration proposes to install a universal detector in the second interaction point of the NICA collider under construction (JINR, Dubna) to study the spin structure of the proton and deuteron and other spin-related phenomena using a unique possibility to operate with polarized proton and deuteron beams at a collision energy up to 27 GeV and a luminosity up to… ▽ More The Spin Physics Detector collaboration proposes to install a universal detector in the second interaction point of the NICA collider under construction (JINR, Dubna) to study the spin structure of the proton and deuteron and other spin-related phenomena using a unique possibility to operate with polarized proton and deuteron beams at a collision energy up to 27 GeV and a luminosity up to $10^{32}$ cm$^{-2}$ s$^{-1}$. As the main goal, the experiment aims to provide access to the gluon TMD PDFs in the proton and deuteron, as well as the gluon transversity distribution and tensor PDFs in the deuteron, via the measurement of specific single and double spin asymmetries using different complementary probes such as charmonia, open charm, and prompt photon production processes. Other polarized and unpolarized physics is possible, especially at the first stage of NICA operation with reduced luminosity and collision energy of the proton and ion beams. This document is dedicated exclusively to technical issues of the SPD setup construction. △ Less

Submitted 28 May, 2024; v1 submitted 12 April, 2024; originally announced April 2024.

Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields

Authors: A. Hernández-Mínguez, A. V. Poshakinskiy, M. Hollenbach, P. V. Santos, G. V. Astakhov

Abstract: The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy ($\mathrm{V_{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have been performed in external magnetic fields applied along the symmetry axis. Here, we find that the application of weak magnetic fields perpendicular to t… ▽ More The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy ($\mathrm{V_{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have been performed in external magnetic fields applied along the symmetry axis. Here, we find that the application of weak magnetic fields perpendicular to the symmetry axis leads to nontrivial behavior caused by dynamical reorientation of the $\mathrm{V_{Si}}$ spin multipole under optical excitation. Particularly, we observe the inversion of the quadrupole spin polarization in the excited state and appearance of the dipole spin polarization in the ground state. The latter is much higher than thermal polarization and cannot be induced solely by optical excitation. Our theoretical calculations reproduce well all sharp features in the spin resonance spectra, and shine light on the complex dynamics of spin multipoles in these kinds of solid-state systems. △ Less

Submitted 11 April, 2024; originally announced April 2024.

Comments: 6 pages, 4 figures

The BM@N spectrometer at the NICA accelerator complex

Authors: S. Afanasiev, G. Agakishiev, E. Aleksandrov, I. Aleksandrov, P. Alekseev, K. Alishina, V. Astakhov, E. Atkin, T. Aushev, V. Azorskiy, V. Babkin, N. Balashov, R. Barak, A. Baranov, D. Baranov, N. Baranova, N. Barbashina, M. Baznat, S. Bazylev, M. Belov, D. Blau, V. Bocharnikov, G. Bogdanova, A. Bolozdynya, E. Bondar , et al. (187 additional authors not shown)

Abstract: BM@N (Baryonic Matter at Nuclotron) is the first experiment operating and taking data at the Nuclotron/NICA ion-accelerating complex.The aim of the BM@N experiment is to study interactions of relativistic heavy-ion beams with fixed targets. We present a technical description of the BM@N spectrometer including all its subsystems. BM@N (Baryonic Matter at Nuclotron) is the first experiment operating and taking data at the Nuclotron/NICA ion-accelerating complex.The aim of the BM@N experiment is to study interactions of relativistic heavy-ion beams with fixed targets. We present a technical description of the BM@N spectrometer including all its subsystems. △ Less

Submitted 11 March, 2024; v1 submitted 29 December, 2023; originally announced December 2023.

Comments: 34 pages, 47 figures, 6 tables

Ultralong-term high-density data storage with atomic defects in SiC

Authors: M. Hollenbach, C. Kasper, D. Erb, L. Bischoff, G. Hlawacek, H. Kraus, W. Kada, T. Ohshima, M. Helm, S. Facsko, V. Dyakonov, G. V. Astakhov

Abstract: There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we… ▽ More There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation. △ Less

Submitted 28 October, 2023; originally announced October 2023.

Comments: 8 pages, 4 figures

Journal ref: Adv. Funct. Mater. 23, 2313413 (2024)

Extending the coherence time of spin defects in hBN enables advanced qubit control and quantum sensing

Authors: Roberto Rizzato, Martin Schalk, Stephan Mohr, Joachim P. Leibold, Jens C. Hermann, Fleming Bruckmaier, Peirui Ji, Georgy V. Astakhov, Ulrich Kentsch, Manfred Helm, Andreas V. Stier, Jonathan J. Finley, Dominik B. Bucher

Abstract: Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers (${V_B}^-$) in hBN have shown promise as sensors of temperature, pressure, and static magnetic fields. However, the short spin coherence time of this defect currently l… ▽ More Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers (${V_B}^-$) in hBN have shown promise as sensors of temperature, pressure, and static magnetic fields. However, the short spin coherence time of this defect currently limits its scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by nearly two orders of magnitude, approaching the fundamental $T_1$ relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect electromagnetic signals in the MHz range with sub-Hz resolution. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures. △ Less

Submitted 24 December, 2022; originally announced December 2022.

Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC

Authors: T. Vasselon, A. Hernández-Mínguez, M. Hollenbach, G. V. Astakhov, P. V. Santos

Abstract: The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the cubic (V2) local crystallographic environments of the 4H-SiC host. While the spin of the V2 center can be efficiently manipulated by optically detecte… ▽ More The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the cubic (V2) local crystallographic environments of the 4H-SiC host. While the spin of the V2 center can be efficiently manipulated by optically detected magnetic resonance at room temperature, spin control of the V1 centers above cryogenic temperatures has so far remained elusive. Here, we show that the dynamic strain of surface acoustic waves can overcome this limitation and efficiently excite magnetic resonances of V1 centers up to room temperature. Based on the width and temperature dependence of the acoustically induced spin resonances of the V1 centers, we attribute them to transitions between spin sublevels in the excited state. The acoustic spin control of both kinds of $\mathrm{V}_\mathrm{Si}$ centers in their excited states opens new ways for applications in quantum technologies based on spin-optomechanics. △ Less

Submitted 25 August, 2023; v1 submitted 15 December, 2022; originally announced December 2022.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. Appl. 20, 034017 (2023)

Milliwatt terahertz harmonic generation from topological insulator metamaterials

Authors: Klaas-Jan Tielrooij, Alessandro Principi, David Saleta Reig, Alexander Block, Sebin Varghese, Steffen Schreyeck, Karl Brunner, Grzegorz Karczewski, Igor Ilyakov, Oleksiy Ponomaryov, Thales V. A. G. de Oliveira, Min Chen, Jan-Christoph Deinert, Carmen Gomez Carbonell, Sergio O. Valenzuela, Laurens W. Molenkamp, Tobias Kiessling, Georgy V. Astakhov, Sergey Kovalev

Abstract: Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at… ▽ More Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at increasing incident powers, as shown recently for graphene. Here, we demonstrate room-temperature terahertz harmonic generation in a Bi$_2$Se$_3$ topological insulator and topological-insulator-grating metamaterial structures with surface-selective terahertz field enhancement. We obtain a third-harmonic power approaching the milliwatt range for an incident power of 75 mW - an improvement by two orders of magnitude compared to a benchmarked graphene sample. We establish a framework in which this exceptional performance is the result of thermodynamic harmonic generation by the massless topological surface states, benefiting from ultrafast dissipation of electronic heat via surface-bulk Coulomb interactions. These results are an important step towards on-chip terahertz (opto)electronic applications. △ Less

Submitted 1 November, 2022; originally announced November 2022.

Journal ref: Light Sci Appl 11, 315 (2022)

Emitter-Optomechanical Interaction in Ultra-High-Q hBN Nanocavities

Authors: Chenjiang Qian, Viviana Villafañe, Martin Schalk, Georgy V. Astakhov, Ulrich Kentsch, Manfred Helm, Pedro Soubelet, Andreas V. Stier, Jonathan J. Finley

Abstract: Integrating quantum emitters into nanocavities which simultaneously couple to the photonic and mechanical modes is critical for interfacing electron spins, photons and phonons in the cavity QED system. Here, we investigate the interaction between the charged boron vacancy $V_B^-$, ultra-high-Q ($\sim10^5$) cavity photonic modes and local phonon modes. A pronounced asymmetry is observed in the emis… ▽ More Integrating quantum emitters into nanocavities which simultaneously couple to the photonic and mechanical modes is critical for interfacing electron spins, photons and phonons in the cavity QED system. Here, we investigate the interaction between the charged boron vacancy $V_B^-$, ultra-high-Q ($\sim10^5$) cavity photonic modes and local phonon modes. A pronounced asymmetry is observed in the emission spectrum for cavities with Q-factor above a threshold of 10$^4$. Similar asymmetries are not observed for cavities without $V_B^-$ centers. To explain our findings, we model the system with phonon-induced light-matter coupling based on $V_B^-$ centers, and compare to the Jaynes-Cummings model for usual emitters. Our results reveal that the multipartite interplay arises during the light-matter coupling of $V_B^-$ centers, illustrating that it is phonon-induced, rather than being caused by thermal population of phonon modes. Such emitter-optomechanical interaction between different photon ($V_B^-$ emission, cavity photonic) and phonon ($V_B^-$ phonon, cavity mechanical) modes provides a novel system to interface spin defects, photons and phonons in condensed matters. △ Less

Submitted 31 January, 2023; v1 submitted 30 September, 2022; originally announced October 2022.

Nonlinear magnon control of atomic spin defects in scalable quantum devices

Authors: Mauricio Bejarano, Francisco J. T. Goncalves, Toni Hache, Michael Hollenbach, Christopher Heins, Tobias Hula, Lukas Körber, Jakob Heinze, Yonder Berencén, Manfred Helm, Jürgen Fassbender, Georgy V. Astakhov, Helmut Schultheiss

Abstract: Ongoing efforts in quantum engineering have recently focused on integrating magnonics into hybrid quantum architectures for novel functionalities. While hybrid magnon-quantum spin systems have been demonstrated with nitrogen-vacancy (NV) centers in diamond, they have remained elusive on the technologically promising silicon carbide (SiC) platform mainly due to difficulties in finding a resonance o… ▽ More Ongoing efforts in quantum engineering have recently focused on integrating magnonics into hybrid quantum architectures for novel functionalities. While hybrid magnon-quantum spin systems have been demonstrated with nitrogen-vacancy (NV) centers in diamond, they have remained elusive on the technologically promising silicon carbide (SiC) platform mainly due to difficulties in finding a resonance overlap between the magnonic system and the spin centers. Here we circumvent this challenge by harnessing nonlinear magnon scattering processes in a magnetic vortex to access magnon modes that overlap in frequency with silicon-vacancy ($\textrm{V}_{\mathrm{Si}}$) spin transitions in SiC. Our results offer a route to develop hybrid systems that benefit from marrying the rich nonlinear dynamics of magnons with the advantageous properties of SiC for scalable quantum technologies. △ Less

Submitted 18 August, 2022; originally announced August 2022.

Comments: 17 pages, 4 figures

Wafer-scale nanofabrication of telecom single-photon emitters in silicon

Authors: M. Hollenbach, N. Klingner, N. S. Jagtap, L. Bischoff, C. Fowley, U. Kentsch, G. Hlawacek, A. Erbe, N. V. Abrosimov, M. Helm, Y. Berencén, G. V. Astakhov

Abstract: A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been re… ▽ More A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with a probability exceeding 50%. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm. △ Less

Submitted 27 April, 2022; originally announced April 2022.

Comments: 8 pages, 4 figures

Journal ref: Nat. Commun. 13, 7683 (2022)

Superradiance of Spin Defects in Silicon Carbide for Maser Applications

Authors: Andreas Gottscholl, Maximilian Wagenhöfer, Manuel Klimmer, Selina Scherbel, Christian Kasper, Valentin Baianov, Georgy V. Astakhov, Vladimir Dyakonov, Andreas Sperlich

Abstract: Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy… ▽ More Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy (V$_{Si}$) defects in silicon carbide (SiC) to overcome the microwave generation threshold and discuss the advantages of this highly developed spin hosting material. To achieve population inversion, we optically pump the V$_{Si}$ into their $m_S$ = $\pm$1/2 spin sub-states and additionally tune the Zeeman energy splitting by applying an external magnetic field. In this way, the prerequisites for stimulated emission by means of resonant microwaves in the 10 GHz range are fulfilled. On the way to realising a maser, we were able to systematically solve a series of subtasks that improved the underlying relevant physical parameters of the SiC samples. Among others, we investigated the pump efficiency as a function of the optical excitation wavelength and the angle between the magnetic field and the defect symmetry axis in order to boost the population inversion factor, a key figure of merit for the targeted microwave oscillator. Furthermore, we developed a high-Q sapphire microwave resonator (Q ~ 10$^4$ - 10$^5$) with which we find superradiant stimulated microwave emission. In summary, SiC with optimized spin defect density and thus spin relaxation rates is well on its way of becoming a suitable maser gain material with wide-ranging applications. △ Less

Submitted 6 May, 2022; v1 submitted 1 March, 2022; originally announced March 2022.

Comments: 15 pages, 4 figures

Journal ref: Front. Photonics 3:886354 (2022)

Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity Enhanced Emission

Authors: Chenjiang Qian, Viviana Villafañe, Martin Schalk, G. V. Astakhov, Ulrich Kentsch, Manfred Helm, Pedro Soubelet, Nathan P. Wilson, Roberto Rizzato, Stephan Mohr, Alexander W. Holleitner, Dominik B. Bucher, Andreas V. Stier, JonathanJ. Finley

Abstract: Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q n… ▽ More Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to $V_B^-$. Our observations are consistent with the spatial redistribution of $V_B^-$ emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using $V_B^-$ as cavity spin-photon interfaces. △ Less

Submitted 22 June, 2022; v1 submitted 22 February, 2022; originally announced February 2022.

Journal ref: Nano Lett. 22(13), 5137-5142 (2022)

Status and initial physics performance studies of the MPD experiment at NICA

Authors: MPD Collaboration, V. Abgaryan, R. Acevedo Kado, S. V. Afanasyev, G. N. Agakishiev, E. Alpatov, G. Altsybeev, M. Alvarado Hernández, S. V. Andreeva, T. V. Andreeva, E. V. Andronov, N. V. Anfimov, A. A. Aparin, V. I. Astakhov, E. Atkin, T. Aushev, G. S. Averichev, A. V. Averyanov, A. Ayala, V. A. Babkin, T. Babutsidze, I. A. Balashov, A. Bancer, M. Yu. Barabanov, D. A. Baranov , et al. (454 additional authors not shown)

Abstract: The Nuclotron-base Ion Collider fAcility (NICA) is under construction at the Joint Institute for Nuclear Research (JINR), with commissioning of the facility expected in late 2022. The Multi-Purpose Detector (MPD) has been designed to operate at NICA and its components are currently in production. The detector is expected to be ready for data taking with the first beams from NICA. This document pro… ▽ More The Nuclotron-base Ion Collider fAcility (NICA) is under construction at the Joint Institute for Nuclear Research (JINR), with commissioning of the facility expected in late 2022. The Multi-Purpose Detector (MPD) has been designed to operate at NICA and its components are currently in production. The detector is expected to be ready for data taking with the first beams from NICA. This document provides an overview of the landscape of the investigation of the QCD phase diagram in the region of maximum baryonic density, where NICA and MPD will be able to provide significant and unique input. It also provides a detailed description of the MPD set-up, including its various subsystems as well as its support and computing infrastructures. Selected performance studies for particular physics measurements at MPD are presented and discussed in the context of existing data and theoretical expectations. △ Less

Submitted 16 February, 2022; originally announced February 2022.

Comments: 53 pages, 68 figures, submitted as a Review article to EPJA

Journal ref: Eur. Phys. J. A 58, 140 (2022)

A photonic platform hosting telecom photon emitters in silicon

Authors: Michael Hollenbach, Nagesh S. Jagtap, Ciarán Fowley, Juan Baratech, Verónica Guardia-Arce, Ulrich Kentsch, Anna Eichler-Volf, Nikolay V. Abrosimov, Artur Erbe, ChaeHo Shin, Hakseong Kim, Manfred Helm, Woo Lee, Georgy V. Astakhov, Yonder Berencén

Abstract: Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a… ▽ More Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a photonic platform consisting of silicon nanopillars. We developed a CMOS-compatible nanofabrication method, enabling the production of thousands of individual nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm-G center emission along individual pillars accompanied by improved brightness, photoluminescence signal-to-noise ratio and photon extraction efficiency compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits. △ Less

Submitted 5 December, 2021; originally announced December 2021.

Comments: 6 pages, 4 figures

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Authors: Charles Babin, Rainer Stöhr, Naoya Morioka, Tobias Linkewitz, Timo Steidl, Raphael Wörnle, Di Liu, Erik Hesselmeier, Vadim Vorobyov, Andrej Denisenko, Mario Hentschel, Christian Gobert, Patrick Berwian, Georgy V. Astakhov, Wolfgang Knolle, Sridhar Majety, Pranta Saha, Marina Radulaski, Nguyen Tien Son, Jawad Ul-Hassan, Florian Kaiser, Jörg Wrachtrup

Abstract: Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In par… ▽ More Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution based on cavity quantum electrodynamics. △ Less

Submitted 29 September, 2021; v1 submitted 10 September, 2021; originally announced September 2021.

Comments: 18 pages, 4 figures

Journal ref: Nature Materials 21, 67-73 (2022)

Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface

Authors: I. D. Breev, Z. Shang, A. V. Poshakinskiy, H. Singh, Y. Berencén, M. Hollenbach, S. S. Nagalyuk, E. N. Mokhov, R. A. Babunts, P. G. Baranov, D. Suter, S. A. Tarasenko, G. V. Astakhov, A. N. Anisimov

Abstract: Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coheren… ▽ More Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coherent silicon vacancy spin qubits, a drawback for their practical application is the unfavorable ordering of the electronic levels in the optically excited state. Here, we demonstrate that due to polytypism of SiC, a particular type of silicon vacancy qubits in 6H-SiC possesses an unusual inverted fine structure. This results in the directional emission of light along the hexagonal crystallographic axis, making photon extraction more efficient and integration into photonic structures technologically straightforward. From the angular polarization dependencies of the emission, we reconstruct the spatial symmetry and determine the optical selection rules depending on the local deformation and spin-orbit interaction, enabling direct implementation of robust spin-photon entanglement schemes. Furthermore, the inverted fine structure leads to unexpected behavior of the spin readout contrast. It vanishes and recovers with lattice cooling due to two competing optical spin pum** mechanisms. Our experimental and theoretical approaches provide a deep insight into the optical and spin properties of atomic-scale qubits in SiC required for quantum communication and distributed quantum information processing. △ Less

Submitted 14 July, 2021; originally announced July 2021.

Comments: 11 pages, 7 figures

Acoustically induced coherent spin trap**

Authors: A. Hernández-Mínguez, A. V. Poshakinskiy, M. Hollenbach, P. V. Santos, G. V. Astakhov

Abstract: Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GSs) of atomic-scale, color centre qubits, which are forbidden in case of the more frequently used electromagnetic fields. Here, we demonstrate that str… ▽ More Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GSs) of atomic-scale, color centre qubits, which are forbidden in case of the more frequently used electromagnetic fields. Here, we demonstrate that strain-induced spin interactions within their optically excited state (ES) can exceed by two orders of magnitude the ones within the GS. This gives rise to novel physical phenomena, such as the acoustically induced coherent spin trap** (CST) unvealed here. The CST manifests itself as the spin preservation along one particular direction under the coherent drive of the GS and ES by the same acoustic field. Our findings provide new opportunities for the coherent control of spin qubits with dynamically generated strain fields that can lead towards the realization of future spin-acoustic quantum devices. △ Less

Submitted 7 April, 2021; originally announced April 2021.

Comments: 6 pages, 4 figures, and Supplementary Information

Journal ref: Sci. Adv. 7, eabj5030 (2021)

Stress-controlled zero-field spin splitting in silicon carbide

Authors: I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva, S. S. Nagalyuk, E. N. Mokhov, R. Hübner, G. V. Astakhov, P. G. Baranov, A. N. Anisimov

Abstract: We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 cent… ▽ More We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be $0.75 \, \mathrm{GHz}$ for the V1/V3 centers and $0.5 \, \mathrm{GHz}$ for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation. △ Less

Submitted 8 December, 2020; originally announced December 2020.

Comments: 13 pages, 3 figures

Journal ref: Appl. Phys. Lett. 118, 084003 (2021)

Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy

Authors: I. D. Breev, K. V. Likhachev, V. V. Yakovleva, R. Hübner, G. V. Astakhov, P. G. Baranov, E. N. Mokhov, A. N. Anisimov

Abstract: We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spatial stress and strain distribution in these heterostructures using confocal Raman spectroscopy. We measure the spectral shifts of various vibrational Raman modes across the heterointerface and along the entire depth of t… ▽ More We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spatial stress and strain distribution in these heterostructures using confocal Raman spectroscopy. We measure the spectral shifts of various vibrational Raman modes across the heterointerface and along the entire depth of the 4H- and 6H-SiC layers. Using the earlier experimental prediction for the phonon-deformation potential constants, we determine the stress tensor components in SiC as a function of the distance from the AlN/SiC heterointerface. In spite that the lattice parameter of SiC is smaller than that of AlN, the SiC layers are compressively strained at the heterointerface. This counterintuitive behavior is explained by different coefficients of thermal expansion of SiC and AlN when the heterostructures are cooled from growth to room temperature. The compressive stress values are maximum at the heterointerface, approaching one GPa, and relaxes to the equilibrium value on the scale of several tens of microns from the heterointerface. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: 19 pages, 6 figures, 3 table

Journal ref: Journal of Applied Physics 129, 055304 (2021)

Map** the stray fields of a nanomagnet using spin qubits in SiC

Authors: M. Bejarano, F. J. T. Goncalves, M. Hollenbach, T. Hache, T. Hula, Y. Berencén, J. Fassbender, M. Helm, G. V. Astakhov, H. Schultheiss

Abstract: We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patt… ▽ More We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patterning of the antenna is done to ensure that the driving microwave fields are delivered locally and more efficiently compared to conventional, millimeter-sized circuits. A clear difference in the resonance frequency of the spin centers in SiC is observed at various distances to the magnetic element, for two different magnetic states. Our results offer a wafer-scale platform to develop hybrid magnon-quantum applications by deploying local microwave fields and the stray field landscape at the micrometer lengthscale. △ Less

Submitted 1 September, 2020; originally announced September 2020.

Comments: 4 pages, 4 figures, submitted to APL

Engineering telecom single-photon emitters in silicon for scalable quantum photonics

Authors: M. Hollenbach, Y. Berencén, U. Kentsch, M. Helm, G. V. Astakhov

Abstract: We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the car… ▽ More We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the $^{12}$C and $^{28}$Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on a SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology. △ Less

Submitted 21 August, 2020; originally announced August 2020.

Comments: 8 pages, 5 figures

Journal ref: Opt. Express 28, 26111 (2020)

Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature

Authors: A. Hernández-Mínguez, A. V. Poshakinskiy, M. Hollenbach, P. V. Santos, G. V. Astakhov

Abstract: We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $\pm$1 and $\pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the st… ▽ More We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $\pm$1 and $\pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the static magnetic field orientation, which is attributed to the intrinsic symmetry of the acoustic fields combined with the peculiar properties of a half-integer spin system. We develop a microscopic model of the spin-acoustic interaction, which describes our experimental data without fitting parameters. Furthermore, we predict that traveling surface waves lead to a chiral spin-acoustic resonance, which changes upon magnetic field inversion. These results establish silicon carbide as a highly-promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature. △ Less

Submitted 2 May, 2020; originally announced May 2020.

Comments: 6 pages, 3 figures, Supplemental Information

Journal ref: Phys. Rev. Lett. 125, 107702 (2020)

Local vibrational modes of Si vacancy spin qubits in SiC

Authors: Z. Shang, A. Hashemi, Y. Berencén, H. -P. Komsa, P. Erhart, A. V. Krasheninnikov, G. V. Astakhov

Abstract: Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacan… ▽ More Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacancy spin qubits in as-grown 4H-SiC. We apply the resonant microwave field to isolate the contribution from one particular type of defects, the so-called V2 center, and observe the zero-phonon line together with seven equally-separated phonon replicas. Furthermore, we present first-principles calculations of the photoluminescence lineshape, which are in excellent agreement with our experimental data. To boost up the calculation accuracy and decrease the computation time, we extract the force constants using machine learning algorithms. This allows us to identify dominant modes in the lattice vibrations coupled to an excited electron during optical emission in the Si vacancy. The resonance phonon energy of 36 meV and the Debye-Waller factor of about 6% are obtained. We establish experimentally that the activation energy of the optically-induced spin polarization is given by the local vibrational energy. Our findings give insight into the coupling of electronic states to vibrational modes in SiC spin qubits, which is essential to predict their spin, optical, mechanical and thermal properties. The approach described can be applied to a large variety of spin defects with spectrally overlapped contributions in SiC as well as in other 3D and 2D materials. △ Less

Submitted 4 February, 2020; v1 submitted 31 January, 2020; originally announced February 2020.

Comments: 9 pages, 6 figures, corrected references

Journal ref: Phys. Rev. B 101, 144109 (2020)

Technical Design Report for the PANDA Endcap Disc DIRC

Authors: Panda Collaboration, F. Davi, W. Erni, B. Krusche, M. Steinacher, N. Walford, H. Liu, Z. Liu, B. Liu, X. Shen, C. Wang, J. Zhao, M. Albrecht, T. Erlen, F. Feldbauer, M. Fink, V. Freudenreich, M. Fritsch, F. H. Heinsius, T. Held, T. Holtmann, I. Keshk, H. Koch, B. Kopf, M. Kuhlmann , et al. (441 additional authors not shown)

Abstract: PANDA (anti-Proton ANnihiliation at DArmstadt) is planned to be one of the four main experiments at the future international accelerator complex FAIR (Facility for Antiproton and Ion Research) in Darmstadt, Germany. It is going to address fundamental questions of hadron physics and quantum chromodynamics using cooled antiproton beams with a high intensity and and momenta between 1.5 and 15 GeV/c.… ▽ More PANDA (anti-Proton ANnihiliation at DArmstadt) is planned to be one of the four main experiments at the future international accelerator complex FAIR (Facility for Antiproton and Ion Research) in Darmstadt, Germany. It is going to address fundamental questions of hadron physics and quantum chromodynamics using cooled antiproton beams with a high intensity and and momenta between 1.5 and 15 GeV/c. PANDA is designed to reach a maximum luminosity of 2x10^32 cm^2 s. Most of the physics programs require an excellent particle identification (PID). The PID of hadronic states at the forward endcap of the target spectrometer will be done by a fast and compact Cherenkov detector that uses the detection of internally reflected Cherenkov light (DIRC) principle. It is designed to cover the polar angle range from 5° to 22° and to provide a separation power for the separation of charged pions and kaons up to 3 standard deviations (s.d.) for particle momenta up to 4 GeV/c in order to cover the important particle phase space. This document describes the technical design and the expected performance of the novel PANDA Disc DIRC detector that has not been used in any other high energy physics experiment (HEP) before. The performance has been studied with Monte-Carlo simulations and various beam tests at DESY and CERN. The final design meets all PANDA requirements and guarantees suffcient safety margins. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Comments: TDR for Panda/Fair to be published

Influence of irradiation on defect spin coherence in silicon carbide

Authors: C. Kasper, D. Klenkert, Z. Shang, D. Simin, A. Sperlich, H. Kraus, C. Schneider, S. Zhou, M. Trupke, W. Kada, T. Ohshima, V. Dyakonov, G. V. Astakhov

Abstract: Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of… ▽ More Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of the most crucial parameters of any quantum system is how long its quantum coherence can be preserved. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spin-lattice relaxation time ($T_1$) and spin coherence time ($T_2$) of silicon vacancies in 4H-SiC created by neutron, electron and proton irradiation in a broad range of fluences. We also examine the effect of irradiation energy and sample annealing. We establish a robustness of the $T_1$ time against all types of irradiation and reveal a universal scaling of the $T_2$ time with the emitter density. Our results can be used to optimize the coherence properties of silicon vacancy qubits in SiC for specific tasks. △ Less

Submitted 19 August, 2019; originally announced August 2019.

Comments: 10 pages, 7 figures

Journal ref: Phys. Rev. Applied 13, 044054 (2020)

Optically detected spin-mechanical resonance in silicon carbide membranes

Authors: A. V. Poshakinskiy, G. V. Astakhov

Abstract: Hybrid spin-mechanical systems are a promising platform for future quantum technologies. Usually they require application of additional microwave fields to project integer spin to a readable state. We develop a theory of optically detected spin-mechanical resonance associated with half-integer spin defects in silicon carbide (SiC) membranes. It occurs when a spin resonance frequency matches a reso… ▽ More Hybrid spin-mechanical systems are a promising platform for future quantum technologies. Usually they require application of additional microwave fields to project integer spin to a readable state. We develop a theory of optically detected spin-mechanical resonance associated with half-integer spin defects in silicon carbide (SiC) membranes. It occurs when a spin resonance frequency matches a resonance frequency of a mechanical mode, resulting in a shortening of the spin relaxation time through resonantly enhanced spin-phonon coupling. The effect can be detected as an abrupt reduction of the photoluminescence intensity under optical pum** without application of microwave fields. We propose all-optical protocols based on such spin-mechanical resonance to detect external magnetic fields and mass with ultra-high sensitivity. We also discuss room-temperature nonlinear effects under strong optical pum**, including spin-mediated cooling and heating of mechanical modes. Our approach suggests a new concept for quantum sensing using spin-optomechanics. △ Less

Submitted 3 March, 2019; originally announced March 2019.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. B 100, 094104 (2019)

Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution

Authors: V. A. Soltamov, C. Kasper, A. V. Poshakinskiy, A. N. Anisimov, E. N. Mokhov, A. Sperlich, S. A. Tarasenko, P. G. Baranov, G. V. Astakhov, V. Dyakonov

Abstract: Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significant advantages. Particularly, they can provide noise-resistant quantum cryptography, simplify quantum logic and improve quantum metrology. Flying and s… ▽ More Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significant advantages. Particularly, they can provide noise-resistant quantum cryptography, simplify quantum logic and improve quantum metrology. Flying and solid-state qudits have been implemented on the basis of photonic chips and superconducting circuits, respectively. However, there is still a lack of room-temperature qudits with long coherence time and high spectral resolution. The silicon vacancy centers in silicon carbide (SiC) with spin S = 3/2 are quite promising in this respect, but until now they were treated as a canonical qubit system. Here, we apply a two-frequency protocol to excite and image multiple qudit modes in a SiC spin ensemble under ambient conditions. Strikingly, their spectral width is about one order of magnitude narrower than the inhomogeneous broadening of the corresponding spin resonance. By applying Ramsey interferometry to these spin qudits, we achieve a spectral selectivity of 600 kHz and a spectral resolution of 30 kHz. As a practical consequence, we demonstrate absolute DC magnetometry insensitive to thermal noise and strain fluctuations. △ Less

Submitted 26 July, 2018; originally announced July 2018.

Journal ref: Nat. Commun. 10, 1678 (2019)

Highly efficient optical pum** of spin defects in silicon carbide for stimulated microwave emission

Authors: M. Fischer, A. Sperlich, H. Kraus, T. Ohshima, G. V. Astakhov, V. Dyakonov

Abstract: We investigate the pump efficiency of silicon vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally… ▽ More We investigate the pump efficiency of silicon vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier. △ Less

Submitted 31 August, 2017; originally announced September 2017.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Applied 9, 054006 (2018)

Spin and optical properties of silicon vacancies in silicon carbide (a review)

Authors: S. A. Tarasenko, A. V. Poshakinskiy, D. Simin, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, V. Dyakonov, G. V. Astakhov

Abstract: We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The fine structure of the spin centers turns out to be highly sensitive to mechanical pressure, external magnetic and electric fields, temperature variation, etc., whi… ▽ More We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The fine structure of the spin centers turns out to be highly sensitive to mechanical pressure, external magnetic and electric fields, temperature variation, etc., which can be utilized for efficient room-temperature sensing, particularly by purely optical means or through the optically detected magnetic resonance. We discuss the experimental achievements in magnetometry and thermometry based on the spin state mixing at level anticrossings in an external magnetic field and the underlying microscopic mechanisms. We also discuss spin fluctuations in an ensemble of vacancies caused by interaction with environment. △ Less

Submitted 18 July, 2017; originally announced July 2017.

Comments: 10 pages, for a special issue of Physica Status Solidi B

Feasibility study for the measurement of $πN$ TDAs at PANDA in $\bar{p}p\to J/ψπ^0$

Authors: PANDA Collaboration, B. Singh, W. Erni, B. Krusche, M. Steinacher, N. Walford, H. Liu, Z. Liu, B. Liu, X. Shen, C. Wang, J. Zhao, M. Albrecht, T. Erlen, M. Fink, F. H. Heinsius, T. Held, T. Holtmann, S. Jasper, I. Keshk, H. Koch, B. Kopf, M. Kuhlmann, M. Kümmel, S. Leiber , et al. (488 additional authors not shown)

Abstract: The exclusive charmonium production process in $\bar{p}p$ annihilation with an associated $π^0$ meson $\bar{p}p\to J/ψπ^0$ is studied in the framework of QCD collinear factorization. The feasibility of measuring this reaction through the $J/ψ\to e^+e^-$ decay channel with the PANDA (AntiProton ANnihilation at DArmstadt) experiment is investigated. Simulations on signal reconstruction efficiency as… ▽ More The exclusive charmonium production process in $\bar{p}p$ annihilation with an associated $π^0$ meson $\bar{p}p\to J/ψπ^0$ is studied in the framework of QCD collinear factorization. The feasibility of measuring this reaction through the $J/ψ\to e^+e^-$ decay channel with the PANDA (AntiProton ANnihilation at DArmstadt) experiment is investigated. Simulations on signal reconstruction efficiency as well as the background rejection from various sources including the $\bar{p}p\toπ^+π^-π^0$ and $\bar{p}p\to J/ψπ^0π^0$ reactions are performed with PandaRoot, the simulation and analysis software framework of the PANDA experiment. It is shown that the measurement can be done at PANDA with significant constraining power under the assumption of an integrated luminosity attainable in four to five months of data taking at the maximum design luminosity. △ Less

Submitted 7 October, 2016; originally announced October 2016.

Comments: 25 pages, 22 figures

Journal ref: Phys. Rev. D 95, 032003 (2017)

Optical thermometry based on level anticrossing in silicon carbide

Authors: A. N. Anisimov, D. Simin, V. A. Soltamov, S. P. Lebedev, P. G. Baranov, G. V. Astakhov, V. Dyakonov

Abstract: We report a giant thermal shift of $2.1 \,$MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences c… ▽ More We report a giant thermal shift of $2.1 \,$MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of $100 \,$mK/Hz$^{1/2}$ for a detection volume of approximately $10^{-6} \,$mm$^{3}$. In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center. △ Less

Submitted 21 September, 2016; originally announced September 2016.

Comments: 4 pages, 3 figures

Journal ref: Sci. Rep. 6, 33301 (2016)

Feasibility studies of time-like proton electromagnetic form factors at PANDA at FAIR

Authors: PANDA Collaboration, B. Singh, W. Erni, B. Krusche, M. Steinacher, N. Walford, B. Liu, H. Liu, Z. Liu, X. Shen, C. Wang, J. Zhao, M. Albrecht, T. Erlen, M. Fink, F. Heinsius, T. Held, T. Holtmann, S. Jasper, I. Keshk, H. Koch, B. Kopf, M. Kuhlmann, M. Kümmel, S. Leiber , et al. (482 additional authors not shown)

Abstract: Simulation results for future measurements of electromagnetic proton form factors at \PANDA (FAIR) within the PandaRoot software framework are reported. The statistical precision with which the proton form factors can be determined is estimated. The signal channel $\bar p p \to e^+ e^-$ is studied on the basis of two different but consistent procedures. The suppression of the main background chann… ▽ More Simulation results for future measurements of electromagnetic proton form factors at \PANDA (FAIR) within the PandaRoot software framework are reported. The statistical precision with which the proton form factors can be determined is estimated. The signal channel $\bar p p \to e^+ e^-$ is studied on the basis of two different but consistent procedures. The suppression of the main background channel, $\textit{i.e.}$ $\bar p p \to π^+ π^-$, is studied. Furthermore, the background versus signal efficiency, statistical and systematical uncertainties on the extracted proton form factors are evaluated using two different procedures. The results are consistent with those of a previous simulation study using an older, simplified framework. However, a slightly better precision is achieved in the PandaRoot study in a large range of momentum transfer, assuming the nominal beam conditions and detector performance. △ Less

Submitted 29 September, 2016; v1 submitted 3 June, 2016; originally announced June 2016.

Observation of the universal magnetoelectric effect in a 3D topological insulator

Authors: V. Dziom, A. Shuvaev, A. Pimenov, G. V. Astakhov, C. Ames, K. Bendias, J. Böttcher, G. Tkachov, E. M. Hankiewicz, C. Brüne, H Buhmann, L. W. Molenkamp

Abstract: The electrodynamics of topological insulators (TIs) is described by modified Maxwell's equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such that the coupling coefficient is quantized in odd multiples of $e^2 / 2 h c $ per surface. Here, we report on the observation of this so-called topological magneto… ▽ More The electrodynamics of topological insulators (TIs) is described by modified Maxwell's equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such that the coupling coefficient is quantized in odd multiples of $e^2 / 2 h c $ per surface. Here, we report on the observation of this so-called topological magnetoelectric (TME) effect. We use monochromatic terahertz (THz) spectroscopy of TI structures equipped with a semi-transparent gate to selectively address surface states. In high external magnetic fields, we observe a universal Faraday rotation angle equal to the fine structure constant $α= e^2 / \hbar c$ when a linearly polarized THz radiation of a certain frequency passes through the two surfaces of a strained HgTe 3D TI. These experiments give insight into axion electrodynamics of TIs and may potentially be used for a metrological definition of the three basic physical constants. △ Less

Submitted 17 March, 2016; originally announced March 2016.

Comments: Submitted 13 March, 2016; 7 pages, 4 figures

Journal ref: Nat. Commun. 8, 15197 (2017)

Locking of electron spin coherence over fifty milliseconds in natural silicon carbide

Authors: D. Simin, H. Kraus, A. Sperlich, T. Ohshima, G. V. Astakhov, V. Dyakonov

Abstract: We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1 seconds. The spin-locked subspace with drastically reduced decoherence rate is attained through the suppression of heteronuclear spin cross-talking by applying a moderate magnetic field in combination with dynamic decou… ▽ More We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1 seconds. The spin-locked subspace with drastically reduced decoherence rate is attained through the suppression of heteronuclear spin cross-talking by applying a moderate magnetic field in combination with dynamic decoupling from the nuclear spin baths. We identify several phonon-assisted mechanisms of spin-lattice relaxation, ultimately limiting quantum coherence, and find that it can be extremely long at cryogenic temperature, equal or even longer than 8 seconds. Our approach may be extended to other polyatomic compounds and open a path towards improved qubit memory for wafer-scale quantum techmologies. △ Less

Submitted 10 November, 2016; v1 submitted 18 February, 2016; originally announced February 2016.

Comments: Added extended data analysis based on quantum process tomography, discussion of spin-lattice relaxation mechanisms

Journal ref: Phys. Rev. B 95, 161201 (2017)

All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide

Authors: D. Simin, V. A. Soltamov, A. V. Poshakinskiy, A. N. Anisimov, R. A. Babunts, D. O. Tolmachev, E. N. Mokhov, M. Trupke, S. A. Tarasenko, A. Sperlich, P. G. Baranov, V. Dyakonov, G. V. Astakhov

Abstract: We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp… ▽ More We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity of 87 nT Hz$^{-1/2}$ within a volume of $3 \times 10^{-7}$ mm$^{3}$ at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radiofrequency fields, it is scalable to much larger volumes. For an optimized light-trap** waveguide of 3 mm$^{3}$ the projection noise limit is below 100 fT Hz$^{-1/2}$. △ Less

Submitted 28 May, 2016; v1 submitted 15 November, 2015; originally announced November 2015.

Comments: 12 pages, 6 figures; additional experimental data and an extended theoretical analysis are added in the second version

Journal ref: Phys. Rev. X 6, 031014 (2016)

High precision vector magnetometry with uniaxial quantum centers in silicon carbide

Authors: D. Simin, F. Fuchs, H. Kraus, A. Sperlich, P. G. Baranov, G. V. Astakhov, V. Dyakonov

Abstract: We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state. We achieve a perfect agre… ▽ More We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state. We achieve a perfect agreement between the experimental and calculated spin resonance spectra without any fitting parameters, providing angle resolution of a few degrees in the magnetic field range up to several millitesla. Our approach is suitable for ensembles as well as for single spin-3/2 color centers, allowing for vector magnetometry on the nanoscale at ambient conditions. △ Less

Submitted 1 May, 2015; originally announced May 2015.

Journal ref: Phys. Rev. Appl. 4, 014009 (2015)

Experimental access to Transition Distribution Amplitudes with the PANDA experiment at FAIR

Authors: PANDA Collaboration, B. P. Singh, W. Erni, I. Keshelashvili, B. Krusche, M. Steinacher %, B. Liu, H. Liu, Z. Liu, X. Shen, C. Wang, J. Zhao %, M. Albrecht, M. Fink, F. H. Heinsius, T. Held, T. Holtmann, H. Koch, B. Kopf, M. Kümmel, G. Kuhl, M. Kuhlmann, M. Leyhe, M. Mikirtychyants, P. Musiol , et al. (511 additional authors not shown)

Abstract: Baryon-to-meson Transition Distribution Amplitudes (TDAs) encoding valuable new information on hadron structure appear as building blocks in the collinear factorized description for several types of hard exclusive reactions. In this paper, we address the possibility of accessing nucleon-to-pion ($πN$) TDAs from $\bar{p}p \to e^+e^- π^0$ reaction with the future PANDA detector at the FAIR facility.… ▽ More Baryon-to-meson Transition Distribution Amplitudes (TDAs) encoding valuable new information on hadron structure appear as building blocks in the collinear factorized description for several types of hard exclusive reactions. In this paper, we address the possibility of accessing nucleon-to-pion ($πN$) TDAs from $\bar{p}p \to e^+e^- π^0$ reaction with the future PANDA detector at the FAIR facility. At high center of mass energy and high invariant mass squared of the lepton pair $q^2$, the amplitude of the signal channel $\bar{p}p \to e^+e^- π^0$ admits a QCD factorized description in terms of $πN$ TDAs and nucleon Distribution Amplitudes (DAs) in the forward and backward kinematic regimes. Assuming the validity of this factorized description, we perform feasibility studies for measuring $\bar{p}p \to e^+e^- π^0$ with the PANDA detector. Detailed simulations on signal reconstruction efficiency as well as on rejection of the most severe background channel, i.e. $\bar{p}p \to π^+π^- π^0$ were performed for the center of mass energy squared $s = 5$ GeV$^2$ and $s = 10$ GeV$^2$, in the kinematic regions $3.0 < q^2 < 4.3$ GeV$^2$ and $5 < q^2 < 9$ GeV$^2$, respectively, with a neutral pion scattered in the forward or backward cone $| \cosθ_{π^0}| > 0.5 $ in the proton-antiproton center of mass frame. Results of the simulation show that the particle identification capabilities of the PANDA detector will allow to achieve a background rejection factor of $5\cdot 10^7$ ($1\cdot 10^7$) at low (high) $q^2$ for $s=5$ GeV$^2$, and of $1\cdot 10^8$ ($6\cdot 10^6$) at low (high) $q^2$ for $s=10$ GeV$^2$, while kee** the signal reconstruction efficiency at around $40\%$. At both energies, a clean lepton signal can be reconstructed with the expected statistics corresponding to $2$ fb$^{-1}$ of integrated luminosity. (.../...) △ Less

Submitted 30 November, 2016; v1 submitted 2 September, 2014; originally announced September 2014.

Comments: 19 pages, 7 figures (some multiple), 2 tables (each double), preprint of an article for epj - v2

Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

Authors: A. Muzha, F. Fuchs, N. V. Tarakina, D. Simin, M. Trupke, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, V. Dyakonov, A. Krueger, G. V. Astakhov

Abstract: Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600 nm down to 60 nm in… ▽ More Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600 nm down to 60 nm in size. The structural analysis reveals further fragmentation of the smallest nanocrystals into ca. 10-nm-size clusters of high crystalline quality, separated by amorphization areas. We use neutron irradiation to create silicon vacancies, demonstrating near infrared photoluminescence. Finally, we detect, for the first time, room-temperature spin resonances of these silicon vacancies hosted in SiC nanocrystals. This opens intriguing perspectives to use them not only as in-vivo luminescent markers, but also as magnetic field and temperature sensors, allowing for monitoring various physical, chemical and biological processes. △ Less

Submitted 2 September, 2014; originally announced September 2014.

Comments: 5 pages, 4 figures

Engineering near infrared single photon emitters in ultrapure silicon carbide

Authors: F. Fuchs, B. Stender, M. Trupke, J. Pflaum, V. Dyakonov, G. V. Astakhov

Abstract: Quantum emitters hosted in crystalline lattices are highly attractive candidates for quantum information processing, secure networks and nanosensing. For many of these applications it is necessary to have control over single emitters with long spin coherence times. Such single quantum systems have been realized using quantum dots, colour centres in diamond, dopants in nanostructures and molecules… ▽ More Quantum emitters hosted in crystalline lattices are highly attractive candidates for quantum information processing, secure networks and nanosensing. For many of these applications it is necessary to have control over single emitters with long spin coherence times. Such single quantum systems have been realized using quantum dots, colour centres in diamond, dopants in nanostructures and molecules . More recently, ensemble emitters with spin dephasing times on the order of microseconds and room-temperature optically detectable magnetic resonance have been identified in silicon carbide (SiC), a compound being highly compatible to up-to-date semiconductor device technology. So far however, the engineering of such spin centres in SiC on single-emitter level has remained elusive. Here, we demonstrate the control of spin centre density in ultrapure SiC over 8 orders of magnitude, from below $10^{9}$ to above $10^{16} \,$cm$^{-3}$ using neutron irradiation. For a low irradiation dose, a fully photostable, room-temperature, near infrared (NIR) single photon emitter can clearly be isolated, demonstrating no bleaching even after $10^{14}$ excitation cycles. Based on their spectroscopic fingerprints, these centres are identified as silicon vacancies, which can potentially be used as qubits, spin sensors and maser amplifiers. △ Less

Submitted 25 July, 2014; originally announced July 2014.

Comments: 5 pages, 4 figures

Journal ref: Nat. Comm. 6, 7578 (2015)

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Authors: H. Kraus, V. A. Soltamov, F. Fuchs, D. Simin, A. Sperlich, P. G. Baranov, G. V. Astakhov, V. Dyakonov

Abstract: Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2… ▽ More Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of -1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response. △ Less

Submitted 30 March, 2014; originally announced March 2014.

Comments: 8 pages, 7 figures

Journal ref: Sci. Rep. 4, 5303 (2014)

Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide

Authors: T. C. Hain, F. Fuchs, V. A. Soltamov, P. G. Baranov, G. V. Astakhov, T. Hertel, V. Dyakonov

Abstract: We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We establish the excitation profile for optical pum** of these defects and evaluate the optimum excitation wavelength of 770 nm. We also measure the photoluminesc… ▽ More We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We establish the excitation profile for optical pum** of these defects and evaluate the optimum excitation wavelength of 770 nm. We also measure the photoluminescence dynamics at room temperature and find a monoexponential decay with a characteristic lifetime of 6.1 ns. The integrated photoluminescence intensity depends linear on the excitation power density up to 20 kW/cm$^2$, indicating a relatively small absorption cross section of these defects. △ Less

Submitted 1 April, 2014; v1 submitted 10 March, 2014; originally announced March 2014.

Comments: 4 pages, 4 figures

Journal ref: J. Appl. Phys. 115, 133508 (2014)

Point defects in SiC as a promising basis for single-defect, single-photon spectroscopy with room temperature controllable quantum states

Authors: Pavel G. Baranov, Victor A. Soltamov, Alexandra A. Soltamova, Georgy V. Astakhov, Vladimir V. Dyakonov

Abstract: The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can extend the functionality of such systems not available to the diamond. Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) investigations presented here suggest that silicon vacancy (VSi) r… ▽ More The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can extend the functionality of such systems not available to the diamond. Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) investigations presented here suggest that silicon vacancy (VSi) related point defects in SiC possess properties the similar to those of the NV center in diamond, which in turn make them a promising quantum system for single-defect and single-photon spectroscopy in the infrared region. Depending on the defect type, temperature, SiC polytype, and crystalline position, two opposite schemes have been observed for the optical alignment of the ground state spin sublevels population of the VSi-related defects upon irradiation with unpolarized light. Spin ensemble of VSi-related defects are shown to be prepared in a coherent superposition of the spin states even at room temperature. Zero-field ODMR shows the possibility to manipulate of the ground state spin population by applying radiofrequency field. These altogether make VSi-related defects in SiC very favorable candidate for spintronics, quantum information processing, and magnetometry. △ Less

Submitted 9 January, 2013; originally announced January 2013.

Comments: accepted for Materials Science Forum (2013)

Journal ref: Materials Science Forum 740-742, 425 (2013)

Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared

Authors: F. Fuchs, V. A. Soltamov, S. Vaeth, P. G. Baranov, E. N. Mokhov, G. V. Astakhov, V. Dyakonov

Abstract: Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a s… ▽ More Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in visible and near infrared (NIR), associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing. △ Less

Submitted 12 December, 2012; originally announced December 2012.

Journal ref: Sci. Rep. 3, 1637 (2013)

Room temperature electrically tunable broadband terahertz Faraday effect

Authors: Alexey Shuvaev, Andrei Pimenov, Georgy V. Astakhov, Mathias Mühlbauer, Christoph Brüne, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: The terahertz (THz) frequency range (0.1-10 THz) fills the gap between the microwave and optical parts of the electromagnetic spectrum. Recent progress in the generation and detection of the THz radiation has made it a powerful tool for fundamental research and resulted in a number of applications. However, some important components necessary to effectively manipulate THz radiation are still missi… ▽ More The terahertz (THz) frequency range (0.1-10 THz) fills the gap between the microwave and optical parts of the electromagnetic spectrum. Recent progress in the generation and detection of the THz radiation has made it a powerful tool for fundamental research and resulted in a number of applications. However, some important components necessary to effectively manipulate THz radiation are still missing. In particular, active polarization and phase control over a broad THz band would have major applications in science and technology. It would, e.g., enable high-speed modulation for wireless communications and real-time chiral structure spectroscopy of proteins and DNA. In physics, this technology can be also used to precisely measure very weak Faraday and Kerr effects, as required, for instance, to probe the electrodynamics of topological insulators. Phase control of THz radiation has been demonstrated using various approaches. They depend either on the physical dimensions of the phase plate (and hence provide a fixed phase shift) or on a mechanically controlled time delay between optical pulses (and hence prevent fast modulation). Here, we present data that demonstrate the room temperature giant Faraday effect in HgTe can be electrically tuned over a wide frequency range (0.1-1 THz). The principle of operation is based on the field effect in a thin HgTe semimetal film. These findings together with the low scattering rate in HgTe open a new approach for high-speed amplitude and phase modulation in the THz frequency range. △ Less

Submitted 23 November, 2012; originally announced November 2012.

Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide

Authors: D. Riedel, F. Fuchs, H. Kraus, S. Vaeth, A. Sperlich, V. Dyakonov, A. A. Soltamova, P. G. Baranov, V. A. Ilyin, G. V. Astakhov

Abstract: Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quan… ▽ More Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications. △ Less

Submitted 1 October, 2012; originally announced October 2012.

Journal ref: Phys. Rev. Lett. 109, 226402 (2012)

Terahertz Quantum Hall Effect in a Topological Insulator

Authors: A. M. Shuvaev, G. V. Astakhov, G. Tkachov, C. Brüne, H. Buhmann, L. W. Molenkamp, A. Pimenov

Abstract: Using THz spectroscopy in external magnetic fields we investigate the low-temperature charge dynamics of strained HgTe, a three dimensional topological insulator. From the Faraday rotation angle and ellipticity a complete characterization of the charge carriers is obtained, including the 2D density, the scattering rate and the Fermi velocity. The obtained value of the Fermi velocity provides furth… ▽ More Using THz spectroscopy in external magnetic fields we investigate the low-temperature charge dynamics of strained HgTe, a three dimensional topological insulator. From the Faraday rotation angle and ellipticity a complete characterization of the charge carriers is obtained, including the 2D density, the scattering rate and the Fermi velocity. The obtained value of the Fermi velocity provides further evidence for the Dirac character of the carriers in the sample. In resonator experiments, we observe quantum Hall oscillations at THz frequencies. The 2D density estimated from the period of these oscillations agrees well with direct transport experiments on the topological surface state. Our findings open new avenues for the studies of the finite-frequency quantum Hall effect in topological insulators. △ Less

Submitted 6 August, 2012; originally announced August 2012.

Comments: 5 pages, 3 figures

Technical Design Report for the: PANDA Micro Vertex Detector

Authors: PANDA Collaboration, W. Erni, I. Keshelashvili, B. Krusche, M. Steinacher, Y. Heng, Z. Liu, H. Liu, X. Shen, Q. Wang, H. Xu, M. Albrecht, J. Becker, K. Eickel, F. Feldbauer, M. Fink, P. Friedel, F. H. Heinsius, T. Held, H. Koch, B. Kopf, M. Leyhe, C. Motzko, M. Pelizäus, J. Pychy , et al. (436 additional authors not shown)

Abstract: This document illustrates the technical layout and the expected performance of the Micro Vertex Detector (MVD) of the PANDA experiment. The MVD will detect charged particles as close as possible to the interaction zone. Design criteria and the optimisation process as well as the technical solutions chosen are discussed and the results of this process are subjected to extensive Monte Carlo physics… ▽ More This document illustrates the technical layout and the expected performance of the Micro Vertex Detector (MVD) of the PANDA experiment. The MVD will detect charged particles as close as possible to the interaction zone. Design criteria and the optimisation process as well as the technical solutions chosen are discussed and the results of this process are subjected to extensive Monte Carlo physics studies. The route towards realisation of the detector is outlined. △ Less

Submitted 10 August, 2012; v1 submitted 27 July, 2012; originally announced July 2012.

Comments: 189 pages, 225 figures, 41 tables

Technical Design Report for the: PANDA Straw Tube Tracker

Authors: PANDA Collaboration, W. Erni, I. Keshelashvili, B. Krusche, M. Steinacher, Y. Heng, Z. Liu, H. Liu, X. Shen, Q. Wang, H. Xu, A. Aab, M. Albrecht, J. Becker, A. Csapó, F. Feldbauer, M. Fink, P. Friedel, F. H. Heinsius, T. Held, L. Klask, H. Koch, B. Kopf, S. Leiber, M. Leyhe , et al. (451 additional authors not shown)

Abstract: This document describes the technical layout and the expected performance of the Straw Tube Tracker (STT), the main tracking detector of the PANDA target spectrometer. The STT encloses a Micro-Vertex-Detector (MVD) for the inner tracking and is followed in beam direction by a set of GEM-stations. The tasks of the STT are the measurement of the particle momentum from the reconstructed trajectory an… ▽ More This document describes the technical layout and the expected performance of the Straw Tube Tracker (STT), the main tracking detector of the PANDA target spectrometer. The STT encloses a Micro-Vertex-Detector (MVD) for the inner tracking and is followed in beam direction by a set of GEM-stations. The tasks of the STT are the measurement of the particle momentum from the reconstructed trajectory and the measurement of the specific energy-loss for a particle identification. Dedicated simulations with full analysis studies of certain proton-antiproton reactions, identified as being benchmark tests for the whole PANDA scientific program, have been performed to test the STT layout and performance. The results are presented, and the time lines to construct the STT are described. △ Less

Submitted 4 June, 2012; v1 submitted 24 May, 2012; originally announced May 2012.

Comments: accepted for publication on EPJA

Journal ref: Eur. Phys. J. A (2013) 49: 25